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La ricerca find articoli where soggetti phrase all words 'INAS/GAAS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 87 riferimenti
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    1. Vasanelli, A; De Giorgi, M; Ferreira, R; Cingolani, R; Bastard, G
      Energy levels and far-infrared absorption of multi-stacked dots

      PHYSICA E
    2. Niu, ZC; Wang, XD; Miao, ZH; Feng, SL
      Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    3. Albe, V; Lewis, LJ
      Optical properties of InAs/InP ultrathin quantum wells

      PHYSICA B
    4. Koche, N; Plentz, F; Rodrigues, WN; Moreira, MVB; de Oliveira, AG; Gonzales, JC
      Magnetoluminescence of InAs self-assembled dots embedded in a two-dimensional electron gas

      PHYSICA B
    5. Hanada, T; Koo, BH; Totsuka, H; Yao, T
      Anisotropic shape of self-assembled InAs quantum dots: Refraction effect on spot shape of reflection high-energy electron diffraction - art. no. 165307

      PHYSICAL REVIEW B
    6. Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM
      Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots

      COMPUTER PHYSICS COMMUNICATIONS
    7. Muller-Kirsch, L; Heitz, R; Pohl, UW; Bimberg, D; Hausler, I; Kirmse, H; Neumann, W
      Temporal evolution of GaSb/GaAs quantum dot formation

      APPLIED PHYSICS LETTERS
    8. Paskov, PP; Holtz, PO; Monemar, B; Garcia, JM; Schoenfeld, WV; Petroff, PM
      Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    9. Paskov, PP; Holtz, PO; Monemar, B; Garcia, JM; Schoenfeld, WV; Petroff, PM
      Optical up-conversion processes in InAs quantum dots

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Matsuda, S; Asahi, H; Mori, J; Watanabe, D; Asami, K
      1.3-1.6-mu m-wavelength quantum dots self-formed in GaAs/InAs short-periodsuperlattices grown on InP (411)A substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    11. Lee, S; Kim, JC; Rho, H; Kim, CS; Smith, LM; Jackson, HE; Furdyna, JK; Dobrowolska, M
      Origin of two types of excitons in CdSe dots on ZnSe

      PHYSICAL REVIEW B
    12. Gupta, JA; Watkins, SP; Crozier, ED; Woicik, JC; Harrison, DA; Jiang, DT; Pickering, IJ; Karlin, BA
      Layer perfection in ultrathin InAs quantum wells in GaAs(001)

      PHYSICAL REVIEW B
    13. Kim, KS; Hong, CH; Lee, WH; Kim, CS; Cha, OH; Yang, GM; Suh, EK; Lim, KY; Lee, HJ; Cho, HK; Lee, JY; Seo, JM
      Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    14. Sobolev, MM; Kochnev, IV; Lantratov, VM; Bert, NA; Cherkashin, NA; Ledentsov, NN; Bedarev, DA
      Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands

      SEMICONDUCTORS
    15. Kato, HT; Iwai, M; Muramatsu, Y; Kinoshita, K; Yoda, S
      Single crystal growth of compositionally graded InxGa1-xAs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    16. Hjiri, M; Hassen, F; Maaref, H
      Optical characterisation of self organized InAs/GaAs quantum dots grown byMBE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    17. Hjiri, M; Hassen, F; Maaref, H
      Optical characterisation of InAs/GaAs structures grown by MBE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    18. Seufert, J; Rambach, M; Bacher, G; Forchel, A; Keim, M; Ivanov, S; Waag, A; Landwehr, G
      Be-induced island formation in CdSe/ZnSe heterostructures: Ensemble versussingle dot studies

      PHYSICAL REVIEW B
    19. Tillmann, K; Forster, A
      Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)

      THIN SOLID FILMS
    20. Przeslawski, T; Wolkenberg, A; Reginski, K; Kaniewski, J; Bak-Misiuk, J
      Growth and transport properties of relaxed epilayers of InAs on GaAs

      THIN SOLID FILMS
    21. Borri, P; Langbein, W; Mork, J; Hvam, JM; Heinrichsdorff, F; Mao, MH; Bimberg, D
      Room-temperature dephasing in InAs quantum dots

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    22. Liu, CP; Miller, PD; Henstrom, WL; Gibson, JM
      Transmission electron microscopy of semiconductor quantum dots

