Si mostrano 100 riferimenti a partire da 1 |

Per ulteriori informazioni selezionare i riferimenti di interesse.

- Ellinger, F; Vogt, R; Bachtold, W

Ultra compact, low loss, varactor tuned phase shifter MMIC at C-band*IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS*

- Devabhaktuni, VK; Yagoub, MCE; Fang, YH; Xu, JJ; Zhang, QJ

Neural networks for microwave modeling: Model development issues and nonlinear modeling techniques*INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING*

- Lazaro, M; Santamaria, I; Pantaleon, C; Sanchez, AM; Puente, AT; Fernandez, T

Smoothing the canonical piecewise-linear model: An efficient and derivablelarge-signal model for MESFET/HEMT transistors*IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS*

- Seelmann-Eggebert, M; Meisen, P; Schaudel, F; Koidl, P; Vescan, A; Leier, H

Heat-spreading diamond films for GaN-based high-power transistor devices*DIAMOND AND RELATED MATERIALS*

- Bertilsson, K; Dubaric, E; Nilsson, HE; Hjelm, M; Petersson, CS

Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC*DIAMOND AND RELATED MATERIALS*

- Borges, RP; Bari, M; Coey, JMD; Gregg, JF; Thornton, M; Allen, W

Versatile radiofrequency sensor*SENSORS AND ACTUATORS A-PHYSICAL*

- Yanagawa, S

Nonlinear analysis of multiple ion-implanted GaAsFETs using volterra series approach*IEICE TRANSACTIONS ON ELECTRONICS*

- Ahn, KH; Lee, SH; Jeong, YH

Effects of source and load impedance on the intermodulation distortion products of GaAsFETs*IEICE TRANSACTIONS ON ELECTRONICS*

- Alsunaidi, MA; Kuwayama, T; Kawasaki, S

Numerical characterization of optically controlled MESFETs using an energy-dependent physical simulation model*IEICE TRANSACTIONS ON ELECTRONICS*

- Fujii, K; Ghannouchi, FM; Yakabe, T; Yabe, H

A comprehensive nonlinear GaAsFET model suitable for active and passive circuits design*IEICE TRANSACTIONS ON ELECTRONICS*

- Singh, A; Bose, S; Gupta, M; Gupta, RS

Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Meng, CC; Chen, JW; Liu, SJ

Ion-implanted planar-gate GaAs MESFET optimized for single-voltage-supply operation*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Kabbaj, H; Zimmermann, J

Time-domain study of lossy nonuniform multiconductor transmission lines with complex nonlinear loads*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Ooi, BL; Ma, JY; Leong, MS

A new MESFET nonlinear model*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Cicolani, M; Di Martino, A; D'Innocenzo, S; Pisa, S; Tommasino, P; Trifiletti, A

A new instantaneous model of MESFET and HEMT devices for large-signal circuit design*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Kim, Y; Yi, J; Yang, YG; Kim, B

A novel extraction method for the higher order components of channel current in a GaAs MESFET*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Zamanillo, JM; Navarro, C; Perez-Vega, C; Mediavilla, A; Tazon, A

Large-signal model predicts dynamic behavior of GaAs MESFET model under optical illumination*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Ma, JG; Lee, TH; Yeo, KS; Do, MA

New small-signal model for HEMTs and MESFETs*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Pronic, O; Markovic, V; Males-Ilic, N

The wave approach to noise modeling of microwave transistors by including the correlation effect*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Huang, CC

On the nonlinear distortion of QPSK-based digital modulation signals in microwave MESFET amplifiers*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Alsunaidi, MA

Numerical investigations of optically induced gunn oscillations in MESFET-like structures*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Ajram, S; Salmer, G

Ultrahigh frequency DC-to-DC converters using GaAs power switches*IEEE TRANSACTIONS ON POWER ELECTRONICS*

- Taniuchi, H; Umezawa, H; Arima, T; Tachiki, M; Kawarada, H

High-frequency performance of diamond field-effect transistor*IEEE ELECTRON DEVICE LETTERS*

- Abouchabaka, J; Aboulaich, R; Guennoun, O; Nachaoui, A; Souissi, A

Shape optimization for a simulation of a semiconductor problem*MATHEMATICS AND COMPUTERS IN SIMULATION*

- Chiu, CH; Parmiter, PJM; Hilton, K; Uren, MJ; Swanson, JG

Observations of deep levels in 4H-SiC using optoelectronic modulation spectroscopy*JOURNAL OF ELECTRONIC MATERIALS*

- Lee, CC; Wu, LW; Chi, GC

Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs*NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS*

- Luo, B; Johnson, JW; Schoenfeld, D; Pearton, SJ; Ren, F

Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures*SOLID-STATE ELECTRONICS*

- Bose, S; Gupta, M; Gupta, RS

I-d-V-d characteristics of optically biased short channel GaAs MESFET*MICROELECTRONICS JOURNAL*

- McNally, PJ; Daniels, B

Compact DC model for submicron GaAs MESFETs including gate-source modulation effects*MICROELECTRONICS JOURNAL*

- Bose, S; Adarsh; Kumar, A; Simrata; Gupta, M; Gupta, RS

A complete analytical model of GaN MESFET for microwave frequency applications*MICROELECTRONICS JOURNAL*

- Kazi, ZI; Egawa, T; Umeno, M; Jimbo, T

Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers*JOURNAL OF APPLIED PHYSICS*

- Lai, YL; Hsu, KH

A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Rodriguez-Tellez, J; Fernandez, T; Mediavilla, A; Tazon, A

Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Ellinger, F; Vogt, R; Bachtold, W

Compact reflective-type phase-shifter MMIC for C-band using a lumped-element coupler*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Leifso, C; Haslett, JW

A fully integrated active inductor with independent voltage tunable inductance and series-loss resistance*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Zirath, H; Fager, C; Garcia, M; Sakalas, P; Landen, L; Alping, A

Analog MMICs for millimeter-wave applications based on a commercial 0.14-mu m pHEMT technology*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Verma, MK; Pal, BB

Analysis of buried gate MESFET under dark and illumination*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Liu, WC; Yu, KH; Lin, KW; Tsai, JH; Wu, CZ; Lin, KP; Yen, CH

On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Chen, CY; Chang, EY; Chang, L; Chen, SH

Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Ahmed, MM

Schottky barrier depletion modification - A source of output conductance in submicron GaAs MESFETs*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Polyakov, VM; Schwierz, F

Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Hietala, VM; Chun, C; Laskar, J; Choquette, KD; Geib, KM; Allerman, AA; Hindi, JJ

Two-dimensional 8 x 8 photoreceiver array and VCSEL drivers for high-throughput optical data links*IEEE JOURNAL OF SOLID-STATE CIRCUITS*

- Cheung, TS; Lee, BC; Choi, EC; Choi, WY

A 1.8 similar to 3.2-GHz fully differential GaAs MESFET PLL*IEEE JOURNAL OF SOLID-STATE CIRCUITS*

- Tsugawa, K; Umezawa, H; Kawarada, H

Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation*JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS*

- Hsin, YM; Hsueh, KP; Hsu, CJ; Wu, LW

GaAs metal-semiconductor field-effect transistor with surface oxygen implantation*JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS*

- Kuroda, M

Reliability improvement of Al-gate power GaAs-MESFET*ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS*

- Codreanu, C; Avram, M; Carbunescu, E; Iliescu, E

Comparison of 3C-SiC, 6H-SiC and 4H-SiC MESFETs performances*MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING*

- Rizzoli, V; Costanzo, A

An accurate bilateral FET model suitable for general nonlinear and power applications*INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING*

- Jokerst, NM; Brooke, MA; Laskar, J; Wills, DS; Brown, AS; Vrazel, M; Jung, S; Joo, Y; Chang, JJ

