Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'MESFET' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 413 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Ellinger, F; Vogt, R; Bachtold, W
      Ultra compact, low loss, varactor tuned phase shifter MMIC at C-band

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    2. Devabhaktuni, VK; Yagoub, MCE; Fang, YH; Xu, JJ; Zhang, QJ
      Neural networks for microwave modeling: Model development issues and nonlinear modeling techniques

      INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
    3. Lazaro, M; Santamaria, I; Pantaleon, C; Sanchez, AM; Puente, AT; Fernandez, T
      Smoothing the canonical piecewise-linear model: An efficient and derivablelarge-signal model for MESFET/HEMT transistors

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
    4. Seelmann-Eggebert, M; Meisen, P; Schaudel, F; Koidl, P; Vescan, A; Leier, H
      Heat-spreading diamond films for GaN-based high-power transistor devices

      DIAMOND AND RELATED MATERIALS
    5. Bertilsson, K; Dubaric, E; Nilsson, HE; Hjelm, M; Petersson, CS
      Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

      DIAMOND AND RELATED MATERIALS
    6. Borges, RP; Bari, M; Coey, JMD; Gregg, JF; Thornton, M; Allen, W
      Versatile radiofrequency sensor

      SENSORS AND ACTUATORS A-PHYSICAL
    7. Yanagawa, S
      Nonlinear analysis of multiple ion-implanted GaAsFETs using volterra series approach

      IEICE TRANSACTIONS ON ELECTRONICS
    8. Ahn, KH; Lee, SH; Jeong, YH
      Effects of source and load impedance on the intermodulation distortion products of GaAsFETs

      IEICE TRANSACTIONS ON ELECTRONICS
    9. Alsunaidi, MA; Kuwayama, T; Kawasaki, S
      Numerical characterization of optically controlled MESFETs using an energy-dependent physical simulation model

      IEICE TRANSACTIONS ON ELECTRONICS
    10. Fujii, K; Ghannouchi, FM; Yakabe, T; Yabe, H
      A comprehensive nonlinear GaAsFET model suitable for active and passive circuits design

      IEICE TRANSACTIONS ON ELECTRONICS
    11. Singh, A; Bose, S; Gupta, M; Gupta, RS
      Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    12. Meng, CC; Chen, JW; Liu, SJ
      Ion-implanted planar-gate GaAs MESFET optimized for single-voltage-supply operation

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    13. Kabbaj, H; Zimmermann, J
      Time-domain study of lossy nonuniform multiconductor transmission lines with complex nonlinear loads

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    14. Ooi, BL; Ma, JY; Leong, MS
      A new MESFET nonlinear model

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    15. Cicolani, M; Di Martino, A; D'Innocenzo, S; Pisa, S; Tommasino, P; Trifiletti, A
      A new instantaneous model of MESFET and HEMT devices for large-signal circuit design

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    16. Kim, Y; Yi, J; Yang, YG; Kim, B
      A novel extraction method for the higher order components of channel current in a GaAs MESFET

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    17. Zamanillo, JM; Navarro, C; Perez-Vega, C; Mediavilla, A; Tazon, A
      Large-signal model predicts dynamic behavior of GaAs MESFET model under optical illumination

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    18. Ma, JG; Lee, TH; Yeo, KS; Do, MA
      New small-signal model for HEMTs and MESFETs

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    19. Pronic, O; Markovic, V; Males-Ilic, N
      The wave approach to noise modeling of microwave transistors by including the correlation effect

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    20. Huang, CC
      On the nonlinear distortion of QPSK-based digital modulation signals in microwave MESFET amplifiers

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    21. Alsunaidi, MA
      Numerical investigations of optically induced gunn oscillations in MESFET-like structures

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    22. Ajram, S; Salmer, G
      Ultrahigh frequency DC-to-DC converters using GaAs power switches

      IEEE TRANSACTIONS ON POWER ELECTRONICS
    23. Taniuchi, H; Umezawa, H; Arima, T; Tachiki, M; Kawarada, H
      High-frequency performance of diamond field-effect transistor

      IEEE ELECTRON DEVICE LETTERS
    24. Abouchabaka, J; Aboulaich, R; Guennoun, O; Nachaoui, A; Souissi, A
      Shape optimization for a simulation of a semiconductor problem

      MATHEMATICS AND COMPUTERS IN SIMULATION
    25. Chiu, CH; Parmiter, PJM; Hilton, K; Uren, MJ; Swanson, JG
      Observations of deep levels in 4H-SiC using optoelectronic modulation spectroscopy

      JOURNAL OF ELECTRONIC MATERIALS
    26. Lee, CC; Wu, LW; Chi, GC
      Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    27. Luo, B; Johnson, JW; Schoenfeld, D; Pearton, SJ; Ren, F
      Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures

      SOLID-STATE ELECTRONICS
    28. Bose, S; Gupta, M; Gupta, RS
      I-d-V-d characteristics of optically biased short channel GaAs MESFET

      MICROELECTRONICS JOURNAL
    29. McNally, PJ; Daniels, B
      Compact DC model for submicron GaAs MESFETs including gate-source modulation effects

      MICROELECTRONICS JOURNAL
    30. Bose, S; Adarsh; Kumar, A; Simrata; Gupta, M; Gupta, RS
      A complete analytical model of GaN MESFET for microwave frequency applications

      MICROELECTRONICS JOURNAL
    31. Kazi, ZI; Egawa, T; Umeno, M; Jimbo, T
      Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers

      JOURNAL OF APPLIED PHYSICS
    32. Lai, YL; Hsu, KH
      A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    33. Rodriguez-Tellez, J; Fernandez, T; Mediavilla, A; Tazon, A
      Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    34. Ellinger, F; Vogt, R; Bachtold, W
      Compact reflective-type phase-shifter MMIC for C-band using a lumped-element coupler

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    35. Leifso, C; Haslett, JW
      A fully integrated active inductor with independent voltage tunable inductance and series-loss resistance

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    36. Zirath, H; Fager, C; Garcia, M; Sakalas, P; Landen, L; Alping, A
      Analog MMICs for millimeter-wave applications based on a commercial 0.14-mu m pHEMT technology

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    37. Verma, MK; Pal, BB
      Analysis of buried gate MESFET under dark and illumination

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    38. Liu, WC; Yu, KH; Lin, KW; Tsai, JH; Wu, CZ; Lin, KP; Yen, CH
      On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    39. Chen, CY; Chang, EY; Chang, L; Chen, SH
      Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    40. Ahmed, MM
      Schottky barrier depletion modification - A source of output conductance in submicron GaAs MESFETs

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    41. Polyakov, VM; Schwierz, F
      Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    42. Hietala, VM; Chun, C; Laskar, J; Choquette, KD; Geib, KM; Allerman, AA; Hindi, JJ
      Two-dimensional 8 x 8 photoreceiver array and VCSEL drivers for high-throughput optical data links

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    43. Cheung, TS; Lee, BC; Choi, EC; Choi, WY
      A 1.8 similar to 3.2-GHz fully differential GaAs MESFET PLL

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    44. Tsugawa, K; Umezawa, H; Kawarada, H
      Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    45. Hsin, YM; Hsueh, KP; Hsu, CJ; Wu, LW
      GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    46. Kuroda, M
      Reliability improvement of Al-gate power GaAs-MESFET

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    47. Codreanu, C; Avram, M; Carbunescu, E; Iliescu, E
      Comparison of 3C-SiC, 6H-SiC and 4H-SiC MESFETs performances

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    48. Rizzoli, V; Costanzo, A
      An accurate bilateral FET model suitable for general nonlinear and power applications

      INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
    49. Jokerst, NM; Brooke, MA; Laskar, J; Wills, DS; Brown, AS; Vrazel, M; Jung, S; Joo, Y; Chang, JJ
      Microsystem optoelectronic integration for mixed multisignal systems