      JOURNAL OF MICROSCOPY-OXFORD
    23. Furukawa, Y; Noda, S
      Difference of anisotropic structures of InAs/GaAs quantum dots between organometallic vapor-phase epitaxy and molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    24. Zhang, YC; Huang, CJ; Liu, FQ; Xu, B; Ding, D; Jiang, WH; Li, YF; Ye, XL; Wu, J; Chen, YH; Wang, ZG
      Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

      JOURNAL OF CRYSTAL GROWTH
    25. Wang, HL; Yang, FH; Feng, SL
      Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots

      JOURNAL OF CRYSTAL GROWTH
    26. Wang, HL; Ning, D; Feng, SL
      Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution

      JOURNAL OF CRYSTAL GROWTH
    27. Nakata, Y; Mukai, K; Sugawara, M; Ohtsubo, K; Ishikawa, H; Yokoyama, N
      Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 mu m

      JOURNAL OF CRYSTAL GROWTH
    28. Wang, HL; Ning, D; Zhu, HJ; Chen, F; Wang, H; Wang, XD; Feng, SL
      Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

      JOURNAL OF CRYSTAL GROWTH
    29. Budiman, RA; Ruda, HE
      Relaxation model of coherent island formation in heteroepitaxial thin films

      JOURNAL OF APPLIED PHYSICS
    30. Wang, HL; Zhu, HJ; Li, Q; Ning, D; Wang, H; Wang, XD; Deng, YM; Feng, SL
      The effect of dopant Si on the uniformity of self-organized InAs quantum dots

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    31. Wang, HL; Zhu, HJ; Ning, D; Chen, F; Feng, SL
      Hole capture barrier of self-organized InAs quantum dots

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    32. Joyce, BA; Vvedensky, DD; Bell, GR; Belk, JG; Itoh, M; Jones, TS
      Nucleation and growth mechanisms during MBE of III-V compounds

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    33. Heitz, R; Mukhametzanov, I; Born, H; Grundmann, M; Hoffmann, A; Madhukar, A; Bimberg, D
      Hot carrier relaxation in InAs/GaAs quantum dots

      PHYSICA B
    34. Walther, C; Herrmann, B; Hahnert, I; Neumann, W; Masselink, WT
      Electrical transport in superlattices containing InAs quantum dots in GaAsand InP

      SUPERLATTICES AND MICROSTRUCTURES
    35. Heitz, R; Mukhametzhanov, I; Zeng, J; Chen, P; Madhukar, A; Bimberg, D
      Excitation transfer in novel self-organized quantum dot structures

      SUPERLATTICES AND MICROSTRUCTURES
    36. Solomon, GS
      Electronic coupling and structural ordering of quantum dots using InAs quantum dot columns

      JOURNAL OF ELECTRONIC MATERIALS
    37. Sharma, PC; Alt, KW; Yeh, DY; Wang, D; Wang, KL
      Formation of nanometer-scale InAs islands on silicon

      JOURNAL OF ELECTRONIC MATERIALS
    38. Furukawa, Y; Noda, S; Ishii, M; Wakahara, A; Sasaki, A
      Stacking number dependence of size distribution of vertically stacked InAsGaAs quantum dots

      JOURNAL OF ELECTRONIC MATERIALS
    39. Lee, H; Yang, WD; Sercel, PC; Norman, AG
      The shape of self-assembled InAs islands grown by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    40. Heitz, R; Mukhametzhanov, I; Madhukar, A; Hoffmann, A; Bimberg, D
      Temperature dependent optical properties of self-organized InAs GaAs quantum dots

      JOURNAL OF ELECTRONIC MATERIALS
    41. Pashley, DW
      Epitaxy growth mechanisms

      MATERIALS SCIENCE AND TECHNOLOGY
    42. Liu, QKK; Moll, N; Scheffler, M; Pehlke, E
      Equilibrium shapes and energies of coherent strained InP islands

      PHYSICAL REVIEW B-CONDENSED MATTER
    43. Oyama, N; Ohta, E; Takeda, K; Shiraishi, K; Yamaguchi, H
      First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(110) and GaAs/InAs(110) heteroepitaxies

