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La ricerca find articoli where soggetti phrase all words 'INDIUM NITRIDE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 86 riferimenti
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    1. Cumberland, RW; Blair, RG; Wallace, CH; Reynolds, TK; Kaner, RB
      Thermal control of metathesis reactions producing GaN and InN

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. Li, F; Mo, D; Cao, CB; Zhang, YL; Chan, HLW; Choy, CL
      Ellipsometry study of InN thin films prepared by magnetron sputtering

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    3. Ranade, MR; Tessier, F; Navrotsky, A; Marchand, R
      Calorimetric determination of the enthalpy of formation of InN and comparison with AlN and GaN

      JOURNAL OF MATERIALS RESEARCH
    4. Yodo, T; Ando, H; Nosei, D; Harada, Y
      Growth and characterization of InN heteroepitaxial layers grown on Si substrates by ECR-assisted MBE

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    5. Bhuiyan, AG; Yamamoto, A; Hashimoto, A
      A novel two-step method for improvement of MOVPE grown InN film on GaP(111)B substrate

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    6. Hwang, JS; Lee, CH; Yang, FH; Chen, KH; Hwa, LG; Yang, YJ; Chen, LC
      Resistive heated MOCVD deposition of InN films

      MATERIALS CHEMISTRY AND PHYSICS
    7. Hecht, JD; Frost, F; Chasse, T; Hirsch, D; Neumann, H; Schindler, A; Bigl, F
      In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

      APPLIED SURFACE SCIENCE
    8. Guo, QX; Murata, K; Nishio, M; Ogawa, H
      Growth of InN films on (111)GaAs substrates by reactive magnetron sputtering

      APPLIED SURFACE SCIENCE
    9. Guo, QX; Okada, A; Nishio, M; Ogawa, H
      Effect of the substrate pretreatment on the epitaxial growth of indium nitride

      APPLIED SURFACE SCIENCE
    10. Saito, N; Igasaki, Y
      Electrical and optical properties of InN films prepared by reactive sputtering

      APPLIED SURFACE SCIENCE
    11. Bertani, R; Crociani, L; D'Arcangelo, G; Rossetto, G; Traldi, P; Zanella, P
      Reactions of InMe3 with isocyanides in the presence of amines: chemical and mass spectrometric evidence of unprecedented insertion into In-N bonds

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    12. Inushima, T; Mamutin, VV; Vekshin, VA; Ivanov, SV; Sakon, T; Motokawa, M; Ohoya, S
      Physical properties of InN with the band gap energy of 1.1eV

      JOURNAL OF CRYSTAL GROWTH
    13. Laws, GM; Larkins, EC; Harrison, I; Molloy, C; Somerford, D
      Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys

      JOURNAL OF APPLIED PHYSICS
    14. Farahmand, M; Garetto, C; Bellotti, E; Brennan, KF; Goano, M; Ghillino, E; Ghione, G; Albrecht, JD; Ruden, PP
      Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    15. Saito, Y; Teraguchi, N; Suzuki, A; Araki, T; Nanishi, Y
      Growth of high-electron-mobility InN by RF molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    16. Bouarissa, N
      Composition dependence of positron states in zincblende Ga1-xInxN

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    17. Mamutin, VV; Shubina, TV; Vekshin, VA; Ratnikov, VV; Toropov, AA; Ivanov, SV; Karlsteen, M; Sodervall, U; Willander, M
      Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties

      APPLIED SURFACE SCIENCE
    18. Flicstein, J; Guillonneau, E; Marquez, J; Chun, LSHK; Maisonneuve, D; David, C; Wang, Z; Palmier, JF; Courant, JL
      Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

      APPLIED SURFACE SCIENCE
    19. Agullo-Rueda, F; Mendez, EE; Bojarczuk, B; Guha, S
      Raman spectroscopy of wurtzite InN films grown on Si

      SOLID STATE COMMUNICATIONS
    20. Dyck, JS; Kim, K; Limpijumnong, S; Lambrecht, WRL; Kash, K; Angus, JC
      Identification of Raman-active phonon modes in oriented platelets of InN and polycrystalline InN

      SOLID STATE COMMUNICATIONS
    21. Bae, BJ; Park, JE; Kim, B; Park, JT
      Structural characterization of a dimeric dimethylindium azide and its use as a single-source precursor for InN thin films

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    22. Guo, QX; Matsuse, M; Nishio, M; Ogawa, H
      Reactive ion etching of indium nitride using CH4 and H-2 gases

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. Shamrell, RT; Parman, C
      Optical properties of reactively sputtered indium nitride thin films

