Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'HOLE MOBILITY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 94 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Cavaco, A; Sobolev, NA; Carmo, MC; Presting, H; Konig, U
      Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    2. Korneev, N
      Current anisotropy influence on beam self-focusing in photorefractive materials

      JOURNAL OF MODERN OPTICS
    3. Okumoto, K; Shirota, Y
      Development of new hole-transporting amorphous molecular materials for organic electroluminescent devices and their charge-transport properties

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    4. Mizuno, T; Sugiyama, N; Kurobe, A; Takagi, S
      Advanced SOI MOSFET's with strained-Si/SiGe heterostructures

      IEICE TRANSACTIONS ON ELECTRONICS
    5. Grigalevicius, S; Getautis, V; Grazulevicius, JV; Gaidelis, V; Jankauskas, V; Montrimas, E
      Hole-transporting molecular glasses based on carbazole and diphenylamine moieties

      MATERIALS CHEMISTRY AND PHYSICS
    6. Chen, XD; Ouyang, Q; Jayanarayanan, SK; Prins, FE; Banerjee, S
      An asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

      SOLID-STATE ELECTRONICS
    7. Buika, G; Burbulis, E; Grazulevicius, JV; Getautis, V; Paliulis, O; Gaidelis, V; Montrimas, E; Jankauskas, V
      High hole mobilities in the mixtures of oligo(methylphenylsilylene) and phenylenediamine derivatives

      POLYMER
    8. Parris, RE; Kenkre, VM; Dunlap, DH
      Nature of charge carriers in disordered molecular solids: Are polarons compatible with observations? - art. no. 126601

      PHYSICAL REVIEW LETTERS
    9. Wang, RP; Inaguma, Y; Itoh, M
      Dielectric properties and phase transition mechanisms in Sr1-xBaxTiO3 solid solution at low doping concentration

      MATERIALS RESEARCH BULLETIN
    10. Zhang, L; Takahashi, H; Fukuda, D; Nakazawa, M
      Clustering method to process signals from a CdZnTe detector

      JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY
    11. Chen, XD; Liu, KC; Ouyang, QC; Jayanarayanan, SK; Banerjee, SK
      Hole and electron mobility enhancement in strained SiGe vertical MOSFETs

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    12. Mizuno, T; Sugiyama, N; Kurobe, A; Takagi, S
      Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    13. Lander, RJP; Ponomarev, YV; van Berkum, JGM; de Boer, WB
      High hole mobilities in fully-strained Si1-xGex layers (0.3 < x < 0.4) andtheir significance for SiGe pMOSFET performance

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    14. Murata, H; Malliaras, GG; Uchida, M; Shen, Y; Kafafi, ZH
      Non-dispersive and air-stable electron transport in an amorphous organic semiconductor

      CHEMICAL PHYSICS LETTERS
    15. Huang, LJ; Chu, JO; Canaperi, DF; D'Emic, CP; Anderson, RM; Koester, SJ; Wong, HSP
      SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

      APPLIED PHYSICS LETTERS
    16. Zilker, SJ; Hofmann, U; Leopold, A; Grasruck, M; Hohle, C; Strohriegl, P
      Influence of the charge transport characteristics on the holographic response of organic photorefractive materials

      MOLECULAR CRYSTALS AND LIQUID CRYSTALS
    17. Plater, MJ; McKay, M; Jackson, T
      Synthesis of 1,3,5-tris[4-(diarylamino)phenyl]benzene and 1,3,5-tris(diarylamino)benzene derivatives

      JOURNAL OF THE CHEMICAL SOCIETY-PERKIN TRANSACTIONS 1
    18. De Morais, TD; Chaput, F; Boilot, JP; Lahlil, K; Darracq, B; Levy, Y
      Two-layer light emitting diodes prepared by the sol-gel route

      COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
    19. de Morais, TD; Chaput, F; Boilot, JP; Lahlil, K; Darracq, B; Levy, Y
      Hole mobilities in sol-gel materials

      ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS
    20. Montemezzani, G
      Optimization of photorefractive two-wave mixing by accounting for materialanisotropies: KNbO3 and BaTiO3 - art. no. 053803

      PHYSICAL REVIEW A
    21. Pandey, SS; Takashima, W; Nagamatsu, S; Kaneto, K
      Effect of synthetic impurities on photocarrier transport in poly (3-hexylthiophene)

