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La ricerca find articoli where soggetti phrase all words 'MULTIPLE-QUANTUM-WELL' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 148 riferimenti
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    1. Sheu, JK; Chi, GC; Jou, MJ
      Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer

      IEEE PHOTONICS TECHNOLOGY LETTERS
    2. Lu, Y; Li, CY; Zhang, YF; Huang, Q; Fu, PM; Zhang, ZG; Lu, LB; Chen, HZ; Qu, CZ; Tang, JX
      Study of the four-wave mixing diffraction efficiency of longitudinal-fieldmultiple-quantum-well photorefractive device grown at low temperature

      CHINESE PHYSICS
    3. Yang, MJ; Ling, QD; Li, WQ; Wang, Y; Sun, RG; Zheng, QB; Epstein, AJ
      Eu complex-based multiple-quantum-well electroluminescent devices as voltage indicators

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    4. Hung, KM; Tseng, CW; Cheng, HH
      Exciton condensation in semimagnetic CdTe/CdMnTe multiple quantum wells

      PHYSICA B
    5. Cho, HK; Lee, JY; Kim, CS; Yang, GM
      Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions

      JOURNAL OF ELECTRONIC MATERIALS
    6. Gilbreath, GC; Rabinovich, WS; Meehan, TJ; Vilcheck, MJ; Mahon, R; Burris, R; Ferraro, M; Solkolsky, I; Vasquez, JA; Bovais, CS; Cochrell, K; Goins, KC; Barbehenn, R; Katzer, DS; Ikossi-Anastasiou, K; Montes, MJ
      Large-aperture multiple quantum well modulating retroreflector for free-space optical data transfer on unmanned aerial vehicles

      OPTICAL ENGINEERING
    7. Wen, TC; Lee, WI
      Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    8. Kim, TW; Lee, DU; Choo, C; Kim, JH; Jung, M; Kim, MD; Jeong, HD; Yoo, KH; Kim, JY; Lim, HJ
      1.55 mu m wavelength strain-compensated InxGa1-xAs/InyAl1-yAs electroabsorption modulators with high extinction ratio and low polarization-dependent loss

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    9. Lim, J; Shin, M; Kim, J; Kim, JS; Pyun, KE; Hong, SC
      Velocity-mismatching effect on extinction characteristics of traveling wave electroabsorption modulator

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Huang, JS; Pfeiffer, M; Blochwitz, J; Werner, A; Salbeck, J; Liu, SY; Leo, K
      Low operating voltage and high efficiency organic multilayer electroluminescent devices with p-type doped hole injection layer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    11. Liu, Y; Xiao, XR; Zeng, YP
      Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode

      ELECTROCHEMISTRY COMMUNICATIONS
    12. Kato, M; Nakano, Y
      60 nm wavelength range polarization-insensitive 1.55 mu m electroabsorption modulator using tensile-strained pre-biased multiple quantum well

      IEICE TRANSACTIONS ON ELECTRONICS
    13. Cartledge, JC
      Combining self-phase modulation and optimum modulation conditions to improve the performance of 10-Gb/s transmission systems using MQW Mach-Zehnder modulators

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    14. Xie, Z; Huang, J; Feng, J; Liu, S
      Chromaticity-tunable white light emission from organic multiple-quantum-well structure

      OPTICAL AND QUANTUM ELECTRONICS
    15. Jain, F; Cheung, S; Huang, W
      Acceptance of wider oblique angle of incidence in Fabry-Perot optical filter/modulator structures via index compensation in InGaAs-GaAs (980 nm) and InGaAsP-InP (1.55 mu m) multiple quantum well cavities

      INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
    16. Wang, H; Huang, W; Jain, F
      Surface acoustic wave induced birefringence in In0.21Ga0.79As-GaAs multiple quantum wells for optical modulation similar to 1000 nm under normal incidence

      INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
    17. Moumanis, K; Seisyan, RP; Kokhanovskii, SI; Sasin, ME
      Light and heavy hole excitons in absorption and magnetoabsorption spectra of InGaAs/GaAs MQWs

      THIN SOLID FILMS
    18. Ma, CS; Wang, LJ; Liu, SY
      Effects of distance between wells on band structure and characteristics ofInGaAs/InGaAsP strain-compensated multiple quantum well lasers

