Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'PHASE EPITAXY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 2584 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Siebentritt, S; Kampschulte, T; Bauknecht, A; Blieske, U; Harneit, W; Fiedeler, U; Lux-Steiner, M
      Cd-free buffer layers for CIGS solar cells prepared by a dry process

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Chaussende, D; Ferro, G; Monteil, Y
      Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

      JOURNAL OF CRYSTAL GROWTH
    3. Ahn, SH; Lee, SH; Nahm, KS; Suh, EK; Hong, MH
      Catalytic growth of high quality GaN micro-crystals

      JOURNAL OF CRYSTAL GROWTH
    4. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Han, P; Wang, XH; Wang, D
      Statistical investigation on morphology development of gallium nitride in initial growth stage

      JOURNAL OF CRYSTAL GROWTH
    5. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part I - Island density

      JOURNAL OF CRYSTAL GROWTH
    6. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part II - Island size

      JOURNAL OF CRYSTAL GROWTH
    7. Lu, DC; Duan, SK
      Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

      JOURNAL OF CRYSTAL GROWTH
    8. Kita, K; Wen, CJ; Otomo, J; Yamada, K; Komiyama, H; Takahashi, H
      Study on the lateral growth of silicon films from metal solutions with temperature gradient

      JOURNAL OF CRYSTAL GROWTH
    9. Heimbrodt, W; Hartmann, T; Klar, PJ; Lampalzer, M; Stolz, W; Volz, K; Schaper, A; Treutmann, W; von Nidda, HAK; Loidl, A; Ruf, T; Sapega, VF
      Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As

      PHYSICA E
    10. Koide, T; Isogai, Y; Fujiwara, Y; Takeda, Y
      OMVPE growth and properties of Dy-doped III-V semiconductors

      PHYSICA E
    11. Vernon-Parry, KD; Abd-El-Rahman, KF; Brough, I; Evans-Freeman, JH; Zhang, J; Peaker, AR
      The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    12. Krier, A
      Physics and technology of mid-infrared light emitting diodes

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    13. Mohammad, SN
      Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    14. Hicks, RF; Fu, Q; Li, L; Visbeck, SB; Sun, Y; Li, CH; Law, DC
      The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors

      JOURNAL DE PHYSIQUE IV
    15. Pawlowski, RP; Salinger, AG; Romero, LA; Shadid, JN
      Computational design and analysis of MOVPE reactors

      JOURNAL DE PHYSIQUE IV
    16. Hsu, CH; Ip, KP; Johnson, JW; Chu, SNG; Kryliouk, O; Pearton, SJ; Li, L; Chai, BHT; Anderson, TJ; Ren, F
      Wet chemical etching of LiGaO2 and LiAlO2

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    17. Davis, RF; Gehrke, T; Linthicum, KJ; Rajagopal, P; Roskowski, AM; Zheleva, T; Preble, EA; Zorman, CA; Mehregany, M; Schwarz, U; Schuck, J; Grober, R
      Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    18. Visconti, P; Reshchikov, MA; Jones, KM; Wang, DF; Cingolani, R; Morkoc, H; Molnar, RJ; Smith, DJ
      Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    19. Poole, PJ; McCaffrey, J; Williams, RL; Lefebvre, J; Chithrani, D
      Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    20. Ratnikov, VV; Mamutin, VV; Vekshin, VA; Ivanov, SV
      X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses

      PHYSICS OF THE SOLID STATE
    21. Gumenjuk-Sichevskaja, JV; Sizov, FF; Ovsyuk, VN; Vasil'ev, VV; Esaev, DG
      Charge transport in HgCdTe-based n(+)-p photodiodes

      SEMICONDUCTORS
    22. Zotova, NV; Karandashev, SA; Matveev, BA; Remennyi, MA; Stus', NM; Talalakin, GN; Shustov, VV
      Optically pumped mid-infrared InGaAs(Sb) LEDs

