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La ricerca find articoli where soggetti phrase all words 'III-V NITRIDES' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 84 riferimenti
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    1. Cumberland, RW; Blair, RG; Wallace, CH; Reynolds, TK; Kaner, RB
      Thermal control of metathesis reactions producing GaN and InN

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. da Silva, AF; Araujo, CM; Sernelius, BE; Persson, C; Ahuja, R; Johansson, B
      Influence of Si doping on optical properties of wurtzite GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    3. Wetzel, C; Amano, T; Akasaki, I; Ager, JW; Grzegory, I; Meyer, BK
      DX-like behavior of oxygen in GaN

      PHYSICA B
    4. Tripathy, S; Ramam, A; Chua, SJ; Pan, JS; Huan, A
      Characterization of inductively coupled plasma etched surface of GaN usingCl-2/BCl3 chemistry

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    5. Lewis, JP; Glaesemann, KR; Voth, GA; Fritsch, J; Demkov, AA; Ortega, J; Sankey, OF
      Further developments in the local-orbital density-functional-theory tight-binding method - art. no. 195103

      PHYSICAL REVIEW B
    6. Zoroddu, A; Bernardini, F; Ruggerone, P; Fiorentini, V
      First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory - art. no. 045208

      PHYSICAL REVIEW B
    7. Stampfl, C; Mannstadt, W; Asahi, R; Freeman, AJ
      Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations - art. no. 155106

      PHYSICAL REVIEW B
    8. Limpijumnong, S; Lambrecht, WRL
      Theoretical study of the relative stability of wurtzite and rocksalt phases in MgO and GaN - art. no. 104103

      PHYSICAL REVIEW B
    9. Grosse, F; Neugebauer, J
      Limits and accuracy of valence force field models for InxGa1-xN alloys - art. no. 085207

      PHYSICAL REVIEW B
    10. Li, T; Carrano, JC; Eiting, CJ; Grudowski, PA; Lambert, DJH; Kwon, HK; Dupuis, RD; Campbell, JC
      Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector

      FIBER AND INTEGRATED OPTICS
    11. Matoussi, A; Boufaden, T; Missaoui, A; Guermazi, S; Bessais, B; Mlik, Y; El Jani, B
      Porous silicon as an intermediate buffer layer for GaN growth on (100) Si

      MICROELECTRONICS JOURNAL
    12. Lee, JM; Kim, SW; Park, SJ
      Dry etching of GaN/InGaN multiquantum wells using inductively coupled Cl2OCH4OH2/Ar plasma

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    13. Lepkowski, SP; Teisseyre, H; Suski, T; Perlin, P; Grandjean, N; Massies, J
      Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

      APPLIED PHYSICS LETTERS
    14. Lee, KJ; Harris, JJ; Kent, AJ; Wang, T; Sakai, S; Maude, DK; Portal, JC
      Investigation of phonon emission processes in an AlGaN/GaN heterostructureat low temperatures

      APPLIED PHYSICS LETTERS
    15. Daudin, B; Feuillet, G; Mariette, H; Mula, G; Pelekanos, N; Molva, E; Rouviere, JL; Adelmann, C; Martinez-Guerrero, E; Barjon, J; Chabuel, F; Bataillou, B; Simon, J
      Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. Chang, LB; Liu, SS; Jeng, MJ
      Etching selectivity and surface profile of GaN in the Ni, SiO2 and photoresist masks using an inductively coupled plasma

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    17. Damilano, B; Grandjean, N; Pernot, C; Massies, J
      Monolithic white light emitting diodes based on InGaN/GaN multiple-quantumwells

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    18. Bouarissa, N
      Composition dependence of positron states in zincblende Ga1-xInxN

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    19. Boguslawski, P; Rapcewicz, K; Bernholc, JJ
      Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems

      PHYSICAL REVIEW B
    20. Ronning, C; Hofsass, H; Stotzler, A; Deicher, M; Carlson, EP; Hartlieb, PJ; Gehrke, T; Rajagopal, P; Davis, RF
      Photoluminescence characterization of Mg implanted GaN

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    21. Daudin, B; Feuillet, G; Mula, G; Mariette, H; Rouviere, JL; Pelekanos, N; Fishman, G; Adelmann, C; Simon, J
      Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode

      DIAMOND AND RELATED MATERIALS
    22. Smith, SA; Lampert, WV; Rajagopal, P; Banks, AD; Thomson, D; Davis, RF
      Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    23. Lee, JM; Chang, KM; Park, SJ; Jang, HK
      Inductively coupled Cl-2/Ar/O-2 plasma etching of GaN, InGaN, and AlGaN

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    24. Mora-Ramos, ME; Gaggero-Sager, LM
      Electronic states of GaN-based heterostructures in a Thomas-Fermi approximation

