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La ricerca find articoli where soggetti phrase all words 'SAPPHIRE SUBSTRATE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 65 riferimenti
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    1. Vendik, I; Deleniv, A; Svishchev, A; Goubina, M; Lapshin, A; Zaitsev, A; Schneider, R; Geerk, J; Aidam, R
      Narrow-band 10-pole Y-Ba-Cu-O filter on sapphire substrate

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    2. Lim, HR; Kim, IS; Park, YK; Kim, DH
      Noise properties of YBa2Cu3O7-x step-edge junction dc SQUID magnetometers prepared on sapphire substrates

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    3. Lee, DS; Rue, GH; Huh, JS; Choi, SD; Lee, DD
      Sensing characteristics of epitaxially-grown tin oxide gas sensor on sapphire substrate

      SENSORS AND ACTUATORS B-CHEMICAL
    4. Bernhardt, G; Silvestre, C; LeCursi, N; Moulzolf, SC; Frankel, DJ; Lad, RJ
      Performance of Zr and Ti adhesion layers for bonding of platinum metallization to sapphire substrates

      SENSORS AND ACTUATORS B-CHEMICAL
    5. Wakana, H; Michikami, O
      High-quality a-axis oriented EuBa2Cu3O7-delta films on sapphire substrates

      PHYSICA C
    6. Vendik, I; Vendik, O; Deleniv, A; Gashinova, M; Lapshin, A; Kholodniak, D
      Design of trimmingless narrowband planar HTS filters

      JOURNAL OF SUPERCONDUCTIVITY
    7. Singh, A; Bose, S; Gupta, M; Gupta, RS
      Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    8. Emanetoglu, NW; Patounakis, G; Liang, SH; Gorla, CR; Wittstruck, R; Lu, YC
      Analysis of SAW properties of epitaxial ZnO films grown on R-Al2O3 substrates

      IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
    9. Kang, HC; Seo, SH; Noh, DY
      X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth

      JOURNAL OF MATERIALS RESEARCH
    10. Cho, HK; Lee, JY; Kim, KS; Yang, GM
      Growth of a GaN overlayer with low threading dislocation density using stacking faults

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    11. Godlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM
      Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer

      APPLIED SURFACE SCIENCE
    12. Bose, S; Adarsh; Kumar, A; Simrata; Gupta, M; Gupta, RS
      A complete analytical model of GaN MESFET for microwave frequency applications

      MICROELECTRONICS JOURNAL
    13. Kong, MY; Zhang, JP; Wang, XL; Sun, DZ
      Hydrogen behavior in GaN epilayers grown by NH3-MBE

      JOURNAL OF CRYSTAL GROWTH
    14. Cho, HK; Lee, JY; Choi, SC; Yang, GM
      Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density

      JOURNAL OF CRYSTAL GROWTH
    15. Cho, HK; Lee, JY; Kim, KS; Yang, GM; Song, JH; Yu, PW
      Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition

      JOURNAL OF APPLIED PHYSICS
    16. Browning, J; Newman, N; Ghetzler, R; Mast, M; Swendson, B
      Adhesive strength of rubber bonded to Al2O3 surfaces: The role of chemistry and morphology

      JOURNAL OF ADHESION
    17. Ohno, Y; Kuzuhara, M
      Application of GaN-based heterojunction FETs for advanced wireless communication

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    18. Deleniv, A; Kholodniak, D; Lapshin, A; Vendik, I; Yudin, P; Min, BC; Choi, YH; Oh, B
      Extracting the model parameters of high-temperature superconductor film microwave surface impedance from the experimental characteristics of resonators and filters

      SUPERCONDUCTOR SCIENCE & TECHNOLOGY
    19. Mu, HC; Ren, CX; Jiang, BY; Yu, YH; Luo, EZ; Wilson, ZH
      Low energy ion beam assisted deposition of biaxially aligned YSZ and CeO2/YSZ films on r-plane sapphire

      SURFACE & COATINGS TECHNOLOGY
    20. Sugianto; Sani, RA; Arifin, P; Budiman, M; Barmawi, M
      Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD

      JOURNAL OF CRYSTAL GROWTH
    21. Wuu, DS; Horng, RH; Tseng, WH; Lin, WT; Kung, CY
      Influences of temperature ramping rate on GaN buffer layers and subsequentGaN overlayers grown by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    22. Majima, T; Yamamoto, H; Kulinich, SA; Terashima, K
      High-rate deposition of LiNb1-xTaxO3 films by thermal plasma spray CVD

      JOURNAL OF CRYSTAL GROWTH
    23. Liu, ZJ; Atakan, B; Kohse-Hoinghaus, K
      Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor

      JOURNAL OF CRYSTAL GROWTH
    24. Sakurai, K; Kanehiro, M; Nakahara, K; Tanabe, T; Fujita, S; Fujita, S
      Effects of substrate offset angles on MBE growth of ZnO

      JOURNAL OF CRYSTAL GROWTH
    25. Peters, S; Schmidtling, T; Trepk, T; Pohl, UW; Zettler, JT; Richter, W
      In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry

      JOURNAL OF APPLIED PHYSICS
    26. Vendik, IB; Vendik, OG; Deleniv, AN; Kondratiev, VV; Goubina, MN; Kholodniak, DV
      Development of CAD tool for a design of microwave planar HTS filters

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    27. Emanetoglu, NW; Gorla, C; Liu, Y; Liang, S; Lu, Y
      Epitaxial ZnO piezoelectric thin films for saw filters

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    28. Egawa, T; Ishikawa, H; Jimbo, T; Umeno, M
      Heteroepitaxial growth of III-V compound semiconductors for optoelectronicdevices

      BULLETIN OF MATERIALS SCIENCE
    29. Li, SY; Zhu, J
      Al diffusion in GaN buffer layer during the growth of GaN film

      JOURNAL OF CRYSTAL GROWTH
    30. King, SW; Carlson, EP; Therrien, RJ; Christman, JA; Nemanich, RJ; Davis, RF
      X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

      JOURNAL OF APPLIED PHYSICS
    31. Kim, IS; Lim, HR; Kim, DH; Park, YK
      Surface morphology and critical current density of high quality YB2Cu3O7 thin films on sapphire substrates

      IEEE TRANSACTIONS ON MAGNETICS
    32. Kim, JH; Choi, SC; Choi, JY; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Lee, HJ
      Effects of initial thermal cleaning treatment of a sapphire substrate surface on the GaN epilayer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    33. Wakana, H; Yokosawa, A; Michikami, O
      Non-c-asis-oriented EuBa2Cu3O7-delta thin films grown on Al2O3(1102) substrates with CeO2 buffer layers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. Kim, IS; Lim, HR; Kim, DH; Park, YK
      Fabrication of YBa2Cu3O7 step-edge junctions on sapphire substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    35. DELENIV A; GUBINA M; KHOLODNIAK D; VENDIK I
      MODEL OF HIGH-TEMPERATURE SUPERCONDUCTING COUPLED MICROSTRIP LINES ONANISOTROPIC SAPPHIRE SUBSTRATE

      INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
    36. DRYBURGH PM
      THE SELECTION OF SUBSTRATES FOR THE HETEROEPITAXY OF HIGH-GAP SEMICONDUCTORS

      Journal of materials science. Materials in electronics
    37. NAKAO S; IKEYAMA M; TAZAWA M; JIN P; NIWA H; TANEMURA S; MIYAGAWA Y; MIYAGAWA S; SAITOH K
      HIGH-ENERGY COIMPLANTATION OF TI AND O IONS INTO SAPPHIRE

      Materials chemistry and physics
    38. Doverspike, K; Pankove, JI
      Doping in the III-nitrides

      GALLIUM NITRIDE (GAN) I
    39. YAMAGUCHI N; HATTORI T; TERASHIMA K; YOSHIDA T
      HIGH-RATE DEPOSITION OF LINBO3 FILMS BY THERMAL PLASMA SPRAY CVD

      Thin solid films
    40. Ikuta, K; Inoue, Y; Takai, O
      Optical and electrical properties of InN thin films grown on ZnO/alpha-Al2O3 by RF reactive magnetron sputtering

      THIN SOLID FILMS
    41. JEON GN; KANG HS; CHAE KW; JUNG WK; YANG DI; LEE CH
      EFFECT OF INITIAL LAYERS FOR HIGH-QUALITY GAN GROWTH BY HOT-WALL EPITAXY

      Journal of crystal growth
    42. NISHIDE S; YOSHIMURA T; TAKAMATSU Y; ICHIGE A; PAK K; OHSHIMA N; YONEZU H
      STUDY OF THE PYROLYSIS OF TERTIARYBUTYLHYDRAZINE AND GAN FILM GROWTH

      Journal of crystal growth
    43. YEADON M; MARSHALL MT; HAMDANI F; PEKIN S; MORKOC H; GIBSON JM
      IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OF ALN GROWTH BY NITRIDATIONOF (0001)ALPHA-AL2O3

      Journal of applied physics
    44. IWATA K; ASAHI H; ASAMI K; KUROIWA R; GONDA S
      GAN-RICH SIDE OF GANAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    45. KIM W; YEADON M; BOTCHKAREV AE; MOHAMMAD SN; GIBSON JM; MORKOC H
      SURFACE-ROUGHNESS OF NITRIDED (0001)AL2O3 AND ALN EPILAYERS GROWN ON (0001)AL2O3 BY REACTIVE MOLECULAR-BEAM EPITAXY

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    46. LEVAILLANT YM; BISARO R; OLIVIER J; DURAND O; DUBOZ JY; RUFFENACHCLUR S; BRIOT O; GIL B; AULOMBARD RL
      CHARACTERIZATION OF AIN BUFFER LAYERS ON (0001)-SAPPHIRE SUBSTRATES

      Materials science & engineering. B, Solid-state materials for advanced technology
    47. XIAO RF; SUN XW; LI ZF; CUE N; KWOK HS; LIU QZ; LAU SS
      GROWTH OF GALLIUM NITRIDE THIN-FILMS BY LIQUID-TARGET PULSED-LASER DEPOSITION

