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La ricerca find articoli where soggetti phrase all words 'HOMOEPITAXY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 262 riferimenti
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    1. Tomellini, M; Fanfoni, M
      Rate equation approach to film growth

      CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
    2. Ghaisas, SV
      (2+1)-dimensional stochastic growth model and its application to some experimental observations - art. no. 062601

      PHYSICAL REVIEW E
    3. Oberbeck, L; Schmidt, J; Wagner, TA; Bergmann, RB
      High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

      PROGRESS IN PHOTOVOLTAICS
    4. Costantini, G; Rusponi, S; de Mongeot, FB; Boragno, C; Valbusa, U
      Periodic structures induced by normal-incidence sputtering on Ag(110) and Ag(001): flux and temperature dependence

      JOURNAL OF PHYSICS-CONDENSED MATTER
    5. Schmid, M; Lundgren, E; Leonardelli, G; Hammerschmid, A; Stanka, B; Varga, P
      Exchange processes in interlayer diffusion - kinks, corners and the growthmode

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    6. Takami, T; Mine, T; Kusunoki, I; Nishitani-Gamo, M; Ando, T
      Unusual RHEED patterns of a homoepitaxial diamond (001) surface explained by surface tilt

      DIAMOND AND RELATED MATERIALS
    7. Uzan-Saguy, C; Reznik, A; Cytermann, C; Brener, R; Kalish, R; Bustarret, E; Bernard, M; Deneuville, A; Gheeraert, E; Chevallier, J
      Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B accepters

      DIAMOND AND RELATED MATERIALS
    8. Grzegory, I
      High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN - based structures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    9. Palasantzas, G; De Hosson, JTM
      Influence of quasi-layer-by-layer roughness on proximity effects in thin film superconducting/normal-metal junctions

      PHYSICA C
    10. Hsu, H; Wang, YL
      Electron diffraction profile and size distribution of islands on a surface

      CHINESE JOURNAL OF PHYSICS
    11. Fan, W; Markworth, PR; Marks, TJ; Chang, RPH
      Growth of atomically flat homoepitaxial magnesium oxide thin films by metal-organic chemical vapor deposition

      MATERIALS CHEMISTRY AND PHYSICS
    12. Kahng, SJ; Choi, BY; Kuk, Y
      Sputter-erosion dynamics of Ni(110) surface

      APPLIED SURFACE SCIENCE
    13. Pimpinelli, A; Videcoq, A; Vladimirova, M
      Kinetic surface patterning in two-particle models of epitaxial growth

      APPLIED SURFACE SCIENCE
    14. Videcoq, A; Vladimirova, M; Pimpinelli, A
      Kinetic surface structuring during homoepitaxy of GaAs(110): a model study

      APPLIED SURFACE SCIENCE
    15. Nishio, M; Hayashida, K; Harada, H; Mitsuishi, Y; Guo, QX; Ogawa, H
      Photo luminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    16. Kim, HM; Oh, JE; Kang, TW
      Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method

      MATERIALS LETTERS
    17. Popescu, MN; Amar, JG; Family, F
      Rate-equation approach to island size distributions and capture numbers insubmonolayer irreversible growth - art. no. 205404

      PHYSICAL REVIEW B
    18. Chatraphorn, PP; Toroczkai, Z; Das Sarma, S
      Epitaxial mounding in limited-mobility models of surface growth - art. no.205407

      PHYSICAL REVIEW B
    19. Maroutian, T; Douillard, L; Ernst, HJ
      Morphological instability of Cu vicinal surfaces during step-flow growth -art. no. 165401

      PHYSICAL REVIEW B
    20. Botez, CE; Elliott, WC; Miceli, PF; Stephens, PW
      Thermal expansion of the Ag(111) surface measured by x-ray scattering - art. no. 113404

      PHYSICAL REVIEW B
    21. Myslivecek, J; Sobotik, P; Ost'adal, I; Jarolimek, T; Smilauer, P
      Unconventional features of Ag epitaxy on the Si(111)7x7 surface - art. no.045403

      PHYSICAL REVIEW B
    22. Beben, J; Hwang, IS; Chang, TC; Tsong, TT
      Model for surfactant-mediated growth of Ge on Pb-covered Si(111) surfaces - art. no. 033304

      PHYSICAL REVIEW B
    23. Heyn, C
      Anisotropic island growth during submonolayer epitaxy - art. no. 033403

      PHYSICAL REVIEW B
    24. Itoh, M
      Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces

      PROGRESS IN SURFACE SCIENCE
    25. Gierer, M; Iglesias, A; Moritz, W
      Determination of domain size distributions from LEED beam profiles: an optimization scheme based on the maximum entropy method

      SURFACE SCIENCE
    26. Esser, M; Wormeester, H; Poelsema, B
      Breakdown of the simple kinematic approximation models in high-resolution LEED characterization of the initial growth of Si/Si(111)

      SURFACE SCIENCE
    27. Gerlach, R; Maroutian, T; Douillard, L; Martinotti, D; Ernst, HJ
      A novel method to determine the Ehrlich-Schwoebel barrier

      SURFACE SCIENCE
    28. Layson, AR; Thiel, PA
      Testing realistic environments for metal film growth and aging: chemical insights into the effect of oxygen on Ag/Ag(100)

      SURFACE SCIENCE
    29. van Dijken, S; de Bruin, D; Poelsema, B
      Kinetic physical etching for versatile novel design of well ordered self-affine nanogrooves

      PHYSICAL REVIEW LETTERS
    30. Michely, T; Kalff, M; Comsa, G; Strobel, M; Heinig, KH
      Step edge diffusion and step atom detachment in surface evolution: Ion-erosion of Pt(111)

      PHYSICAL REVIEW LETTERS
    31. Ballestad, A; Ruck, BJ; Adamcyk, M; Pinnington, T; Tiedje, T
      Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films

      PHYSICAL REVIEW LETTERS
    32. Kirilyuk, V; Zauner, ARA; Christianen, PCM; Weyher, JL; Hageman, PR; Larsen, PK
      Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates

      JOURNAL OF CRYSTAL GROWTH
    33. Williams, RS; Ashwin, MJ; Neave, JH; Jones, TS
      Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(001) substrates

      JOURNAL OF CRYSTAL GROWTH
    34. Wenisch, H; Kirchner, V; Hong, SK; Chen, YF; Ko, HJ; Yao, T
      Evaluation of ZnO substrates for homoepitaxy

      JOURNAL OF CRYSTAL GROWTH
    35. McGinnis, AJ; Thomson, D; Davis, RF; Chen, E; Michel, A; Lamb, HH
      In situ cleaning of GaN/6H-SiC substrates in NH3

      JOURNAL OF CRYSTAL GROWTH
    36. Pritchard, RE; Oulton, RF; Stavrinou, PN; Parry, G; Williams, RS; Ashwin, MJ; Neave, JH; Jones, TS
      Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates

      JOURNAL OF APPLIED PHYSICS
    37. Palasantzas, G; De Hosson, JTM
      Mound surface roughness effects on the thermal capacitance of thin films

      JOURNAL OF APPLIED PHYSICS
    38. Apostolopoulos, G; Boukos, N; Travlos, A; Herfort, J; Ploog, KH
      Extending the epitaxial thickness limit in low-substrate-temperature-grownGaAs

      APPLIED PHYSICS LETTERS
    39. Fanfoni, M; Tomellini, M; Volpe, M
      How the nonrandom distribution of nuclei affects the island density in thin-film growth

      APPLIED PHYSICS LETTERS
    40. Dubon, OD; Evans, PG; Chervinsky, JF; Aziz, MJ; Spaepen, F; Golovchenko, JA; Chisholm, MF; Muller, DA
      Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pbmonolayer