      SEMICONDUCTORS
    23. Stuckings, MF; Fischer, B; Giroult, G; Cuevas, A; Stocks, MJ; Blakers, AW
      Gallium contacts on p-type silicon substrates

      PROGRESS IN PHOTOVOLTAICS
    24. Buchal, C; Siegert, M
      Ferroelectric thin films for optical applications

      INTEGRATED FERROELECTRICS
    25. Zhang, W; Li, C; Du, Z
      A thermodynamic database of the Al-Ga-In-P-As-Sb-C-H system and its application in the design of an epitaxy process for III-V semiconductors

      JOURNAL OF PHASE EQUILIBRIA
    26. Qi, X; Perkins, GK; Caplin, AD; MacManus-Driscoll, JL
      Solubility and LPE growth of mixed REBa2CU3O7-delta

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    27. Izumi, T; Hobara, N; Kakimoto, K; Izumi, T; Hasegawa, K; Kai, M; Honjo, T; Yao, X; Fuji, H; Nakamura, Y; Shiohara, Y
      Coated conductor of RE-Ba-Cu-O thick film on metal tape fabricated by liquid phase epitaxy process

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    28. Maeda, T; Kim, SB; Suga, T; Kurosaki, H; Yuasa, T; Yamada, Y; Yamada, Y; Yoshino, H; Yamazaki, M; Thanh, TD; Watanabe, T; Matsumoto, K; Hirabayashi, I
      TYTBa2CU3O7-delta thick films grown on textured metal substrates by liquid-phase epitaxy process

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    29. Izumi, T; Yao, X; Hobara, N; Kakimoto, K; Haegawa, K; Nakamura, Y; Izumi, T; Shiohara, Y
      LPE growth of RE123 crystals from NiO saturated solution

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    30. Kudo, K; Yashiki, K; Morimoto, T; Hisanaga, Y; Sudo, S; Muroya, Y; Tamanuki, T; Hatakeyama, H; Mori, K; Sasaki, T
      Multirange wavelength-selectable microarray light sources simultaneously fabricated on a wafer covering the entire C-band

      IEEE PHOTONICS TECHNOLOGY LETTERS
    31. Zheng, XH; Qu, B; Wang, YT; Dai, ZZ; Yang, H; Liang, JW
      Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) byAPCVD

      SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
    32. Wang, YS; Li, JM; Wang, YB; Wang, YT; Sun, GS; Lin, LY
      The effects of pre-irradiation on the formation of Si1-xCx alloys

      ACTA PHYSICA SINICA
    33. Burkhalter, R; Dohnke, I; Hulliger, J
      Growing of bulk crystals and structuring waveguides of fluoride materials for laser applications

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    34. Morkoc, H
      III-Nitride semiconductor growth by MBE: Recent issues

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    35. As, DJ; Kohler, U
      Carbon - an alternative acceptor for cubic GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    36. Cadoret, R; Trassoudaine, A
      Growth of gallium nitride by HVPE

      JOURNAL OF PHYSICS-CONDENSED MATTER
    37. Amano, H; Akasaki, I
      Novel aspects of the growth of nitrides by MOVPE

      JOURNAL OF PHYSICS-CONDENSED MATTER
    38. Hiramatsu, K
      Epitaxial lateral overgrowth techniques used in group III nitride epitaxy

      JOURNAL OF PHYSICS-CONDENSED MATTER
    39. Zheng, MJ; Zhang, LD; Zhang, JG
      Size dependence of non-linear optical properties Of SiO2 thin films containing InP nanocrystals

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    40. Morkoc, H
      Comprehensive characterization of hydride VPE grown GaN layers and templates

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    41. McCann, MJ; Catchpole, KR; Weber, KJ; Blakers, AW
      A review of thin-film crystalline silicon for solar cell applications. Part 1: Native substrates

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    42. Akahori, K; Wang, G; Okumura, K; Soga, T; Jimbo, T; Umeno, M
      Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    43. Kita, K; Yamatsugu, H; Wen, CJ; Komiyama, H; Yamada, K
      Zone-defined growth of multicrystalline silicon film from metal-silicon solution

