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Possible dissociative adsorption of CH3OH and CH3NH2 on Si(100)-2 x 1 surface
JOURNAL OF PHYSICAL CHEMISTRY B
Design and applications of environmental cell transmission electron microscope for in situ observations of gas-solid reactions
MICROSCOPY AND MICROANALYSIS
Internal nitridation behavior during long-term creep in a nickel-base superalloy
SCRIPTA MATERIALIA
Pressureless infiltration of Al-Mg based alloys into Al2O3 preforms: mechanisms and phenomenology
ACTA MATERIALIA
Characterization of damage in InP dry etched using nitrogen containing chemistries
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Edge transistor elimination in oxide trench isolated N-channel metal-oxide-semiconductor field effect transistors
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Synthesis and ceramic conversion of polysiloxazane to silicon oxynitride
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Silicon nitride/SiAlON ceramics - A review
INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES
C-V, DLTS and conductance transient characterization of SiNx : H/InP interface improved by N-2 remote plasma cleaning of the InP surface
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Ordered mesoporous silicon oxynitrides
ADVANCED MATERIALS
AFM and XPS studies of a homoepitaxial diamond (001) surface nitrided using 500-eV N-2(+) ion beam
DIAMOND AND RELATED MATERIALS
Structural changes induced by fast nitrogen ions in GaAs single crystals
JOURNAL OF ALLOYS AND COMPOUNDS
High temperature-high pressure nitridation of beta-Ti63Nb37 by means of the chemical oven technique
JOURNAL OF ALLOYS AND COMPOUNDS
Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridation
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Ultra high vacuum-based in situ characterization of compound semiconductorsurfaces by a contactless capacitance-voltage technique
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Formation and compensation of internal stresses during internal nitridation of nickel-base alloys
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Heat and mass transfer during in-flight nitridation of molybdenum disilicide powder in an induction plasma reactor
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Effect of Y2O3 addition on synthesis of AIN powder by carbothermal reduction-nitridation of Al2O3
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion
IEEE ELECTRON DEVICE LETTERS
The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 mu m CMOS technology and beyond
IEEE ELECTRON DEVICE LETTERS
High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies
IEEE ELECTRON DEVICE LETTERS
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
IEEE ELECTRON DEVICE LETTERS
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
IEEE ELECTRON DEVICE LETTERS
Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Nanometer-scale solute segregation at heterophase interfaces and microstructural evolution of molybdenum nitride precipitates
ULTRAMICROSCOPY
Plasma assisted nitriding of Inconel 690
SURFACE & COATINGS TECHNOLOGY
In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy
APPLIED SURFACE SCIENCE
Structure and optical properties of (001)GaAs surfaces nitrided in plasma-assisted NH3 gas
APPLIED SURFACE SCIENCE
Characterization of the surface layer of GaAs nitrided by high-density plasma
APPLIED SURFACE SCIENCE
Ion-induced nitridation of GaAs(100) surface
APPLIED SURFACE SCIENCE
Structural stability of ultrathin silicon oxynitride film improved by incorporated nitrogen
APPLIED SURFACE SCIENCE
Adsorption and reaction of NH3 on Ti/Si(100)
APPLIED SURFACE SCIENCE
HREELS study of electron irradiation effects on ammonia adsorbed on the Ge(100) surface
APPLIED SURFACE SCIENCE
Ion microscope investigations of non-uniform surfaces of thin SiO2 films produced by high-temperature nitridation experiments
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Low energy nitrogen implantation into Si and SiO2/Si
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Plasma nitridation of very thin gate dielectrics
MICROELECTRONIC ENGINEERING
Interface properties of annealed and nitrided HTO layers
MICROELECTRONIC ENGINEERING
Effect of ammonia plasma pretreatment on the plasma enhanced chemical vapor deposited silicon nitride films
MATERIALS LETTERS
Preparation of A1N polycrystalline plate from aluminum plate
SOLID STATE IONICS
Direct nitriding of large grains of aluminum with 2 mm size
SOLID STATE IONICS
Ab initio study of the initial growth mechanism of silicon nitride on Si(100)-(2X1) using NH3 - art. no. 205303
PHYSICAL REVIEW B
Surface modification of the Ti-Al alloys at 1000-1200 K
SURFACE AND INTERFACE ANALYSIS
High-temperature nitridation and oxidation of Ti-based alloys
SURFACE AND INTERFACE ANALYSIS
Nitridation of steel using a microwave ECR plasma
VACUUM
Nitridation of InP(100) surface studied by AES and EELS spectroscopies
VACUUM
Surface nitridation processes and non-linear behaviour of the reactive magnetron discharge with titanium target
VACUUM
Surface modification of silicon related materials using a catalytic CVD system for ULSI applications
THIN SOLID FILMS
Nitridation of Si(111)
SURFACE SCIENCE
Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si
SOLID-STATE ELECTRONICS
1/f noise behaviors of NO-nitrided n-MOSFETs
SOLID-STATE ELECTRONICS
Interface properties of N2O-annealed SiC metal oxide semiconductor devices
SOLID-STATE ELECTRONICS
Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers
SOLID-STATE ELECTRONICS
Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes
SOLID-STATE ELECTRONICS
Structure determination of the Si3N4/Si(111)-(8 x 8) surface: A combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations
PHYSICAL REVIEW LETTERS
Improvement of oxidation behavior of a Ti-48Al-2Cr alloy by a nitridation treatment
OXIDATION OF METALS
Influence of the native oxide layer on the silicon surface during initial stages of nitridation
MIKROCHIMICA ACTA
Sepiolite-PAN intercalation used as Si3N4 forming precursor
JOURNAL OF MATERIALS SCIENCE
Growth and device applications of III-nitrides by MBE
JOURNAL OF CRYSTAL GROWTH
Nucleation of hexagonal AlN in nitridized AlAs buffer on (001) GaAs substrate
JOURNAL OF CRYSTAL GROWTH
Flame synthesis of aluminum nitride filler-powder
JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
Growth chemistry and interface characterization of single crystal SiC on modified Si surface
JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
Thermal removal of ammonia from mordenite
JOURNAL OF CATALYSIS
X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface
JOURNAL OF APPLIED PHYSICS
Electrical properties and modeling of ultrathin impurity-doped silicon dioxides
JOURNAL OF APPLIED PHYSICS
Effect of nanometer-scale corrugation on densities of gap states and fixedcharges at the thermally grown SiO2/Si interface
JOURNAL OF APPLIED PHYSICS
Preparation and properties of thin silicon nitride films
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectricsby NH3 nitridation and N2O RTA treatment
IEEE TRANSACTIONS ON ELECTRON DEVICES
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
IEEE TRANSACTIONS ON ELECTRON DEVICES
Growth and characterization of SiC/SiNx/Si structures
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Reactions of silicon dioxide with ammonia molecules: formation and characterization of the SiO2-NH3 complex and the H2NSiOOH molecule
CHEMICAL PHYSICS LETTERS
Evidence for the precursors of nitrided silicon in the early stages of silicon oxynitridation in N-2 : N2O atmosphere
APPLIED PHYSICS LETTERS
Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment
APPLIED PHYSICS LETTERS
Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces
APPLIED PHYSICS LETTERS
Catalytic effects of metals on direct nitridation of silicon
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Morphology and phase stability of nitrogen-partially stabilized zirconia (N-PSZ)
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Characterization of silicon nitride thin films on Si and overlayer growth of Si and Ge
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Phase transition of silicon-nitride monolayer on Si(111) surface observed by scanning tunneling microscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Atomic-scale characterization of nitridation processes on Si(100)-2 x 1 surfaces by radical nitrogen
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Characteristics of tunneling nitride grown by electron cyclotron resonancenitrogen-plasma nitridation and its application to low-voltage electrical erasable-programmable read-only memory
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Analysis of gate disturbance degradation by nitridation of flash tunnel oxide
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Thermal nitridation and oxygen-induced etching reactions: A comparative study on Si(100) and (111) surfaces by scanning tunneling microscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Concentration of electric field near Si dot/thermally-grown SiO2 interface
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Trap concentration dependence on the electrical properties of annealed ultrathin fluorinated silicon oxides
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
The formation of nitridation damage during the growth of GaN on GaAs(001)
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
HF and hydrazine monohydrate solution treatment for suppressing oxidation of ZrN film surface
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Hyperthermal beam for oxidation and nitridation produced by laser evaporation of mixed O-3/N2O cryogenic film
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Field electron emission from silicon nanoprotrusions
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Temperature dependence of TaSiN thin film resistivity from room temperature to 900 degrees C
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Suppression of plasma charging damage in sub-micron metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxynitride by two-step nitridation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Identification of the basic sites on nitrided mixed galloaluminophosphates"AlGaPON" catalysts used for the Knoevenagel condensation between benzaldehyde and malononitrile
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Effects of low-thermal-budget treatments on the porous Si material properties
JOURNAL OF POROUS MATERIALS
Atomic level modeling of boron diffusion through silicon oxide before and after plasma nitridation
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Microstructure and physical properties of GaN films on sapphire substrates
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology
MICRON
Internal oxidation processes under non-ideal conditions (Reprinted from proceedings of High-Temperature Corrosion and Protection 2000)
MATERIALS AT HIGH TEMPERATURES
The development of aligned precipitates during internal carbonitridation of Fe-Ni-Cr alloys
MATERIALS AT HIGH TEMPERATURES
Synthesis of Si3N4-TiN-SiC composites by combustion reaction under high nitrogen pressures
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Synthesis of aluminum nitride sintered bodies using the direct nitridationof Al compacts
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY