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La ricerca find articoli where soggetti phrase all words 'METALORGANIC CHEMICAL VAPOR DEPOSITION' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 224 riferimenti
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    1. Goto, T; Ono, T; Hirai, T
      Electrochemical properties of iridium-carbon nano composite films preparedby MOCVD

      SCRIPTA MATERIALIA
    2. Ramesh, R; Aggarwal, S; Auciello, O
      Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    3. Ma, YW; Watanabe, K; Awaji, S; Masumoto, H; Motokawa, M
      Effect of magnetic field on growth of YBa2Cu3O7 films on MgO substrates bymetalorganic chemical vapor deposition

      PHYSICA C
    4. Nukaga, N; Mitsuya, M; Funakubo, H
      Chemical stability of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

      IEICE TRANSACTIONS ON ELECTRONICS
    5. Ryou, JH; Dupuis, RD; Reddy, CV; Narayanamurti, V; Mathes, DT; Hull, R; Mintairov, A; Merz, JL
      Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates

      JOURNAL OF ELECTRONIC MATERIALS
    6. Kim, DJ; Moon, YT; Song, KM; Lee, IW; Park, SJ
      Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

      JOURNAL OF ELECTRONIC MATERIALS
    7. Kokubun, Y; Nishio, J; Abe, M; Ehara, T; Nakagomi, S
      Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

      JOURNAL OF ELECTRONIC MATERIALS
    8. Jun, CH; Kim, YT
      The effects of process conditions and substrate on copper MOCVD using liquid injection of (hfac)Cu(vtmos)

      JOURNAL OF ELECTRONIC MATERIALS
    9. Krumdieck, S; Raj, R
      Growth rate and morphology for ceramic films by pulsed-MOCVD

      SURFACE & COATINGS TECHNOLOGY
    10. Wang, LS; Fong, WK; Surya, C; Cheah, KW; Zheng, WH; Wang, ZG
      Photoluminescence of rapid-thermal annealed Mg-doped GaN films

      SOLID-STATE ELECTRONICS
    11. Cho, HK; Lee, JY; Jeon, SR; Yang, GM
      Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    12. Wang, HX; Amijima, Y; Ishihama, Y; Sakai, S
      Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system

      JOURNAL OF CRYSTAL GROWTH
    13. Yang, Y; Shen, DZ; Zhang, JY; Fan, XW; Li, BS; Lu, YM; Liu, YC; Liu, YN
      The formation mechanism of self-assembled CdSe quantum dots

      JOURNAL OF CRYSTAL GROWTH
    14. Shan, CX; Fan, XW; Zhang, JY; Zhang, ZZ; Ma, JG; Lu, YM; Liu, YC; Shen, DZ
      Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    15. Song, KM; Kim, DJ; Moon, YT; Park, SJ
      Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium

      JOURNAL OF CRYSTAL GROWTH
    16. Ma, YW; Watanabe, K; Awaji, S; Motokawa, M
      Surface morphology and growth mechanism of YBa2Cu3O7 films by chemical vapor deposition in a magnetic field

      JOURNAL OF CRYSTAL GROWTH
    17. Zheng, XH; Qu, B; Wang, YT; Feng, ZH; Han, JY; Yang, H; Liang, JW
      Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD

      JOURNAL OF CRYSTAL GROWTH
    18. Puchinger, M; Wagner, T; Fini, P; Kisailus, D; Beck, U; Bill, J; Aldinger, F; Arzt, E; Lange, FF
      Chemical solution deposition derived buffer layers for MOCVD-grown GaN films

      JOURNAL OF CRYSTAL GROWTH
    19. Vanhollebeke, K; D'Hondt, M; Moerman, I; Van Daele, P; Demeester, P
      MOVPE based Zn diffusion into InP and InAsP/InP hetero structures

      JOURNAL OF CRYSTAL GROWTH
    20. Cho, HK; Lee, JY; Kim, CS; Yang, GM; Sharma, N; Humphreys, C
      Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition

      JOURNAL OF CRYSTAL GROWTH
    21. Davis, RF; Gehrke, T; Linthicum, KJ; Preble, E; Rajagopal, P; Ronning, C; Zorman, C; Mehregany, M
      Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

