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La ricerca find articoli where soggetti phrase all words 'OHMIC CONTACTS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 405 riferimenti
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    1. Mello, RMQ; Hummelgen, IA
      Ohmic contacts between sulfonated polyaniline and metals

      JOURNAL OF SOLID STATE ELECTROCHEMISTRY
    2. Johnson, CM; Wright, NG; Uren, MJ; Hilton, KP; Rahimo, M; Hinchley, DA; Knights, AP; Morrison, DJ; Horsfall, AB; Ortolland, S; O'Neill, AG
      Recent progress and current issues in SiC semiconductor devices for power applications

      IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS
    3. Osinski, M; Smagley, VA; Smolyakov, GA; Eliseev, PG
      Design of InGaN-GaN-AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    4. Strassburg, M; Schulz, O; Pohl, UW; Bimberg, D; Itoh, S; Nakano, K; Ishibashi, A; Klude, M; Hommel, D
      A novel approach for improved green-emitting II-VI lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    5. Huang, M; Xie, F; Yan, X; Chang, YA
      Vacancy concentrations in the B2 intermetallic phase PdIn at 900 degrees C

      INTERMETALLICS
    6. Machac, P; Kanta, A; Perina, V
      The influence of surface cleaning on the stability of Pd/GaAs contacts

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    7. Du, J; Lam, SKH; Tilbrook, DL
      Metallization and interconnection of HTS YBCO thin film devices and circuits

      SUPERCONDUCTOR SCIENCE & TECHNOLOGY
    8. Tjong, SC; Ho, HP; Lee, ST
      Development of single- and multi-layered metallic films on diamond by ion beam-assisted deposition

      DIAMOND AND RELATED MATERIALS
    9. Maier, F; Riedel, M; Ristein, J; Ley, L
      Spectroscopic investigations of diamond/bydrogen/metal and diamond/metal interfaces

      DIAMOND AND RELATED MATERIALS
    10. Hashizume, T; Nakasaki, R; Ootomo, S; Oyama, S; Hasegawa, H
      Surface characterization of GaN and AlGaN layers grown by MOVPE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    11. Vassilevski, K; Zekentes, K; Tsagaraki, K; Constantinidis, G; Nikitina, I
      Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    12. Jan, JC; Asokan, K; Chiou, JW; Pong, WF; Tseng, PK; Chen, LC; Chen, FR; Lee, JF; Wu, JS; Lin, HJ; Chen, CT
      X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts top-GaN

      JOURNAL OF SYNCHROTRON RADIATION
    13. Ahouassa, P; Boussey, J; Bouthinon, M; Vilcot, A
      Impact of the contact nature on the microwave behavior of optically controlled passive components

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    14. Youn, CJ; Han, MS
      Comparison of Au/Cu/Al/Ti and Au/Cu/Al/Ti/Si multilayer contacts to an AlGaN/GaN heterostructure

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    15. Shashkin, V; Rushworth, S; Danil'tsev, V; Murel, A; Drozdov, Y; Gusev, S; Khrykin, O; Vostokovi, N
      Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source

      JOURNAL OF ELECTRONIC MATERIALS
    16. Kim, DW; Bae, JC; Kim, WJ; Baik, HK; Kim, CY; Kim, W; Choi, YH; Kim, CK; Yoo, TK; Hong, CH; Lee, SM
      Development of Al-free ohmic contact to n-GaN

      JOURNAL OF ELECTRONIC MATERIALS
    17. Lin, YJ; Lee, HY; Hwang, FT; Lee, CT
      Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

      JOURNAL OF ELECTRONIC MATERIALS
    18. Kim, JK; Kim, KJ; Kim, B; Kim, JN; Kwak, JS; Park, YJ; Lee, JL
      Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN

      JOURNAL OF ELECTRONIC MATERIALS
    19. Kim, JK; Kim, CC; Cho, TS; Je, JH; Kwak, JS; Park, YJ; Lee, JL
      Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN

      JOURNAL OF ELECTRONIC MATERIALS
    20. Schweitz, KO; Mohney, SE
      Phase equilibria in transition metal Al-Ga-N systems and thermal stabilityof contacts to AlGaN

