Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'PECVD' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 318 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Mahnke, M; Wiechmann, S; Heider, HJ; Blume, O; Muller, J
      Aluminum oxide doped with erbium, titanium and chromium for active integrated optical applications

      AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
    2. Rosen, IG; Parent, T; Cooper, C; Chen, P; Madhukar, A
      A neural-network-based approach to determining a robust process recipe forthe plasma-enhanced deposition of silicon nitride thin films

      IEEE TRANSACTIONS ON CONTROL SYSTEMS TECHNOLOGY
    3. Ding, SJ; Wang, PF; Zhang, W; Wang, JT; Lee, WW
      Analysis of the x-ray photoelectron spectra of a-SiOCF films prepared by plasma-enhanced chemical vapour deposition

      CHINESE PHYSICS
    4. Wang, CL; Kobayashi, Y; Hirata, K; Suzuki, R; Ohdaira, T; Mikado, T
      Nanometer-scale voids in PECVD silicon-oxide films probed by variable-energy positron lifetime spectroscopy: A comparison with infrared spectroscopy

      RADIATION PHYSICS AND CHEMISTRY
    5. Tan, IH; da Silva, MLP; Demarquette, NR
      Paper surface modification by plasma deposition of double layers of organic silicon compounds

      JOURNAL OF MATERIALS CHEMISTRY
    6. Ding, SJ; Zhang, DW; Wang, JT; Lee, WW
      Low dielectric constant SiO2 : C,F films prepared from Si(OC2H5)(4)/C4F8/Ar by plasma-enhanced CVD

      CHEMICAL VAPOR DEPOSITION
    7. Ali, AM; Inokuma, T; Kurata, Y; Hasegawa, S
      Luminescence properties of nanocrystalline silicon films

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    8. Koch, C; Ito, M; Schubert, M
      Low-temperature deposition of amorphous silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    9. Itoh, T; Yamamoto, K; Harada, H; Yamana, N; Yoshida, N; Inouchi, H; Nonomura, S; Nitta, S
      Role of hydrogen in hydrogenated microcrystalline silicon

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    10. Harada, H; Yoshida, N; Yamamoto, K; Itoh, T; Inagaki, K; Inouchi, H; Yamana, N; Aoki, T; Nonomura, S; Nitta, S
      The creation of hydrogen radicals by the hot-wire technique and its application for mu c-Si : H

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    11. Rech, B; Roschek, T; Muller, J; Wieder, S; Wagner, H
      Amorphous and microcrystalline silicon solar cells prepared at high deposition rates using RF (13.56 MHz) plasma excitation frequencies

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    12. Guo, LH; Kondo, M; Matsuda, A
      Microcrystalline Si films deposited from dichlorosilane using RF-PECVD

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    13. Andoh, N; Kamisako, K; Sameshima, T; Saitoh, T
      Epitaxial growth of polycrystalline films formed by microwave plasma chemical vapor deposition at low temperatures

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    14. Nagel, H; Metz, A; Hezel, R
      Porous SiO2 films prepared by remote plasma-enhanced chemical vapour deposition - a novel antireflection coating technology for photovoltaic modules

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    15. Aberle, AG
      Overview on SiN surface passivation of crystalline silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    16. Fujii, S; Fukawa, Y; Takahashi, H; Inomata, Y; Okada, K; Fukui, K; Shirasawa, K
      Production technology of large-area multicrystalline silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    17. Lenkeit, B; Steckemetz, S; Artuso, F; Hezel, R
      Excellent thermal stability of remote plasma-enhanced chemical vapour deposited silicon nitride films for the rear of screen-printed bifacial siliconsolar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    18. Schmidt, J; Kerr, M
      Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    19. Bertran, E; Martinez, E; Viera, G; Farjas, J; Roura, P
      Mechanical properties of nanometric structures of Si/SiC, C/SiC and C/SiN produced by PECVD

      DIAMOND AND RELATED MATERIALS
    20. Freire, FL; da Costa, MEHM; Jacobsohn, LG; Franceschini, DF
      Film growth and relationship between microstructure and mechanical properties of a-C : H : F films deposited by PECVD

