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La ricerca find articoli where soggetti phrase all words 'INDIUM-PHOSPHIDE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 491 riferimenti
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    1. Beaunier, L; Cachet, H; Froment, M
      Epitaxial electrodeposition of lead selenide films on indium phosphide single crystals

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    2. Li, B; Xie, Y; Huang, JX; Liu, Y; Qian, YT
      A novel method for the preparation of III-V semiconductors: sonochemical synthesis of InP nanocrystals

      ULTRASONICS SONOCHEMISTRY
    3. Gottschling, BC; Maronpot, RR; Hailey, JR; Peddada, S; Moomaw, CR; Klaunig, JE; Nyska, A
      The role of oxidative stress in indium phosphide-induced lung carcinogenesis in rats

      TOXICOLOGICAL SCIENCES
    4. Zdansky, K; Zavadil, J; Prochazkova, O; Gladkov, P
      P-type InP grows by liquid phase epitaxy with rare earths: not intentionalGe acceptor doping

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    5. Prochazkova, O; Zavadil, J; Zdansky, K
      LPE InP layers grown in the presence of rare-earth elements

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    6. Causley, RL; Lewis, RA
      Far-infrared spectroscopy of the zinc acceptor in indium phosphide

      PHYSICA B
    7. Suzuki, H; Imanaka, Y; Takamasu, T; Kitazawa, H; Kido, G
      Photoluminescence under high magnetic field and the magnetic susceptibility for bulk growth Yb doped InP

      PHYSICA B
    8. Suemitsu, T; Ishii, T; Ishii, Y
      Gate and recess engineering for ultrahigh-speed InP-based HEMTs

      IEICE TRANSACTIONS ON ELECTRONICS
    9. McKinnon, WR; Driad, R; Storey, C; Renaud, A; McAlister, SP; Garanzotis, T; Springthorpe, AJ
      Emitter interface in InP-based HBTs with InAlAs/InP composite emitters

      IEICE TRANSACTIONS ON ELECTRONICS
    10. Comizzoli, RB; Osenbach, JW; Crane, GR; Peins, GA; Siconolfi, DJ; Lorimor, OG; Chang, CC
      Failure mechanism of avalanche photodiodes in the presence of water vapor

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    11. Vanhollebeke, K; D'Hondt, M; Moerman, I; Van Daele, P; Demeester, P
      Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD)

      JOURNAL OF ELECTRONIC MATERIALS
    12. Hannappel, T; Toben, L; Moller, K; Willig, F
      In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K

      JOURNAL OF ELECTRONIC MATERIALS
    13. Prochazkova, O; Zavadil, J; Zdansky, K
      Role of f-elements in the growth of InP layers for radiation detectors

      CRYSTAL RESEARCH AND TECHNOLOGY
    14. Gerard, I; Simon, N; Etcheberry, A
      Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysis

      APPLIED SURFACE SCIENCE
    15. Sumathi, RR; Giridharan, NV; Jayavel, R; Kumar, J
      BaTiO3 as an insulating layer for InP-based metal-insulator-semiconductor structures

      MATERIALS LETTERS
    16. Newman, RC; Davidson, BR; Wagner, J; Sangster, MJL; Leigh, RS
      Thermal stability of semi-insulating InP epilayers: The roles of dicarbon and carbon-hydrogen centers - art. no. 205307

      PHYSICAL REVIEW B
    17. Ould-Metidji, Y; Bideux, L; Matolin, V; Gruzza, B; Robert, C
      Nitridation of InP(100) surface studied by AES and EELS spectroscopies

      VACUUM
    18. Yuan, K; Radhakrishnan, K; Zheng, HQ; Zhuang, QD; Ing, GI
      Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

      THIN SOLID FILMS
    19. Toben, L; Hannappel, T; Moller, K; Crawack, HJ; Pettenkofer, C; Willig, F
      RDS, LEED and STM of the P-rich and Ga-rich surfaces of GaP(100)

      SURFACE SCIENCE
    20. Etcheberry, A; Cachet, H; Cortes, R; Froment, M
      Electrodeposition of CdSe on GaAs and InP substrates

