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1. Griese, E
   A high-performance hybrid electrical-optical interconnection technology for high-speed electronic systems
   IEEE TRANSACTIONS ON ADVANCED PACKAGING
   
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   Application of semiconductor light sources for investigations of photochemical reactions
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3. Yakovlev, YP; Danilova, AP; Imenkov, AN; Kolchanova, NM; Sherstnev, VV
   Tunable 3.3 mu m InAsSb/InAsSbP diode lasers: a new concept of fast lasingdue to nonlinear optical effects
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6. Davis, RF; Gehrke, T; Linthicum, KJ; Rajagopal, P; Roskowski, AM; Zheleva, T; Preble, EA; Zorman, CA; Mehregany, M; Schwarz, U; Schuck, J; Grober, R
   Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
   MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
   
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7. Eliseev, PG; Li, H; Liu, GT; Stintz, A; Newell, TC; Lester, LF; Malloy, KJ
   Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
   
   P.G. Eliseev et al., "Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers", IEEE S T QU, 7(2), 2001, pp. 135-142
8. Erbert, G; Beister, G; Hulsewede, R; Knauer, A; Pittroff, W; Sebastian, J; Wenzel, H; Weyers, M; Trankle, G
   High-power highly reliable Al-free 940-nm diode lasers
   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
   
   G. Erbert et al., "High-power highly reliable Al-free 940-nm diode lasers", IEEE S T QU, 7(2), 2001, pp. 143-148
9. Fischer, MO; Reinhardt, M; Forchel, A
   Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-mu m range
   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
   
   M.O. Fischer et al., "Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-mu m range", IEEE S T QU, 7(2), 2001, pp. 149-151
10. Jiang, LA; Grein, ME; Haus, HA; Ippen, EP
    Noise of mode-locked semiconductor lasers
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    
    L.A. Jiang et al., "Noise of mode-locked semiconductor lasers", IEEE S T QU, 7(2), 2001, pp. 159-167
11. Kawazu, Z; Tashiro, Y; Shima, A; Suzuki, D; Nishiguchi, H; Yagi, T; Omura, E
    Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    
    Z. Kawazu et al., "Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure", IEEE S T QU, 7(2), 2001, pp. 184-187
12. Lee, SL
    Analytical formula of wavelength-dependent transparent current and its implications for designing wavelength sensors and WDM lasers
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    
    S.L. Lee, "Analytical formula of wavelength-dependent transparent current and its implications for designing wavelength sensors and WDM lasers", IEEE S T QU, 7(2), 2001, pp. 201-209
13. Sebastian, J; Beister, G; Bugge, F; Buhrandt, F; Erbert, G; Hansel, HG; Hulsewede, R; Knauer, A; Pittroff, W; Staske, R; Schroder, M; Wenzel, H; Weyers, M; Trankle, G
    High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    
    J. Sebastian et al., "High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence", IEEE S T QU, 7(2), 2001, pp. 334-339
14. Strassburg, M; Schulz, O; Pohl, UW; Bimberg, D; Itoh, S; Nakano, K; Ishibashi, A; Klude, M; Hommel, D
    A novel approach for improved green-emitting II-VI lasers
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    
    M. Strassburg et al., "A novel approach for improved green-emitting II-VI lasers", IEEE S T QU, 7(2), 2001, pp. 371-375
15. Haberer, ED; Chen, CH; Hansen, M; Keller, S; DenBaars, SP; Mishra, UK; Hu, EL
    Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN
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16. Legge, M; Bacher, G; Bader, S; Kummell, T; Forchel, A; Nurnberger, J; Schumacher, C; Faschinger, W; Landwehr, G
    Selective ultrahigh vacuum dry etching process far ZnSe-based II-VI semiconductors
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17. Wang, JS; Lin, HH; Song, LW; Chen, GR
    Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy
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18. Georgobiani, AN; Gruzintsev, AN; Vorob'ev, MO; Kaiser, U; Richter, W; Khodos, II
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19. Georgobiani, AN; Gruzintsev, AN; Aminov, UA; Vorob'ev, MO; Khodos, II
    The edge ultraviolet luminescence of GaN : Zn films activated in a nitrogen plasma
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20. Gordeev, NY; Ivanov, SV; Kopchatov, VI; Novikov, II; Shubina, TV; Il'inskaya, ND; Kop'ev, PS; Reuscher, G; Waag, A; Landwehr, G
    Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers
    SEMICONDUCTORS
    