      JOURNAL OF CRYSTAL GROWTH
    44. Frigeri, P; Bosacchi, A; Franchi, S; Allegri, P; Avanzini, V
      Vertically stacked quantum dots grown by ALMBE and MBE

      JOURNAL OF CRYSTAL GROWTH
    45. Ebiko, Y; Muto, S; Suzuki, D; Itoh, S; Shiramine, K; Haga, T; Nakata, Y; Sugiyama, Y; Yokoyama, N
      Volume distributions of InAs GaAs self-assembled quantum dots by Stranski-Krastanow mode

      JOURNAL OF CRYSTAL GROWTH
    46. Safar, GAM; Rodrigues, WN; Moreira, MVB; de Oliveira, AG; Neves, BRA; Vilela, JM; Andrade, MS; Rochet, F
      Influence of Te on the morphology of InAs self-assembled nanocrystals

      JOURNAL OF CRYSTAL GROWTH
    47. Zhao, Q; Feng, SL; Ning, D; Zhu, HJ; Wang, ZM; Deng, YM
      Si doping effect on self-organized InAs/GaAs quantum dots

      JOURNAL OF CRYSTAL GROWTH
    48. Storm, DF; Lange, MD; Cole, TL
      Surfactant effects of thallium in the epitaxial growth of indium arsenide on gallium arsenide(001)

      JOURNAL OF APPLIED PHYSICS
    49. Zhu, HJ; Feng, SL; Jiang, DS; Deng, YM; Wang, HL
      Strain effect on the band structure of InAs/GaAs quantum dots

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    50. JOYCE BA; JONES TS; BELK JG
      REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SCANNING-TUNNELING-MICROSCOPY STUDY OF INAS GROWTH ON THE 3 LOW-INDEX ORIENTATIONS OF GAAS - 2-DIMENSIONAL VERSUS 3-DIMENSIONAL GROWTH AND STRAIN RELAXATION

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    51. CUSACK MA; BRIDDON PR; JAROS M
      ELECTRONIC-STRUCTURE, IMPURITY BINDING-ENERGIES, ABSORPTION-SPECTRA OF INAS GAAS QUANTUM DOTS/

      Physica. B, Condensed matter
    52. MILLER BT; HANSEN W; MANUS S; LUYKEN RJ; LORKE A; KOTTHAUS JP; MEDEIROSRIBEIRO G; PETROFF PM
      FINE-STRUCTURE IN THE SPECTRUM OF THE FEW-ELECTRON GROUND-STATES OF SELF-ASSEMBLED QUANTUM DOTS

      Physica. B, Condensed matter
    53. BROUNKOV PN; SUVOROVA AA; MAXIMOV MV; TSATSULNIKOV AF; ZHUKOV AE; EGOROV AY; KOVSH AR; KONNIKOV SG; IHN T; STODDART ST; EAVES L; MAIN PC
      ELECTRON-ESCAPE FROM SELF-ASSEMBLED INAS GAAS QUANTUM-DOT STACKS/

      Physica. B, Condensed matter
    54. CHEN F; FENG SL; ZHAO Q; WANG ZR
      EVIDENCE OF MULTIMODAL PATTERNS OF SELF-ORGANIZED QUANTUM DOTS

      Superlattices and microstructures
    55. XU ZY; LU ZD; YUAN ZL; YANG XP; ZHENG BZ; XU JZ; GE WK; WANG Y; WANG J; CHANG LL
      THERMAL-ACTIVATION AND THERMAL TRANSFER OF LOCALIZED EXCITONS IN INASSELF-ORGANIZED QUANTUM DOTS

      Superlattices and microstructures
    56. ROUVIMOV S; LILIENTALWEBER Z; SWIDER W; WASHBURN J; WEBER ER; SASAKI A; WAKAHARA A; FURKAWA Y; ABE T; NODA S
      EFFECTS OF GAAS-SPACER STRAIN ON VERTICAL ORDERING OF STACKED INAS QUANTUM DOTS IN A GAAS MATRIX

      Journal of electronic materials
    57. WANG ZM; FENG SL; LU ZD; ZHAO Q; YANG XP; CHEN ZG; XU ZY; ZHENG HZ
      ANNEALING BEHAVIOR OF INAS GAAS QUANTUM-DOT STRUCTURES/