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    44. Nishida, S; Nakagawa, K; Iwane, M; Iwasaki, Y; Ukiyo, N; Mizutani, M; Shoji, T
      Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    45. Dubs, C; Ruske, JP; Werner, E; Tunnermann, A; Schmidt, C; Bruchlos, G
      Epitaxial grown K1-xRbxTiOPO4 films with extremely flat surfaces for waveguiding

      OPTICAL MATERIALS
    46. Zhang, ZC; Huang, BB; Cui, DL
      Growth of AlxGa1-xP on GaAs substrate by metalorganic vapor phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    47. Dumont, H; Auvray, L; Monteil, Y; Bouix, J
      Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    48. Hiramatsu, K; Haino, M; Yamaguchi, M; Miyake, H; Motogaito, A; Sawaki, N; Iyechika, Y; Maeda, T
      GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    49. Witte, H; Krtschil, A; Lisker, M; Krost, A; Christen, J; Kuhn, B; Scholz, F
      Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    50. Muret, P; Philippe, A; Monroy, E; Munoz, E; Beaumont, B; Omnes, F; Gibart, P
      Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    51. Prochazkova, O; Zavadil, J; Zdansky, K
      LPE InP layers grown in the presence of rare-earth elements

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    52. Rakovics, V; Balazs, J; Puspoki, S; Frigeri, C
      Influence of LPE growth conditions on the electroluminescence properties of InP/InGaAs(P) infrared emitting diodes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    53. Kuznetsov, N; Tsagaraki, K; Bauman, D; Morozov, A; Nikitina, I; Ivantsov, V; Zekentes, K
      Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    54. Fornari, R; Bosi, M; Armani, N; Attolini, G; Ferrari, C; Pelosi, C; Salviati, G
      Hydride vapour phase epitaxy growth and characterisation of GaN layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    55. Kim, HM; Oh, JE; Kang, TW
      Nonuniformities in free-standing GaN substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    56. Tanaka, I; Ashizawa, K; Tanabe, H; Watauchi, S; Yamanaka, J
      Preparation of La2-xSrxCuO4 single-crystalline films by infrared-heated liquid phase epitaxial technique

      PHYSICA C
    57. Kurosaki, H; Yuasa, T; Maeda, T; Yamada, Y; Kim, SB; Watanabe, T; Wada, K; Hirabayashi, I
      Fabrication of buffer layers and seed layers on biaxially textured Ni tapes for YBCO superconducting wire

      PHYSICA C
    58. Kim, S; Maeda, T; Yamada, Y; Suga, T; Yamada, Y; Watanabe, T; Matsumoto, K; Hirabayashi, I
      Fabrication of seed/buffer layers on metallic substrates for YBCO coated conductors

      PHYSICA C
    59. Miura, T; Yamada, Y; Suga, T; Huang, DX; Kim, S; Maeda, T; Hirabayashi, I; Ikuta, H; Mizutani, U
      Non-cuprate thin films as candidates of seed layer for liquid phase epitaxy process

      PHYSICA C
    60. Izumi, T; Hobara, N; Kakimoto, K; Izumi, T; Hasegawa, K; Kai, M; Honjo, T; Yao, X; Fuji, H; Nakamura, Y; Shiohara, Y
      Liquid phase epitaxy processed coated conductors on metal tapes

      PHYSICA C
    61. Hobara, N; Asada, S; Izumi, T; Yao, X; Hasegawa, K; Kai, M; Kuzunetsov, MS; Fuji, H; Honjo, T; Krauns, C; Nakamura, Y; Izumi, T; Shiohara, Y
      Fabrication of YBa2Cu3Oy layer on metal substrate using liquid phase epitaxy method

      PHYSICA C
    62. Maeda, T; Kim, S; Suga, T; Kurosaki, H; Yuasa, T; Yamada, Y; Watanabe, T; Matsumoto, K; Hirabayashi, I
      Characterization of YBa2Cu3O7-delta films grown on NiO buffer layer by liquid-phase epitaxy process