      JOURNAL OF CRYSTAL GROWTH
    22. Mathis, SK; Romanov, AE; Chen, LF; Beltz, GE; Pompe, W; Speck, JS
      Modeling of threading dislocation reduction in growing GaN layers

      JOURNAL OF CRYSTAL GROWTH
    23. Lee, S; Akabori, M; Shirahata, T; Takada, K; Motohisa, J; Fukui, T
      The initial stage of InGaAs growth by MOVPE on multiatomic-stepped GaAs structures

      JOURNAL OF CRYSTAL GROWTH
    24. Honda, Y; Kawaguchi, Y; Ohtake, Y; Tanaka, S; Yamaguchi, M; Sawaki, N
      Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates

      JOURNAL OF CRYSTAL GROWTH
    25. Sharma, N; Tricker, D; Thomas, P; Bougrioua, Z; Jacobs, K; Cheyns, J; Moerman, I; Thrush, T; Considine, L; Boyd, A; Humphreys, C
      Chemical mapping of InGaN MQWs

      JOURNAL OF CRYSTAL GROWTH
    26. Xia, R; Xu, H; Harrison, I; Beaument, B; Andrianov, A; Dods, SRA; Morgan, JM; Larkins, EC
      Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs

      JOURNAL OF CRYSTAL GROWTH
    27. Kirilyuk, V; Zauner, ARA; Christianen, PCM; Weyher, JL; Hageman, PR; Larsen, PK
      Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates

      JOURNAL OF CRYSTAL GROWTH
    28. Traetta, G; Di Carlo, A; Reale, A; Lugli, P; Lomascolo, M; Passaseo, A; Cingolani, R; Bonfiglio, A; Berti, M; Napolitani, E; Natali, M; Sinha, SK; Drigo, AV
      Charge storage and screening of the internal field in GaN/AlGaN quantum wells

      JOURNAL OF CRYSTAL GROWTH
    29. Mistele, D; Fedler, F; Klausing, H; Rotter, T; Stemmer, J; Semchinova, OK; Aderhold, J
      Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

      JOURNAL OF CRYSTAL GROWTH
    30. Shibata, T; Asai, K; Nakamura, Y; Tanaka, M; Kaigawa, K; Shibata, J; Sakai, H
      AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

      JOURNAL OF CRYSTAL GROWTH
    31. Yoshida, Y; Hirabayashi, I; Takai, Y
      Rapid growth of YBa2Cu3O7-y films by metalorganic chemical vapor deposition using vapor-liquid-solid mode

      JOURNAL OF CRYSTAL GROWTH
    32. Lee, YK; Han, SW; Lee, SS; Kim, CG; Kim, Y
      The growth of beta-LiGaO2 films using novel single precursors

      JOURNAL OF CRYSTAL GROWTH
    33. Cho, S; Kim, EK
      Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs

      JOURNAL OF CRYSTAL GROWTH
    34. Souliere, V; Dumont, H; Auvray, L; Monteil, Y
      Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP(001) step-bunched surfaces

      JOURNAL OF CRYSTAL GROWTH
    35. Yang, M; Cho, M; Kim, C; Yi, J; Jeon, J; Khym, S; Kim, M; Choi, Y; Leem, SJ; Lee, YH
      A selective growth of III-nitride by MOCVD for a buried-ridge type structure

      JOURNAL OF CRYSTAL GROWTH
    36. Wang, XQ; Yang, SR; Wang, JZ; Li, MT; Jiang, XY; Du, GT; Liu, X; Chang, RPH
      Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    37. Liang, S; Sheng, H; Liu, Y; Huo, Z; Lu, Y; Shen, H
      ZnO Schottky ultraviolet photodetectors

      JOURNAL OF CRYSTAL GROWTH
    38. Juang, FS; Chu, TK
      Effect of diluted ammonia flow rate on undoped GaN epitaxial films grown by MOCVD

      JOURNAL OF CRYSTAL GROWTH
    39. Chen, P; Zhang, R; Zhao, ZM; Xi, DJ; Shen, B; Chen, ZZ; Zhou, YG; Xie, SY; Lu, WF; Zheng, YD
      Growth of high quality GaN layers with AlN buffer on Si(111) substrates