      JOURNAL OF ELECTRONIC MATERIALS
    21. Saddow, SE; Schattner, TE; Brown, J; Grazulis, L; Mahalingam, K; Landis, G; Bertke, R; Mitchel, WC
      Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

      JOURNAL OF ELECTRONIC MATERIALS
    22. Kim, HK; Seong, TY; Lee, CR
      Thermally stable Nb and Nb/Au ohmic contacts to p-GaN

      JOURNAL OF ELECTRONIC MATERIALS
    23. Bright, AN; Tricker, DM; Humphreys, CJ; Davies, R
      A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN

      JOURNAL OF ELECTRONIC MATERIALS
    24. Madsen, LD
      Formation of ohmic contacts to alpha-SiC and their impact on devices

      JOURNAL OF ELECTRONIC MATERIALS
    25. Ding, XZ; Tay, BK; Tan, HS; Lau, SP; Cheung, WY; Wong, SP
      Preferential orientation of titanium carbide films deposited by a filteredcathodic vacuum arc technique

      SURFACE & COATINGS TECHNOLOGY
    26. Pidun, M; Karduck, P; Mayer, J; Heime, K; Schineller, B; Walther, T
      Auger depth profile analysis and EFTEM analysis of annealed Ti/Al-contactson Si-doped GaN

      APPLIED SURFACE SCIENCE
    27. Platow, W; Wood, DK; Tracy, KM; Burnette, JE; Nemanich, RJ; Sayers, DE
      Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001) - art. no. 115312

      PHYSICAL REVIEW B
    28. Nakwaski, W; Mackowiak, P
      Crucial structure elements of possible nitride vertical-cavity surface-emitting lasers

      OPTICA APPLICATA
    29. Pelto, CM; Chang, YA; Chen, Y; Williams, RS
      Issues concerning the preparation of ohmic contacts to n-GaN

      SOLID-STATE ELECTRONICS
    30. Weimar, A; Lell, A; Bruderl, G; Bader, S; Harle, V
      Investigation of low-resistance metal contacts on p-type GaN using the linear and circular transmission line method

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    31. Tjong, SC; Ho, HP; Lee, ST
      The interdiffusion of Sn from AuSn solder with the barrier metal depositedon diamond

      MATERIALS RESEARCH BULLETIN
    32. Kim, TW; Lee, DU; Jung, M; Lee, JH; Kim, HJ; Choo, DC; Kim, JY; Yoon, YS
      Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    33. Ahlskog, M; Hakonen, P; Paalanen, M; Roschier, L; Tarkiainen, R
      Multiwalled carbon nanotubes as building blocks in nanoelectronics

      JOURNAL OF LOW TEMPERATURE PHYSICS
    34. Mistele, D; Fedler, F; Klausing, H; Rotter, T; Stemmer, J; Semchinova, OK; Aderhold, J
      Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

      JOURNAL OF CRYSTAL GROWTH
    35. Kent, DG; Overberg, ME; Pearton, SJ
      Co-implantation of Be+O and Mg+O into GaN

      JOURNAL OF APPLIED PHYSICS
    36. Guo, X; Schubert, EF
      Current crowding in GaN/InGaN light emitting diodes on insulating substrates

      JOURNAL OF APPLIED PHYSICS
    37. Chor, EF; Zhang, D; Gong, H; Chen, GL; Liew, TYF
      Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN

      JOURNAL OF APPLIED PHYSICS
    38. Kim, H; Kim, DJ; Park, SJ; Hwang, H
      Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes

      JOURNAL OF APPLIED PHYSICS
    39. Islam, MS; McNally, PJ
      Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au Ohmic contacts for the fabrication of GaAs MESFETs

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    40. Egawa, T; Zhao, GY; Ishikawa, H; Umeno, M; Jimbo, T
      Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    41. Li, T; Lambert, DJH; Wong, MM; Collins, CJ; Yang, B; Beck, AL; Chowdhury, U; Dupuis, RD; Campbell, JC
      Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    42. Chang, SJ; Chen, WR; Su, YK; Chen, JF; Lan, WH; Chiang, CI; Lin, WJ; Cherng, YT; Liu, CH
      Au/AuBe/Cr contact to p-ZnTe

