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    1. Siebentritt, S; Kampschulte, T; Bauknecht, A; Blieske, U; Harneit, W; Fiedeler, U; Lux-Steiner, M
      Cd-free buffer layers for CIGS solar cells prepared by a dry process

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Kijima, T
      Relationship between Bi/Ti composition ratio and O-2 concentration for orientation control of MOCVD-grown Bi4Ti3O12 thin films

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    3. Chi, Y; Ranjan, S; Chou, TY; Liu, CS; Peng, SM; Lee, GH
      Preparation and characterization of volatile alkaline-earth metal complexes with multiply coordinated aminoalkoxide ligands

      JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS
    4. Coward, KM; Jones, AC; Steiner, A; Bickley, JF; Smith, LM; Pemble, ME
      Synthesis and crystal structures of trimethylindium adducts with bidentateand macrocyclic tertiary amines

      JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS
    5. Kuzmina, N; Ryazanov, M; Malkerova, I; Alikhanyan, A; Gleizes, AN
      The heterotrimetallic complex [Ni(acacen)KLa(pta)(4)]: Structural and thermochemical studies

      EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
    6. Banger, KK; Kornilov, A; Claessen, RU; Eisenbraun, ET; Kaloyeros, AE; Toscano, PJ; Welch, JT
      The first metal complex containing a silylated beta-diketonate ligand: bis(2,2,6,6-tetramethyl-2-sila-3,5-heptanedionato) copper(II)

      INORGANIC CHEMISTRY COMMUNICATIONS
    7. Deivaraj, TC; Park, JH; Afzaal, M; O'Brien, P; Vittal, JJ
      Single-source precursors to ternary silver indium sulfide materials

      CHEMICAL COMMUNICATIONS
    8. Krumdieck, S
      Kinetic model of low pressure film deposition from single precursor vapor in a well-mixed, cold-wall reactor

      ACTA MATERIALIA
    9. Lee, JH; Yang, WY; Rhee, SW; Kim, D
      Effect of the precursors on the deposition of (Ba, Sr)TiO3 films

      JOURNAL DE PHYSIQUE IV
    10. Maury, F; Bedel-Pereira, E
      Influence of hydrogen on chemical beam epitaxy of GaAs using triethylgallium and diethylarsine

      JOURNAL DE PHYSIQUE IV
    11. Barreca, D; Battiston, GA; Casellato, U; Gerbasi, R; Roncari, E; Tondello, E; Zanella, P
      Nanophased ZrO2-CeO2 or TiO2-ZrO2-CeO2 films by CVD as catalysts for hydrocarbon complete combustion

      JOURNAL DE PHYSIQUE IV
    12. Mathur, S; Veith, M; Sivakov, V; Shen, H; Gao, HB
      Composition, morphology and particle size control in nanocrystalline iron oxide films grown by single-source CVD

      JOURNAL DE PHYSIQUE IV
    13. Atakan, B; Liu, ZJ
      Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor

      JOURNAL DE PHYSIQUE IV
    14. Kuzmina, N; Malkerova, I; Ryazanov, M; Alikhanyan, A; Rogachev, A; Gleizes, AN
      Volatility studies on single source precursors for LaNiO3 film deposition:Mass spectrometry and thermal analysis

      JOURNAL DE PHYSIQUE IV
    15. Jimenez, C; Guillon, H; Pierret, B; Stadel, O; Schmidt, J; Krause, U; Wahl, G
      Characterization of a solvant-free vapour source for MOCVD

      JOURNAL DE PHYSIQUE IV
    16. Liu, WC; Lin, KW; Yu, KH; Chang, WL; Cheng, CC; Wang, CK; Chang, HM
      High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (delta-PHEMT's)

      JOURNAL DE PHYSIQUE IV
    17. Krylova, IV
      Exoemission near phase transitions of epitaxial films of manganites with colossal magnetic resistance

