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La ricerca find articoli where soggetti phrase all words 'HGCDTE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 655 riferimenti
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    1. Bicknell, WE
      Space charge solution of Rittner photoconductor equation for a HgCdTe detector

      INFRARED PHYSICS & TECHNOLOGY
    2. Ivasiv, ZF; Tetyorkin, VV; Sizov, FF
      Optical and photoelectrical properties of Hg1-xCdxTe/CdTe epitaxial films with graded band gap

      INFRARED PHYSICS & TECHNOLOGY
    3. Selamet, Y; Grein, CH; Lee, TS; Sivananthan, S
      Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    4. Phillips, J; Edwall, D; Lee, D; Arias, J
      Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    5. Sidorov, YG; Dvoretskii, SA; Varavin, VS; Mikhailov, NN; Yakushev, MV; Sabinina, IV
      Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

      SEMICONDUCTORS
    6. Vasil'ev, VV; Zakhar'yash, TI; Kesler, VG; Parm, IO; Solov'ev, AP
      Investigation of a change in the chemical composition of the surface of CdxHg1-xTe samples as a result of treatment by N2O and H-2 gases activated ina high-frequency discharge

      SEMICONDUCTORS
    7. Eppeldauer, GP; Martin, RJ
      Photocurrent measurement of PC and PVHgCdTe detectors

      JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
    8. Zhou, YD; Fang, JX; Li, YJ; Gong, HM; Wu, XS; Jin, XF; Tang, DY
      Fabrication and study on the HgCdTe MIS device of CdTe plus ZnS double insulator films

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    9. Wu, Y; Wang, SL; Chen, L; Yu, MF; Qiao, YM; He, L
      Indium doping on MBE grown HgCdTe

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    10. Varesi, JB; Bornfreund, RE; Childs, AC; Radford, WA; Maranowski, KD; Peterson, JM; Johnson, SM; Giegerich, LM; de Lyon, TJ; Jensen, JE
      Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4 '' silicon substrates

      JOURNAL OF ELECTRONIC MATERIALS
    11. Tribolet, P; Chatard, JP; Costa, P; Paltrier, S
      MCT technology challenges for mass production

      JOURNAL OF ELECTRONIC MATERIALS
    12. D'Souza, AI; Dewames, RE; Wijewarnasuriya, PS; Hildebrandt, G; Arias, JM
      Current mechanisms in VLWIR Hg1-xCdxTe photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    13. Tennant, WE; Thomas, M; Kozlowski, LJ; McLevige, WV; Edwall, DD; Zandian, M; Spariosu, K; Hildebrandt, G; Gil, V; Ely, P; Muzilla, M; Stoltz, A; Dinan, JH
      A novel simultaneous unipolar multispectral integrated technology approachfor HgCdTeIR detectors and focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    14. Almeida, LA; Hirsch, L; Martinka, M; Boyd, PR; Dinan, JH
      Improved morphology and crystalline quality of MBE CdZnTe/Si

      JOURNAL OF ELECTRONIC MATERIALS
    15. Maranowski, KD; Peterson, JM; Johnson, SM; Varesi, JB; Childs, AC; Bornfreund, RE; Buell, AA; Radford, WA; de Lyon, TJ; Jensen, JE
      MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    16. Zandian, M; Goo, E
      TEM investigation of defects in arsenic doped layers grown in-situ by MBE

      JOURNAL OF ELECTRONIC MATERIALS
    17. Piquette, EC; Zandian, M; Edwall, DD; Arias, JM
      MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations

      JOURNAL OF ELECTRONIC MATERIALS
    18. Martinka, M; Almeida, LA; Benson, JD; Dinan, JH
      Characterization of cross-hatch morphology of MBE (211) HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    19. Edwall, D; Phillips, J; Lee, D; Arias, J
      Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry

      JOURNAL OF ELECTRONIC MATERIALS
    20. Baker, IM; Maxey, CD
      Summary of HgCdTe 2D array technology in the UK