      SOLID-STATE ELECTRONICS
    19. Ban, DY; Sargent, EH
      Influence of nonuniform carrier distribution on the polarization dependence of modal gain in multiquantum-well lasers and semiconductor optical amplifiers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    20. Huang, MF; Garmire, E; Kuo, YK
      Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: Compression along [110] and tension along [(1)over-bar10]

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    21. Schlenker, D; Miyamoto, T; Chen, ZB; Kawaguchi, M; Kondo, T; Gouardes, E; Gemmer, J; Gemmer, C; Koyama, F; Iga, K
      Inclusion of strain effect in miscibility gap calculations for III-V semiconductors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    22. Kochelap, VA; Bonilla, LL; Velasco, CA
      Dynamical behaviour of photo-excited and voltage biased MQW structures with bistable electro-optical absorption

      JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS
    23. Bartolo, RE; Saini, SS; Ren, T; Zhu, Y; Dagenais, M; Shen, H; Pamulapati, J; Zhou, W; King, O; Johnson, FG
      Polarization-independent waveguide modulators using 1.57-mu m delta-strained InGaAs-InGaAsP quantum wells

      IEEE PHOTONICS TECHNOLOGY LETTERS
    24. Cassidy, DT; Hamp, MJ
      Diffractive optical element used in an external feedback configuration to tune the wavelength of uncoated Fabry-Perot diode lasers

      JOURNAL OF MODERN OPTICS
    25. Araujo, D; Romero, MJ; Morier-Genoud, F; Garcia, R
      Multiple quantum well GaAs/AlGaAs solar cells: transport and recombinationproperties by means of EBIC and cathodoluminescence

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    26. Kibar, O; Van Blerkom, DA; Fan, C; Esener, SC
      Power minimization and technology comparisons for digital free-space optoelectronic interconnections

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    27. Kim, SW; Kang, BS; Sohn, KS
      Optical properties and collective excitations in a HgTe CdTe superlattice

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    28. Mackowiak, P; Nakwaski, W
      Thermal aspects of designing CW-operated nitride VCSELs

      OPTICAL AND QUANTUM ELECTRONICS
    29. Flatte, ME; Grein, CH; Hasenberg, TC; Anson, SA; Jang, DJ; Olesberg, JT; Boggess, TF
      Carrier recombination rates in narrow-gap InAs/Ga1-xInxSb-based superlattices

      PHYSICAL REVIEW B-CONDENSED MATTER
    30. Ma, CS; Liu, SY
      Uniform transverse-electric fundamental wave in a symmetric linear multilayer optical waveguide

      OPTICS LETTERS
    31. Menzel, D; Koschinski, W; Dettmer, K; Schoenes, J
      Photoconductivity of Si/Ge buffers, superlattices, and multiple quantum wells

      THIN SOLID FILMS
    32. She, SX; Zhang, SJ
      Analysis of nonlinear TE waves in a periodic refractive index waveguide with nonlinear cladding

      OPTICS COMMUNICATIONS
    33. Romero, MJ; Gutierrez, M; Sanchez, JJ; Gonzalez, D; Aragon, G; Izpura, I; Garcia, R
      Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAsmultiple quantum well pin photodiodes

      MICROELECTRONICS JOURNAL
    34. Liu, JS; Wang, JS; Hsieh, KY; Lin, HH
      Structural and optical properties of 0.98 mu m InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    35. Kashima, Y; Nozawa, T; Munakata, T
      Metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAsP multiple-quantum-well distributed feedback lasers on InP corrugated substrate

      JOURNAL OF CRYSTAL GROWTH
    36. Mozume, T; Yoshida, H; Neogi, A; Kudo, M
      Near-infrared intersubband absorption in InGaAs AlAsSb grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    37. Anson, SA; Olesberg, JT; Flatte, ME; Hasenberg, TC; Boggess, TF
      Differential gain, differential index, and linewidth enhancement factor for a 4 mu m superlattice laser active layer

      JOURNAL OF APPLIED PHYSICS
    38. Lin, CC; Wu, MC; Shiao, HP; Liu, KS
      High-temperature, low threshold current, and uniform operation 1 x 12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in1.5 mu m

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    39. Beche, B; Porte, H; Goedgebuer, JP; Fontaine, C
      A tunable filter with collinear acoustooptical TE-TM mode conversion in a GaAs-AlAs multiquantum-well waveguide

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    40. Liu, SY; Huang, JS; Xie, ZY; Chen, BJ; Wang, Y; Shen, JC
      Organic electroluminescent devices and their application