      RUSSIAN CHEMICAL BULLETIN
    18. Baumann, PK; Streiffer, SK; Bai, GR; Ghosh, K; Auciello, O; Thompson, C; Stemmer, S; Rao, RA; Eom, CB; Xu, F; Trolier-McKinstry, S; Kim, DJ; Maria, JP; Kingon, AI
      Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD

      INTEGRATED FERROELECTRICS
    19. Soyer, C; Haccart, T; Cattan, E; Remiens, D
      (Zr/Ti) ratio effect on RF magnetron sputtered lead titanate zirconate films

      INTEGRATED FERROELECTRICS
    20. Li, TK; Hsu, ST
      Ferroelectric Pb5Ge3O11 MFMOS capacitor for one transistor memory applications

      INTEGRATED FERROELECTRICS
    21. Choi, KJ; Shin, WC; Yoon, SG
      Characteristics of ferroelectric YMnO3 thin films for MFISFET by MOCVD

      INTEGRATED FERROELECTRICS
    22. Baumann, PK; Kaufman, DY; Im, J; Auciello, O; Streiffer, SK; Erck, RA; Guimarra, J
      MOCVD (BaxSr1-x)Ti1+yO3+z (BST) thin films for high frequency tunable devices

      INTEGRATED FERROELECTRICS
    23. Saito, K; Ishikawa, K; Saiki, A; Yamaji, I; Akai, T; Funakubo, H
      Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

      INTEGRATED FERROELECTRICS
    24. Novojilov, MA; Kaul, AR; Gorbenko, OY; Wahl, G; Krause, U
      Fully MOCVD obtained epitaxial ferroelectric capacitors

      INTEGRATED FERROELECTRICS
    25. Li, TK; Hsu, ST
      The reliability properties of MOCVD PZT thin films on multilayer PT/IR electrodes

      INTEGRATED FERROELECTRICS
    26. Zhang, W; Li, C; Du, Z
      A thermodynamic database of the Al-Ga-In-P-As-Sb-C-H system and its application in the design of an epitaxy process for III-V semiconductors

      JOURNAL OF PHASE EQUILIBRIA
    27. Selvamanickam, V; Carota, G; Funk, M; Vo, N; Haldar, P; Balachandran, U; Chudzik, M; Arendt, P; Groves, JR; DePaula, R; Newnam, B
      High-current Y-Ba-Cu-O coated conductor using metal organic chemical-vapordeposition and ion-beam-assisted deposition

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    28. Yoshida, Y; Hirabayashi, I; Kurosaki, H; Akata, H; Higashiyama, K; Takai, Y
      Growth mechanism of YBa2Cu3O7-y thin films on the metallic tapes by MOCVD

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    29. Panda, A; Mugesh, G; Singh, HB; Butcher, RJ
      Intramolecularly coordinated organoselenium darivatives: Syntheses, structure and reactivity

      PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS
    30. Selvakumar, D; Singh, R; Nasim, M; Mathur, GN
      Synthesis of bis(alkyltelluro)methanes and their complexation with cadmium(II)

      PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS
    31. Just, O; Rees, WS
      Ligand design for stabilization of group 2 element compounds by intramolecular coordination

      PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS
    32. Kim, TG; Son, CS; Ogura, M
      Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step

      IEEE PHOTONICS TECHNOLOGY LETTERS
    33. Zhang, DH; Liu, YY; Zhang, DJ
      The UV photoconductivity of n-type GaN films deposited by MOCVD

      ACTA PHYSICA SINICA
    34. Nieminen, M; Sajavaara, T; Rauhala, E; Putkonen, M; Niinisto, L
      Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy

      JOURNAL OF MATERIALS CHEMISTRY
    35. Jones, AC; Williams, PA; Bickley, JF; Steiner, A; Davies, HO; Leedham, TJ; Awaluddin, A; Pemble, ME; Critchlow, GW
      Synthesis and crystal structures of two new titanium alkoxy-diolate complexes. Potential precursors for oxide ceramics

