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    1. Kehias, L; Jenkins, T; Quach, T; Watson, P; Welch, R; Worley, R; Oki, AK; Yen, HC; Gutierrez-Aitken, A; Okamura, W; Kaneshiro, E
      Highest efficiency, linear X-band performance using InP DHBTs-48% PAE at 30 dB C/IM3

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    2. Archer, JW; Lai, R; Grundbacher, R; Barsky, M; Tsai, R; Reid, P
      An indium phosphide MMIC amplifier for 180-205 GHz

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    3. Lai, YH; Yeh, CT; Hwang, JM; Hwang, HL; Chen, CT; Hung, WH
      Sputtering and etching of GaN surfaces

      JOURNAL OF PHYSICAL CHEMISTRY B
    4. Torimoto, T; Kontani, H; Shibutani, Y; Kuwabata, S; Sakata, T; Mori, H; Yoneyama, H
      Characterization of ultrasmall CdS nanoparticles prepared by the size-selective photoetching technique

      JOURNAL OF PHYSICAL CHEMISTRY B
    5. Kobozev, O; Kamshilin, AA; Raita, E; Nazhestkina, N; Jaaskelainen, T
      Fast adaptive interferometer in a GaP crystal using a near-infrared laser diode

      JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
    6. Haubold, S; Haase, M; Kornowski, A; Weller, H
      Strongly luminescent InP/ZnS core-shell nanoparticles

      CHEMPHYSCHEM
    7. Riwotzki, K; Meyssamy, H; Schnablegger, H; Kornowski, A; Haase, M
      Liquid-phase synthesis of colloids and redispersible powders of strongly luminescing LaPO4 : Ce,Tb nanocrystals

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    8. Liu, AM; Duan, CK
      Preparation and Raman scattering study of pore arrays on an InP(100) surface

      PHYSICA E
    9. Razeghi, M; Slivken, S; Tahraoui, A; Matlis, A; Park, YS
      High power 3-12 mu m infrared lasers: recent improvements and future trends

      PHYSICA E
    10. Ohta, H; Urakawa, C; Nakashima, Y; Yoshikawa, J; Koide, T; Kawamoto, T; Fujiwara, Y; Takeda, Y
      Codoping effect of O-2 into Er-doped InP epitaxial layers grown by OMVPE

      PHYSICA E
    11. Oohigashi, M; Motizuki, K
      Electronic state and g-factor of Er3+ ion doped in InP

      PHYSICA E
    12. Koide, T; Isogai, Y; Fujiwara, Y; Takeda, Y
      OMVPE growth and properties of Dy-doped III-V semiconductors

      PHYSICA E
    13. Beaunier, L; Cachet, H; Froment, M
      Epitaxial electrodeposition of lead selenide films on indium phosphide single crystals

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    14. Razeghi, M; Erdtmann, M; Jelen, C; Guastavinos, F; Brown, GJ; Park, YS
      Development of quantum well infrared photodetectors at the Center for Quantum Devices

      INFRARED PHYSICS & TECHNOLOGY
    15. Fossard, F; Julien, FH; Peronne, E; Alexandrou, A; Brault, J; Gendry, M
      Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications

      INFRARED PHYSICS & TECHNOLOGY
    16. Li, B; Xie, Y; Huang, JX; Liu, Y; Qian, YT
      A novel method for the preparation of III-V semiconductors: sonochemical synthesis of InP nanocrystals

      ULTRASONICS SONOCHEMISTRY
    17. Maury, F; Bedel-Pereira, E
      Influence of hydrogen on chemical beam epitaxy of GaAs using triethylgallium and diethylarsine

      JOURNAL DE PHYSIQUE IV
    18. Kosinova, ML; Fainer, NI; Rumyantsev, YM; Terauchi, M; Shibata, K; Satoh, F; Tanaka, M; Kuznetsov, FA
      Structure and composition investigation of RPECVD SiCN and LPCVD BCN films

      JOURNAL DE PHYSIQUE IV
    19. Nunoya, N; Nakamura, M; Morshed, M; Tamura, S; Arai, S
      High-performance 1.55-mu m wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    20. Rennon, S; Bach, L; Reithmaier, JP; Forchel, A
      Complex coupled distributed-feedback and Bragg-reflector lasers for monolithic device integration based on focused-ion-beam technology

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    21. Grover, R; Hryniewicz, JV; King, OS; Van, V
      Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    22. Esser, N; Schmidt, WG; Cobet, C; Fleischer, K; Shkrebtii, AI; Fimland, BO; Richter, W
      Atomic structure and optical anisotropy of III-V(001) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    23. Poole, PJ; McCaffrey, J; Williams, RL; Lefebvre, J; Chithrani, D
      Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    24. Li, HX; Daniels-Race, T; Hasan, MA
      Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    25. Zhuang, QD; Yoon, SF; Zheng, HQ
      Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    26. Maksimov, O; Guo, SP; Fernandez, F; Tamargo, MC; Peiris, FC; Furdyna, JK
      High reflectivity symmetrically strained ZnxCdyMg1-x-ySe-based distributedBragg reflectors for current injection devices

