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La ricerca find articoli where soggetti phrase all words 'HG1-XCDXTE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 428 riferimenti
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    1. Phillips, J; Edwall, D; Lee, D; Arias, J
      Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    2. Varavin, VS; Kravchenko, AF; Sidorov, YG
      A study of galvanomagnetic phenomena in MBE-grown n-CdxHg1-xTe films

      SEMICONDUCTORS
    3. Brudnyi, VN; Grinyaev, SN
      Fermi level pinning and electrical properties of irradiated CdxHg1-xTe alloys

      SEMICONDUCTORS
    4. Huang, ZM; Zang, ZH; Jiang, CP; Chu, JH
      Refractive index enhancement effect in Hg1-xCdxTe near the fundamental gap

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    5. Huang, SH; Mo, YD
      Resonant Raman scattering of Hg1-xCdxTe

      ACTA PHYSICA SINICA
    6. Capper, P
      Bulk Bridgman growth of cadmium mercury telluride for IR applications

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    7. Butcher, KSA; Tansley, TL; Prince, K; Leech, PW
      Predeposition ultraviolet treatment for adhesion improvement of thin filmson mercury cadmium telluride

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    8. Piquette, EC; Zandian, M; Edwall, DD; Arias, JM
      MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations

      JOURNAL OF ELECTRONIC MATERIALS
    9. Daraselia, M; Garland, JW; Johs, B; Nathan, V; Sivananthan, S
      Improvement of the accuracy of the in-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures

      JOURNAL OF ELECTRONIC MATERIALS
    10. Edwall, D; Phillips, J; Lee, D; Arias, J
      Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry

      JOURNAL OF ELECTRONIC MATERIALS
    11. Baker, IM; Maxey, CD
      Summary of HgCdTe 2D array technology in the UK

      JOURNAL OF ELECTRONIC MATERIALS
    12. Redfern, DA; Thomas, JA; Musca, CA; Dell, JM; Faraone, L
      Diffusion length measurements in p-HgCdTe using laser beam induced current

      JOURNAL OF ELECTRONIC MATERIALS
    13. Velicu, S; Badano, G; Selamet, Y; Grein, CH; Faurie, JP; Sivananthan, S; Boieriu, P; Rafol, D; Ashokan, R
      HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

      JOURNAL OF ELECTRONIC MATERIALS
    14. Weiss, E; Klin, O; Benory, E; Kedar, E; Juravel, Y
      Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers

      JOURNAL OF ELECTRONIC MATERIALS
    15. Mitra, P; Case, FC; Glass, HL; Speziale, VM; Flint, JP; Tobin, SP; Norton, PW
      HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    16. Lee, H; Pearlstein, AJ
      Thermodynamically self-consistent approximations to the liquidus and solidus of Hg1-xCdxTe

      JOURNAL OF ELECTRONIC MATERIALS
    17. Smith, EPG; Winchester, KJ; Musca, CA; Dell, JM; Faraone, L
      A simplified fabrication process for HgCdTe photoconductive detectors using CH4/H-2 reactive-ion-etching-induced blocking contacts

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    18. Bhan, RK; Koul, SK; Gopal, V; Ashokan, R; Dhar, V; Basu, PK
      A new method to monitor composition or cut-off wavelength variations in HgCdTe photodiode arrays using current-voltage characteristics

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    19. Huang, H; Xu, JJ; Qiao, HJ; Wang, JY; Zhao, LJ; Zhang, XZ; Zhang, CZ; Zhang, GY; Ji, RB; Pan, SC
      Micro-photoluminescence and micro-Raman spectra of MOCVD Hg1-xCdxTe/Cd1-yZnyTe epitaxial films

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    20. Moravec, P; Grill, R; Franc, J; Varghova, R; Hoschl, P; Belas, E
      Galvanomagnetic and thermoelectric properties of p-Hg1-xCdxTe (x approximate to 0.22)

