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La ricerca find articoli where soggetti phrase all words 'INAS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 1074 riferimenti
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    1. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part I - Island density

      JOURNAL OF CRYSTAL GROWTH
    2. Springholz, G; Pinczolits, M; Holy, V; Zerlauth, S; Vavra, I; Bauer, G
      Vertical and lateral ordering in self-organized quantum dot superlattices

      PHYSICA E
    3. Vasanelli, A; De Giorgi, M; Ferreira, R; Cingolani, R; Bastard, G
      Energy levels and far-infrared absorption of multi-stacked dots

      PHYSICA E
    4. Dong, JW; Lu, J; Xie, JQ; Chen, LC; James, RD; McKernan, S; Palmstrom, CJ
      MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs

      PHYSICA E
    5. Durand, O; Berger, V; Bisaro, R; Bouchier, A; De Rossi, A; Marcadet, X; Prevot, I
      Determination of thicknesses and interface roughnesses of GaAs-based and InAs/AlSb-based heterostructures by X-ray reflectometry

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    6. Krier, A
      Physics and technology of mid-infrared light emitting diodes

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    7. Morishita, Y; Kawai, S; Sunagawa, J; Suzuki, T
      Magnetic-field-assisted anodization of GaAs substrates

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    8. Li, HX; Daniels-Race, T; Hasan, MA
      Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    9. Jiang, WH; Xu, HZ; Xu, B; Zhou, W; Gong, Q; Ding, D; Liang, JB; Wang, ZG
      Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    10. Cirlin, GE; Werner, P; Gosele, G; Volovik, BV; Ustinov, VM; Ledentsov, NN
      Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix

      TECHNICAL PHYSICS LETTERS
    11. Berkovits, VL; Gordeeva, AB; Kosobukin, VA
      Local-field effects in reflectance anisotropy spectra of the (001) surfaceof gallium arsenide

      PHYSICS OF THE SOLID STATE
    12. Stoyanov, ND; Mikhailova, MP; Andreichuk, OV; Moiseev, KD; Andreev, IA; Afrailov, MA; Yakovlev, YP
      Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures

      SEMICONDUCTORS
    13. Voronina, TI; Zhurtanov, BE; Lagunova, TS; Mikhailova, MP; Moiseev, KD; Rozov, AE; Yakovlev, YP
      Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties

      SEMICONDUCTORS
    14. Zotova, NV; Karandashev, SA; Matveev, BA; Remennyi, MA; Stus', NM; Talalakin, GN; Shustov, VV
      Optically pumped mid-infrared InGaAs(Sb) LEDs

      SEMICONDUCTORS
    15. Vinokurov, DA; Kapitonov, VA; Nikolaev, DN; Sokolova, ZN; Tarasov, IS
      Optical study of InP quantum dots

      SEMICONDUCTORS
    16. Vengrenovich, RD; Gudyma, YV; Yarema, SV
      Ostwald ripening of quantum-dot nanostructures

      SEMICONDUCTORS
    17. Kul'bachinskii, VA; Lunin, RA; Kytin, VG; Golikov, AV; Demin, AV; Rogozin, VA; Zvonkov, BN; Nekorkin, SM; Filatov, DO
      Electrical transport and persistent photoconductivity in quantum dot layers in InAs/GaAs structures

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    18. Trallero-Herrero, C; Trallero-Giner, C; Ulloa, SE; Perez-Alvarez, R
      Electronic states in a cylindrical quantum lens: Quantum chaos for decreasing system symmetry - art. no. 056237

      PHYSICAL REVIEW E
    19. Chang, CA; Hwang, FC; Wu, ZR; Wang, PY
      Oscillatory characteristic temperature of InAs quantum-dot laser

      IEEE PHOTONICS TECHNOLOGY LETTERS
    20. Wang, RH; Stintz, A; Varangis, PM; Newell, TC; Li, H; Malloy, KJ; Lester, LF
      Room-temperature operation of InAs quantum-dash lasers on InP (001)

      IEEE PHOTONICS TECHNOLOGY LETTERS
    21. Niu, ZC; Wang, XD; Miao, ZH; Feng, SL
      Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    22. Rerat, M; Cheng, WD; Pandey, R
      First-principles calculations of nonlinear optical susceptibility of inorganic materials

      JOURNAL OF PHYSICS-CONDENSED MATTER
    23. Wang, LG; Kratzer, P; Scheffler, M; Liu, QKK
      Island dissolution during capping layer growth interruption

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    24. Yilmazoglu, O; Brandt, M; Sigmund, J; Genc, E; Hartnagel, HL
      Integrated InAs/GaSb 3D magnetic field sensors for "the intelligent tire"

      SENSORS AND ACTUATORS A-PHYSICAL
    25. Ozasa, K; Nomura, S; Takeuchi, M; Aoyagi, Y
      Photoluminescence of InGaAs(P) dots with quasi-zero-dimensional confinement

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    26. Cirlin, GE; Polyakov, NK; Petrov, VN; Egorov, VA; Denisov, DV; Volovik, BV; Ustinov, VM; Alferov, ZI; Ledentsov, NN; Heitz, R; Bimberg, D; Zakharov, ND; Werner, P; Gosele, U
      Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    27. Suzuki, K; Miyashita, S; Hirayama, Y
      Back-gate control in an InAs-based two-dimensional system

      PHYSICA C
    28. Eroms, J; Weiss, D; De Boeck, J; Borghs, S
      Magnetotransport properties of periodic Nb-2DEG structures

      PHYSICA C
    29. Alt, HC; Egorov, AY; Riechert, H; Wiedemann, B; Meyer, JD; Michelmann, RW; Bethge, K
      Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy

      PHYSICA B
    30. Justo, JF; Antonelli, A; Fazzio, A
      The energetics of dislocation cores in semiconductors and their role on dislocation mobility

      PHYSICA B
    31. Albe, V; Lewis, LJ
      Optical properties of InAs/InP ultrathin quantum wells

      PHYSICA B
    32. Takashina, K; Nicholas, RJ; Kardynal, B; Mason, NJ; Maude, DK; Portal, JC
      Breakdown of the quantum Hall effect in an electron-hole system

      PHYSICA B
    33. Takashina, K; Nicholas, RJ; Kardynal, B; Mason, NJ; Maude, DK; Portal, JC
      Edge effects in an insulating state of an electron-hole system in magneticfield

      PHYSICA B
    34. Koche, N; Plentz, F; Rodrigues, WN; Moreira, MVB; de Oliveira, AG; Gonzales, JC
      Magnetoluminescence of InAs self-assembled dots embedded in a two-dimensional electron gas

      PHYSICA B
    35. Hales, VJ; Nicholas, RJ; Mason, NJ
      The effect of the cross-gap alignment on magneto-transport in short periodInAs/GaSb superlattices

      PHYSICA B
    36. Huang, XY; Heulings, HR; Le, V; Li, J
      Inorganic-organic hybrid composites containing MQ (II-VI) slabs: A new class of nanostructures with strong quantum confinement and periodic arrangement

      CHEMISTRY OF MATERIALS
    37. Liu, ZQ; Xie, SS; Sun, LF; Tang, DS; Zhou, WY; Wang, CY; Liu, W; Li, YB; Zou, XP; Wang, G
      Synthesis of alpha-SiO2 nanowires using Au nanoparticle catalysts on a silicon substrate

      JOURNAL OF MATERIALS RESEARCH
    38. Yang, HQ; Zhang, BL; Liu, SX; Fang, Y
      Synthesis of InAs nanocrystals embedded in SiO2 glasses by a sol-gel process

      ACTA CHIMICA SINICA
    39. Paul, SFP; Fouckhardt, H
      An improved shooting approach for solving the time-independent Schrodingerequation for III/V QW structures

      PHYSICS LETTERS A
    40. Chang, JH; Yao, TF
      ZnTe-based heterostructures for light-emitting devices at around 550 nm

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    41. Mukhametzhanov, I; Chen, ZH; Baklenov, O; Kim, ET; Madhukar, A
      Optical and photocurrent spectroscopy studies of inter- and intra-band transitions in size-tailored InAs/GaAs quantum dots

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    42. Arakawa, Y; Someya, T; Tachibana, K
      Progress in growth and physics of nitride-based quantum dots

