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La ricerca find articoli where soggetti phrase all words 'LOW-TEMPERATURE GROWTH' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 172 riferimenti
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    1. Kim, DY; Ahn, BJ; Moon, SI; Won, CY; Yi, J
      Low temperature mu c-Si film growth using a CaF2 seed layer

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Tazima, M; Yamamoto, K; Okazawa, D; Nagashima, A; Yoshino, J
      Effect of Mn on the low temperature growth of GaAs and GaMnAs

      PHYSICA E
    3. Ob''edkov, AM; Domrachev, GA; Korovina, EY; Razov, EN
      Emission properties of the plasma in mixtures of helium with diethylzinc and hydrogen selenide vapors

      RUSSIAN JOURNAL OF GENERAL CHEMISTRY
    4. He, DY
      Control of the surface reactions during the low-temperature growth of polycrystalline silicon films

      ACTA PHYSICA SINICA
    5. Ramesh, R; Aggarwal, S; Auciello, O
      Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    6. Bolshakov, AP; Konov, VI; Prokhorov, AM; Uglov, SA; Dausinger, F
      Laser plasma CVD diamond reactor

      DIAMOND AND RELATED MATERIALS
    7. Gomi, M
      Pulsed laser deposition of magnetic oxide thin films for magnetic tunneling devices

      JOURNAL OF ALLOYS AND COMPOUNDS
    8. Sanchez-Almazan, F; Gendry, M; Regreny, P; Bergignat, E; Grenet, G; Hollinger, G; Olivares, J; Bremond, G; Marty, O; Pitaval, M
      Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy

      OPTICAL MATERIALS
    9. Kim, KC; Park, CI; Roh, JI; Nahm, KS; Seo, YH
      Formation mechanism of interfacial voids in the growth of Sic films on Si substrates

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    10. Boo, JH; Lee, SB; Lee, KW; Yu, KS; Kim, Y; Yeon, SH; Jung, IN
      Epitaxial growth of cubic SiC thin films on silicon using single molecularprecursors by metalorganic chemical vapor deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    11. Takahashi, R
      Low-temperature-grown surface-reflection all-optical switch (LOTOS)

      OPTICAL AND QUANTUM ELECTRONICS
    12. Okimura, K
      Low temperature growth of rutile TiO2 films in modified rf magnetron sputtering

      SURFACE & COATINGS TECHNOLOGY
    13. Nishio, M; Hayashida, K; Harada, H; Mitsuishi, Y; Guo, QX; Ogawa, H
      Photo luminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    14. Rauscher, H
      The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures

      SURFACE SCIENCE REPORTS
    15. Lefevre, A; Lewis, LJ; Martinu, L; Wertheimer, MR
      Structural properties of silicon dioxide thin films densified by medium-energy particles - art. no. 115429

      PHYSICAL REVIEW B
    16. Sasaki, K
      Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy

      THIN SOLID FILMS
    17. Bolkhovityanov, YB; Gutakovskii, AK; Mashanov, VI; Pchelyakov, OP; Revenko, MA; Sokolov, LV
      Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation

      THIN SOLID FILMS
    18. Lu, HF; Sun, YC
      Calculation of hydrogen abstraction reaction on hydrogen-covered H/C(111) diamond surface abstracted by non-hydrocarbon species

      SURFACE SCIENCE
    19. Foord, JS; Singh, NK; Jackman, RB; Gutierrez-Sosa, A; Proffitt, S; Holt, KB
      Reactions of xenon difluoride and atomic hydrogen at chemical vapour deposited diamond surfaces

      SURFACE SCIENCE
    20. Summers, S; Reehal, HS; Shirkoohi, GH
      The effects of varying plasma parameters on silicon thin film growth by ECR plasma CVD

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    21. Wang, L; Reehal, HS
      Thin base-layer single crystal silicon solar cells with ECR plasma CVD grown emitters

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    22. Re, M; Scalese, S; Mirabella, S; Terrasi, A; Priolo, F; Rimini, E; Berti, M; Coati, A; Drigo, A; Carnera, A; De Salvador, D; Spinella, C; La Mantia, A
      Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    23. Li, JM; Sun, GS; Zhu, SR; Wang, L; Luo, MC; Zhang, FF; Lin, LY
      Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

