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- Bicknell, WE

Space charge solution of Rittner photoconductor equation for a HgCdTe detector*INFRARED PHYSICS & TECHNOLOGY*

- Ivasiv, ZF; Tetyorkin, VV; Sizov, FF

Optical and photoelectrical properties of Hg1-xCdxTe/CdTe epitaxial films with graded band gap*INFRARED PHYSICS & TECHNOLOGY*

- Selamet, Y; Grein, CH; Lee, TS; Sivananthan, S

Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxy*JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B*

- Phillips, J; Edwall, D; Lee, D; Arias, J

Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements*JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B*

- Sidorov, YG; Dvoretskii, SA; Varavin, VS; Mikhailov, NN; Yakushev, MV; Sabinina, IV

Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates*SEMICONDUCTORS*

- Vasil'ev, VV; Zakhar'yash, TI; Kesler, VG; Parm, IO; Solov'ev, AP

Investigation of a change in the chemical composition of the surface of CdxHg1-xTe samples as a result of treatment by N2O and H-2 gases activated ina high-frequency discharge*SEMICONDUCTORS*

- Eppeldauer, GP; Martin, RJ

Photocurrent measurement of PC and PVHgCdTe detectors*JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY*

- Zhou, YD; Fang, JX; Li, YJ; Gong, HM; Wu, XS; Jin, XF; Tang, DY

Fabrication and study on the HgCdTe MIS device of CdTe plus ZnS double insulator films*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Wu, Y; Wang, SL; Chen, L; Yu, MF; Qiao, YM; He, L

Indium doping on MBE grown HgCdTe*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Varesi, JB; Bornfreund, RE; Childs, AC; Radford, WA; Maranowski, KD; Peterson, JM; Johnson, SM; Giegerich, LM; de Lyon, TJ; Jensen, JE

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4 '' silicon substrates*JOURNAL OF ELECTRONIC MATERIALS*

- Tribolet, P; Chatard, JP; Costa, P; Paltrier, S

MCT technology challenges for mass production*JOURNAL OF ELECTRONIC MATERIALS*

- D'Souza, AI; Dewames, RE; Wijewarnasuriya, PS; Hildebrandt, G; Arias, JM

Current mechanisms in VLWIR Hg1-xCdxTe photodiodes*JOURNAL OF ELECTRONIC MATERIALS*

- Tennant, WE; Thomas, M; Kozlowski, LJ; McLevige, WV; Edwall, DD; Zandian, M; Spariosu, K; Hildebrandt, G; Gil, V; Ely, P; Muzilla, M; Stoltz, A; Dinan, JH

A novel simultaneous unipolar multispectral integrated technology approachfor HgCdTeIR detectors and focal plane arrays*JOURNAL OF ELECTRONIC MATERIALS*

- Almeida, LA; Hirsch, L; Martinka, M; Boyd, PR; Dinan, JH

Improved morphology and crystalline quality of MBE CdZnTe/Si*JOURNAL OF ELECTRONIC MATERIALS*

- Maranowski, KD; Peterson, JM; Johnson, SM; Varesi, JB; Childs, AC; Bornfreund, RE; Buell, AA; Radford, WA; de Lyon, TJ; Jensen, JE

MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays*JOURNAL OF ELECTRONIC MATERIALS*

- Zandian, M; Goo, E

TEM investigation of defects in arsenic doped layers grown in-situ by MBE*JOURNAL OF ELECTRONIC MATERIALS*

- Piquette, EC; Zandian, M; Edwall, DD; Arias, JM

MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations*JOURNAL OF ELECTRONIC MATERIALS*

- Martinka, M; Almeida, LA; Benson, JD; Dinan, JH

Characterization of cross-hatch morphology of MBE (211) HgCdTe*JOURNAL OF ELECTRONIC MATERIALS*

- Edwall, D; Phillips, J; Lee, D; Arias, J

Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry*JOURNAL OF ELECTRONIC MATERIALS*

