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La ricerca find articoli where soggetti phrase all words 'NITRIDATION' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 531 riferimenti
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    1. Kato, T; Kang, SY; Xu, X; Yamabe, T
      Possible dissociative adsorption of CH3OH and CH3NH2 on Si(100)-2 x 1 surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. Sharma, R
      Design and applications of environmental cell transmission electron microscope for in situ observations of gas-solid reactions

      MICROSCOPY AND MICROANALYSIS
    3. Dong, JX; Sawada, K; Yokokawa, K; Abe, F
      Internal nitridation behavior during long-term creep in a nickel-base superalloy

      SCRIPTA MATERIALIA
    4. Rao, BS; Jayaram, V
      Pressureless infiltration of Al-Mg based alloys into Al2O3 preforms: mechanisms and phenomenology

      ACTA MATERIALIA
    5. Carlstrom, CF; Anand, S
      Characterization of damage in InP dry etched using nitrogen containing chemistries

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    6. Ahmed, SS; Denton, JP; Neudeck, GW
      Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Yang, JN; Denton, JP; Neudeck, GW
      Edge transistor elimination in oxide trench isolated N-channel metal-oxide-semiconductor field effect transistors

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    8. Redondo, E; Martil, I; Gonzalez-Diaz, G; Castan, H; Duenas, S
      Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    9. Zhang, JB; Lei, TQ; Wen, GW; Zhou, Y
      Synthesis and ceramic conversion of polysiloxazane to silicon oxynitride

      JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
    10. Raju, CB; Verma, S; Sahu, MN; Jain, PK; Choudary, S
      Silicon nitride/SiAlON ceramics - A review

      INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES
    11. Castan, H; Duenas, S; Barbolla, J; Redondo, E; Martil, I; Gonzalez-Diaz, G
      C-V, DLTS and conductance transient characterization of SiNx : H/InP interface improved by N-2 remote plasma cleaning of the InP surface

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    12. El Haskouri, J; Cabrera, S; Sapina, F; Latorre, J; Guillem, C; Beltran-Porter, A; Beltran-Porter, D; Marcos, MD; Amoros, P
      Ordered mesoporous silicon oxynitrides

      ADVANCED MATERIALS
    13. Kusunoki, I; Igari, Y; Ishidzuka, S; Takami, T; Takaoka, T; Nishitani-Gamo, M; Ando, T
      AFM and XPS studies of a homoepitaxial diamond (001) surface nitrided using 500-eV N-2(+) ion beam

      DIAMOND AND RELATED MATERIALS
    14. Zymierska, D; Auleytner, J; Choinski, J; Perchuc, L; Godwod, K; Domagala, J; Adamczewska, J; Paszkowicz, W; Reginski, K
      Structural changes induced by fast nitrogen ions in GaAs single crystals

      JOURNAL OF ALLOYS AND COMPOUNDS
    15. Ferretti, M; Martinelli, A
      High temperature-high pressure nitridation of beta-Ti63Nb37 by means of the chemical oven technique

      JOURNAL OF ALLOYS AND COMPOUNDS
    16. Deiss, JL; Hirlimann, C; Loison, JL; Robino, M; Versini, G
      Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    17. Hasegawa, H; Takahashi, H; Yoshida, T; Sakai, T
      Ultra high vacuum-based in situ characterization of compound semiconductorsurfaces by a contactless capacitance-voltage technique

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    18. Chang, SY; Krupp, U; Christ, HJ
      Formation and compensation of internal stresses during internal nitridation of nickel-base alloys

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    19. Soucy, G; Rahmane, M; Fan, XB; Ishigaki, T
      Heat and mass transfer during in-flight nitridation of molybdenum disilicide powder in an induction plasma reactor

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    20. Ide, T; Komeya, K; Tatami, J; Meguro, T; Naito, M; Hotta, T
      Effect of Y2O3 addition on synthesis of AIN powder by carbothermal reduction-nitridation of Al2O3