      SURFACE SCIENCE
    21. de Kort, R; Kets, W; van Kempen, H
      A low-temperature scanning tunneling microscopy study on the Sn- and Zn-doped InP(110) surfaces

      SURFACE SCIENCE
    22. Preobrajenski, AB; Gebhardt, RK; Uhlig, I; Chasse, T
      Two types of sulfur-induced (2 x 1) reconstructions on InP(001)

      SURFACE SCIENCE
    23. Kalan, RJ; Maniatty, AM
      Micromechanical based constitutive relations for modeling the bulk growth of single crystal InP

      JOURNAL OF CRYSTAL GROWTH
    24. Lee, RT; Fetzer, CM; Jun, SW; Chapman, DC; Shurtleff, JK; Stringfellow, GB; Ok, YW; Seong, TY
      Enhancement of compositional modulation in GaInP epilayers by the additionof surfactants during organometallic vapor phase epitaxy growth

      JOURNAL OF CRYSTAL GROWTH
    25. Keiper, D
      Effect of the carrier gas and the group-V precursor on the doping efficiency of SiH4 for InP and In0.54Ga0.46As/InP in LP-MOVPE

      JOURNAL OF CRYSTAL GROWTH
    26. Keiper, D; Westphalen, R
      Effect of the carrier gas and the group-V precursor on the DEZn doping efficiency for InP and In0.54Ga0.46As in LP-MOVPE

      JOURNAL OF CRYSTAL GROWTH
    27. Vanhollebeke, K; D'Hondt, M; Moerman, I; Van Daele, P; Demeester, P
      MOVPE based Zn diffusion into InP and InAsP/InP hetero structures

      JOURNAL OF CRYSTAL GROWTH
    28. Shimizu, A; Nishizawa, J; Oyama, Y; Suto, K
      InP single crystal growth by the horizontal Bridgman method under controlled phosphorus vapor pressure

      JOURNAL OF CRYSTAL GROWTH
    29. Xiang, N; Tukiainen, A; Dekker, J; Likonen, J; Pessa, M
      Oxygen-related deep level defects in solid-source MBE grown GaInP

      JOURNAL OF CRYSTAL GROWTH
    30. Wallart, X; Deresmes, D; Mollot, F
      Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

      JOURNAL OF CRYSTAL GROWTH
    31. Ratanathammaphan, S; Thainoi, S; Changmoang, P; Sopitpan, S; Antarasena, C
      Molecular beam epitaxy growth of InP layers on GaAs substrates using GaP decomposition source

      JOURNAL OF CRYSTAL GROWTH
    32. Mayer, B; Reithmaier, JP; Forchel, A
      Tertiarybutylarsine (TBAs) and -phosphine (TBP) as group V-precursors for gas source molecular beam epitaxy for optoelectronic applications

      JOURNAL OF CRYSTAL GROWTH
    33. Takizawa, M; Nomura, I; Che, SB; Kikuchi, A; Shimomura, K; Kishino, K
      MBE growth of BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice and quantum well structures on InP substrates

      JOURNAL OF CRYSTAL GROWTH
    34. Amanai, H; Nagao, S; Sakaki, H
      InAs/GaInP self-assembled quantum dots: molecular beam epitaxial growth and optical properties

      JOURNAL OF CRYSTAL GROWTH
    35. Higgins, WM; Iseler, GW; Bliss, DF; Bryant, G; Tassev, V; Jafri, I; Ware, RM; Carlson, DJ
      Improved phosphorus injection synthesis for bulk InP

      JOURNAL OF CRYSTAL GROWTH
    36. Sun, NF; Wu, XW; Wu, X; Zhao, YW; Cao, LX; Zhao, Q; Guo, WL; Zhang, J; Bi, KY; Sun, TN
      Hydrogen neutralization effect in bulk n-type LEC InP materials

      JOURNAL OF CRYSTAL GROWTH
    37. Fu, Q; Begarney, MJ; Li, CH; Law, DC; Hicks, RF
      Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment

      JOURNAL OF CRYSTAL GROWTH
    38. Sun, YT; Messmer, ER; Soderstrom, D; Jahan, D; Lourdudoss, S
      Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction

      JOURNAL OF CRYSTAL GROWTH
    39. Williams, RL; Aers, GC; Poole, PJ; Lefebvre, J; Chithrani, D; Lamontagne, B
      Controlling the self-assembly of InAs/InP quantum dots

      JOURNAL OF CRYSTAL GROWTH
    40. Olsen, GH; Dixon, PE; Lange, MJ; Sudol, JJ; Cohen, MJ; Sugg, AR; Dries, JC
      Photodetector arrays from 100 mm diameter InGaAs/InP epitaxial wafers

      JOURNAL OF CRYSTAL GROWTH
    41. Naritsuka, S; Nishinaga, T
      Interface-supersaturation estimated from the shape of steps on the surfaceof InP MCE by LPE

      JOURNAL OF CRYSTAL GROWTH
    42. Balasubramanian, K; Zhu, XL
      Spectroscopic properties of mixed gallium arsenide tetramers: GaAs3 +/-, GaAs3, Ga3As +/-, and Ga3As

      JOURNAL OF CHEMICAL PHYSICS
    43. Tsujii, N; Imanaka, Y; Takamasu, T; Kitazawa, H; Kido, G
      Photoluminescence of Yb3+-doped CuInS2 crystals in magnetic fields

      JOURNAL OF APPLIED PHYSICS
    44. Mari, B; Hernandez-Fenollosa, MA; Navarro, FJ
      Observation of Fe-related defects in neutron irradiated semi-insulating InP

      JOURNAL OF APPLIED PHYSICS
    45. Djahanshahi, H; Saniei, N; Voinigescu, SP; Maliepaard, MC; Salama, CAT
      A 20-GHz InP-HBT voltage-controlled oscillator with wide frequency tuning range

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    46. Archer, JW; Lai, R; Gough, R
      Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    47. Wang, H; Ng, GI
      Electrical properties and transport mechanisms of InP/InGaAs HBTs operatedat low temperature

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    48. McAlister, SP; McKinnon, WR; Driad, R
      Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    49. Fay, P; Jiang, L; Xu, Y; Bernstein, GH; Chow, DH; Schulman, JN; Dunlap, HL; De Los Santos, HJ
      Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    50. Chung, T; Bank, SR; Epple, J; Hsieh, KC
      Current gain dependence on subcollector and etch-stop doping in InGaP/GaAsHBTs

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    51. Wang, H; Ng, GI
      Investigation of the degradation of InGaAS/InP double HBTs under reverse base-collector bias stress

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    52. Gilbert, BK; Degerstrom, MJ; Zabinski, PJ; Schaefer, TM; Fokken, GJ; Randall, BA; Schwab, DJ; Daniel, ES; Sommerfeldt, SC
      Emerging multigigahertz digital and mixed-signal integrated circuits targeted for military applications: Dependence on advanced electronic packaging to achieve full performance

      PROCEEDINGS OF THE IEEE
    53. Andre, P; Blayac, S; Berdaguer, P; Benchimol, JL; Godin, J; Kauffmann, N; Konczykowska, A; Kasbari, AE; Riet, M
      InGaAs/InP DHBT technology and design methodology for over 40 Gb/s opticalcommunication circuits

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    54. Kauffmann, N; Blayac, S; Abboun, M; Andre, P; Aniel, F; Riet, M; Benchimol, JL; Godin, J; Konczykowska, A
      InPHBT driver circuit optimization for high-speed ETDM transmission

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    55. Lu, J; Xie, Y; Jiang, XX; He, W; Yan, P; Qian, YT
      Potassium borohydride reducing route to phase-pure nanocrystalline InSb atlow temperature

      CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE
    56. Micic, OI; Ahrenkiel, SP; Nozik, AJ
      Synthesis of extremely small InP quantum dots and electronic coupling in their disordered solid films

      APPLIED PHYSICS LETTERS
    57. Koubaiti, S; Levade, C; Vanderschaeve, G; Couderc, JJ
      Vickers indentation on the {001} faces of GaAs under infrared illuminationand in darkness

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    58. Le Bourhis, E; Patriarche, G
      Deformations induced by a Vickers indentor in InP at room temperature