      Journal of electronic materials
    58. WAGNER G
      MISFIT STRAIN RELAXATION BY DISLOCATIONS IN INAS ISLANDS AND LAYERS EPITAXIALLY GROWN ON (001)GAAS SUBSTRATES BY MOVPE

      Crystal research and technology
    59. HEINRICHSDORFF F; KROST A; BIMBERG D; KOSOGOV AO; WERNER P
      SELF-ORGANIZED DEFECT-FREE INAS GAAS AND INAS/INGAAS/GAAS QUANTUM DOTS WITH HIGH LATERAL DENSITY GROWN BY MOCVD/

      Applied surface science
    60. MAXIMOV MV; LEDENTSOV NN; TSATSULNIKOV AF; USTINOV VM; SAKHAROV AV; VOLOVIK BV; KRESTNIKOV IL; ZHEN Z; BROUNKOV PN; KONNIKOV SG; KOPEV PS; BELOUSOV MV; TURK V; BIMBERG D
      OPTICAL STUDIES OF MODULATION-DOPED INAS GAAS QUANTUM DOTS/

      Microelectronic engineering
    61. WANG JN; LI RG; WANG YQ; GE WK; TING DZY
      RESONANT-TUNNELING VIA INAS SELF-ORGANIZED QUANTUM-DOT STATES

      Microelectronic engineering
    62. Paul, W
      High pressure in semiconductor physics: A historical overview

      HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I
    63. Muller, E; Ribeiro, E; Heinzel, T; Ensslin, K; Medeiros-Ribeiro, G; Petroff, PM
      TEM study of InAs self-assembled quantum dots in GaAs

      THIN SOLID FILMS
    64. WANG ZM; FENG SL; YANG XP; LU ZD; XU ZY; ZHENG HZ; WANG FL; HAN PD; DUAN XF
      EFFECTS OF GROWTH INTERRUPTION ON SELF-ASSEMBLED INAS GAAS ISLANDS/

      Journal of crystal growth
    65. Lee, JS; Ren, HW; Sugou, S; Masumoto, Y
      In0.5Ga0.5As quantum dot intermixing and evaporation in GaAs capping layergrowth

      JOURNAL OF APPLIED PHYSICS
    66. JIANG HT; SINGH J
      SELF-ASSEMBLED SEMICONDUCTOR STRUCTURES - ELECTRONIC AND OPTOELECTRONIC PROPERTIES

      IEEE journal of quantum electronics
    67. REN HW; NISHI K; SUGOU S; MASUMOTO Y
      SIZE QUANTIZATION IN INAS GAAS SELF-ASSEMBLED QUANTUM DOTS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    68. ATTOLINI G; CHIMENTI E; PELOSI C; LOTTICI PP; CARLES R
      SURFACE-MORPHOLOGY AND RAMAN-SCATTERING IN GAAS INAS(111) HETEROSTRUCTURES GROWN BY MOVPE/

      Materials science & engineering. B, Solid-state materials for advanced technology
    69. WANG LW; ZUNGER A
      MAGNITUDE AND SIZE SCALING OF INTERVALLEY COUPLING IN SEMICONDUCTOR ALLOYS AND SUPERLATTICES

      Physical review. B, Condensed matter
    70. YAMAMOTO M; IWABUCHI T; ITO T; YOSHIDA T; ISOYA T; SHIBASAKI I
      PROPERTIES OF INAS THIN-FILMS GROWN ON (100)-ORIENTED GAAS SUBSTRATE WITH VARIOUS TILTED ANGLES AND DIRECTIONS OF MISORIENTATION

      Journal of crystal growth
    71. REN HW; NISHI K; SUGOU S; SUGISAKI M; MASUMOTO Y
      CONTROL OF INAS SELF-ASSEMBLED ISLANDS ON GAAS VICINAL SURFACES BY ANNEALING IN GAS-SOURCE MOLECULAR-BEAM EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. GRUNDMANN M; BIMBERG D
      GAIN AND THRESHOLD OF QUANTUM-DOT LASERS - THEORY AND COMPARISON TO EXPERIMENTS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. WANG PD; MERZ JL; FAFARD S; LEON R; LEONARD D; MEDEIROSRIBEIRO G; OESTREICH M; PETROFF PM; LEDENTSOV NN; KOPEV PS; USTINOV VM; UCHIDA K; MIURA N; AKIYAMA H; SAKAKI H; TORRES CMS
      MAGNETOOPTICAL PROPERTIES OF INAS MONOLAYERS AND INYAL1-YAS SELF-ASSEMBLED QUANTUM DOTS IN GA(AL)AS MATRICES