      ELECTRONICS LETTERS
    43. Kwak, JS; Lee, KY; Han, JY; Cho, J; Chae, S; Nam, OH; Park, Y
      Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate

      APPLIED PHYSICS LETTERS
    44. Lee, CT; Lin, YJ; Liu, DS
      Schottky barrier height and surface state density of Ni/Au contacts to (NH4)(2)S-x-treated n-type GaN

      APPLIED PHYSICS LETTERS
    45. Lee, JL; Kim, JK; Weber, MH; Lynn, KG
      Positron annihilation study of Pd contacts on impurity-doped GaN

      APPLIED PHYSICS LETTERS
    46. Jan, JC; Asokan, K; Chiou, JW; Pong, WF; Tseng, PK; Tsai, MH; Chang, YK; Chen, YY; Lee, JF; Wu, JS; Lin, HJ; Chen, CT; Chen, LC; Chen, FR; Ho, JK
      Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy

      APPLIED PHYSICS LETTERS
    47. Huh, C; Kim, SW; Kim, HS; Kim, HM; Hwang, H; Park, SJ
      Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes

      APPLIED PHYSICS LETTERS
    48. Tanuma, N; Yasukawa, S; Yokokura, S; Hashiguchi, S; Sikula, J; Matsui, T; Tacano, M
      Electron cyclotron resonance plasma etching of n-SiC and evaluation of Ni/n-SiC contacts by current noise measurements

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    49. Ferrini, R; Guizzetti, G; Patrini, R; Nava, F; Vanni, P; Lanzieri, C
      Influence of acceptor impurities on semi-insulating GaAs particle detectors

      EUROPEAN PHYSICAL JOURNAL B
    50. Faurie, JP; Tournie, E
      ZnSe-based heterostructures for blue-green lasers

      COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
    51. Kim, MH; Lee, SN; Huh, C; Park, SY; Han, JY; Seo, JM; Park, SJ
      Interfacial reaction and Fermi level movement induced by sequentially deposited metals on GaN: Au/Ni/GaN

      PHYSICAL REVIEW B
    52. Kim, KS; Oh, CS; Han, MS; Kim, CS; Yang, GM; Yang, JW; Hong, CH; Youn, CJ; Lim, KY; Lee, HJ
      Co-doping characteristics of Si and Zn with Mg in P-type GaN

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    53. Kaminska, E; Piotrowska, A; Barcz, A; Jasinski, J; Zielinski, M; Golaszewska, K; Davis, RF; Goldys, E; Tomsia, K
      Zirconium mediated hydrogen outdiffusion from p-GaN

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    54. Park, MR; Anderson, WA; Park, SJ
      Improved low resistance contacts of Ni/Au and Pd/Au to p-type GaN using a cryogenic treatment

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    55. Cao, XA; Pearton, SJ; Ren, F
      Advanced processing of GaN for electronic devices

      CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
    56. Wang, YY; Zhen, CM; Gong, HX; Yan, ZJ; Wang, YF; Liu, XQ; Yang, YH; He, SH
      Measurement of the specific contact resistance of Au/Ti/p-diamond using transmission line model

      ACTA PHYSICA SINICA
    57. Okuyama, H
      Review of II-VI green laser diodes

      IEICE TRANSACTIONS ON ELECTRONICS
    58. Halaoui, LI; Wells, RL; Coury, LA
      STM and TS study of InAs quantum dots immobilized on Au and Pt surfaces

      CHEMISTRY OF MATERIALS
    59. Kim, MJ; Carpenter, RW; Cox, MJ; Xu, J
      Controlled planar interface synthesis by ultrahigh vacuum diffusion bonding/deposition

      JOURNAL OF MATERIALS RESEARCH
    60. Liu, B; Ahonen, MH; Holloway, PH
      Increase of electrical conductivity in p-GaN by immersion in H2O2 solution

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    61. Staudigel, J; Stossel, M; Steuber, F; Blassing, J; Simmerer, J
      Activation energies in organic light emitting diodes comprising ohmic contacts both for electron and hole injection

