Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'MBE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 2083 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Dong, JW; Lu, J; Xie, JQ; Chen, LC; James, RD; McKernan, S; Palmstrom, CJ
      MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs

      PHYSICA E
    2. Grange, W; Ulhaq-Bouillet, C; Maret, M; Thibault, J
      Chemical long-range ordering in a CoPt alloy film grown by molecular beam epitaxy

      ACTA MATERIALIA
    3. Fastenau, JM; Liu, WK; Fang, XM; Lubyshev, DI; Pelzel, RI; Yurasits, TR; Stewart, TR; Lee, JH; Li, SS; Tidrow, MZ
      Commercial production of QWIP wafers by molecular beam epitaxy

      INFRARED PHYSICS & TECHNOLOGY
    4. Fu, WB; Venkat, R; Meyyappan, M
      Theoretical study of GaN molecular beam epitaxy growth using electron cyclotron resonance nitrogen plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    5. Selamet, Y; Grein, CH; Lee, TS; Sivananthan, S
      Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    6. Phillips, J; Edwall, D; Lee, D; Arias, J
      Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Anantathanasarn, S; Hasegawa, H
      Surface passivation of GaAs using an ultrathin cubic GaN interface controllayer

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    8. Nikiforov, AI; Cherepanov, VA; Pchelyakov, OP
      Investigation of Ge film growth on the Si(100) surface by recording diffractometry

      SEMICONDUCTORS
    9. Sidorov, YG; Dvoretskii, SA; Varavin, VS; Mikhailov, NN; Yakushev, MV; Sabinina, IV
      Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

      SEMICONDUCTORS
    10. Park, BE; Ishiwara, H
      Fabrication of PZT films on Si substrates by sol-gel method using Y2O3 buffer layers

      INTEGRATED FERROELECTRICS
    11. Terada, N; Ikegawa, S; Motoi, Y; Obara, K; Ihara, H
      Photoemission study of chemical bond nature of Pb-3212 epitaxial films

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    12. Wu, Y; Wang, SL; Chen, L; Yu, MF; Qiao, YM; He, L
      Indium doping on MBE grown HgCdTe

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    13. Zheng, XH; Qu, B; Wang, YT; Dai, ZZ; Yang, H; Liang, JW
      Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) byAPCVD

      SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
    14. Miao, ZL; Chen, PP; Lu, W; Xu, WL; Li, ZF; Cai, WY; Shi, GL; Shen, XC
      In-situ photo-modulated reflectance study on GaAs/AlxGa1-xAs single surface quantum wells

      ACTA PHYSICA SINICA
    15. Yang, MJ; Meyer, JR; Bewley, WW; Felix, CL; Vurgaftman, I; Barvosa-Carter, W; Whitman, LJ; Bartolo, RE; Stokes, DW; Lee, H; Martinelli, RU
      Type-II antimonide quantum wells for mid-infrared lasers

      OPTICAL MATERIALS
    16. Schlom, DG; Haeni, JH; Lettieri, J; Theis, CD; Tian, W; Jiang, JC; Pan, XQ
      Oxide nano-engineering using MBE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    17. Stringfellow, GB
      Fundamental aspects of organometallic vapor phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    18. Georgakilas, A; Czigany, Z; Amimer, K; Davydov, VY; Toth, L; Pecz, B
      MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    19. Vezian, S; Massies, J; Semond, F; Grandjean, N
      Surface morphology of GaN grown by molecular beam epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    20. Gallart, M; Morel, A; Taliercio, T; Lefebvre, P; Gil, B; Allegre, J; Mathieu, H; Grandjean, N; Massies, J; Grzegory, I; Porowsky, S
      Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    21. Dalmasso, S; Damilano, B; Grandjean, N; Massies, J; Leroux, M; Reverchon, JL; Duboz, JY
      Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    22. Stepikhova, M; Andreev, B; Krasil'nik, Z; Soldatkin, A; Kuznetsov, V; Gusev, O
      Uniformly and selectively doped silicon : erbium structures produced by the sublimation MBE method