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    21. Rybka, AV; Leonov, SA; Prokhoretz, IM; Abyzov, AS; Davydov, LN; Kutny, VE; Rowland, MS; Smith, CF
      Influence of detector surface processing on detector performance

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    22. Belas, E; Grill, R; Franc, J; Moravec, P; Varghova, R; Hoschl, P; Sitter, H; Toth, AL
      Dynamics of native point defects in H-2 and Ar plasma-etched narrow gap (HgCd)Te

      JOURNAL OF CRYSTAL GROWTH
    23. Reig, C; Gomez-Garcia, CJ; Munoz, V
      A new approach to the crystal growth of Hg1-xMnxTe by the cold travelling heater method (CTHM)

      JOURNAL OF CRYSTAL GROWTH
    24. Skauli, T; Colin, T
      Accurate determination of the lattice constant of molecular beam epitaxialCdHgTe

      JOURNAL OF CRYSTAL GROWTH
    25. Jozwikowski, K
      Numerical modeling of fluctuation phenomena in semiconductor devices

      JOURNAL OF APPLIED PHYSICS
    26. Hlidek, P; Bok, J; Franc, J; Grill, R
      Refractive index of CdTe: Spectral and temperature dependence

      JOURNAL OF APPLIED PHYSICS
    27. Aqariden, F; Shih, HD; Kinch, MA; Schaake, HF
      Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy

      APPLIED PHYSICS LETTERS
    28. Jozwikowski, K
      Computer simulation of non-cooled long-wavelength multijunction (Cd,Hg)Te photodiodes

      INFRARED PHYSICS & TECHNOLOGY
    29. Rogalski, A
      Heterostructure infrared photovoltaic detectors

      INFRARED PHYSICS & TECHNOLOGY
    30. Bhan, RK; Dhar, V
      Effect of 300 K ambient background on C-V characteristics of HgCdTe MIS structures

      INFRARED PHYSICS & TECHNOLOGY
    31. Orlowski, N; Augustin, J; Golacki, Z; Janowitz, C; Manzke, R
      Direct evidence for the inverted band structure of HgTe

      PHYSICAL REVIEW B
    32. Vasil'ev, VV; Esaev, DG; Kravchenko, AF; Osadchii, VM; Suslyakov, AO
      Study of the effect of graded gap epilayers on the performance of CdxHg1-xTe photodiodes

      SEMICONDUCTORS
    33. Vlasenko, AI; Olikh, YM; Savkina, RK
      Charge carrier mobility in n-CdxHg1-xTe crystals subjected to dynamic ultrasonic stressing

      SEMICONDUCTORS
    34. Gasan-Zade, SG; Staryi, SV; Strikha, MV; Shepel'skii, GA
      Special features of photoelectric properties of p-CdxHg1-xTe crystals at low temperatures: The effects of the freezing-out of holes and elastic stress

      SEMICONDUCTORS
    35. Mainzer, N; Zolotoyabko, E
      Point defects and their diffusion in mercury cadmium telluride: Investigation based upon high-resolution x-ray diffraction

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    36. Chang, Y; Wang, XG; Tang, WG; Chu, JH
      Infrared photoluminescence from narrow gap Hg0.79CD0.21Te

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    37. Lu, HQ; Fang, JX
      Raman characterization of ion beam etched Hg1-xCdxTe surface

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    38. Ferret, P; Zanatta, JP; Hamelin, R; Cremer, S; Million, A; Wolny, M; Destefanis, G
      Status of the MBE technology at Leti LIR for the manufacturing of HgCdTe focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    39. Robinson, HG; Berding, MA; Hamilton, WJ; Kosai, K; DeLyon, T; Johnson, WB; Walker, BJ
      Enhanced diffusion and interdiffusion in HgCdTe from Fermi-level effects

      JOURNAL OF ELECTRONIC MATERIALS
    40. Rhiger, DR; Sen, S; Gordon, EE
      Strain relief in epitaxial HgCdTe by growth on a reticulated substrate