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21. Li, GX; Li, FL; Zhu, SY
    Quantum interference between decay channels of a three-level atom in a multilayer dielectric medium - art. no. 013819
    PHYSICAL REVIEW A
    
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22. Huang, YD; Okuda, T; Sato, K; Muroya, Y; Sasaki, T; Kobayashi, K
    Isolator-free 2.5-Gb/s 80-km transmission by directly modulated lambda/8 phase-shifted DFB-LDs under negative feedback effect of mirror loss
    IEEE PHOTONICS TECHNOLOGY LETTERS
    
    Y.D. Huang et al., "Isolator-free 2.5-Gb/s 80-km transmission by directly modulated lambda/8 phase-shifted DFB-LDs under negative feedback effect of mirror loss", IEEE PHOTON, 13(3), 2001, pp. 245-247
23. Xue, QZ; Xue, QK; Kuwano, S; Nakayama, K; Sakurai, T
    Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)
    CHINESE PHYSICS
    
    Q.Z. Xue et al., "Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)", CHIN PHYS, 10, 2001, pp. S157-S162
24. Zhang, XY; Li, ZR; Yan, WS; Wang, XG; Wei, SQ; Lu, KQ
    XAFS studies on local structures of nanocrystalline and crystalline GaN
    JOURNAL OF INFRARED AND MILLIMETER WAVES
    
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25. Kawakami, Y; Omae, K; Kaneta, A; Okamoto, K; Narukawa, Y; Mukai, T; Fujita, S
    In inhomogeneity and emission characteristics of InGaN
    JOURNAL OF PHYSICS-CONDENSED MATTER
    
    Y. Kawakami et al., "In inhomogeneity and emission characteristics of InGaN", J PHYS-COND, 13(32), 2001, pp. 6993-7010
26. Tjong, SC; Ho, HP; Lee, ST
    Development of single- and multi-layered metallic films on diamond by ion beam-assisted deposition
    DIAMOND AND RELATED MATERIALS
    
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27. Aperathitis, E; Cengher, D; Kayambaki, M; Androulidaki, M; Deligeorgis, G; Tsagaraki, K; Hatzopoulous, Z; Georgakilas, A
    Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
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28. Venger, YF; Semenova, GN; Korsunskaya, NE; Semtsiv, MP; Borkovskaya, LV; Sharibaev, M; Braylovsky, YY; Sadofyev, YG
    Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
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29. Cremades, A; Piqueras, J; Albrecht, M; Stutzmann, M; Strunk, HP
    Study of structural defects limiting the luminescence of InGaN single quantum wells
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    A. Cremades et al., "Study of structural defects limiting the luminescence of InGaN single quantum wells", MAT SCI E B, 80(1-3), 2001, pp. 313-317
30. Neu, G; Teisseire, M; Lemasson, P; Lahreche, H; Grandjean, N; Semond, F; Beaumont, B; Grzegory, I; Porowski, S; Triboulet, R
    Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors
    PHYSICA B
    
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31. Piwonski, T; Sajewicz, P; Kubica, JM; Zbroszczyk, M; Reginski, K; Mroziewicz, B; Bugajski, M
    Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    
    T. Piwonski et al., "Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy", MICROW OPT, 29(2), 2001, pp. 75-77
32. Chang, PC; Li, NY; Baca, AG; Hou, HQ; Monier, C; Laroche, JR; Ren, F; Pearton, SJ
    Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor
    IEEE ELECTRON DEVICE LETTERS
    
    P.C. Chang et al., "Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor", IEEE ELEC D, 22(3), 2001, pp. 113-115
33. Lee, SL; Pien, CT; Hsu, YY
    Operation principles of wavelength sensing using transparent properties ofsemiconductor optical diodes
    JOURNAL OF LIGHTWAVE TECHNOLOGY
    
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34. Dougherty, DJ; Muller, RE; Maker, PD; Forouhar, S
    Stitching-error reduction in gratings by shot-shifted electron-beam lithography
    JOURNAL OF LIGHTWAVE TECHNOLOGY
    
    D.J. Dougherty et al., "Stitching-error reduction in gratings by shot-shifted electron-beam lithography", J LIGHTW T, 19(10), 2001, pp. 1527-1531
35. Stchur, P; Yang, KX; Hou, XD; Sun, T; Michel, RG
    Laser excited atomic fluorescence spectrometry - a review
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
    
    P. Stchur et al., "Laser excited atomic fluorescence spectrometry - a review", SPECT ACT B, 56(9), 2001, pp. 1565-1592
36. Li, WS; Shen, ZX; Li, HY; Shen, DZ; Fan, XW
    Pressure dependence of photoluminescence of ZnTe/Zn1-xCdxTe strained-layersuperlattice
    JOURNAL OF RAMAN SPECTROSCOPY
    