      PHYSICA C
    63. Kai, M; Hobara, N; Hasegawa, K; Izumi, T; Fuji, H; Honjo, T; Nakamura, Y; Izumi, T; Shiohara, Y
      Optimization of seed film for fabrication of Y123 LPE film on metal substrate with MgO buffer layer

      PHYSICA C
    64. Krauns, C; Koyama, S; Izumi, T; Izumi, T; Nakamura, Y; Shiohara, Y
      Initial stage in the liquid phase epitaxy of Nd123 of films: dependence ofgrowth rate on process parameter

      PHYSICA C
    65. Yao, X; Nomura, K; Yoshizumi, M; Kuznetsov, M; Nakamura, Y; Izumi, T; Shiohara, Y
      Superconducting transition temperature of NdBCO liquid phase epitaxy film on MgO substrate and effect of Mg diffusion

      PHYSICA C
    66. Yao, X; Izumi, T; Hobara, N; Nakamura, Y; Izumi, T; Shiohara, Y
      REBCO superconductor on Ni-NdBCO buffered MgO substrate by liquid phase epitaxy process (RE = Nd, Sm, Y)

      PHYSICA C
    67. Nomura, K; Hoshi, S; Yao, X; Nakamura, Y; Izumi, T; Shiohara, Y
      Growth mechanism of RE-Ba-Cu-O film on MgO substrate by liquid phase epitaxy

      PHYSICA C
    68. Yasuda, T; Uchiyama, T; Tonouchi, M; Takano, S
      Growth of Bi2Sr2CaCu2O8+x single-crystalline films by liquid phase epitaxy

      PHYSICA C
    69. Eltsev, Y; Nakao, K; Yamada, Y; Hirabayashi, I; Ishimaru, Y; Tanabe, K; Enomoto, Y; Wen, JG; Koshizuka, N
      Charge transport across 45 degrees asymmetrical grain boundary fabricated in YBa2Cu3O7-x films grown by the liquid phase epitaxy

      PHYSICA C
    70. Hasegawa, K; Hobara, N; Nakamura, Y; Izumi, T; Shiohara, Y
      Preparation of MgO films on metal substrate as a buffer layer for liquid phase epitaxy processed RE123 coated conductor

      PHYSICA C
    71. Walukiewicz, W
      Intrinsic limitations to the doping of wide-gap semiconductors

      PHYSICA B
    72. Yoshino, K; Mitani, N; Sugiyama, M; Chichibu, SF; Komaki, H; Ikari, T
      Optical and electrical properties of AgIn(SSe)(2) crystals

      PHYSICA B
    73. Albe, V; Lewis, LJ
      Optical properties of InAs/InP ultrathin quantum wells

      PHYSICA B
    74. Zhang, JC; Chen, J; Sun, WH; Chen, KM; Tong, YZ; Yang, ZJ; Zhang, GY; Qin, GG
      High-resolution transmission microscope observation of both nanometer crystalline diamond and graphite in C-implanted GaN

      PHYSICA B
    75. Okamoto, K; Kawakami, Y; Fujita, S; Terazima, M
      Photothermal processes of wide-bandgap semiconductors probed by the transient grating method

      ANALYTICAL SCIENCES
    76. Ono, S; Hirano, S
      Processing of highly oriented lithium niobate films through chemical solution deposition

      JOURNAL OF MATERIALS RESEARCH
    77. Gwo, S; Yasuda, T; Yamasaki, S
      Selective-area chemical-vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    78. Guan, ZP; Cai, AL; Porter, H; Cabalu, J; Chen, J; Huang, S; Giedd, RE
      GaN grown on two-step cleaned C-terminated 6H-SiC by molecular-beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    79. Yu, PY; Martinez, G; Zeman, J; Uchida, K
      Spectroscopic study of partially ordered semiconductor heterojunction under high pressure and high magnetic field