Microsystem optoelectronic integration for mixed multisignal systems*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Jerome, JW

Analytical and computational advances for hydrodynamic models of classicaland quantum charge transport*VLSI DESIGN*

- Gaquiere, C; Trassaert, S; Boudart, B; Crosnier, Y

High-power GaN MESFET on sapphire substrate*IEEE MICROWAVE AND GUIDED WAVE LETTERS*

- Haskins, C; Winslow, T; Raman, S

FET diode linearizer optimization for amplifier predistortion in digital radios*IEEE MICROWAVE AND GUIDED WAVE LETTERS*

- Takai, N; Fujii, N

GaAsFET current-mode integrators and their application to filters*ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING*

- Lee, CT; Shyu, KC; Lin, IJ; Lin, HH

GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer*MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY*

- Fujii, K; Hara, Y; Ghannouchi, FM; Yakabe, T; Yabe, H

A nonlinear GaAsFET model suitable for active and passive MM-wave applications*IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES*

- Cole, EAB; Snowden, CM

The mathematical and computer modelling of microwave semiconductor devices*MATHEMATICAL AND COMPUTER MODELLING*

- Crespo, C; Dorta, P; Alonso, JI; Perez, F

A simple approach to design optimum noise-matching networks for optical receivers*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Bose, S; Gupta, M; Gupta, RS

Cutoff frequency and optimum noise figure of GaAs optically controlled FET*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Madheswaran, M; Rajamani, V; Chakrabarti, P

Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Navarro, C; Zamanillo, JM; Mediavilla, A; Tazon, A; Garcia, JL

New optical capacitance model for GaAs MESFETs*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Alsunaidi, MA

Energy model for optically controlled MESFETs*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Di Martino, A; Dutisseuil, E; Ladner, C; Pisa, S; Tommasino, P; Trifiletti, A

A new procedure for the extraction of a multibias linear model for MESFETsand HEMTs*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Xiao, Q; Ooi, BL; Ma, J

A new accurate model for drain-gate avalanche current source of GaAs MESFET*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Xiao, Q; Ooi, BL; Ma, J

An improved Chalmers model for a GaAs MESFET*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Chelouah, A; Algani, C; Alquie, G

Improved current mirror for increasing phase margin of X-band GaAs pseudo-operational amplifiers*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Centurelli, F; Pisa, S; Tommasino, P; Trifiletti, A

A novel bias-dependent rational model for MESFET and HEMT devices*MICROWAVE AND OPTICAL TECHNOLOGY LETTERS*

- Zhang, NQ; Keller, S; Parish, G; Heikman, S; DenBaars, SP; Mishra, UK

High breakdown GaNHEMT with overlapping gate structure*IEEE ELECTRON DEVICE LETTERS*

- Kim, DM; Kim, HJ; Lee, JI; Lee, YJ

Comparison of photoresponsive drain conduction and gate leakage in N-channel pseudomorphic HEMT and MESFET under electro-optical stimulations*IEEE ELECTRON DEVICE LETTERS*

- Roy, NS; Pal, BB

Frequency-dependent OPFET characteristics with improved absorption under back illumination*JOURNAL OF LIGHTWAVE TECHNOLOGY*

- Roy, NS; Pal, BB; Khan, RU

Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination*JOURNAL OF LIGHTWAVE TECHNOLOGY*

- Scheinberg, N; Pinkhasov, A

A computer simulation model for simulating distortion in FET resistors*IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS*

- Della Corte, FG

Simulation study of the DC and AC characteristics of an a-Si : H(n)/GaAs(p)/CaAs(n) heterojunction bipolar transistor*SOLID-STATE ELECTRONICS*

- Lee, CT; Huang, JH; Tsai, CD

Nonalloyed GaAs metal-semiconductor field effect transistor*SOLID-STATE ELECTRONICS*