      JOURNAL OF CRYSTAL GROWTH
    40. Muthukumar, S; Gorla, CR; Emanetoglu, NW; Liang, S; Lu, Y
      Control of morphology and orientation of ZnO thin films grown on SiO2/Si substrates

      JOURNAL OF CRYSTAL GROWTH
    41. Geisz, JF; Friedman, DJ; Kurtz, S; Olson, JM; Swartzlander, AB; Reedy, RC; Norman, AG
      Epitaxial growth of BGaAs and BGaInAs by MOCVD

      JOURNAL OF CRYSTAL GROWTH
    42. Biefeld, RM; Cederberg, JG; Peake, GM; Kurtz, SR
      The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    43. Pan, N; Welser, RE; Lutz, CR; DeLuca, PM; Han, B; Hong, K
      Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors

      JOURNAL OF CRYSTAL GROWTH
    44. Yang, Y; Shen, DZ; Zhang, JY; Fan, XW; Zhen, ZH; Zhao, XW; Zhao, DX; Liu, YN
      The effect of diffusion on formation of self-assembled CdSe quantum dots

      JOURNAL OF CRYSTAL GROWTH
    45. Fu, Y; Yang, H; Zhao, DG; Zheng, XH; Li, SF; Sun, YP; Feng, ZH; Wang, YT; Duan, LH
      Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    46. Park, CI; Kang, JH; Kim, KC; Suh, EK; Lim, KY; Nahm, KS
      Characterization of GaN thin film growth on 3C-SiC/Si(111) substrate usingvarious buffer layers

      JOURNAL OF CRYSTAL GROWTH
    47. Parent, DW; Rodriguez, A; Ayers, JE; Jain, FC
      The photoassisted MOVPE growth of ZnMgSSe

      JOURNAL OF CRYSTAL GROWTH
    48. Yoo, DC; Lee, JY
      Effects of post-annealing on the interface microstructure of (Ba,Sr)TiO3 thin films

      JOURNAL OF CRYSTAL GROWTH
    49. Mazumder, S; Lowry, SA
      The importance of predicting rate-limited growth for accurate modeling of commercial MOCVD reactors

      JOURNAL OF CRYSTAL GROWTH
    50. Kim, HJ; Park, YJ; Kim, EK; Kim, TW
      Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate bythe thickness of GaAs buffer layer

      JOURNAL OF CRYSTAL GROWTH
    51. Cho, HK; Kim, KS; Hong, CH; Lee, HJ
      Electron traps and growth rate of buffer layers in unintentionally doped GaN

      JOURNAL OF CRYSTAL GROWTH
    52. Kamiyama, S; Iwaya, M; Hayashi, N; Takeuchi, T; Amano, H; Akasaki, I; Watanabe, S; Kaneko, Y; Yamada, N
      Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

      JOURNAL OF CRYSTAL GROWTH
    53. Nukaga, N; Mitsuya, M; Suzuki, T; Nishi, Y; Fujimoto, M; Funakubo, H
      Local epitaxial growth of (103) one-axis-oriented SrBi2Ta2O9 thin films prepared at low deposition temperature by metalorganic chemical vapor deposition and their electrical properties

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. Mitsuya, M; Nukaga, N; Saito, K; Osada, M; Funakubo, H
      Low temperature direct crystallization of SrBi2(Ta1-xNbx)(2)O-9 thin filmsby thermal metalorganic chemical vapor deposition and their properties

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    55. Kim, HJ; Park, YJ; Min, BD; Hyon, CK; Park, SK; Kim, EK; Kim, TW
      Dependence of buffer layer on the distribution of InAs quantum dots

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    56. Sekiguchi, S; Kimura, T; Okazaki, G; Miyamoto, T; Koyama, F; Iga, K
      Tunnel junction for long-wavelength vertical-cavity surface-emitting lasers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    57. Mitsuya, M; Nukaga, N; Watanabe, T; Funakubo, H; Saito, K
      Property improvement of 75 nm-thick directly-crystallized SrBi2Ta2O9 thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    58. Zama, H; Takahashi, Y; Tanabe, K; Morishita, T
      Tantalum aluminum alkoxide as a double-metal precursor for metalorganic chemical vapor deposition of Sr2AlTaO6