      JOURNAL OF RAMAN SPECTROSCOPY
    80. Cho, HK; Lee, JY; Kim, KS; Yang, GM
      Growth of a GaN overlayer with low threading dislocation density using stacking faults

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    81. Song, YH; Kim, JH; Jang, HJ; Joon, SR; Yang, JW; Lim, KY; Yang, GM
      Effect of growth conditions on GaN grown by lateral epitaxial overgrowth

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    82. Yamaguchi, T; Saito, Y; Kano, K; Araki, T; Teraguchi, N; Suzuki, A; Nanishi, Y
      Study of epitaxial relationship in InN growth on sapphire (0001) by RF-MBE

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    83. Hong, YK; Kim, CS; Jung, HS; Hong, CH; Kim, MH; Leem, SJ; Cho, HK; Lee, JY
      Structural properties of GaN grown by pendeo-epitaxy with in-doping

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    84. Yamamoto, A; Tanikawa, T; Ikuta, K; Adachi, M; Hashimoto, A; Ito, Y
      Non-monotonous behavior of in-doped GaN grown by MOVPE with nitrogen carrier gas

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    85. Beaumont, B; Vennegues, P; Gibart, P
      Epitaxial lateral overgrowth of GaN

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    86. Neugebauer, J
      Ab initio analysis of surface structure and adatom kinetics of group-III nitrides

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    87. Browning, ND; Arslan, I; Moeck, P; Topuria, T
      Atomic resolution scanning transmission electron microscopy

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    88. Kret, S; Ruterana, P; Rosenauer, A; Gerthsen, D
      Extracting quantitative information from high resolution electron microscopy

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    89. Wang, B; Chua, SJ
      Optical properties of InAs quantum dots grown on InP (001) substrate by MOCVD

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    90. Kobayashi, T; Inoue, K; Prins, AD; Uchida, K; Nakahara, J
      High pressure photoluminescence study of the GaAs/partially ordered GaInP interface

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    91. Ronning, C; Carlson, EP; Davis, RF
      Ion implantation into gallium nitride

      PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
    92. Zirpoli, A; Varela, JA; Gonzalez, AHM; Gimenez, R; Cavalheiro, AA; Cilense, M; Zaghete, MA; Stojanovic, B
      Influence of thermal treatment on the crystallization and roughness of LinbO(3) thin films deposited by a spin coating method

      BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO
    93. Soderstrom, D; Lourdudoss, S; Dadgar, A; Stenzel, O; Bimberg, D; Schumann, H
      Dopant diffusion and current-voltage studies on epitaxial InP codoped withRu and Fe

      JOURNAL OF ELECTRONIC MATERIALS
    94. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Wang, XH; Wang, D; Han, PD
      Indium doping effect on GaN in the initial growth stage

      JOURNAL OF ELECTRONIC MATERIALS
    95. Barrios, CA; Messmer, ER; Holmgren, M; Risberg, A; Halonen, J; Lourdudoss, S
      Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe

      JOURNAL OF ELECTRONIC MATERIALS
    96. Zubia, D; Zhang, S; Bommena, R; Sun, X; Brueck, SRJ; Hersee, SD
      Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE

      JOURNAL OF ELECTRONIC MATERIALS
    97. Bostrup, G; Hess, KL; Ellsworth, J; Cooper, D; Haines, R
      LPE HgCdTe on sapphire status and advancements

      JOURNAL OF ELECTRONIC MATERIALS
    98. Zhang, XG; Rodriguez, A; Li, P; Jain, FC; Ayers, JE
      A novel approach for the complete removal of threading dislocations from ZnSe on GaAs (001)

      JOURNAL OF ELECTRONIC MATERIALS
    99. Weiss, E; Klin, O; Benory, E; Kedar, E; Juravel, Y
      Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers

      JOURNAL OF ELECTRONIC MATERIALS
    100. Mitra, P; Case, FC; Glass, HL; Speziale, VM; Flint, JP; Tobin, SP; Norton, PW
      HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy

      JOURNAL OF ELECTRONIC MATERIALS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 08/08/20 alle ore 22:22:17