      IEICE TRANSACTIONS ON ELECTRONICS
    22. Yoshida, M; Ayano, M; Kobayashi, N
      Charge transport properties of triphenylamine-pendant polypeptide

      JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS
    23. Wu, YH; Chin, A
      High temperature formed SiGeP-MOSFET's with good device characteristics

      IEEE ELECTRON DEVICE LETTERS
    24. Shirota, Y; Okumoto, K; Inada, H
      Thermally stable organic light-emitting diodes using new families of hole-transporting amorphous molecular materials

      SYNTHETIC METALS
    25. Okumoto, K; Wayaku, K; Noda, T; Kageyama, H; Shirota, Y
      Amorphous molecular materials: charge transport in the glassy state of N,N'-di(biphenylyl)-N,N '-diphenyl-[1, 1 '-biphenyl]-4,4 '-diamines

      SYNTHETIC METALS
    26. Lee, CJ; Min, BD; Kim, SJ
      Effect of heavy in-situ phosphorus doping on Si1-xGex epitaxial growth by low-pressure chemical-vapor deposition

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    27. Sidek, RM; Straube, UN; Waite, AM; Evans, AGR; Parry, C; Phillips, P; Whall, TE; Parker, EHC
      SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    28. Madhavi, S; Venkataraman, V; Sturm, JC; Xie, YH
      Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells

      PHYSICAL REVIEW B
    29. Arushanov, E; Schon, JH; Tani, J; Kido, H
      Transport properties of beta-Fe1-xMnxSi2 alloys

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    30. Rieh, JS; Bhattacharya, PK; Croke, ET
      Temperature dependent minority electron mobilities in strained Si1-xGex (0.2 <= x <= 0.4) layers

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    31. Ouyang, QQ; Chen, XD; Mudanai, SP; Wang, X; Kencke, DL; Tasch, AF; Register, LF; Banerjee, SK
      A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    32. Gao, YZ; Kan, HF; Aoyama, M; Yamaguchi, T
      Germanium- and zinc-doped p-type InAsSb single crystals with a cutoff wavelength of 12.5 mu m

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    33. Kim, DW; Moon, H; Park, SY; Il Hong, S
      Synthesis of photoconducting nonlinear optical side-chain polymers containing carbazole derivatives

      REACTIVE & FUNCTIONAL POLYMERS
    34. Scott, JC; Ramos, S; Malliaras, GG
      Transient space-charge-limited current measurements of mobility in a luminescent polymer

      JOURNAL OF IMAGING SCIENCE AND TECHNOLOGY
    35. Girshberg, Y; Yacoby, Y
      Ferroelectric phase transitions and off-centre displacements in systems with strong electron-phonon interaction

      JOURNAL OF PHYSICS-CONDENSED MATTER
    36. Lee, WC; Watson, B; King, TJ; Hu, CM
      Enhancement of PMOS device performance with poly-SiGe gate

      IEEE ELECTRON DEVICE LETTERS
    37. Lee, JW; Kim, HK; Yang, JW; Lee, WC; Oh, JH; Oh, MR; Koh, YH
      Comparison of hole mobility in LOGOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates

      IEEE ELECTRON DEVICE LETTERS
    38. Mergulhao, S; Faria, RM; Ferreira, GFL; Sworakowski, J
      Transient photocurrents and steady-state conductivities in surface-doped polyanilines

      SYNTHETIC METALS
    39. Sworakowski, J
      Effect of polar molecules on the transport and localization of charge carriers in molecular materials

      BRAZILIAN JOURNAL OF PHYSICS
    40. Ringel, SA; Grillot, PN
      Electronic properties and deep levels in germanium-silicon

      GERMANIUM SILICON: PHYSICS AND MATERIALS
    41. Gauvin, S; Santerre, F; Dodelet, JP; Ding, Y; Hlil, AR; Hay, AS; Anderson, J; Armstrong, NR; Gorjanc, TC; D'Iorio, M
      Organic light emitting devices containing a highly substituted isoindole or polyisoindole

      THIN SOLID FILMS
    42. Maeda, T; Tanaka, H
      Growth of Ge layers with high hole mobility on surface controlled AlAs by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    43. Hertel, D; Bassler, H; Scherf, U; Horhold, HH
      Charge carrier transport in conjugated polymers

      JOURNAL OF CHEMICAL PHYSICS
    44. Biaggio, I; Gunter, P
      Optical characterization of charge-transport in polar dielectrics by holographic time of flight and space-charge relaxation measurements

