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La ricerca find articoli where soggetti phrase all words 'LEAKAGE CURRENT' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 574 riferimenti
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    1. Ohshika, K; Kuroda, J; Yanazawa, H
      The effect of surface oxidation status on 0.35-mu m HIGFET characteristics

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    2. Park, J; Harlow, DG; Nied, HF
      Growth kinetics of interfacial damage: Epoxy coating on a generic dual inline package

      IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES
    3. Okuyama, M; Sugiyama, H; Nakaiso, T; Noda, M
      Retention analysis of the memorized states of the MFIS structure for ferroelectric-gate FET memory by considering leakage current through ferroelectric and insulator layers

      INTEGRATED FERROELECTRICS
    4. Yoon, SG; Kingon, AI; Kim, SH
      Electrical properties of Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films with various iridium-based top electrodes

      INTEGRATED FERROELECTRICS
    5. Bachhofer, H; Reisinger, H; Schroeder, H; Haneder, T; Dehm, C; Von Philipsborn, H; Waser, R
      Relaxation effects and steady-state conduction in non-stoichiometric SBT films

      INTEGRATED FERROELECTRICS
    6. Kil, DS; Park, JB; Lee, JS; Yoon, JW; Yu, YS; Roh, JS; Kim, CT; Hwang, JM
      Electrical properties of MOCVD BST thin films annealed by rapid thermal annealing process

      INTEGRATED FERROELECTRICS
    7. Jaing, CC; Lai, CH; Kao, HL; Chen, JS
      Deposition of high dielectric (Ba,Sr)TiO3 thin films by RF magnetron co-sputtering

      INTEGRATED FERROELECTRICS
    8. Yan, F; Bao, P; Chen, XB; Zhu, JS; Wang, YN
      The resistance degradation of (Ba0.5Sr0.5)TiO3 thin films

      INTEGRATED FERROELECTRICS
    9. Hashimoto, T
      Detection of crustal inhomogeneity in the Nojima Fault zone using earth current noise

      ISLAND ARC
    10. Zhao, M; Zhang, RJ; Gu, HS; Chen, MN
      Preparation of (Ba0.5Sr0.5)TiO3 thin film by sol-gel technique and its characteristics

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    11. Liu, HX; Hao, Y
      Study on stress indeuced leakage current transient characteristics in thingate oxide

      ACTA PHYSICA SINICA
    12. Nahm, CW
      The electrical properties and d.c. degradation characteristics of DY2O3 doped Pr6O11-based ZnO varistors

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    13. Ferre, A; Figueras, J
      LEAP: An accurate defect-free I-DDQ estimator

      JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS
    14. Kuroda, T
      Low power CMOS design challenges

      IEICE TRANSACTIONS ON ELECTRONICS
    15. Saito, M; Okuwada, K; Nadahara, S
      Nanoscale investigation of piezo and leakage defects in SBT film by SPM

      IEICE TRANSACTIONS ON ELECTRONICS
    16. Rux, L; McDermid, W
      Assessing the condition of hydrogenerator stator winding insulation using the ramped high direct-voltage test method

      IEEE ELECTRICAL INSULATION MAGAZINE
    17. Odanaka, S; Hiroki, A; Yamashita, K; Nakanishi, K; Noda, T
      Double pocket architecture using indium and boron for sub-100 nm MOSFETs

      IEEE ELECTRON DEVICE LETTERS
    18. Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
      A novel thin-film transistor with self-aligned field induced drain

      IEEE ELECTRON DEVICE LETTERS
    19. Nam, SW; Yoo, JH; Kim, HY; Kang, SK; Ko, DH; Yang, CW; Lee, HJ; Cho, MH; Ku, JH
      Study of ZrO2 thin films for gate oxide applications

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    20. Okonogi, K; Miyoshi, K; Toda, A
      Defect control of STI process technology

      NEC RESEARCH & DEVELOPMENT
    21. Jonsson, P; Forsberg, U; Niklasson, J; Stegmayr, BG
      Electrical current leakage during hemodialysis may increase blood-membraneinteraction

      INTERNATIONAL JOURNAL OF ARTIFICIAL ORGANS
    22. Kizil, H; Kim, G; Steinbruchel, C; Zhao, B
      TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology

      JOURNAL OF ELECTRONIC MATERIALS
    23. Houssa, M; Stesmans, A; Heyns, MM
      Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2gate dielectric stacks