      JOURNAL OF ELECTRONIC MATERIALS
    21. Garber, V; Dust, A; Baskin, E; Spektor, B; Bahir, G
      Estimation of the p-n junction depth in LWIR HgCdTe detectors from the spatial profile of the lateral photocurrent and transverse photovoltage induced by an infrared small spot

      JOURNAL OF ELECTRONIC MATERIALS
    22. Bahir, G; Garber, V; Dust, A
      Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    23. Velicu, S; Badano, G; Selamet, Y; Grein, CH; Faurie, JP; Sivananthan, S; Boieriu, P; Rafol, D; Ashokan, R
      HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

      JOURNAL OF ELECTRONIC MATERIALS
    24. Brill, G; Velicu, S; Boieriu, P; Chen, Y; Dhar, NK; Lee, TS; Selamet, Y; Sivananthan, S
      MBE growth and device processing of MWIR HgCdTe on large area Si substrates

      JOURNAL OF ELECTRONIC MATERIALS
    25. Weiss, E; Klin, O; Benory, E; Kedar, E; Juravel, Y
      Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers

      JOURNAL OF ELECTRONIC MATERIALS
    26. White, J; Pal, R; Dell, JM; Musca, CA; Antoszewski, J; Faraone, L; Burke, P
      p-to-n type-conversion mechanisms for HgCdTe exposed to H-2/CH4 plasmas

      JOURNAL OF ELECTRONIC MATERIALS
    27. Gluszak, EA; Hinckley, S
      Contactless junction contrast of HgCdTe n-on-p-type structures obtained byreactive ion etching induced p-to-n conversion

      JOURNAL OF ELECTRONIC MATERIALS
    28. Schaake, HF
      On the kinetics of the activation of arsenic as a p-type dopant in Hg1-xCdxTe

      JOURNAL OF ELECTRONIC MATERIALS
    29. Aqariden, F; Shih, HD; Turner, AM; Liao, PK
      Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B

      JOURNAL OF ELECTRONIC MATERIALS
    30. Pal, R; Gopal, V; Chaudhury, PK; Sharma, BL; Basu, PK; Agnihotri, OP; Kumar, V
      Study of interface traps from transient photoconductive decay measurementsin passivated HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    31. Zhang, R; Bhat, I
      Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth

      JOURNAL OF ELECTRONIC MATERIALS
    32. Radantsev, VF; Yafyasov, AM; Bogevolnov, VB
      Exchange and spin-orbit effects in inversion layers on the gapless semimagnetic semiconductor HgMnTe

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    33. Moravec, P; Grill, R; Franc, J; Varghova, R; Hoschl, P; Belas, E
      Galvanomagnetic and thermoelectric properties of p-Hg1-xCdxTe (x approximate to 0.22)

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    34. Virt, IS; Bester, M; Dumanski, L; Kuzma, M; Rudyj, IO; Frugynskyi, MS; Kurilo, IV
      Properties of HgCdTe films obtained by laser deposition on a sapphire

      APPLIED SURFACE SCIENCE
    35. Squillante, MR; Cirignano, L; Grazioso, R
      Room-temperature semiconductor device and array configurations

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    36. Aguirre, MH; Canepa, HR
      Ar-implanted epitaxially grown HgCdTe: evaluation of structural damage by RBS and TEM

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    37. Dhar, V; Gopal, V
      Infrared detector performance in an area array

      OPTICAL ENGINEERING
    38. Dhar, V; Gopal, V
      Ratio of quantum efficiency to crosstalk: a proposed figure of merit for amosaic infrared diode array

      OPTICAL ENGINEERING
    39. Virt, I; Bilyk, M; Stefaniuk, I; Kuzma, M
      Properties of HgCdTe crystals passivated by A(2)B(6) layers

      SOLID-STATE ELECTRONICS
    40. Belas, E; Grill, R; Franc, J; Moravec, P; Varghova, R; Hoschl, P; Sitter, H; Toth, AL
      Dynamics of native point defects in H-2 and Ar plasma-etched narrow gap (HgCd)Te

