Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'LASER-DIODES' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 996 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Griese, E
      A high-performance hybrid electrical-optical interconnection technology for high-speed electronic systems

      IEEE TRANSACTIONS ON ADVANCED PACKAGING
    2. Landgraf, S
      Application of semiconductor light sources for investigations of photochemical reactions

      SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
    3. Yakovlev, YP; Danilova, AP; Imenkov, AN; Kolchanova, NM; Sherstnev, VV
      Tunable 3.3 mu m InAsSb/InAsSbP diode lasers: a new concept of fast lasingdue to nonlinear optical effects

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    4. Wakaumi, H; Nagasawa, C
      Development of a two-dimensional bar-code detection system using multi laser diodes with time-sharing light emission operation

      OPTICAL REVIEW
    5. Peterson, P; Gavrielides, A; Sharma, MP
      Extraction characteristics of a one dimensional Talbot cavity with stochastic propagation phase

      OPTICS EXPRESS
    6. Davis, RF; Gehrke, T; Linthicum, KJ; Rajagopal, P; Roskowski, AM; Zheleva, T; Preble, EA; Zorman, CA; Mehregany, M; Schwarz, U; Schuck, J; Grober, R
      Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    7. Eliseev, PG; Li, H; Liu, GT; Stintz, A; Newell, TC; Lester, LF; Malloy, KJ
      Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    8. Erbert, G; Beister, G; Hulsewede, R; Knauer, A; Pittroff, W; Sebastian, J; Wenzel, H; Weyers, M; Trankle, G
      High-power highly reliable Al-free 940-nm diode lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    9. Fischer, MO; Reinhardt, M; Forchel, A
      Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-mu m range

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    10. Jiang, LA; Grein, ME; Haus, HA; Ippen, EP
      Noise of mode-locked semiconductor lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    11. Kawazu, Z; Tashiro, Y; Shima, A; Suzuki, D; Nishiguchi, H; Yagi, T; Omura, E
      Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    12. Lee, SL
      Analytical formula of wavelength-dependent transparent current and its implications for designing wavelength sensors and WDM lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    13. Sebastian, J; Beister, G; Bugge, F; Buhrandt, F; Erbert, G; Hansel, HG; Hulsewede, R; Knauer, A; Pittroff, W; Staske, R; Schroder, M; Wenzel, H; Weyers, M; Trankle, G
      High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    14. Strassburg, M; Schulz, O; Pohl, UW; Bimberg, D; Itoh, S; Nakano, K; Ishibashi, A; Klude, M; Hommel, D
      A novel approach for improved green-emitting II-VI lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    15. Haberer, ED; Chen, CH; Hansen, M; Keller, S; DenBaars, SP; Mishra, UK; Hu, EL
      Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    16. Legge, M; Bacher, G; Bader, S; Kummell, T; Forchel, A; Nurnberger, J; Schumacher, C; Faschinger, W; Landwehr, G
      Selective ultrahigh vacuum dry etching process far ZnSe-based II-VI semiconductors

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    17. Wang, JS; Lin, HH; Song, LW; Chen, GR
      Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    18. Georgobiani, AN; Gruzintsev, AN; Vorob'ev, MO; Kaiser, U; Richter, W; Khodos, II
      Fine structure of the edge ultraviolet luminescence of GaN : Mg films activated in a nitrogen plasma and the electroluminescence of a ZnO-GaN : Mg heterostructure based on these films

      SEMICONDUCTORS
    19. Georgobiani, AN; Gruzintsev, AN; Aminov, UA; Vorob'ev, MO; Khodos, II
      The edge ultraviolet luminescence of GaN : Zn films activated in a nitrogen plasma

      SEMICONDUCTORS
    20. Gordeev, NY; Ivanov, SV; Kopchatov, VI; Novikov, II; Shubina, TV; Il'inskaya, ND; Kop'ev, PS; Reuscher, G; Waag, A; Landwehr, G
      Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers

      SEMICONDUCTORS
    21. Li, GX; Li, FL; Zhu, SY
      Quantum interference between decay channels of a three-level atom in a multilayer dielectric medium - art. no. 013819