      SYNTHETIC METALS
    62. Ressel, P; Hao, PH; Park, MH; Yang, ZC; Wang, LC; Osterle, W; Kurpas, P; Richter, E; Kuphal, E; Hartnagel, HL
      Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties

      JOURNAL OF ELECTRONIC MATERIALS
    63. Janes, DB; Lee, T; Liu, J; Batistuta, M; Chen, NP; Walsh, BL; Andres, RP; Chen, EH; Melloch, MR; Woodall, JM; Reifenberger, R
      Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

      JOURNAL OF ELECTRONIC MATERIALS
    64. Boudart, B; Trassaert, S; Wallart, X; Pesant, JC; Yaradou, O; Theron, D; Crosnier, Y; Lahreche, H; Omnes, F
      Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

      JOURNAL OF ELECTRONIC MATERIALS
    65. Hibbard, DL; Chuang, RW; Zhao, YS; Jensen, CL; Lee, HP; Dong, ZJ; Shih, R; Bremser, M
      Thermally induced variation in barrier height and ideality factor of Ni/Aucontacts to p-GaN

      JOURNAL OF ELECTRONIC MATERIALS
    66. Lundberg, N; Ostling, M; Zetterling, CM; Tagtstrom, P; Jansson, U
      CVD-based tungsten carbide Schottky contacts to 6H-SiC for very high-temperature operation

      JOURNAL OF ELECTRONIC MATERIALS
    67. Olowolafe, JO; Liu, J; Gregory, RB
      Effect of Si or Al interface layers on the properties of Ta and Mo contacts to p-type SiC

      JOURNAL OF ELECTRONIC MATERIALS
    68. Nishizawa, J
      Stoichiometry control and point defects in compound semiconductors

      MATERIALS CHEMISTRY AND PHYSICS
    69. Pal, S; Sugino, T
      Fabrication and characterization of metal/GaN contacts

      APPLIED SURFACE SCIENCE
    70. Baldini, R; Vanni, P; Nava, F; Canali, C; Lanzieri, C
      Influence of substrate on the performances of semi-insulating GaAs detectors

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    71. Machac, P; Myslik, V; Nahlik, J
      The thermal stability of laser annealed contacts based on palladium

      MICROELECTRONIC ENGINEERING
    72. Tsuji, K; Wagatsuma, K; Oku, T
      Glancing-incidence and glancing-takeoff x-ray fluorescence analysis of Ni-GaAs interface reactions

      X-RAY SPECTROMETRY
    73. Vassilevski, K; Zekentes, K; Constantinidis, G; Strel'chuk, A
      Fabrication and electrical characterization of 4H-SiC p(+)-n-n(+) diodes with low differential resistance

      SOLID-STATE ELECTRONICS
    74. Lee, SK; Zetterling, CM; Ostling, M; Palmquist, JP; Hogberg, H; Jansson, U
      Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide

      SOLID-STATE ELECTRONICS
    75. Yousaf, M; Sands, D; Scott, CG
      The formation of stable ohmic contacts to MBE grown CdTe layers

      SOLID-STATE ELECTRONICS
    76. Chow, TP; Khemka, V; Fedison, J; Ramungul, N; Matocha, K; Tang, Y; Gutmann, RJ
      SiC and GaN bipolar power devices

      SOLID-STATE ELECTRONICS
    77. Morrison, DJ; Wright, NG; Horsfall, AB; Johnson, CM; O'Neill, AG; Knights, AP; Hilton, KP; Uren, MJ
      Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation

      SOLID-STATE ELECTRONICS
    78. Cheung, R; Hay, J; van der Drift, E; Gao, W
      Improvement of contact resistances on plasma-exposed silicon carbide

      SOLID-STATE ELECTRONICS
    79. Lee, CT; Huang, JH; Tsai, CD
      Nonalloyed GaAs metal-semiconductor field effect transistor

      SOLID-STATE ELECTRONICS
    80. Sargent, EH
      Semiconductor lasers for planar integrated optoelectronics

