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La ricerca find articoli where soggetti phrase all words 'INN' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 227 riferimenti
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    1. Lai, YH; Yeh, CT; Hwang, JM; Hwang, HL; Chen, CT; Hung, WH
      Sputtering and etching of GaN surfaces

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. Kandalam, AK; Blanco, MA; Pandey, R
      Theoretical study of structural and vibrational properties of Al3N3, Ga3N3, and In3N3

      JOURNAL OF PHYSICAL CHEMISTRY B
    3. Andreeva, AD; O'Reilly, EP
      Theoretical analysis of the electronic structure of truncated-pyramidal GaN/AlN quantum dots

      PHYSICA E
    4. Park, JS; Im, YH; Choi, RJ; Hahn, YB; Choi, CS; Lee, SH; Lee, JK
      Plasma chemistries for dry etching of SrBi2Ta2O9 thin films

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    5. Im, YH; Kang, HG; Han, BS; Hahn, YB
      High density plasma etching of Y-Ba-Cu-O superconductors

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    6. Stepanov, S; Wang, WN; Yavich, BS; Bougrov, V; Rebane, YT; Shreter, YG
      Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    7. Cadoret, R; Trassoudaine, A
      Growth of gallium nitride by HVPE

      JOURNAL OF PHYSICS-CONDENSED MATTER
    8. Koukitu, A; Kumagai, Y
      Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) andmolecular beam epitaxy (MBE)

      JOURNAL OF PHYSICS-CONDENSED MATTER
    9. Rodrigues, SCP; Sipahi, GM; Scolfaro, LMR; Leite, JR
      Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells

      PHYSICA B
    10. Moore, HCF
      Managing menopause after breast cancer: Balancing risks and benefits

      CLEVELAND CLINIC JOURNAL OF MEDICINE
    11. Hahn, YB; Im, YH; Park, JS; Nahm, KS; Lee, YS
      Effect of dry etching conditions on surface morphology and optical properties of GaN films in chlorine-based inductively coupled plasmas

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    12. Im, YH; Park, JS; Choi, CS; Choi, RJ; Hahn, YB; Lee, SH; Lee, JK
      Dry etching of SrBi2Ta2O9 thin films in Cl-2/NF3/O-2/Ar inductively coupled plasmas

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    13. Im, YH; Choi, CS; Hahn, YB
      High density plasma etching of GaN films in Cl-2/Ar discharges with a low-frequency-excited DC bias

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    14. Inushima, T; Vecksin, VV; Ivanov, SV; Davydov, VY; Sakon, T; Motokawa, M
      Anisotropic superconductivity of InN grown by molecular beam epitaxy on sapphire (0001)

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    15. Mora-Ramos, ME
      Polaron effective mass and binding energy in semiconducting InxGa1-xN

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    16. Maden, M; Tras, B; Bas, AL; Elmas, M; Yazar, E; Birdane, FM
      Investigation of biochemical and haematological side-effects of cefquinomein healthy dogs

      VETERINARY QUARTERLY
    17. Bezerra, EF; Souza, AG; Freire, VN; Mendes, J; Lemos, V
      Strong interface localization of phonons in nonabrupt InN/GaN superlattices - art. no. 201306

      PHYSICAL REVIEW B
    18. Guo, QX; Nishio, M; Ogawa, H; Yoshida, A
      Temperature effect on the electronic structure of AlN - art. no. 113105

      PHYSICAL REVIEW B
    19. Limpijumnong, S; Lambrecht, WRL
      Theoretical study of the relative stability of wurtzite and rocksalt phases in MgO and GaN - art. no. 104103

      PHYSICAL REVIEW B
    20. Grosse, F; Neugebauer, J
      Limits and accuracy of valence force field models for InxGa1-xN alloys - art. no. 085207

      PHYSICAL REVIEW B
    21. Aouas, MR; Sekkal, W; Zaoui, A
      Pressure effect on phonon modes in gallium nitride: a molecular dynamics study