      DIAMOND AND RELATED MATERIALS
    21. Chung, SJ; Lim, SH; Lee, CH; Jang, J
      Novel plasma chemical vapor deposition method of carbon nanotubes at low temperature for field emission display application

      DIAMOND AND RELATED MATERIALS
    22. Lim, IS; Jang, GE; Kim, CK; Yoon, DH
      Fabrication and gas sensing characteristics of pure and Pt-doped gamma-Fe2O3 thin film

      SENSORS AND ACTUATORS B-CHEMICAL
    23. Lee, ET; Jang, GE; Kim, CK; Yoon, DH
      Fabrication and gas sensing properties of alpha-Fe2O3 thin film prepared by plasma enhanced chemical vapor deposition (PECVD)

      SENSORS AND ACTUATORS B-CHEMICAL
    24. Hellegouarc'h, F; Arefi-Khonsari, F; Planade, R; Amouroux, J
      PECVD prepared SnO2 thin films for ethanol sensors

      SENSORS AND ACTUATORS B-CHEMICAL
    25. Kramer, T; Paul, O
      Surface micromachined ring test structures to determine mechanical properties of compressive thin films

      SENSORS AND ACTUATORS A-PHYSICAL
    26. Zhang, X; Chen, KS; Ghodssi, R; Ayon, AA; Spearing, SM
      Residual stress and fracture in thick tetraethylorthosilicate (TEOS) and silane-based PECVD oxide films

      SENSORS AND ACTUATORS A-PHYSICAL
    27. Medjdoub, M; Courant, JL; Maher, H; Post, G
      Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    28. Lewis, HGP; Caulfield, JA; Gleason, KK
      Perfluorooctane sulfonyl fluoride as an initiator in hot-filament chemicalvapor deposition of fluorocarbon thin films

      LANGMUIR
    29. Babcock, JA; Balster, SG; Pinto, A; Dirnecker, C; Steinmann, P; Jumpertz, R; El-Kareh, B
      Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

      IEEE ELECTRON DEVICE LETTERS
    30. Rhallabi, A; Turban, G
      Study of the early stage of SiO2 growth by a TEOS-O-2 plasma mixture usinga three-dimensional Monte Carlo model

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    31. Hwang, MS; Kim, ET; Lee, C
      Effects of DC power on the properties of DLC coatings on the OPC drum

      JOURNAL OF ELECTRONIC MATERIALS
    32. Oh, BH; Bae, JW; Kim, JH; Kim, KJ; Ahn, YS; Lee, NE; Yeom, GY; Yoon, SS; Chae, SK; Ku, MS; Lee, SG; Cho, DH
      Effect of O-2(CO2)/C4F8O gas combinations on global warming gas emission in silicon nitride PECVD plasma cleaning

      SURFACE & COATINGS TECHNOLOGY
    33. Creatore, M; Palumbo, F; d'Agostino, R; Fayet, P
      RF plasma deposition of SiO2-like films: plasma phase diagnostics and gas barrier film properties optimisation

      SURFACE & COATINGS TECHNOLOGY
    34. Schulz, A; Baumgartner, KM; Feichtinger, J; Walker, M; Schumacher, U; Eike, A; Herz, K; Kessler, F
      Surface passivation of silicon with the Plasmodul((R))

      SURFACE & COATINGS TECHNOLOGY
    35. Ma, SL; Li, YH; Xu, KW
      The composite of nitrided steel of H13 and TiN coatings by plasma duplex treatment and the effect of pre-nitriding

      SURFACE & COATINGS TECHNOLOGY
    36. Chou, JC; Wang, YF
      Temperature characteristics of a-Si : H gate ISFET

      MATERIALS CHEMISTRY AND PHYSICS
    37. Cao, YA; Shen, DF; Zhang, XT; Meng, QJ; Ma, Y; Wu, ZY; Bai, YB; Li, TJ; Yao, JN
      Effect of Sn-doping on photocatalytic activity of TiO2 film for degradation of phenol

      CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE
    38. Chatterjee, S; Samanta, SK; Banerjee, HD; Maiti, CK
      Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

      BULLETIN OF MATERIALS SCIENCE
    39. Pal, S; Bose, DN
      Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric

      APPLIED SURFACE SCIENCE
    40. Nakamura, M; Korzec, D; Aoki, T; Engemann, J; Hatanaka, Y
      Characterization of TiOx film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma source

      APPLIED SURFACE SCIENCE
    41. Tong, MS; Dai, GR; Gao, DS
      Surface modification of oxide thin film and its gas-sensing properties

      APPLIED SURFACE SCIENCE
    42. Bose, M; Basa, DK; Bose, DN
      Study of aluminum and gold as the gate electrode material on silicon nitride based MIS devices

      APPLIED SURFACE SCIENCE
    43. da Cruz, NC; Rangel, EC; Tabacknics, MH; Trasferetti, BC; Davanzo, CU
      The effect of ion bombardment on the properties of TiOx films deposited bya modified ion-assisted PECVD technique

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    44. Ujvari, T; Toth, A; Mohai, M; Szepvolgyi, J; Bertoti, I
      Composition and chemical structure characteristics of CNx layers prepared by different plasma assisted techniques

      SOLID STATE IONICS
    45. Hurley, RE; Gamble, HS
      Some current issues in the use and application of ionised plasma for silicon semiconductor processing research

      VACUUM
    46. Kumar, S; Rauthan, CMS; Dixit, PN; Srivatsa, KMK; Khan, MY; Bhattacharyya, R
      Versatile microwave PECVD technique for deposition of DLC and other ordered carbon nanostructures

      VACUUM
    47. Feng, Y; Zhu, M; Liu, F; Liu, J; Han, H; Han, Y
      Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

      THIN SOLID FILMS
    48. Shieh, J; Hon, MH
      Nanostructure and hardness of titanium aluminum nitride prepared by plasmaenhanced chemical vapor deposition

      THIN SOLID FILMS
    49. Tristant, P; Ding, Z; Vinh, QBT; Hidalgo, H; Jauberteau, JL; Desmaison, J; Dong, C
      Microwave plasma enhanced CVD of aluminum oxide films: OES diagnostics andinfluence of the RF bias

      THIN SOLID FILMS
    50. Kawata, K; Sugimura, H; Takai, O
      Characterization of multilayer films of Ti-Al-O-C-N system prepared by pulsed d.c. plasma-enhanced chemical vapor deposition

      THIN SOLID FILMS
    51. Teshima, K; Inoue, Y; Sugimura, H; Takai, O
      Reduction of carbon impurities in silicon oxide films prepared by rf plasma-enhanced CVD

      THIN SOLID FILMS
    52. Takeuchi, Y; Nawata, Y; Ogawa, K; Serizawa, A; Yamauchi, Y; Murata, M
      Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna

      THIN SOLID FILMS
    53. Kawata, K; Sugimura, H; Takai, O
      Characterization of(Ti,Al)N films deposited by pulsed d.c. plasma-enhancedchemical vapor deposition

      THIN SOLID FILMS
    54. Shepsis, LV; Pedrow, PD; Mahalingam, R; Osman, MA
      Modeling and experimental comparison of pulsed plasma deposition of aniline

      THIN SOLID FILMS
    55. Rizzoli, R; Summonte, C; Pia, J; Centurioni, E; Ruani, G; Desalvo, A; Zignani, F
      Ultrathin mu c-Si films deposited by PECVD

      THIN SOLID FILMS
    56. Chung, SJ; Lim, SH; Jang, J
      Field emission from carbon nanotubes grown by layer-by-layer deposition method using plasma chemical vapor deposition

      THIN SOLID FILMS
    57. Martins, R; Aguas, H; Ferreira, I; Silva, V; Cabrita, A; Fortunato, E
      Role of ion bombardment and plasma impedance on the performances presentedby undoped a-Si : H films

      THIN SOLID FILMS
    58. Watanabe, T; Sameshima, T; Nakahata, K; Kamiya, T; Shimizu, I
      Free carrier optical absorption used to analyze the electrical properties of polycrystalline silicon films formed by plasma enhanced chemical vapor deposition

      THIN SOLID FILMS
    59. Fay, JL; Beluch, J; Despax, B; Sarrabayrouse, G
      Feasibility of an isolation by local oxidation of silicon without field implant