      JOURNAL OF ELECTRONIC MATERIALS
    41. Skauli, T; Colin, T; Sjolie, R; Lovold, S
      Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates

      JOURNAL OF ELECTRONIC MATERIALS
    42. Almeida, LA; Dhar, NK; Martinka, M; Dinan, JH
      HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

      JOURNAL OF ELECTRONIC MATERIALS
    43. Mainzer, N; Zolotoyabko, E
      Percolation problem in boron - Implanted mercury cadmium telluride

      JOURNAL OF ELECTRONIC MATERIALS
    44. Velicu, S; Ashokan, R; Sivananthan, S
      A model for dark current and multiplication in HgCdTe avalanche photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    45. Krishnamurthy, S; Casselman, TN
      A detailed calculation of the Auger lifetime in p-type HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    46. Antoszewski, J; Musca, CA; Dell, JM; Faraone, L
      Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

      JOURNAL OF ELECTRONIC MATERIALS
    47. Haakenaasen, R; Colin, T; Steen, H; Trosdahl-Iversen, L
      Electron beam induced current study of ion beam milling type conversion inmolecular beam epitaxy vacancy-doped CdxHg1-xTe

      JOURNAL OF ELECTRONIC MATERIALS
    48. Smith, EPG; Musca, CA; Redfern, DA; Dell, JM; Faraone, L
      H-2-based dry plasma etching for mesa structuring of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    49. Kim, YH; Kim, TS; Redfern, DA; Musca, CA; Lee, HC; Kim, CK
      Characteristics of gradually doped LWIR diodes by hydrogenation

      JOURNAL OF ELECTRONIC MATERIALS
    50. Lee, TS; Garland, J; Grein, CH; Sumstine, M; Jandeska, A; Selamet, Y; Sivananthan, S
      Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    51. Wang, L; Zhang, LH
      SIMS quantification of as and in in Hg1-xCdxTe materials of different x values

      JOURNAL OF ELECTRONIC MATERIALS
    52. Bae, SH; Lee, SJ; Kim, YH; Lee, HC; Kim, CK
      Analysis of 1/f noise in LWIR HgCdTe photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    53. Chandra, D; Aqariden, F; Frazier, J; Gutzler, S; Orent, T; Shih, WD
      Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    54. Chen, JK; Beraun, JE; Tzou, DY
      A dual-phase-lag diffusion model for predicting thin film growth

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    55. Rudyj, IO; Kurilo, IV; Frugynskyi, MS; Kuzma, M; Zawislak, J; Virt, IS
      Electron-difraction investigation of HgCdTe laser deposited films

      APPLIED SURFACE SCIENCE
    56. Leveque, P; Declemy, A; Renault, PO
      Influence of extended structural defects on the effective carrier concentration of p-type Hg0.78Cd0.22Te implanted with aluminium ions

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    57. Gorbach, TY; Matveeva, LA; Smertenko, PS; Svechnikov, SV; Venger, EF; Kuzma, M; Wisz, G; Ciach, R; Rakowska, A
      Probe microanalysis investigation and electroreflectance spectroscopy of Hg1-xCdxTePLD films on silicon patterned substrates

      THIN SOLID FILMS
    58. Kosyachenko, LA; Rarenko, IM; Sun, WG; Lu, ZX
      Charge transport mechanisms in HgMnTe photodiodes with ion etched p-n junctions

      SOLID-STATE ELECTRONICS
    59. Panich, AM; Doert, T
      Indirect nuclear exchange and electronic structure of Tl2Te3 semiconductor: Tl-203 and Tl-205 NMR study

      SOLID STATE COMMUNICATIONS
    60. Glazov, VM
      Structural inhomogeneity of melts in quasi-binary systems formed by copperchalcogenides

      RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY
    61. Moravec, P; Grill, R; Staif, P; Belas, E; Franc, J; Bok, J; Hoschl, P
      Seebeck coefficient of p-(HgCd)Te in natural temperature gradient