      CZECHOSLOVAK JOURNAL OF PHYSICS
    41. Helmy, AS; Murad, SK; Bryce, AC; Aitchison, JS; Marsh, JH; Hicks, SE; Wilkinson, CDW
      Control of silica cap properties by oxygen plasma treatment for single-capselective impurity free vacancy disordering

      APPLIED PHYSICS LETTERS
    42. Mozume, T; Yoshida, H; Neogi, A; Kudo, M
      1.45 mu m intersubband absorption in InGaAs/AlAsSb grown by molecular beamepitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    43. KASHIMA Y; MUNAKATA T
      BROAD-SPECTRUM INGAASP EDGE-EMITTING LIGHT-EMITTING DIODE USING SELECTIVE-AREA METAL-ORGANIC VAPOR-PHASE EPITAXY

      IEEE photonics technology letters
    44. CANOGLU E; TAYEBATI P; HANTZIS C; JEHANNO A; SACKS RN
      HIGH-RESOLUTION SPATIAL LIGHT-MODULATION WITH DISTRIBUTED PHOTOREFRACTIVE DEVICES

      IEEE photonics technology letters
    45. PAN JW; CHEN MH; CHYI JI; SHIH TT
      TEMPERATURE-DEPENDENT CHARACTERISTICS OF 1.3-MU-M ALGAINAS-INP LASERSWITH MULTIQUANTUM BARRIERS AT THE GUIDING LAYERS

      IEEE photonics technology letters
    46. YOO JJ; LEIGHT JE; KIM C; GIARETTA G; YUEN W; WILLNER AE; CHANGHASNAIN CJ
      EXPERIMENTAL DEMONSTRATION OF A MULTIHOP SHUFFLE NETWORK USING WDM MULTIPLE-PLANE OPTICAL INTERCONNECTION WITH VCSEL AND MQW DBR DETECTOR ARRAYS/

      IEEE photonics technology letters
    47. TANAKA T; KAJIMURA T
      FREQUENCY CONTROL OF SELF-SUSTAINED PULSATING LASER-DIODES BY UNIFORMIMPURITY DOPING INTO MULTIPLE-QUANTUM-WELL STRUCTURES

      IEEE photonics technology letters
    48. HERON RJ; LEWIS RA; SKOUGAREVSKY A; STARRETT RP; CLARK RG; HENINI M
      FAR-INFRARED LASER PHOTOCONDUCTIVITY OF N-GAAS MULTIPLE-QUANTUM WELLSIN A PULSED MAGNETIC-FIELD

      Physica. B, Condensed matter
    49. WAKITA K; YOSHINO K; HIRANO A; KONDO S; NOGUCHI Y
      VERY-HIGH-SPEED AND LOW DRIVING-VOLTAGE MODULATOR MODULES FOR A SHORTOPTICAL PULSE GENERATION

      IEICE transactions on electronics
    50. LOUR WS
      HIGH-GAIN AND OSCILLATORY TRANSCONDUCTANCE BY INGAAS INALAS MULTIPLE-QUANTUM-WELL EMITTER BIPOLAR-TRANSISTOR/

      Superlattices and microstructures
    51. YOON SF
      HIGH-FIELD DOMAIN FORMATION IN SELECTIVELY DOPED N-TYPE GAAS ALGAAS MULTIPLE-QUANTUM-WELL STRUCTURES/

      Superlattices and microstructures
    52. HAN MS; KANG TW; LEEM JH; KIM TW
      DIFFUSION MECHANISMS IN INTERMIXED HGTE CDTE SUPERLATTICES/

      Semiconductor science and technology
    53. Jang, DJ; Flatte, ME; Grein, CH; Olesberg, JT; Hasenberg, TC; Boggess, TF
      Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice

      PHYSICAL REVIEW B-CONDENSED MATTER
    54. AN HY; HOU JY; CHEN BJ; SHEN JC; LIU SY
      FABRICATION AND CHARACTERIZATION OF HIGH-QUALITY ORGANIC MULTIPLE-QUANTUM-WELL STRUCTURES

      Thin solid films
    55. Sidiki, TP; Ruhm, A; Ni, WX; Hansson, GV; Torres, CMS
      Photoluminescence and X-ray characterisation of Si/Si1-xGex multiple quantum wells

      JOURNAL OF LUMINESCENCE
    56. BAUMEISTER H; VEUHOFF E; POPP M; HEINECKE H
      GRINSCH GAINASP MQW LASER STRUCTURES GROWN BY MOMBE