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    23. Mikhailov, NN; Rykhlitski, SV; Spesivtsev, EV; Dulin, SA; Nazarov, NI; Sidorov, YG; Dvoretsky, SA
      Integrated analytical equipment for control of film growth in MBE technology

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    24. Hasegawa, H; Takahashi, H; Yoshida, T; Sakai, T
      Ultra high vacuum-based in situ characterization of compound semiconductorsurfaces by a contactless capacitance-voltage technique

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    25. Szentpali, B; Van Tuyen, V; Constantinidis, G; Lagadas, M
      GaAs planar doped barrier diodes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    26. Yoneta, M; Uechi, H; Nanami, K; Ohishi, M; Saito, H; Yoshino, K; Ohmori, K
      Growth and characterization of codoping of ZnSe : Cl with Li grown by molecular beam epitaxy on GaAs

      PHYSICA B
    27. Xie, YG; Kasai, S; Takahashi, H; Jiang, C; Hasegawa, H
      Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer

      IEICE TRANSACTIONS ON ELECTRONICS
    28. Heald, S; Stern, E; Brewe, D; Gordon, R; Crozier, D; Jiang, DT; Cross, J
      XAFS at the Pacific Northwest Consortium-Collaborative Access Team undulator beamline

      JOURNAL OF SYNCHROTRON RADIATION
    29. Goldman, AM; Kraus, PI; Nikolaev, K; Vas'ko, V; Bhattacharya, A; Cooley, W
      Spin injection and transport in magnetic-superconducting oxide heterostructures

      JOURNAL OF SUPERCONDUCTIVITY
    30. Waag, A; Gruber, T; Reuscher, G; Fiederling, R; Ossau, W; Schmidt, G; Molenkamp, LW
      Spin manipulation using magnetic II-VI semiconductors

      JOURNAL OF SUPERCONDUCTIVITY
    31. Xie, YG; Kasai, S; Takahashi, H; Jiang, C; Hasegawa, H
      A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance

      IEEE ELECTRON DEVICE LETTERS
    32. Jernigan, GG; Thompson, PE
      Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800 degrees C on Si (100) by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    33. Ng, HM; Chu, SNG; Cho, AY
      In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    34. Lee, JY; Wang, TC; Chen, SF; Juang, JY; Lin, JY; Wu, KH; Uen, TM; Gou, YS
      Growth kinetics of homoepitaxial strontium titanate films by interrupted pulsed laser deposition

      CHINESE JOURNAL OF PHYSICS
    35. Mano, T; Tsukamoto, S; Koguchi, N; Fujioka, H; Oshima, M; Lee, CD; Leem, JY; Lee, HJ; Noh, SK
      Transmission electron microscope study of InGaAs quantum dots fabricated by SPEED method

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    36. Vilela, MF; Anselm, KA; Sooriar, N; Johnson, JL; Lin, CH; Brown, GJ; Mahalingam, K; Saxler, A; Szmulowicz, F
      InAs/InGaSb photodetectors grown on GaAs bonded substrates

      JOURNAL OF ELECTRONIC MATERIALS
    37. Varesi, JB; Bornfreund, RE; Childs, AC; Radford, WA; Maranowski, KD; Peterson, JM; Johnson, SM; Giegerich, LM; de Lyon, TJ; Jensen, JE
      Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4 '' silicon substrates

      JOURNAL OF ELECTRONIC MATERIALS
    38. D'Souza, AI; Dewames, RE; Wijewarnasuriya, PS; Hildebrandt, G; Arias, JM
      Current mechanisms in VLWIR Hg1-xCdxTe photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    39. Tennant, WE; Thomas, M; Kozlowski, LJ; McLevige, WV; Edwall, DD; Zandian, M; Spariosu, K; Hildebrandt, G; Gil, V; Ely, P; Muzilla, M; Stoltz, A; Dinan, JH
      A novel simultaneous unipolar multispectral integrated technology approachfor HgCdTeIR detectors and focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    40. Almeida, LA; Hirsch, L; Martinka, M; Boyd, PR; Dinan, JH
      Improved morphology and crystalline quality of MBE CdZnTe/Si