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    59. Feng, PY; Dai, DG; Balasubramanian, K
      Electronic states of Al3As2, Al3As2-, Al3As2+, Al2As3, Al2As3-, and Al2As3+

      JOURNAL OF PHYSICAL CHEMISTRY A
    60. Balasubramanian, K
      Spectroscopic constants for GaAs2-, GaAs2, Ga2As-, and Ga2As

      JOURNAL OF PHYSICAL CHEMISTRY A
    61. Mason, B; Barton, J; Fish, GA; Coldren, LA; DenBaars, SP
      Design of sampled grating DBR lasers with integrated semiconductor opticalamplifiers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    62. Yakubu, H; Thilakan, P
      Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates

      RENEWABLE ENERGY
    63. Chellali, M; Akkal, B; Tizi, S; Benamara, Z; Gruzza, B; Robert, C; Bideux, L
      Effect of InSb layer on the interfacial and electrical properties in the structures based on InP

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    64. Ahaitouf, A; Bath, A; Thevenin, P; Abarkan, E
      Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    65. Iqbal, M; Galibert, J; Wasim, SM; Hernandez, E; Bocaranda, P; Leotin, J
      Variable range hopping conduction in p-type CuInTe2

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    66. Driad, R; McKinnon, WR; Lu, ZH; McAlister, SP
      Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors

      JOURNAL OF ELECTRONIC MATERIALS
    67. Yang, SY; Yoo, JB
      Characteristics of Zn diffusion in planar and patterned InP substrate using Zn3P2 film and rapid thermal annealing process

      SURFACE & COATINGS TECHNOLOGY
    68. Schmidt, WG; Bernholc, J; Bechstedt, F
      (001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures

      APPLIED SURFACE SCIENCE
    69. Suzuki, Y; Kumano, H; Tomota, W; Sanada, N; Fukuda, Y
      Nitridation of an InP(001) surface by nitrogen ion beams

      APPLIED SURFACE SCIENCE
    70. Flicstein, J; Guillonneau, E; Marquez, J; Chun, LSHK; Maisonneuve, D; David, C; Wang, Z; Palmier, JF; Courant, JL
      Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

      APPLIED SURFACE SCIENCE
    71. Jayavel, P; Ghosh, S; Jhingan, A; Avasthi, DK; Asokan, K; Kumar, J
      Study on the performance of SI-GaAs and SI-InP surface barrier detectors for alpha and gamma detection

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    72. Yu, KM; Ridgway, MC
      Zinc and group V element co-implantation in indium phosphide

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    73. Cantelli, R; Cordero, F; Palumbo, O; Cannelli, G; Trequattrini, F; Guadalupi, GM; Molinas, B
      Mechanisms of the semi-insulating of InP by anelastic spectroscopy

      PHYSICAL REVIEW B
    74. Rojas-Lopez, M; Nieto-Navarro, J; Rosendo, E; Navarro-Contreras, H; Vidal, MA
      Raman scattering study of photoluminescent spark-processed porous InP

      THIN SOLID FILMS
    75. Dmitruk, NL; Borkovskaya, OY; Mamontova, IB; Mayeva, OI; Yastrubchak, OB
      Ultraviolet responsivity control in Schottky barrier heterostructures withtextured interface

      THIN SOLID FILMS
    76. Hannappel, T; Toben, L; Visbeck, S; Crawack, HJ; Pettenkofer, C; Willig, F
      UPS and 20 K reflectance anisotropy spectroscopy of the P-rich and In-richsurfaces of InP(100)

      SURFACE SCIENCE
    77. Guo, Q; Pemble, ME; Williams, EM
      Structural transformations of InP(001) surfaces

      SURFACE SCIENCE
    78. Pulci, O; Ludge, K; Schmidt, WG; Bechstedt, F
      First-principles study of (2 x 1) and (2 x 2) phosphorus-rich InP(001) surfaces

      SURFACE SCIENCE
    79. Mankefors, S
      A theoretical investigation of ideal III-V (211) surfaces

      SURFACE SCIENCE
    80. Ahaitouf, A; Losson, E; Bath, A
      On the determination of interface state density in n-InP Schottky structures by current-voltage measurements - Comparison with DLTS results

