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La ricerca find articoli where soggetti phrase all words 'INSB' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 401 riferimenti
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    1. Dold, P; Szofran, FR; Benza, KW
      Detached growth of gallium doped germanium

      JOURNAL OF CRYSTAL GROWTH
    2. Fernandez-Madrigal, FJ; Lavela, P; Perez-Vicente, C; Tirado, JL
      Electrochemical reactions of polycrystalline CrSb2 in lithium batteries

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    3. Declemy, A; Sauvage, T; Kotai, E; Leveque, P; Abd El-Ati, MI
      Be- and Mg-ion implantation-induced damage in InSb

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    4. Ashley, T
      Type-I InSb-based mid-infrared diode lasers

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    5. Kamilov, IK; Zhokhov, VZ
      Random acoustoelectric oscillations of current in piezoelectric semiconductors

      PHYSICS OF THE SOLID STATE
    6. Chen, Y; Li, GH; Zhu, ZM; Han, HX; Wang, ZP; Zhou, W; Wang, ZG
      Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    7. Ge, PW; Nishinaga, T; Li, CR; Huo, CR; Nakamura, T; Huang, WD; Voloshin, AE; Lomov, AA
      Growth of GaSb single crystal in space

      SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
    8. Wang, Q; Lu, KQ; Li, YX
      The relationship between electrical resistivity, thermopower and temperature for liquid InSb

      ACTA PHYSICA SINICA
    9. Rerat, M; Cheng, WD; Pandey, R
      First-principles calculations of nonlinear optical susceptibility of inorganic materials

      JOURNAL OF PHYSICS-CONDENSED MATTER
    10. Kuri, G; Materlik, G; Hagen, V; Wiesendanger, R
      Surface morphology of MgO (100) crystals implanted with MeV Al+ and Al-2(+) ions

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    11. Yadav, AD; Rao, BV; Dubey, SK; Gadkari, DB
      Electrical characteristics of low energy tellurium implanted indium antimonide

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    12. Mock, P; Booker, GR; Mason, NJ; Nicholas, RJ; Aphandery, E; Topuria, T; Browning, ND
      MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    13. Bang, CY; Lee, MS; Kim, TJ; Kim, YD; Aspnes, DE; Yu, YM; O, BS; Choi, YD
      Above bandgap optical properties of ZnS and ZnS1-xTex alloys grown by using hot-wall epitaxy

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    14. Ackland, GJ
      Theory of high pressure phases of Group-IV and III-V semiconductors

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    15. Li, GH; Chen, Y; Fung, ZL; Ding, K; Han, HX; Zhou, W; Wang, ZG
      Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    16. Kosikova, J; Leitner, J; Pangrac, J; Melichar, K; Jurek, K; Drbohlav, I; Stejskal, J
      Ga1-xInxSb-MOVPE growth and thermodynamic model

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    17. Udayashankar, NK; Bhat, HL
      Growth and characterization of indium antimonide and gallium antimonide crystals

      BULLETIN OF MATERIALS SCIENCE
    18. Gadkari, DB; Shashidharan, P; Lal, KB; Arora, BM
      Influence of crystal-melt interface shape on self-seeding and single crystalline quality

      BULLETIN OF MATERIALS SCIENCE
    19. Hecht, JD; Frost, F; Chasse, T; Hirsch, D; Neumann, H; Schindler, A; Bigl, F
      In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

      APPLIED SURFACE SCIENCE
    20. Rao, BV; Gruznev, D; Tambo, T; Tatsuyama, C
      Sb adsorption on Si(111)-In(4 x 1) surface phase

      APPLIED SURFACE SCIENCE
    21. Matsumoto, T; Souno, Y; Tatsuoka, H; Nakanishi, Y; Kuwabara, H
      Structural properties of zinc-blende MnTe layers grown by hot-wall epitaxy

      APPLIED SURFACE SCIENCE
    22. Latham, CD; Jones, R; Oberg, S; Briddon, PR
      Density-functional calculations of carbon doping in III-V compound semiconductors - art. no. 155202

