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La ricerca find articoli where soggetti phrase all words 'LIQUID-PHASE EPITAXY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 425 riferimenti
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    1. Chaussende, D; Ferro, G; Monteil, Y
      Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

      JOURNAL OF CRYSTAL GROWTH
    2. Kita, K; Wen, CJ; Otomo, J; Yamada, K; Komiyama, H; Takahashi, H
      Study on the lateral growth of silicon films from metal solutions with temperature gradient

      JOURNAL OF CRYSTAL GROWTH
    3. Krier, A
      Physics and technology of mid-infrared light emitting diodes

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    4. Gumenjuk-Sichevskaja, JV; Sizov, FF; Ovsyuk, VN; Vasil'ev, VV; Esaev, DG
      Charge transport in HgCdTe-based n(+)-p photodiodes

      SEMICONDUCTORS
    5. Stuckings, MF; Fischer, B; Giroult, G; Cuevas, A; Stocks, MJ; Blakers, AW
      Gallium contacts on p-type silicon substrates

      PROGRESS IN PHOTOVOLTAICS
    6. Qi, X; Perkins, GK; Caplin, AD; MacManus-Driscoll, JL
      Solubility and LPE growth of mixed REBa2CU3O7-delta

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    7. Izumi, T; Hobara, N; Kakimoto, K; Izumi, T; Hasegawa, K; Kai, M; Honjo, T; Yao, X; Fuji, H; Nakamura, Y; Shiohara, Y
      Coated conductor of RE-Ba-Cu-O thick film on metal tape fabricated by liquid phase epitaxy process

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    8. Maeda, T; Kim, SB; Suga, T; Kurosaki, H; Yuasa, T; Yamada, Y; Yamada, Y; Yoshino, H; Yamazaki, M; Thanh, TD; Watanabe, T; Matsumoto, K; Hirabayashi, I
      TYTBa2CU3O7-delta thick films grown on textured metal substrates by liquid-phase epitaxy process

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    9. Izumi, T; Yao, X; Hobara, N; Kakimoto, K; Haegawa, K; Nakamura, Y; Izumi, T; Shiohara, Y
      LPE growth of RE123 crystals from NiO saturated solution

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    10. Burkhalter, R; Dohnke, I; Hulliger, J
      Growing of bulk crystals and structuring waveguides of fluoride materials for laser applications

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    11. McCann, MJ; Catchpole, KR; Weber, KJ; Blakers, AW
      A review of thin-film crystalline silicon for solar cell applications. Part 1: Native substrates

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    12. Kita, K; Yamatsugu, H; Wen, CJ; Komiyama, H; Yamada, K
      Zone-defined growth of multicrystalline silicon film from metal-silicon solution

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    13. Nishida, S; Nakagawa, K; Iwane, M; Iwasaki, Y; Ukiyo, N; Mizutani, M; Shoji, T
      Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    14. Dubs, C; Ruske, JP; Werner, E; Tunnermann, A; Schmidt, C; Bruchlos, G
      Epitaxial grown K1-xRbxTiOPO4 films with extremely flat surfaces for waveguiding

      OPTICAL MATERIALS
    15. Prochazkova, O; Zavadil, J; Zdansky, K
      LPE InP layers grown in the presence of rare-earth elements

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    16. Rakovics, V; Balazs, J; Puspoki, S; Frigeri, C
      Influence of LPE growth conditions on the electroluminescence properties of InP/InGaAs(P) infrared emitting diodes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    17. Kuznetsov, N; Tsagaraki, K; Bauman, D; Morozov, A; Nikitina, I; Ivantsov, V; Zekentes, K
      Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    18. Tanaka, I; Ashizawa, K; Tanabe, H; Watauchi, S; Yamanaka, J
      Preparation of La2-xSrxCuO4 single-crystalline films by infrared-heated liquid phase epitaxial technique

      PHYSICA C
    19. Kurosaki, H; Yuasa, T; Maeda, T; Yamada, Y; Kim, SB; Watanabe, T; Wada, K; Hirabayashi, I
      Fabrication of buffer layers and seed layers on biaxially textured Ni tapes for YBCO superconducting wire

      PHYSICA C
    20. Kim, S; Maeda, T; Yamada, Y; Suga, T; Yamada, Y; Watanabe, T; Matsumoto, K; Hirabayashi, I
      Fabrication of seed/buffer layers on metallic substrates for YBCO coated conductors

      PHYSICA C
    21. Miura, T; Yamada, Y; Suga, T; Huang, DX; Kim, S; Maeda, T; Hirabayashi, I; Ikuta, H; Mizutani, U
      Non-cuprate thin films as candidates of seed layer for liquid phase epitaxy process