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    59. Dupuis, RD
      III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    60. Tachibana, K; Someya, T; Arakawa, Y
      Growth of InGaN self-assembled quantum dots and their application to lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    61. Liu, Y; Gorla, CR; Liang, S; Emanetoglu, N; Lu, Y; Shen, H; Wraback, M
      Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

      JOURNAL OF ELECTRONIC MATERIALS
    62. Sun, XL; Wang, YY; Yang, H; Li, JB; Zheng, LX; Xu, DP; Wang, ZG
      The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

      THIN SOLID FILMS
    63. Derbali, MB; Meddeb, J; Abraham, P
      Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates

      THIN SOLID FILMS
    64. Matsuhata, H; Wang, XL; Ogura, M
      Studies on the structure of crescent-shaped GaAs quantum wires by combination of electron microscopy and photoluminescence spectroscopy

      JOURNAL OF ELECTRON MICROSCOPY
    65. Kwon, HK; Eiting, CJ; Lambert, DJH; Wong, MM; Shelton, BS; Zhu, TG; Liliental-Weber, Z; Benamura, M; Dupuis, RD
      Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    66. Ohba, Y; Sato, R
      Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio

      JOURNAL OF CRYSTAL GROWTH
    67. Kwon, HK; Eiting, CJ; Lambert, DJH; Shelton, BS; Wong, MM; Zhu, TG; Dupuis, RD
      Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    68. Yoshimura, K; Ishizaki, S; Yamada, Y; Taguchi, T
      Epitaxial growth of MgxZn1-xS heterostructures by low-pressure MOCVD

      JOURNAL OF CRYSTAL GROWTH
    69. Zama, H; Tanaka, N; Morishita, T
      Homoepitaxial YBa2Cu3Ox films grown on single-crystal YBa2Cu3Ox substratesby metalorganic chemical vapor deposition using beta-diketonates

      JOURNAL OF CRYSTAL GROWTH
    70. Lee, JJ; Razeghi, M
      Novel Sb-based materials for uncooled infrared photodetector applications

      JOURNAL OF CRYSTAL GROWTH
    71. Fini, P; Marchand, H; Ibbetson, JP; DenBaars, SP; Mishra, UK; Speck, JS
      Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction

      JOURNAL OF CRYSTAL GROWTH
    72. Takeshima, Y; Tanaka, K; Sakabe, Y
      Thickness dependence of characteristics for (Ba, Sr)TiO3 thin films prepared by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. Nukaga, N; Mitsuya, M; Funakubo, H
      Low-temperature preparation of SrBi2Ta2O9 thin films by electron cyclotronresonance plasma-enhanced metalorganic chemical vapor deposition and theirelectrical properties

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. Chung, SH; Lachab, M; Wang, T; Lacroix, Y; Basak, D; Fareed, Q; Kawakami, Y; Nishino, K; Sakai, S
      Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    75. Sekiguchi, S; Miyamoto, T; Kimura, T; Okazaki, G; Koyama, F; Iga, K
      Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    76. Sato, S
      Low threshold and high characteristic temperature 1.3 mu m range GaInNAs lasers grown by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    77. Sugiyama, M; Feron, O; Sudo, S; Nakano, Y; Tada, K; Komiyama, H; Shimogaki, Y
      Kinetics of GaAs metalorganic chemical vapor deposition studied by numerical analysis based on experimental reaction data

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    78. Mitsuya, M; Nukaga, N; Funakubo, H
      Direct preparation of crystalline SrBi2(Ta1-xNbx)(2)O-9 thin films by thermal metalorganic chemical vapor deposition at low temperature

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    79. Mitsuya, M; Ishikawa, K; Nukaga, N; Funakubo, H
      Preparation and characterization of SrBi2(Ta1-xNbx)(2)O-9 thin films by metalorganic chemical vapor deposition from two organometallic source bottles

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    80. Nagashima, K; Aratani, M; Funakubo, H
      Improvement of property of Pb(ZrxTi1-x)O-3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    81. Losurdo, M; Capezzuto, P; Bruno, G
      In situ real time ellipsometry monitoring during GaN epilayers processing

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    82. Stockman, SA; Huang, JW; Osentowski, TD; Chui, HC; Peanasky, MJ; Maranowski, SA; Grillot, PN; Moll, AJ; Chen, CH; Kuo, CP; Liang, BW
      Oxygen incorporation in AlInP, and its effect on p-type doping with magnesium