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    21. Chen, CH; Fang, YK; Yang, CW; Ting, SF; Tsair, YS; Yu, MC; Hou, TH; Wang, MF; Chen, SC; Yu, CH; Liang, MS
      Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion

      IEEE ELECTRON DEVICE LETTERS
    22. Ting, SF; Fang, YK; Chen, CH; Yang, CW; Hsieh, WT; Ho, JJ; Yu, MC; Jang, SM; Yu, CH; Liang, MS; Chen, S; Shih, R
      The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 mu m CMOS technology and beyond

      IEEE ELECTRON DEVICE LETTERS
    23. Chen, CH; Fang, YK; Yang, CW; Ting, SF; Tsair, YS; Wang, MF; Lin, YM; Yu, MC; Chen, SC; Yu, CH; Liang, MS
      High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

      IEEE ELECTRON DEVICE LETTERS
    24. Chung, GY; Tin, CC; Williams, JR; McDonald, K; Chanana, RK; Weller, RA; Pantelides, ST; Feldman, LC; Holland, OW; Das, MK; Palmour, JW
      Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

      IEEE ELECTRON DEVICE LETTERS
    25. Pan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS
      High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

      IEEE ELECTRON DEVICE LETTERS
    26. Raveh, A; Brewer, J; Irene, EA
      Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    27. Isheim, D; Siem, EJ; Seidman, DN
      Nanometer-scale solute segregation at heterophase interfaces and microstructural evolution of molybdenum nitride precipitates

      ULTRAMICROSCOPY
    28. Leroy, C; Czerwiec, T; Gabet, C; Belmonte, T; Michel, H
      Plasma assisted nitriding of Inconel 690

      SURFACE & COATINGS TECHNOLOGY
    29. Hecht, JD; Frost, F; Chasse, T; Hirsch, D; Neumann, H; Schindler, A; Bigl, F
      In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

      APPLIED SURFACE SCIENCE
    30. Shimaoka, G; Aoki, T; Nakanishi, Y; Hatanaka, Y; Udagawa, T
      Structure and optical properties of (001)GaAs surfaces nitrided in plasma-assisted NH3 gas

      APPLIED SURFACE SCIENCE
    31. Yasui, K; Tsukada, Y; Arayama, T; Okutani, S; Akahane, T
      Characterization of the surface layer of GaAs nitrided by high-density plasma

      APPLIED SURFACE SCIENCE
    32. Li, YG; Wee, ATS; Huan, CHA; Zheng, JC
      Ion-induced nitridation of GaAs(100) surface

      APPLIED SURFACE SCIENCE
    33. Suzuki, M; Saito, Y
      Structural stability of ultrathin silicon oxynitride film improved by incorporated nitrogen

      APPLIED SURFACE SCIENCE
    34. Siew, HL; Qiao, MH; Chew, CH; Mok, KF; Chan, L; Xu, GQ
      Adsorption and reaction of NH3 on Ti/Si(100)

      APPLIED SURFACE SCIENCE
    35. Sanders, M; Craig, JH
      HREELS study of electron irradiation effects on ammonia adsorbed on the Ge(100) surface

      APPLIED SURFACE SCIENCE
    36. Markwitz, A; Trompetter, WJ; White, GV; Brown, IWM
      Ion microscope investigations of non-uniform surfaces of thin SiO2 films produced by high-temperature nitridation experiments

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    37. Krug, C; Salgado, TDM; Stedile, FC; Baumvol, IJR
      Low energy nitrogen implantation into Si and SiO2/Si

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    38. Al-Shareef, HN; Bersuker, G; Lim, C; Murto, R; Borthakur, S; Brown, GA; Huff, HR
      Plasma nitridation of very thin gate dielectrics

      MICROELECTRONIC ENGINEERING
    39. Polignano, ML; Carpanese, C; Crivelli, B; Giussani, A; Zonca, R; Bersani, A
      Interface properties of annealed and nitrided HTO layers

      MICROELECTRONIC ENGINEERING
    40. Bose, M; Basa, DK; Bose, DN
      Effect of ammonia plasma pretreatment on the plasma enhanced chemical vapor deposited silicon nitride films