      PHYSICA C
    22. Izumi, T; Hobara, N; Kakimoto, K; Izumi, T; Hasegawa, K; Kai, M; Honjo, T; Yao, X; Fuji, H; Nakamura, Y; Shiohara, Y
      Liquid phase epitaxy processed coated conductors on metal tapes

      PHYSICA C
    23. Hobara, N; Asada, S; Izumi, T; Yao, X; Hasegawa, K; Kai, M; Kuzunetsov, MS; Fuji, H; Honjo, T; Krauns, C; Nakamura, Y; Izumi, T; Shiohara, Y
      Fabrication of YBa2Cu3Oy layer on metal substrate using liquid phase epitaxy method

      PHYSICA C
    24. Maeda, T; Kim, S; Suga, T; Kurosaki, H; Yuasa, T; Yamada, Y; Watanabe, T; Matsumoto, K; Hirabayashi, I
      Characterization of YBa2Cu3O7-delta films grown on NiO buffer layer by liquid-phase epitaxy process

      PHYSICA C
    25. Kai, M; Hobara, N; Hasegawa, K; Izumi, T; Fuji, H; Honjo, T; Nakamura, Y; Izumi, T; Shiohara, Y
      Optimization of seed film for fabrication of Y123 LPE film on metal substrate with MgO buffer layer

      PHYSICA C
    26. Krauns, C; Koyama, S; Izumi, T; Izumi, T; Nakamura, Y; Shiohara, Y
      Initial stage in the liquid phase epitaxy of Nd123 of films: dependence ofgrowth rate on process parameter

      PHYSICA C
    27. Yao, X; Nomura, K; Yoshizumi, M; Kuznetsov, M; Nakamura, Y; Izumi, T; Shiohara, Y
      Superconducting transition temperature of NdBCO liquid phase epitaxy film on MgO substrate and effect of Mg diffusion

      PHYSICA C
    28. Yao, X; Izumi, T; Hobara, N; Nakamura, Y; Izumi, T; Shiohara, Y
      REBCO superconductor on Ni-NdBCO buffered MgO substrate by liquid phase epitaxy process (RE = Nd, Sm, Y)

      PHYSICA C
    29. Nomura, K; Hoshi, S; Yao, X; Nakamura, Y; Izumi, T; Shiohara, Y
      Growth mechanism of RE-Ba-Cu-O film on MgO substrate by liquid phase epitaxy

      PHYSICA C
    30. Yasuda, T; Uchiyama, T; Tonouchi, M; Takano, S
      Growth of Bi2Sr2CaCu2O8+x single-crystalline films by liquid phase epitaxy

      PHYSICA C
    31. Eltsev, Y; Nakao, K; Yamada, Y; Hirabayashi, I; Ishimaru, Y; Tanabe, K; Enomoto, Y; Wen, JG; Koshizuka, N
      Charge transport across 45 degrees asymmetrical grain boundary fabricated in YBa2Cu3O7-x films grown by the liquid phase epitaxy

      PHYSICA C
    32. Hasegawa, K; Hobara, N; Nakamura, Y; Izumi, T; Shiohara, Y
      Preparation of MgO films on metal substrate as a buffer layer for liquid phase epitaxy processed RE123 coated conductor

      PHYSICA C
    33. Ono, S; Hirano, S
      Processing of highly oriented lithium niobate films through chemical solution deposition

      JOURNAL OF MATERIALS RESEARCH
    34. Zirpoli, A; Varela, JA; Gonzalez, AHM; Gimenez, R; Cavalheiro, AA; Cilense, M; Zaghete, MA; Stojanovic, B
      Influence of thermal treatment on the crystallization and roughness of LinbO(3) thin films deposited by a spin coating method

      BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO
    35. Bostrup, G; Hess, KL; Ellsworth, J; Cooper, D; Haines, R
      LPE HgCdTe on sapphire status and advancements

      JOURNAL OF ELECTRONIC MATERIALS
    36. Weiss, E; Klin, O; Benory, E; Kedar, E; Juravel, Y
      Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers

      JOURNAL OF ELECTRONIC MATERIALS
    37. Saidov, AS; Razzakov, AS; Risaeva, VA; Koschanov, EA
      Liquid-phase epitaxy of solid solutions (Ge-2)(1-x)(ZnSe)(x)

      MATERIALS CHEMISTRY AND PHYSICS
    38. Keszei, B; Vertesy, Z; Vertesy, G
      Growth of Bi and Ga substituted YIG and LuIG layers by LPE method