      JOURNAL OF ELECTRONIC MATERIALS
    41. Maranowski, KD; Peterson, JM; Johnson, SM; Varesi, JB; Childs, AC; Bornfreund, RE; Buell, AA; Radford, WA; de Lyon, TJ; Jensen, JE
      MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    42. Zandian, M; Goo, E
      TEM investigation of defects in arsenic doped layers grown in-situ by MBE

      JOURNAL OF ELECTRONIC MATERIALS
    43. Piquette, EC; Zandian, M; Edwall, DD; Arias, JM
      MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations

      JOURNAL OF ELECTRONIC MATERIALS
    44. Edwall, D; Phillips, J; Lee, D; Arias, J
      Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry

      JOURNAL OF ELECTRONIC MATERIALS
    45. Hong, SK; Chen, Y; Ko, HJ; Wenisch, H; Hanada, T; Yao, T
      ZnO and related materials: Plasma-assisted molecular beam epitaxial growth, characterization, and application

      JOURNAL OF ELECTRONIC MATERIALS
    46. Sou, IK; Wu, MCW; Sun, T; Wong, KS; Wong, GKL
      MBE-grown ZnMgS ultra-violet photodetectors

      JOURNAL OF ELECTRONIC MATERIALS
    47. Peiris, FC; Bindley, U; Furdyna, JK
      Optical properties of molecular beam epitaxy-grown ZnSexTe1-xII-VI semiconductor alloys

      JOURNAL OF ELECTRONIC MATERIALS
    48. Velicu, S; Badano, G; Selamet, Y; Grein, CH; Faurie, JP; Sivananthan, S; Boieriu, P; Rafol, D; Ashokan, R
      HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

      JOURNAL OF ELECTRONIC MATERIALS
    49. Brill, G; Velicu, S; Boieriu, P; Chen, Y; Dhar, NK; Lee, TS; Selamet, Y; Sivananthan, S
      MBE growth and device processing of MWIR HgCdTe on large area Si substrates

      JOURNAL OF ELECTRONIC MATERIALS
    50. Vanmil, BL; Ptak, AJ; Giles, NC; Myers, TH; Treado, PJ; Nelson, MP; Ribar, JM; Smith, RD
      The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    51. Aqariden, F; Shih, HD; Turner, AM; Liao, PK
      Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B

      JOURNAL OF ELECTRONIC MATERIALS
    52. Kang, S; Doolittle, WA; Lee, KK; Dai, ZR; Wang, ZL; Stock, SR; Brown, AS
      Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    53. Kim, H; Falth, FJ; Andersson, TG
      Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    54. Dumesnil, K; Dufour, C; Robert, S; Mangin, P
      Magnetic study of DHCP (0001) samarium epitaxial films

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    55. Beaujour, JML; Bowden, GJ; Gordeev, S; de Groot, PAJ; Rainford, BD; Sawicki, M; Ward, RCC; Wells, MR
      Effect of exchange springs on the coercivity of DyFe2-YFe2 superlattices

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    56. Mizuguchi, M; Akinaga, H; Ono, K; Oshima, M
      Magnetic properties of MnSb granular films

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    57. Beaujour, JML; Bowden, GJ; Gordeev, S; de Groot, PAJ; Rainford, BD; Ward, RCC; Wells, MR
      Exchange springs in YFe2 dominated DyFe2-YFe2 superlattices

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    58. Ahn, JY; Tanaka, M; Imamura, M
      Magneto-optical properties of four-element semimagnetic semiconductor CdMnCoTe films on quartz glass

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    59. Novikov, SV; Winser, AJ; Harrison, I; Davis, CS; Foxon, CT
      A study of the mechanisms responsible for blue emission from arsenic-dopedgallium nitride

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    60. Nemcsics, A; Riesz, F
      Influence of lattice mismatch and growth rate on the decay of RHEED oscillation in the case of InGaAs/GaAs growth

      CRYSTAL RESEARCH AND TECHNOLOGY
    61. Abadias, G; Gilles, B; Marty, A
      A relation between the Au-surfactant effect and the chemical mixing duringthe epitaxial growth of Ni on Au(001)