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    43. Suzuki, K; Arakawa, Y
      Near 1.3 mu m emission at room temperature from InAsSb/GaAs self-assembledquantum dots on GaAs substrates

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    44. Hill, RJA; Itskevich, IE; Stoddart, ST; Murphy, HM; Thornton, ASG; Main, PC; Eaves, L; Henini, M; Maude, DK; Portal, JC
      High pressure as a tool to study electron localization

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    45. Vilela, MF; Anselm, KA; Sooriar, N; Johnson, JL; Lin, CH; Brown, GJ; Mahalingam, K; Saxler, A; Szmulowicz, F
      InAs/InGaSb photodetectors grown on GaAs bonded substrates

      JOURNAL OF ELECTRONIC MATERIALS
    46. Mock, P; Topuria, T; Browning, ND; Titova, L; Dobrowolska, M; Lee, S; Furdyna, JK
      Self-ordered CdSe quantum dots in ZnSe and (Zn,Mn)Se matrices assessed by transmission electron microscopy and photoluminescence spectroscopy

      JOURNAL OF ELECTRONIC MATERIALS
    47. Borgstrom, M; Bryllert, T; Gustafson, B; Johansson, J; Sass, T; Wernersson, LE; Seifert, W; Samuelson, L
      Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on InP surfaces

      JOURNAL OF ELECTRONIC MATERIALS
    48. Naveh, Y; Laikhtman, B
      Magnetotransport of coupled electron-holes

      EUROPHYSICS LETTERS
    49. Affentauschegg, C; Wieder, HH
      Properties of InAs/InAlAs heterostructures

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    50. Lukic-Zrnic, R; Stokes, DW; Littler, CL; Golding, TD
      Electrical and magnetotransport in AlxIn1-xAsySb1-y/GaSb multilayers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    51. Corbin, E; Shaw, MJ; Kitchin, MR; Hagon, JP; Jaros, M
      Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 mu m wavelength range

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    52. Bolshakova, I; Koptsev, P; Melnyk, I; Moskovets, T; Krukovsky, S; Zayachuk, D
      Control of parameters of III-V compound microcrystals and epitaxial layersby means of complex doping

      CRYSTAL RESEARCH AND TECHNOLOGY
    53. Li, HW; Wang, TH
      Memory and tunneling effects in metal-semiconductor-metal contacts

      PHYSICS OF LOW-DIMENSIONAL STRUCTURES
    54. Hecht, JD; Frost, F; Chasse, T; Hirsch, D; Neumann, H; Schindler, A; Bigl, F
      In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

      APPLIED SURFACE SCIENCE
    55. Androussi, Y; Ferre, D; Lefebvre, A
      Determination of the composition of coherently strained islands by transmission electron microscopy

      APPLIED SURFACE SCIENCE
    56. Zhang, K; Heyn, C; Hansen, W; Schmidt, T; Falta, J
      Grazing incidence structural characterization of InAs quantum dots on GaAs(001)

      APPLIED SURFACE SCIENCE
    57. Tchebotareva, AL; Brebner, JL; Roorda, S; White, CW
      Properties of InAs nanocrystals in silicon formed by sequential ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    58. Kaganer, VM; Ploog, KH
      Energies of strained vicinal surfaces and strained islands - art. no. 205301

      PHYSICAL REVIEW B
    59. Goletti, C; Arciprete, F; Almaviva, S; Chiaradia, P; Esser, N; Richter, W
      Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy - art. no. 193301

      PHYSICAL REVIEW B
    60. Biagi, R; Corradini, V; Bertoni, G; Mariani, C; del Pennino, U; Betti, MG
      Single-particle and collective excitations of a two-dimensional electron gas at the Cs/InAs(110) surface - art. no. 195407

      PHYSICAL REVIEW B
    61. Regelman, DV; Dekel, E; Gershoni, D; Ehrenfreund, E; Williamson, AJ; Shumway, J; Zunger, A; Schoenfeld, WV; Petroff, PM
      Optical spectroscopy of single quantum dots at tunable positive, neutral, and negative charge states - art. no. 165301

      PHYSICAL REVIEW B
    62. Hanada, T; Koo, BH; Totsuka, H; Yao, T
      Anisotropic shape of self-assembled InAs quantum dots: Refraction effect on spot shape of reflection high-energy electron diffraction - art. no. 165307