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    48. MORKOC H
      DOPANT INCORPORATION AND DEFECTS IN III-V NITRIDES AND RELATED SEMICONDUCTORS AND THEIR APPLICATIONS

      Journal of the Korean Physical Society
    49. KOBAYASHI JT; KOBAYASHI NP; DAPKUS PD
      NUCLEATION AND GROWTH-BEHAVIOR FOR GAN GROWN ON (0001)SAPPHIRE VIA MULTISTEP GROWTH APPROACH

      Journal of electronic materials
    50. Akasaki, I; Amano, H
      Organometallic vapor-phase epitaxy of gallium nitride for high-brightness blue light-emitting diodes

      HIGH BRIGHTNESS LIGHT EMITTING DIODES
    51. AKASAKI I; AMANO H
      PROGRESS AND PROSPECT OF GROUP-III NITRIDE SEMICONDUCTORS

      Journal of crystal growth
    52. KOBAYASHI Y; TANAKA N; BABA Y; OKANO H; USUKI T; SHIBATA K; SHIMIZU Y
      GHZ-BAND SURFACE-ACOUSTIC-WAVE DEVICES USING THE 2ND LEAKY MODE ON LITAO3 AND LINBO3

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    53. AKASAKI I; AMANO H
      CRYSTAL-GROWTH AND CONDUCTIVITY CONTROL OF GROUP-III NITRIDE SEMICONDUCTORS AND THEIR APPLICATION TO SHORT-WAVELENGTH LIGHT EMITTERS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. MICHIKAMI O; YOKOSAWA A; WAKANA H; KASHIWABA Y
      EUBA2CU3O7-DELTA THIN-FILMS GROWN ON SAPPHIRES WITH EPITAXIAL CEO2 BUFFER LAYERS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    55. KIM YJ; KIM KW
      CHARACTERISTICS OF EPITAXIAL ZNO FILMS ON SAPPHIRE SUBSTRATES DEPOSITED USING RF-MAGNETRON SPUTTERING

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    56. EBIHARA E; KOSHIHARA S; YOSHIMOTO M; MAEDA T; OHNISHI T; KOINUMA H; FUJIKI M
      DIRECT OBSERVATION OF HELICAL POLYSILANE NANOSTRUCTURES BY ATOMIC-FORCE MICROSCOPY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    57. TAKAHASHI N; MATSUMOTO R; KOUKITU A; SEKI H
      GROWTH OF INN AT HIGH-TEMPERATURE BY HALIDE VAPOR-PHASE EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    58. TAKAHASHI N; MATSUMOTO R; KOUKITU A; SEKI H
      VAPOR-PHASE EPITAXY OF INXGA1-XN USING INCL3, GACL3 AND NH3 SOURCES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    59. LEE SY; PARK HH
      EFFECT OF PRBA2CU3O7-X BUFFER LAYER THICKNESS ON THE PROPERTIES OF YBA2CU3O7-X THIN-FILMS GROWN ON SAPPHIRE BY LASER-ABLATION

      Journal of superconductivity
    60. LIN RJ; CHEN LJ; LIN LJ; YU YC; WANG CW; LIN EK
      GROWTH AND CHARACTERIZATION OF CEO2 FILMS ON SAPPHIRE SUBSTRATES BY SPUTTERING PROCESS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    61. KELLER S; KAPOLNEK D; KELLER BP; WU YF; HEYING B; SPECK JS; MISHRA UK; DENBAARS SP
      EFFECT OF THE TRIMETHYLGALLIUM FLOW DURING NUCLEATION LAYER GROWTH ONTHE PROPERTIES OF GAN GROWN ON SAPPHIRE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    62. IWATA K; ASAHI H; ASAMI K; GONDA S
      GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN1-XPX (X-LESS-THAN-OR-EQUAL-TO-0.015) USING ION-REMOVED ELECTRON-CYCLOTRON-RESONANCE RADICAL CELL

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    63. LEBEDEV AO; PICHUGIN IG; DOLOTOV NI
      GROWTH-MECHANISM AND STRUCTURAL-PROPERTIES OF EPITAXIAL GALLIUM NITRIDE LAYERS PRODUCED BY THE CHLORIDE-HYDRIDE METHOD

      Russian journal of applied chemistry
    64. AKASAKI I; AMANO H
      CRYSTAL-GROWTH OF COLUMN-III NITRIDES AND THEIR APPLICATIONS TO SHORT-WAVELENGTH LIGHT EMITTERS

      Journal of crystal growth
    65. TIAN YJ; XU SF; LU HB; CHEN ZH; CUI DF; ZHOU YL; ZHANG YZ; LI L; YANG GZ
      PREPARATION AND PROPERTIES OF YBA2CU3O7 THIN-FILMS ON SAPPHIRE WITH YTTRIA-STABILIZED ZIRCONIA BUFFER LAYER

      Journal of superconductivity


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/10/20 alle ore 03:36:43