      SOLID-STATE ELECTRONICS
    81. Dinia, A; Zollo, G; Pizzuto, C; Vitali, G; Kalitzova, M
      In-depth characterisation of electrical carrier activation in Zn+-implanted and laser annealed InP

      SOLID STATE COMMUNICATIONS
    82. Zhao, YW; Fung, S; Beling, CD; Sun, NF; Chen, XD; Sun, TN; Zhang, J; Bi, KY; Wu, X
      Carrier mobility distribution in annealed undoped LEC InP material

      JOURNAL OF CRYSTAL GROWTH
    83. Naritsuka, S; Nishinaga, T; Tachikawa, M; Mori, H
      Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source

      JOURNAL OF CRYSTAL GROWTH
    84. Otsuka, N; Nishizawa, J; Kikuchi, H; Oyama, Y
      Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

      JOURNAL OF CRYSTAL GROWTH
    85. Fornari, R; Gorog, T; Jimenez, J; De la Puente, E; Avella, M; Grant, I; Brozel, M; Nicholls, M
      Uniformity of semi-insulating InP wafers obtained by Fe diffusion

      JOURNAL OF APPLIED PHYSICS
    86. Zheng, HQ; Radahakrishnan, K; Yoon, SF; Ng, GI
      Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell

      JOURNAL OF APPLIED PHYSICS
    87. Tanskanen, JM; Kangaslahti, P; Ahtola, H; Jukkala, P; Karttaavi, T; Lahdes, M; Varis, J; Tuovinen, J
      Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    88. Wang, H; Ng, GI
      Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    89. Wang, H; Ng, GI
      Current transient in polyimide-passivated InP/InGaAs heterojunction bipolar transistors: Systematic experiments and physical model

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    90. Holzman, JF; Vermeulen, FE; Elezzabi, AY
      Ultrafast photoconductive self-switching of subpicosecond electrical pulses

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    91. Hassel, AW; Aihara, M; Seo, M
      Formation and corrosion of InP/In contacts in hydrochloric acid

      ELECTROCHIMICA ACTA
    92. Feng, PY; Balasubramanian, K
      Potential energy surfaces of electronic states of AlP2, Al2P and their ions

      CHEMICAL PHYSICS LETTERS
    93. von Hanisch, C; Fenske, D; Kattannek, M; Ahlrichs, R
      [In-3(In-2)(3)(PhP)(4)(Ph2P2)(3)Cl-7(PEt3)(3)] - A new molecular III/V compound featuring an unusual 19-atom cage

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    94. Udhayasankar, M; Kumar, J; Ramasamy, P
      New electrolytes for n-type InP and electrochemical C-V profiling of a semiconductor optical amplifier device structure

      JOURNAL OF SOLID STATE ELECTROCHEMISTRY
    95. Iqbal, M; Galibert, J; Leotin, J; Waffenschmidt, S; Von Lohneysen, H
      Magnetic-field induced crossover from Efros-Shklovskii to Mott variable range hopping in Si :(P,B)

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    96. Green, M; O'Brien, P
      Recent advances in the preparation of semiconductors as isolated nanometric particles: new routes to quantum dots

      CHEMICAL COMMUNICATIONS
    97. Feng, PY; Balasubramanian, K
      Spectroscopic properties of Al2P2, Al2P2+, and Al2P2- and comparison with their Ga and In analogues

      JOURNAL OF PHYSICAL CHEMISTRY A
    98. Guk, EG; Kamanin, AV; Shmidt, NM; Shuman, VB; Yurre, TA
      Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review

      SEMICONDUCTORS
    99. Mason, B; Fish, GA; DenBaars, SP; Coldren, LA
      Widely tunable sampled grating DBR laser with integrated electroabsorptionmodulator

      IEEE PHOTONICS TECHNOLOGY LETTERS
    100. Yan, P; Xie, Y; Wang, WZ; Liu, FY; Qian, YT
      A low-temperature route to InP nanocrystals

      JOURNAL OF MATERIALS CHEMISTRY


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Documento generato il 10/08/20 alle ore 09:09:12