      Journal of crystal growth
    57. NAGANO T; NOMURA I; HARAGUCHI M; ARAI M; HATTORI H; SHIMBO H; KIKUCHI A; SHIMOMURA K; KISHINO K
      QUANTUM-CONFINED STARK-EFFECT IN ZNCDSE MGZNCDSE MULTIPLE-QUANTUM WELLS GROWN ON INP SUBSTRATES/

      Journal of crystal growth
    58. Mori, K; Hatakeyama, H; Hamamoto, K; Komatsu, K; Sasaki, T; Matsumoto, T
      Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE

      JOURNAL OF CRYSTAL GROWTH
    59. Biwa, G; Yaguchi, H; Onabe, K; Shiraki, Y
      Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures

      JOURNAL OF CRYSTAL GROWTH
    60. TARABIA M; HONG H; DAVIDOV D; KIRSTEIN S; STEITZ R; NEUMANN R; AVNY Y
      NEUTRON AND X-RAY REFLECTIVITY STUDIES OF SELF-ASSEMBLED HETEROSTRUCTURES BASED ON CONJUGATED POLYMERS

      Journal of applied physics
    61. KAKIMOTO S; WATANABE H
      THRESHOLD CURRENTS OF 1.3-MU-M BULK, 1.55-MU-M BULK, AND 1.55-MU-M MQW DFB P-SUBSTRATE PARTIALLY INVERTED BURIED HETEROSTRUCTURE LASER-DIODES

      IEEE journal of quantum electronics
    62. HAZELL JF; SIMMONS JG; EVANS JD; BLAAUW C
      EFFECT OF VARYING BARRIER HEIGHT ON THE OPERATIONAL CHARACTERISTICS OF 1.3-MU-M STRAINED-LAYER MQW LASERS

      IEEE journal of quantum electronics
    63. BECHE B; PORTE H; GOEDGEBUER JP; FONTAINE C; KHALFALLAH S; LEGROS R; MUNOZYAGUE A
      STRONG BIREFRINGENCE AT 1.55-MU-M OF SINGLEMODE TE00 AND TM00 RIB OPTICAL WAVE-GUIDE-COMPOSED MULTIQUANTUM-WELL STRUCTURES

      Electronics Letters
    64. HATTORI H; NOMURA I; NAGANO T; SHIMBO H; HARAGUCHI M; MORITA T; KIKUCHI A; KISHINO K
      ABSORPTION-COEFFICIENT MEASUREMENTS OF MGZNCDSE II-VI COMPOUNDS ON INP SUBSTRATES AND QUANTUM-CONFINED STARK-EFFECT IN ZNCDSE MGZNCDSE MULTIPLE-QUANTUM WELLS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. SOEJIMA R; KURAMATA A; KUBOTA S; DOMEN K; HORINO K; TANAHASHI T
      CONTINUOUS-WAVE OPERATION AT 250 K OF INGAN MULTIPLE-QUANTUM-WELL LASER-DIODES GROWN ON 6H-SIC WITH VERTICAL CONDUCTING STRUCTURE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    66. KASHIMA Y; MUNAKATA T; MATOBA A
      INGAASP MULTIPLE-QUANTUM-WELL EDGE-EMITTING LIGHT-EMITTING DIODE SHOWING LOW-COHERENCE CHARACTERISTICS USING SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY

      Optical review
    67. MUNAKATA T; KASHIMA Y; MATOBA A
      1.625-MU-M HIGH-POWER STRAINED MULTIPLE-QUANTUM-WELL LASERS FOR OPTICAL TIME-DOMAIN REFLECTOMETERS

      Optical review
    68. TIEMEIJER LF; WALCZYK S; VERBOVEN AJM; VANDENHOVEN GN; THIJS PJA; VANDONGEN T; BINSMA JJM; JANSEN EJ
      HIGH-GAIN 1310 NM SEMICONDUCTOR OPTICAL AMPLIFIER MODULES WITH A BUILT-IN AMPLIFIED SIGNAL MONITOR FOR OPTICAL GAIN-CONTROL

      IEEE photonics technology letters
    69. O BH; CHOO HR; KIM HM; KIM JS; OH DK; KIM HR; KIM HM; PYUN KE
      CAVITY LENGTH DEPENDENCE OF HIGH-SPEED 1.55-MU-M MULTIPLE-QUANTUM-WELL LASER-DIODE CHARACTERISTICS