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    24. Ishikawa, M; Mifune, T; Tong, JZ
      Two dimensional analyses of coal fired magnetohydrodynamic Faraday generator at IEE, China

      ENERGY CONVERSION AND MANAGEMENT
    25. Yang, JK; Kim, WS; Park, HR
      Effect of grain size of Pb(Zr0.3Ti0.6)O-3 sol-gel derived thin films on the ferroelectric properties

      APPLIED SURFACE SCIENCE
    26. Takagi, S; Takayanagi, M
      Carrier transport properties of thin gate oxides after soft and hard breakdown

      MICROELECTRONIC ENGINEERING
    27. Komiya, K; Omura, Y
      Spectroscopic analysis of stress-induced defects in thin silicon oxide films

      MICROELECTRONIC ENGINEERING
    28. Ghetti, A
      Characterization and modeling of the tunneling current in Si-SiO2-Si structures with ultra-thin oxide layer

      MICROELECTRONIC ENGINEERING
    29. Scarpa, A; Tao, G; Dijkstra, J; Kuper, FG
      Tail bit implications in advanced 2 transistors-flash memory device reliability

      MICROELECTRONIC ENGINEERING
    30. Ielmini, D; Spinelli, AS; Lacaita, AL; Modelli, A
      A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories

      MICROELECTRONIC ENGINEERING
    31. Houssa, A; Afanas'ev, VV; Stesmans, A; Heyns, MM
      Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacksand the dispersive transport model

      MICROELECTRONIC ENGINEERING
    32. Riedel, S; Schulz, SE; Baumann, J; Rennau, M; Gessner, T
      Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion

      MICROELECTRONIC ENGINEERING
    33. Zhang, HR; von Jouanne, A; Dai, S
      A reduced-switch dual-bridge inverter topology for the mitigation of bearing currents, EMI, and dc-link voltage variations

      IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
    34. Uchiyama, Y; Masuda, A; Matsumura, H
      A Cat-CVD Si3N4 film study and its application to the ULSI process

      THIN SOLID FILMS
    35. Chung, HJ; Choi, JH; Lee, JY; Woo, SI
      Preparation and electrical properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition

      THIN SOLID FILMS
    36. Dimitrova, T; Arshak, K; Atanassova, E
      Crystallization effects in oxygen annealed Ta2O5 thin films on Si

      THIN SOLID FILMS
    37. Meinertzhagen, A; Zander, D; Petit, C; Jourdain, M; Gogenheim, D
      Low voltage and temperature effects on SILC in stressed ultrathin oxide films

      SOLID-STATE ELECTRONICS
    38. Boyd, IW; Zhang, JY
      Photo-induced growth of dielectrics with excimer lamps

      SOLID-STATE ELECTRONICS
    39. Bellodi, M; Martino, JA
      Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures

      SOLID-STATE ELECTRONICS
    40. Dimitriadis, CA; Kamarinos, G; Brini, J
      Leakage current of offset gate p- and n-channel excimer laser annealed polycrystalline silicon thin-film transistors

      SOLID-STATE ELECTRONICS
    41. Wu, JY; Sze, PW; Wang, YH; Houng, MP
      Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET

      SOLID-STATE ELECTRONICS
    42. Jeong, S; Oshiyama, A
      Atomic and electronic structures of N-incorporated Si oxides

      PHYSICAL REVIEW LETTERS
    43. Ghetti, A; Alam, M; Bude, J
      Anode hole generation mechanisms

      MICROELECTRONICS RELIABILITY
    44. Zander, D; Petit, C; Saigne, F; Meinertzhagen, A
      High field stress at and above room temperature in 2.3 nm thick oxides

      MICROELECTRONICS RELIABILITY
    45. Rosenbaum, E; Wu, J
      Trap generation and breakdown processes in very thin gate oxides

      MICROELECTRONICS RELIABILITY
    46. Yang, CY; Wang, Z; Tan, CH; Xu, MZ
      The degradation of p-MOSFETs under off-state stress

      MICROELECTRONICS JOURNAL
    47. Zander, D; Saigne, F; Petit, C; Meinertzhagen, A
      Electrical stress effects on ultrathin (2.3 nm) oxides

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    48. Plossu, C; Croci, S; Monti, N; Bouchakour, R; Laffont, R; Boivin, P; Mirabel, JM
      Conduction properties of electrically erasable read only memory tunnel oxides under dynamic stress

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    49. Candelori, A; Paccagnella, A; Raggi, G; Wyss, J; Bisello, D; Ghidini, G
      High energy Si ion irradiation effects on 10 nm thick oxide MOS capacitors