      MATERIALS LETTERS
    41. Ito, S; Fujii, T; Ishikawa, K
      Preparation of A1N polycrystalline plate from aluminum plate

      SOLID STATE IONICS
    42. Fujii, T; Yoshida, K; Suzuki, K; Ito, S
      Direct nitriding of large grains of aluminum with 2 mm size

      SOLID STATE IONICS
    43. Widjaja, Y; Musgrave, CB
      Ab initio study of the initial growth mechanism of silicon nitride on Si(100)-(2X1) using NH3 - art. no. 205303

      PHYSICAL REVIEW B
    44. Thongtem, S; Thongtem, T; McNallan, M
      Surface modification of the Ti-Al alloys at 1000-1200 K

      SURFACE AND INTERFACE ANALYSIS
    45. Thongtem, S; Thongtem, T; McNallan, M
      High-temperature nitridation and oxidation of Ti-based alloys

      SURFACE AND INTERFACE ANALYSIS
    46. Naddaf, M; Hullavarad, SS; Bhoraskar, VN; Sainkar, SR; Mandale, AB; Bhoraskar, SV
      Nitridation of steel using a microwave ECR plasma

      VACUUM
    47. Ould-Metidji, Y; Bideux, L; Matolin, V; Gruzza, B; Robert, C
      Nitridation of InP(100) surface studied by AES and EELS spectroscopies

      VACUUM
    48. Luca, D; van der Gon, AWD; Anita, V; Ponjee, MWG; Brongersma, HH; Popa, G
      Surface nitridation processes and non-linear behaviour of the reactive magnetron discharge with titanium target

      VACUUM
    49. Izumi, A
      Surface modification of silicon related materials using a catalytic CVD system for ULSI applications

      THIN SOLID FILMS
    50. Wang, XS; Zhai, G; Yang, J; Wang, L; Hu, Y; Li, Z; Tang, JC; Wang, X; Fung, KK; Cue, N
      Nitridation of Si(111)

      SURFACE SCIENCE
    51. Bera, LK; Senapati, B; Maikap, S; Maiti, CK
      Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si

      SOLID-STATE ELECTRONICS
    52. Xu, JP; Lai, PT; Cheng, YC
      1/f noise behaviors of NO-nitrided n-MOSFETs

      SOLID-STATE ELECTRONICS
    53. Chakraborty, S; Lai, PT; Xu, JP; Chan, CL; Cheng, YC
      Interface properties of N2O-annealed SiC metal oxide semiconductor devices

      SOLID-STATE ELECTRONICS
    54. Ray, SK; Maikap, S; Samanta, SK; Banerjee, SK; Maiti, CK
      Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers

      SOLID-STATE ELECTRONICS
    55. Kent, DG; Lee, KP; Zhang, AP; Luo, B; Overberg, ME; Abernathy, CR; Ren, F; Mackenzie, KD; Pearton, SJ; Nakagawa, Y
      Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes

      SOLID-STATE ELECTRONICS
    56. Ahn, H; Wu, CL; Gwo, S; Wei, CM; Chou, YC
      Structure determination of the Si3N4/Si(111)-(8 x 8) surface: A combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations

      PHYSICAL REVIEW LETTERS
    57. Perez, P; Adeva, P
      Improvement of oxidation behavior of a Ti-48Al-2Cr alloy by a nitridation treatment

      OXIDATION OF METALS
    58. Markwitz, A; White, GV; Trompetter, WJ; Brown, IWM
      Influence of the native oxide layer on the silicon surface during initial stages of nitridation

      MIKROCHIMICA ACTA
    59. Kurt, AO; Davies, TJ
      Sepiolite-PAN intercalation used as Si3N4 forming precursor

      JOURNAL OF MATERIALS SCIENCE
    60. Moustakas, TD; Iliopoulos, E; Sampath, AV; Ng, HM; Doppalapudi, D; Misra, M; Korakakis, D; Singh, R
      Growth and device applications of III-nitrides by MBE