      PHYSICAL REVIEW B
    23. Betti, MG; Corradini, V; Bertoni, G; Casarini, P; Mariani, C; Abramo, A
      Density of states of a two-dimensional electron gas at semiconductor surfaces - art. no. 155315

      PHYSICAL REVIEW B
    24. Giovanelli, L; Von Schenck, H; Sinner-Hettenbach, M; Papageorgiou, N; Gothelid, M; Le Lay, G
      Synchrotron radiation photoelectron spectroscopy study of Pb-Pc thin filmson InSb(100)-(4x2)/c(8x2)

      SURFACE SCIENCE
    25. Bahng, JH; Jang, MS; Lee, M; Choi, JC; Park, HL; Kim, KJ; Lee, C
      Strain dependence and deformation potential of the E-1 and E-1+Delta(1) transitions of ZnTe grown on a GaAs (001) substrate

      SOLID STATE COMMUNICATIONS
    26. Rousse, A; Rischel, C; Fourmaux, S; Uschmann, I; Sebban, S; Grillon, G; Balcou, P; Foster, E; Geindre, JP; Audebert, P; Gauthier, JC; Hulin, D
      Non-thermal melting in semiconductors measured at femtosecond resolution

      NATURE
    27. Krier, A; Huang, XL; Hammiche, A
      Liquid phase epitaxial growth and morphology of InSb quantum dots

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    28. Hayakawa, Y; Krishnamurthy, D; Ohsawa, H; Nakano, H; Koyama, T; Kumagawa, M
      Study of Al segregation phenomenon during Czochralski growth of AlxGa1-xSb

      JOURNAL OF CRYSTAL GROWTH
    29. Ozawa, T; Hayakawa, Y; Balakrishnan, K; Ohonishi, F; Koyama, T; Kumagawa, M
      Growth of InxGa1-xAs bulk mixed crystals with a uniform composition by therotational Bridgman method

      JOURNAL OF CRYSTAL GROWTH
    30. Lee, H; Kim, SM; Park, YJ; Kim, EK
      Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at thethreshold of quantum dot formation

      JOURNAL OF APPLIED PHYSICS
    31. Miyazaki, T; Fujimaki, T; Adachi, S; Ohtsuka, K
      Properties of GaN films deposited on Si(111) by radio-frequency-magnetron sputtering

      JOURNAL OF APPLIED PHYSICS
    32. Chung, SJ; Cha, OH; Kim, YS; Hong, CH; Lee, HJ; Jeong, MS; White, JO; Suh, EK
      Yellow luminescence and persistent photoconductivity of undoped n-type GaN

      JOURNAL OF APPLIED PHYSICS
    33. Shashidharan, P; Gokhale, NA; Gadkari, DB; Lal, KB; Gokhale, MR; Arora, BM
      Effect of In content in InxGa1-xSb on breaking of ampoule during growth byvertical directional solidification

      INDIAN JOURNAL OF PURE & APPLIED PHYSICS
    34. Yong, CK; Sloan, R; Davis, LE
      A Ka-band indium-antimonide junction circulator

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    35. Boero, G; Besse, PA; Popovic, R
      Hall detection of magnetic resonance

      APPLIED PHYSICS LETTERS
    36. Rao, BV; Gruznev, DV; Tambo, T; Tatsuyama, C
      Structural transformations during Sb adsorption on Si(111)-In(4 x 1) reconstruction

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    37. Fujii, M; Okamoto, T; Haraguchi, M; Fukui, M; Al-Bader, SJ
      Finite-difference time-domain analysis on nonlinear Fabry-Perot resonator in optical waveguide geometry

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    38. Ueno, K; Saiki, K; Koma, A
      Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    39. Jeng, MJ; Wang, HT; Chang, LB; Lin, RM
      Surface passivation using P2S5/(NH4)(2)S-x and hydrogen fluoride solutionson Ag/n-InAs and Ag/n-InSb Schottky diodes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    40. Yodokawa, S; Kosaka, S; Obunai, T
      Nonreciprocal propagation characteristics of 526 GHz submillimeter-wave intransversely magnetized two-layer parallel-plate waveguide containing p-InSb slab