      SOLID STATE COMMUNICATIONS
    22. Ozgur, U; Lee, CW; Everitt, HO
      Control of coherent acoustic phonons in semiconductor quantum wells

      PHYSICAL REVIEW LETTERS
    23. Limpijumnong, S; Lambrecht, WRL
      Homogeneous strain deformation path for the wurtzite to rocksalt high-pressure phase transition in GaN

      PHYSICAL REVIEW LETTERS
    24. Dodd, SP; Saunders, GA; Cankurtaran, M; James, B
      Ultrasonic study of the elastic and nonlinear acoustic properties of ceramic aluminum nitride

      JOURNAL OF MATERIALS SCIENCE
    25. Kumagai, Y; Takemoto, K; Hasegawa, T; Koukitu, A; Seki, H
      Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1-xN using GaCl3 and InCl3

      JOURNAL OF CRYSTAL GROWTH
    26. Inushima, T; Mamutin, VV; Vekshin, VA; Ivanov, SV; Sakon, T; Motokawa, M; Ohoya, S
      Physical properties of InN with the band gap energy of 1.1eV

      JOURNAL OF CRYSTAL GROWTH
    27. Aderhold, J; Davydov, VY; Fedler, F; Klausing, H; Mistele, D; Rotter, T; Semchinova, O; Stemmer, J; Graul, J
      InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

      JOURNAL OF CRYSTAL GROWTH
    28. Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS
      Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model

      JOURNAL OF CRYSTAL GROWTH
    29. Kumagai, Y; Takemoto, K; Koukitu, A; Seki, H
      Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3

      JOURNAL OF CRYSTAL GROWTH
    30. Fan, WJ; Yoon, SF
      Electronic band structures of GaInNAs/GaAs compressive strained quantum wells

      JOURNAL OF APPLIED PHYSICS
    31. Chen, CC; Hsueh, TH; Ting, YS; Chi, GC; Chang, CA
      Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well

      JOURNAL OF APPLIED PHYSICS
    32. Chan, MCY; Surya, C; Wai, PKA
      The effects of interdiffusion on the subbands in GaxIn1-xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 mu m operation wavelengths

      JOURNAL OF APPLIED PHYSICS
    33. Thompson, MP; Auner, GW; Zheleva, TS; Jones, KA; Simko, SJ; Hilfiker, JN
      Deposition factors and band gap of zinc-blende AlN

      JOURNAL OF APPLIED PHYSICS
    34. Wang, DF; Feng, SW; Lu, C; Motayed, A; Jah, M; Mohammad, SN; Jones, KA; Salamanca-Riba, L
      Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN

      JOURNAL OF APPLIED PHYSICS
    35. Alexson, D; Bergman, L; Nemanich, RJ; Dutta, M; Stroscio, MA; Parker, CA; Bedair, SM; El-Masry, NA; Adar, F
      Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

      JOURNAL OF APPLIED PHYSICS
    36. Lee, BH; Lee, SD; Kim, SD; Hwang, IS; Park, HC; Park, HM; Rhee, JK
      Recovery of dry-etch damage in gallium-nitride Schottky barrier diodes

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    37. Naik, VM; Weber, WH; Uy, D; Haddad, D; Naik, R; Danylyuk, YV; Lukitsch, MJ; Auner, GW; Rimai, L
      Ultraviolet and visible resonance-enhanced Raman scattering in epitaxial Al1-xInxN thin films

      APPLIED PHYSICS LETTERS
    38. Wright, AF; Leung, K; van Schilfgaarde, M
      Effects of biaxial strain and chemical ordering on the band gap of InGaN

      APPLIED PHYSICS LETTERS
    39. Kuo, YK; Lin, WW; Lin, J
      Band-gap bowing parameter of the InxGa1-xN derived from theoretical simulation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    40. Saito, Y; Teraguchi, N; Suzuki, A; Araki, T; Nanishi, Y
      Growth of high-electron-mobility InN by RF molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    41. Berkowicz, E; Gershoni, D; Bahir, G; Lakin, E; Shilo, D; Zolotoyabko, E; Abare, AC; Denbaars, SP; Coldren, LA
      Measured and calculated radiative lifetime and optical absorption of InxGa1-xN/GaN quantum structures