      OPTICAL MATERIALS
    24. Long, FH; Pophristic, M; Tran, C; Kalicek, RF; Feng, ZC; Ferguson, I
      Time-resolved laser spectroscopy of nitride semiconductors

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    25. Blant, AV; Cheng, TS; Jeffs, NJ; Flannery, LB; Harrison, I; Mosselmans, JFW; Smith, AD; Foxon, CT
      EXAFS studies of Mg doped InN grown on Al2O3

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    26. Li, K; Wee, ATS; Lin, J; Feng, ZC; Lau, EWP
      Compositional and morphological analysis of InxGa1-xN/GaN epilayers

      SURFACE AND INTERFACE ANALYSIS
    27. Guo, QX; Shingai, N; Mitsuishi, Y; Nishio, M; Ogawa, H
      Effects of nitrogen argon ratio on composition and structure of InN films prepared by r.f. magnetron sputtering

      THIN SOLID FILMS
    28. Inushima, T; Shiraishi, T; Davydov, VY
      Phonon structure of InN grown by atomic layer epitaxy

      SOLID STATE COMMUNICATIONS
    29. Fischer, RA; Sussek, H; Parala, H; Pritzkow, H
      Precursor chemistry of Group 13 nitrides XV: synthesis and structure of adduct stabilized bis- and trisazides of indium; thermoanalytic characterisation of py(3)In(N-3)(3)

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    30. Djurisic, AB; Li, EH
      Modeling the optical constants of hexagonal GaN, InN, and AlN

      JOURNAL OF APPLIED PHYSICS
    31. Bellotti, E; Doshi, BK; Brennan, KF; Albrecht, JD; Ruden, PP
      Ensemble Monte Carlo study of electron transport in wurtzite InN

      JOURNAL OF APPLIED PHYSICS
    32. Yamaguchi, S; Kariya, M; Nitta, S; Takeuchi, T; Wetzel, C; Amano, H; Akasaki, I
      Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

      JOURNAL OF APPLIED PHYSICS
    33. Foutz, BE; O'Leary, SK; Shur, MS; Eastman, LF
      Transient electron transport in wurtzite GaN, InN, and AlN

      JOURNAL OF APPLIED PHYSICS
    34. Asai, N; Inoue, Y; Sugimura, H; Takai, O
      Electrochromic reaction of InN thin films

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    35. Davydov, VY; Emtsev, VV; Goncharuk, IN; Smirnov, AN; Petrikov, VD; Mamutin, VV; Vekshin, VA; Ivanov, SV; Smirnov, MB; Inushima, T
      Experimental and theoretical studies of phonons in hexagonal InN

      APPLIED PHYSICS LETTERS
    36. Guo, QX; Nishio, M; Ogawa, H; Yoshida, A
      Low-temperature growth of InN films on (111)GaAs substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    37. TOKARZEWSKI A; PODSIADLO S
      FORMATION AND THERMAL-DECOMPOSITION OF INDIUM OXYNITRIDE COMPOUNDS

      JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
    38. ALEKSANDROV SE; ZYKOV VA; GAVRIKOVA TA; KRASOVITSKII DM
      ELECTRIC AND PHOTOELECTRIC PROPERTIES OF N-GAXIN1-XN P-SI ANISOTYPIC HETEROJUNCTIONS/

      Semiconductors
    39. LEITNER J; STEJSKAL J
      THERMODYNAMIC ASPECTS OF THE GA1-XINXN GROWTH BY MOCVD

      Materials letters
    40. Bryden, WA; Kistenmacher, TJ
      Growth of group III-A nitrides by reactive sputtering

      GALLIUM NITRIDE (GAN) I
    41. ASAI N; INOUE Y; SUGIMURA H; TAKAI O
      STRUCTURAL AND ELECTROCHROMIC PROPERTIES OF INN THIN-FILMS

      Thin solid films
    42. TAKAI O; IKUTA K; INOUE Y
      GROWTH AND NANOSTRUCTURE OF INN THIN-FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING

      Thin solid films
    43. Ikuta, K; Inoue, Y; Takai, O
      Optical and electrical properties of InN thin films grown on ZnO/alpha-Al2O3 by RF reactive magnetron sputtering

      THIN SOLID FILMS
    44. GRUDOWSKI PA; EITING CJ; DUPUIS RD
      PROPERTIES OF INGAN MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES GROWN BY-METALORGANIC CHEMICAL-VAPOR-DEPOSITION

      Journal of crystal growth
    45. MATSUMURA S; INUSHIMA T; SHIRAISHI T
      LATTICE STABILITY STUDY OF NITRIDE SEMICONDUCTORS BY THE USE OF MOLECULAR-DYNAMICS CALCULATION

