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La ricerca find articoli where soggetti phrase all words 'METAL-SEMICONDUCTOR-METAL STRUCTURES' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 90 riferimenti
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    1. Bertoncini, P; Wetzel, P; Berling, D; Mehdaoui, A; Loegel, B; Gewinner, G; Poinsot, R; Pierron-Bohnes, V
      Magnetic anisotropy of epitaxial Fe layers grown on Si(001)

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    2. Gergen, B; Weyers, SJ; Nienhaus, H; Weinberg, WH; McFarland, EW
      Observation of excited electrons from nonadiabatic molecular reactions of NO and O-2 on polycrystalline Ag

      SURFACE SCIENCE
    3. Boubeta, CM; Menendez, JL; Costa-Kramer, JL; Garcia, JM; Anguita, JV; Bescos, B; Cebollada, A; Briones, F; Chernykh, AV; Malikov, IV; Mikhailov, GM
      Epitaxial metallic nanostructures on GaAs

      SURFACE SCIENCE
    4. Teodorescu, CM; Chevrier, F; Brochier, R; Richter, C; Heckmann, O; Ilakovac, V; De Padova, P; Hricovini, K
      X-ray magnetic circular dichroism, photoemission and RHEED studies of Fe/InAS(100) interfaces

      SURFACE SCIENCE
    5. Rizzi, GA; Petukhov, M; Sambi, M; Zanoni, R; Perriello, L; Granozzi, G
      An X-ray photoelectron diffraction structural characterization of an epitaxial MnO ultrathin film on Pt(111)

      SURFACE SCIENCE
    6. Mewes, T; Rickart, M; Mougin, A; Demokritov, SO; Fassbender, J; Hillebrands, B; Scheib, M
      Comparative study of the epitaxial growth of Cu on MgO(001) and on hydrogen terminated Si(001)

      SURFACE SCIENCE
    7. Pic, N; Glachant, A; Nitsche, S; Hoarau, JY; Goguenheim, D; Vuillaume, D; Sibai, A; Chaneliere, C
      Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx

      SOLID-STATE ELECTRONICS
    8. Mao, LF; Tan, CH; Xu, MZ
      Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current

      SOLID STATE COMMUNICATIONS
    9. Houssa, M; Naili, M; Heyns, M; Stesmans, A
      Charge trapping in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Das Sarma, S; Hwang, EH; Zutic, I
      Interface-charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature-dependent resistivity and 2D 'metallic' behavior

      SUPERLATTICES AND MICROSTRUCTURES
    11. Hartmanova, M; Gmucova, K; Thurzo, I
      Dielectric properties of ceria and yttria-stabilized zirconia thin films grown on silicon substrates

      SOLID STATE IONICS
    12. Rizzi, GA; Zanoni, R; Di Siro, S; Perriello, L; Granozzi, G
      Epitaxial growth of MnO nanoparticles on Pt(111) by reactive deposition ofMn-2(CO)(10)

      SURFACE SCIENCE
    13. Bertoncini, P; Berling, D; Wetzel, P; Mehdaoui, A; Loegel, B; Gewinner, G; Ulhaq-Bouillet, C; Pierron-Bohnes, V
      Epitaxial magnetic Fe layers grown on Si(001) by means of a template method

      SURFACE SCIENCE
    14. Kneppe, M; Dorna, V; Kohstall, P; Kot, E; Kohler, U
      A kinetic scanning tunneling microscopy study of iron silicide growth on Si(113)

      SURFACE SCIENCE
    15. Nienhaus, H; Bergh, HS; Gergen, B; Majumdar, A; Weinberg, WH; McFarland, EW
      Direct detection of electron-hole pairs generated by chemical reactions onmetal surfaces

      SURFACE SCIENCE
    16. Stadler, A; Sulima, T; Schulze, J; Fink, C; Kottantharayil, A; Hansch, W; Baumgartner, H; Eisele, I; Lerch, W
      Dopant diffusion during rapid thermal oxidation

      SOLID-STATE ELECTRONICS
    17. Suga, T; Iizuka, M; Kuniyoshi, S; Kudo, K; Tanaka, K
      Determination of effects of purity and atmospheric gases on electrical properties of perylene thin films by field effect measurement

      SYNTHETIC METALS
    18. Schoonveld, WA; Oostinga, JB; Vrijmoeth, J; Klapwijk, TM
      Charge trapping instabilities of sexithiophene Thin Film Transistors

      SYNTHETIC METALS
    19. Bondarenko, GG; Andreev, VV; Stolyarov, AA
      Method of metal-insulator-semiconductor structure interface analysis

      SURFACE AND INTERFACE ANALYSIS
    20. Imre, A; Gontier-Moya, E; Beke, DL; Szabo, IA; Erdelyi, G
      Ostwald ripening of Pd particles on the (10(1)over-bar(2)over-bar) surfaceof sapphire

      SURFACE SCIENCE
    21. Zhdanov, VP; Kasemo, B
      Substrate-mediated photoinduced chemical reactions on ultrathin metal films

      SURFACE SCIENCE
    22. Ma, P; Anderson, GW; Norton, PR
      An in-situ study of structure and magnetic properties of Fe films on the sulphur passivated Ge(100) surface at 150 degrees C

      SURFACE SCIENCE
    23. Fukuda, H; Namioka, S; Miura, M; Ishikawa, Y; Yoshino, M; Nomura, S
      Structural and electrical properties of crystalline TiO2 thin films formedby metalorganic decomposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. ZHANG ZH; HASEGAWA S; INO S
      EPITAXIAL-GROWTH OF CU ONTO SI(111) SURFACES AT LOW-TEMPERATURE

      Surface science
    25. FUKUDA H; MIURA M; SAKUMA S; NOMURA S
      STRUCTURAL AND ELECTRICAL-PROPERTIES OF CRYSTALLINE CEO2 FILMS FORMEDBY METALORGANIC DECOMPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    26. JARRETT CP; BROWN AR; FRIEND RH; HARRISON MG; DELEEUW DM; HERWIG P; MULLEN K
      FIELD-EFFECT TRANSISTOR STUDIES OF PRECURSOR-PENTACENE THIN-FILMS

      Synthetic metals
    27. BENCHAABANE R; GAMOUDI M; REMAKI B; GUILLAUD G; ELBEQQALI O
      INVESTIGATION OF THE ELECTRICAL-PROPERTIES OF THE METAL-CALIXARENE-SEMICONDUCTOR STRUCTURES

      Thin solid films
    28. PLASS R; MARKS LD
      SUBMONOLAYER AU ON SI(111) PHASE-DIAGRAM

      Surface science
    29. HORTON JH; SHAPTER JG; CHENG T; LENNARD WN; NORTON PR
      STM INVESTIGATION OF A CU ORGANOMETALLIC COMPLEX ADSORBED ON SI(111)-(7X7)

      Surface science
    30. BOTTCHER EH; DROGE E; STRITTMATTER A
      POLARIZATION-INSENSITIVE HIGH-SPEED INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

      Electronics Letters
    31. SEMENCHINSKY S; SMRCKA L; STEHNO J; BORZENETS V
      ANOMALOUS HALL RESISTANCE IN SI(001) HIGH-MOBILITY INVERSION-LAYERS AT HIGH ELECTRON CONCENTRATIONS

      Physics letters. A
    32. SHIMADA T; NISHIKAWA H; KOMA A; FURUKAWA Y; ARAKAWA E; TAKESHITA K; MATSUSHITA T
      POLYTYPES AND CRYSTALLINITY OF ULTRATHIN EPITAXIAL-FILMS OF LAYERED MATERIALS STUDIED WITH GRAZING-INCIDENCE X-RAY-DIFFRACTION

      Surface science
    33. JIMENEZ VM; MEJIAS JA; ESPINOS JP; GONZALEZELIPE AR
      INTERFACE EFFECTS FOR METAL-OXIDE THIN-FILMS DEPOSITED ON ANOTHER METAL-OXIDE .2. SNO2 DEPOSITED ON SIO2

      Surface science
    34. JIMENEZ VM; ESPINOS JP; GONZALEZELIPE AR
      INTERFACE EFFECTS FOR METAL-OXIDE THIN-FILMS DEPOSITED ON ANOTHER METAL-OXIDE .3. SNO AND SNO2 DEPOSITED ON MGO(100) AND THE USE OF CHEMICAL-STATE PLOTS

      Surface science
    35. MINKOV GM; GERMANENKO AV; LARIONOVA VA; RUT OE
      SPIN-ORBIT-SPLITTING OF THE SPECTRUM OF 2D ELECTRONS IN THE SURFACE QUANTUM-WELL OF GAPLESS SEMICONDUCTORS

      Surface science
    36. ALTUKHOV PD
      EXCITONS IN A DENSE 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR SURFACE

      Surface science
    37. PUDALOV VM; DIORIO M; CAMPBELL JW
      ELECTRIC-FIELD-INDUCED NONOHMIC CONDUCTION IN THE 2D INSULATING PHASE

      Surface science
    38. FURNEAUX JE; KRAVCHENKO SV; MASON W; PUDALOV VM; DIORIO M
      SCALING OF A METAL INSULATOR TRANSITION IN A 2D SYSTEM AT B=0/