      CRYSTAL RESEARCH AND TECHNOLOGY
    39. Prochazkova, O; Zavadil, J; Zdansky, K
      Role of f-elements in the growth of InP layers for radiation detectors

      CRYSTAL RESEARCH AND TECHNOLOGY
    40. Sydorchuk, P; Khlyap, G; Andrukhiv, A
      Growth and some properties of heterostructures based on new narrow-gap semiconductor ZnCdHgTe

      CRYSTAL RESEARCH AND TECHNOLOGY
    41. Gleichmann, H; Richert, H; Hergt, R; Barz, RU; Grassl, M; Gornert, P
      Hydrothermal liquid phase epitaxy of gallium orthophosphate on quartz crystal substrates

      CRYSTAL RESEARCH AND TECHNOLOGY
    42. Shim, JB; Yoshimoto, N; Yoshizawa, M; Yoon, DH
      Structural characteristics of Er doped LiNbO3 thin films grown by the liquid phase epitaxy method

      CRYSTAL RESEARCH AND TECHNOLOGY
    43. Sundman, B; Ansara, I; Hillert, M; Inden, G; Lukas, HL; Kumar, KCH
      Contributions to the thermodynamic modelling of solutions

      ZEITSCHRIFT FUR METALLKUNDE
    44. Bahng, JH; Ha, MH; Lee, M; Kim, KJ; Park, HL
      Ellipsometric study of Te and Ge co-doped In0.5Ga0.5P alloys

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    45. Yoon, IT; Han, SY; Park, HL; Kim, TW
      Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    46. Kawamura, F; Yasui, I; Sunagawa, I
      Investigations on the growth and morphology of TiO2 in the TiO2-Na2B4O7 system with and without impurities using a new LPE method

      JOURNAL OF CRYSTAL GROWTH
    47. Tanaka, A; Sukegawa, T
      ZnSe growth from zinc chloride solvent by successive liquid phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    48. Hayakawa, Y; Balakrishnan, K; Iida, S; Shibata, Y; Koyama, T; Kumagawa, M
      Optimization of circular trench geometry of GaAs(111)B substrates for growth of high quality InxGa1-xAs bridge layers

      JOURNAL OF CRYSTAL GROWTH
    49. Dhanasekaran, R; Fareed, RSQ; Ramasamy, P
      Simulation studies on the liquid phase electroepitaxial growth of III-V compound semiconductors

      JOURNAL OF CRYSTAL GROWTH
    50. Izumi, T; Hobara, N; Kakimoto, K; Izumi, T; Hasegawa, K; Kai, M; Honjo, T; Yao, X; Fuji, H; Nakamura, Y; Shiohara, Y
      Growth of RE-Ba-Cu-O thick film on metal substrate by liquid phase epitaxyprocess

      JOURNAL OF CRYSTAL GROWTH
    51. Yamada, Y; Hirabayashi, I
      Liquid phase epitaxy of YBa2Cu3O7-x film: exploration of new seed layer materials and additives in the solvent

      JOURNAL OF CRYSTAL GROWTH
    52. Yao, X; Izumi, T; Hobara, N; Nakamura, Y; Izumi, T; Shiohara, Y
      Crystal growth of NdBa2(Cu1-xNix)(3)O7-delta solid solutions by top-seededsolution growth for HTS device and tape applications

      JOURNAL OF CRYSTAL GROWTH
    53. Nomura, K; Hoshi, S; Yao, X; Kakimoto, K; Izumi, T; Nakamura, Y; Shiohara, Y
      Preferential growth of RE-Ba-Cu-O crystal by liquid phase epitaxy process

      JOURNAL OF CRYSTAL GROWTH
    54. Isoda, S; Nemoto, T; Fujiwara, E; Adachi, Y; Kobayashi, T
      Orientation fluctuation of organic monomolecular layers at liquid/solid interfaces

      JOURNAL OF CRYSTAL GROWTH
    55. Callejo, D; Manotas, S; Serrano, MD; Bermudez, V; Agullo-Rueda, F; Dieguez, E
      Compositional study of LiNbO3 thin films grown by liquid phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    56. Mauk, MG; Tata, AN; Cox, JA
      Solution growth of thick III-V antimonide alloy epilayers (InAsSb, InGaSb,InGaAsSb, AlGaAsSb, and InAsSbP) for "virtual substrates"

      JOURNAL OF CRYSTAL GROWTH
    57. Lu, CW; Chen, JC
      Numerical computation of sapphire crystal growth using heat exchanger method