      JOURNAL OF CRYSTAL GROWTH
    41. Wenus, J; Rutkowski, J; Rogalski, A
      Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    42. Virt, IS; Kuzma, M; Rudyi, IO; Frugynskyi, MS; Kurilo, IV; Lopatynskyj, IY
      Morphology changes of Hg1-xCdxTe target in the PLD process

      CANADIAN JOURNAL OF PHYSICS
    43. Ortner, K; Zhang, XC; Oehling, S; Gerschutz, J; Pfeuffer-Jeschke, A; Hock, V; Becker, CR; Landwehr, G; Molenkamp, LW
      Growth and characterization of p-type HgTe/Hg1-xCdxTe single quantum wellsusing nitrogen and arsenic

      APPLIED PHYSICS LETTERS
    44. Hong, JK; Kim, S; Sung, MY; Chung, YC; Kim, SU; Park, MJ
      The subbands and resonant tunneling of a two-dimensional electron gas in aHgCdTe metal-insulator-semiconductor structure

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    45. Jozwikowski, K
      Computer simulation of non-cooled long-wavelength multijunction (Cd,Hg)Te photodiodes

      INFRARED PHYSICS & TECHNOLOGY
    46. Kalafi, M; Tajalli, H; Akhoundi, MS; Kaziev, F
      Realization of an uncooled photoconductor based on Hg1-xCdxTe operating inthe 2-6 mu m spectral range

      INFRARED PHYSICS & TECHNOLOGY
    47. Rogalski, A
      Heterostructure infrared photovoltaic detectors

      INFRARED PHYSICS & TECHNOLOGY
    48. Smith, EPG; Musca, CA; Faraone, L
      Two-dimensional modelling of HgCdTe photoconductive detectors

      INFRARED PHYSICS & TECHNOLOGY
    49. Aqariden, F; Shih, HD; Liao, PK; Duncan, WM; Dat, R
      Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    50. Sidorov, YG; Dvoretskii, SA; Mikhailov, NN; Yakushev, MV; Varavin, VS; Antsiferov, AP
      Molecular-beam epitaxy of narrow-band CdxHg1-xTe. Equipment and technology

      JOURNAL OF OPTICAL TECHNOLOGY
    51. Vasil'ev, VV; Esaev, DG; Kravchenko, AF; Osadchii, VM; Suslyakov, AO
      Study of the effect of graded gap epilayers on the performance of CdxHg1-xTe photodiodes

      SEMICONDUCTORS
    52. Gasan-Zade, SG; Staryi, SV; Strikha, MV; Shepel'skii, GA
      Special features of photoelectric properties of p-CdxHg1-xTe crystals at low temperatures: The effects of the freezing-out of holes and elastic stress

      SEMICONDUCTORS
    53. Mainzer, N; Zolotoyabko, E
      Point defects and their diffusion in mercury cadmium telluride: Investigation based upon high-resolution x-ray diffraction

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    54. Rogalski, A
      Dual-band infrared detectors

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    55. Zhao, J; Lu, HQ; Li, XY; Fang, JX
      Secondary ion mass spectrometry characterization of ion-implanted arsenic distribution in bulk HgCdTe

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    56. Chang, Y; Wang, XG; Tang, WG; Chu, JH
      Infrared photoluminescence from narrow gap Hg0.79CD0.21Te

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    57. Zhou, YD; Fang, JX; Tang, DY
      The study of two kinds of surface passivation ways for n-HgCdTe photoconductor device

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    58. Wenus, J; Madejczyk, P; Rutkowski, J
      Comparison of characterization techniques in p-on-n HgCdTe LWIR photodiodes technology

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    59. Huang, GS; Chen, XQ; Yang, JR; He, L
      Growth and characterization of liquid-phase epitaxial Hg1-xCdxTe films

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    60. Zhou, YD; Zhao, J; Gong, HM; Li, YJ; Fang, JX
      Surface recombination velocity of the HgCdTe surface passivated with sputtering CdTe film