- Baker, IM; Maxey, CD

Summary of HgCdTe 2D array technology in the UK*JOURNAL OF ELECTRONIC MATERIALS*

- Garber, V; Dust, A; Baskin, E; Spektor, B; Bahir, G

Estimation of the p-n junction depth in LWIR HgCdTe detectors from the spatial profile of the lateral photocurrent and transverse photovoltage induced by an infrared small spot*JOURNAL OF ELECTRONIC MATERIALS*

- Bahir, G; Garber, V; Dust, A

Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes*JOURNAL OF ELECTRONIC MATERIALS*

- Velicu, S; Badano, G; Selamet, Y; Grein, CH; Faurie, JP; Sivananthan, S; Boieriu, P; Rafol, D; Ashokan, R

HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation*JOURNAL OF ELECTRONIC MATERIALS*

- Brill, G; Velicu, S; Boieriu, P; Chen, Y; Dhar, NK; Lee, TS; Selamet, Y; Sivananthan, S

MBE growth and device processing of MWIR HgCdTe on large area Si substrates*JOURNAL OF ELECTRONIC MATERIALS*

- Weiss, E; Klin, O; Benory, E; Kedar, E; Juravel, Y

Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers*JOURNAL OF ELECTRONIC MATERIALS*

- White, J; Pal, R; Dell, JM; Musca, CA; Antoszewski, J; Faraone, L; Burke, P

p-to-n type-conversion mechanisms for HgCdTe exposed to H-2/CH4 plasmas*JOURNAL OF ELECTRONIC MATERIALS*

- Gluszak, EA; Hinckley, S

Contactless junction contrast of HgCdTe n-on-p-type structures obtained byreactive ion etching induced p-to-n conversion*JOURNAL OF ELECTRONIC MATERIALS*

- Schaake, HF

On the kinetics of the activation of arsenic as a p-type dopant in Hg1-xCdxTe*JOURNAL OF ELECTRONIC MATERIALS*

- Aqariden, F; Shih, HD; Turner, AM; Liao, PK

Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B*JOURNAL OF ELECTRONIC MATERIALS*

- Pal, R; Gopal, V; Chaudhury, PK; Sharma, BL; Basu, PK; Agnihotri, OP; Kumar, V

Study of interface traps from transient photoconductive decay measurementsin passivated HgCdTe*JOURNAL OF ELECTRONIC MATERIALS*

- Zhang, R; Bhat, I

Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth*JOURNAL OF ELECTRONIC MATERIALS*

- Radantsev, VF; Yafyasov, AM; Bogevolnov, VB

Exchange and spin-orbit effects in inversion layers on the gapless semimagnetic semiconductor HgMnTe*SEMICONDUCTOR SCIENCE AND TECHNOLOGY*

- Moravec, P; Grill, R; Franc, J; Varghova, R; Hoschl, P; Belas, E

Galvanomagnetic and thermoelectric properties of p-Hg1-xCdxTe (x approximate to 0.22)*SEMICONDUCTOR SCIENCE AND TECHNOLOGY*

- Virt, IS; Bester, M; Dumanski, L; Kuzma, M; Rudyj, IO; Frugynskyi, MS; Kurilo, IV

Properties of HgCdTe films obtained by laser deposition on a sapphire*APPLIED SURFACE SCIENCE*

- Squillante, MR; Cirignano, L; Grazioso, R

Room-temperature semiconductor device and array configurations*NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT*

- Aguirre, MH; Canepa, HR

Ar-implanted epitaxially grown HgCdTe: evaluation of structural damage by RBS and TEM*NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS*

- Dhar, V; Gopal, V

Infrared detector performance in an area array*OPTICAL ENGINEERING*

- Dhar, V; Gopal, V

Ratio of quantum efficiency to crosstalk: a proposed figure of merit for amosaic infrared diode array*OPTICAL ENGINEERING*

- Virt, I; Bilyk, M; Stefaniuk, I; Kuzma, M

Properties of HgCdTe crystals passivated by A(2)B(6) layers*SOLID-STATE ELECTRONICS*

- Belas, E; Grill, R; Franc, J; Moravec, P; Varghova, R; Hoschl, P; Sitter, H; Toth, AL

Dynamics of native point defects in H-2 and Ar plasma-etched narrow gap (HgCd)Te*JOURNAL OF CRYSTAL GROWTH*