      APPLIED PHYSICS LETTERS
    41. Usagawa, T; Yao, X; Koyama, S; Tanabe, K; Izumi, T; Shiohara, Y
      (110) NdBa2CU3O7-delta and YBa2CU3O7-delta films grown on (110) NdBa2Cu3O7-delta single crystal substrates by 90 degrees off-axis RF magnetron sputtering methods

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    42. Ogata, K; Kawanishi, T; Maejima, K; Sakurai, K; Fujita, S; Fujita, S
      Improvements of ZnO qualities grown by metal-organic vapor phase epitaxy using a molecular beam epitaxy grown ZnO layer as a substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    43. Sakai, S
      Homoepitaxial and heteroepitaxial growth of InGaN/GaN

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    44. Thiel, PA; Evans, JW
      Nucleation, growth, and relaxation of thin Films: Metal(100) homoepitaxialsystems

      JOURNAL OF PHYSICAL CHEMISTRY B
    45. Haug, K; Jenkins, T
      Effects of hydrogen on the three-dimensional epitaxial growth of Ni(100), (110), and (111)

      JOURNAL OF PHYSICAL CHEMISTRY B
    46. Krug, J
      Scaling regimes for second layer nucleation

      EUROPEAN PHYSICAL JOURNAL B
    47. Schinzer, S; Kohler, S; Reents, G
      Ehrlich-Schwoebel barrier controlled slope selection in epitaxial growth

      EUROPEAN PHYSICAL JOURNAL B
    48. Takami, T; Suzuki, K; Mine, T; Kusunoki, I; Nishitani-Gamo, M; Ando, T
      RHEED and STM study of a homoepitaxial diamond (001) thin film produced bymicrowave plasma CVD

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    49. Di Cioccio, L; Neyret, E
      Homoepitaxy of silicon carbide

      VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
    50. Hwang, ES; Lee, J
      Surfactant-assisted metallorganic CVD of (111)-oriented copper films with excellent surface smoothness

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    51. Cadilhe, AM; Stoldt, CR; Jenks, CJ; Thiel, PA; Evans, JW
      Evolution of far-from-equilibrium nanostructures on Ag(100) surfaces: Protrusions and indentations at extended step edges

      PHYSICAL REVIEW B
    52. Bell, GR; Krzyzewski, TJ; Joyce, PB; Jones, TS
      Island size scaling for submonolayer growth of InAs on GaAs(001)-(2X4): Strain and surface reconstruction effects

      PHYSICAL REVIEW B
    53. Ratsch, C; Gyure, MF; Chen, S; Kang, M; Vvedensky, DD
      Fluctuations and scaling in aggregation phenomena

      PHYSICAL REVIEW B
    54. Moldovan, D; Golubovic, L
      Interfacial coarsening dynamics in epitaxial growth with slope selection

      PHYSICAL REVIEW E
    55. Mazzone, AM
      Bonding in heteroepitaxial metallic islands. Semi-empirical calculations

      MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
    56. Petsos, G; Vargiamidis, V
      Stochastic nucleation and growth of islands on surfaces with the theory ofnon-classical nucleation

      COMPUTATIONAL MATERIALS SCIENCE
    57. de Theije, FK; Schermer, JJ; van Enckevort, WJP
      Effects of nitrogen impurities on the CVD growth of diamond: step bunchingin theory and experiment

      DIAMOND AND RELATED MATERIALS
    58. Takeuchi, D; Watanabe, H; Yamanaka, S; Okushi, H; Kajimura, K
      Homoepitaxial diamond films grown by step-flow mode in various misorientation angles of diamond substrates

      DIAMOND AND RELATED MATERIALS
    59. Pruvost, F; Bustarret, E; Deneuville, A
      Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra

      DIAMOND AND RELATED MATERIALS
    60. Inushima, T; Matsushita, T; Ohya, S; Shiomi, H
      Hopping conduction via the excited states of boron in p-type diamond

      DIAMOND AND RELATED MATERIALS
    61. Ballutaud, D; Jomard, F; Le Duigou, J; Theys, B; Chevallier, J; Deneuville, A; Pruvost, F
      Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films