- Yamada, Y; Hasegawa, M

Evaluation of electron pressure effect in low-field drain region of submicron GaAs MESFET using ensemble Monte Carlo simulation*MICROELECTRONICS JOURNAL*

- Singh, PK; Pal, BB

Effect of signal modulated optical illumination on the Schrodinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics*JOURNAL OF APPLIED PHYSICS*

- Hori, Y; Kuzuhara, M; Ando, Y; Mizuta, M

Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate*JOURNAL OF APPLIED PHYSICS*

- Rao, RVVVJ; Chong, TC; Tan, LS; Lau, WS

Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate ins.*IEEE TRANSACTIONS ON RELIABILITY*

- Pantoja, JMM; Lin, CI; Shaalan, M; Sebastian, JL; Hartnagel, HL

Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- O'Ciardha, E; Lidholm, SU; Lyons, B

Generic-device frequency-multiplier analysis - A unified approach*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Leifso, C; Haslett, JW; McRory, JG

Monolithic tunable active inductor with independent Q control*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- van Niekerk, C; Meyer, P; Schreurs, DMMP; Winson, PB

A robust integrated multibias parameter-extraction method for MESFET and HEMT models*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Cheng, KKM; Chan, KP

Power optimization of high-efficiency microwave MESFET oscillators*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Fernandez-Barciela, M; Tasker, PJ; Campos-Roca, Y; Demmler, M; Massler, H; Sanchez, E; Curras-Francos, MC; Schlechtweg, M

A simplified broad-band large-signal nonquasi-static table-based FET model*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Sriram, S; Smith, TJ

Reduction of common-source inductance in FET/HEMT structures utilizing wave-propagation effects*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Fujii, K; Hara, Y; Yakabe, T; Yabe, H

A large-signal switching MESFET model for intermodulation distortion analysis*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Dallas, PA; Everard, JKA

Characterization of flicker noise in GaAs MESFET's for oscillator applications*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Matinpour, B; Chakraborty, S; Laskar, J

Novel DC-offset cancellation techniques for even-harmonic direct conversion receivers*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Ellinger, F; Vogt, R; Bachtold, W

Calibratable adaptive antenna combiner at 5.2 GHz with high yield for laptop interface card*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Yhland, K; Rorsman, N; Garcia, M; Merkel, HF

A symmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Van den Bosch, S; Martens, L

Experimental verification of pattern selection for noise characterization*IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES*

- Hafdallah, H; Ouslimani, A; Adde, R; Vernet, G; Crozat, P

Feasibility of picosecond electrical sampling using GaAsFET*IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT*

- Shirokov, MS; Leoni, RE; Bao, JW; Hwang, JCM

A transient SPICE model for digitally modulated RF characteristics of ion-implanted GaAs MESFET's*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Chang, EY; Fuh, CS; Meng, CC; Wang, KB; Chen, SH

A planar gate double beryllium implanted GaAs power MESFET for low voltagedigital wireless communication application*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Leifso, C; Haslett, JW

An analytic model for estimating the length of the velocity saturated region in GaAs MESFET's*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Farahmand, M; Brennan, KF

Comparison between wurtzite phase and zincblende phase GaN MESFET's using a full band Monte Carlo simulation*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Leoni, RE; Bao, JW; Bu, JK; Du, XH; Shirokov, MS; Hwang, JCM

Mechanism for recoverable power drift in PHEMT's*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Horio, K; Wakabayashi, A; Yamada, T

Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFET's*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Dhar, S; Balakrishnan, VR; Kumar, V; Ghosh, S

Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Ahmed, MM

Optimization of active channel thickness of mm-wavelength GaAs MESFET's byusing a nonlinear I-V model*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Nakajima, S; Yanagisawa, M; Tsumura, E; Sakurada, T

On the frequency dependent drain conductance of ion-implanted GaAs MESFETs*IEEE TRANSACTIONS ON ELECTRON DEVICES*

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici

Documento generato il 22/10/20 alle ore 06:34:13