      SOLID-STATE ELECTRONICS
    60. Baik, KH; Park, PY; Luo, B; Lee, KP; Shin, JH; Abernathy, CR; Hobson, WS; Pearton, SJ; Ren, F
      Effect of PECVD of SiO2 passivation layers on GaN and InGaP

      SOLID-STATE ELECTRONICS
    61. Ding, SJ; Wang, PF; Zhang, DW; Wang, JT; Lee, WW
      The influence of Ar addition on the structure of an a-SiOCF film prepared by plasma-enhanced chemical vapour deposition

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    62. Kessels, WMM; Severens, RJ; Smets, AHM; Korevaar, BA; Adriaenssens, GJ; Schram, DC; van de Sanden, MCM
      Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma

      JOURNAL OF APPLIED PHYSICS
    63. Wu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS
      Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    64. Lewis, HGP; Casserly, TB; Gleason, KK
      Hot-filament chemical vapor deposition of organosilicon thin films from hexamethylcyclotrisiloxane and octamethylcyclotetrasiloxane

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    65. Phillips, BJ; Steidley, SD; Lau, LD; Rodriguez, RG
      Coherent Raman spectroscopic monitoring of pulsed radio frequency PECVD ofsilicon nitride thin films

      APPLIED SPECTROSCOPY
    66. Jang, SS; Lee, WJ
      Effect of gas composition on TiN thin-film fabrication in N-2/H-2/Ar/TiCl4inductively coupled plasma-enhanced chemical vapor deposition system

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. Lai, YS; Chen, JS
      Characterization of tantalum pentoxide dielectric films grown by low-pressure and plasma-enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    68. He, LN; Hasegawa, S
      Thickness dependence of properties of plasma-deposited amorphous SiO2 films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    69. Chou, JC; Wang, YF; Tsai, HM
      Temperature dependence of surface potential in a-Si : H pH-ion sensitive field effect transistor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    70. Higashi, S; Abe, D; Inoue, S; Shimoda, T
      Low-temperature formation of device-quality SiO2/Si interfaces using electron cyclotron resonance plasma-enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    71. Tsai, HS; Chiu, HC; Chang, SH; Cheng, CC; Lee, CT; Liu, HP
      CO2-laser-assisted plasma-enhanced chemical vapor deposition of silicon dioxide thin film

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. Poirson, JM; Heau, C; Maurin-Perrier, P; Metzgar, K
      Highly flexible coating system

      VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
    73. Horst, SC; Hinkel, DS; Fitz, JL; Turk, H
      High-reflectance dielectric mirrors deposited by plasma-enhanced chemical vapor deposition on GaAs-AlGaAs semiconductor lasers with inductively coupled plasma etched facets

      IEEE PHOTONICS TECHNOLOGY LETTERS
    74. Labelle, CB; Gleason, KK
      Overhang test structure deposition profiles of pulsed plasma fluorocarbon films from hexafluoropropylene oxide, 1,1,2,2-tetrafluoroethane, and difluoromethane

      CHEMICAL VAPOR DEPOSITION
    75. Schmitt, G; Fassbender, F; Luth, H; Schoning, MJ; Schultze, JW; Buss, G
      Passivation and corrosion of microelectrode arrays

      MATERIALS AND CORROSION-WERKSTOFFE UND KORROSION
    76. Santana, G; Morales-Acevedo, A
      Optimization of PECVD SiN : H films for silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    77. Muhl, S; Mahmood, A
      Preparation of CNSix using a RF hollow cathode

      DIAMOND AND RELATED MATERIALS
    78. Sanchez-Lopez, JC; Donnet, C; Fontaine, J; Belin, M; Grill, A; Patel, V; Jahnes, C
      Diamond-like carbon prepared by high density plasma

      DIAMOND AND RELATED MATERIALS
    79. Kalinowski, T; Rittersma, ZM; Benecke, W; Binder, J
      An advanced micromachined fermentation monitoring device

      SENSORS AND ACTUATORS B-CHEMICAL
    80. Lin, SH; Chan, YC; Webb, DP; Lam, YW
      Gap states and stability of rapidly deposited hydrogenated amorphous silicon films