      PHYSICAL REVIEW B
    42. Simon, J; Langer, R; Barski, A; Pelekanos, NT
      Spontaneous polarization effects in GaN/AlxGa1-xN quantum wells

      PHYSICAL REVIEW B
    43. Lee, JM; Chang, KM; Lee, IH; Park, SJ
      Highly selective dry etching of III nitrides using an inductively coupled Cl-2/Ar/O-2 plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    44. Nikolaev, VI; Shpeizman, VV; Smirnov, BI
      Determination of elastic moduli of GaN epitaxial layers by microindentation technique

      PHYSICS OF THE SOLID STATE
    45. Besson, JM
      Validation of computations by high pressure measurements: Solutions to problems that experiments cannot solve

      HIGH PRESSURE RESEARCH
    46. Im, YH; Park, JS; Hahn, YB; Nahm, KS; Lee, YS; Cho, BC; Lim, KY; Lee, HJ; Pearton, SJ
      Cl-2-based dry etching of GaN films under inductively coupled plasma conditions

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    47. Cho, BC; Im, YH; Park, JS; Jeong, T; Hahn, YB
      Fast dry etching of doped GaN films in Cl-2-based inductively coupled highdensity plasmas

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    48. Mora-Ramos, ME
      Electron-optical-phonon corrections in the conduction band of wurtzite InxGa1-xN

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    49. Grossner, U; Furthmuller, J; Bechstedt, F
      Dielectric and lattice-dynamical properties of III-nitrides

      JOURNAL OF ELECTRONIC MATERIALS
    50. Remashan, K; Chua, SJ; Ramam, A; Prakash, S; Liu, W
      Inductively coupled plasma etching of GaN using BCl3/Cl-2 chemistry and photoluminescence studies of the etched samples

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    51. Mamutin, VV; Shubina, TV; Vekshin, VA; Ratnikov, VV; Toropov, AA; Ivanov, SV; Karlsteen, M; Sodervall, U; Willander, M
      Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties

      APPLIED SURFACE SCIENCE
    52. Takahashi, N; Toda, Y; Nakamura, T
      Preparation of FeN thin films by chemical vapor deposition using a chloride source

      MATERIALS LETTERS
    53. Andreev, AD; O'Reilly, EP
      Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs

      THIN SOLID FILMS
    54. Abu-Jafar, M; Al-Sharif, AI; Qteish, A
      FP-LAPW and pseudopotential calculations of the structural phase transformations of GaN under high-pressure

      SOLID STATE COMMUNICATIONS
    55. Tsuchiya, T; Miki, O; Shimada, K; Ohnishi, M; Wakahara, A; Yoshida, A
      Epitaxial growth of InN films on MgAl2O4 (111) substrates

      JOURNAL OF CRYSTAL GROWTH
    56. Tsuchiya, T; Ohnishi, M; Wakahara, A; Yoshida, A
      Initial stages of InN thin film growth onto MgAl2O4(111) and alpha-Al2O3(00 center dot 1) substrates

      JOURNAL OF CRYSTAL GROWTH
    57. Bhuiyan, AG; Hashimoto, A; Yamamoto, A; Ishigami, R
      Nitridation effects of GaP(111)B substrate on MOCVD growth of InN

      JOURNAL OF CRYSTAL GROWTH
    58. Kim, J; Byun, D; Kim, JS; Kum, DW
      Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge

      JOURNAL OF CRYSTAL GROWTH
    59. Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS
      Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model

      JOURNAL OF APPLIED PHYSICS
    60. Lee, JM; Chang, KM; Kim, SW; Huh, C; Lee, IH; Park, SJ
      Dry etch damage in n-type GaN and its recovery by treatment with an N-2 plasma

