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La ricerca find articoli where soggetti phrase all words 'POLY-SI TFTS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 45 riferimenti
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    1. Sameshima, T; Kaneko, Y; Andoh, N
      Rapid crystallization of silicon films using Joule heating of metal films

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    2. Kim, CH; Jung, SH; Yoo, JS; Han, MK
      Poly-Si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping

      IEEE ELECTRON DEVICE LETTERS
    3. Chang, KM; Chung, YH; Lin, GM; Deng, CG; Lin, JH
      Enhanced degradation in polycrystalline silicon thin-film transistors under dynamic hot-carrier stress

      IEEE ELECTRON DEVICE LETTERS
    4. Yaung, DN; Fang, YK; Chen, CH; Hung, CC; Tsao, FC; Wuu, SG; Liang, MS
      To suppress photoexcited current of hydrogenated polysilicon TFTs with lowtemperature oxidation of polychannel

      IEEE ELECTRON DEVICE LETTERS
    5. Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
      A novel thin-film transistor with self-aligned field induced drain

      IEEE ELECTRON DEVICE LETTERS
    6. Christiansen, S; Lengsfeld, P; Krinke, J; Nerding, M; Nickel, NH; Strunk, HP
      Nature of grain boundaries in laser crystallized polycrystalline silicon thin films

      JOURNAL OF APPLIED PHYSICS
    7. Sameshima, T; Andoh, N; Takahashi, H
      Rapid crystallization of silicon films using electrical-current-induced joule heating

      JOURNAL OF APPLIED PHYSICS
    8. Sameshima, T; Ozaki, K; Andoh, N
      Large crystalline grain growth using current-induced Joule heating

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    9. Kim, TK; Kim, GB; Lee, BI; Joo, SK
      The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization

      IEEE ELECTRON DEVICE LETTERS
    10. Park, KC; Choi, KY; Yoo, JS; Han, MK
      A new poly-Si thin-film transistor with poly-Si/a-Si double active layer

      IEEE ELECTRON DEVICE LETTERS
    11. Dassow, R; Kohler, JR; Helen, Y; Mourgues, K; Bonnaud, O; Mohammed-Brahim, T; Werner, JH
      Laser crystallization of silicon for high-performance thin-film transistors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    12. Giust, GK; Sigmon, TW
      Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    13. Sameshima, T; Ozaki, K
      Current-induced joule heating used to crystallize silicon thin films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    14. Cheng, HC; Huang, CY; Wang, FS; Lin, KH; Tarntair, FG
      Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    15. Brotherton, SD; Ayres, JR; Edwards, MJ; Fisher, CA; Glaister, C; Gowers, JP; McCulloch, DJ; Trainor, M
      Laser crystallised poly-Si TFTs for AMLCDs

      THIN SOLID FILMS
    16. Miyasaka, M; Stoemenos, J
      Excimer laser annealing of amorphous and solid-phase-crystallized silicon films

      JOURNAL OF APPLIED PHYSICS
    17. Voutsas, AT; Marmorstein, AM; Solanki, R
      The impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    18. Lee, GW; Lee, JW; Han, CH
      Substrate resistance effect on charge-pumping current in polycrystalline silicon thin film transistors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    19. Sameshima, T; Saitoh, K; Aoyma, N; Higashi, S; Kondo, M; Matsuda, A
      Electrical properties of pulsed laser crystallized silicon films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    20. GIUST GK; SIGMON TW; CAREY PG; WEISS B; DAVIS GA
      LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS FABRICATED FROM LASER-PROCESSED SPUTTERED-SILICON FILMS

      IEEE electron device letters
    21. GIUST GK; SIGMON TW
      HIGH-PERFORMANCE THIN-FILM TRANSISTORS FABRICATED USING EXCIMER-LASERPROCESSING AND GRAIN ENGINEERING

      I.E.E.E. transactions on electron devices
    22. LEE KH; PARK JK; JANG J
      A HIGH-PERFORMANCE POLYCRYSTALLINE SILICON THIN-FILM-TRANSISTOR WITH A SILICON-NITRIDE GATE INSULATOR

      I.E.E.E. transactions on electron devices
    23. KIM TK; IHN TH; LEE BI; JOO SK
      HIGH-PERFORMANCE LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY NEW METAL-INDUCED LATERAL CRYSTALLIZATION PROCESS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. SAMESHIMA T; SATOH M; SAKAMOTO K; OZAKI K; SAITOH K
      IMPROVEMENT IN CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY HEATING WITH HIGH-PRESSURE H2O VAPOR

