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    1. Aoyagi, Y; Tanaka, S; Hirayama, H; Takeuchi, M
      Quantum dot formation and crystal growth using an atomic nano-mask

      PHYSICA E
    2. Kneissl, M; Wong, WS; Treat, DW; Teepe, M; Miyashita, N; Johnson, NM
      Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    3. Kudryashov, VE; Mamakin, SS; Turkin, AN; Yunovich, AE; Kovalev, AN; Manyakhin, FI
      Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence

      SEMICONDUCTORS
    4. Sheu, JK; Chi, GC; Jou, MJ
      Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer

      IEEE PHOTONICS TECHNOLOGY LETTERS
    5. Taliercio, T; Lefebvre, P; Gallart, M; Morel, A
      Optical properties of group-III nitride quantum wells and quantum boxes

      JOURNAL OF PHYSICS-CONDENSED MATTER
    6. Iliopoulos, E; Ludwig, KF; Moustakas, TD; Komninou, P; Karakostas, T; Nouet, G; Chu, SNG
      Epitaxial growth and self-organized superlattice structures in AlGaN filmsgrown by plasma assisted molecular beam epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    7. Schenk, HPD; Leroux, M; de Mierry, P; Laugt, M; Omnes, F; Gibart, P
      Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    8. Kawakami, Y; Narukawa, Y; Omae, K; Nakamura, S; Fujita, S
      Pump and probe spectroscopy of InGaN multi quantum well based laser diodes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    9. Reverchon, JL; Huet, F; Poisson, MA; Duboz, JY; Damilano, B; Grandjean, N; Massies, J
      Photoconductance measurements and Stokes shift in InGaN alloys

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    10. Damilano, B; Grandjean, N; Massies, J
      InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    11. Lancefield, D; Crawford, A; Beaumont, B; Gibart, P; Heuken, M; Di Forte-Poisson, M
      Temperature dependent electroluminescence in GaN and IaGaN/GaN LEDs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    12. Cremades, A; Piqueras, J; Albrecht, M; Stutzmann, M; Strunk, HP
      Study of structural defects limiting the luminescence of InGaN single quantum wells

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    13. Yablonskii, GP; Lutsenko, EV; Pavlovskii, VN; Marko, IP; Schineller, B; Heuken, M; Heime, K
      Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum wellheterostructures under optical and electron-beam excitation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    14. Bajaj, KK
      Use of excitons in materials characterization of semiconductor systems

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    15. Rodrigues, SCP; Sipahi, GM; Scolfaro, LMR; Leite, JR
      Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells

      PHYSICA B
    16. Sheu, JK; Chi, GC; Jou, MJ
      Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice

      IEEE ELECTRON DEVICE LETTERS
    17. Hsin, YM; Hsu, HT; Chuo, CC; Chyi, JI
      Device characteristics of the GaN/InGaN-doped channel HFETs

      IEEE ELECTRON DEVICE LETTERS
    18. Sheu, JK; Tsai, JM; Shei, SC; Lai, WC; Wen, TC; Kou, CH; Su, YK; Chang, SJ; Chi, GC
      Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer

      IEEE ELECTRON DEVICE LETTERS
    19. Miyajima, T; Kudo, Y; Liu, KY; Uruga, T; Asatsuma, T; Hino, T; Kobayashi, T
      Local structure analysis of Ga1-xInxN alloy using extended X-ray absorption fine structure measurements

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    20. Lefebvre, P; Taliercio, T; Kalliakos, S; Morel, A; Zhang, XB; Gallart, M; Bretagnon, T; Gil, B; Grandjean, N; Damilano, B; Massies, J
      Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined Stark effect

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    21. Mora-Ramos, ME
      Polaron effective mass and binding energy in semiconducting InxGa1-xN

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    22. Liliental-Weber, Z; Benamara, M; Washburn, J; Domagala, JZ; Bak-Misiuk, J; Piner, EL; Roberts, JC; Bedair, SM
      Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