      PHYSICAL REVIEW B
    63. Long, F; Gill, SPA; Cocks, ACF
      Effect of surface-energy anisotropy on the kinetics of quantum dot formation - art. no. 121307

      PHYSICAL REVIEW B
    64. Heyman, JN; Neocleous, P; Hebert, D; Crowell, PA; Muller, T; Unterrainer, K
      Terahertz emission from GaAs and InAs in a magnetic field - art. no. 085202

      PHYSICAL REVIEW B
    65. Veal, TD; McConville, CF
      Profiling of electron accumulation layers in the near-surface region of InAs (110) - art. no. 085311

      PHYSICAL REVIEW B
    66. Entin, AV; Magarill, LI
      Spin-orbit interaction of electrons on a curved surface - art. no. 085330

      PHYSICAL REVIEW B
    67. Robinson, HD; Goldberg, BB; Merz, JL
      Observation of excitation transfer among neighboring quantum dots - art. no. 075308

      PHYSICAL REVIEW B
    68. Burkle, L; Fuchs, F; Ahlswede, E; Pletschen, W; Schmitz, J
      Wannier-Stark localization in InAs/(GaIn)Sb superlattice diodes - art. no.045315

      PHYSICAL REVIEW B
    69. Barvosa-Carter, W; Twigg, ME; Yang, MJ; Whitman, LJ
      Microscopic characterization of InAs/In0.28GaSb0.72/InAs/AlSb laser structure interfaces - art. no. 245311

      PHYSICAL REVIEW B
    70. Morgenstern, M; Gudmundsson, V; Dombrowski, R; Wittneven, C; Wiesendanger, R
      Nonlocality of the exchange interaction probed by scanning tunneling spectroscopy - art. no. 201301

      PHYSICAL REVIEW B
    71. Getzlaff, M; Morgenstern, M; Meyer, C; Brochier, R; Johnson, RL; Wiesendanger, R
      Nb-induced two-dimensional electron gas on n-InAs(110): Anomalous coveragedependence - art. no. 205305

      PHYSICAL REVIEW B
    72. Lee, S; Jonsson, L; Wilkins, JW; Bryant, GW; Klimeck, G
      Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions - art. no. 195318

      PHYSICAL REVIEW B
    73. Grundler, D
      Ballistic spin-filter transistor - art. no. 161307

      PHYSICAL REVIEW B
    74. Komirenko, SM; Kim, KW; Kochelap, VA; Fedorov, I; Stroscio, MA
      Generation of coherent confined LO phonons under the drift of two-dimensional electrons - art. no. 165308

      PHYSICAL REVIEW B
    75. Franceschetti, A; Zunger, A
      Exciton dissociation and interdot transport in CdSe quantum-dot molecules - art. no. 153304

      PHYSICAL REVIEW B
    76. Latham, CD; Jones, R; Oberg, S; Briddon, PR
      Density-functional calculations of carbon doping in III-V compound semiconductors - art. no. 155202

      PHYSICAL REVIEW B
    77. Shaw, MJ; Kitchin, MR; Jaros, M
      Effect of interface localization on elastic scattering in AlSb/InAs superlattice infrared detectors - art. no. 155303

      PHYSICAL REVIEW B
    78. Betti, MG; Corradini, V; Bertoni, G; Casarini, P; Mariani, C; Abramo, A
      Density of states of a two-dimensional electron gas at semiconductor surfaces - art. no. 155315

      PHYSICAL REVIEW B
    79. Biedermann, K; Chrestin, A; Matsuyama, T; Merkt, U
      ac Josephson effects in Nb/InAs/Nb junctions with integrated resonators - art. no. 144512

      PHYSICAL REVIEW B
    80. Berkovits, VL; Witkowski, N; Borensztein, Y; Paget, D
      Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations - art. no. 121314

      PHYSICAL REVIEW B
    81. Heun, S; Watanabe, Y; Ressel, B; Bottomley, D; Schmidt, T; Prince, KC
      Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001) - art. no. 125335

      PHYSICAL REVIEW B
    82. Kegel, R; Metzger, TH; Lorke, A; Peisl, J; Stangl, J; Bauer, G; Nordlund, K; Schoenfeld, WV; Petroff, PM
      Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction - art. no. 035318