- Wenus, J; Rutkowski, J; Rogalski, A

Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Virt, IS; Kuzma, M; Rudyi, IO; Frugynskyi, MS; Kurilo, IV; Lopatynskyj, IY

Morphology changes of Hg1-xCdxTe target in the PLD process*CANADIAN JOURNAL OF PHYSICS*

- Ortner, K; Zhang, XC; Oehling, S; Gerschutz, J; Pfeuffer-Jeschke, A; Hock, V; Becker, CR; Landwehr, G; Molenkamp, LW

Growth and characterization of p-type HgTe/Hg1-xCdxTe single quantum wellsusing nitrogen and arsenic*APPLIED PHYSICS LETTERS*

- Hong, JK; Kim, S; Sung, MY; Chung, YC; Kim, SU; Park, MJ

The subbands and resonant tunneling of a two-dimensional electron gas in aHgCdTe metal-insulator-semiconductor structure*JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS*

- Jozwikowski, K

Computer simulation of non-cooled long-wavelength multijunction (Cd,Hg)Te photodiodes*INFRARED PHYSICS & TECHNOLOGY*

- Kalafi, M; Tajalli, H; Akhoundi, MS; Kaziev, F

Realization of an uncooled photoconductor based on Hg1-xCdxTe operating inthe 2-6 mu m spectral range*INFRARED PHYSICS & TECHNOLOGY*

- Rogalski, A

Heterostructure infrared photovoltaic detectors*INFRARED PHYSICS & TECHNOLOGY*

- Smith, EPG; Musca, CA; Faraone, L

Two-dimensional modelling of HgCdTe photoconductive detectors*INFRARED PHYSICS & TECHNOLOGY*

- Aqariden, F; Shih, HD; Liao, PK; Duncan, WM; Dat, R

Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy*JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B*

- Sidorov, YG; Dvoretskii, SA; Mikhailov, NN; Yakushev, MV; Varavin, VS; Antsiferov, AP

Molecular-beam epitaxy of narrow-band CdxHg1-xTe. Equipment and technology*JOURNAL OF OPTICAL TECHNOLOGY*

- Vasil'ev, VV; Esaev, DG; Kravchenko, AF; Osadchii, VM; Suslyakov, AO

Study of the effect of graded gap epilayers on the performance of CdxHg1-xTe photodiodes*SEMICONDUCTORS*

- Gasan-Zade, SG; Staryi, SV; Strikha, MV; Shepel'skii, GA

Special features of photoelectric properties of p-CdxHg1-xTe crystals at low temperatures: The effects of the freezing-out of holes and elastic stress*SEMICONDUCTORS*

- Mainzer, N; Zolotoyabko, E

Point defects and their diffusion in mercury cadmium telluride: Investigation based upon high-resolution x-ray diffraction*DEFECTS AND DIFFUSION IN SEMICONDUCTORS*

- Rogalski, A

Dual-band infrared detectors*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Zhao, J; Lu, HQ; Li, XY; Fang, JX

Secondary ion mass spectrometry characterization of ion-implanted arsenic distribution in bulk HgCdTe*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Chang, Y; Wang, XG; Tang, WG; Chu, JH

Infrared photoluminescence from narrow gap Hg0.79CD0.21Te*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Zhou, YD; Fang, JX; Tang, DY

The study of two kinds of surface passivation ways for n-HgCdTe photoconductor device*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Wenus, J; Madejczyk, P; Rutkowski, J

Comparison of characterization techniques in p-on-n HgCdTe LWIR photodiodes technology*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Huang, GS; Chen, XQ; Yang, JR; He, L

Growth and characterization of liquid-phase epitaxial Hg1-xCdxTe films*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Zhou, YD; Zhao, J; Gong, HM; Li, YJ; Fang, JX

Surface recombination velocity of the HgCdTe surface passivated with sputtering CdTe film*JOURNAL OF INFRARED AND MILLIMETER WAVES*

- Jiang, CP; Gui, YS; Zheng, GZ; Ma, ZX; Li, B; Guo, SL; Chu, JH

Study on transport properties of two-dimensional electron gases in n-Hg0.80Mg0.20Te interface accumulation layer*ACTA PHYSICA SINICA*