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. Awad, AH
      Hole-phonon scattering and thermal conductivity of p-type InSb from 2 to 100 K

      JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
    42. Mock, P; Booker, GR; Mason, NJ; Alphandery, E; Nicholas, RJ
      MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM

      IEE PROCEEDINGS-OPTOELECTRONICS
    43. Frost, F; Lippold, G; Schindler, A; Bigl, F
      Morphological, structural and electronic damage on InAs and InSb surfaces induced by (reactive) ion beam etching

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    44. Chen, BL; Lu, W; Wang, ZG; Yang, H; Wang, H
      Characterization for 64x64 InSb photovoltaic infrared detector array

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    45. McLaughlin, R; Chen, Q; Corchia, A; Ciesla, CM; Arnone, DD; Zhang, XC; Jones, GAC; Lindfield, EH; Pepper, M
      Enhanced coherent terahertz emission from indium arsenide

      JOURNAL OF MODERN OPTICS
    46. Kozlov, VM; Bicelli, LP
      Influence of temperature and of structure of antimony substrate on galliumdiffusion into the GaSb semiconductor compound

      JOURNAL OF ALLOYS AND COMPOUNDS
    47. Chellali, M; Akkal, B; Tizi, S; Benamara, Z; Gruzza, B; Robert, C; Bideux, L
      Effect of InSb layer on the interfacial and electrical properties in the structures based on InP

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    48. Kang, JY; Fukuda, T
      Growth exploration of compositionally uniform bulk semiconductors under a high magnetic field of 80 000 Gauss

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    49. Yang, TR; Kuri, G
      Far-infrared absorption and Raman scattering studies in MeV C+- and C-2(+)-implanted InSb(111) crystals

      PHYSICA B
    50. Yang, TR
      Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

      PHYSICA B
    51. Yang, TR; Kuri, G; Lu, CC
      Far-infrared absorption studies in MeV C+ and C-2(+) implanted InSb (111) crystals

      PHYSICA B
    52. Didschuns, I; Fleischer, K; Frisch, AM; Schilbe, P; Esser, N; Richter, W; Luders, K
      The electrical and structural properties of granular superconducting Sn onInSb(110)

      PHYSICA B
    53. Klimeck, G; Bowen, RC; Boykin, TB; Cwik, TA
      sp3s* tight-binding parameters for transport simulations in compound semiconductors

      SUPERLATTICES AND MICROSTRUCTURES
    54. Tomich, DH; Eyink, KG; Grazulis, L; Brown, GL; Szmulowicz, F; Mahalingam, K; Seaford, ML; Kuo, CH; Hwang, WY; Lin, CH
      Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

      JOURNAL OF ELECTRONIC MATERIALS
    55. Gauss, N; Jansen, AGM; Julien, MH; Fagot-Revurat, Y; Horvatic, M; Wyder, P
      Investigation of localization in using hyperfine interaction

      EUROPHYSICS LETTERS
    56. Haworth, L; Lu, J; Westwood, DI; MacDonald, JE
      Atomic hydrogen cleaning, nitriding and annealing InSb (100)

      APPLIED SURFACE SCIENCE
    57. Aristov, VY; Zhilin, VM; Grupp, C; Taleb-Ibrahimi, A; Kim, HJ; Mangat, PS; Soukiassian, P; Le Lay, G
      Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces

      APPLIED SURFACE SCIENCE
    58. Haworth, L; Lu, J; Westwood, DI; Macdonald, JE
      Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)

      APPLIED SURFACE SCIENCE
    59. Rao, BV; Okamoto, T; Shinmura, A; Gruznev, D; Tambo, T; Tatsuyama, C
      Role of In(4 x 1) superstructure on the heteroepitaxy of InSb on Si(111) substrate

      APPLIED SURFACE SCIENCE
    60. Kim, TW; Lee, DU; Lee, JH; Yoon, YS; Lee, JY; Park, HL
      Surface and interface microstructural properties of Ru thin films grown onInSb (111) substrates at room temperature