      JOURNAL OF CRYSTAL GROWTH
    24. Oyama, Y; Suzuki, T; Suto, K; Nishizawa, JI
      Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP

      JOURNAL OF CRYSTAL GROWTH
    25. Nahm, KS; Kim, KC; Park, CI; Lim, KY; Yang, YS; Seo, YH
      Growth chemistry and interface characterization of single crystal SiC on modified Si surface

      JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
    26. Kim, KC; Park, CI; Roh, JI; Nahm, KS; Hahn, YB; Lee, YS; Lim, KY
      Mechanistic study and characterization of 3C-SiC(100) grown on Si(100)

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    27. Fujisawa, H; Kita, K; Shimizu, M; Niu, H
      Low-temperature fabrication of Ir/Pb(ZrTi)O-3/Ir capacitors solely by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    28. Kiyomura, T; Gomi, M
      Structural and magnetic properties of spinel ferrite epitaxial films pulsed-laser-deposited at low temperature

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    29. Saito, Y; Teraguchi, N; Suzuki, A; Araki, T; Nanishi, Y
      Growth of high-electron-mobility InN by RF molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    30. Wong, TC; Wu, JJ
      Low temperature growth of polycrystalline silicon films by hot-wire chemical vapor deposition using SiCl4/H-2 gases

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    31. Takada, T; Sasaki, K
      Selective epitaxial growth of Si thin films by ECR plasma CVD

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    32. Babcock, JR; Benson, DD; Wang, AC; Edleman, NL; Belot, JA; Metz, MV; Marks, TJ
      Polydentate amines as CVD precursor ancillary ligands. Epitaxial MgO thin-film growth using a highly volatile, thermally and air-stable magnesium precursor

      CHEMICAL VAPOR DEPOSITION
    33. Proffitt, S; Thompson, CHB; Gutierrez-Sosa, A; Paris, N; Singh, NK; Jackman, RB; Foord, JS
      Understanding the chemistry of low temperature diamond growth: an investigation into the interaction of chlorine and atomic hydrogen at CVD diamond surfaces

      DIAMOND AND RELATED MATERIALS
    34. Zhang, ZY; Zhao, W; Wang, XW; Lei, TM; Chen, ZM; Zhou, SX
      Epitaxial monocrystalline SiC films grown on Si by HFCVD at 780 degrees C

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    35. Endo, T; Itoh, K; Horie, M; Itoh, K; Hirate, N; Yamada, S; Tada, M; Sano, S
      Low-temperature process and growth enhancement of a-oriented YBa2Cu3Ox thin films by oxygen plasma

      PHYSICA C
    36. Tsubouchi, N; Chayahara, A; Kinomura, A; Heck, C; Horino, Y
      Silicon carbide film growth using dual isotopical Si-28(-) and C-12(+) ionspecies

      MATERIALS TRANSACTIONS JIM
    37. Kim, KC; Nahm, KS; Hahn, YB; Lee, YS; Byun, HS
      Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in lowpressure radio frequency-induction heated chemical vapor deposition reactor

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    38. Mayusumi, M; Imai, M; Nakahara, S; Inoue, K
      Silicon surfaces cleaning and epitaxial growth through protective oxidation and hydrogen termination

      KAGAKU KOGAKU RONBUNSHU
    39. Dimitrova, V; Manova, D; Djulgerova, R
      Element composition and electrochemical behaviour of polycrystalline AlN thin films

      SURFACE & COATINGS TECHNOLOGY
    40. Wang, HH
      Properties and preparation of AlN thin films by reactive laser ablation with nitrogen discharge

      MODERN PHYSICS LETTERS B
    41. Hiraki, A
      Low-temperature (200 degrees C) growth of diamond on nano-seeded substrates

      APPLIED SURFACE SCIENCE
    42. Pfennigstorf, O; Lang, K; Gunter, HL; Henzler, M
      Electronic transport in ultrathin epitaxial Pb films on Si(111) surfaces

      APPLIED SURFACE SCIENCE
    43. Goldys, EM; Godlewski, M; Langer, R; Barski, A
      Surface morphology of cubic and wurtzite GaN films

      APPLIED SURFACE SCIENCE
    44. Kandel, D; Kaxiras, E
      The surfactant effect in semiconductor thin-film growth

      SOLID STATE PHYSICS: ADVANCES IN RESEARCH AND APPLICATIONS, VOL. 54
    45. Martev, IN
      Oxygen-ion-assisted deposition of TiO films