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    25. Bernardini, F; Fiorentini, V
      Polarization fields in nitride nanostructures: 10 points to think about

      APPLIED SURFACE SCIENCE
    26. Kassali, K; Bouarissa, N
      Effect of nitrogen concentration on electronic energy bands of Ga1-xInxNyAs1-y alloys

      MICROELECTRONIC ENGINEERING
    27. Asbeck, PM; Yu, ET; Lau, SS; Sun, W; Dang, X; Shi, C
      Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaNHBTs

      SOLID-STATE ELECTRONICS
    28. Abu-Jafar, M; Al-Sharif, AI; Qteish, A
      FP-LAPW and pseudopotential calculations of the structural phase transformations of GaN under high-pressure

      SOLID STATE COMMUNICATIONS
    29. Ng, HM; Gmachl, C; Chu, SNG; Cho, AY
      Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 mu m intersubband transitions

      JOURNAL OF CRYSTAL GROWTH
    30. Zhang, HX; Ye, ZZ; Zhao, BH
      Investigation of preparation and properties of epitaxial growth GaN film on Si(111) substrate

      JOURNAL OF CRYSTAL GROWTH
    31. Miller, EJ; Dang, XZ; Yu, ET
      Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

      JOURNAL OF APPLIED PHYSICS
    32. Ambacher, O; Foutz, B; Smart, J; Shealy, JR; Weimann, NG; Chu, K; Murphy, M; Sierakowski, AJ; Schaff, WJ; Eastman, LF; Dimitrov, R; Mitchell, A; Stutzmann, M
      Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

      JOURNAL OF APPLIED PHYSICS
    33. Pomarico, A; Lomascolo, M; Passaseo, A; Cingolani, R; Berti, M; Napolitani, E; Natali, M; Sinha, SK; Drigo, AV
      Broad-area optical characterization of well-width homogeneity in GaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers

      APPLIED PHYSICS LETTERS
    34. Karrer, U; Ambacher, O; Stutzmann, M
      Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

      APPLIED PHYSICS LETTERS
    35. McCartney, MR; Ponce, FA; Cai, J; Bour, DP
      Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

      APPLIED PHYSICS LETTERS
    36. Imanaga, S; Kawai, H
      Performance of AlN/GaN heterostructure metal insulator semiconductor fieldeffect transistor based on two-dimensional Monte Carlo simulation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    37. Zandler, G; Majewski, JA; Vogl, P
      Pyroelectronics: Novel device concepts based on nitride interfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    38. Rizzi, A; Lantier, R; Monti, F; Luth, H; Della Sala, F; Di Carlo, A; Lugli, P
      AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    39. Wallace, CH; Reynolds, TK; Kaner, RB
      Rapid synthesis of crystalline gallium nitride from solid precursors at atmospheric pressure

      CHEMISTRY OF MATERIALS
    40. Vispute, RD; Choopun, S; Enck, R; Patel, A; Talyansky, V; Sharma, RP; Venkatesan, T; Sarney, WL; Salamanca-Riba, L; Andronescu, SN; Iliadis, AA; Jones, KA
      Pulsed laser deposition and processing of wide band gap semiconductors andrelated materials

      JOURNAL OF ELECTRONIC MATERIALS
    41. Eddy, CR; Molnar, B
      Plasma etch-induced conduction changes in gallium nitride

      JOURNAL OF ELECTRONIC MATERIALS
    42. Krukowski, S
      Growth of GaN single crystals under high nitrogen pressures and their characterization

      CRYSTAL RESEARCH AND TECHNOLOGY
    43. Perlin, P; Suski, T; Ager, JW; Conti, G; Polian, A; Christensen, NE; Gorczyca, I; Grzegory, I; Weber, ER; Haller, EE
      Transverse effective charge and its pressure dependence in GaN single crystals

      PHYSICAL REVIEW B-CONDENSED MATTER
    44. Wethkamp, T; Wilmers, K; Cobet, C; Esser, N; Richter, W; Ambacher, O; Stutzmann, M; Cardona, M
      Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range

      PHYSICAL REVIEW B-CONDENSED MATTER
    45. Gil, B; Lefebvre, P; Allegre, J; Mathieu, H; Grandjean, N; Leroux, M; Massies, J; Bigenwald, P; Christol, P
      Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells

      PHYSICAL REVIEW B-CONDENSED MATTER
    46. Kim, HS; Yeom, GY; Lee, JW; Kim, TI
      A study of GaN etch mechanisms using inductively coupled Cl-2/Ar plasmas

      THIN SOLID FILMS
    47. Garrido, JA; Jimenez, A; Sanchez-Rojas, JL; Munoz, E; Omnes, F; Gibart, P
      Polarization field determination in AlGaN/GaN HFETs