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    25. SAMESHIMA T
      LASER PROCESSING FOR THIN-FILM-TRANSISTOR APPLICATIONS

      Materials science & engineering. B, Solid-state materials for advanced technology
    26. GIUST GK; SIGMON TW
      SELF-ALIGNED ALUMINUM TOP-GATE POLYSILICON THIN-FILM TRANSISTORS FABRICATED USING LASER RECRYSTALLIZATION AND GAS-IMMERSION LASER DOPING

      IEEE electron device letters
    27. OH JH; PARK CY; CHO NI; NAM HG
      GROWTH OF VERY-LOW TEMPERATURE POLYSILICON FILM BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    28. KIM KH; YOON SY; KIM CO; JANG J
      ION DOPING EFFECT IN LASER CRYSTALLIZED POLYCRYSTALLINE SILICON

      Journal of the Korean Physical Society
    29. YEH CF; CHEN TJ; JENG JN
      EFFECTS OF PROCESS TEMPERATURE ON POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED OXIDES AS GATE INSULATORS

      Journal of the Electrochemical Society
    30. ISHIHARA R; MATSUMURA M
      EXCIMER-LASER-PRODUCED SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    31. SAMESHIMA T; SAITOH K; SATO M; TAJIMA A; TAKASHIMA N
      CRYSTALLINE PROPERTIES OF LASER CRYSTALLIZED SILICON FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    32. SAMESHIMA T; TAKASHIMA N
      OPTICAL CHARACTERIZATION OF LASER-INDUCED CRYSTALLIZED SILICON FILMS

      Applied physics A: Materials science & processing
    33. SAMESHIMA T
      LASER-BEAM APPLICATION TO THIN-FILM TRANSISTORS

      Applied surface science
    34. CHOI KY; HAN MK
      2-STEP ANNEALED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

      Journal of applied physics
    35. SERIKAWA T; SHIRAI S; NAKAGAWA K; TAKAOKA S; OTO K; MURASE K; ISHIDA S
      TRANSPORT-PROPERTIES IN BAND-TAILS OF HIGH-MOBILITY POLY-SI TFTS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    36. SAMESHIMA T; SUNAGA Y; KOHNO A
      MEASUREMENTS OF TEMPERATURE DISTRIBUTION IN POLYCRYSTALLINE THIN-FILMTRANSISTORS CAUSED BY SELF-HEATING

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    37. BROTHERTON SD
      POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

      Semiconductor science and technology
    38. DIMITRIADIS CA; TASSIS DH
      OUTPUT CHARACTERISTICS OF SHORT-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

      Journal of applied physics
    39. CARLUCCIO R; STOEMENOS J; FORTUNATO G; MEAKIN DB; BIANCONI M
      MICROSTRUCTURE OF POLYCRYSTALLINE SILICON FILMS OBTAINED BY COMBINED FURNACE AND LASER ANNEALING

      Applied physics letters
    40. STROH RJ; PLAIS F; KRETZ T; LEGAGNEUX P; HUET O; MAGIS M; PRIBAT D; JIANG N; HUGON MC; AGIUS B
      LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS

      IEE proceedings. Part G. Circuits, devices and systems
    41. UCHIDA Y; SHIMIZU K; MATSUMURA M
      EFFECTS OF EXCIMER-LASER ANNEALING ON LOW-TEMPERATURE-DEPOSITED SILICON-NITRIDE FILM

      Applied surface science
    42. PANWAR OS; MOORE RA; RAZA SH; GAMBLE HS; ARMSTRONG BM
      COMPARATIVE-STUDY OF LARGE GRAINS AND HIGH-PERFORMANCE TFTS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AND APCVD AMORPHOUS-SILICON FILMS

      Thin solid films
    43. HE DY; OKADA N; FORTMANN CM; SHIMIZU I
      CARRIER TRANSPORT IN POLYCRYSTALLINE SILICON FILMS DEPOSITED BY A LAYER-BY-LAYER TECHNIQUE

      Journal of applied physics
    44. MATSUMOTO T; NAGAHIRO Y; NASU Y; OKI K; OKABE M
      CRYSTALLIZATION AT INITIAL-STAGE OF LOW-TEMPERATURE POLYCRYSTALLINE SILICON GROWTH USING ZNS BUFFER LAYER WITH (111) PREFERRED ORIENTATION

      Applied physics letters
    45. WATANABE H; MIKI H; SUGAI S; KAWASAKI K; KIOKA T
      CRYSTALLIZATION PROCESS OF POLYCRYSTALLINE SILICON BY KRF EXCIMER-LASER ANNEALING

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


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Documento generato il 28/05/20 alle ore 18:29:09