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La ricerca find articoli where soggetti phrase all words 'III-V-COMPOUND' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 36 riferimenti
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    1. Kuwabara, S; Ishii, K; Haneda, S; Kondo, T; Munekata, H
      Preparation of wurtzite GaN-based magnetic alloy semiconductors by molecular beam epitaxy

      PHYSICA E
    2. Munekata, H
      Photoinduced magnetism in semiconductor-based structures

      JOURNAL OF SUPERCONDUCTIVITY
    3. Xiao, YG; Deen, MJ
      Frequency response and modeling of resonant-cavity separate absorption, charge, and multiplication avalanche photodiodes

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    4. Delage, SL
      Heterojunction bipolar transistors for millimeter waves applications: Trends and achievements

      ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS
    5. Kuwabara, S; Kondo, T; Chikyow, T; Ahmet, P; Munekata, H
      Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    6. Zivkovic, D; Zivkovic, Z; Vucinic, B
      Comparative thermodynamic analysis of the Bi-Ga0.1Sb0.9 section in the Bi-Ga-Sb system

      JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
    7. Mutamba, K; Sigurdardottir, A; Hartnagel, HL
      Concept of nanometric high density charge coupled devices

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    8. Peiner, E; Fricke, K; Behrens, I; Bakin, A; Schlachetzki, A
      Hetero-micromachining of epitaxial III/V compound semiconductors

      SENSORS AND ACTUATORS A-PHYSICAL
    9. Matsukura, F; Abe, E; Ohno, Y; Ohno, H
      Molecular beam epitaxy of GaSb with high concentration of Mn

      APPLIED SURFACE SCIENCE
    10. Yun, I; Hyun, KS
      Zinc diffusion process investigation of InP-based test structures for high-speed avalanche photodiode fabrication

      MICROELECTRONICS JOURNAL
    11. Nakamura, M; Fujioka, H; Ono, K; Takeuchi, M; Mitsui, T; Oshima, M
      Molecular dynamics simulation of III-V compound semiconductor growth with MBE

      JOURNAL OF CRYSTAL GROWTH
    12. Sotoodeh, M; Sozzi, L; Vinay, A; Khalid, AH; Hu, ZR; Rezazadeh, AA; Menozzi, R
      Stepping toward standard methods of small-signal parameter extraction for HBT's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    13. Haneda, S; Yamaura, M; Takatani, Y; Hara, K; Harigae, S; Munekata, H
      Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga, Fe)As

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    14. Li, JB; Zhang, W; Li, C; Du, Z
      Assessment of phase diagram and thermodynamic properties of the Al-Ga-Sb system

      JOURNAL OF PHASE EQUILIBRIA
    15. Munekata, H; Koshihara, S
      Carrier-induced magnetism: how and what we pursue with III-V-based magnetic semiconductor heterostructures

      SUPERLATTICES AND MICROSTRUCTURES
    16. Khalfallah, S; Dubreuil, P; Legros, R; Fontaine, C; Munoz-Yague, A; Beche, B; Porte, H
      A GaAlAs-GaAs integrated coherence modulator

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    17. Zivkovic, D; Zivkovic, Z; Sestak, J
      Predicting of the thermodynamic properties for the ternary system Ga-Sb-Bi

      CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY
    18. Ishii, A; Kawamura, T
      Monte Carlo simulation of homoepitaxial growth on two-component compound semiconductor surfaces

      SURFACE SCIENCE
    19. Khalfallah, S; Dubreuil, P; Legros, R; Fontaine, C; Munoz-Yague, A; Beche, B; Porte, H; Warno, R; Karpierz, M
      Highly unbalanced GaAlAs-GaAs integrated Mach-Zehnder interferometer for coherence modulation at 1.3 mu m