      JOURNAL OF CRYSTAL GROWTH
    58. Mauk, MG; Curran, JP
      Electro-epitaxial lateral overgrowth of silicon from liquid-metal solutions

      JOURNAL OF CRYSTAL GROWTH
    59. Mauk, MG; Tata, AN; Feyock, BW
      Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic-photoelectrolysis cells

      JOURNAL OF CRYSTAL GROWTH
    60. Epelbaum, BM; Hofmann, D
      On the mechanisms of micropipe and macrodefect transformation in SiC during liquid phase treatment

      JOURNAL OF CRYSTAL GROWTH
    61. Naritsuka, S; Nishinaga, T
      Interface-supersaturation estimated from the shape of steps on the surfaceof InP MCE by LPE

      JOURNAL OF CRYSTAL GROWTH
    62. Oyama, Y; Suzuki, T; Suto, K; Nishizawa, JI
      Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP

      JOURNAL OF CRYSTAL GROWTH
    63. Moiseev, KD; Mikhailova, MP; Yakovlev, YP; Simecek, T; Hulicius, E; Oswald, J
      Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs

      JOURNAL OF APPLIED PHYSICS
    64. Hobara, N; Asada, S; Kuznetsov, M; Izumi, T; Yao, X; Kai, M; Krauns, C; Hasegawa, K; Nakamura, Y; Izumi, T; Shiohara, Y
      Development of double layered LPE processing for high-T-c RE123 coated conductors using MgO saturated system

      JOURNAL OF THE JAPAN INSTITUTE OF METALS
    65. Nomura, K; Hoshi, S; Nakamura, Y; Izumi, T; Shiohara, Y
      Initial growth mechanism of YBa2Cu3Oy/MgO film by liquid phase epitaxy

      JOURNAL OF THE JAPAN INSTITUTE OF METALS
    66. Huang, WD; Nishinaga, T; Naritsuka, S
      Microchannel epitaxy of GaAs from parallel and nonparallel seeds

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. Ishikawa, F; Hirama, A; Hasegawa, H
      Bulk and interface deep levels in InGaP/GaAs heterostructures grown by tertiarybutylphosphine-based gas source molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    68. Yao, X; Izumi, T; Hobara, N; Nakamura, Y; Izumi, T; Shiohara, Y
      YBa2Cu3O7-delta/NdBa2(CU1-xNix)(3)O7-delta double layers by liquid-phase epitaxial growth

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    69. Rogalski, A
      Heterostructure infrared photovoltaic detectors

      INFRARED PHYSICS & TECHNOLOGY
    70. Krier, A; Gao, HH; Sherstnev, VV
      Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs

      IEE PROCEEDINGS-OPTOELECTRONICS
    71. Jablonski, R; Sarnecki, J; Mazur, K; Sass, J; Skwarcz, J
      ESR and X-ray diffraction measurements of Nd substituted yttrium aluminum garnet films

      JOURNAL OF ALLOYS AND COMPOUNDS
    72. Koshizuka, N; Takagi, T; Wen, JG; Nakao, K; Usagawa, T; Eltsev, Y; Machi, T
      Critical currents and microstructures of LPE grown YBCO bicrystal films with large single facet grain boundaries

      PHYSICA C
    73. Izumi, T; Yao, X; Nomura, K; Kakimoto, K; Egami, M; Hayashi, A; Shiohara, Y
      Single crystal growth and LPE thin film process for RE-123 superconductingmaterials

      PHYSICA C
    74. Dornheim, M; Teichler, H
      Atomistic modeling of misfit dislocation network variants for Ge/Si(111) interfaces

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    75. Rhiger, DR; Sen, S; Gordon, EE
      Strain relief in epitaxial HgCdTe by growth on a reticulated substrate

      JOURNAL OF ELECTRONIC MATERIALS
    76. Tobin, SP; Hutchins, MA; Norton, PW
      Composition and thickness control of thin LPE HgCdTe layers using X-ray diffraction

      JOURNAL OF ELECTRONIC MATERIALS
    77. Sembian, AM; Banhart, F; Konuma, M; Weber, J; Babu, SM; Ramasamy, P
      Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates

      THIN SOLID FILMS
    78. Sargent, EH
      Semiconductor lasers for planar integrated optoelectronics

      SOLID-STATE ELECTRONICS
    79. Kim, TW; Han, SY; Park, HL
      Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100)substrates

      SOLID STATE COMMUNICATIONS
    80. Khan, MN; Nishizawa, S; Bahng, W; Arai, K
      Liquid-phase epitaxy on 6H-SiC Acheson seed crystals in closed vessel