- Jiang, CP; Gui, YS; Zheng, GZ; Ma, ZX; Wang, SL; He, L; Chu, JH

Investigation of the light hole in p-type Hg1-xCdxTe*ACTA PHYSICA SINICA*

- Shaw, D; Capper, P

Conductivity type conversion in Hg1-xCdxTe*JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS*

- Cerny, R; Kalbac, A; Prikryl, P

Computational modeling of CdZnTe crystal growth from the melt*COMPUTATIONAL MATERIALS SCIENCE*

- Smith, DJ; Tsen, SCY; Chandrasekhar, D; Crozier, PA; Rujirawat, S; Brill, G; Chen, YP; Sporken, R; Sivananthan, S

Growth and characterization of CdTe/Si heterostructures - effect of substrate orientation*MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY*

- D'Souza, AI; Dawson, LC; Staller, C; Wijewarnasuriya, PS; Dewames, RE; McLevige, WV; Arias, JM; Edwall, D; Hildebrandt, G

Large VLWIR Hg1-xCdxTe photovoltaic detectors*JOURNAL OF ELECTRONIC MATERIALS*

- Ashokan, R; Dhar, NK; Yang, B; Akhiyat, A; Lee, TS; Rujirawat, S; Yousuf, S; Sivananthan, S

Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy*JOURNAL OF ELECTRONIC MATERIALS*

- Ferret, P; Zanatta, JP; Hamelin, R; Cremer, S; Million, A; Wolny, M; Destefanis, G

Status of the MBE technology at Leti LIR for the manufacturing of HgCdTe focal plane arrays*JOURNAL OF ELECTRONIC MATERIALS*

- Wark, AW; Berlouis, LEA; Cruickshank, FK; Pugh, D; Brevet, PF

In-situ evaluation of the anodic oxide growth on Hg1-xCdxTe (MCT) using ellipsometry and second harmonic generation*JOURNAL OF ELECTRONIC MATERIALS*

- Robinson, HG; Berding, MA; Hamilton, WJ; Kosai, K; DeLyon, T; Johnson, WB; Walker, BJ

Enhanced diffusion and interdiffusion in HgCdTe from Fermi-level effects*JOURNAL OF ELECTRONIC MATERIALS*

- Berding, MA

Equilibrium properties of indium and iodine in LWIR HgCdTe*JOURNAL OF ELECTRONIC MATERIALS*

- Rhiger, DR; Sen, S; Gordon, EE

Strain relief in epitaxial HgCdTe by growth on a reticulated substrate*JOURNAL OF ELECTRONIC MATERIALS*

- Berding, MA; Nix, WD; Rhiger, DR; Sen, S; Sher, A

Critical thickness in the HgCdTe/CdZnTe system*JOURNAL OF ELECTRONIC MATERIALS*

- Johnson, SM; Johnson, JL; Hamilton, WJ; Leonard, DB; Strand, TA; Patten, EA; Peterson, JM; Durhan, JH; Randall, VK; deLyon, TJ; Jensen, JE; Gorwitz, MD

HgCdZnTe quaternary materials for lattice-matched two-color detectors*JOURNAL OF ELECTRONIC MATERIALS*

- Skauli, T; Colin, T; Sjolie, R; Lovold, S

Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates*JOURNAL OF ELECTRONIC MATERIALS*

- Aqariden, F; Shih, HD; Turner, AM; Chandra, D; Liao, PK

Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B*JOURNAL OF ELECTRONIC MATERIALS*

- Chandra, D; Schaake, HF; Tregilgas, JH; Aqariden, F; Kinch, MA; Syllaois, AJ

Vacancies in Hg1-xCdxTe*JOURNAL OF ELECTRONIC MATERIALS*

- Zhao, LJ; Speck, JS; Rajavel, R; Jensen, J; Leonard, D; Strand, T; Hamilton, W

Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy*JOURNAL OF ELECTRONIC MATERIALS*

- Jowikowski, K; Rogalski, A

Effect of dislocations on performance of LWIR HgCdTe photodiodes*JOURNAL OF ELECTRONIC MATERIALS*