      DIAMOND AND RELATED MATERIALS
    62. Sugahara, T; Sakai, S
      Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates

      IEICE TRANSACTIONS ON ELECTRONICS
    63. Zverev, AV; Neizvestny, IG; Shwartz, NL; Yanovitskaya, ZS
      Epitaxy and annealing processes simulation of porous Si(111) surface

      IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
    64. Eliseev, PG; Osinski, M; Lee, JY; Sugahara, T; Sakai, S
      Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire

      JOURNAL OF ELECTRONIC MATERIALS
    65. Takahashi, T; Kawamukai, T
      Phase detection of electrostatic force by AFM with a conductive tip

      ULTRAMICROSCOPY
    66. Xu, MC; Qian, HJ; Liu, FQ; Krash, I; Lai, WY; Wu, SC
      Pb surfactant-assisted Co film growth on Cu(111)

      CHINESE PHYSICS LETTERS
    67. Zhuang, GC; Wang, JF; Wang, W
      Scaling laws of reversible aggregation in compact cluster systems

      INTERNATIONAL JOURNAL OF MODERN PHYSICS B
    68. Neizvestny, IG; Shwartz, NL; Yanovitskaja, ZS
      2D island system formation during initial stage of MBE growth with large critical island size

      PHYSICS OF LOW-DIMENSIONAL STRUCTURES
    69. Koponen, IT
      Modeling layer-by-layer growth in ion beam assisted deposition of thin films

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    70. Kotrla, M; Krug, J; Smilauer, P
      Submonolayer epitaxy with impurities: Kinetic Monte Carlo simulations and rate-equation analysis

      PHYSICAL REVIEW B
    71. Pfandzelter, R; Igel, T; Winter, H
      Real-time study of nucleation, growth, and ripening during Fe/Fe(100) homoepitaxy using ion scattering

      PHYSICAL REVIEW B
    72. Itoh, M; Ohno, T
      Absence of a step-edge barrier on a polar semiconductor surface with reconstruction

      PHYSICAL REVIEW B
    73. Prieto, JE; de la Figuera, J; Miranda, R
      Surface energetics in a heteroepitaxial model system: Co/Cu(111)

      PHYSICAL REVIEW B
    74. Vvedensky, DD
      Scaling functions for island-size distributions

      PHYSICAL REVIEW B
    75. Furman, I; Biham, O; Zuo, JK; Swan, AK; Wendelken, JF
      Epitaxial growth of Cu on Cu(001): Experiments and simulations

      PHYSICAL REVIEW B
    76. Karr, BW; Cahill, DG; Petrov, I; Greene, JE
      Effects of high-flux low-energy ion bombardment on the low-temperature growth morphology of TiN(001) epitaxial layers

      PHYSICAL REVIEW B
    77. Coluci, VR; Cotta, MA
      Influence of rough substrates on the morphology evolution of epitaxial films

      PHYSICAL REVIEW B
    78. Krug, J; Politi, P; Michely, T
      Island nucleation in the presence of step-edge barriers: Theory and applications

      PHYSICAL REVIEW B
    79. van Dijken, S; Jorritsma, LC; Poelsema, B
      Grazing-incidence metal deposition: Pattern formation and slope selection

      PHYSICAL REVIEW B
    80. Degroote, B; Pattyn, H; Degroote, S; Vantomme, A; Dekoster, J; Langouche, G
      Diffusion-induced step decoration of Co on Ag(001)

      THIN SOLID FILMS
    81. Jernigan, GG; Thompson, PE
      Effect of the co-deposition of Sb and Si on surface morphology

      THIN SOLID FILMS
    82. Jeong, JK; Na, HJ; Kim, BS; Um, MY; Kim, HJ
      Morphological and structural characteristics of homoepitaxial 4H-SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor

      THIN SOLID FILMS
    83. Kim, JH; Weiss, AH
      The effect of adsorbed atomic hydrogen on the growth of ultrathin silicon films on Ge(100) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)

      SURFACE SCIENCE
    84. Das Sarma, S; Punyindu, P; Toroczkai, Z
      Non-universal mound formation in non-equilibrium surface growth