      Surface science
    39. MASON W; KRAVCHENKO SV; FURNEAUX JE
      EXPERIMENTAL-EVIDENCE OF THE COULOMB GAP IN A HIGH-MOBILITY 2D ELECTRON-SYSTEM IN SILICON

      Surface science
    40. PLASS R; MARKS LD
      ROOM-TEMPERATURE DEPOSITION OF GOLD ONTO THE DIFFUSE AND SHARP DIFFRACTION SPOT SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES AU SURFACES

      Surface science
    41. KOBAYASHI H; NAMBA K; YAMASHITA Y; NAKATO Y; NISHIOKA Y
      INTERFACE STATES IN THE SI BAND-GAP OBTAINED FROM XPS MEASUREMENTS UNDER BIASES

      Surface science
    42. HENZLER M
      GROWTH OF EPITAXIAL MONOLAYERS

      Surface science
    43. AKTSIPETROV OA; FEDYANIN AA; MISHINA ED; RUBTSOV AN; VANHASSELT CW; DEVILLERS MAC; RASING T
      PROBING THE SILICON-SILICON OXIDE INTERFACE OF SI(111)-SIO2-CR MOS STRUCTURES BY DC-ELECTRIC-FIELD-INDUCED 2ND-HARMONIC GENERATION

      Surface science
    44. LU HC; GUSEV EP; GARFUNKEL E; GUSTAFSSON T
      AN ION-SCATTERING STUDY OF THE INTERACTION OF OXYGEN WITH SI(111) - SURFACE ROUGHENING AND OXIDE-GROWTH

      Surface science
    45. SAMBI M; PIN E; SANGIOVANNI G; ZARATIN L; GRANOZZI G; PARMIGIANI F
      PHOTOELECTRON DIFFRACTION STUDY ON THE STRUCTURE OF A VANADIUM ULTRATHIN-FILM DEPOSITED AT THE TIO2(110) SURFACE

      Surface science
    46. HORSTMANN M; SCHIMPF K; MARSO M; FOX A; KORDOS P
      16GHZ BANDWIDTH MSM PHOTODETECTOR AND 45 85GHZ F(T)/F(MAX) HEMT PREPARED ON AN IDENTICAL INGAAS/INP LAYER STRUCTURE/

      Electronics Letters
    47. MATIN MA; SONG KC; ROBINSON BJ; SIMMONS JG; THOMPSON DA; GOUIN F
      VERY-LOW DARK CURRENT INGAP GAAS MSM-PHOTODETECTOR USING SEMITRANSPARENT AND OPAQUE CONTACTS/

      Electronics Letters
    48. VENDIER O; JOKERST NM; LEAVITT RP
      HIGH-EFFICIENCY THIN-FILM GAAS-BASED MSM PHOTODETECTORS

      Electronics Letters
    49. WOHLMUTH WA; FAY P; CANEAU C; ADESIDA I
      LOW DARK CURRENT, LONG-WAVELENGTH METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

      Electronics Letters
    50. YUANG RH; CHYI JI
      EFFECTS OF FINGER WIDTH ON LARGE-AREA INGAAS MSM PHOTODETECTORS

      Electronics Letters
    51. HORSTMANN M; MARSO M; MUTTERSBACH J; SCHIMPF K; KORDOS P
      RESPONSIVITY ENHANCEMENT OF INGAAS BASED MSM PHOTODETECTORS USING 2DEG LAYER SEQUENCE AND SEMITRANSPARENT ELECTRODES

      Electronics Letters
    52. HUANG ZC; WIE CR; NA I; LUO H; MOTT DB; SHU PK
      HIGH-PERFORMANCE ZNSE PHOTOCONDUCTORS

      Electronics Letters
    53. CHEN E; CHOU SY
      WAVELENGTH DETECTOR USING A PAIR OF METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH SUBWAVELENGTH FINGER SPACINGS

      Electronics Letters
    54. BOTTCHER EH; PFITZENMAIER H; DROGE E; BIMBERG D
      MILLIMETER-WAVE COPLANAR WAVE-GUIDE SLOW-WAVE TRANSMISSION-LINES ON INP

      Electronics Letters
    55. HUANG ZC; CHEN JC; MOTT DC; SHU PK
      HIGH-PERFORMANCE GAN LINEAR-ARRAY

      Electronics Letters
    56. STRITTMATTER A; KOLLAKOWSKI S; DROGE E; BOTTCHER EH; BIMBERG D
      HIGH-SPEED, HIGH-EFFICIENCY RESONANT-CAVITY ENHANCED INGAAS MSM PHOTODETECTORS