- Almeida, LA; Dhar, NK; Martinka, M; Dinan, JH

HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature*JOURNAL OF ELECTRONIC MATERIALS*

- Zhang, R; Bhat, I

Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy*JOURNAL OF ELECTRONIC MATERIALS*

- Sen, S; Rhiger, DR; Curtis, CR; Norton, PR

Extraction of mobile impurities from CdZnTe*JOURNAL OF ELECTRONIC MATERIALS*

- Tobin, SP; Hutchins, MA; Norton, PW

Composition and thickness control of thin LPE HgCdTe layers using X-ray diffraction*JOURNAL OF ELECTRONIC MATERIALS*

- Mainzer, N; Zolotoyabko, E

Percolation problem in boron - Implanted mercury cadmium telluride*JOURNAL OF ELECTRONIC MATERIALS*

- Lam, TT; Moore, CD; Forrest, RL; Goorsky, MS; Johnson, SM; Leonard, DB; Strand, TA; Delyon, TJ; Gorwitz, MD

Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe*JOURNAL OF ELECTRONIC MATERIALS*

- Kinch, MA

Fundamental physics of infrared detector materials*JOURNAL OF ELECTRONIC MATERIALS*

- Gordon, NT; Hall, RS; Jones, CL; Maxey, CD; Metcalfe, NE; Catchpole, RA; White, AM

MCP infrafed detectors with close to radiatively limited performance at 240 K in the 3-5 mu m band*JOURNAL OF ELECTRONIC MATERIALS*

- Velicu, S; Ashokan, R; Sivananthan, S

A model for dark current and multiplication in HgCdTe avalanche photodiodes*JOURNAL OF ELECTRONIC MATERIALS*

- Krishnamurthy, S; Casselman, TN

A detailed calculation of the Auger lifetime in p-type HgCdTe*JOURNAL OF ELECTRONIC MATERIALS*

- Kim, YH; Bae, SH; Lee, HC; Kim, CK

Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion*JOURNAL OF ELECTRONIC MATERIALS*

- Antoszewski, J; Musca, CA; Dell, JM; Faraone, L

Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion*JOURNAL OF ELECTRONIC MATERIALS*

- Haakenaasen, R; Colin, T; Steen, H; Trosdahl-Iversen, L

Electron beam induced current study of ion beam milling type conversion inmolecular beam epitaxy vacancy-doped CdxHg1-xTe*JOURNAL OF ELECTRONIC MATERIALS*

- Smith, EPG; Musca, CA; Redfern, DA; Dell, JM; Faraone, L

H-2-based dry plasma etching for mesa structuring of HgCdTe*JOURNAL OF ELECTRONIC MATERIALS*

- Kim, YH; Kim, TS; Redfern, DA; Musca, CA; Lee, HC; Kim, CK

Characteristics of gradually doped LWIR diodes by hydrogenation*JOURNAL OF ELECTRONIC MATERIALS*

- Menon, VM; Ram-Mohan, LR; Vurgaftman, I; Meyer, JR

TE- and TM-polarized optoelectronic properties of HgCdTe quantum wells*JOURNAL OF ELECTRONIC MATERIALS*

- Lee, TS; Garland, J; Grein, CH; Sumstine, M; Jandeska, A; Selamet, Y; Sivananthan, S

Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe*JOURNAL OF ELECTRONIC MATERIALS*

- Wang, L; Zhang, LH

SIMS quantification of as and in in Hg1-xCdxTe materials of different x values*JOURNAL OF ELECTRONIC MATERIALS*

- Bae, SH; Lee, SJ; Kim, YH; Lee, HC; Kim, CK

Analysis of 1/f noise in LWIR HgCdTe photodiodes*JOURNAL OF ELECTRONIC MATERIALS*

- Chandra, D; Aqariden, F; Frazier, J; Gutzler, S; Orent, T; Shih, WD

Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe*JOURNAL OF ELECTRONIC MATERIALS*

- Shaw, D

The incorporation and diffusivity of As in Hg0.8Cd0.2Te*SEMICONDUCTOR SCIENCE AND TECHNOLOGY*

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Documento generato il 08/08/20 alle ore 22:29:05