      JOURNAL OF CRYSTAL GROWTH
    81. Izumi, T; Kakimoto, K; Nomura, K; Shiohara, Y
      Preferential growth mechanism of YBCO film on MgO substrate in initial stage of LPE growth

      JOURNAL OF CRYSTAL GROWTH
    82. Nugraha; Tamura, W; Itoh, O; Suto, K; Nishizawa, J
      Growth of Pb1-xSnxTe (x approximate to 0.12) epitaxial layers by temperature difference under controlled vapor pressure liquid-phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    83. Kursumovic, A; Cheng, YS; Glowacki, BA; Madsen, J; Evetts, JE
      Study of the rate-limiting processes in liquid-phase epitaxy of thick YBaCuO films

      JOURNAL OF CRYSTAL GROWTH
    84. Sorokin, VS; Sorokin, SV; Semenov, AN; Meltser, BY; Ivanov, SV
      Novel approach to the calculation of instability regions in GaInAsSb alloys

      JOURNAL OF CRYSTAL GROWTH
    85. Qi, X; MacManus-Driscoll, JL
      Liquid-phase epitaxial growth of REBa2Cu3O7-delta (RE = Y, Yb, Er) thick films at reduced temperatures

      JOURNAL OF CRYSTAL GROWTH
    86. Iida, S; Hayakawa, Y; Minami, S; Koyama, T; Kumagawa, M
      Role of lateral growth fronts in the formation of InxGa1-xAs bridge layer on trench substrates

      JOURNAL OF CRYSTAL GROWTH
    87. Iida, S; Balakrishnan, K; Koyama, T; Hayakawa, Y; Kumagawa, M
      Growth of InxGa1-xAs layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    88. Yan, Z; Hamaoka, Y; Naritsuka, S; Nishinaga, T
      Coalescence in microchannel epitaxy of InP

      JOURNAL OF CRYSTAL GROWTH
    89. Klemenz, C; Scheel, HJ
      Crystal growth and liquid-phase epitaxy of gallium nitride

      JOURNAL OF CRYSTAL GROWTH
    90. Naritsuka, S; Nishinaga, T; Tachikawa, M; Mori, H
      Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source

      JOURNAL OF CRYSTAL GROWTH
    91. Iida, S; Hayakawa, Y; Koyama, T; Kumagawa, M
      Formation mechanism of InxGa1-xAs bridge layers on patterned GaAs substrates

      JOURNAL OF CRYSTAL GROWTH
    92. Saito, T; Oyama, Y; Suto, K; Nishizawa, J; Kimura, T
      Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface

      JOURNAL OF CRYSTAL GROWTH
    93. Yan, Z; Naritsuka, S; Nishinaga, T
      Two-dimensional numerical calculation of solute diffusion in microchannel epitaxy of InP

      JOURNAL OF CRYSTAL GROWTH
    94. Olvera-Hernandez, J; de Anda, F; Navarro-Contreras, H; Mishurnyi, VA
      High purity GaSb grown by LPE in a sapphire boat

      JOURNAL OF CRYSTAL GROWTH
    95. Tanaka, A; Izumi, N; Kimura, M; Sukegawa, T
      Direct observation of LPE heterogrowth of GaAs on a GaP substrate

      JOURNAL OF CRYSTAL GROWTH
    96. Kopecek, R; Peter, K; Hotzel, J; Bucher, E
      Structural and electrical properties of silicon epitaxial layers grown by LPE on highly resistive monocrystalline substrates

      JOURNAL OF CRYSTAL GROWTH
    97. Li, CP; McCann, PJ; Fang, XM
      Strain relaxation in PbSnSe and PbSe/PbSnSe layers grown by liquid-phase epitaxy on (100)-oriented silicon

      JOURNAL OF CRYSTAL GROWTH
    98. Damayanthi, P; Joshi, RP; McAdoo, JA
      Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs

      JOURNAL OF APPLIED PHYSICS
    99. Sotoodeh, M; Khalid, AH; Rezazadeh, AA
      Empirical low-field mobility model for III-V compounds applicable in device simulation codes

      JOURNAL OF APPLIED PHYSICS
    100. Izumi, T; Yao, X; Hobara, N; Kakimoto, K; Hasegawa, K; Yuichi; Nakamura; Izumi, T; Shiohara, Y
      Growth of RE123 crystal from the NiO saturated solution by LPE method

      JOURNAL OF THE JAPAN INSTITUTE OF METALS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/10/20 alle ore 11:18:04