      JOURNAL OF ELECTRONIC MATERIALS
    83. Stafford, A; Irvine, SJC; Hess, KL; Bajaj, J
      Insights into MOCVD process control as revealed by laser interferometry

      JOURNAL OF ELECTRONIC MATERIALS
    84. Sakuma, Y; Shima, M; Awano, Y; Sugiyama, Y; Futatsugi, T; Yokoyama, N; Uchida, K; Miura, N; Sekiguchi, T
      InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition

      JOURNAL OF ELECTRONIC MATERIALS
    85. Kim, YT; Jun, CH; Kim, DY
      Effects of post-annealing by the rapid thermal process on the characteristics of MOCVD-Cu/TiN/Si structures

      JOURNAL OF ELECTRONIC MATERIALS
    86. Yanashima, K; Hashimoto, S; Hino, T; Funato, K; Kobayashi, T; Naganuma, K; Tojyo, T; Asano, T; Asatsuma, T; Miyajima, T; Ikeda, M
      Room-temperature continuous-wave operation of GaN-based laser diodes grownby raised-pressure metalorganic chemical vapor deposition

      JOURNAL OF ELECTRONIC MATERIALS
    87. Wickenden, AE; Koleske, DD; Henry, RL; Gorman, RJ; Culbertson, JC; Twigg, ME
      The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films

      JOURNAL OF ELECTRONIC MATERIALS
    88. Yoon, S; Moon, Y; Lee, TW; Hwang, H; Yoon, E; Kim, YD
      Shape change of InAs self-assembled quantum dots induced by As/P exchange reaction

      THIN SOLID FILMS
    89. Nakamura, S
      Blue light emitting laser diodes

      THIN SOLID FILMS
    90. Komatsu, M; Wang, F; Tanaka, N; Zama, H; Morishita, T
      Homoepitaxial growth of NdBa2Cu3O7-y films by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    91. Goto, T; Sasaki, T; Hirai, T
      High-temperature corrosion of platinum and iridium coated heat-resistant alloys in a Br-2-O-2 atmosphere

      JOURNAL OF THE JAPAN INSTITUTE OF METALS
    92. Kim, HJ; Park, YK; Kim, SI; Kim, EK; Kim, TW
      Facet evolution of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    93. Yamamoto, S; Nagata, K; Sugai, S; Sengoku, A; Matsukawa, Y; Hattori, T; Oda, S
      Reproducible growth of metalorganic chemical vapor deposition derived YBa2Cu3Ox thin films using ultrasonic gas concentration analyzer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. Kim, JH; Yang, GM; Choi, SC; Choi, JY; Cho, HK; Lim, KY; Lee, HJ
      Delta-doping of Si in GaN by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    95. Sato, S; Satoh, S
      1.21 mu m continuous-wave operation of highly strained GaInAs quantum welllasers an GaAs substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    96. Yamamoto, S; Sugai, S; Matsukawa, Y; Sengoku, A; Tobisaka, H; Hattori, T; Oda, S
      In situ growth monitoring during metalorganic chemical vapor deposition ofYBa2Cu3Ox thin films by spectroscopic ellipsometry

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    97. Funakubo, H; Nukaga, N; Ishikawa, K; Watanabe, T
      Preparation of SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition from two new liquid organometallic sources

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    98. SHIN WC; CHOI KJ; YANG CH; PARK JB; YOON SG
      PREPARATION OF FERROELECTRIC YMNO3 THIN-FILMS FOR NONVOLATILE MEMORY DEVICES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

      Integrated ferroelectrics (Print)
    99. ZAMA H; TANAKA N; MORISHITA T
      EVALUATION OF A NEW BA PRECURSOR, BA(DPM)(2)-2TETRAEN, FOR MOCVD OF OXIDE SUPERCONDUCTORS

      Materials science & engineering. B, Solid-state materials for advanced technology
    100. HARA Y; YONEKURA H; NODA Y
      PREPARATION OF NITROGEN-DOPED ZNSE THIN-FILMS BY RADICAL-ASSISTED MOCVD

      Materials transactions, JIM


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Documento generato il 15/08/20 alle ore 02:11:24