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La ricerca find articoli where soggetti phrase all words 'POLY-SI' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 255 riferimenti
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    1. Cubaynes, FN; Stolk, PA; Verhoeven, J; Roozeboom, F; Woerlee, PH
      The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    2. Rydberg, M; Smith, U
      Long-term stability and electrical properties of fluorine doped polysilicon IC-resistors

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    3. Sameshima, T; Kaneko, Y; Andoh, N
      Rapid crystallization of silicon films using Joule heating of metal films

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    4. Niira, K; Hakuma, H; Komoda, M; Fukui, K; Shirasawa, K
      Thin film poly-Si formation for solar cells by Flux method and Cat-CVD method

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    5. Moon, BY; Youn, JH; Won, SH; Jang, J
      Polycrystalline silicon film deposited by ICP-CVD

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    6. Tawada, Y; Yamagishi, H
      Mass-production of large size a-Si modules and future plan

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    7. Matsui, T; Yamazaki, T; Nagatani, A; Kino, K; Takakura, H; Hamakawa, Y
      2D-numerical analysis and optimum design of thin film silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    8. Schropp, REI; Alkemade, PFA; Rath, JK
      Poly-silicon films with low impurity concentration made by hot wire chemical vapour deposition

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    9. Jeon, JH; Lee, MC; Park, KC; Han, MK
      A new polycrystalline silicon TFT with a single grain boundary in the channel

      IEEE ELECTRON DEVICE LETTERS
    10. Kim, CH; Jung, SH; Yoo, JS; Han, MK
      Poly-Si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping

      IEEE ELECTRON DEVICE LETTERS
    11. Park, JW; Lee, MC; Nam, WJ; Song, IH; Han, MK
      A poly-Si TFT integrated gate-data line-crossover structure employing an air-gap for large-size AMLCD panel

      IEEE ELECTRON DEVICE LETTERS
    12. Fulks, RT; Ho, J; Boyce, JB
      A new laser-processed polysilicon TFT architecture

      IEEE ELECTRON DEVICE LETTERS
    13. Mishima, Y; Yoshino, K; Takeuchi, F; Ohgata, K; Takei, M; Sasaki, N
      High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

      IEEE ELECTRON DEVICE LETTERS
    14. Lee, MC; Jung, SH; Song, IH; Han, MK
      A new poly-Si TFT structure with air cavities at the gate-oxide edges

      IEEE ELECTRON DEVICE LETTERS
    15. Chang, KM; Chung, YH; Lin, GM; Deng, CG; Lin, JH
      Enhanced degradation in polycrystalline silicon thin-film transistors under dynamic hot-carrier stress

      IEEE ELECTRON DEVICE LETTERS
    16. Yaung, DN; Fang, YK; Chen, CH; Hung, CC; Tsao, FC; Wuu, SG; Liang, MS
      To suppress photoexcited current of hydrogenated polysilicon TFTs with lowtemperature oxidation of polychannel

      IEEE ELECTRON DEVICE LETTERS
    17. Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
      A novel thin-film transistor with self-aligned field induced drain

      IEEE ELECTRON DEVICE LETTERS
    18. Khakifirooz, A; Mohajerzadeh, S; Haji, S
      Field-assisted metal-induced crystallization of amorphous silicon films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    19. Tuda, M; Shintani, K; Ootera, H
      Profile evolution during polysilicon gate etching with low-pressure high-density Cl-2/HBr/O-2 plasma chemistries

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    20. Takatori, K; Imai, H; Asada, H; Imai, M
      Field-Sequential-Color poly-Si-TFT LCD

      NEC RESEARCH & DEVELOPMENT
    21. Yoon, DS; Baik, HK; Lee, SM; Roh, JS
      Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode ofhigh density memory devices

      JOURNAL OF ELECTRONIC MATERIALS
    22. Yousif, MYA; Willander, M; Lundgren, P; Caymax, M
      Behaviour of poly-Si1-xGex-gated MOS capacitors under different electricalstress conditions in the direct tunnelling regime

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    23. Komoda, M; Kamesaki, K; Masuda, A; Matsumura, H
      Formation of silicon films for solar cells by the Cat-CVD method

      THIN SOLID FILMS
    24. Feng, Y; Zhu, M; Liu, F; Liu, J; Han, H; Han, Y
      Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

      THIN SOLID FILMS
    25. Niira, K; Senta, H; Hakuma, H; Komoda, M; Okui, H; Fukui, K; Arimune, H; Shirasawa, K
      Thin film poly-Si formation by Cat-CVD method and its application for solar cells

      THIN SOLID FILMS
    26. Uchikoga, S; Ibaraki, N
      Low temperature poly-Si TFT-LCD by excimer laser anneal