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    50. Croci, S; Plossu, C; Balland, B; Raynaud, C; Boivin, P
      Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    51. Wuu, DS; Horng, RH; Liao, FC; Lin, CC
      Nitridation of (Ba,Sr)TiO3 films in an inductively coupled plasma

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    52. Jimenez-Molinos, F; Palma, A; Gamiz, F; Banqueri, J; Lopez-Villanueva, JA
      Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

      JOURNAL OF APPLIED PHYSICS
    53. Green, ML; Gusev, EP; Degraeve, R; Garfunkel, EL
      Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

      JOURNAL OF APPLIED PHYSICS
    54. Mikhelashvili, V; Eisenstein, G
      Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation

      JOURNAL OF APPLIED PHYSICS
    55. Huang, CH; Hwu, JG
      Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (similar to 2 nm) after high-field stress

      JOURNAL OF APPLIED PHYSICS
    56. Stadele, M; Tuttle, BR; Hess, K
      Tunneling through ultrathin SiO2 gate oxides from microscopic models

      JOURNAL OF APPLIED PHYSICS
    57. Candelori, A; Ceschia, M; Paccagnella, A; Wyss, J; Bisello, D; Ghidini, G
      Thin oxide degradation after high-energy ion irradiation

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    58. Bourdelle, KK; Chen, YN; Ashton, RA; Rubin, LM; Agarwal, A; Morris, WH
      Evaluation of high dose, high energy boron implantation into Cz substratesfor epi-replacement in CMOS technology

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    59. Adan, AO; Higashi, K
      OFF-state leakage current mechanisms in BulkSi and SOI MOSFETs and their impact on CMOS ULSIs standby current

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    60. Ielmini, D; Spinelli, AS; Lacaita, AL; DiMaria, DJ; Ghidini, G
      A detailed investigation of the quantum yield experiment

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    61. Dalla Serra, A; Abramo, A; Palestri, P; Selmi, L; Widdershoven, F
      Closed- and open-boundary models for gate-current calculation in n-MOSFETs

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    62. Bansropun, S; Woods, RC; Roberts, JS
      Evidence of optical gain improvement in AlGaAs/GaAs heterojunction phototransistors using an emitter shoulder structure

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    63. Chen, JH; Wong, SC; Wang, YH
      An analytic three-terminal band-to-band tunneling model on GIDL in MOSFET

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    64. Momose, HS; Ohguro, T; Morifuji, E; Sugaya, H; Nakamura, S; Iwai, H
      Ultrathin gate oxide CMOS with nondoped selective epitaxial Si channel layer

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    65. Teramoto, A; Kobayashi, K; Ohno, Y; Shigetomi, A
      Excess currents induced by hot hole injection and FN electron injection inthin SiO2 films

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    66. Ma, SG; Zhang, YH; Li, MF; Li, WD; Xie, J; Sheng, GTT; Yen, AC; Wang, JLF
      Gate-induced drain leakage current enhanced by plasma charging damage

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    67. Larcher, L; Paccagnella, A; Ghidini, G
      A model of the stress induced leakage current in gate oxides

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    68. Yih, CM; Ho, ZH; Liang, MS; Chung, SS
      Characterization of hot-hole injection induced SILC and related disturbs in flash memories

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    69. Kang, TK; Chen, MJ; Liu, CH; Chang, YJ; Fan, SK
      Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILCmechanism

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    70. Poyai, A; Simoen, E; Claeys, C
      Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n(+)-p-well diodes

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    71. Park, SS; Yoon, SG
      Structure and electrical properties of sputter deposited (Ba1-x,Sr-x) (Ti1-y,Zr-y)O-3 thin films

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    72. Huang, JH; Lai, YS; Chen, JS
      Comparison of dielectric characteristics of Ta2O5 thin films on RuO2 and Ru bottom electrodes

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    73. Lee, JW; Han, CH; Park, JS; Park, JW
      Electrical characteristics and thermal stability of W, WNx, and TiN barriers in metal/Ta2O5/Si gate devices

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    74. Cester, A; Paccagnella, A; Sune, J; Miranda, E
      Post-radiation-induced soft breakdown conduction properties as a function of temperature

      APPLIED PHYSICS LETTERS
    75. Hong, CC; Hwu, JG
      Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress

      APPLIED PHYSICS LETTERS
    76. Irrera, F
      Degradation kinetics of thermal oxides