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    48. Ryan, ME; Camacho, AC; Bhardwaj, JK
      High etch rate gallium nitride processing using an inductively coupled plasma source

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    49. Massies, J; Grandjean, N
      Real-time control of the molecular beam epitaxy of nitrides

      JOURNAL OF CRYSTAL GROWTH
    50. Fareed, RSQ; Tottori, S; Nishino, K; Sakai, S
      Surface morphology studies on sublimation grown GaN by atomic force microscopy

      JOURNAL OF CRYSTAL GROWTH
    51. Grandjean, N; Damilano, B; Dalmasso, S; Leroux, M; Laugt, M; Massies, J
      Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

      JOURNAL OF APPLIED PHYSICS
    52. Pearton, SJ; Zolper, JC; Shul, RJ; Ren, F
      GaN: Processing, defects, and devices

      JOURNAL OF APPLIED PHYSICS
    53. Sheu, JK; Su, YK; Chi, GC; Jou, MJ; Liu, CC; Chang, CM; Hung, WC
      Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases

      JOURNAL OF APPLIED PHYSICS
    54. Pearton, SJ; Cho, H; LaRoche, JR; Ren, F; Wilson, RG; Lee, JW
      Oxygen diffusion into SiO2-capped GaN during annealing

      APPLIED PHYSICS LETTERS
    55. Garrido, JA; Sanchez-Rojas, JL; Jimenez, A; Munoz, E; Omnes, F; Gibart, P
      Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis

      APPLIED PHYSICS LETTERS
    56. Basak, D; Yamashita, K; Sugahara, T; Fareed, Q; Nakagawa, D; Nishino, K; Sakai, S
      Reactive ion etching of GaN and AlxGa1-xN using Cl-2/CH4/Ar plasma

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    57. Fukui, K; Hirai, R; Yamamoto, A; Naoe, S; Tanaki, S
      Soft X-ray absorption study of III-V nitrides

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    58. PENG LH; CHUANG CW; HSU YC; HO JK; HUANG CN; CHEN CY
      HYDRATION EFFECTS IN THE PHOTOASSISTED WET CHEMICAL ETCHING OF GALLIUM NITRIDE

      IEEE journal of selected topics in quantum electronics
    59. DUDESEK P; BENCO L; DAUL C; SCHWARZ K
      D-TO-S BONDING IN GAN

      Journal of physics. Condensed matter
    60. DWILINSKI R; DORADZINSKI R; GARCZYNSKI J; SIERZPUTOWSKI L; BARANOWSKI JM; KAMINSKA M
      AMMONO METHOD OF GAN AND ALN PRODUCTION

      DIAMOND AND RELATED MATERIALS
    61. ZAOUI A; CERTIER M; FERHAT M; PAGES O; AOURAG H
      LATTICE AND ELECTRONIC-STRUCTURE PROPERTIES OF (ALN)(X)(SIC)(1-X) SEMICONDUCTING ALLOY

      Physica status solidi. b, Basic research
    62. CHO H; VARTULI CB; DONOVAN SM; MACKENZIE JD; ABERNATHY CR; PEARTON SJ; SHUL RJ; CONSTANTINE C
      LOW-BIAS DRY-ETCHING OF III-NITRIDES IN CL-2-BASED INDUCTIVELY-COUPLED PLASMAS

      Journal of electronic materials
    63. KRUKOWSKI S; WITEK A; ADAMCZYK J; JUN J; BOCKOWSKI M; GRZEGORY I; LUCZNIK B; NOWAK G; WROBLEWSKI M; PRESZ A; GIERLOTKA S; STELMACH S; PALOSZ B; POROWSKI S; ZINN P
      THERMAL-PROPERTIES OF INDIUM NITRIDE

      Journal of physics and chemistry of solids
    64. MONEMAR B
      BASIC III-V NITRIDE RESEARCH - PAST, PRESENT AND FUTURE

      Journal of crystal growth
    65. di Forte-Poisson, MA; Huet, F; Romann, A; Tordjman, M; Lancefield, D; Pereira, E; Di Persio, J; Pecz, B
      Relationship between physical properties and gas purification in GaN grownby metalorganic vapor phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    66. KOLESKE DD; WICKENDEN AE; HENRY RL; DESISTO WJ; GORMAN RJ
      GROWTH-MODEL FOR GAN WITH COMPARISON TO STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES

      Journal of applied physics
    67. YEO YC; CHONG TC; LI MF
      ELECTRONIC BAND STRUCTURES AND EFFECTIVE-MASS PARAMETERS OF WURTZITE GAN AND INN

      Journal of applied physics
    68. Shimada, K; Sota, T; Suzuki, K
      First-principles study on electronic and elastic properties of BN, AlN, and GaN