      SURFACE SCIENCE
    85. Stoldt, CR; Caspersen, KJ; Bartelt, MC; Jenks, CJ; Evans, JW; Thiel, PA
      Using temperature to tune film roughness: Nonintuitive behavior in a simple system

      PHYSICAL REVIEW LETTERS
    86. Bracker, AS; Yang, MJ; Bennett, BR; Culbertson, JC; Moore, WJ
      Surface reconstruction phase diagrams for InAs, AlSb, and GaSb

      JOURNAL OF CRYSTAL GROWTH
    87. Frayssinet, E; Knap, W; Prystawko, P; Leszczynski, M; Grzegory, I; Suski, T; Beaumont, B; Gibart, P
      Infrared studies on GaN single crystals and homoepitaxial layers

      JOURNAL OF CRYSTAL GROWTH
    88. Yoshioka, Y; Shimizu, K; Takagaki, K; Kasuga, M
      Verification of singular plane formation in CdTe homoepitaxy

      JOURNAL OF CRYSTAL GROWTH
    89. Kozlovsky, VI; Krysa, AB; Korostelin, YV; Sadofyev, YG
      MBE growth and characterization of ZnTe epilayers and ZnCdTe/ZnTe structures on GaAs(100) and ZnTe(100) substrates

      JOURNAL OF CRYSTAL GROWTH
    90. Telfer, SA; Morhain, C; Urbaszek, B; O'Donnell, C; Tomasini, P; Balocchi, A; Prior, KA; Cavenett, BC
      MBE growth of ZnS and ZnCdS layers on GaP

      JOURNAL OF CRYSTAL GROWTH
    91. Niraula, M; Mochizuki, D; Aoki, T; Tomita, Y; Hatanaka, Y
      Performance of CdTe gamma-ray detectors fabricated in a new M-pi-n design

      JOURNAL OF CRYSTAL GROWTH
    92. Jeong, JK; Na, HJ; Choi, J; Hwang, CS; Kim, HJ; Bahng, W
      Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor

      JOURNAL OF CRYSTAL GROWTH
    93. Kishino, M; Taguchi, T
      AFM and photoluminescence characterization of defects in the mirror-polished ZnSe bulk crystals and MBE-grown homoepitaxial layers

      JOURNAL OF CRYSTAL GROWTH
    94. Copel, M
      Medium-energy ion scattering for analysis of microelectronic materials

      IBM JOURNAL OF RESEARCH AND DEVELOPMENT
    95. Lukaszew, RA; Sheng, Y; Uher, C; Clarke, R
      Smoothening of Cu films grown on Si(001)

      APPLIED PHYSICS LETTERS
    96. Owen, JHG; Barvosa-Carter, W; Zinck, JJ
      Growth oscillation decay rates for control of III-V molecular beam epitaxynear stoichiometry

      APPLIED PHYSICS LETTERS
    97. Takahashi, T; Kawamukai, T; Ono, S; Noda, T; Sakaki, H
      Kelvin probe force microscopy on InAs thin films on (110) GaAs substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    98. Ryu, JT; Fuse, T; Kubo, O; Fujino, T; Tani, H; Harada, T; Saranin, AA; Zotov, AV; Katayama, M; Oura, K
      Adsorption of atomic hydrogen on the Si(001) 4x3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    99. Sakaguchi, I; Nishitani-Gamo, R; Loh, KP; Haneda, H; Ando, T
      Hydrogen incorporation control in high quality homnoepitaxial diamond (111) growth

      DIAMOND AND RELATED MATERIALS
    100. Nishitani-Gamo, M; Sakaguchi, I; Loh, KP; Takami, T; Kusunoki, I; Ando, T
      Reflection high-energy electron diffraction and low energy electron diffraction studies of the homoepitaxially grown diamond (111) and (001) surfaces

      DIAMOND AND RELATED MATERIALS


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Documento generato il 06/08/20 alle ore 01:04:58