      PHYSICAL REVIEW A
    22. Huang, YD; Okuda, T; Sato, K; Muroya, Y; Sasaki, T; Kobayashi, K
      Isolator-free 2.5-Gb/s 80-km transmission by directly modulated lambda/8 phase-shifted DFB-LDs under negative feedback effect of mirror loss

      IEEE PHOTONICS TECHNOLOGY LETTERS
    23. Xue, QZ; Xue, QK; Kuwano, S; Nakayama, K; Sakurai, T
      Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)

      CHINESE PHYSICS
    24. Zhang, XY; Li, ZR; Yan, WS; Wang, XG; Wei, SQ; Lu, KQ
      XAFS studies on local structures of nanocrystalline and crystalline GaN

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    25. Kawakami, Y; Omae, K; Kaneta, A; Okamoto, K; Narukawa, Y; Mukai, T; Fujita, S
      In inhomogeneity and emission characteristics of InGaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    26. Tjong, SC; Ho, HP; Lee, ST
      Development of single- and multi-layered metallic films on diamond by ion beam-assisted deposition

      DIAMOND AND RELATED MATERIALS
    27. Aperathitis, E; Cengher, D; Kayambaki, M; Androulidaki, M; Deligeorgis, G; Tsagaraki, K; Hatzopoulous, Z; Georgakilas, A
      Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    28. Venger, YF; Semenova, GN; Korsunskaya, NE; Semtsiv, MP; Borkovskaya, LV; Sharibaev, M; Braylovsky, YY; Sadofyev, YG
      Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    29. Cremades, A; Piqueras, J; Albrecht, M; Stutzmann, M; Strunk, HP
      Study of structural defects limiting the luminescence of InGaN single quantum wells

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    30. Neu, G; Teisseire, M; Lemasson, P; Lahreche, H; Grandjean, N; Semond, F; Beaumont, B; Grzegory, I; Porowski, S; Triboulet, R
      Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

      PHYSICA B
    31. Piwonski, T; Sajewicz, P; Kubica, JM; Zbroszczyk, M; Reginski, K; Mroziewicz, B; Bugajski, M
      Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    32. Chang, PC; Li, NY; Baca, AG; Hou, HQ; Monier, C; Laroche, JR; Ren, F; Pearton, SJ
      Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

      IEEE ELECTRON DEVICE LETTERS
    33. Lee, SL; Pien, CT; Hsu, YY
      Operation principles of wavelength sensing using transparent properties ofsemiconductor optical diodes

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    34. Dougherty, DJ; Muller, RE; Maker, PD; Forouhar, S
      Stitching-error reduction in gratings by shot-shifted electron-beam lithography

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    35. Stchur, P; Yang, KX; Hou, XD; Sun, T; Michel, RG
      Laser excited atomic fluorescence spectrometry - a review

      SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
    36. Li, WS; Shen, ZX; Li, HY; Shen, DZ; Fan, XW
      Pressure dependence of photoluminescence of ZnTe/Zn1-xCdxTe strained-layersuperlattice

      JOURNAL OF RAMAN SPECTROSCOPY
    37. Choi, SC; Song, YH; Jeon, SL; Jang, HJ; Yang, GM; Cho, HK; Lee, JY
      Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structuresduring metalorganic chemical vapor deposition

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    38. Neugebauer, J
      Ab initio analysis of surface structure and adatom kinetics of group-III nitrides

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    39. Kim, JK; Kim, KJ; Kim, B; Kim, JN; Kwak, JS; Park, YJ; Lee, JL
      Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN

      JOURNAL OF ELECTRONIC MATERIALS
    40. Kim, JK; Kim, CC; Cho, TS; Je, JH; Kwak, JS; Park, YJ; Lee, JL
      Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN

      JOURNAL OF ELECTRONIC MATERIALS
    41. Knauer, A; Wenzel, H; Erbert, G; Sumpf, B; Weyers, M
      Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties

      JOURNAL OF ELECTRONIC MATERIALS
    42. Fornari, R; Bosi, M; Bersani, D; Attolini, G; Lottici, PP; Pelosi, C
      Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    43. Shimaoka, G; Aoki, T; Nakanishi, Y; Hatanaka, Y; Udagawa, T
      Structure and optical properties of (001)GaAs surfaces nitrided in plasma-assisted NH3 gas

      APPLIED SURFACE SCIENCE
    44. Ho, HP; Lo, KC; Chu, PK; Chan, KS; Li, J; Kwok, DTK; Pun, EYB; Marsh, JH
      Controlled intermixing in InGaAsP multiquantum wells by plasma immersion ion implantation of argon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    45. Kim, HM; Kang, TW
      Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD

      MATERIALS LETTERS
    46. Kim, HM; Oh, JE; Kang, TW
      Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method

      MATERIALS LETTERS
    47. Li, W; Pessa, M; Toivonen, J; Lipsanen, H
      Doping and carrier transport in Ga1-3xIn3xNxAs1-x alloys - art. no. 113308

      PHYSICAL REVIEW B
    48. Wu, J; Shan, W; Walukiewicz, W; Yu, KM; Ager, JW; Haller, EE; Xin, HP; Tu, CW
      Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells - art. no. 085320

      PHYSICAL REVIEW B
    49. Wang, LW
      Calculations of carrier localization in InxGa1-xN - art. no. 245107

      PHYSICAL REVIEW B
    50. Sun, CK; Chu, SW; Tai, SP; Keller, S; Abare, A; Mishra, UK; DenBaars, SP
      Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy

      SCANNING
    51. Lin, CF; Wu, BR; Laih, LW; Shih, TT
      Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers-superluminescent diodes

      OPTICS LETTERS
    52. Sidorin, Y; Shack, RV
      Measurement of laser diode astigmatism using the beam-line method

      OPTICAL ENGINEERING
    53. Giuliani, G; Donati, S; Passerini, M; Bosch, T
      Angle measurement by injection detection in a laser diode

      OPTICAL ENGINEERING
    54. McNally, PJ; Tuomi, T; Lowney, D; Jacobs, K; Danilewsky, AN; Rantamaki, R; O'Hare, M; Considine, L
      Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    55. Wu, J; Iordache, G; Summers, HD; Roberts, JS
      Optical characteristics of VCSEL pumped microchip lasers

      OPTICS COMMUNICATIONS
    56. Juang, C; Huang, CC; Hwang, TM; Juang, J; Lin, WW
      Optoelectronic delayed-feedback and chaos in quantum-well laser diodes

      OPTICS COMMUNICATIONS
    57. Feng, PX; Riley, JD; Leckey, RCG; Ley, L
      MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    58. Yoon, IT; Han, SY; Park, HL; Kim, TW
      Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    59. Cho, HK; Lee, JY; Jeon, SR; Yang, GM
      Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    60. Fewster, PF; Andrew, NL; Foxon, CT
      Microstructure and composition analysis of group III nitrides by X-ray scattering

      JOURNAL OF CRYSTAL GROWTH
    61. Xia, R; Xu, H; Harrison, I; Beaument, B; Andrianov, A; Dods, SRA; Morgan, JM; Larkins, EC
      Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs

      JOURNAL OF CRYSTAL GROWTH
    62. Traetta, G; Di Carlo, A; Reale, A; Lugli, P; Lomascolo, M; Passaseo, A; Cingolani, R; Bonfiglio, A; Berti, M; Napolitani, E; Natali, M; Sinha, SK; Drigo, AV
      Charge storage and screening of the internal field in GaN/AlGaN quantum wells

      JOURNAL OF CRYSTAL GROWTH
    63. Schwegler, V; Schad, SS; Scherer, M; Kamp, M; Ulu, G; Emsley, M; Unlu, MS; Lell, A; Bader, S; Hahne, B; Lugauer, HJ; Kuhn, F; Weimar, A; Harle, V
      GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics

      JOURNAL OF CRYSTAL GROWTH
    64. Summers, HD; Smowton, PM; Blood, P; Dineen, M; Perks, RM; Bour, DP; Kneissel, M
      Spatially and spectrally resolved measurement of optical loss in InGaN laser structures