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    27. Kuhl, AG; Ares, R; Streater, RW
      Effect of growth rate on surface morphology of heavily carbon-doped InGaAs

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    28. Im, YH; Hahn, YB; Pearton, SJ
      Level set approach to simulation of feature profile evolution in a high-density plasma-etching system

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    29. Vasco, E; Vazquez, L; Zaldo, C; Coya, C; Kling, A; Soares, JC
      Integration of piezoelectric (Pb, La)TiO3 on (100)InP by using a CeO2 buffer layer

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    30. Jager, ND; Weber, ER; Salmeron, M
      Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    31. Redondo, E; Martil, I; Gonzalez-Diaz, G; Castan, H; Duenas, S
      Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    32. Pulver, D; Wilmsen, CW; Niles, D; Kee, R
      Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    33. Wang, RH; Stintz, A; Varangis, PM; Newell, TC; Li, H; Malloy, KJ; Lester, LF
      Room-temperature operation of InAs quantum-dash lasers on InP (001)

      IEEE PHOTONICS TECHNOLOGY LETTERS
    34. Rabus, DG; Hamacher, M
      MMI-coupled ring resonators in GaInAsP-InP

      IEEE PHOTONICS TECHNOLOGY LETTERS
    35. Wei, J; Lin, W; Thomson, KJ; Forrest, SR
      Gas source molecular beam epitaxy grown InGaAs(P)N-InP long-wavelength (lambda > 1.65 mu m) photodetectors using a solid arsenic source

      IEEE PHOTONICS TECHNOLOGY LETTERS
    36. Hall, E; Nakagawa, S; Almuneau, G; Kim, JK; Coldren, LA
      Selectively etched undercut apertures in AlAsSb-based VCSELs

      IEEE PHOTONICS TECHNOLOGY LETTERS
    37. Rumbles, G; Selmarten, DC; Ellingson, RJ; Blackburn, JL; Yu, PR; Smith, BB; Micic, OI; Nozik, AJ
      Anomalies in the linear absorption, transient absorption, photoluminescence and photoluminescence excitation spectroscopies of colloidal InP quantum dots

      JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY
    38. Ding, RQ; Wang, H; Lau, WF; Cheung, WY; Wong, SP; Waag, NJ; Yu, YM
      The microstructure and optical properties of the nanocomposite films of InP/SiO2

      ACTA PHYSICA SINICA
    39. Neubert, M; Rudolph, P
      Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    40. Takagi, H; Maeda, R; Suga, T
      Room-temperature wafer bonding of Si to LiNbO3, LiTaO3 and Gd3Ga5O12 by Ar-beam surface activation

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    41. Castan, H; Duenas, S; Barbolla, J; Redondo, E; Martil, I; Gonzalez-Diaz, G
      C-V, DLTS and conductance transient characterization of SiNx : H/InP interface improved by N-2 remote plasma cleaning of the InP surface

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    42. Wang, LX; Kong, XJ; Li, YX; Xie, SJ
      The effect of magnetic field on the ground and excited states of the two-dimensional D- centre

      JOURNAL OF PHYSICS-CONDENSED MATTER
    43. Djurisic, AB; Li, EH
      Modeling the optical constants of CuGaSe2 and CuInSe2

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    44. Fraboni, B; Gasparotto, A; Priolo, F; Scamarcio, G
      High Fe2+/3+ trap concentration in heavily compensated implanted InP

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    45. Bonse, J; Wrobel, JM; Kruger, J; Kautek, W
      Ultrashort-pulse laser ablation of indium phosphide in air

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    46. Pulci, O; Ludge, K; Vogt, P; Esser, N; Schmidt, WG; Richter, W; Bechstedt, F
      First-principles study of InP and GaP(001) surfaces

      COMPUTATIONAL MATERIALS SCIENCE
    47. Yamaguchi, M
      Radiation-resistant solar cells for space use

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    48. Bourgoin, JC; de Angelis, N
      Radiation-induced defects in solar cell materials

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    49. Talazac, L; Brunet, J; Battut, V; Blanc, JP; Pauly, A; Germain, JP; Pellier, S; Soulier, C
      Air quality evaluation by monolithic InP-based resistive sensors

      SENSORS AND ACTUATORS B-CHEMICAL
    50. de Rossi, S; Delaye, P; Launay, JC; Roosen, G
      Implementation and comparative evaluation of various architectures of ultrasonic photorefractive sensors

