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La ricerca find articoli where soggetti phrase all words 'MULTIATOMIC STEPS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 18 riferimenti
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    1. Nitta, T; Ohno, Y; Shimomura, S; Hiyamizu, S
      Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    2. Pimpinelli, A; Videcoq, A; Vladimirova, M
      Kinetic surface patterning in two-particle models of epitaxial growth

      APPLIED SURFACE SCIENCE
    3. Yan, FW; Zhang, WJ; Zhang, RG; Cui, LQ; Liang, CG; Liu, SY
      Surface corrugation of In0.15Ga0.85As layers grown on (553)B-oriented GaAssubstrates by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    4. Ohno, Y; Higashiwaki, M; Shimomura, S; Hiyamizu, S; Ikawa, S
      Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)(6)(AlAs)(1) quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    5. Motohisa, J; Tazaki, C; Irisawa, T; Akabori, M; Fukui, T
      Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces

      JOURNAL OF ELECTRONIC MATERIALS
    6. Motohisa, J; Tazaki, C; Akabori, M; Fukui, T
      Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces

      JOURNAL OF CRYSTAL GROWTH
    7. Vladimirova, M; Pimpinelli, A; Videcoq, A
      A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation

      JOURNAL OF CRYSTAL GROWTH
    8. Harada, T; Oda, Y; Motohisa, J; Fukui, T
      Novel nano-faceting structures grown on patterned vicinal (110) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    9. Yamatani, K; Akabori, N; Motohisa, S; Fukui, T
      Characterization of potential modulation in novel lateral surface superlattices formed on GaAs multiatomic steps

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Nakamura, Y; Sakaki, H
      Anisotropic magneto-resistance of laterally modulated GaAs/AlGaAs systems with a 15-20 nm periodicity formed on vicinal (1 1 1)B substrates

      PHYSICA B
    11. Akabori, M; Motohisa, J; Fukui, T
      Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    12. Kizuki, H; Kajikawa, Y; Hisa, Y; Mihashi, Y
      Observation of quasiperiodic faceting both on MOCVD-grown and on gas-etched surfaces of vicinal (1 1 0)GaAs substrates

      JOURNAL OF CRYSTAL GROWTH
    13. IRISAWA T; MOTOHISA J; AKABORI M; FUKUI T
      DELTA-DOPING AND THE POSSIBILITY OF WIRE-LIKE INCORPORATION OF SI ON GAAS VICINAL SURFACES IN METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    14. ASAHI H
      SELF-ORGANIZED QUANTUM WIRES AND DOTS IN III-V SEMICONDUCTORS

      Advanced materials
    15. ISHIZAKI JY; ISHIKAWA Y; OHKURI K; KAWASE M; FUKUI T
      ULTRA-HIGH-VACUUM SCANNING TUNNELING MICROSCOPE OBSERVATION OF VICINAL (001) GAAS SURFACE AND (117)B GAAS SURFACE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

      Applied surface science
    16. SEIFERT W; CARLSSON N; JOHANSSON J; PISTOL ME; SAMUELSON L
      IN-SITU GROWTH OF NANOSTRUCTURES BY METAL-ORGANIC VAPOR-PHASE EPITAXY

      Journal of crystal growth
    17. AKABORI M; MOTOHISA J; IRISAWA T; HARA S; ISHIZAKI J; FUKUI T
      A NOVEL ELECTRON-WAVE INTERFERENCE DEVICE USING MULTIATOMIC STEPS ON VICINAL GAAS-SURFACES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - INVESTIGATION OF TRANSPORT-PROPERTIES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    18. MOTOHISA J; AKABORI M; HARA S; ISHIZAKI J; OHKURI K; FUKUI T
      THEORETICAL AND EXPERIMENTAL INVESTIGATION OF AN ELECTRON INTERFERENCE DEVICE USING MULTIATOMIC STEPS ON VICINAL GAAS-SURFACES

      Physica. B, Condensed matter


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/08/20 alle ore 02:47:15