      JOURNAL OF APPLIED PHYSICS
    61. Saxler, A; Debray, P; Perrin, R; Elhamri, S; Mitchel, WC; Elsass, CR; Smorchkova, IP; Heying, B; Haus, E; Fini, P; Ibbetson, JP; Keller, S; Petroff, PM; DenBaars, SP; Mishra, UK; Speck, JS
      Characterization of an AlGaN/GaN two-dimensional electron gas structure

      JOURNAL OF APPLIED PHYSICS
    62. Lee, JM; Chang, KM; Lee, IH; Park, SJ
      Cl-2-based dry etching of GaN and InGaN using inductively coupled plasma -The effects of gas additives

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    63. Kim, HK; Jang, JS; Park, SJ; Seong, TY
      Electrical and structural properties of W ohmic contacts to InGaN

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    64. Cho, BC; Im, YH; Hahn, YB; Nahm, KS; Lee, YS; Pearton, SJ
      Inductively coupled plasma etching of doped GaN films with Cl-2/Ar discharges

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    65. Erol, M
      Energy relaxation by hot carriers in wurtzite GaN epilayers

      CZECHOSLOVAK JOURNAL OF PHYSICS
    66. Chen, CC; Chuang, HW; Chi, GC; Chuo, CC; Chyi, JI
      Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

      APPLIED PHYSICS LETTERS
    67. Yang, HC; Kuo, PF; Lin, TY; Chen, YF; Chen, KH; Chen, LC; Chyi, JI
      Mechanism of luminescence in InGaN/GaN multiple quantum wells

      APPLIED PHYSICS LETTERS
    68. Adelmann, C; Simon, J; Feuillet, G; Pelekanos, NT; Daudin, B; Fishman, G
      Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

      APPLIED PHYSICS LETTERS
    69. Hogg, RA; Norman, CE; Shields, AJ; Pepper, M; Iizuka, N
      Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures

      APPLIED PHYSICS LETTERS
    70. Guo, QX; Matsuse, M; Nishio, M; Ogawa, H
      Reactive ion etching of indium nitride using CH4 and H-2 gases

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    71. Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS
      Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. Karouta, F; Jacobs, B; Vreugdewater, P; van Melick, NGH; Schoen, O; Protzmann, H; Heuken, M
      High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    73. Khan, FA; Zhou, L; Ping, AT; Adesida, I
      Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    74. Cao, XA; Zhang, AP; Dang, GT; Cho, H; Ren, F; Pearton, SJ; Shul, RJ; Zhang, L; Hickman, R; Van Hove, JM
      Inductively coupled plasma damage in GaN Schottky diodes

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    75. Sobolev, VV; Zlobina, MA
      Optical spectra and electronic structure of indium nitride

      SEMICONDUCTORS
    76. Chisholm, JA; Bristowe, PD
      A first principles investigation of stacking fault energies and bonding inwurtzite materials

      JOURNAL OF PHYSICS-CONDENSED MATTER
    77. Kapinos, LE; Song, B; Sigel, H
      Acid-base and metal-ion-coordinating properties of benzimidazole and derivatives (=1,3-dideazapurines) in aqueous solution: Interrelation between complex stability and ligand basicity

      CHEMISTRY-A EUROPEAN JOURNAL
    78. Kopp, MR; Krauter, T; Dashti-Mommertz, A; Neumuller, B
      Organogallium amides: Synthesis and crystal structures of [(Pr2GaN)-Pr-i(H)Bu-t](2) and [Mes(Cl)GaN(H)Bu-t](2)

      ZEITSCHRIFT FUR NATURFORSCHUNG SECTION B-A JOURNAL OF CHEMICAL SCIENCES
    79. Zeitouny, A; Eizenberg, M; Pearton, SJ; Ren, F
      W and W/WSi/In1-xAlxN ohmic contacts to n-type GaN

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    80. Northrup, JE
      Structure of the {11(2)under-bar-0} inversion domain boundary in GaN