      IEEE photonics technology letters
    70. SEIFERTH F; JOHNSON FG; MERRITT SA; FOX S; WHALEY RD; CHEN YJ; DAGENAIS M; STONE DR
      POLARIZATION-INSENSITIVE 1.55-MU-M OPTICAL AMPLIFIER WITH GAAS DELTA-STRAINED GA0.47IN0.53AS QUANTUM-WELLS

      IEEE photonics technology letters
    71. MATSUI Y; MURAI H; ARAHIRA S; KUTSUZAWA S; OGAWA Y
      30-GHZ BANDWIDTH 1.55-MU-M STRAIN-COMPENSATED INGAALAS-INGAASP MQW LASER

      IEEE photonics technology letters
    72. TIEMEIJER LF; VANDENHOVEN GN; THIJS PJA; VANDONGEN T; BINSMA JJM; JANSEN EJ; VERBOVEN AJM
      HIGH-GAIN 1310-NM REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIERS WITH LOW-GAIN UNCERTAINTY

      IEEE photonics technology letters
    73. VANCAENEGEM T; MOERMAN I; DEMEESTER P
      SELECTIVE-AREA GROWTH ON PLANAR MASKED INP SUBSTRATES BY METAL-ORGANIC VAPOR-PHASE EPITAXY (MOVPE)

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    74. CALCAGNILE L; COLI G; CINGOLANI R; LOMASCOLO M; DIDIO M; SORBA L; FRANCIOSI A
      OPTICAL NONLINEARITIES AND LASING IN II-VI MULTIPLE-QUANTUM WELLS

      Materials science & engineering. B, Solid-state materials for advanced technology
    75. ADELABU JSA
      TEMPERATURE AND EXCITATION DEPENDENCE OF EMISSION ENERGIES IN MQW SYSTEMS

      Physica. B, Condensed matter
    76. KIM SW; SOHN KS
      COLLECTIVE EXCITATION OF A MULTIPLE-QUANTUM-WELL IN HGTE CDTE SUPERLATTICE/

      Physica. B, Condensed matter
    77. SASAKI T; YAMAGUCHI M; KOMATSU K; MITO I
      INPLANE BANDGAP ENERGY CONTROLLED SELECTIVE MOVPE AND ITS APPLICATIONS TO PHOTONIC INTEGRATED-CIRCUITS

      IEICE transactions on electronics
    78. TAKEMOTO A; HIGUCHI H; SHIBATA K; KATO M; ITAGAKI T; TAKIGUCHI T; HISA Y
      1.3 MU-M HIGH-PERFORMANCE FS-BH LASER-DIODES WITH WAVE-GUIDE LENS FOROPTICAL ACCESS NETWORK

      IEICE transactions on electronics
    79. ZHAO AP; JUNTUNEN J; RAISANEN AV
      ANALYSIS OF HYBRID MODES IN CHANNEL MULTILAYER OPTICAL WAVE-GUIDES WITH THE COMPACT 2-D FDTD METHOD

      Microwave and optical technology letters
    80. MA JG; CHEN ZZ
      MODELING OF NONLINEAR-WAVE PROPAGATION IN GAAS-ALAS MQW WITH A PERTURBATION TECHNIQUE

      Microwave and optical technology letters
    81. LEE HJ; LEE SS; CHANG HS; KIM KB
      BEAM-PROPAGATION ANALYSIS OF TAPERED NONLINEAR DIRECTIONAL-COUPLERS

      Microwave and optical technology letters
    82. FUJITA S; ASANO M; OHTA K; UEDA K; FUJITA S
      FABRICATION AND PROPERTIES OF ALUMINUMQUINOLINE OXADIAZOLE HETEROSTRUCTURE LUMINESCENT LAYERS/

      Synthetic metals
    83. KIM SW; SOHN KS
      THEORY OF COLLECTIVE EXCITATIONS IN A HGTE CDTE SUPERLATTICE/

      Journal of the Korean Physical Society
    84. SENGUPTA DK; FANG W; MALIN JI; CURTIS AP; HORTON T; KUO HC; TURNBULL D; LIN CH; LI J; HSIEH KC; CHUANG SL; ADESIDA I; FENG M; BISHOP SG; STILLMAN GE; GIBSON JM; CHEN H; MAZUMDER J; LIU HC
      EFFECTS OF RAPID THERMAL ANNEALING ON THE DEVICE CHARACTERISTICS OF QUANTUM-WELL INFRARED PHOTODETECTORS