      JOURNAL OF CRYSTAL GROWTH
    65. Hangleiter, A; Heppel, S; Off, J; Kuhn, B; Scholz, F; Bader, S; Hahn, B; Harle, V
      Analysis of the threshold current in nitride-based lasers

      JOURNAL OF CRYSTAL GROWTH
    66. Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M
      Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers

      JOURNAL OF CRYSTAL GROWTH
    67. Scherer, M; Schwegler, V; Seyboth, M; Eberhard, F; Kirchner, C; Kamp, M; Ulu, G; Unlu, MS; Gruhler, R; Hollricher, O
      Characterization of etched facets for GaN-based lasers

      JOURNAL OF CRYSTAL GROWTH
    68. Dumont, J; Monroy, E; Munoz, E; Caudano, R; Sporken, R
      Investigation of metal-GaN and metal-AlGaN contacts by XPS depth profiles and by electrical measurements

      JOURNAL OF CRYSTAL GROWTH
    69. Namikawa, Y; Fujiwara, S; Kotani, T
      Al diffused conductive ZnSe substrates grown by physical vapor transport method

      JOURNAL OF CRYSTAL GROWTH
    70. Song, JS; Chang, JH; Cho, MW; Hanada, T; Yao, T
      Growth and characterization of ZnSe/BeTe superlattices

      JOURNAL OF CRYSTAL GROWTH
    71. Cho, AY; Sivco, DL; Ng, HM; Gmachl, C; Tredicucci, A; Hutchinson, AL; Chu, SNG; Capasso, F
      Quantum devices, MBE technology for the 21st century

      JOURNAL OF CRYSTAL GROWTH
    72. Bhattacharya, P; Krishna, S; Phillips, J; McCann, PJ; Namjou, K
      Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors

      JOURNAL OF CRYSTAL GROWTH
    73. Miao, ZL; Lu, W; Chen, PP; Li, ZF; Cai, WY; Yuan, XZ; Liu, P; Shi, GL; Xu, WL; Shen, XC; Chen, CM; Zhu, DZ; Hu, J; Li, MQ
      Modification of GaAs/AlGaAs asymmetrically coupled double quantum well characteristics by proton implantation induced intermixing

      JOURNAL OF CRYSTAL GROWTH
    74. Hatzopoulos, Z; Cengher, D; Deligeorgis, G; Androulidaki, M; Aperathitis, E; Halkias, G; Georgakilas, A
      Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding

      JOURNAL OF CRYSTAL GROWTH
    75. Strasser, G; Gianordoli, S; Schrenk, W; Gornik, E; Mucklich, A; Helm, M
      MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers

      JOURNAL OF CRYSTAL GROWTH
    76. Yi, Q; Bo, BX; Zhang, BS; Gao, X; Zhang, XD; Shi, JW
      High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets

      JOURNAL OF CRYSTAL GROWTH
    77. Baoxue, B; Yi, B; Xin, G; Guotong, D; Dingsan, G
      High-power AlGaAs/GaAs broad-area lasers grown by MBE

      JOURNAL OF CRYSTAL GROWTH
    78. Mayer, B; Reithmaier, JP; Forchel, A
      Tertiarybutylarsine (TBAs) and -phosphine (TBP) as group V-precursors for gas source molecular beam epitaxy for optoelectronic applications

      JOURNAL OF CRYSTAL GROWTH
    79. Boehm, G; Ortsiefer, M; Shau, R; Koehler, F; Meyer, R; Amann, MC
      AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers

      JOURNAL OF CRYSTAL GROWTH
    80. Saarinen, M; Xiang, N; Vilokkinen, V; Melanen, P; Orsila, S; Uusimaa, P; Savolainen, P; Toivonen, M; Pessa, M
      Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    81. Zhang, YG; Chen, JX; Chen, YQ; Qi, M; Li, AZ; Frojdh, K; Stoltz, B
      Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

      JOURNAL OF CRYSTAL GROWTH
    82. Kuang, GK; Bohm, G; Grau, M; Rosel, G; Amann, MC
      Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