      PHYSICA B
    81. Bockowski, M
      High pressure direct synthesis of III-V nitrides

      PHYSICA B
    82. Dyck, JS; Kash, K; Hayman, CC; Argoitia, A; Grossner, MT; Angus, JC; Zhou, WL
      Synthesis of bulk polycrystalline indium nitride at subatmospheric pressures

      JOURNAL OF MATERIALS RESEARCH
    83. Lee, BC
      Tight-binding calculation for the electronic structure of the wurtzite quaternary alloy AlxInyGa1-x-y-N

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    84. Park, SH
      Many-body optical gain with piezoelectric effects of wurtzite and zinc-blende GaN AlGaN quantum well lasers

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    85. Dugdale, DJ; Brand, S; Abram, RA; Pugh, SK
      Determination of band structure parameters in nitride alloys for use in quantum well calculations

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    86. Steube, M; Reimann, K; Brandt, O; Yang, H; Ploog, KH
      High pressure luminescence of zincblende and wurtzite GaN

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    87. Eddy, CR; Molnar, B
      Plasma etch-induced conduction changes in gallium nitride

      JOURNAL OF ELECTRONIC MATERIALS
    88. Thompson, MP; Auner, GW; Drews, AR
      Epitaxial growth of zinc-blende AlN on Si(100) substrates by plasma sourcemolecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    89. Bazhenov, AV; Gorbunov, AV; Negrii, VD; Muller, J; Lipinski, M; Forchel, A
      Optical properties of thin films and quantum wells of InxGa1-xN/GaN and their dependence on laser irradiation

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    90. Pugh, SK; Dugdale, DJ; Brand, S; Abram, RA
      Electronic structure calculations on nitride semiconductors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    91. Kwon, CH
      Metabolism-based anticancer drug design

      ARCHIVES OF PHARMACAL RESEARCH
    92. Kopp, MR; Neumuller, B
      Synthesis and crystal structure of [(PhCH2)(2)GaF((BuNH2)-Bu-t)]center dot2THF

      ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
    93. Dashti-Mommertz, A; Neumuller, B
      Gallium and indium arsanido metalates: Compounds derived front the zinc blende and wurtzite structure

      ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
    94. Grabowy, T; Merzweiler, K
      New organometallic indium nitrogen compounds. Synthesis and crystal structures of [{Cp (CO)(3)Mo}(2)InN(SiMe3)(2)] and [{Cp (CO)(3)Mo}In{N(SiMe3)(2)}(2)]

      ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
    95. Cao, XA; LaRoche, JR; Ren, F; Pearton, SJ; Lothian, JR; Singh, RK; Wilson, RG; Guo, HJ; Pennycook, SJ
      Implanted p-n junctions in GaN

      SOLID-STATE ELECTRONICS
    96. Lima, AP; Tabata, A; Leite, JR; Kaiser, S; Schikora, D; Schottker, B; Frey, T; As, DJ; Lischka, K
      Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    97. Pugh, SK; Dugdale, DJ; Brand, S; Abram, RA
      Band-gap and k.p. parameters for GaAlN and GaInN alloys

      JOURNAL OF APPLIED PHYSICS
    98. Ambacher, O; Smart, J; Shealy, JR; Weimann, NG; Chu, K; Murphy, M; Schaff, WJ; Eastman, LF; Dimitrov, R; Wittmer, L; Stutzmann, M; Rieger, W; Hilsenbeck, J
      Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

      JOURNAL OF APPLIED PHYSICS
    99. Shan, W; Ager, JW; Yu, KM; Walukiewicz, W; Haller, EE; Martin, MC; McKinney, WR; Yang, W
      Dependence of the fundamental band gap of AlxGa1-xN on alloy composition and pressure

      JOURNAL OF APPLIED PHYSICS
    100. Manz, C; Kunzer, M; Obloh, H; Ramakrishnan, A; Kaufmann, U
      InxGa1-xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1-xN

      APPLIED PHYSICS LETTERS


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Documento generato il 05/08/20 alle ore 13:30:11