      APPLIED PHYSICS LETTERS
    77. Yi, WC; Kalkur, TS; Philofsky, E; Kammerdiner, L; Rywak, AA
      Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films fabricated by metalorganic decomposition method

      APPLIED PHYSICS LETTERS
    78. Morito, K; Suzuki, T; Fujimoto, M
      Effects of Mn dopant on the leakage current properties in SrTiO3 thin films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    79. Yoon, KH; Lee, JC; Park, J; Kang, DH; Song, CM; Seo, YG
      Electrical properties of Mg doped (Ba0.5Sr0.5)TiO3 thin films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    80. Kweon, SY; Choi, SK; Yang, WS; Yeom, SJ; Roh, JS
      Thermal stability and electrical properties of SrBi2Ta2-xNbxO9/IrOx capacitors with Pt top electrode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    81. Chen, SY; Wang, HW; Huang, LC
      Electrical properties of Mg/La, Mg/Nb co-doped (Ba0.7Sr0.3)TiO3 thin filmsprepared by metallo-organic deposition method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    82. Houng, MP; Wang, YH; Horng, JH; Huang, RC
      Effects of annealing on tantalum pentoxide films in N-2 and N2O gas environments

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    83. Lai, YS; Chen, JS
      Characterization of tantalum pentoxide dielectric films grown by low-pressure and plasma-enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    84. Aratani, M; Nagashima, K; Funakubo, H
      Preparation of Pb(Zr-x,Ti1-x)O-3 thin films by source gas pulse-introducedmetalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    85. De Vleeschouwer, H; Verschueren, A; Bougrioua, F; van Asselt, R; Alexander, E; Vermael, S; Neyts, K; Pauwels, H
      Long-term ion transport in nematic liquid crystal displays

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. Takeda, K; Hinode, K; Noguchi, J; Yamaguchi, H
      Light emission analysis of dielectric breakdown in stressed Damascene copper interconnection

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    87. Kanemoto, K; Aharoni, H; Ohmi, T
      Ultrashallow and low-leakage p(+)n junction formation by plasma immersion ion implantation (PIII) and low-temperature post-implantation annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    88. Houssa, M; Naili, M; Heyns, M; Stesmans, A
      Charge trapping in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    89. Lee, JW; Han, CH; Park, JS; Park, JW
      Degradation of TA(2)O(5) gate dielectric by TiCl4-based chemically vapor deposited TiN film in W/TiN/Ta2O5/Si system

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    90. Cho, BJ; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS
      Reliability of thin gate oxides irradiated under X-ray lithography conditions

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    91. Miura, Y; Fujieda, S
      Spin-dependent trap-assisted tunneling current in ultra-thin gate dielectrics

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. Yanagi, S; Nakakubo, A; Omura, Y
      A partial-ground-plane (PGP) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) for deep sub-0.1-mu m channel regime

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    93. Takahashi, M; Sugiyama, H; Nakaiso, T; Kodama, K; Noda, M; Okuyama, M
      Analysis and improvement of retention time of memorized state of metal-ferroelectric-insulator-semiconductor structure for ferroelectric gate FET memory

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. Imanaga, S; Nakamura, F; Kawai, H
      Current-voltage characteristics of AlN/GaN heterostructure metal insulatorsemiconductor diode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    95. Lee, HC; Lee, WJ
      Preparation and characterization of Pb(Zr,Ti)O-3 films deposited on Pt/RuO2 hybrid electrode for ferroelectric random access memory devices

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    96. Yu, KH; Lin, KW; Cheng, CC; Chang, WL; Tsai, JH; Cheng, SY; Liu, WC
      Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    97. Chen, CM; Chang, SJ; Chou, JW; Lin, T; Yeh, WK; Chang, CY; Luo, WZ; Lee, YJ; Chao, TS; Huang, TY
      The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    98. Bae, G; Lee, H; Jung, DG; Kang, HS; Roh, Y; Yang, CW
      Properties of HfO2/Hf-silicate/Si structures with Hf-silicate formed by Hfmetal deposition and subsequent reaction

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    99. Manabe, K; Kobayashi, K; Fujieda, S; Tatsumi, T
      Mechanism of leakage current reduction by adding WO3 to crystallized TA(2)O(5)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    100. Won, DJ; Wang, CH; Choi, DJ
      Characteristics of metal/ferroelectric/insulator/semiconductor using La2O3thin film as an insulator

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


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Documento generato il 06/06/20 alle ore 00:23:46