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    61. Jiang, CP; Gui, YS; Zheng, GZ; Ma, ZX; Li, B; Guo, SL; Chu, JH
      Study on transport properties of two-dimensional electron gases in n-Hg0.80Mg0.20Te interface accumulation layer

      ACTA PHYSICA SINICA
    62. Jiang, CP; Gui, YS; Zheng, GZ; Ma, ZX; Wang, SL; He, L; Chu, JH
      Investigation of the light hole in p-type Hg1-xCdxTe

      ACTA PHYSICA SINICA
    63. Shaw, D; Capper, P
      Conductivity type conversion in Hg1-xCdxTe

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    64. Cerny, R; Kalbac, A; Prikryl, P
      Computational modeling of CdZnTe crystal growth from the melt

      COMPUTATIONAL MATERIALS SCIENCE
    65. Smith, DJ; Tsen, SCY; Chandrasekhar, D; Crozier, PA; Rujirawat, S; Brill, G; Chen, YP; Sporken, R; Sivananthan, S
      Growth and characterization of CdTe/Si heterostructures - effect of substrate orientation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    66. D'Souza, AI; Dawson, LC; Staller, C; Wijewarnasuriya, PS; Dewames, RE; McLevige, WV; Arias, JM; Edwall, D; Hildebrandt, G
      Large VLWIR Hg1-xCdxTe photovoltaic detectors

      JOURNAL OF ELECTRONIC MATERIALS
    67. Ashokan, R; Dhar, NK; Yang, B; Akhiyat, A; Lee, TS; Rujirawat, S; Yousuf, S; Sivananthan, S
      Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    68. Ferret, P; Zanatta, JP; Hamelin, R; Cremer, S; Million, A; Wolny, M; Destefanis, G
      Status of the MBE technology at Leti LIR for the manufacturing of HgCdTe focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    69. Wark, AW; Berlouis, LEA; Cruickshank, FK; Pugh, D; Brevet, PF
      In-situ evaluation of the anodic oxide growth on Hg1-xCdxTe (MCT) using ellipsometry and second harmonic generation

      JOURNAL OF ELECTRONIC MATERIALS
    70. Robinson, HG; Berding, MA; Hamilton, WJ; Kosai, K; DeLyon, T; Johnson, WB; Walker, BJ
      Enhanced diffusion and interdiffusion in HgCdTe from Fermi-level effects

      JOURNAL OF ELECTRONIC MATERIALS
    71. Berding, MA
      Equilibrium properties of indium and iodine in LWIR HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    72. Rhiger, DR; Sen, S; Gordon, EE
      Strain relief in epitaxial HgCdTe by growth on a reticulated substrate

      JOURNAL OF ELECTRONIC MATERIALS
    73. Berding, MA; Nix, WD; Rhiger, DR; Sen, S; Sher, A
      Critical thickness in the HgCdTe/CdZnTe system

      JOURNAL OF ELECTRONIC MATERIALS
    74. Johnson, SM; Johnson, JL; Hamilton, WJ; Leonard, DB; Strand, TA; Patten, EA; Peterson, JM; Durhan, JH; Randall, VK; deLyon, TJ; Jensen, JE; Gorwitz, MD
      HgCdZnTe quaternary materials for lattice-matched two-color detectors

      JOURNAL OF ELECTRONIC MATERIALS
    75. Skauli, T; Colin, T; Sjolie, R; Lovold, S
      Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates

      JOURNAL OF ELECTRONIC MATERIALS
    76. Aqariden, F; Shih, HD; Turner, AM; Chandra, D; Liao, PK
      Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

      JOURNAL OF ELECTRONIC MATERIALS
    77. Chandra, D; Schaake, HF; Tregilgas, JH; Aqariden, F; Kinch, MA; Syllaois, AJ
      Vacancies in Hg1-xCdxTe