      THIN SOLID FILMS
    27. Modreanu, M; Bercu, M; Cobianu, C
      Physical properties of polycrystalline silicon films related to LPCVD conditions

      THIN SOLID FILMS
    28. Watanabe, T; Sameshima, T; Nakahata, K; Kamiya, T; Shimizu, I
      Free carrier optical absorption used to analyze the electrical properties of polycrystalline silicon films formed by plasma enhanced chemical vapor deposition

      THIN SOLID FILMS
    29. Milovzorov, DE; Ali, AM; Inokuma, T; Kurata, Y; Suzuki, T; Hasegawa, S
      Optical properties of silicon nanocrystallites in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition

      THIN SOLID FILMS
    30. Christiansen, S; Lengsfeld, P; Krinke, J; Nerding, M; Nickel, NH; Strunk, HP
      Nature of grain boundaries in laser crystallized polycrystalline silicon thin films

      JOURNAL OF APPLIED PHYSICS
    31. Sameshima, T; Andoh, N; Takahashi, H
      Rapid crystallization of silicon films using electrical-current-induced joule heating

      JOURNAL OF APPLIED PHYSICS
    32. Mishima, Y; Yoshino, K; Takei, M; Sasaki, N
      Characteristics of low-temperature poly-Si TFTs on Al/glass substrates

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    33. Zeng, XB; Xu, ZY; Sin, JKO; Dai, YB; Wang, CG
      A novel two-step laser crystallization technique for low-temperature poly-Si TFTs

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    34. Uraoka, Y; Hatayama, T; Fuyuki, T; Kawamura, T; Tsuchihashi, Y
      Reliability of low temperature poly-silicon TFTs under inverter operation

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    35. Tuda, M; Shintani, K; Tanimura, J
      Study of plasma-surface interactions during overetch of polycrystalline silicon gate etching with high-density HBr/O-2 plasmas

      APPLIED PHYSICS LETTERS
    36. Chen, YC; Wu, YCS; Chao, CW; Hu, GR; Feng, MS
      Electroless plating Ni induced crystallization of amorphous silicon thin films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    37. Qin, W; Ast, DG; Kamins, TI
      Transmission electron microscopy study of polycrystalline Si and Si0.69Ge0.31 thin films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    38. Yoshimoto, S; Oh, CH; Matsumura, M
      A new sample structure for position-controlled giant-grain growth of silicon using phase-modulated excimer-laser annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    39. Nakata, M; Inoue, K; Matsumura, M
      A new nucleation-site-control excimer-laser-crystallization method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    40. Yeh, WC; Matsumura, M
      Effects of a low-melting-point underlayer on excimer-laser-induced lateralcrystallization of Si thin-films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. Uraoka, Y; Hatayama, T; Fuyuki, T; Kawamura, T; Tsuchihashi, Y
      Hot carrier effects in low-temperature polysilicon thin-film transistors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    42. Hatano, T; Ito, Y; Nakajima, A; Yokoyama, S
      Fabrication technologies for Double-SiO2-barrier metal-oxide-semiconductortransistor with a poly-Si dot

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    43. Kitahara, K; Nakajima, K; Moritani, A
      Observation of defects in laser-crystallized polysilicon thin films by hydrogenation and Raman spectroscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    44. Jin, ZH
      Comparison study of metal induced lateral crystallized and solid-phase crystallized polycrystalline silicon thin film transistors with different channel thickness

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    45. Le Barny, P; Dentan, V; Facoetti, H; Vergnolle, M; Veriot, G; Servet, B; Pribat, D
      Application of organic electroluminescent materials in visualisation

      COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
    46. Levinson, JA; Shaqfeh, ESG; Balooch, M; Hamza, AV
      Ion-assisted etching and profile development of silicon in molecular and atomic chlorine

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    47. Choi, ES; Shin, WC; Suh, TS; Park, SS; Yoon, SG
      Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

      INTEGRATED FERROELECTRICS
    48. Sameshima, T; Ozaki, K; Andoh, N
      Large crystalline grain growth using current-induced Joule heating

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    49. Zhu, M; Cao, Y; Guo, X; Liu, J; He, M; Sun, K
      Microstructure of poly-Si thin films prepared at low temperatures

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    50. Lee, MC; Jeon, JH; Yoo, JS; Han, MK
      New poly-Si TFT with selectively doped region in the active layer

      IEICE TRANSACTIONS ON ELECTRONICS
    51. Kim, TK; Kim, GB; Lee, BI; Joo, SK
      The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization

      IEEE ELECTRON DEVICE LETTERS
    52. Oh, JH; Chung, HJ; Lee, NI; Han, CH
      A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell

      IEEE ELECTRON DEVICE LETTERS
    53. Choi, YK; Asano, K; Lindert, N; Subramanian, V; King, TJ; Bokor, J; Hu, CM
      Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

      IEEE ELECTRON DEVICE LETTERS
    54. Jeon, JH; Yoo, JS; Park, CM; Choi, HS; Han, MK
      A novel method for a smooth interface at poly-SiOx/SiO2 by employing selective etching

      IEEE ELECTRON DEVICE LETTERS
    55. Kwak, WK; Cho, BR; Yoon, SY; Park, SJ; Jang, J
      A high performance thin-film transistor using a low temperature poly-Si bysilicide mediated crystallization

      IEEE ELECTRON DEVICE LETTERS
    56. Howell, RS; Stewart, M; Karnik, SV; Saha, SK; Hatalis, MK
      Poly-Si thin-film transistors on steel substrates

      IEEE ELECTRON DEVICE LETTERS
    57. Park, KC; Choi, KY; Yoo, JS; Han, MK
      A new poly-Si thin-film transistor with poly-Si/a-Si double active layer

      IEEE ELECTRON DEVICE LETTERS
    58. Lane, JM; Klemens, FP; Bogart, KHA; Malyshev, MV; Lee, JTC
      Feature evolution during plasma etching. II. Polycrystalline silicon etching

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    59. Tanabe, H
      Effect of cooling rate on excimer laser crystallization of silicon thin films

      NEC RESEARCH & DEVELOPMENT
    60. Dassow, R; Kohler, JR; Helen, Y; Mourgues, K; Bonnaud, O; Mohammed-Brahim, T; Werner, JH
      Laser crystallization of silicon for high-performance thin-film transistors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    61. Boo, JH; Park, HK; Nam, KH; Han, JG
      High rate deposition of poly-Si thin films at low temperature using a new designed magnetron sputtering source

      SURFACE & COATINGS TECHNOLOGY
    62. Lee, SD; Nam, SY; Ha, JH; Park, JW
      Analysis of the sidewall films formed during Si trench etching with photoresist mask in Cl-2/HBr-based plasma

      APPLIED SURFACE SCIENCE
    63. Poon, MC; Deng, F; Chan, M; Chan, WY; Lau, SS
      Resistivity and thermal stability of nickel mono-silicide

      APPLIED SURFACE SCIENCE
    64. Chopra, S; Gupta, RS
      An analytical model for turn-on characteristics of short channel polycrystalline-silicon thin-film transistor for circuit simulation

      MICROELECTRONIC ENGINEERING
    65. Sabbadini, A; Cazzaniga, F; Marangon, T
      Influence of TiSi2 formation temperature on film thermal stability

      MICROELECTRONIC ENGINEERING
    66. Liou, BW; Lee, CL
      Plasma effects of fluorine implantation on As+-doped polycrystalline silicon thin films of various thicknesses

      THIN SOLID FILMS
    67. Ono, K; Tuda, M
      Dynamics of plasma-surface interactions and feature profile evolution during pulsed plasma etching

      THIN SOLID FILMS
    68. Lim, KM; Kang, HC; Sung, MY
      A study on the poly-Si TFT and novel pixel structure for low flicker

      MICROELECTRONICS JOURNAL
    69. Bogart, KHA; Donnelly, VM
      Composition of trench sidewalls and bottoms for SiO2-masked Si(100) etchedin Cl-2 plasmas

      JOURNAL OF APPLIED PHYSICS
    70. Ponomarev, YV; Stolk, PA; Salm, C; Schmitz, J; Woerlee, PH
      High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    71. Chopra, S; Gupta, RS
      Modeling of short geometry polycrystalline-silicon thin-film transistor

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    72. Giust, GK; Sigmon, TW
      Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    73. Seo, JW; Akiyama, S; Aya, Y; Nohda, T; Hamada, H; Kajiyama, K; Kanaya, M; Kuwano, H
      Lateral solid-phase recrystallization from the crystal seed selectively formed by excimer laser annealing in Ge-ion-implanted amorphous silicon films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. Shih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY
      Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    75. Kim, YH; Chang, SK; Kim, SS; Choi, JG; Lee, SH; Hahn, DH; Kim, HD
      Characteristics of dual polymetal (W/WNx/poly-Si) gate complementary metaloxide semiconductor for 0.1 mu m dynamic random access memory technology

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    76. Jeon, JH; Lee, MC; Park, KC; Han, MK
      New excimer laser recrystallization of poly-Si for effective grain growth and grain boundary arrangement