      PHYSICAL REVIEW B
    83. Shan, J; Weiss, C; Wallenstein, R; Beigang, R; Heinz, TF
      Origin of magnetic field enhancement in the generation of terahertz radiation from semiconductor surfaces

      OPTICS LETTERS
    84. Itoh, M
      Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces

      PROGRESS IN SURFACE SCIENCE
    85. Joyce, PB; Krzyzewski, TJ; Steans, PH; Bell, GR; Neave, JH; Jones, TS
      Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

      SURFACE SCIENCE
    86. Giovanelli, L; Von Schenck, H; Sinner-Hettenbach, M; Papageorgiou, N; Gothelid, M; Le Lay, G
      Synchrotron radiation photoelectron spectroscopy study of Pb-Pc thin filmson InSb(100)-(4x2)/c(8x2)

      SURFACE SCIENCE
    87. Teodorescu, CM; Chevrier, F; Brochier, R; Richter, C; Heckmann, O; Ilakovac, V; De Padova, P; Hricovini, K
      X-ray magnetic circular dichroism, photoemission and RHEED studies of Fe/InAS(100) interfaces

      SURFACE SCIENCE
    88. Papageorgiou, N; Giovanelli, L; Faure, JB; Layet, JM; Gothelid, M; Le Lay, G
      Lead phthalocyanine thin films on InAs(100)-(4 x 2)/c(8 x 2) studied by synchrotron radiation photoelectron spectroscopy

      SURFACE SCIENCE
    89. Unwin, PJ; Onoufriou, D; Cox, JJ; Mulcahy, CPA; Jones, TS
      Interfacial chemistry of perylene-3,4,9,10-tetracarboxylic dianhydride during the initial stages of film growth on InAS(111)A

      SURFACE SCIENCE
    90. De Padova, P; Quaresima, C; Perfetti, P; Larciprete, R; Brochier, R; Richter, C; Ilakovac, V; Bencok, P; Teodorescu, C; Aristov, VY; Johnson, RL; Hricovini, K
      Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface

      SURFACE SCIENCE
    91. Bahng, JH; Jang, MS; Lee, M; Choi, JC; Park, HL; Kim, KJ; Lee, C
      Strain dependence and deformation potential of the E-1 and E-1+Delta(1) transitions of ZnTe grown on a GaAs (001) substrate

      SOLID STATE COMMUNICATIONS
    92. Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM
      Energy and coordinate dependent effective mass and confined electron states in quantum dots

      SOLID STATE COMMUNICATIONS
    93. Justo, JF; Antonelli, A; Fazzio, A
      Dislocation core properties in semiconductors

      SOLID STATE COMMUNICATIONS
    94. Kanisawa, K; Butcher, MJ; Tokura, Y; Yamaguchi, H; Hirayama, Y
      Local density of states in zero-dimensional semiconductor structures - art. no. 196804

      PHYSICAL REVIEW LETTERS
    95. Solomon, GS; Pelton, M; Yamamoto, Y
      Single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity

      PHYSICAL REVIEW LETTERS
    96. Kanisawa, K; Butcher, MJ; Yamaguchi, H; Hirayama, Y
      Imaging of friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111)A surfaces

      PHYSICAL REVIEW LETTERS
    97. Gao, F; Huang, CJ; Huang, DD; Li, JP; Sun, DZ; Kong, MY; Zeng, YP; Li, JM; Lin, LY
      Changing the size and shape of Ge island by chemical etching

      JOURNAL OF CRYSTAL GROWTH
    98. Wallart, X; Deresmes, D; Mollot, F
      Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

      JOURNAL OF CRYSTAL GROWTH
    99. Garcia, JM; Gonzalez, L; Gonzalez, MU; Silveira, JP; Gonzalez, Y; Briones, F
      InAs/InP(001) quantum wire formation due to anisotropic stress relaxation:in situ stress measurements

      JOURNAL OF CRYSTAL GROWTH
    100. Heyn, C; Dumat, C
      Formation and size evolution of self-assembled quantum dots

      JOURNAL OF CRYSTAL GROWTH


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Documento generato il 27/05/20 alle ore 09:18:53