      JOURNAL OF MATERIALS CHEMISTRY
    36. Koroleva, LI; Abramovich, AI; Michurin, AV; Gorbenko, OY; Graboy, IE; Kaul, AR; Szymczak, R; Dyeyev, S; Zandbergen, HW
      Colossal magnetoresistance of La0.35Nd0.35Sr0.3MnO3 epitaxial thin film on(001)ZrO2(Y2O3) substrate over a wide temperature range

      JOURNAL OF PHYSICS-CONDENSED MATTER
    37. Liu, XD; Funakubo, H; Noda, S; Komiyama, H
      Internal microstructure and formation mechanism of surface protrusions in Pb-Ti-Nb-O thin films prepared by MOCVD

      CHEMICAL VAPOR DEPOSITION
    38. Choi, ES; Park, JB; Yoon, SG
      Integration of Pt/Ru bottom electrode structures onto polycrystalline silicon by MOCVD

      CHEMICAL VAPOR DEPOSITION
    39. Williams, PA; Jones, AC; Crosbie, MJ; Wright, PJ; Bickley, JF; Steiner, A; Davies, HO; Leedham, TJ; Critchlow, GW
      Crystal structure of Bi(OCMe2CH2OMe)(3) and its use in the MOCVD of Bi2O3

      CHEMICAL VAPOR DEPOSITION
    40. Battiston, GA; Gerbasi, R
      Gas phase vibrations as a tool for the characterization of CVD precursors and processes

      CHEMICAL VAPOR DEPOSITION
    41. Lobinger, P; Park, HS; Hohmeister, H; Roesky, HW
      A new approach to In2O3 layers from the single-source precursors [Et-2 InOH center dot Et-2 InNH2] and [(Pr2InOH)-Pr-i center dot (Pr2InNH2)-Pr-i]

      CHEMICAL VAPOR DEPOSITION
    42. Chi, KM; Lu, YH
      MOCVD of silver thin films from the (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)silver[bis (trimethyisilyl) acetylene] complex

      CHEMICAL VAPOR DEPOSITION
    43. Battiston, GA; Carta, G; Cavinato, G; Gerbasi, R; Porchia, M; Rossetto, G
      MOCVD of Al2O3 films using new dialkylaluminum acetylacetonate precursors:Growth kinetics and process yields

      CHEMICAL VAPOR DEPOSITION
    44. Suh, S; Hoffman, DM; Atagi, LM; Smith, DC
      Atmospheric-pressure MOCVD of films containing zinc silicate

      CHEMICAL VAPOR DEPOSITION
    45. Krumdieck, SP; Raj, R
      Experimental characterization and modeling of pulsed MOCVD with ultrasonicatomization of liquid precursor

      CHEMICAL VAPOR DEPOSITION
    46. Yamamoto, S; Oda, S
      Atomic layer-by-layer MOCVD of complex metal oxides and in situ process monitoring

      CHEMICAL VAPOR DEPOSITION
    47. Putkonen, M; Sajavaara, T; Johansson, LS; Niinisto, L
      Low-temperature ALE deposition of Y2O3 thin films from beta-diketonate precursors

      CHEMICAL VAPOR DEPOSITION
    48. Jo, W
      Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    49. Kaplar, RJ; Kwon, D; Ringel, SA; Allerman, AA; Kurtz, SR; Jones, ED; Sieg, RM
      Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    50. Piscopiello, E; Catalano, M; Antisari, MV; Passaseo, A; Branca, E; Cingolani, R; Berti, M
      Influence of the N-2/H-2 ratio on the structural features of InxGa1-xN/GaNfilms grown by MOCVD

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    51. Stringfellow, GB
      Fundamental aspects of organometallic vapor phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    52. Sun, YJ; Li, AZ; Qi, M; Zhang, LY; Yao, X
      High surface area anatase titania nanoparticles prepared by MOCVD