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    62. Jaksic, Z; Djuric, Z
      Optimised high-frequency performance of Auger-suppressed magnetoconcentration photoconductors

      MICROELECTRONICS JOURNAL
    63. Kumaresan, R; Gopalakrishnan, R; Babu, SM; Ramasamy, P; Kruger, D; Zaumseil, P
      X-ray photoelectron spectroscopic studies of electrodeposited mercury cadmium telluride semiconductor thin films

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    64. Liu, XH; Jie, WQ; Zhou, YH
      Numerical analysis of Cd1-xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique

      JOURNAL OF CRYSTAL GROWTH
    65. Liu, XH; Jie, WQ; Zhou, YH
      Numerical analysis on Hg1-xCdxTe growth by ACRT-VBM

      JOURNAL OF CRYSTAL GROWTH
    66. Chang, SJ; Su, YK; Juang, FS; Lin, CT; Chiang, CD; Cherng, YT
      Photo-enhanced native oxidation process for Hg0.8Cd0.2Te photoconductors

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    67. Glazov, VM
      Temperature dependence of viscosity and density of the melts of quasi-binary systems formed by copper chalcogenides

      HIGH TEMPERATURE
    68. Onodera, K; Ohba, H; Nagayama, S
      Quenching of (Cd,Mn,Hg)(Te,Se) polycrystals by the hot isostatic pressure method and crystal growth

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    69. Singh, KJ; Tsuchiya, Y
      The velocity of sound and compressibility in the melts of Hg-Te system

      EUROPEAN PHYSICAL JOURNAL B
    70. Rousiere, O; Lemoine, D; Folliot, H; Hinooda, S; Granger, R
      Two-dimensional electron systems in inversion layers of p-type Hg0.8Zn0.2Te metal-insulator-semiconductor structures

      EUROPEAN PHYSICAL JOURNAL B
    71. Li, JZ; Mantovani, JG; Patterson, JD
      Scanning tunneling optical spectroscopy in mercury cadmium telluride and related compounds

      INFRARED PHYSICS & TECHNOLOGY
    72. Djuric, Z; Jaksic, Z; Randjelovic, D; Dankovic, T; Ehrfeld, W; Schmidt, A
      Enhancement of radiative lifetime in semiconductors using photonic crystals

      INFRARED PHYSICS & TECHNOLOGY
    73. Yang, B; Aqariden, F; Grein, CH; Jandaska, A; Lee, TS; Nemani, A; Rujirawat, S; Shi, XH; Sumstine, M; Velicu, S; Sivananthan, S
      Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    74. Vlasenko, AI; Olikh, YM; Savkina, RK
      Acoustostimulated activation of bound defects in CdHgTe alloys

      SEMICONDUCTORS
    75. Osadchii, VM; Suslyakov, AO; Vasil'ev, VV; Dvoretsky, SA
      Effective charge carrier lifetime in CdHgTe variable-gap structures

      SEMICONDUCTORS
    76. Vlasenko, AI; Vlasenko, ZK; Lyubchenko, AV
      Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge

      SEMICONDUCTORS
    77. Gui, YS; Zheng, GZ; Guo, SL; Cai, Y; Chu, JH; Tang, DY
      The electrical parameter analysis for Hg1-xCdxTe photoconductors

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    78. Hu, XW; Li, XY; Wang, Q; Lu, HQ; Zhao, J; Fang, JX; Zhang, SK
      The influence of defect levels on the device performance in short wavelength Hg1-xCdxTe photodiodes

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    79. Hu, XW; Zhao, J; Lu, HQ; Li, XY; Fang, JX
      Gamma irradiation on room temperature short-wavelength HgCdTe photovoltaicdevice studied by admittance spectroscopy

      WULI XUEBAO
    80. He, L; Yang, JR; Wang, SL; Wu, Y; Fang, WZ
      Recent progress in molecular beam epitaxy of HgCdTe