      OPTICAL MATERIALS
    51. Disseix, P; Payen, C; Leymarie, J; Vasson, A; Mollot, F
      Thermally detected optical absorption, reflectance and photo-reflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

      OPTICAL MATERIALS
    52. Christou, A; Dimoulas, A; Cornet, A
      Epitaxial issues and growth morphologies of InAlAs/InGaAs hetero structures on non-(100) InP index substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    53. Boudissa, A; Benamara, Z; Amrani, M; Gruzza, B
      Numerical analysis of forward I-V characteristics of Au/InP interface restructured by antimony

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    54. Zhang, ZC; Huang, BB; Cui, DL
      Growth of AlxGa1-xP on GaAs substrate by metalorganic vapor phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    55. Grabco, D; Palistrant, N; Rusu, E
      Increasing of dislocation mobility by heat treatment of deformed pure and doped InP crystals

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    56. Kim, HS; Sung, YJ; Kim, DW; Kim, T; Dawson, MD; Yeom, GY
      Etch end-point detection of GaN-based devices using optical emission spectroscopy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    57. Fujiwara, Y; Koide, T; Takeda, Y
      Luminescence properties of Er,O-codoped GaP grown by organometallic vapor phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    58. Zdansky, K; Zavadil, J; Prochazkova, O; Gladkov, P
      P-type InP grows by liquid phase epitaxy with rare earths: not intentionalGe acceptor doping

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    59. Prochazkova, O; Zavadil, J; Zdansky, K
      LPE InP layers grown in the presence of rare-earth elements

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    60. Rakovics, V; Balazs, J; Puspoki, S; Frigeri, C
      Influence of LPE growth conditions on the electroluminescence properties of InP/InGaAs(P) infrared emitting diodes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    61. Riesz, F; Dobos, L; Vignali, C; Pelosi, C
      Thermal decomposition of InP surfaces: volatile component loss, morphological changes, and pattern formation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    62. Ihaddadene, M; Koumetz, S; Latry, O; Ketata, K; Ketata, M; Dubois, C
      A model for diffusion of beryllium in InGaAs/InP heterostructures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    63. Gasparotto, A; Fraboni, B; Priolo, F; Enrichi, F; Mazzone, A; Scamarcio, G; Troccoli, M; Mosca, R
      Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    64. Medjdoub, M; Courant, JL; Maher, H; Post, G
      Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    65. Salviati, G; Armani, N; Cova, P; Meneghesso, G; Zanoni, E
      Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP-based HEMTs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    66. Chen, JJ; Du, ML
      Theoretical investigation of the optical spectrum and gyromagnetic g factor for GaAs : Co2+

      PHYSICA B
    67. Causley, RL; Lewis, RA
      Far-infrared spectroscopy of the zinc acceptor in indium phosphide

      PHYSICA B
    68. Albe, V; Lewis, LJ
      Optical properties of InAs/InP ultrathin quantum wells

      PHYSICA B
    69. Suzuki, M; Kobori, H; Ohyama, T
      Quantum magneto-optical oscillation on far-infrared Zeeman spectrum of n-InP

      PHYSICA B
    70. Tsujii, N; Imanaka, Y; Takamasu, T; Kitazawa, H; Kido, G
      Photoluminescence study of CuInS2 : Yb3+ under high magnetic fields

      PHYSICA B
    71. Takamasu, T; Suzuki, H; Imanaka, Y; Kido, G
      High field optical studies on intra-4f-shell photoluminescence in bulk growth Yb doped InP

      PHYSICA B
    72. Vanacken, J
      The KU Leuven pulsed-field facility solid-state physics in high magnetic fields

      PHYSICA B
    73. Amano, T; Koyama, F; Nishiyama, N; Matsutani, A; Iga, K
      Temperature insensitive micromachined GaAlAs/GaAs vertical cavity wavelength filter

      IEICE TRANSACTIONS ON ELECTRONICS
    74. del Alamo, JA; Blanchard, RR; Mertens, SD
      Hydrogen degradation of InPHEMTs and GaAsPHEMTs

      IEICE TRANSACTIONS ON ELECTRONICS
    75. Endoh, A; Yamashita, Y; Higashiwaki, M; Hikosaka, K; Mimura, T; Hiyamizu, S; Matsui, A
      High RF performance of 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs

      IEICE TRANSACTIONS ON ELECTRONICS
    76. Takahashi, H; Yamada, M; Xie, YG; Kasai, S; Hasegawa, H
      Process characterization and optimization for a novel oxide-free insulatedgate structure for InP MISFETs having silicon interface control layer