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    53. Wang, Y; Gong, H; Zhu, FR; Liu, L; Huang, L; Huan, ACH
      Optical and electrical properties of p-type transparent conducting Cu-Al-Othin films prepared by plasma enhanced chemical vapor deposition

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    54. Park, W; Lee, C
      Plasma pretreatments for Cu-MOCVD

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    55. Ruterana, P; Jores, GD; Omnes, F
      New form of ordering in AlGaN

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    56. Look, DC
      Recent advances in ZnO materials and devices

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    57. Bar-Ilan, AH; Zamir, S; Katz, O; Meyler, B; Salzman, J
      GaN layer growth optimization for high power devices

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    58. Plausinaitiene, V; Abrutis, A; Vengalis, B; Butkute, R; Senateur, JP; Saltyte, Z; Kubilius, V
      Spin-polarized quasiparticle injection effect in MOCVD-grown YBa2Cu3O7/SrTiO3/La1-xSrxMnO3 heterostructures

      PHYSICA C
    59. Ding, Z; Hu, XJ; Yue, PL; Lu, GQ; Greenfield, PF
      Synthesis of anatase TiO2 supported on porous solids by chemical vapor deposition

      CATALYSIS TODAY
    60. Daub, K; Wunder, VK; Dittmeyer, R
      CVD preparation of catalytic membranes for reduction of nitrates in water

      CATALYSIS TODAY
    61. Nukaga, N; Mitsuya, M; Funakubo, H
      Chemical stability of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

      IEICE TRANSACTIONS ON ELECTRONICS
    62. Pan, N; Welser, RE; Stevens, KS; Lutz, CR
      Reliability of InGaP and AlGaAsHBT

      IEICE TRANSACTIONS ON ELECTRONICS
    63. Shtansky, DV; Kulinich, SA; Terashima, K; Yoshida, T; Ikuhara, Y
      Crystallography and structural evolution of LiNbO3 and LiNb1-xTaxO3 films on sapphire prepared by high-rate thermal plasma spray chemical vapor deposition

      JOURNAL OF MATERIALS RESEARCH
    64. Vydianathan, K; Nuesca, G; Peterson, G; Eisenbraun, ET; Kaloyeros, AE; Sullivan, JJ; Han, B
      Metalorganic chemical vapor deposition of titanium oxide for microelectronics applications

      JOURNAL OF MATERIALS RESEARCH
    65. Kim, HR; Jeong, S; Jeon, CB; Kwon, OS; Hwang, CS; Han, YK; Yang, DY; Oh, KY
      Metalorganic chemical vapor deposition of very thin Pb(Zr,Ti)O-3 thin films at low temperatures for high-density ferroelectric memory applications

      JOURNAL OF MATERIALS RESEARCH
    66. Bachhofer, H; von Philipsborn, H; Hartner, W; Dehm, C; Jobst, B; Kiendl, A; Schroeder, H; Waser, R
      Phase formation and crystal growth of Sr-Bi-Ta-O thin films grown by metalorganic chemical vapor deposition

      JOURNAL OF MATERIALS RESEARCH
    67. Wang, WC; Pan, HJ; Thei, KB; Lin, KW; Yu, KH; Cheng, CC; Cheng, SY; Liu, WC
      Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor

      SUPERLATTICES AND MICROSTRUCTURES
    68. Wang, WC; Pan, HJ; Yu, KH; Lin, KW; Tsai, JH; Cheng, SY; Liu, WC
      Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures

      SUPERLATTICES AND MICROSTRUCTURES
    69. Kim, HS; Choi, IH; Oh, DK; Park, MH; Hwang, N; Lee, HT
      1.55 mu m spot-size converter integrated laser diode with a vertically tapered thickness waveguide using selective area metalorganic vapor phase epitaxy