      JOURNAL OF APPLIED PHYSICS
    69. PERLIN P; KISIELOWSKI C; IOTA V; WEINSTEIN BA; MATTOS L; SHAPIRO NA; KRUGER J; WEBER ER; YANG JW
      INGAN GAN QUANTUM-WELLS STUDIED BY HIGH-PRESSURE, VARIABLE-TEMPERATURE, AND EXCITATION POWER SPECTROSCOPY/

      Applied physics letters
    70. KRUKOWSKI S
      THERMODYNAMICS AND HIGH-PRESSURE GROWTH OF (AL, GA, IN)N SINGLE-CRYSTALS

      DIAMOND AND RELATED MATERIALS
    71. AGUIR K; LOLLMAN DBB; CARCHANO H
      THE EVOLUTION OF A-GAAS1-XNX C-GAAS INTERFACE STATES AS A FUNCTION OFAR-NH3 PLASMA/

      Materials science & engineering. B, Solid-state materials for advanced technology
    72. DESSENNE F; CICHOCKA D; DESPLANQUES P; FAUQUEMBERGUE R
      COMPARISON OF WURTZITE AND ZINC BLENDE III-V NITRIDES FIELD-EFFECT TRANSISTORS - A 2D MONTE-CARLO DEVICE SIMULATION

      Materials science & engineering. B, Solid-state materials for advanced technology
    73. POROWSKI S
      GROWTH AND PROPERTIES OF SINGLE-CRYSTALLINE GAN SUBSTRATES AND HOMOEPITAXIAL LAYERS

      Materials science & engineering. B, Solid-state materials for advanced technology
    74. GRANDJEAN N; MASSIES J; MARTINEZ Y; VENNEGUES P; LEROUX M; LAUGT M
      GAN EPITAXIAL-GROWTH ON SAPPHIRE(0001) - THE ROLE OF THE SUBSTRATE NITRIDATION

      Journal of crystal growth
    75. VENNEGUES P; BEAUMONT B; VAILLE M; GIBART P
      MICROSTRUCTURE OF GAN EPITAXIAL-FILMS AT DIFFERENT STAGES OF THE GROWTH-PROCESS ON SAPPHIRE(0001)

      Journal of crystal growth
    76. SMITH SA; WOLDEN CA; BREMSER MD; HANSER AD; DAVIS RF; LAMPERT WV
      HIGH-RATE AND SELECTIVE ETCHING OF GAN, ALGAN, AND ALN USING AN INDUCTIVELY-COUPLED PLASMA

      Applied physics letters
    77. KOUKITU A; SEKI H
      THERMODYNAMIC ANALYSIS ON MOLECULAR-BEAM EPITAXY OF GAN, INN AND ALN

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    78. NIWA A; OHTOSHI T; KURODA T
      THEORETICAL-ANALYSIS OF THE THRESHOLD CURRENT-DENSITY IN GAN ALGAN STRAINED-QUANTUM-WELL LASERS WITH A MODULATION-DOPED STRUCTURE/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    79. PEARTON SJ; ABERNATHY CR; REN F; SHUL RJ; KILCOYNE SP; HAGEROTTCRAWFORD M; ZOLPER JC; WILSON RG; SCHWARTZ RG; ZAVADA JM
      PROCESS-DEVELOPMENT FOR III-V NITRIDES

      Materials science & engineering. B, Solid-state materials for advanced technology
    80. ZOLPER JC; CRAWFORD MH; PEARTON SJ; ABERNATHY CR; VARTULI CB; YUAN C; STALL RA
      ION-IMPLANTATION AND RAPID THERMAL-PROCESSING OF III-V NITRIDES

      Journal of electronic materials
    81. PEARTON SJ; SHUL RJ; WILSON RG; REN F; ZAVADA JM; ABERNATHY CR; VARTULI CB; LEE JW; MILEHAM JR; MACKENZIE JD
      THE INCORPORATION OF HYDROGEN INTO III-V NITRIDES DURING PROCESSING

      Journal of electronic materials
    82. KOUKITU A; TAKAHASHI N; TAKI T; SEKI H
      THERMODYNAMIC ANALYSIS OF INXGA1-XN ALLOY COMPOSITION GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    83. PEARTON SJ; VARTULI CB; SHUL RJ; ZOLPER JC
      DRY-ETCHING AND IMPLANTATION CHARACTERISTICS OF III-N ALLOYS

      Materials science & engineering. B, Solid-state materials for advanced technology
    84. KUGA Y; SHIRAI T; HARUYAMA M; KAWANISHI H; SUEMATSU Y
      VIOLET AND NEAR-UV LIGHT-EMISSION FROM GAN AL0.08GA0.92N INJECTION DIODE GROWN ON (0001)6H-SIC SUBSTRATE BY LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


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Documento generato il 30/10/20 alle ore 13:01:35