      JOURNAL OF ELECTRONIC MATERIALS
    78. Zhao, LJ; Speck, JS; Rajavel, R; Jensen, J; Leonard, D; Strand, T; Hamilton, W
      Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    79. Jowikowski, K; Rogalski, A
      Effect of dislocations on performance of LWIR HgCdTe photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    80. Almeida, LA; Dhar, NK; Martinka, M; Dinan, JH
      HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

      JOURNAL OF ELECTRONIC MATERIALS
    81. Zhang, R; Bhat, I
      Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    82. Sen, S; Rhiger, DR; Curtis, CR; Norton, PR
      Extraction of mobile impurities from CdZnTe

      JOURNAL OF ELECTRONIC MATERIALS
    83. Tobin, SP; Hutchins, MA; Norton, PW
      Composition and thickness control of thin LPE HgCdTe layers using X-ray diffraction

      JOURNAL OF ELECTRONIC MATERIALS
    84. Mainzer, N; Zolotoyabko, E
      Percolation problem in boron - Implanted mercury cadmium telluride

      JOURNAL OF ELECTRONIC MATERIALS
    85. Lam, TT; Moore, CD; Forrest, RL; Goorsky, MS; Johnson, SM; Leonard, DB; Strand, TA; Delyon, TJ; Gorwitz, MD
      Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

      JOURNAL OF ELECTRONIC MATERIALS
    86. Kinch, MA
      Fundamental physics of infrared detector materials

      JOURNAL OF ELECTRONIC MATERIALS
    87. Gordon, NT; Hall, RS; Jones, CL; Maxey, CD; Metcalfe, NE; Catchpole, RA; White, AM
      MCP infrafed detectors with close to radiatively limited performance at 240 K in the 3-5 mu m band

      JOURNAL OF ELECTRONIC MATERIALS
    88. Velicu, S; Ashokan, R; Sivananthan, S
      A model for dark current and multiplication in HgCdTe avalanche photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    89. Krishnamurthy, S; Casselman, TN
      A detailed calculation of the Auger lifetime in p-type HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    90. Kim, YH; Bae, SH; Lee, HC; Kim, CK
      Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion

      JOURNAL OF ELECTRONIC MATERIALS
    91. Antoszewski, J; Musca, CA; Dell, JM; Faraone, L
      Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

      JOURNAL OF ELECTRONIC MATERIALS
    92. Haakenaasen, R; Colin, T; Steen, H; Trosdahl-Iversen, L
      Electron beam induced current study of ion beam milling type conversion inmolecular beam epitaxy vacancy-doped CdxHg1-xTe

      JOURNAL OF ELECTRONIC MATERIALS
    93. Smith, EPG; Musca, CA; Redfern, DA; Dell, JM; Faraone, L
      H-2-based dry plasma etching for mesa structuring of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    94. Kim, YH; Kim, TS; Redfern, DA; Musca, CA; Lee, HC; Kim, CK
      Characteristics of gradually doped LWIR diodes by hydrogenation

      JOURNAL OF ELECTRONIC MATERIALS
    95. Menon, VM; Ram-Mohan, LR; Vurgaftman, I; Meyer, JR
      TE- and TM-polarized optoelectronic properties of HgCdTe quantum wells

      JOURNAL OF ELECTRONIC MATERIALS
    96. Lee, TS; Garland, J; Grein, CH; Sumstine, M; Jandeska, A; Selamet, Y; Sivananthan, S
      Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    97. Wang, L; Zhang, LH
      SIMS quantification of as and in in Hg1-xCdxTe materials of different x values

      JOURNAL OF ELECTRONIC MATERIALS
    98. Bae, SH; Lee, SJ; Kim, YH; Lee, HC; Kim, CK
      Analysis of 1/f noise in LWIR HgCdTe photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    99. Chandra, D; Aqariden, F; Frazier, J; Gutzler, S; Orent, T; Shih, WD
      Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    100. Shaw, D
      The incorporation and diffusivity of As in Hg0.8Cd0.2Te

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY


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Documento generato il 08/08/20 alle ore 22:29:05