      ADVANCED MATERIALS
    81. Koo, BH; Wang, JF; Ishikawa, Y; Isshiki, M
      Effect of lattice match and Zn addition on the properties of Hg1-x(Cd1-yZny)(x)Te epilayers grown by isothermal vapor phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    82. Smith, EPG; Musca, CA; Redfern, DA; Dell, JM; Faraone, L
      Reactive ion etching for mesa structuring in HgCdTe

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    83. Hutchins, MA; Smith, FTJ; Tobin, SP; Norton, PW
      Improved operability in Hg1-xCdxTe detector arrays

      JOURNAL OF ELECTRONIC MATERIALS
    84. Rogalski, A; Ciupa, R
      Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    85. Vasilevskiy, MI; Belogorokhov, AI; Gomes, MJM
      The effects of short-range order and natural microinhomogeneities on the FIR optical properties of CdxHg1-xTe

      JOURNAL OF ELECTRONIC MATERIALS
    86. de Lyon, TJ; Jensen, JE; Gorwitz, MD; Cockrum, CA; Johnson, SM; Venzor, GM
      MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

      JOURNAL OF ELECTRONIC MATERIALS
    87. Daraselia, M; Grein, CH; Rujirawat, S; Yang, B; Sivananthan, S; Aqariden, F; Shih, HD
      In-situ monitoring of temperature and alloy composition of Hg1-xCdxTe using FTIR spectroscopic techniques

      JOURNAL OF ELECTRONIC MATERIALS
    88. Aqariden, F; Duncan, WM; Shih, HD; Almeida, LA; Bevan, MJ
      Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    89. Wang, L; Zhang, LH; Li, J
      New techniques in SIMS analysis of HgCdTe materials

      JOURNAL OF ELECTRONIC MATERIALS
    90. Berding, MA; Sher, A
      Arsenic incorporation during MBE growth of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    91. O'Dette, P; Tarnowski, G; Lukach, V; Krueger, M; Lovecchio, P
      Optimization of dry etch process conditions for HgCdTe detector arrays

      JOURNAL OF ELECTRONIC MATERIALS
    92. Becker, CR; Latussek, V; Li, M; Pfeuffer-Jeschke, A; Landwehr, G
      Valence band offset in HgTe/Hg1-xCdxTe superlattices

      JOURNAL OF ELECTRONIC MATERIALS
    93. Eddy, CR; Leonhardt, D; Shamamian, VA; Meyer, JR; Hoffman, CA; Butler, JE
      Characterization of the CH4/H-2/Ar high density plasma etching process forHgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    94. Ge, YR; Wiedemeier, H
      Transient behavior of Hg1-xCdxTe film growth on (111)B CdTe substrates by chemical vapor transport

      JOURNAL OF ELECTRONIC MATERIALS
    95. Rolland, S; Karrari, K; Granger, R; Triboulet, R
      P-to-n conversion in Hg1-xZnxTe

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    96. Tarasov, GG; Mazur, YI; Lisitsa, MP; Lavoric, SR; Rakitin, AS; Tomm, JW; Litvinchuk, AP
      Far-infrared reflectivity study of lattice dynamics of narrow-gap HgCdMnTesemiconductors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    97. Leveque, P; Declemy, A
      A simple way to analyze infrared reflectivity spectra of p-type Hg0.78Cd0.22Te implanted in various conditions

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    98. Romashko, LN; Ovsyuk, VN
      The charge carrier transport mechanisms in the diffusion n-p junctions based on MBE CdxHg1-xTe

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    99. Tian, Y; Zhang, BL; Zhou, TM; Jiang, H; Jin, JX
      The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    100. Nair, JP; Jayakrishnan, R; Chaure, NB; Gohkale, S; Lobo, A; Kulkarni, SK; Pandey, RK
      Deposition and characterization of CdxHg1-xTe films electroplated from a nonaqueous bath

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS


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Documento generato il 09/08/20 alle ore 20:29:33