      Journal of crystal growth
    46. YEO YC; CHONG TC; LI MF
      ELECTRONIC BAND STRUCTURES AND EFFECTIVE-MASS PARAMETERS OF WURTZITE GAN AND INN

      Journal of applied physics
    47. NAKAMURA S
      FIRST LASER-DIODES FABRICATED FROM III-V NITRIDE BASED MATERIALS

      Materials science & engineering. B, Solid-state materials for advanced technology
    48. LU HQ; THOTHATHIRI M; WU ZM; BHAT I
      STUDY OF INDIUM DROPLETS FORMATION ON THE INXGA1-XN FILMS BY SINGLE-CRYSTAL X-RAY-DIFFRACTION

      Journal of electronic materials
    49. KELLER S; MISHRA UK; DENBAARS SP
      FLOW MODULATION EPITAXY OF INDIUM GALLIUM NITRIDE

      Journal of electronic materials
    50. OHKUBO M; NONOMURA S; WATANABE H; GOTOH T; YAMAMOTO K; NITTA S
      OPTICAL-PROPERTIES OF AMORPHOUS INDIUM NITRIDE FILMS AND THEIR ELECTROCHROMIC AND PHOTODARKENING EFFECTS

      Applied surface science
    51. FISCHER RA; SUSSEK H; MIEHR A; PRITZKOW H; HERDTWECK E
      ORGANOINDIUM AZIDES - NEW PRECURSORS TO INDIUM NITRIDE

      Journal of organometallic chemistry
    52. SATO M
      CARRIER DENSITY OF EPITAXIAL INN GROWN BY PLASMA-ASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    53. SATO M
      EPITAXIAL-GROWTH OF INN BY PLASMA-ASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    54. MIURA N; ISHII H; YAMADA A; KONAGAI M; YAMAUCHI Y; YAMAMOTO A
      ANOMALOUS ELECTRICAL CHARACTERISTICS OF EPITAXIAL INN FILMS HAVING A HIGH ELECTRON-CONCENTRATION AT VERY-LOW TEMPERATURE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    55. CHEN WK; PAN YC; LIN HC; OU J; CHEN WH; LEE MC
      GROWTH AND X-RAY CHARACTERIZATION OF AN INN FILM ON SAPPHIRE PREPAREDBY METALORGANIC VAPOR-PHASE EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    56. AMBACHER O; BRANDT MS; DIMITROV R; METZGER T; STUTZMANN M; FISCHER RA; MIEHR A; BERGMAIER A; DOLLINGER G
      THERMAL-STABILITY AND DESORPTION OF GROUP-III NITRIDES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    57. FISCHER RA; MIEHR A; METZGER T; BORN E; AMBACHER O; ANGERER H; DIMITROV R
      LOW-TEMPERATURE OMCVD OF INN THIN-FILMS FROM THE NOVEL AIR-STABLE SINGLE-MOLECULE PRECURSOR AZIDO(BIS[(3-DIMETHYLAMINO)PROPYL])INDIUM, (N-3)IN[(CH2)(3)NME(2)](2)

      Chemistry of materials
    58. NEUMAYER DA; EKERDT JG
      GROWTH OF GROUP-III NITRIDES - A REVIEW OF PRECURSORS AND TECHNIQUES

      Chemistry of materials
    59. PAN JS; WEE ATS; HUAN CHA; TAN HS; TAN KL
      XPS STUDIES ON NITRIDATION OF INP(100) SURFACE BY N-2(-BEAM BOMBARDMENT() ION)

      Journal of physics. D, Applied physics
    60. SHAH P; MITIN V; GRUPEN M; SONG GH; HESS K
      NUMERICAL-SIMULATION OF WIDE BAND-GAP ALGAN INGAN LIGHT-EMITTING-DIODES FOR OUTPUT POWER CHARACTERISTICS AND EMISSION-SPECTRA/

      Journal of applied physics
    61. SATO Y; SATO S
      INN THIN-FILM GROWTH USING AN ECR PLASMA SOURCE

      Materials science & engineering. B, Solid-state materials for advanced technology
    62. GETMAN TD; FRANKLIN GW
      SINGLE-SOURCE PRECURSORS TO GROUP-III (13)METAL NITRIDES

      Comments on modern chemistry. Part A, Comments on inorganic chemistry
    63. WRIGHT AF; NELSON JS
      CONSISTENT STRUCTURAL-PROPERTIES FOR ALN, GAN, AND INN

      Physical review. B, Condensed matter
    64. PODSIADLO S
      STAGES OF THE SYNTHESIS OF INDIUM NITRIDE WITH THE USE OF UREA

      Thermochimica acta
    65. SATO Y; SATO S
      INFLUENCE OF GROWTH-RATES ON PROPERTIES OF INN THIN-FILMS