      JOURNAL OF CRYSTAL GROWTH
    83. Chen, JX; Li, AZ; Chen, YQ; Guo, FM; Lin, C; Zhang, YG; Qi, M
      Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers

      JOURNAL OF CRYSTAL GROWTH
    84. Wu, GZ; Wang, XH; Zheng, Q; Ren, DC; Zhang, XD
      InGaAs/InGaAsP microdisk lasers grown by GSMBE

      JOURNAL OF CRYSTAL GROWTH
    85. Spruytte, SG; Larson, MC; Wampler, W; Coldren, CW; Petersen, HE; Harris, JS
      Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    86. Kitatani, T; Kondow, M; Tanaka, T
      Molecular beam epitaxy of GaInNAs by using solid source arsenic

      JOURNAL OF CRYSTAL GROWTH
    87. Hashimoto, A; Furuhata, T; Kitano, T; Nguyen, AK; Masuda, A; Yamamoto, A
      RF-MBE growth and Raman scattering characterization of lattice-matched GaInNAs on GaAs(001) substrates

      JOURNAL OF CRYSTAL GROWTH
    88. Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M
      Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    89. Egorov, AY; Bernklau, D; Borchert, B; Illek, S; Livshits, D; Rucki, A; Schuster, M; Kaschner, A; Hoffmann, A; Dumitras, G; Amann, MC; Riechert, H
      Growth of high quality InGaAsN heterostructures and their laser application

      JOURNAL OF CRYSTAL GROWTH
    90. Harmand, JC; Ungaro, G; Ramos, J; Rao, EVK; Saint-Girons, G; Teissier, R; Le Roux, G; Largeau, L; Patriarche, G
      Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission

      JOURNAL OF CRYSTAL GROWTH
    91. Zhang, YG; Li, AZ; Zheng, YL; Lin, C; Jian, GZ
      MBE grown 2.0 mu m InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes

      JOURNAL OF CRYSTAL GROWTH
    92. Wilk, A; Fraisse, B; Christol, P; Boissier, G; Grech, P; El Gazouli, M; Rouillard, Y; Baranov, AN; Joullie, A
      MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m

      JOURNAL OF CRYSTAL GROWTH
    93. Lin, C; Li, AZ
      Temperature and injection current dependencies of 2 mu m InGaAsSb/AlGaAsSbmultiple quantum-well ridge-waveguide lasers

      JOURNAL OF CRYSTAL GROWTH
    94. Simanowski, S; Mermelstein, C; Walther, M; Herres, N; Kiefer, R; Rattunde, M; Schmitz, J; Wagner, J; Weimann, G
      Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation

      JOURNAL OF CRYSTAL GROWTH
    95. Mendez-Garcia, VH; Lopez-Lopez, M; Lastras-Martinez, A; Vidal, MA; Luyo-Alvarado, J; Melendez-Lira, M; Momose, K; Yonezu, H
      Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates

      JOURNAL OF CRYSTAL GROWTH
    96. Leonardi, K; Passow, T; Klude, M; Hommel, D
      Growth of ZnCdSe quantum wells at low substrate temperatures using migration enhanced epitaxy

      JOURNAL OF CRYSTAL GROWTH
    97. Wang, ZG; Chen, YH; Liu, FQ; Xu, B
      Self-assembled quantum dots, wires and quantum-dot lasers

      JOURNAL OF CRYSTAL GROWTH
    98. Ferdos, F; Sadeghi, M; Zhao, QX; Wang, SM; Larsson, A
      Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 mu m luminescence

      JOURNAL OF CRYSTAL GROWTH
    99. Klopf, F; Reithmaier, JP; Forchel, A
      Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasersemitting at 980 nm

      JOURNAL OF CRYSTAL GROWTH
    100. Ustinov, VM; Zhukov, AE; Maleev, NA; Kovsh, AR; Mikhrin, SS; Volovik, BV; Musikhin, YG; Shernyakov, YM; Maximov, MV; Tsatsul'nikov, AF; Ledentsov, NN; Alferov, ZI; Lott, JA; Bimberg, D
      1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/01/21 alle ore 06:45:46