      SOLID-STATE ELECTRONICS
    81. Bader, S; Hahn, B; Lugauer, HJ; Lell, A; Weimar, A; Bruderl, G; Baur, J; Eisert, D; Scheubeck, M; Heppel, S; Hangleiter, A; Harle, V
      First European GaN-based violet laser diode

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    82. Makimoto, T; Kumakura, K; Kobayashi, N
      Reduced damage of electron cyclotron resonance etching by In doping into p-GaN

      JOURNAL OF CRYSTAL GROWTH
    83. Lambert, DJH; Huang, JJ; Shelton, BS; Wong, MM; Chowdhury, U; Zhu, TG; Kwon, HK; Liliental-Weber, Z; Benarama, M; Feng, M; Dupuis, RD
      The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganicchemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    84. Cho, MW; Hong, SK; Chang, JH; Saeki, S; Nakajima, M; Yao, T
      MBE grown BeTe and ZnBeTe films as a new p-contact layer of ZnSe-based II-VI lasers

      JOURNAL OF CRYSTAL GROWTH
    85. DeLucca, JM; Mohney, SE; Auret, FD; Goodman, SA
      Pt Schottky contacts to n-GaN formed by electrodeposition and physical vapor deposition

      JOURNAL OF APPLIED PHYSICS
    86. Zeitouny, A; Eizenberg, M; Pearton, SJ; Ren, F
      Contact resistivity and transport mechanisms in W contacts to p- and n-GaN

      JOURNAL OF APPLIED PHYSICS
    87. Huh, C; Kim, HS; Kim, SW; Lee, JM; Kim, DJ; Lee, IH; Park, SJ
      InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

      JOURNAL OF APPLIED PHYSICS
    88. Lee, JM; Chang, KM; Kim, SW; Huh, C; Lee, IH; Park, SJ
      Dry etch damage in n-type GaN and its recovery by treatment with an N-2 plasma

      JOURNAL OF APPLIED PHYSICS
    89. Lee, SK; Zetterling, CM; Ostling, M
      Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide

      JOURNAL OF APPLIED PHYSICS
    90. Heera, V; Reuther, H; Stoemenos, J; Pecz, B
      Phase formation due to high dose aluminum implantation into silicon carbide

      JOURNAL OF APPLIED PHYSICS
    91. Shelton, BS; Huang, JJ; Lambert, DJH; Zhu, TG; Wong, MM; Eiting, CJ; Kwon, HK; Feng, M; Dupuis, RD
      AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

      ELECTRONICS LETTERS
    92. Kim, KS; Han, MS; Yang, GM; Youn, CJ; Lee, HJ; Cho, HK; Lee, JY
      Codoping characteristics of Zn with Mg in GaN

      APPLIED PHYSICS LETTERS
    93. Zhao, ZM; Jiang, RL; Chen, P; Li, WP; Xi, DJ; Xie, SY; Shen, B; Zhang, R; Zheng, YD
      Aluminum and GaN contacts on Si(111) and sapphire

      APPLIED PHYSICS LETTERS
    94. Kim, SW; Lee, JM; Huh, C; Park, NM; Kim, HS; Lee, IH; Park, SJ
      Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment

      APPLIED PHYSICS LETTERS
    95. Monier, C; Pearton, SJ; Chang, PC; Baca, AG; Ren, F
      Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

      APPLIED PHYSICS LETTERS
    96. Lin, CF; Cheng, HC; Chi, GC; Bu, CJ; Feng, MS
      Improved contact performance of GaN film using Si diffusion

      APPLIED PHYSICS LETTERS
    97. Chung, SH; Lachab, M; Wang, T; Lacroix, Y; Basak, D; Fareed, Q; Kawakami, Y; Nishino, K; Sakai, S
      Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    98. Kang, TW; Chi, CS; Park, SH; Kim, TW
      Effects of thermal annealing on the Au/Ni and the Au/Ni/Si/Ni contact properties of p-type GaN epilayers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    99. Ohno, T
      Recent progress in SiC-based device processing

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    100. Koide, Y; Murakami, M
      Ohmic contacts to p-ZnSe and p-GaN wide-gap semiconductors

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS


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Documento generato il 04/06/20 alle ore 07:26:55