      Physica. B, Condensed matter
    74. OH DK; SUH KS; CHOO H; KIM HM; PYUN KE; PARK HM; NAHM S
      LP-MOCVD GROWN (INAS)(M)(GAAS)(M) SHORT-PERIOD SUPERLATTICES ON INP

      Journal of electronic materials
    75. BELK JG; SUDIJONO JL; HOLMES DM; MCCONVILLE CF; JONES TS; JOYCE BA
      SPATIAL-DISTRIBUTION OF IN DURING THE INITIAL-STAGES OF GROWTH OF INAS ON GAAS(001)-C(4X4)

      Surface science
    76. SUZUKI Y; CHIKAURA Y; KII H
      DEPTH-SENSITIVE X-RAY-SCATTERING TOPOGRAPHIC OBSERVATION OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    77. MOREIRA MVB; DEOLIVEIRA AG; PY MA
      PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING (INAS)(M)(GAAS)(N) SUPERLATTICE CHANNELS

      Materials science & engineering. B, Solid-state materials for advanced technology
    78. JE KC; MEIER T; ROSSI F; KOCH SW
      THEORY OF QUASI-EQUILIBRIUM NONLINEAR-OPTICAL ABSORPTION IN SEMICONDUCTOR SUPERLATTICES

      Applied physics letters
    79. PLOOG KH; DAWERITZ L
      NEW CHALLENGES FOR DELTA-LIKE CONFINEMENT OF IMPURITIES IN GAAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    80. ANDRE JP; DESWARTE A; LUGAGNEDELPON E; VOISIN P; RUTERANA P
      HIGH-ELECTRON-MOBILITY IN (INAS)N(GAAS)N SHORT-PERIOD SUPERLATTICES GROWN BY MOVPE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE

      Journal of electronic materials
    81. LIU Q; LINDNER A; SCHEFFER F; PROST W; TEGUDE FJ
      X-RAY-DIFFRACTION CHARACTERIZATION OF HIGHLY STRAINED INAS AND GAAS-LAYERS ON INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

      Journal of applied physics
    82. DOSANIH SS; HART L; NAYAK R; JOYCE BA
      ROOM-TEMPERATURE PHOTOLUMINESCENCE IN THE 1-MU-M REGION FROM INAS MONOLAYER STRUCTURES

      Journal of applied physics
    83. SAITO D; YONEZU H; KAWAI T; YOKOZEKI M; PAK K
      INCREASE OF CRITICAL THICKNESS AND OPTICAL-EMISSION RANGE IN (INAS)(1)(GAAS)(N) STRAINED SHORT-PERIOD SUPERLATTICES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    84. DOSANJH SS; DAWSON P; FAHY MR; JOYCE BA; STRADLING RA; MURRAY R
      OPTICAL STUDIES OF THE GROWTH OF SINGLE MONOLAYER WIDE INAS QUANTUM-WELLS ON GAAS BY MBE

      Journal of crystal growth
    85. DOSANJH SS; ZHANG XM; SANSOM D; HARRIS JJ; FAHY MR; JOYCE BA; CLEGG JB
      SURFACE SEGREGATION EFFECTS OF IN IN GAAS

      Journal of applied physics
    86. HUANG XR; MCCALLUM DS; DAWSON MD; SMIRL AL; BOGGESS TF; HASENBERG TC; TOBER RL
      AMBIPOLAR DIFFUSION AND CARRIER LIFETIME MEASUREMENTS IN ALL-BINARY (INAS)2(GAAS)5 STRAINED QUANTUM-WELLS GROWN ON GAAS

      Journal of applied physics
    87. ILG M; ALONSO MI; LEHMANN A; PLOOG KH; HOHENSTEIN M
      INVESTIGATION OF INAS SUBMONOLAYER AND MONOLAYER STRUCTURES ON GAAS(100) AND (311) SUBSTRATES

      Journal of applied physics


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Documento generato il 27/10/20 alle ore 12:41:37