      OPTICS COMMUNICATIONS
    20. LI JB; ZHANG W; LI C; DU Z
      A THERMODYNAMIC ASSESSMENT OF THE IN-AS-SB SYSTEM

      Journal of phase equilibria
    21. MO S; PEINER E; SCHLACHETZKI A; KLOCKENBRINK R; WEBER ER
      SELECTED-AREA ELECTRON-CHANNELING PATTERN AS A CHARACTERIZATION METHOD FOR HETEROEPITAXIAL LAYERS

      Materials science & engineering. B, Solid-state materials for advanced technology
    22. Ikuta, K; Inoue, Y; Takai, O
      Optical and electrical properties of InN thin films grown on ZnO/alpha-Al2O3 by RF reactive magnetron sputtering

      THIN SOLID FILMS
    23. LIU JS; WANG JS; LIN HH
      VERY THIN-LAYERS OF TLP GROWN ON INP USING GAS-SOURCE MOLECULAR-BEAM EPITAXY

      Journal of crystal growth
    24. ASAKAWA K; YOSHIKAWA T; KOHMOTO S; NAMBU Y; SUGIMOTO Y
      CHLORINE-BASED DRY-ETCHING OF III V COMPOUND SEMICONDUCTORS FOR OPTOELECTRONIC APPLICATION/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    25. HELLOUIN Y; VIKTOROVITCH P
      IMPROVEMENT OF THE PHOTOLUMINESCENCE DEAD LAYER MODEL IN III-V SEMICONDUCTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    26. SUGIYAMA M; KUSUNOKI K; SHIMOGAKI Y; SUDO S; NAKANO Y; NAGAMOTO H; SUGAWARA K; TADA K; KOMIYAMA H
      KINETIC-STUDIES ON THERMAL-DECOMPOSITION OF MOVPE SOURCES USING FOURIER-TRANSFORM INFRARED-SPECTROSCOPY

      Applied surface science
    27. SHEKHAR R; JENSEN KF
      TEMPERATURE-PROGRAMMED DESORPTION INVESTIGATIONS OF HYDROGEN AND AMMONIA REACTIONS ON GAN

      Surface science
    28. FRANZ G
      HYDROGEN IN DRY-ETCHING PROCESSES

      Physica status solidi. a, Applied research
    29. YAMAGUCHI M
      PRESENT STATUS AND FUTURE-PROSPECTS OF SUPER HIGH-EFFICIENCY III-V COMPOUND SOLAR-CELLS

      Renewable energy
    30. YAMAGUCHI K; ITAGAKI K; CHANG YA
      THERMODYNAMIC ANALYSIS OF THE IN-P, GA-AS, IN-AS AND AL-SB SYSTEMS

      Calphad
    31. YAMAGUCHI K; CHIBA Y; YOSHIZAWA M; KAMEDA K
      LOW-TEMPERATURE SPECIFIC-HEAT OF GAP, INP , GAAS AND INAS COMPOUNDS

      Nippon Kinzoku Gakkaishi
    32. TOTOKI M; MIZUMOTO T; NAKAMURA T; MARU K; SATO Y; NAITO Y
      THE EFFECT OF TOTAL REACTOR PRESSURE ON GAINSB GROWN ON GD3GA5O12 SUBSTRATE BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    33. TOTOKI M; MIZUMOTO T; NAKAMURA T; MARU K; NAITO Y
      DIRECT BONDING BETWEEN INP AND GD3GA5O12 FOR INTEGRATING SEMICONDUCTOR AND MAGNETOOPTIC DEVICES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. JOYCE BA; ZHANG XM; NEAVE JH; FAWCETT PN; FAHY MR; SATO K; KAMIYA I
      REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) INTENSITY OSCILLATIONS - GROWTH MODES AND GROWTH-RATES - A CRITIQUE

      Scanning microscopy
    35. VERNON SM; SANFACON MM; AHRENKIEL RK
      GROWTH OF (GAAS)1-X(GE2)X BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

      Journal of electronic materials
    36. KONDOW M; UOMI K; HOSOMI K; MOZUME T
      GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/08/20 alle ore 22:27:29