      JOURNAL OF ELECTRONIC MATERIALS
    23. Kim, DJ; Moon, YT; Song, KM; Lee, IW; Park, SJ
      Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

      JOURNAL OF ELECTRONIC MATERIALS
    24. Zielinska-Rohozinska, E; Gronkowski, J; Regulska, M; Majer, M; Pakula, K
      X-ray diffraction study of composition inhomogeneities in Ga1-xInxN thin layers

      CRYSTAL RESEARCH AND TECHNOLOGY
    25. Kim, HM; Kang, TW
      Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD

      MATERIALS LETTERS
    26. Choi, CK; Little, BD; Kwon, YH; Lam, JB; Song, JJ; Chang, YC; Keller, S; Mishra, UK; DenBaars, SP
      Femtosecond pump-probe spectroscopy and time-resolved photoluminescence ofan InxGa1-xN/GaN double heterostructure - art. no. 195302

      PHYSICAL REVIEW B
    27. Grosse, F; Neugebauer, J
      Limits and accuracy of valence force field models for InxGa1-xN alloys - art. no. 085207

      PHYSICAL REVIEW B
    28. Sun, CK; Chu, SW; Tai, SP; Keller, S; Abare, A; Mishra, UK; DenBaars, SP
      Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy

      SCANNING
    29. Kawakami, Y; Omae, K; Kaneta, A; Okamoto, K; Izumi, T; Saijou, S; Inoue, K; Narukawa, Y; Mukai, T; Fujita, S
      Radiative and nonradiative recombination processes in GaN-based semiconductors

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    30. Strassburg, M; Hoffmann, A; Krestnikov, IL; Ledentsov, NN
      Optical and structural properties of quantum dots in wide-bandgap semiconductors

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    31. Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS
      Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model

      JOURNAL OF CRYSTAL GROWTH
    32. Guo, X; Schubert, EF
      Current crowding in GaN/InGaN light emitting diodes on insulating substrates

      JOURNAL OF APPLIED PHYSICS
    33. Takayama, T; Yuri, M; Itoh, K; Harris, JS
      Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model

      JOURNAL OF APPLIED PHYSICS
    34. Storm, DF
      Incorporation kinetics of indium and gallium in indium gallium nitride: A phenomenological model

      JOURNAL OF APPLIED PHYSICS
    35. Ryu, MY; Yu, PW; Shin, EJ; Lee, JI; Yu, SK; Oh, E; Nam, OH; Sone, CS; Park, YJ
      Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells

      JOURNAL OF APPLIED PHYSICS
    36. Alexson, D; Bergman, L; Nemanich, RJ; Dutta, M; Stroscio, MA; Parker, CA; Bedair, SM; El-Masry, NA; Adar, F
      Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

      JOURNAL OF APPLIED PHYSICS
    37. Anwar, AFM; Wu, SL; Webster, RT
      Temperature dependent transport properties in GaN, A1(x)Ga(1-x)N, and InxGa1-xN semiconductors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    38. Andreev, AD; O'Reilly, EP
      Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots

      APPLIED PHYSICS LETTERS
    39. Chichibu, SF; Azuhata, T; Sota, T; Mukai, T
      Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

      APPLIED PHYSICS LETTERS
    40. Chichibu, SF; Sugiyama, M; Kuroda, T; Tackeuchi, A; Kitamura, T; Nakanishi, H; Sota, T; DenBaars, SP; Nakamura, S; Ishida, Y; Okumura, H
      Band gap bowing and exciton localization in strained cubic InxGa1-xN filmsgrown on 3C-SiC (001) by rf molecular-beam epitaxy

      APPLIED PHYSICS LETTERS
    41. Storm, DF; Adelmann, C; Daudin, B
      Incorporation kinetics of indium in indium gallium nitride at low temperature