      Journal of electronic materials
    85. KUMAR R; ONDA S; HARA K; KUNO H; MATSUI T
      A NEW QUANTUM STRUCTURE MULTIPLE-QUANTUM BARRIER AND MULTIPLE-QUANTUM-WELL IN ACTIVE-REGION DESIGN FOR LASER-DIODE APPLICATIONS

      Applied surface science
    86. MA CS
      CHARACTERISTIC ANALYSIS OF LOSSY PERIODIC REFRACTIVE-INDEX OPTICAL WAVE-GUIDES

      Optical engineering
    87. EKAWA M; FUJII T; TANAHASHI T
      EFFECT OF INCORPORATION EFFICIENCY ON DOPANT BEHAVIORS IN SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY

      Journal of crystal growth
    88. TAKIGUCHI T; ITAGAKI T; TAKEMI M; TAKEMOTO A; MIYAZAKI Y; SHIBATA K; HISA Y; GOTO K; MIHASHI Y; TAKAMIYA S; AIGA M
      SELECTIVE-AREA MOCVD GROWTH FOR 1.3-MU-M LASER-DIODES WITH A MONOLITHICALLY INTEGRATED WAVE-GUIDE LENS

      Journal of crystal growth
    89. NEILSON DT
      OPTIMIZATION AND TOLERANCE ANALYSIS OF QCSE MODULATORS AND DETECTORS

      IEEE journal of quantum electronics
    90. WU RH; CHEN ZB; CHEN HD; GAO WZ; ZHAO J
      THE MODE CONTROL OF ASYMMETRIC FABRY-PEROT OPTICAL MODULATORS WITH MULTIPLE-QUANTUM WELLS

      IEEE journal of quantum electronics
    91. IEHL JL; GRAC R; LEGRATIET L; BARDINAL V; BUHLEIER R; BEDELPEREIRA E; FONTAINE C; PUGNET M; COLLET JH
      PICOSECOND PHOTODIFFRACTION IN SEMICONDUCTOR MULTIQUANTUM WELLS AND MICROCAVITIES

      Annales des telecommunications
    92. MORI T; OBATA K; MIYACHI K; MIZUTANI T; KAWAKAMI Y
      FLUORESCENCE LIFETIME OF ORGANIC THIN-FILMS ALTERNATELY DEPOSITED WITH DIAMINE DERIVATIVE AND ALUMINUM QUINOLINE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    93. KURAMATA A; DOMEN K; SOEJIMA R; HORINO K; KUBOTA S; TANAHASHI T
      INGAN LASER-DIODE GROWN ON 6H-SIC SUBSTRATE USING LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    94. TAKIZAWA T; UCHINO A; SHIMIZU T; TAKEUCHI Y; ARAI S
      SWITCHING OF OPERATION OF GAINAS INP MULTIPLE-QUANTUM-WELL DIRECTIONAL-COUPLER-TYPE ALL-OPTICAL SWITCH/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    95. FAN C; VANBLERKOM DA; HENDRICK WL; ESENER SC
      FREE-SPACE OPTICAL INTERCONNECTION - A TECHNOLOGY COMPARISON OF VERTICAL-CAVITY SURFACE-EMITTING LASERS AND MULTIPLE-QUANTUM-WELL MODULATORS

      Optical review
    96. MA CS
      MODE PROPAGATION AND ABSORPTION LOSS IN METAL-CLAD PERIODIC OPTICAL WAVE-GUIDES

      Journal of the Optical Society of America. A, Optics, image science,and vision.
    97. LU H; BLAAUW C; MAKINO T
      SINGLE-MODE OPERATION OVER A WIDE TEMPERATURE-RANGE IN 1.3 MU-M INGAASP INP DISTRIBUTED-FEEDBACK LASERS/

      Journal of lightwave technology
    98. THOMPSON C; WEISS BL
      MODAL CHARACTERISTICS OF GRADED MULTILAYER OPTICAL WAVE-GUIDES

      Journal of lightwave technology
    99. AN HY; YANG SR; LIU SY
      INVESTIGATION OF STRAIN-COMPENSATED INGAAS(P) INGAAS(P)/INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY LP-MOVPE/

      Journal of electronic materials
    100. SUGIURA H
      MOMBE GROWTH OF INASP LASER MATERIALS

      Journal of crystal growth


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Documento generato il 25/10/20 alle ore 17:54:13