      IEICE TRANSACTIONS ON ELECTRONICS
    77. Arai, T; Yamagami, S; Okuda, Y; Harada, Y; Miyamoto, Y; Furuya, K
      InP DHBT with 0.5 mu m wide emitter along < 010 > direction toward BM-HBT with narrow emitter

      IEICE TRANSACTIONS ON ELECTRONICS
    78. Amano, T; Koyama, F; Nishiyama, N; Matsutani, A; Iga, K
      Temperature insensitive micromachined GaAlAs/GaAs vertical cavity wavelength filter

      IEICE TRANSACTIONS ON COMMUNICATIONS
    79. Rohner, M; Willen, B; Jackel, H
      Velocity-modulation and transit-time effects in InP/InGaAs HBTs

      IEEE ELECTRON DEVICE LETTERS
    80. Dvorak, MW; Bolognesi, CR; Pitts, OJ; Watkins, SP
      300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V

      IEEE ELECTRON DEVICE LETTERS
    81. Dumka, DC; Hoke, WE; Lemonias, PJ; Cueva, G; Adesida, I
      High performance 0.35 mu m gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates

      IEEE ELECTRON DEVICE LETTERS
    82. Yamashita, Y; Endoh, A; Shinohara, K; Higashiwaki, M; Hikosaka, K; Mimura, T; Hiyamizu, S; Matsui, T
      Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

      IEEE ELECTRON DEVICE LETTERS
    83. Willen, B; Rohner, M; Jackel, H
      Unilateral power gain limitations due to dynamic base widening effects

      IEEE ELECTRON DEVICE LETTERS
    84. Boudrissa, M; Delos, E; Wallaert, X; Theron, D; De Jaeger, JC
      A 0.15-mu m 60-GHz high-power composite channel GaInAs/ZnP HEMT with low gate current

      IEEE ELECTRON DEVICE LETTERS
    85. Shinohara, K; Yamashita, Y; Endoh, A; Hikosaka, K; Matsui, T; Mimura, T; Hiyamizu, S
      Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

      IEEE ELECTRON DEVICE LETTERS
    86. Honma, S; Okamoto, A; Takayama, Y
      Photorefractive duplex two-wave mixing and all-optical deflection switch

      JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
    87. Sheu, FW; Shih, MF
      Photorefractive polymeric solitons supported by orientationally enhanced birefringent and electro-optic effects

      JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
    88. Franz, G
      Damage in III/V semiconductors caused by hard- and soft-etching plasmas

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    89. Wongcharoen, T; Rahman, BMA; Rajarajan, M; Grattan, KTV
      Spot-size conversion using uniform waveguide sections for efficient laser-fiber coupling

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    90. Rahman, BMA; Obayya, SSA; Somasiri, N; Rajarajan, M; Grattan, KTV; El-Mikathi, HA
      Design and characterization of compact single-section passive polarizationrotator

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    91. Hirota, Y; Ishibashi, T; Ito, H
      1.55-mu m wavelength periodic traveling-wave photodetector fabricated using unitraveling-carrier photodiode structures

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    92. Fujihara, A; Miyamoto, H; Yamanoguchi, K; Mizuki, E; Samoto, N
      60GHz coplanar low-noise amplifier fabricated using AlAs/InAs superlattice-inserted InP-based heterojunction FETs

      NEC RESEARCH & DEVELOPMENT
    93. Koo, BH; Makino, H; Chang, JH; Hanada, T; Yao, T
      Structural and optical properties of InAs quantum dots with 1.55 mu m emission grown on (100) InAlAs/InP by using MBE

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    94. Choi, JY; Song, YH; Kim, JH; Choi, SC; Yang, GM
      Wafer fused InGaP/GaN heterostructure

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    95. Yoo, K; Moon, Y; Lee, TW; Yoon, E
      Dielectric-induced interdiffusion of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells by two-step rapid thermal annealing

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    96. Shim, SI; Kim, KT; Kim, KM; Kim, HD; Kim, SE; Park, JH; Woo, DH
      InP/InGaAsP multiple quantum well multimode interference coupler

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    97. Zunger, A
      Pseudopotential theory of semiconductor quantum dots

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    98. Ibanez, J; Cusco, R; Artus, L
      Raman scattering determination of free charge density using a modified hydrodynamical model

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    99. Vanhollebeke, K; D'Hondt, M; Moerman, I; Van Daele, P; Demeester, P
      Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD)

      JOURNAL OF ELECTRONIC MATERIALS
    100. Soderstrom, D; Lourdudoss, S; Dadgar, A; Stenzel, O; Bimberg, D; Schumann, H
      Dopant diffusion and current-voltage studies on epitaxial InP codoped withRu and Fe

      JOURNAL OF ELECTRONIC MATERIALS


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Documento generato il 14/08/20 alle ore 16:28:59