      Electronics Letters
    57. LAIH LH; CHEN YA; TSAY WC; HONG JW
      HIGH RESPONSIVITY A-SI-H BOTTOM-ELECTRODE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR (BMSM-PD)

      Electronics Letters
    58. KESTLE A; WILKS SP; WESTWOOD DI; KE M; ELLIOTT M
      THE CONTROL AND MODIFICATION OF METAL-SEMICONDUCTOR INTERFACES USING MULTI QUANTUM BARRIERS

      Materials science & engineering. B, Solid-state materials for advanced technology
    59. INOMATA K; YUSU K; SAITO Y
      INTERLAYER COUPLING AND MAGNETORESISTANCE IN FE-SI MULTILAYERS WITH SEMICONDUCTING SPACERS

      Materials science & engineering. B, Solid-state materials for advanced technology
    60. MUKASA K; SUEOKA K; HASEGAWA H; TAZUKE Y; HAYAKAWA K
      SPIN-POLARIZED STM AND ITS FAMILY

      Materials science & engineering. B, Solid-state materials for advanced technology
    61. KOREC J
      SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE, SMART-POWER APPLICATIONS

      Materials science & engineering. B, Solid-state materials for advanced technology
    62. SCHEINERT S; PAASCH G
      TEMPERATURE-DEPENDENCE OF THE THIN-FILM SILICON-ON-INSULATOR FIELD-EFFECT TRANSISTOR CURRENT CHARACTERISTICS BASED ON FULL SOLUTION FOR THEONE-DIMENSIONAL MISIS STRUCTURE

      Materials science & engineering. B, Solid-state materials for advanced technology
    63. IKEDA T; KAWASHIMA Y; ITOH H; ICHINOKAWA T
      SURFACE-STRUCTURES AND GROWTH MODE FOR THE CU SI(110) SURFACES DEPENDING ON HEAT-TREATMENT/

      Surface science
    64. GROENEVELD RHM; PRINS MWJ; VANKEMPEN H
      MODULATED PHOTODETECTION WITH SEMICONDUCTOR TIPS IN A SCANNING TUNNELING MICROSCOPE

      Surface science
    65. KOSHIKAWA T; YASUE T; TANAKA H; SUMITA I; KIDO Y
      SURFACE-STRUCTURE OF CU SI(111) AT HIGH-TEMPERATURE/

      Surface science
    66. VONHOEGEN MH; SCHMIDT T; HENZLER M; MEYER G; WINAU D; RIEDER KH
      EPITAXIAL LAYER GROWTH OF AG(111)-FILMS ON SI(100)

      Surface science
    67. KOBAYASHI H; YAMASHITA Y; MORI T; NAKATO Y; PARK KH; NISHIOKA Y
      ENERGY-DISTRIBUTION OF SURFACE-STATES IN THE SI BAND-GAP FOR MOS DIODES OBTAINED FROM XPS MEASUREMENTS UNDER BIASES

      Surface science
    68. ABUKAWA T; SASAKI M; HISAMATSU F; GOTO T; KINOSHITA T; KAKIZAKI A; KONO S
      SURFACE ELECTRONIC-STRUCTURE OF A SINGLE-DOMAIN SI(111)4X1-IN SURFACE- A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY

      Surface science
    69. FAY P; WOHLMUTH W; CANEAU C; ADESIDA I
      15GHZ MONOLITHIC MODFET-MSM INTEGRATED PHOTORECEIVER OPERATING AT 1.55-MU-M WAVELENGTH

      Electronics Letters
    70. KHALEQUE F
      METAL-INSULATOR-SEMICONDUCTOR STRUCTURES OF INSB SIO2 WITH VERY-LOW INTERFACE-TRAP DENSITY/

      Electronics Letters
    71. LAIH LH; TSAY WC; CHEN YA; JEN TS; YUANG RH; HONG JW
      HIGH-PERFORMANCE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A THIN HYDROGENATED AMORPHOUS-SILICON LAYER ON CRYSTALLINE SILICON

      Electronics Letters
    72. CHU CC; CHAN YJ; YUANG RH; CHYI JI; LEE CT
      PERFORMANCE ENHANCEMENT USING WSIX ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS/

      Electronics Letters
    73. HERRSCHER M; GRUNDMANN M; DROGE E; KOLLAKOWSKI S; BOTTCHER EH; BIMBERG D
      EPITAXIAL LIFTOFF INGAAS INP MSM PHOTODETECTORS ON SI/

      Electronics Letters
    74. SU HD; CHANG SZ; LEE SC; SUN TP
      HIGH-TEMPERATURE INAS INFRARED DETECTOR BASED ON METAL-INSULATOR-SEMICONDUCTOR STRUCTURE

      Electronics Letters
    75. HURM V; BENZ W; BERROTH M; FINK T; FRITZSCHE D; HAUPT M; HOFMANN P; JAKOBUS T; KOHLER K; LUDWIG M; MAUSE K; RAYNOR B; ROSENZWEIG J
      1.3-MU-M MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING AN INGAAS MSM PHOTODIODE AND ALGAAS GAAS HEMTS GROWN ON GAAS/

      Electronics Letters
    76. CHAKRABARTI P; CHANDRA A; GUPTA V; SHAH HS; KUMAR YR
      OPTICALLY CONTROLLED CHARACTERISTICS OF AN ION-IMPLANTED HETERO-MIS CAPACITOR

      IEE proceedings. Optoelectronics
    77. HOILE GA; READER HC
      COMPUTER-AIDED-DESIGN OF AN RF MOSFET POWER-AMPLIFIER

      IEE proceedings. Circuits, devices and systems
    78. BOULKROUN K; OUENNOUGHI Z; BOUZIANE A; BOUGDIRA J; ELBOUABDELLATI M; LEPLEY B
      DETERMINATION OF INTERFACE STATE DENSITY ON AU TA2O5/N-INP STRUCTURESBY DIFFERENT METHODS/

      Materials science & engineering. B, Solid-state materials for advanced technology
    79. HAYASHI T; KAWAZU Y; UCHIYAMA A; FUKUDA H
      HIGHLY RELIABLE FLASH MEMORIES FABRICATED BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING

      IEICE transactions on electronics
    80. CHEN Y; SYMONS DM; LAKRIMI M; SALESSE A; HOUSTON GB; NICHOLAS RJ; MASON NJ; WALKER PJ
      ONE-DIMENSIONAL TRANSPORT AND GATING OF INAS GASB STRUCTURES/

      Superlattices and microstructures
    81. CHYI JI; WEI TS; HONG JW; LIN W; TU YK
      LOW DARK CURRENT AND HIGH LINEARITY INGAAS MSM PHOTODETECTORS

      Electronics Letters
    82. ARAKAWA T; FUKADA H
      EFFECT OF NH3 NITRIDATION ON TIME-DEPENDENT DIELECTRIC-BREAKDOWN CHARACTERISTICS OF HEAVILY OXYNITRIDED TUNNEL OXIDE-FILMS

      Electronics Letters
    83. LING CH; AH LK; YEOW YT
      OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR

      Electronics Letters
    84. TONG F; LI CS; HO KP; KWARK YH; DOANY F
      CAPACITIVE LOADING OF OPTICAL ELECTRONIC WAVELENGTH SELECTOR FOR WDMANETWORKS/

      Electronics Letters
    85. YONEYAMA M; SHIBATA T
      DIFFERENTIAL MSM PHOTOCONDUCTIVE-SWITCH-TYPE SAMPLE-AND-HOLD CIRCUIT FOR REDUCING SIGNAL FEEDTHROUGH

      Electronics Letters
    86. DROGE E; SCHANBEL RF; BOTTCHER EH; GRUNDMANN M; KROST A; BIMBERG D
      HIGH-SPEED INGAAS ON SI METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

      Electronics Letters
    87. HIERONYMI F; BOTTCHER EH; DROGE E; KUHL D; KOLLAKOWSKI S; BIMBERG D
      LARGE-AREA LOW-CAPACITANCE INP INGAAS MSM PHOTODETECTORS FOR HIGH-SPEED OPERATION UNDER FRONT AND REAR ILLUMINATION/

      Electronics Letters
    88. TODSEN JL; AUGIER P; SCHRIMPF RD; GALLOWAY KF
      1 F NOISE AND INTERFACE TRAP DENSITY IN HIGH-FIELD STRESSED PMOS TRANSISTORS/

      Electronics Letters
    89. QUICK J; SCHLEY P
      IMPROVED TRIANGULAR VOLTAGE SWEEP (TVS) TECHNIQUE FOR MEASUREMENT OF IONIC CHARGE IN MOS STRUCTURES

      Electronics Letters
    90. FUKUDA H; HAYASHI T; UCHIYAMA A; IWABUCHI T
      DETERMINATION OF TRAPPED OXIDE CHARGE IN FLASH-TYPE EEPROMS WITH HEAVILY OXYNITRIDED TUNNEL OXIDE-FILMS

      Electronics Letters


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Documento generato il 10/08/20 alle ore 08:39:21