      VACUUM
    46. Bauer, M; Lyutovich, K; Oehme, M; Kasper, E; Herzog, HJ; Ernst, F
      Relaxed SiGe buffers with thicknesses below 0.1 mu m

      THIN SOLID FILMS
    47. Kingston-Smith, AH; Foyer, CH
      Bundle sheath proteins are more sensitive to oxidative damage than those of the mesophyll in maize leaves exposed to paraquat or low temperatures

      JOURNAL OF EXPERIMENTAL BOTANY
    48. Oe, K
      Low-temperature metalorganic vapor-phase epitaxial growth of InGaAs layerson InP substrates

      JOURNAL OF CRYSTAL GROWTH
    49. Noda, D; Aoki, T; Nakanishi, Y; Hatanaka, Y
      Growth of CdZnTe and CdSeTe crystals for p-i-n radiation detectors

      JOURNAL OF CRYSTAL GROWTH
    50. Fissel, A
      Thermodynamic considerations of the epitaxial growth of SiC polytypes

      JOURNAL OF CRYSTAL GROWTH
    51. Egerton, JJG; Banks, JCG; Gibson, A; Cunningham, RB; Ball, MC
      Facilitation of seedling establishment: Reduction in irradiance enhances winter growth of Eucalyptus pauciflora

      ECOLOGY
    52. Nakahata, K; Ro, K; Suemasu, A; Kamiya, T; Fortmann, CM; Shimizu, I
      Fabrication of polycrystalline silicon films from SiF4/H-2/SiH4 gas mixture using very high frequency plasma enhanced chemical vapor deposition with in situ plasma diagnostics and their structural properties

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    53. Kim, MH; Lee, SN; Park, NM; Park, SJ
      Metalorganic molecular beam epitaxy of GaN thin films on a sapphire substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. Guo, QX; Okada, A; Kidera, H; Nishio, M; Ogawa, H
      Growth of AlInN on (111)GaAs substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    55. Schmidt, I; Benndorf, C
      Using fluorine and chlorine in the diamond CVD process

      DIAMOND AND RELATED MATERIALS
    56. Stiegler, J; Michler, J; Blank, E
      An investigation of structural defects in diamond films grown at low substrate temperatures

      DIAMOND AND RELATED MATERIALS
    57. Asmann, M; Heberlein, J; Pfender, E
      A review of diamond CVD utilizing halogenated precursors

      DIAMOND AND RELATED MATERIALS
    58. Meng, WJ; Curtis, TJ; Rehn, LE; Baldo, PM
      Temperature dependence of inductively coupled plasma assisted growth of TiN thin films

      SURFACE & COATINGS TECHNOLOGY
    59. Mishra, M; Goel, R
      Development of a cold resistant mutant of plant growth promoting Pseudomonas fluorescens and its functional characterization

      JOURNAL OF BIOTECHNOLOGY
    60. Leipner, J; Fracheboud, Y; Stamp, P
      Effect of growing season on the photosynthetic apparatus and leaf antioxidative defenses in two maize genotypes of different chilling tolerance

      ENVIRONMENTAL AND EXPERIMENTAL BOTANY
    61. Stiegler, J; Bergmaier, A; Michler, J; Laufer, S; Dollinger, G; Blank, E
      The effect of nitrogen on low temperature growth of diamond films

      THIN SOLID FILMS
    62. Nishio, M; Enoki, T; Mitsuishi, Y; Guo, QX; Ogawa, H
      Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources

      THIN SOLID FILMS
    63. Kim, HS; Park, YJ; Choi, IH; Baik, YJ
      beta-SiC thin film growth using microwave plasma activated CH4-SiH4 sources

      THIN SOLID FILMS
    64. Edwards, KA; Howes, PB; Macdonald, JE; Hibma, T; Bootsma, T; James, MA
      Observation of a structural transition during the low-temperature growth of the Si(111)7x7-Pb interface

      SURFACE SCIENCE
    65. Deming, M; Varhue, W; Adams, E; Lavoie, M
      Substrate heater for the growth of epitaxial silicon films

      REVIEW OF SCIENTIFIC INSTRUMENTS
    66. Fracheboud, Y; Haldimann, P; Leipner, J; Stamp, P
      Chlorophyll fluorescence as a selection tool for cold tolerance of photosynthesis in maize (Zea mays L.)