      FERROELECTRICS
    45. Redecker, M; Bradley, DDC; Jandke, M; Strohriegl, P
      Electron transport in starburst phenylquinoxalines

      APPLIED PHYSICS LETTERS
    46. Sugii, N; Nakagawa, K; Yamaguchi, S; Miyao, M
      Atomic-layer doping in Si1-xGex/Si/Si1-xGex heterostructures by two-step solid-phase epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    47. Nakayama, H; Ozaki, M; Schmidt, WF; Yoshino, K
      Measurements of carrier mobility and quantum yield of carrier generation in discotic liquid crystal hexahexyl-oxytriphenylene by time-of-flight method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    48. Naka, S; Okada, H; Onnagawa, H; Kido, J; Tsutsui, T
      Time-of-flight measurement of hole mobility in aluminum (III) complexes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    49. BRUNNER K; SCHMIDT OG; WINTER W; EBERL K; GLUCK M; KONIG U
      SIGEC - BAND-GAPS, BAND OFFSETS, OPTICAL-PROPERTIES, AND POTENTIAL APPLICATIONS

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    50. HIONIS G; TRIBERIS GP
      LOW-TEMPERATURE HOLE MOBILITY IN STRAINED P-SI SI1-XGEX/P-SI SELECTIVELY DOPED DOUBLE HETEROJUNCTIONS/

      Superlattices and microstructures
    51. LIU KC; RAY SK; OSWAL SK; BANERJEE SK
      A DEEP-SUBMICRON SI1-XGEX SI VERTICAL PMOSFET FABRICATED BY GE ION-IMPLANTATION/

      IEEE electron device letters
    52. WENZEL M; IRMER G; MONECKE J; SIEGEL W
      DETERMINATION OF THE EFFECTIVE HALL FACTOR IN P-TYPE SEMICONDUCTORS

      Semiconductor science and technology
    53. KOBAYASHI K; YAMAGUCHI S; IGUCHI Y
      ELECTRICAL-TRANSPORT PROPERTIES OF CALCIUM ZIRCONATE AT HIGH-TEMPERATURE

      Solid state ionics
    54. JUSKA G; ARLAUSKAS K; EQUER B; VANDERHAGHEN R
      HIGH-ELECTRIC-FIELD HOLE MOBILITY IN A-SI-H

      Journal of non-crystalline solids
    55. CHOI SJ; SEO JH; LEE JH; SEO KS
      LOW DOPED P-TYPE ALGAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING INTRINSIC CARBON DOPING METHOD

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    56. GAUTIERTHIANCHE E; SENTEIN C; NUNZI JM; LORIN A; DENIS C; RAIMOND P
      DYE CONCENTRATION STUDY IN PVK BASED LIGHT-EMITTING-DIODES

      Journal de chimie physique et de physico-chimie biologique
    57. SAKAI J; KAGEYAMA H; NOMURA S; NAKANO H; SHIROTA Y
      PHOTOACTIVE AND ELECTROACTIVE AMORPHOUS MOLECULAR MATERIAL - MORPHOLOGY, STRUCTURES, AND HOLE TRANSPORT-PROPERTIES OF TRIS[4-(2-THIENYL)PHENYL]AMINE

      Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals
    58. CLIFTON PA; LAVELLE SJ; ONEILL AG
      SUBMICRON STRAINED SI-SIGE HETEROSTRUCTURE MOSFETS

      Microelectronics
    59. BRUNNER K; WINTER W; EBERL K; JINPHILLIPP NY; PHILLIPP F
      FABRICATION AND BAND ALIGNMENT OF PSEUDOMORPHIC SI1-YCY, SI1-X-YGEXCYAND COUPLED SI1-YCY SI1-X-YGEXCY QUANTUM-WELL STRUCTURES ON SI SUBSTRATES/

      Journal of crystal growth
    60. OSTEN HJ; GAWORZEWSKI P
      CHARGE-TRANSPORT IN STRAINED SI1-YCY AND SI1-X-YGEXCY ALLOYS ON SI(001)

      Journal of applied physics
    61. IM S; EISEN F; NICOLET MA; TANNER MO; WANG KL; THEODORE ND
      STRAIN-CONSERVING DOPING OF A PSEUDOMORPHIC METASTABLE GE0.06SI0.94 LAYER ON SI(100) BY LOW-DOSE BF2+ IMPLANTATION