      APPLIED SURFACE SCIENCE
    62. Sokolov, NS; Suturin, SM
      MBE growth of calcium and cadmium fluoride nanostructures on silicon

      APPLIED SURFACE SCIENCE
    63. Yoneta, M; Ohishi, M; Saito, H
      Thermal stability of Li-related 1D defects in ZnSe : Li/GaAs grown by MBE

      APPLIED SURFACE SCIENCE
    64. Hada, T; Miyamoto, H; Yanagisawa, J; Wakaya, F; Yuba, Y; Gamo, K
      Carrier activation in in situ Si-doped GaAs layers fabricated by a focusedSi ion beam and molecular beam epitaxy combined system

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    65. Rauscher, H
      The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures

      SURFACE SCIENCE REPORTS
    66. Lee, EC; Kim, YS; Jin, YG; Chang, KJ
      Compensation mechanism for N acceptors in ZnO - art. no. 085120

      PHYSICAL REVIEW B
    67. Gillet, F; Csahok, Z; Misbah, C
      Continuum nonlinear surface evolution equation for conserved step-bunchingdynamics - art. no. 241401

      PHYSICAL REVIEW B
    68. Van de Walle, CG; Limpijumnong, S; Neugebauer, J
      First-principles studies of beryllium doping of GaN - art. no. 245205

      PHYSICAL REVIEW B
    69. Seo, JW; Fompeyrine, J; Siegwart, H; Locquet, JP
      Oxidation mechanism of LaTiO3.5 thin films - art. no. 205401

      PHYSICAL REVIEW B
    70. Itoh, M; Ohno, T
      Atomic-scale Monte Carlo study of step-flow growth modes on GaAs(001)-(2X4) - art. no. 125301

      PHYSICAL REVIEW B
    71. Voogt, FC; Smulders, PJM; Wijnja, GH; Niesen, L; Fujii, T; James, MA; Hibma, T
      NO2-assisted molecular-beam epitaxy of wustitelike and magnetitelike Fe oxynitride films on MgO(100) - art. no. 125409

      PHYSICAL REVIEW B
    72. Chern, G; Horng, L; Shieh, WK; Wu, TC
      Antiparallel state, compensation point, and magnetic phase diagram of Fe3O4/Mn3O4 superlattices - art. no. 094421

      PHYSICAL REVIEW B
    73. Strasser, T; Solterbeck, C; Schattke, W; Bartos, I; Cukr, M; Jiricek, P
      Valence-band photoemission from GaAs(100)-c(4x4) - art. no. 085309

      PHYSICAL REVIEW B
    74. Groger, RM; Barczewski, MR
      Ultrathin Al layers on Si(111) and Si(100): structures and phase transitions

      SURFACE AND INTERFACE ANALYSIS
    75. Itoh, M
      Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces

      PROGRESS IN SURFACE SCIENCE
    76. Bugajski, M; Muszalski, J; Mroziewicz, B; Reginski, K; Ochalski, TJ
      Resonant cavity enhanced photonic devices

      OPTICA APPLICATA
    77. Srinivasan, T; Muralidharan, K; Mehta, SK; Jain, BP; Singh, SN; Jain, RK; Kumar, V
      Characterisation of molecular beam epitaxy-grown InGaAs multilayer structures using photoluminescence

      VACUUM
    78. Nakayama, H; Ohta, H; Kulatov, E
      Photo-thermal excitation gas-source MBE growth of super-doped Si : Mn for spin-photonics applications

      THIN SOLID FILMS
    79. Bolkhovityanov, YB; Gutakovskii, AK; Mashanov, VI; Pchelyakov, OP; Revenko, MA; Sokolov, LV
      Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation

      THIN SOLID FILMS
    80. Yuan, K; Radhakrishnan, K; Zheng, HQ; Zhuang, QD; Ing, GI
      Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

      THIN SOLID FILMS
    81. Kuchenbecker, J; Kibbel, H; Muthsam, P; Konig, U
      Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation

      THIN SOLID FILMS
    82. Suzuki, H; Nakahara, H; Miyata, S; Ichimiya, A
      Surface morphology of Ga adsorbed Si(113) surface