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    70. Pereira, S; Correia, MR; Pereira, E; O'Donnell, KP; Trager-Cowan, C; Sweeney, F; Alves, E; Sequeira, AD; Franco, N; Watson, IM
      Depth resolved studies of indium content and strain in InGaN layers

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    71. Cui, Y; Ren, J; Chen, G; Qian, YT; Xie, Y
      A simple route to synthesize MInS2 (M = Cu, Ag) nanorods from single-molecule precursors

      CHEMISTRY LETTERS
    72. Ramelan, AH; Drozdowicz-Tomsia, K; Goldys, EM; Tansley, TL
      Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition

      JOURNAL OF ELECTRONIC MATERIALS
    73. Barrios, CA; Messmer, ER; Holmgren, M; Risberg, A; Halonen, J; Lourdudoss, S
      Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe

      JOURNAL OF ELECTRONIC MATERIALS
    74. Lee, WH; Ko, YK; Choi, JH; Byun, IJ; Kwak, HT; Kim, DH; Rhee, SW; Reucroft, PJ; Lee, JG
      The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursor

      JOURNAL OF ELECTRONIC MATERIALS
    75. Li, T; Lambert, DJH; Beck, AL; Collins, CJ; Yang, B; Wong, MM; Chowdhury, U; Dupuis, RD; Campbell, JC
      Low-noise solar-blind AlxGa1-xN-based metal semiconductor-metal ultraviolet photodetectors

      JOURNAL OF ELECTRONIC MATERIALS
    76. Kim, DJ; Moon, YT; Song, KM; Lee, IW; Park, SJ
      Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

      JOURNAL OF ELECTRONIC MATERIALS
    77. Bourret-Courchesne, ED; Yu, KM; Benamara, M; Liliental-Weber, Z; Washburn, J
      Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

      JOURNAL OF ELECTRONIC MATERIALS
    78. Smith, LM; Coward, KM; Jones, AC; Bickley, JF; Steiner, A; Petroni, S; Roberts, JS
      Purification of dialkylzinc precursors using tertiary amine ligands

      JOURNAL OF ELECTRONIC MATERIALS
    79. Park, WI; Yi, GC
      Photoluminescent properties of ZnO thin films grown on SiO2/Si(100) by metal-organic chemical vapor deposition

      JOURNAL OF ELECTRONIC MATERIALS
    80. Zhang, XB; Hark, SK
      Influence of capping layer thickness on the polarization of photoluminescence of CdSe/ZnSe quantum dots grown by metalorganic chemical vapor phase deposition

      JOURNAL OF ELECTRONIC MATERIALS
    81. Kokubun, Y; Nishio, J; Abe, M; Ehara, T; Nakagomi, S
      Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

      JOURNAL OF ELECTRONIC MATERIALS
    82. Jun, CH; Kim, YT
      The effects of process conditions and substrate on copper MOCVD using liquid injection of (hfac)Cu(vtmos)

      JOURNAL OF ELECTRONIC MATERIALS
    83. Daniele, S; Hubert-Pfalzgraf, LG; Bavoux, C
      Calcium tetramethylheptanedionate adducts with N-donor ligands. Molecular structure of a dimeric and volatile adduct Ca-2(eta(2)-thd)(mu,eta(2)-thd)(3)(eta(2)-bipy)

      POLYHEDRON
    84. Baxter, DV; Caulton, KG; Chiang, WC; Chisholm, MH; DiStasi, VF; Dutremez, SG; Folting, K
      Synthesis, structural characterization, thermolysis and volatility study of the Schiff base complex Cu[CH3C(O)CHC(NCH2CH2OCH3)CH3](2)

      POLYHEDRON
    85. Davies, HO; Brooks, JJ; Jones, AC; Leedham, TJ; Bickley, JF; Steiner, A; O'Brien, P; White, AJP; Williams, DJ
      Synthesis and crystal structures of three new strontium beta-diketonate complexes: [Sr(tmhd)(2)((PrOH)-Pr-i)(4)], [Sr-2(tmhd)(4)(dmaeH)(2)(mu(2)-dmaeH)(2)] and [Sr-4(tmod)(8)]