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37. Choi, SC; Song, YH; Jeon, SL; Jang, HJ; Yang, GM; Cho, HK; Lee, JY
    Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structuresduring metalorganic chemical vapor deposition
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    
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38. Neugebauer, J
    Ab initio analysis of surface structure and adatom kinetics of group-III nitrides
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    
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39. Kim, JK; Kim, KJ; Kim, B; Kim, JN; Kwak, JS; Park, YJ; Lee, JL
    Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN
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40. Kim, JK; Kim, CC; Cho, TS; Je, JH; Kwak, JS; Park, YJ; Lee, JL
    Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN
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41. Knauer, A; Wenzel, H; Erbert, G; Sumpf, B; Weyers, M
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42. Fornari, R; Bosi, M; Bersani, D; Attolini, G; Lottici, PP; Pelosi, C
    Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy
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43. Shimaoka, G; Aoki, T; Nakanishi, Y; Hatanaka, Y; Udagawa, T
    Structure and optical properties of (001)GaAs surfaces nitrided in plasma-assisted NH3 gas
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44. Ho, HP; Lo, KC; Chu, PK; Chan, KS; Li, J; Kwok, DTK; Pun, EYB; Marsh, JH
    Controlled intermixing in InGaAsP multiquantum wells by plasma immersion ion implantation of argon
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
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45. Kim, HM; Kang, TW
    Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD
    MATERIALS LETTERS
    
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46. Kim, HM; Oh, JE; Kang, TW
    Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method
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47. Li, W; Pessa, M; Toivonen, J; Lipsanen, H
    Doping and carrier transport in Ga1-3xIn3xNxAs1-x alloys - art. no. 113308
    PHYSICAL REVIEW B
    
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48. Wu, J; Shan, W; Walukiewicz, W; Yu, KM; Ager, JW; Haller, EE; Xin, HP; Tu, CW
    Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells - art. no. 085320
    PHYSICAL REVIEW B
    
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49. Wang, LW
    Calculations of carrier localization in InxGa1-xN - art. no. 245107
    PHYSICAL REVIEW B
    
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50. Sun, CK; Chu, SW; Tai, SP; Keller, S; Abare, A; Mishra, UK; DenBaars, SP
    Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy
    SCANNING
    
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51. Lin, CF; Wu, BR; Laih, LW; Shih, TT
    Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers-superluminescent diodes
    OPTICS LETTERS
    
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52. Sidorin, Y; Shack, RV
    Measurement of laser diode astigmatism using the beam-line method
    OPTICAL ENGINEERING
    
    Y. Sidorin e R.V. Shack, "Measurement of laser diode astigmatism using the beam-line method", OPT ENG, 40(6), 2001, pp. 995-1000
53. Giuliani, G; Donati, S; Passerini, M; Bosch, T
    Angle measurement by injection detection in a laser diode
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54. McNally, PJ; Tuomi, T; Lowney, D; Jacobs, K; Danilewsky, AN; Rantamaki, R; O'Hare, M; Considine, L
    Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    
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55. Wu, J; Iordache, G; Summers, HD; Roberts, JS
    Optical characteristics of VCSEL pumped microchip lasers
    OPTICS COMMUNICATIONS
    
    J. Wu et al., "Optical characteristics of VCSEL pumped microchip lasers", OPT COMMUN, 196(1-6), 2001, pp. 251-256
56. Juang, C; Huang, CC; Hwang, TM; Juang, J; Lin, WW
    Optoelectronic delayed-feedback and chaos in quantum-well laser diodes
    OPTICS COMMUNICATIONS
    
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57. Feng, PX; Riley, JD; Leckey, RCG; Ley, L
    MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates
    JOURNAL OF PHYSICS D-APPLIED PHYSICS
    
    P.X. Feng et al., "MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates", J PHYS D, 34(9), 2001, pp. 1293-1300
58. Yoon, IT; Han, SY; Park, HL; Kim, TW
    Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    
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59. Cho, HK; Lee, JY; Jeon, SR; Yang, GM
    Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition
    JOURNAL OF CRYSTAL GROWTH
    