      SURFACE SCIENCE
    83. Lee, JY; Juang, JY; Wu, KH; Uen, TM; Gou, YS
      Annealing characteristics of pulsed laser deposited homoepitaxial SrTiO3 thin films

      SURFACE SCIENCE
    84. Kim, JH; Song, JI
      Low-frequency noise characteristics of highly-strained In0.5Ga0.5P/In0.33Ga0.67As pseudomorphic high electron mobility transistor

      SOLID-STATE ELECTRONICS
    85. Johnson, JW; Baca, AG; Briggs, RD; Shul, RJ; Wendt, JR; Monier, C; Ren, F; Pearton, SJ; Dabiran, AM; Wowchack, AM; Polley, CJ; Chow, PP
      Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

      SOLID-STATE ELECTRONICS
    86. Pacheco, M; Barticevic, Z; Tutor, J
      Stark optical transitions in bidimensional arrays of quantum dots

      SOLID STATE COMMUNICATIONS
    87. Christen, HM; Silliman, SD; Harshavardhan, KS
      Continuous compositional-spread technique based on pulsed-laser depositionand applied to the growth of epitaxial films

      REVIEW OF SCIENTIFIC INSTRUMENTS
    88. Shan, CX; Fan, XW; Zhang, JY; Zhang, ZZ; Ma, JG; Lu, YM; Liu, YC; Shen, DZ
      Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    89. Zheng, XH; Qu, B; Wang, YT; Dai, ZZ; Han, JY; Yang, H; Liang, JW
      Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates

      JOURNAL OF CRYSTAL GROWTH
    90. Lee, KK; Doolittle, WA; Kim, TH; Brown, AS; May, GS; Stock, SR; Dai, ZR; Wang, ZL
      A comparative study of surface reconstruction of wurtzite GaN on (0001) sapphire by RF plasma-assisted molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    91. Bai, J; Wang, T; Li, HD; Jiang, N; Sakai, S
      (0001) oriented GaN epilayer grown on (1 1 (2)over-bar 0) sapphire by MOCVD

      JOURNAL OF CRYSTAL GROWTH
    92. Huth, M; Meffert, H; Oster, J; Adrian, H
      Re-entrance phase formation of CeSb thin films

      JOURNAL OF CRYSTAL GROWTH
    93. Lebedev, V; Jinschek, J; Krausslich, J; Kaiser, U; Schroter, B; Richter, W
      Hexagonal AlN films grown on nominal and off-axis Si(001) substrates

      JOURNAL OF CRYSTAL GROWTH
    94. Koshiba, S; Nakamura, Y; Noda, T; Watanabe, S; Akiyama, H; Sakaki, H
      Transformation of GaAs (001)-(111)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates

      JOURNAL OF CRYSTAL GROWTH
    95. Taguchi, A; Shiraishi, K; Ito, T
      First-principles study of Si incorporation processes on a GaAs(111)A surface

      JOURNAL OF CRYSTAL GROWTH
    96. Inushima, T; Mamutin, VV; Vekshin, VA; Ivanov, SV; Sakon, T; Motokawa, M; Ohoya, S
      Physical properties of InN with the band gap energy of 1.1eV

      JOURNAL OF CRYSTAL GROWTH
    97. Nemeth, S; Boeve, H; Liu, ZY; Attenborough, K; Bender, H; Nistor, L; Borghs, G; De Boeck, J
      Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE usingECR microwave plasma nitrogen source

      JOURNAL OF CRYSTAL GROWTH
    98. Chen, F; Lu, HB; Zhao, T; Chen, ZH; Yang, GZ
      Optical in situ monitoring of complex oxide thin film laser molecular beamepitaxy

      JOURNAL OF CRYSTAL GROWTH
    99. Lee, YK; Han, SW; Lee, SS; Kim, CG; Kim, Y
      The growth of beta-LiGaO2 films using novel single precursors

      JOURNAL OF CRYSTAL GROWTH
    100. Choi, JH; Tabata, H; Kawai, T
      Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition

      JOURNAL OF CRYSTAL GROWTH


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/02/20 alle ore 05:47:14