      JOURNAL OF EXPERIMENTAL BOTANY
    67. Shen, A; Matsukura, F; Guo, SP; Sugawara, Y; Ohno, H; Tani, M; Abe, H; Liu, HC
      Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

      JOURNAL OF CRYSTAL GROWTH
    68. Chao, TS; Kuo, CP; Chen, TP; Lei, TF
      A novel Si-B diffusion source for p(+)-poly-Si gate

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    69. Nakanishi, K; Suzuki, H; Katoh, T; Imai, S; Nakayama, Y; Miki, H
      Deposition of polyethylene thin films using synchrotron radiation ablation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    70. Chen, JF; Wang, PY; Wang, JS; Wong, HZ
      Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    71. Guo, QX; Nishio, M; Ogawa, H; Yoshida, A
      Low-temperature growth of InN films on (111)GaAs substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    72. Pohl, UW; Knorr, K; Moller, C; Gernert, U; Richter, W; Blasing, J; Christen, J; Gottfriedsen, J; Schumann, H
      Low-temperature metalorganic vapor phase epitaxy (MOVPE) of GaN using tertiarybutylhydrazine

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    73. Otsuka, N; Nishizawa, J; Kikuchi, H; Oyama, Y
      Self-limiting growth of specular InP layer by alternate injection of triethylindium and tertiarybutylphosphine in ultrahigh vacuum

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    74. CHEN J; STECKL AJ; LOBODA MJ
      MOLECULAR-BEAM EPITAXY GROWTH OF SIC ON SI(111) FROM SILACYCLOBUTANE

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    75. HIRATANI M; TARUTANI Y; TAKAGI K
      LATTICE BENDING APPEARING IN TRANSMISSION ELECTRON-MICROSCOPE VIEW - THE STRAIN RELEASE IN THE HETEROEPITAXIAL STRUCTURE OF THE HOBA2CU3OY PRBA2CU3OY/SRTIO3(110) SUBSTRATE/

      Physica. C, Superconductivity
    76. CHENG CC; CHEN YC; HORNG RC; WANG HJ; CHEN WR; LAI EK
      GROWTH OF C-AXIS ORIENTED ALUMINUM NITRIDE FILMS ON GAAS SUBSTRATES BY REACTIVE RF MAGNETRON SPUTTERING

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    77. EKWEOZOR CC; NWOGUH CE; BARER MR
      TRANSIENT INCREASES IN COLONY COUNTS OBSERVED IN DECLINING POPULATIONS OF CAMPYLOBACTER-JEJUNI HELD AT LOW-TEMPERATURE

      FEMS microbiology letters
    78. DOCTER DP; IBBETSON JP; GAO Y; MISHRA UK; LIU T; GRIDER DE
      ANALYSIS OF V III INCORPORATION IN NONSTOICHIOMETRIC GAAS AND INP FILMS USING SIMS/

      Journal of electronic materials
    79. MOMIJI H; AKAGI K; ADACHI K; FUTAMOTO M
      EFFECTS OF AR PRESSURE DURING COCRPT SPUTTER-DEPOSITION ON READ WRITEAND RELATED PROPERTIES OF COCRPT/CR MAGNETIC RECORDING MEDIA FORMED AT LOW-TEMPERATURES/

      Journal of magnetism and magnetic materials
    80. OKUMURA H; ISHIKAWA T; AKANE T; SANO M; MATSUMOTO S
      LOW-TEMPERATURE GROWTH OF SI ON SI(111) BY GAS-SOURCE MBE WITH RAPID THERMAL ANNEALING - AFM STUDY ON SURFACE-MORPHOLOGY

      Applied surface science
    81. Dmitriev, VA; Spencer, MG
      SiC fabrication technology: Growth and doping

      SIC MATERIALS AND DEVICES
    82. BOO JH; USTIN SA; HO W
      SUPERSONIC JET EPITAXY OF SINGLE-CRYSTALLINE CUBIC SIC THIN-FILMS ON SI SUBSTRATES FROM T-BUTYLDIMETHYLSILANE

      Thin solid films
    83. Ishikawa, T; Okumura, H; Akane, T; Sano, M; Giraud, S; Nakabayashi, Y; Matsumoto, S
      Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing

      THIN SOLID FILMS
    84. Kasper, E; Lyutovich, K; Bauer, M; Oehme, M
      New virtual substrate concept for vertical MOS transistors

      THIN SOLID FILMS
    85. WARREN CR; HOVENDEN MJ; DAVIDSON NJ; BEADLE CL
      COLD HARDENING REDUCES PHOTOINHIBITION OF EUCALYPTS NITENS AND E-PAUCIFLORA AT FROST TEMPERATURES

      Oecologia
    86. FAN YC; FITZGERALD AG; XU HC
      SPM STUDY OF YBCO FILMS PREPARED BY PLASMA-ASSISTED LASER-ABLATION

      Mikrochimica acta (1966)
    87. CHEN Y; GUO LP; JOHNSON DJ; PRINCE RH
      PLASMA-INDUCED LOW-TEMPERATURE GROWTH OF GRAPHITIC NANOFIBERS ON NICKEL SUBSTRATES

      Journal of crystal growth
    88. BOO JH; USTIN SA; HO W
      GROWTH OF HEXAGONAL GAN THIN-FILMS ON SI(111) WITH CUBIC SIC BUFFER LAYERS

      Journal of crystal growth
    89. KERN RS; TANAKA S; ROWLAND LB; DAVIS RF
      REACTION-KINETICS OF SILICON-CARBIDE DEPOSITION BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

      Journal of crystal growth
    90. SEO YH; KIM KC; SHIM HW; NAHM KS; SUH EK; LEE HJ; KIM DK; LEE BT
      EFFECTS OF EXPERIMENTAL PARAMETERS ON VOID FORMATION IN THE GROWTH OF3C-SIC THIN-FILM ON SI SUBSTRATE

      Journal of the Electrochemical Society
    91. YOKOZEKI M; YONEZU H; TSUJI T; AIZAWA K; OHSHIMA N
      REDUCTION OF POINT-DEFECTS AND FORMATION OF ABRUPT HETEROINTERFACES IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GAAS AND GAP UNDER ATOMIC-HYDROGEN IRRADIATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. SUZUKI D; YAMAGUCHI H; HORIKOSHI Y
      SCANNING-TUNNELING-MICROSCOPY STUDY OF GAAS(001) SURFACES GROWN BY MIGRATION-ENHANCED EPITAXY AT LOW-TEMPERATURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    93. Lee, CD; Park, C; Lee, HJ; Lee, KS; Park, SJ; Park, CG; Noh, SK; Koguchi, N
      Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. RINALDI C; LUCON E; CASAROLI F
      CREEP CRACK-GROWTH MICROMECHANISMS AT 405-DEGREES-C IN COLD BENT TUBES OF A C-MN-MO STEEL

      Fatigue & fracture of engineering materials & structures
    95. YASUTAKE K; TAKEUCHI A; KAKIUCHI H; OKUYAMA Y; YOSHII K; KAWABE H
      LOW-TEMPERATURE GROWTH OF INGAAS GAAS STRAINED-LAYER SINGLE QUANTUM-WELLS/

      International journal of the Japan Society for Precision Engineering
    96. SEO YH; NAHM KS; SUH EK; LEE HJ; HWANG YG
      GROWTH-MECHANISM OF 3C-SIC(111) FILMS ON SI USING TETRAMETHYLSILANE BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    97. BECHSTEDT F; KACKELL P; ZYWIETZ A; KARCH K; ADOLPH B; TENELSEN K; FURTHMULLER J
      POLYTYPISM AND PROPERTIES OF SILICON-CARBIDE

      Physica status solidi. b, Basic research
    98. NAGASAWA H; YAGI K
      3C-SIC SINGLE-CRYSTAL FILMS GROWN ON 6-INCH SI SUBSTRATES

      Physica status solidi. b, Basic research
    99. FUYUKI T; HATAYAMA T; MATSUNAMI H
      HETEROINTERFACE CONTROL AND EPITAXIAL-GROWTH OF 3C-SIC ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

      Physica status solidi. b, Basic research
    100. KERN RS; JARRENDAHL K; TANAKA S; DAVIS RF
      HOMOEPITAXIAL SIC GROWTH BY MOLECULAR-BEAM EPITAXY

      Physica status solidi. b, Basic research


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Documento generato il 28/05/20 alle ore 09:47:51