      Journal of applied physics
    62. LINDER KK; ZHANG FC; RIEH JS; BHATTACHARYA P; HOUGHTON D
      REDUCTION OF DISLOCATION DENSITY IN MISMATCHED SIGE SI USING A LOW-TEMPERATURE SI BUFFER LAYER/

      Applied physics letters
    63. KATO K; IIZUKA S; GANGULY G; IKEDA T; MATSUDA A; SATO N
      ELECTRON AND ION ENERGY CONTROLS IN A RADIO-FREQUENCY DISCHARGE PLASMA WITH SILANE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    64. AHN JH; KWONG DL
      DEVICE PERFORMANCE AND RELIABILITY OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHEMICAL-VAPOR-DEPOSITED GATE OXIDES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. FERNANDEZ JM; HART L; ZHANG XM; XIE MH; ZHANG J; JOYCE BA
      EPITAXIAL-GROWTH MODE AND SILICON SILICON-GERMANIUM HETEROINTERFACES/

      Journal of materials science. Materials in electronics
    66. MIYAO M; NAKAGAWA K; NAKAHARA H; KIYOTA Y; KONDO M
      RECENT PROGRESS OF HETEROSTRUCTURE TECHNOLOGIES FOR NOVEL SILICON DEVICES

      Applied surface science
    67. FU Y; JOELSSON KB; GRAHN KJ; NI WX; HANSSON GV; WILLANDER M
      HALL FACTOR IN STRAINED P-TYPE DOPED SI1-XGEX ALLOY

      Physical review. B, Condensed matter
    68. NOMURA S; NISHIMURA K; SHIROTA Y
      CHARGE-TRANSPORT IN THE GLASSY STATE OF ARYLALDEHYDE AND ARYLKETONE HYDRAZONES

      Thin solid films
    69. YOUNG RH; KUNG TM; SINICROPI JA; RULE NG; FITZGERALD JJ; EILERS JE; CHEN CH; BOAZ NW
      EFFECT OF GROUP AND NET DIPOLE-MOMENTS ON ELECTRON-TRANSPORT IN MOLECULARLY DOPED POLYMERS

      Journal of physical chemistry
    70. FERNANDEZ JM; HART L; ZHANG XM; XIE MH; ZHANG J; JOYCE BA
      SILICON SILICON-GERMANIUM MULTIPLE-QUANTUM WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY - HYDROGEN COVERAGE AND INTERFACIAL ABRUPTNESS/

      Journal of crystal growth
    71. LU Q; SARDELA MR; BRAMBLETT TR; GREENE JE
      B-DOPED FULLY STRAINED SI1-XGEX LAYERS GROWN ON SI(001) BY GAS-SOURCEMOLECULAR-BEAM EPITAXY FROM SI2H6, GE2H6, AND B2H6 - CHARGE-TRANSPORTPROPERTIES

      Journal of applied physics
    72. HAUSER JR
      EXTRACTION OF EXPERIMENTAL MOBILITY DATA FOR MOS DEVICES

      I.E.E.E. transactions on electron devices
    73. HIROMOTO N; FUJIWARA M
      HOLE MOBILITY IN GE-GA FAR-INFRARED PHOTOCONDUCTIVE SEMICONDUCTORS ATLOW-TEMPERATURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. WINTLE HJ
      THE PHOTOCURRENT IN A ONE-DIMENSIONAL SINGLE-CRYSTAL POLYMER

      Journal of physics. Condensed matter
    75. HEUN S; BASSLER H; BORSENBERGER P
      THE SPECTRAL ASSESSMENT OF THE ORIGIN OF THE POLARONIC CONTRIBUTION TO CHARGE-TRANSPORT IN A HIGHLY CONJUGATED TRIARYLAMINE DONOR MOLECULE

      Chemical physics
    76. HARTENSTEIN B; BASSLER H; HEUN S; BORSENBERGER P; VANDERAUWERAER M; DESCHRYVER FC
      CHARGE-TRANSPORT IN MOLECULARLY DOPED POLYMERS AT LOW DOPANT CONCENTRATIONS - SIMULATION AND EXPERIMENT

      Chemical physics
    77. KONIG U; DAMBKES H
      SIGE HBTS AND HFETS

      Solid-state electronics
    78. PATEL D; MENONI CS; SCHULT DW; MCMAHON T; GOODNICK SM
      EFFECT OF PRESSURE ON THE OUTPUT CHARACTERISTICS OF P-GAAS ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTOR/