      APPLIED PHYSICS LETTERS
    42. Shatalov, M; Chitnis, A; Adivarahan, V; Lunev, A; Zhang, J; Yang, JW; Fareed, Q; Simin, G; Zakheim, A; Khan, MA; Gaska, R; Shur, MS
      Band-edge luminescence in quaternary AllnGaN light-emitting diodes

      APPLIED PHYSICS LETTERS
    43. Sun, CK; Liang, JC; Yu, XY; Keller, S; Mishra, UK; DenBaars, SP
      Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states

      APPLIED PHYSICS LETTERS
    44. Miller, EJ; Yu, ET
      Influence of the dipole interaction energy on clustering in InxGa1-xN alloys

      APPLIED PHYSICS LETTERS
    45. Pereira, S; Correia, MR; Monteiro, T; Pereira, E; Alves, E; Sequeira, AD; Franco, N
      Compositional dependence of the strain-free optical band gap in InxGa1-xN layers

      APPLIED PHYSICS LETTERS
    46. Pinault, MA; Tournie, E
      On the origin of carrier localization in Ga1-xInxNyAs1-y/GaAs quantum wells

      APPLIED PHYSICS LETTERS
    47. Markowitz, PD; Zach, MP; Gibbons, PC; Penner, RM; Buhro, WE
      Phase separation in AlxGa1-xAs nanowhiskers grown by the solution-liquid-solid mechanism

      JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
    48. Wen, TC; Lee, WI
      Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    49. Bai, J; Wang, T; Sakai, S
      Photoluminescence study on InGaN/GaN quantum well structure grown on (11(2)over-bar-0) sapphire substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    50. Nagahama, S; Yanamoto, T; Sano, M; Mukai, T
      Wavelength dependence of InGaN laser diode characteristics

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    51. Kim, DJ; Moon, YT; Song, KM; Park, SJ
      Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    52. Kuo, YK; Lin, WW; Lin, J
      Band-gap bowing parameter of the InxGa1-xN derived from theoretical simulation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    53. Inaba, Y; Onozu, T; Takami, S; Kubo, M; Miyamoto, A; Imamura, A
      Computational chemistry study on crystal growth of InGaN/GaN

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. Sugiura, T; Kawaguchi, Y; Tsukamoto, T; Andoh, H; Yamaguchi, M; Hiramatsu, K; Sawaki, N
      Raman scattering study of InGaN grown by metalorganic vapor phase epitaxy on (0001) sapphire substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    55. Kaneta, A; Izumi, T; Okamoto, K; Kawakami, Y; Fujita, S; Narita, Y; Inoue, T; Mukai, T
      Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    56. Damilano, B; Grandjean, N; Pernot, C; Massies, J
      Monolithic white light emitting diodes based on InGaN/GaN multiple-quantumwells

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    57. Takeuchi, T; Hasnain, G; Corzine, S; Hueschen, M; Schneider, RP; Kocot, C; Blomqvist, M; Chang, YL; Lefforge, D; Krames, MR; Cook, LW; Stockman, SA
      GaN-based light emitting diodes with tunnel junctions

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    58. Feltin, E; Dalmasso, S; de Mierry, P; Beaumont, B; Lahreche, H; Bouille, A; Haas, H; Leroux, M; Gibart, P
      Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    59. Tadatomo, K; Okagawa, H; Ohuchi, Y; Tsunekawa, T; Imada, Y; Kato, M; Taguchi, T
      High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    60. Yamaguchi, AA; Kuramoto, M; Kimura, A; Nido, M; Mizuta, M
      Alloy semiconductor system with tailorable band-tail: A band-state model and its verification using laser characteristics of InGaN material system