    H.K. Cho et al., "Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition", J CRYST GR, 233(4), 2001, pp. 667-672
60. Fewster, PF; Andrew, NL; Foxon, CT
    Microstructure and composition analysis of group III nitrides by X-ray scattering
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61. Xia, R; Xu, H; Harrison, I; Beaument, B; Andrianov, A; Dods, SRA; Morgan, JM; Larkins, EC
    Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs
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62. Traetta, G; Di Carlo, A; Reale, A; Lugli, P; Lomascolo, M; Passaseo, A; Cingolani, R; Bonfiglio, A; Berti, M; Napolitani, E; Natali, M; Sinha, SK; Drigo, AV
    Charge storage and screening of the internal field in GaN/AlGaN quantum wells
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63. Schwegler, V; Schad, SS; Scherer, M; Kamp, M; Ulu, G; Emsley, M; Unlu, MS; Lell, A; Bader, S; Hahne, B; Lugauer, HJ; Kuhn, F; Weimar, A; Harle, V
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64. Summers, HD; Smowton, PM; Blood, P; Dineen, M; Perks, RM; Bour, DP; Kneissel, M
    Spatially and spectrally resolved measurement of optical loss in InGaN laser structures
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65. Hangleiter, A; Heppel, S; Off, J; Kuhn, B; Scholz, F; Bader, S; Hahn, B; Harle, V
    Analysis of the threshold current in nitride-based lasers
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    A. Hangleiter et al., "Analysis of the threshold current in nitride-based lasers", J CRYST GR, 230(3-4), 2001, pp. 522-526
66. Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M
    Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers
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    W. Li et al., "Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers", J CRYST GR, 230(3-4), 2001, pp. 533-536
67. Scherer, M; Schwegler, V; Seyboth, M; Eberhard, F; Kirchner, C; Kamp, M; Ulu, G; Unlu, MS; Gruhler, R; Hollricher, O
    Characterization of etched facets for GaN-based lasers
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68. Dumont, J; Monroy, E; Munoz, E; Caudano, R; Sporken, R
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69. Namikawa, Y; Fujiwara, S; Kotani, T
    Al diffused conductive ZnSe substrates grown by physical vapor transport method
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70. Song, JS; Chang, JH; Cho, MW; Hanada, T; Yao, T
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71. Cho, AY; Sivco, DL; Ng, HM; Gmachl, C; Tredicucci, A; Hutchinson, AL; Chu, SNG; Capasso, F
    Quantum devices, MBE technology for the 21st century
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72. Bhattacharya, P; Krishna, S; Phillips, J; McCann, PJ; Namjou, K
    Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors
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73. Miao, ZL; Lu, W; Chen, PP; Li, ZF; Cai, WY; Yuan, XZ; Liu, P; Shi, GL; Xu, WL; Shen, XC; Chen, CM; Zhu, DZ; Hu, J; Li, MQ
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74. Hatzopoulos, Z; Cengher, D; Deligeorgis, G; Androulidaki, M; Aperathitis, E; Halkias, G; Georgakilas, A
    Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding
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75. Strasser, G; Gianordoli, S; Schrenk, W; Gornik, E; Mucklich, A; Helm, M
    MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers
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    G. Strasser et al., "MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers", J CRYST GR, 227, 2001, pp. 197-201
76. Yi, Q; Bo, BX; Zhang, BS; Gao, X; Zhang, XD; Shi, JW
    High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets
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77. Baoxue, B; Yi, B; Xin, G; Guotong, D; Dingsan, G
    High-power AlGaAs/GaAs broad-area lasers grown by MBE
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78. Mayer, B; Reithmaier, JP; Forchel, A
    Tertiarybutylarsine (TBAs) and -phosphine (TBP) as group V-precursors for gas source molecular beam epitaxy for optoelectronic applications
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79. Boehm, G; Ortsiefer, M; Shau, R; Koehler, F; Meyer, R; Amann, MC
    AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers
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80. Saarinen, M; Xiang, N; Vilokkinen, V; Melanen, P; Orsila, S; Uusimaa, P; Savolainen, P; Toivonen, M; Pessa, M
    Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
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81. Zhang, YG; Chen, JX; Chen, YQ; Qi, M; Li, AZ; Frojdh, K; Stoltz, B
    Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
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    Y.G. Zhang et al., "Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE", J CRYST GR, 227, 2001, pp. 329-333
82. Kuang, GK; Bohm, G; Grau, M; Rosel, G; Amann, MC
    Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE
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    G.K. Kuang et al., "Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE", J CRYST GR, 227, 2001, pp. 334-337
83. Chen, JX; Li, AZ; Chen, YQ; Guo, FM; Lin, C; Zhang, YG; Qi, M
    Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
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    J.X. Chen et al., "Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers", J CRYST GR, 227, 2001, pp. 338-342
84. Wu, GZ; Wang, XH; Zheng, Q; Ren, DC; Zhang, XD
    InGaAs/InGaAsP microdisk lasers grown by GSMBE
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    G.Z. Wu et al., "InGaAs/InGaAsP microdisk lasers grown by GSMBE", J CRYST GR, 227, 2001, pp. 343-345
85. Spruytte, SG; Larson, MC; Wampler, W; Coldren, CW; Petersen, HE; Harris, JS
    Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy
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    S.G. Spruytte et al., "Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy", J CRYST GR, 227, 2001, pp. 506-515
86. Kitatani, T; Kondow, M; Tanaka, T
    Molecular beam epitaxy of GaInNAs by using solid source arsenic
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87. Hashimoto, A; Furuhata, T; Kitano, T; Nguyen, AK; Masuda, A; Yamamoto, A
    RF-MBE growth and Raman scattering characterization of lattice-matched GaInNAs on GaAs(001) substrates
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88. Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M
    Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy
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89. Egorov, AY; Bernklau, D; Borchert, B; Illek, S; Livshits, D; Rucki, A; Schuster, M; Kaschner, A; Hoffmann, A; Dumitras, G; Amann, MC; Riechert, H
    Growth of high quality InGaAsN heterostructures and their laser application
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90. Harmand, JC; Ungaro, G; Ramos, J; Rao, EVK; Saint-Girons, G; Teissier, R; Le Roux, G; Largeau, L; Patriarche, G
    Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission
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    J.C. Harmand et al., "Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission", J CRYST GR, 227, 2001, pp. 553-557
91. Zhang, YG; Li, AZ; Zheng, YL; Lin, C; Jian, GZ
    MBE grown 2.0 mu m InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
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    Y.G. Zhang et al., "MBE grown 2.0 mu m InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes", J CRYST GR, 227, 2001, pp. 582-585
92. Wilk, A; Fraisse, B; Christol, P; Boissier, G; Grech, P; El Gazouli, M; Rouillard, Y; Baranov, AN; Joullie, A
    MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m
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    A. Wilk et al., "MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m", J CRYST GR, 227, 2001, pp. 586-590
93. Lin, C; Li, AZ
    Temperature and injection current dependencies of 2 mu m InGaAsSb/AlGaAsSbmultiple quantum-well ridge-waveguide lasers
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    C. Lin e A.Z. Li, "Temperature and injection current dependencies of 2 mu m InGaAsSb/AlGaAsSbmultiple quantum-well ridge-waveguide lasers", J CRYST GR, 227, 2001, pp. 591-594
94. Simanowski, S; Mermelstein, C; Walther, M; Herres, N; Kiefer, R; Rattunde, M; Schmitz, J; Wagner, J; Weimann, G
    Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation
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    S. Simanowski et al., "Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation", J CRYST GR, 227, 2001, pp. 595-599
95. Mendez-Garcia, VH; Lopez-Lopez, M; Lastras-Martinez, A; Vidal, MA; Luyo-Alvarado, J; Melendez-Lira, M; Momose, K; Yonezu, H
    Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates
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96. Leonardi, K; Passow, T; Klude, M; Hommel, D
    Growth of ZnCdSe quantum wells at low substrate temperatures using migration enhanced epitaxy
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97. Wang, ZG; Chen, YH; Liu, FQ; Xu, B
    Self-assembled quantum dots, wires and quantum-dot lasers
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    Z.G. Wang et al., "Self-assembled quantum dots, wires and quantum-dot lasers", J CRYST GR, 227, 2001, pp. 1132-1139
98. Ferdos, F; Sadeghi, M; Zhao, QX; Wang, SM; Larsson, A
    Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 mu m luminescence
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    F. Ferdos et al., "Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 mu m luminescence", J CRYST GR, 227, 2001, pp. 1140-1145
99. Klopf, F; Reithmaier, JP; Forchel, A
    Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasersemitting at 980 nm
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    F. Klopf et al., "Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasersemitting at 980 nm", J CRYST GR, 227, 2001, pp. 1151-1154
100. Ustinov, VM; Zhukov, AE; Maleev, NA; Kovsh, AR; Mikhrin, SS; Volovik, BV; Musikhin, YG; Shernyakov, YM; Maximov, MV; Tsatsul'nikov, AF; Ledentsov, NN; Alferov, ZI; Lott, JA; Bimberg, D
     1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
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     V.M. Ustinov et al., "1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy", J CRYST GR, 227, 2001, pp. 1155-1161