      JOURNAL OF CRYSTAL GROWTH
    61. Wan, L; Duan, XF; Chen, H; Liu, HF; Li, ZQ; Huang, Q; Zhou, JM
      Nucleation of hexagonal AlN in nitridized AlAs buffer on (001) GaAs substrate

      JOURNAL OF CRYSTAL GROWTH
    62. Takao, Y; Sando, M
      Flame synthesis of aluminum nitride filler-powder

      JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
    63. Nahm, KS; Kim, KC; Park, CI; Lim, KY; Yang, YS; Seo, YH
      Growth chemistry and interface characterization of single crystal SiC on modified Si surface

      JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
    64. Jirka, I; Plsek, J; Kotrla, J
      Thermal removal of ammonia from mordenite

      JOURNAL OF CATALYSIS
    65. Akane, T; Sugioka, K; Midorikawa, K; Dubowski, JJ; Aoki, N; Toyoda, K
      X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface

      JOURNAL OF APPLIED PHYSICS
    66. Chang, WJ; Houng, MP; Wang, YH
      Electrical properties and modeling of ultrathin impurity-doped silicon dioxides

      JOURNAL OF APPLIED PHYSICS
    67. Ishikawa, Y; Kosugi, M; Tabe, M
      Effect of nanometer-scale corrugation on densities of gap states and fixedcharges at the thermally grown SiO2/Si interface

      JOURNAL OF APPLIED PHYSICS
    68. Reddy, SV; Reddy, PN
      Preparation and properties of thin silicon nitride films

      INDIAN JOURNAL OF PURE & APPLIED PHYSICS
    69. Pan, TM; Lei, TF; Wen, HC; Chao, TS
      Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectricsby NH3 nitridation and N2O RTA treatment

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    70. Ma, TZ; Campbell, SA; Smith, R; Hoilien, N; He, BY; Gladfelter, WL; Hobbs, C; Buchanan, D; Taylor, C; Gribelyuk, M; Tiner, M; Coppel, M; Lee, JJ
      Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    71. Nahm, KS; Kim, KC; Lim, KY
      Growth and characterization of SiC/SiNx/Si structures

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    72. Zhou, MF; Chen, MH
      Reactions of silicon dioxide with ammonia molecules: formation and characterization of the SiO2-NH3 complex and the H2NSiOOH molecule

      CHEMICAL PHYSICS LETTERS
    73. Cerofolini, GF; Camalleri, M; Galati, C; Lorenti, S; Renna, L; Viscuso, O; Condorelli, GG; Fragala, IL
      Evidence for the precursors of nitrided silicon in the early stages of silicon oxynitridation in N-2 : N2O atmosphere

      APPLIED PHYSICS LETTERS
    74. Haffouz, S; Kirilyuk, V; Hageman, PR; Macht, L; Weyher, JL; Larsen, PK
      Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

      APPLIED PHYSICS LETTERS
    75. Goss, SH; Sun, XL; Young, AP; Brillson, LJ; Look, DC; Molnar, RJ
      Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

      APPLIED PHYSICS LETTERS
    76. Pavarajarn, V; Kimura, S
      Catalytic effects of metals on direct nitridation of silicon

      JOURNAL OF THE AMERICAN CERAMIC SOCIETY
    77. Chung, TJ; Lee, JS; Kim, DY; Kim, GH; Song, H
      Morphology and phase stability of nitrogen-partially stabilized zirconia (N-PSZ)

      JOURNAL OF THE AMERICAN CERAMIC SOCIETY
    78. Wang, XS; Li, ZQ; Lei, W; Hu, YF; Zhai, GJ; Yang, JS; Wang, YQ; Fung, KK; Tang, JC; Wang, X; Cue, N
      Characterization of silicon nitride thin films on Si and overlayer growth of Si and Ge