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    61. Takahashi, K; Okada, Y; Kawabe, M
      Fabrication of InGaN multiple quantum wells grown by hydrogen flux modulation in RF molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    62. Leem, SJ; Kim, MH; Shin, J; Choi, Y; Jeong, J
      The effects of in flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    63. Simin, G; Hu, XH; Tarakji, A; Zhang, JP; Koudymov, A; Saygi, S; Yang, JW; Khan, A; Shur, MS; Gaska, R
      AlGaN/InGaN/GaN double heterostructure field-effect transistor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    64. Sakai, S
      Homoepitaxial and heteroepitaxial growth of InGaN/GaN

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    65. Hanser, AD; Banks, AD; Davis, RF; Jahnen, B; Albrecht, M; Dorsch, W; Christiansen, S; Strunk, HP
      Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    66. Cho, YH; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP
      Linear and nonlinear optical properties of InxGa1-xN/GaN heterostructures

      PHYSICAL REVIEW B
    67. O'Steen, ML; Fedler, F; Hauenstein, RJ
      A study of the effect of V/III flux ratio and substrate temperature on theIn incorporation efficiency in InxGa1-x/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    68. Fernandez, JRL; Chitta, VA; Abramof, E; da Silva, AF; Leite, JR; Tabata, A; As, DJ; Frey, T; Schikora, D; Lischka, K
      Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    69. Han, J; Figiel, JJ; Petersen, GA; Myers, SM; Crawford, MH; Banas, MA; Hearne, SJ
      MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    70. Cho, YH; Gainer, GH; Lam, JB; Song, JJ; Yang, W; Jhe, W
      Dynamics of anomalous temperature-induced emission shift in MOCVD-grown (Al, In)GaN thin films

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    71. Tachibana, K; Someya, T; Arakawa, Y
      Growth of InGaN self-assembled quantum dots and their application to lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    72. Chen, HJ; Feenstra, RM; Northrup, JE; Zywietz, T; Neugebauer, J; Greve, DW
      Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    73. Soshnikov, IP; Lundin, VV; Usikov, AS; Kalmykova, IP; Ledentsov, NN; Rosenauer, A; Neubauer, B; Gerthsen, D
      Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix

      SEMICONDUCTORS
    74. Xu, ZY; Liu, BL; Li, SF; Yang, H; Ge, WK
      Steady and transient optical properties of cubic InGaN epilayers

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    75. Tomar, MS; Rutherford, R; New, C; Kuenhold, KA
      Growth of InGaN and GaN films by photoassisted metalorganic chemical vapordeposition

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    76. Brillson, LJ; Young, AP; Levin, TM; Jessen, GH; Schafer, J; Yang, Y; Xu, SH; Cruguel, H; Lapeyre, GJ; Ponce, FA; Naoi, Y; Tu, C; McKenzie, JD; Abernathy, CR
      Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    77. Wu, MF; Yao, SD; Vantomme, A; Hogg, S; Langouche, G; Van der Stricht, W; Jacobs, K; Moerman, I; Li, J; Zhang, GY
      Elastic strain in InGaN and AlGaN layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    78. Nakamura, S
      UV/blue/green InGaN-based LEDs and laser diodes grown on epitaxially laterally overgrown GaN

      IEICE TRANSACTIONS ON ELECTRONICS
    79. Kuramata, A; Kubota, S; Soejima, R; Domen, K; Horino, K; Hacke, P; Tanahashi, T
      Continuous wave operation of InGaN laser diodes fabricated on SiC substrates

      IEICE TRANSACTIONS ON ELECTRONICS
    80. Kuramoto, M; Yamaguchi, AA; Usui, A; Mizuta, M
      InGaN MQW laser diodes grown on an n-GaN substrate with a backside n-contact

      IEICE TRANSACTIONS ON ELECTRONICS
    81. Abare, AC; Denbaars, SP; Coldren, LA
      Distributed feedback laser diodes employing embedded dielectric gratings located above the active region

      IEICE TRANSACTIONS ON ELECTRONICS
    82. Arakawa, Y; Someya, T; Tachibana, K
      Progress in GaN-based nanostructures for blue light emitting quantum dot lasers and vertical cavity surface emitting lasers