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    81. Ross, C; Herion, J; Carius, R; Wagner, H
      Nucleation and growth of low-temperature fine-crystalline silicon: a scanning probe microscopy and Raman spectroscopy study of the influence of hydrogen and different substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    82. Rosenblad, C; Stangl, J; Muller, E; Bauer, G; von Kanel, H
      Strain relaxation of graded SiGe buffers grown at very high rates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    83. Ryu, HJ; Kim, SH; Hong, SH
      Effect of deposition pressure on bonding nature in hydrogenated amorphous carbon films processed by electron cyclotron resonance plasma enhanced chemical vapor deposition

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    84. Butoi, CI; Mackie, NM; Gamble, LJ; Castner, DG; Barnd, J; Miller, AM; Fisher, ER
      Deposition of highly ordered CF2-rich films using continuous wave and pulsed hexafluoropropylene oxide plasmas

      CHEMISTRY OF MATERIALS
    85. Goullet, A; Vallee, C; Granier, A; Turban, G
      Optical spectroscopic analyses of OH incorporation into SiO2 films deposited from O-2/tetraethoxysilane plasmas

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    86. Santo, LLE; Durrant, SF; Rangel, EC; Galvao, DS; de Moraes, MAB
      Semi-empirical modeling of the optical gap of amorphous hydrogenated nitrogenated carbon films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    87. Barbadillo, L; Hernandez, MJ; Cervera, M; Piqueras, J
      Amorphous SixCyN layers prepared from electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD).

      BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO
    88. Bhat, VK; Bhat, KN; Subrahmanyam, A
      Electrical characterization of ultrathin oxides of silicon grown by N2O plasma assisted oxidation

      JOURNAL OF ELECTRONIC MATERIALS
    89. Blanco, MN; Redondo, E; Martil, I; Gonzalez-Diaz, G
      Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    90. Cheng, YH; Wu, YP; Chen, JG; Qiao, XL; Xie, CS; Tay, BK; Lau, SP; Shi, X
      On the deposition mechanism of a-C : H films by plasma enhanced chemical vapor deposition

      SURFACE & COATINGS TECHNOLOGY
    91. Affinito, JD
      Hybridization of the polymer multi-layer (PML) deposition process

      SURFACE & COATINGS TECHNOLOGY
    92. Zhang, JS; Ren, ZX; Liang, RQ; Sui, YF; Liu, W
      Planar optical waveguide thin films grown by microwave ECR PECVD

      SURFACE & COATINGS TECHNOLOGY
    93. Fu, Y; Yan, B; Loh, NL
      Effects of pre-treatments and interlayers on the nucleation and growth of diamond coatings on titanium substrates

      SURFACE & COATINGS TECHNOLOGY
    94. Bontempi, E; Depero, LE; Sangaletti, L; Giorgis, F; Pirri, CF
      Growth process analysis of a-Si1-xNx : H films probed by X-ray reflectivity

      MATERIALS CHEMISTRY AND PHYSICS
    95. Chou, JC; Hsiao, CN
      Drift behavior of ISFETs with a-Si : H-SiO2 gate insulator

      MATERIALS CHEMISTRY AND PHYSICS
    96. Kitagawa, T; Kondo, M; Matsuda, A
      Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition

      APPLIED SURFACE SCIENCE
    97. Bose, M; Basa, DK; Bose, DN
      Study of nitrous oxide plasma oxidation of silicon nitride thin films

      APPLIED SURFACE SCIENCE
    98. Brenot, R; Drevillon, B; Bulkin, P; Roca i Cabarrocas, P; Vanderhaghen, R
      Process monitoring of semiconductor thin films and interfaces by spectroellipsometry

      APPLIED SURFACE SCIENCE
    99. Uhlig, M; Bertz, A; Rennau, M; Schulz, SE; Werner, T; Gessner, T
      Electrical and adhesion properties of plasma-polymerised ultra-low k dielectric films with high thermal stability

      MICROELECTRONIC ENGINEERING
    100. Loboda, MJ
      New solutions for intermetal dielectrics using trimethylsilane-based PECVDprocesses

      MICROELECTRONIC ENGINEERING


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 08/08/20 alle ore 09:28:18