      APPLIED SURFACE SCIENCE
    61. Mori, M; Nizawa, Y; Nishi, Y; Mae, K; Tambo, T; Tatsuyama, C
      Effect of current flow direction on the heteroepitaxial growth of InSb films on Ge/Si(001) substrate heated by direct current

      APPLIED SURFACE SCIENCE
    62. Rao, BV; Okamoto, T; Shinmura, A; Gruznev, D; Mori, M; Tambo, T; Tatsuyama, C
      Growth temperature effect on the heteroepitaxy of InSb on Si(111)

      APPLIED SURFACE SCIENCE
    63. Tutuncu, HM; Miotto, R; Srivastava, GP
      Phonons on II-VI (110) semiconductor surfaces

      PHYSICAL REVIEW B
    64. Murzin, SS
      Electron transport in a magnetic field in the ultra-quantum limit

      USPEKHI FIZICHESKIKH NAUK
    65. Huerta-Ruelas, J; Lopez-Lopez, M; Zelaya-Angel, O
      Observation of thermal desorption and MBE growth rate using laser light scattering

      THIN SOLID FILMS
    66. Djurisic, AB; Li, EH
      Optical dielectric function of semiconductors

      THIN SOLID FILMS
    67. Edwards, NV; Jarrendahl, K; Aspnes, DE; Robbie, K; Powell, GD; Cobet, C; Esser, N; Richter, W; Madsen, LD
      Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry

      SURFACE SCIENCE
    68. Yong, K; Ekerdt, JG
      Surface reaction of triethylgallium and triethylantimony on GaSb(100)-(1 x3)

      SURFACE SCIENCE
    69. Modesti, S; Falasca, A; Polentarutti, M; Betti, MG; De Renzi, V; Mariani, C
      Evolution of one-dimensional Cs chains on InAs(110) as determined by scanning-tunneling microscopy and core-level spectroscopy

      SURFACE SCIENCE
    70. Sugihara, K; Kobori, H; Tsubouchi, N; Sugio, A; Fujii, K; Ohyama, T
      Linewidth study of electric dipole induced spin resonance in uniaxially stressed n-InSb for far-infrared region: Theoretical

      JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
    71. Kobori, H; Sugio, A; Tsubouchi, N; Fujii, K; Ohyama, T; Sugihara, K
      Linewidth study of electric dipole induced spin resonance in uniaxially stressed n-InSb in far infrared regions: Experimental

      JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
    72. Dixit, VK; Rodrigues, BV; Bhat, HL
      Growth of InSb(1-x)Bix crystals by rotatory Bridgman method and their characterization

      JOURNAL OF CRYSTAL GROWTH
    73. Hayakawa, Y; Okano, Y; Hirata, A; Imaishi, N; Kumagiri, Y; Zhong, X; Xie, X; Yuan, B; Wu, F; Liu, H; Yamaguchi, T; Kumagawa, M
      Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

      JOURNAL OF CRYSTAL GROWTH
    74. Suk, MJ; Leonartz, K
      Halo growth during unidirectional solidification of camphor-naphthalene eutectic system

      JOURNAL OF CRYSTAL GROWTH
    75. Marin, C; Ostrogorsky, AG
      Bulk growth of quasi-binary quaternary alloys

      JOURNAL OF CRYSTAL GROWTH
    76. Mohan, P; Senguttuvan, N; Babu, SM; Ramasamy, P
      Growth of inclusion-free InSb crystals by vertical Bridgman method

      JOURNAL OF CRYSTAL GROWTH
    77. Biefeld, RM; Phillips, JD
      Growth of InSb on GaAs using InAlSb buffer layers

      JOURNAL OF CRYSTAL GROWTH
    78. Weng, X; Goldman, RS; Partin, DL; Heremans, JP
      Evolution of structural and electronic properties of highly mismatched InSb films

      JOURNAL OF APPLIED PHYSICS
    79. Magno, R; Bennett, BR; Glaser, ER
      Deep level transient capacitance measurements of GaSb self-assembled quantum dots

      JOURNAL OF APPLIED PHYSICS
    80. Wang, Q; Chen, XM; Li, CX; Lu, KQ
      Electrical resistivity of molten indium-antimony alloys