      Journal of crystal growth
    66. GUO QX; OGAWA H; YOSHIDA A
      GROWTH OF ALXIN1-XN SINGLE-CRYSTAL FILMS BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY

      Journal of crystal growth
    67. MOHAMMAD SN; SALVADOR AA; MORKOC H
      EMERGING GALLIUM NITRIDE BASED DEVICES

      Proceedings of the IEEE
    68. BU Y; LIN MC
      LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF III V-NITRIDES USING ORGANOMETALLICS AND HYDRAZOIC ACID PRECURSORS/

      Journal of the Chinese Chemical Society
    69. GUO QX; OGAWA H; YAMANO H; YOSHIDA A
      GROWTH OF INN FILMS ON GAAS(111) AND GAP(111) SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY

      Applied physics letters
    70. GUO QX; ITOH N; OGAWA H; YOSHIDA A
      CRYSTAL-STRUCTURE AND ORIENTATION OF ALXIN1-XN EPITAXIAL LAYERS GROWNON (0001)ALPHA-AL2O3 SUBSTRATES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    71. YAMAMOTO A; TSUJINO M; OHKUBO M; HASHIMOTO A
      METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF INN FOR INN SI TANDEM SOLAR-CELL/

      Solar energy materials and solar cells
    72. SATO Y; SATO S
      ELECTRICAL AND OPTICAL-PROPERTIES OF INN- IN2O3 THIN-FILMS

      Nippon Seramikkusu Kyokai gakujutsu ronbunshi
    73. CHRISTENSEN NE; GORCZYCA I
      OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE

      Physical review. B, Condensed matter
    74. BRYDEN WA; ECELBERGER SA; KISTENMACHER TJ
      HE N2 REACTIVE GAS-COMPOSITION AND THE STRUCTURAL AND ELECTRICAL-PROPERTIES OF INN THIN-FILMS GROWN ON ALN-NUCLEATED (00.1) SAPPHIRE BY PLANAR MAGNETRON SPUTTERING/

      Thin solid films
    75. SATO Y; SATO S
      GROWTH OF INN THIN-FILMS BY HYDRIDE VAPOR-PHASE EPITAXY

      Journal of crystal growth
    76. YAMAMOTO A; TSUJINO M; OHKUBO M; HASHIMOTO A
      NITRIDATION EFFECTS OF SUBSTRATE SURFACE ON THE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF INN ON SI AND ALPHA-AL2O3 SUBSTRATES

      Journal of crystal growth
    77. GUO QX; YAMAMURA T; YOSHIDA A; ITOH N
      STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON SAPPHIRE SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY

      Journal of applied physics
    78. BRYDEN WA; ECELBERGER SA; KISTENMACHER TJ
      HETEROEPITAXIAL GROWTH OF INN ON ALN-NUCLEATED (00.1) SAPPHIRE BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON RESONANCE-ASSISTED REACTIVE MAGNETRONSPUTTERING

      Applied physics letters
    79. REN F; ABERNATHY CR; PEARTON SJ; WISK PW
      THERMAL-STABILITY OF TI PT/AU NONALLOYED OHMIC CONTACTS ON INN/

      Applied physics letters
    80. SATO Y; KAKINUMA S; SATO S
      INN THIN-FILM GROWTH USING N-2, NH3 AND N-2-HE RF PLASMAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    81. GUO QX; YOSHIDA A
      TEMPERATURE-DEPENDENCE OF BAND-GAP CHANGE IN INN AND ALN

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    82. GUO QX; YOSHIDA A
      MICROHARDNESS OF INDIUM NITRIDE SINGLE-CRYSTAL FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    83. BU Y; MA L; LIN MC
      LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF INN ON SI(100)

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    84. XU YN; CHING WY
      ELECTRONIC, OPTICAL, AND STRUCTURAL-PROPERTIES OF SOME WURTZITE CRYSTALS

      Physical review. B, Condensed matter
    85. STRITE S; LIN ME; MORKOC H
      PROGRESS AND PROSPECTS FOR GAN AND THE III-V-NITRIDE SEMICONDUCTORS

      Thin solid films
    86. KISTENMACHER TJ; ECELBERGER SA; BRYDEN WA
      STRUCTURAL AND ELECTRICAL-PROPERTIES OF REACTIVELY SPUTTERED INN THIN-FILMS ON ALN-BUFFERED (00.1) SAPPHIRE SUBSTRATES - DEPENDENCE ON BUFFER AND FILM GROWTH TEMPERATURES AND THICKNESSES

      Journal of applied physics


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Documento generato il 20/10/20 alle ore 03:11:42