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    77. Matsuo, N; Aya, Y; Kanamori, T; Nouda, T; Hamada, H; Miyoshi, T
      Study of crystal growth mechanism for poly-Si film prepared by excimer laser annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    78. Shih, PS; Chang, TC; Huang, TY; Yeh, CF; Chang, CY
      Characterization and reliability of lightly-doped-drain polysilicon thin-film transistors with oxide sidewall spacer formed by one-step selective liquid phase deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    79. Kataoka, Y; Kanoh, M; Makino, N; Suzuki, K; Saitoh, S; Miyajima, H; Mori, Y
      Dry etching characteristics of Si-based materials using CF4/O-2 atmospheric-pressure glow discharge plasma

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    80. Mimura, A; Shinagawa, Y; Kawachi, G; Onisawa, K; Minemura, T; Hara, M; Ishida, T; Takeda, T
      Flat and large poly-Si grains by a continuous process of plasma-enhanced chemical vapor deposition of a-Si and its direct laser crystallization

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    81. Sameshima, T; Ozaki, K
      Current-induced joule heating used to crystallize silicon thin films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    82. Serikawa, T; Omata, F
      High-mobility poly-Si thin film transistors fabricated on stainless-steel foils by low-temperature processes using sputter-depositions

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    83. Gosain, DP; Noguchi, T; Usui, S
      High mobility thin film transistors fabricated on a plastic substrate at aprocessing temperature of 110 degrees C

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    84. Hara, A; Sasaki, N
      Control of nucleation and solidification direction of polycrystalline silicon by excimer laser irradiation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    85. Cheng, HC; Huang, CY; Wang, FS; Lin, KH; Tarntair, FG
      Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    86. Uraoka, Y; Hatayama, T; Fuyuki, T; Kawamura, T; Tsuchihashi, Y
      Reliability of high-frequency operation of low-temperature polysilicon thin film transistors under dynamic stress

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    87. Raaijmakers, IJ; Sprey, H; Storm, A; Bergman, T; Italiano, J; Meyer, D
      Enabling technologies for forming and contacting shallow junctions in Si: HF-vapor cleaning and selective epitaxial growth of Si and SiGe

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    88. Chae, JH; Lee, JY; Kang, SW
      Measurement of thermal expansion coefficient of poly-Si using microgauge sensors

      SENSORS AND ACTUATORS A-PHYSICAL
    89. Kwon, Y; Lee, C
      Silicidation behaviors of Co/Ti and Co/Hf bilayers on doped polycrystalline Si substrate

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    90. Han, JI; Yang, GY; Han, CH
      A new self-aligned offset staggered polysilicon thin-film transistor

      IEEE ELECTRON DEVICE LETTERS
    91. Tung, YJ; Boyce, J; Ho, J; Huang, XJ; King, TJ
      A comparison of hydrogen and deuterium plasma treatment effects on polysilicon TFT performance and DC reliability

      IEEE ELECTRON DEVICE LETTERS
    92. Lee, JW; Lee, NI; Han, CH
      Stability of short-channel P-channel polysilicon thin-film transistors with ECR N2O-plasma gate oxide

      IEEE ELECTRON DEVICE LETTERS
    93. Lee, NI; Lee, JW; Kim, HS; Han, CH
      High-performance EEPROM's using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N2O-plasma oxide

      IEEE ELECTRON DEVICE LETTERS
    94. Okumura, F
      Development of poly-Si TFT in NEC

      NEC RESEARCH & DEVELOPMENT
    95. Asada, H; Sera, K; Okumura, F
      High-performance low-temperature poly-Si TFTs and circuits

      NEC RESEARCH & DEVELOPMENT
    96. Haga, H; Fujieda, I; Okumura, F
      A 200/400dpi photodiode-array integrated image sensor with a poly-Si TFT driver

      NEC RESEARCH & DEVELOPMENT
    97. Asada, H; Sera, K; Hirata, K; Sekine, H; Honbo, N; Konno, T
      A 2.4-inch, SXGA low-temperature poly-Si TFT-LCD light valve

      NEC RESEARCH & DEVELOPMENT
    98. Lee, KH; Hwang, JT; Jung, CY; Ihn, TH; Yi, SJ; Jeon, HI; Lee, WG; Choi, DH; Jang, J; Zahorski, D; Lee, CH
      Gigantic crystal grain by excimer laser with a pulse duration of 200 ns and its application to TFT

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    99. Choi, ES; Yoon, SG; Choi, WY; Kim, HG
      Integration of platinum bottom electrode on poly-Si for ferroelectric thinfilms

      APPLIED SURFACE SCIENCE
    100. Ahn, JH; Lee, WJ; Kim, HG
      Oxygen diffusion through RuO2 bottom electrode of integrated ferroelectriccapacitors

      MATERIALS LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/10/20 alle ore 02:39:48