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    50. Jerome, JW
      Analytical and computational advances for hydrodynamic models of classicaland quantum charge transport

      VLSI DESIGN
    51. Gaquiere, C; Trassaert, S; Boudart, B; Crosnier, Y
      High-power GaN MESFET on sapphire substrate

      IEEE MICROWAVE AND GUIDED WAVE LETTERS
    52. Haskins, C; Winslow, T; Raman, S
      FET diode linearizer optimization for amplifier predistortion in digital radios

      IEEE MICROWAVE AND GUIDED WAVE LETTERS
    53. Takai, N; Fujii, N
      GaAsFET current-mode integrators and their application to filters

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    54. Lee, CT; Shyu, KC; Lin, IJ; Lin, HH
      GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    55. Fujii, K; Hara, Y; Ghannouchi, FM; Yakabe, T; Yabe, H
      A nonlinear GaAsFET model suitable for active and passive MM-wave applications

      IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES
    56. Cole, EAB; Snowden, CM
      The mathematical and computer modelling of microwave semiconductor devices

      MATHEMATICAL AND COMPUTER MODELLING
    57. Crespo, C; Dorta, P; Alonso, JI; Perez, F
      A simple approach to design optimum noise-matching networks for optical receivers

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    58. Bose, S; Gupta, M; Gupta, RS
      Cutoff frequency and optimum noise figure of GaAs optically controlled FET

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    59. Madheswaran, M; Rajamani, V; Chakrabarti, P
      Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    60. Navarro, C; Zamanillo, JM; Mediavilla, A; Tazon, A; Garcia, JL
      New optical capacitance model for GaAs MESFETs

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    61. Alsunaidi, MA
      Energy model for optically controlled MESFETs

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    62. Di Martino, A; Dutisseuil, E; Ladner, C; Pisa, S; Tommasino, P; Trifiletti, A
      A new procedure for the extraction of a multibias linear model for MESFETsand HEMTs

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    63. Xiao, Q; Ooi, BL; Ma, J
      A new accurate model for drain-gate avalanche current source of GaAs MESFET

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    64. Xiao, Q; Ooi, BL; Ma, J
      An improved Chalmers model for a GaAs MESFET

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    65. Chelouah, A; Algani, C; Alquie, G
      Improved current mirror for increasing phase margin of X-band GaAs pseudo-operational amplifiers

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    66. Centurelli, F; Pisa, S; Tommasino, P; Trifiletti, A
      A novel bias-dependent rational model for MESFET and HEMT devices

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    67. Zhang, NQ; Keller, S; Parish, G; Heikman, S; DenBaars, SP; Mishra, UK
      High breakdown GaNHEMT with overlapping gate structure

      IEEE ELECTRON DEVICE LETTERS
    68. Kim, DM; Kim, HJ; Lee, JI; Lee, YJ
      Comparison of photoresponsive drain conduction and gate leakage in N-channel pseudomorphic HEMT and MESFET under electro-optical stimulations

      IEEE ELECTRON DEVICE LETTERS
    69. Roy, NS; Pal, BB
      Frequency-dependent OPFET characteristics with improved absorption under back illumination

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    70. Roy, NS; Pal, BB; Khan, RU
      Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    71. Scheinberg, N; Pinkhasov, A
      A computer simulation model for simulating distortion in FET resistors

      IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
    72. Della Corte, FG
      Simulation study of the DC and AC characteristics of an a-Si : H(n)/GaAs(p)/CaAs(n) heterojunction bipolar transistor

      SOLID-STATE ELECTRONICS
    73. Lee, CT; Huang, JH; Tsai, CD
      Nonalloyed GaAs metal-semiconductor field effect transistor

      SOLID-STATE ELECTRONICS
    74. Yamada, Y; Hasegawa, M
      Evaluation of electron pressure effect in low-field drain region of submicron GaAs MESFET using ensemble Monte Carlo simulation

      MICROELECTRONICS JOURNAL
    75. Singh, PK; Pal, BB
      Effect of signal modulated optical illumination on the Schrodinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics

      JOURNAL OF APPLIED PHYSICS
    76. Hori, Y; Kuzuhara, M; Ando, Y; Mizuta, M
      Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate

      JOURNAL OF APPLIED PHYSICS
    77. Rao, RVVVJ; Chong, TC; Tan, LS; Lau, WS
      Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate ins.