      IEICE TRANSACTIONS ON ELECTRONICS
    83. Perlin, P; Suski, T; Skierbiszewski, C; Wisniewski, P
      Pressure studies of band structure, defects and impurities in group III nitrides

      HIGH PRESSURE RESEARCH
    84. Kuramoto, M; Yamaguchi, AA; Usui, A; Sasaoka, C; Hisanaga, Y; Kimura, A; Sunakawa, H; Kuroda, N; Nido, M; Mizuta, M
      Towards a durable InGaN MQW LD - Room temperature CW operation of InGaN MQW laser

      NEC RESEARCH & DEVELOPMENT
    85. Fang, ZQ; Reynolds, DC; Look, DC
      Changes in electrical characteristics associated with degradation of InGaNblue light-emitting diodes

      JOURNAL OF ELECTRONIC MATERIALS
    86. Eliseev, PG; Osinski, M; Lee, JY; Sugahara, T; Sakai, S
      Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire

      JOURNAL OF ELECTRONIC MATERIALS
    87. Zhang, X; Dapkus, PD; Rich, DH; Kim, I; Kobayashi, JT; Kobayashi, NP
      InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

      JOURNAL OF ELECTRONIC MATERIALS
    88. Wetzel, C; Takeuchi, T; Amano, H; Akasaki, I
      Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells

      PHYSICAL REVIEW B
    89. Satake, A; Masumoto, Y; Miyajima, T; Asatsuma, T; Hino, T
      Ultraviolet anti-Stokes photoluminescence in InxGa1-xN/GaN quantum-well structures

      PHYSICAL REVIEW B
    90. Dalmasso, S; Damilano, B; Grandjean, N; Massies, J; Leroux, M; Reverchon, JL; Duboz, JY
      MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization

      THIN SOLID FILMS
    91. Andreev, AD; O'Reilly, EP
      Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs

      THIN SOLID FILMS
    92. Siozade, L; Leymarie, J; Disseix, P; Vasson, A; Mihailovic, M; Grandjean, N; Leroux, M; Massies, J
      Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures

      SOLID STATE COMMUNICATIONS
    93. Lee, MH; Kim, KJ; Oh, E
      Ellipsometric investigation of optical constant and band gap of Ga1-xInxN/GaN (x <= 0.12) heterostructures

      SOLID STATE COMMUNICATIONS
    94. Oh, E; Park, H; Sone, C; Nam, O; Park, Y; Kim, T
      Micro-photoluminescence study of InxGa1-xN/GaN quantum wells

      SOLID STATE COMMUNICATIONS
    95. Frayssinet, E; Prystawko, P; Leszczynski, M; Domagala, J; Knap, W; Robert, JL
      Microwave plasma etching of GaN in nitrogen atmosphere

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    96. Sugihara, D; Kikuchi, A; Kusakabe, K; Nakamura, S; Toyoura, Y; Yamada, T; Kishino, K
      Suppression of inversion domains and decrease of threading dislocations inmigration enhanced epitaxial GaN by RF-molecular beam epitaxy

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    97. Mizuta, M
      CW operation of (In,Ga)N MQW laser diodes on FIELO-GaN substrates

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    98. Scholz, F; Off, J; Fehrenbacher, E; Gfrorer, O; Brockt, G
      Investigations on structural properties of GaInN-GaN multi quantum well structures

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    99. Hangleiter, A
      Optical properties and polarization fields in the nitrides

      JOURNAL OF LUMINESCENCE
    100. Kneissl, M; Van de Walle, CG; Bour, DP; Romano, LT; Goddard, LL; Master, CP; Northrup, JE; Johnson, NM
      Performance and optical gain characteristic of InGaN MQW laser diodes

      JOURNAL OF LUMINESCENCE


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Documento generato il 05/08/20 alle ore 13:17:37