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    79. Morita, Y; Tokumoto, H
      Phase transition of silicon-nitride monolayer on Si(111) surface observed by scanning tunneling microscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    80. Matsushita, D; Ikeda, H; Sakai, A; Zaima, S; Yasuda, Y
      Atomic-scale characterization of nitridation processes on Si(100)-2 x 1 surfaces by radical nitrogen

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    81. Min, KS; Chung, JY; Lee, K
      Characteristics of tunneling nitride grown by electron cyclotron resonancenitrogen-plasma nitridation and its application to low-voltage electrical erasable-programmable read-only memory

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    82. Arai, M; Hashidzume, T; Nitta, T; Odake, Y; Matsuo, I
      Analysis of gate disturbance degradation by nitridation of flash tunnel oxide

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    83. Ha, JS; Park, KH; Yun, WS; Ko, YJ
      Thermal nitridation and oxygen-induced etching reactions: A comparative study on Si(100) and (111) surfaces by scanning tunneling microscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    84. Ishikawa, Y; Kosugi, M; Tsuchiya, T; Tabe, M
      Concentration of electric field near Si dot/thermally-grown SiO2 interface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    85. Chang, WJ; Houng, MP; Wang, YF
      Trap concentration dependence on the electrical properties of annealed ultrathin fluorinated silicon oxides

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. Zsebok, O; Thordson, JV; Andersson, TG
      The formation of nitridation damage during the growth of GaN on GaAs(001)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    87. Horii, S; Toda, T; Horita, S
      HF and hydrazine monohydrate solution treatment for suppressing oxidation of ZrN film surface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    88. Nishiguchi, T; Morikawa, Y; Miyamoto, M; Nonaka, H; Ichimura, S
      Hyperthermal beam for oxidation and nitridation produced by laser evaporation of mixed O-3/N2O cryogenic film

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    89. Sawada, K; Tabe, M; Ishikawa, Y; Iwatsuki, M; Ishida, M
      Field electron emission from silicon nanoprotrusions

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    90. Oizumi, M; Aoki, K; Fukuda, Y
      Temperature dependence of TaSiN thin film resistivity from room temperature to 900 degrees C

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    91. Tzeng, PJ; Wu, BF; Chang-Liao, KS
      Suppression of plasma charging damage in sub-micron metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxynitride by two-step nitridation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    92. Delsarte, S; Auroux, A; Grange, P
      Identification of the basic sites on nitrided mixed galloaluminophosphates"AlGaPON" catalysts used for the Knoevenagel condensation between benzaldehyde and malononitrile

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    93. Stalmans, L; Poortmans, J; Bender, H; Jin, S; Conard, T; Nijs, J; Debarge, L; Slaoui, A
      Effects of low-thermal-budget treatments on the porous Si material properties

      JOURNAL OF POROUS MATERIALS
    94. Zubkov, V; Aronowitz, S; Sukharev, V
      Atomic level modeling of boron diffusion through silicon oxide before and after plasma nitridation

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    95. Chen, ZH; Zhang, R; Zhu, JM; Shen, B; Zhou, YG; Chen, P; Li, WP; Shi, Y; Gu, SL; Zheng, YD
      Microstructure and physical properties of GaN films on sapphire substrates

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    96. Gerardi, C; Melanotte, M; Crivelli, B; Zonca, R; Alessandri, M
      Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology

      MICRON
    97. Young, DJ
      Internal oxidation processes under non-ideal conditions (Reprinted from proceedings of High-Temperature Corrosion and Protection 2000)

      MATERIALS AT HIGH TEMPERATURES
    98. Ford, SI; Munroe, PR; Young, DJ
      The development of aligned precipitates during internal carbonitridation of Fe-Ni-Cr alloys

      MATERIALS AT HIGH TEMPERATURES
    99. Han, JC; Chen, GQ; Du, SY; Wood, JV
      Synthesis of Si3N4-TiN-SiC composites by combustion reaction under high nitrogen pressures

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    100. Okada, T; Toriyama, M; Kanzaki, S
      Synthesis of aluminum nitride sintered bodies using the direct nitridationof Al compacts

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY


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Documento generato il 16/01/21 alle ore 19:59:41