      IEEE TRANSACTIONS ON RELIABILITY
    78. Pantoja, JMM; Lin, CI; Shaalan, M; Sebastian, JL; Hartnagel, HL
      Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    79. O'Ciardha, E; Lidholm, SU; Lyons, B
      Generic-device frequency-multiplier analysis - A unified approach

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    80. Leifso, C; Haslett, JW; McRory, JG
      Monolithic tunable active inductor with independent Q control

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    81. van Niekerk, C; Meyer, P; Schreurs, DMMP; Winson, PB
      A robust integrated multibias parameter-extraction method for MESFET and HEMT models

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    82. Cheng, KKM; Chan, KP
      Power optimization of high-efficiency microwave MESFET oscillators

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    83. Fernandez-Barciela, M; Tasker, PJ; Campos-Roca, Y; Demmler, M; Massler, H; Sanchez, E; Curras-Francos, MC; Schlechtweg, M
      A simplified broad-band large-signal nonquasi-static table-based FET model

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    84. Sriram, S; Smith, TJ
      Reduction of common-source inductance in FET/HEMT structures utilizing wave-propagation effects

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    85. Fujii, K; Hara, Y; Yakabe, T; Yabe, H
      A large-signal switching MESFET model for intermodulation distortion analysis

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    86. Dallas, PA; Everard, JKA
      Characterization of flicker noise in GaAs MESFET's for oscillator applications

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    87. Matinpour, B; Chakraborty, S; Laskar, J
      Novel DC-offset cancellation techniques for even-harmonic direct conversion receivers

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    88. Ellinger, F; Vogt, R; Bachtold, W
      Calibratable adaptive antenna combiner at 5.2 GHz with high yield for laptop interface card

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    89. Yhland, K; Rorsman, N; Garcia, M; Merkel, HF
      A symmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    90. Van den Bosch, S; Martens, L
      Experimental verification of pattern selection for noise characterization

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    91. Hafdallah, H; Ouslimani, A; Adde, R; Vernet, G; Crozat, P
      Feasibility of picosecond electrical sampling using GaAsFET

      IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
    92. Shirokov, MS; Leoni, RE; Bao, JW; Hwang, JCM
      A transient SPICE model for digitally modulated RF characteristics of ion-implanted GaAs MESFET's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    93. Chang, EY; Fuh, CS; Meng, CC; Wang, KB; Chen, SH
      A planar gate double beryllium implanted GaAs power MESFET for low voltagedigital wireless communication application

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    94. Leifso, C; Haslett, JW
      An analytic model for estimating the length of the velocity saturated region in GaAs MESFET's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    95. Farahmand, M; Brennan, KF
      Comparison between wurtzite phase and zincblende phase GaN MESFET's using a full band Monte Carlo simulation

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    96. Leoni, RE; Bao, JW; Bu, JK; Du, XH; Shirokov, MS; Hwang, JCM
      Mechanism for recoverable power drift in PHEMT's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    97. Horio, K; Wakabayashi, A; Yamada, T
      Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFET's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    98. Dhar, S; Balakrishnan, VR; Kumar, V; Ghosh, S
      Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    99. Ahmed, MM
      Optimization of active channel thickness of mm-wavelength GaAs MESFET's byusing a nonlinear I-V model

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    100. Nakajima, S; Yanagisawa, M; Tsumura, E; Sakurada, T
      On the frequency dependent drain conductance of ion-implanted GaAs MESFETs

      IEEE TRANSACTIONS ON ELECTRON DEVICES


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/10/20 alle ore 06:34:13