      POLYHEDRON
    86. Smowton, PM; Thomson, JD; Yin, M; Dewar, SV; Blood, P; Bryce, AC; Marsh, JH; Hamilton, CJ; Button, CC
      Optical loss in large optical cavity 650 nm lasers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    87. Boulyga, SF; Dietze, HJ; Becker, JS
      Determination of the stoichiometry and trace impurities in thin barium strontium titanate perovskite layers by inductively coupled plasma-mass spectrometry

      JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY
    88. Suh, S; Miinea, LA; Hoffman, DM; Zhang, Z; Chu, WK
      Atmospheric pressure chemical vapor deposition of undoped zinc oxide filmsfrom a zinc amide precursor

      JOURNAL OF MATERIALS SCIENCE LETTERS
    89. Hwang, JS; Lee, CH; Yang, FH; Chen, KH; Hwa, LG; Yang, YJ; Chen, LC
      Resistive heated MOCVD deposition of InN films

      MATERIALS CHEMISTRY AND PHYSICS
    90. Pan, CY; Tsai, DS; Hong, LS
      Abnormal growth of lead titanate thin film in chemical vapor deposition ofPb(C2H5)(4)/Ti(OPri)(4)/O-2

      MATERIALS CHEMISTRY AND PHYSICS
    91. Barfels, T; Fitting, HJ; Jansons, J; Tale, I; Veispals, A; von Czarnowski, A; Wulff, H
      Structure and luminescence of GaN layers

      APPLIED SURFACE SCIENCE
    92. Ramirez-Ortiza, J; Ogura, T; Medina-Valtierra, J; Acosta-Ortiz, SE; Bosch, P; de los Reyes, JA; Lara, VH
      A catalytic application of Cu2O and CuO films deposited over fiberglass

      APPLIED SURFACE SCIENCE
    93. Boo, JH; Lee, SB; Ku, SJ; Koh, W; Kim, C; Yu, KS; Kim, Y
      MOCVD of MgAl2O4 thin films using new single molecular precursors: application of beta-hydrogen elimination to the growth of heterometallic oxide films

      APPLIED SURFACE SCIENCE
    94. Peters, AM; He, XM; Trkula, M; Nastasi, M
      Annealing of chromium oxycarbide coatings deposited by plasma immersion ion processing (PIIP) for aluminum die casting

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    95. Sabbadini, A; Cazzaniga, F; Alberici, S; Bresolin, C; Casati, G; Cusi, V; Pavia, G; Queirolo, G
      Impact of plasma treatment time on MOCVD-TiN properties and on the electrical performance of deep contacts

      MICROELECTRONIC ENGINEERING
    96. Riedel, S; Schulz, SE; Baumann, J; Rennau, M; Gessner, T
      Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion

      MICROELECTRONIC ENGINEERING
    97. Ni, JZ; BelBruno, JJ
      MOCVD of cadmium and gallium using metastable atom energy transfer

      MATERIALS LETTERS
    98. Kim, HM; Kang, TW
      Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD

      MATERIALS LETTERS
    99. Amelitchev, VA; Guttler, B; Gorbenko, OY; Kaul, AR; Bosak, AA; Ganin, AY
      Structural and chemical analysis of colossal magnetoresistance manganites by Raman spectrometry - art. no. 104430

      PHYSICAL REVIEW B
    100. Hubert-Pfalzgraf, LG; Labrize, F; Vaissermann, J
      Synthesis and molecular structure of [Cu(mu-OC6H3-2,6-Me-2)(thd)](2): A ligand-mediated reduction to metallic copper

      JOURNAL OF COORDINATION CHEMISTRY


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Documento generato il 28/10/20 alle ore 04:56:04