      JOURNAL OF APPLIED PHYSICS
    81. Iyer, S; Mulugeta, S; Collis, W; Venkatraman, S; Bajaj, KK; Coli, G
      Photoreflectance studies of Te-doped GaSb at the E-0+Delta(0) transition

      JOURNAL OF APPLIED PHYSICS
    82. Krier, A; Huang, XL; Hammiche, A
      Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phaseepitaxy

      APPLIED PHYSICS LETTERS
    83. Dai, N; Khodaparast, GA; Brown, F; Doezema, RE; Chung, SJ; Santos, MB
      Band offset determination in the strained-layer InSb/AlxIn1-xSb system

      APPLIED PHYSICS LETTERS
    84. Chen, Y; Li, GH; Zhu, ZM; Han, HX; Wang, ZP; Zhou, W; Wang, ZG
      Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate

      APPLIED PHYSICS LETTERS
    85. Rao, BV; Gruznev, D; Tambo, T; Tatsuyama, C
      Effect of In(4 x 1) reconstruction induced interface modification on the growth behavior of InSb on Si(111) substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. Goto, H; Tsunashima, M; Kanno, Y; Yamagata, Y; Kuze, N; Yamanouchi, K
      Development of high-efficiency strip-coupled surface acoustic wave convolver using GaSb/InSb/AlGaAsSb/LiNbO3 structures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    87. Koike, K; Li, SW; Yano, M
      Molecular beam epitaxial growth and characterization of the vertically aligned InAs quantum dots embedded in Al0.5Ga0.5As

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    88. Huerta-Ruelas, J; Lopez-Lopez, M; Zelaya-Angel, O
      Molecular beam epitaxial growth of CdTe layers on InSb(111)A and B polar substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    89. Balasubramanian, K; Latifzadeh-Masoudipour, L
      Spectroscopic properties and potential energy surfaces of electronic states of SbCl2, SbBr2, SbCl2+ and SbBr2+

      JOURNAL OF PHYSICAL CHEMISTRY A
    90. Chen, XM; Wang, Q; Lu, KQ
      Temperature and time dependence of the density of molten indium antimonidemeasured by an improved Archimedean method

      JOURNAL OF PHYSICS-CONDENSED MATTER
    91. Kozlov, VM; Agrigento, V; Mussati, G; Bicelli, LP
      Influence of the structure of the electrodeposited antimony substrate on indium diffusion

      JOURNAL OF ALLOYS AND COMPOUNDS
    92. Hu, XD; Nori, F
      Phonon squeezed states: quantum noise reduction in solids

      PHYSICA B
    93. Mezouar, M; Le Bihan, T; Libotte, H; Le Godec, Y; Hausermann, D
      Paris-Edinburgh large-volume cell coupled with a fast imaging-plate systemfor structural investigation at high pressure and high temperature

      JOURNAL OF SYNCHROTRON RADIATION
    94. Passler, R
      Parameter sets due to fittings of the temperature dependencies of fundamental bandgaps in semiconductors

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    95. Berry, A
      The synthesis and characterization of isobutylantimony compounds

      POLYHEDRON
    96. Gao, HH; Krier, A; Sherstnev, VV
      High quality InAs grown by liquid phase epitaxy using gadolinium gettering

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    97. Djurisic, AB; Li, EH
      Modelling the optical constants of GaAs: excitonic effects at E-1, E-1+Delta(1) critical points

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    98. Venkataraghavan, R; Udayashankar, NK; Rodrigues, BV; Rao, KSRK; Bhat, HL
      Design and fabrication of liquid phase epitaxy system

      BULLETIN OF MATERIALS SCIENCE
    99. Campbell, TA; Koster, JN
      Growth rate effects during indium-antimony crystal growth

      CRYSTAL RESEARCH AND TECHNOLOGY
    100. Tscheuschner, D; Ratke, L
      Crystallisation of InSb in aerogel crucibles

      CRYSTAL RESEARCH AND TECHNOLOGY


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Documento generato il 11/08/20 alle ore 21:09:33