      Journal of physics and chemistry of solids
    79. YOUNG RH; FITZGERALD JJ
      EFFECT OF POLAR ADDITIVES ON CHARGE-TRANSPORT IN A MOLECULARLY DOPED POLYMER - SURVEY OF VARIOUS ADDITIVES

      The Journal of chemical physics
    80. YOUNG RH; FITZGERALD JJ
      EFFECT OF POLAR ADDITIVES ON CHARGE-TRANSPORT IN A MOLECULARLY DOPED POLYMER - EVALUATION OF DISORDER MODELS

      The Journal of chemical physics
    81. YOUNG RH; FITZGERALD JJ
      EFFECT OF POLAR ADDITIVES ON DIELECTRIC-PROPERTIES AND CHARGE-TRANSPORT IN A MOLECULARLY DOPED POLYMER - A TEST OF DIELECTRIC POLARIZATION MODELS

      The Journal of chemical physics
    82. LU WL; GUO JC; KAO CH; HSU CCH; LU LS
      LOW-TEMPERATURE HOLE MOBILITY ANOMALY IN COMPENSATED P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    83. NOVIKOV SV; VANNIKOV AV
      DIPOLE-TRAP MODEL AND NONDISPERSIVE CHARGE-CARRIER TRANSPORT IN POLYMERS OF VARIOUS STRUCTURES

      Journal of physics. Condensed matter
    84. VANDERAUWERAER M; DESCHRYVER FC; BORSENBERGER PM; BASSLER H
      DISORDER IN CHARGE-TRANSPORT IN DOPED POLYMERS

      Advanced materials
    85. LOVEJOY ML; MELLOCH MR; LUNDSTROM MS; KEYES BR; AHRENKIEL RK
      TEMPERATURE-DEPENDENCE OF MINORITY HOLE MOBILITY IN N-GAAS MEASURED WITH A NEW VARIABLE-TEMPERATURE TECHNIQUE()

      Journal of electronic materials
    86. FAN Y; HAN J; HE L; SARAIE J; GUNSHOR RL; HAGEROTT M; NURMIKKO AV
      ELECTRICAL-TRANSPORT CHARACTERIZATIONS OF NITROGEN-DOPED ZNSE AND ZNTE FILMS

      Journal of electronic materials
    87. NOVIKOV SV; VANNIKOV AV
      MODEL OF DIPOLE TRAPS AND EFFECT OF MEDIU M POLARITY ON CHARGE-CARRIER TRANSPORT IN POLYMERS

      Himiceskaa fizika
    88. VANNIKOV AV; GRISHINA AD; NOVIKOV SV
      ELECTRON-TRANSPORT AND ELECTROLUMINESCENC E IN POLYMER LAYERS

      Uspehi himii
    89. BONVOISIN J; LAUNAY JP; VANDERAUWERAER M; DESCHRYVER FC
      ORGANIC MIXED-VALENCE SYSTEMS - INTERVALENCE TRANSITION IN PARTLY OXIDIZED AROMATIC POLYAMINES - ELECTROCHEMICAL AND OPTICAL STUDIES

      Journal of physical chemistry
    90. VERDONCKTVANDEBROEK S; CRABBE EF; MEYERSON BS; HARAME DL; RESTLE PJ; STORK JMC; JOHNSON JB
      SIGE-CHANNEL HETEROJUNCTION P-MOSFETS

      I.E.E.E. transactions on electron devices
    91. NAYAK DK; WOO JCS; PARK JS; WANG KL; MACWILLIAMS KP
      HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR ON STRAINED SI

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. KANEMITSU Y
      MICROSCOPIC NATURE OF HOPPING CHARGE-TRANSPORT IN DISORDERED MOLECULAR-SOLIDS

      Journal of non-crystalline solids
    93. MAKIMOTO T; KOBAYASHI N
      CARBON ATOMIC LAYER DOPING IN ALGAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND ITS APPLICATION TO A P-TYPE MODULATION-DOPED STRUCTURE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    94. HSIEH SW; CHANG CY; LEE YS; LIN CW; WU BS; CHEN HK
      AMBIPOLAR PERFORMANCES OF NOVEL AMORPHOUS SILICON-GERMANIUM ALLOY THIN-FILM TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/08/20 alle ore 20:13:49