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La ricerca find articoli where soggetti phrase all words 'HETEROSTRUCTURE LASERS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 157 riferimenti
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    1. Barrios, CA; Messmer, ER; Holmgren, M; Risberg, A; Halonen, J; Lourdudoss, S
      Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe

      JOURNAL OF ELECTRONIC MATERIALS
    2. Aigle, M; Pascher, H; Kim, H; Tarhan, E; Mayur, AJ; Sciacca, MD; Ramdas, AK; Springholz, G; Bauer, G
      Optical phonons in Pb1-xEuxTe epilayers and PbTe/EuTe superlattices: Berreman effect - art. no. 035316

      PHYSICAL REVIEW B
    3. Becker, C; Sirtori, C
      Lateral current spreading in unipolar semiconductor lasers

      JOURNAL OF APPLIED PHYSICS
    4. Asryan, LV; Grundmann, M; Ledentsov, NN; Stier, O; Suris, RA; Bimberg, D
      Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    5. Chu, SNG; Chand, N; Joyce, WB; Parayanthal, P; Wilt, DP
      Generic degradation mechanism for 980 nm InxGa1-xAs/GaAs strained quantum-well lasers

      APPLIED PHYSICS LETTERS
    6. Koley, B; King, O; Johnson, FG; Saini, SS; Dagenais, M
      Accelerated and reproducible oxidation of strain-compensated short-period superlattice structures for incorporation in InP based devices

      APPLIED PHYSICS LETTERS
    7. Felix, CL; Bewley, WW; Vurgaftman, I; Bartolo, RE; Stokes, DW; Meyer, JR; Yang, MJ; Lee, H; Menna, RJ; Martinelli, RU; Garbuzov, DZ; Connolly, JC; Maiorov, M; Sugg, AR; Olsen, GH
      Mid-infrared W quantum-well lasers for noncryogenic continuous-wave operation

      APPLIED OPTICS
    8. Corbett, KA; Hamilton, MW
      Comparison of the bifurcation scenarios predicted by the single-mode and multimode semiconductor laser rate equations

      PHYSICAL REVIEW E
    9. Krier, A; Krier, SE; Labadi, Z
      Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    10. Lane, B; Tong, S; Diaz, J; Wu, Z; Razeghi, M
      High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 mu m

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    11. Vasil'ev, PP; White, IH; Gowar, J
      Fast phenomena in semiconductor lasers

      REPORTS ON PROGRESS IN PHYSICS
    12. Fukuda, M
      Historical overview and future of optoelectronics reliability for optical fiber communication systems

      MICROELECTRONICS RELIABILITY
    13. Palosz, W
      Physical vapor transport of lead telluride

      JOURNAL OF CRYSTAL GROWTH
    14. Joullie, A
      New developments in mid-infrared Sb-based lasers

      JOURNAL DE PHYSIQUE IV
    15. Phillips, AF; Sweeney, SJ; Adams, AR; Thijs, PJA
      The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    16. Tsai, CY; Chen, CH; Sung, TL; Tsai, CY; Rorison, JM
      Theoretical modeling of the small-signal modulation response of carrier and lattice temperatures with the dynamics of nonequilibrium optical phonons in semiconductor lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    17. Iwai, N; Mukaihara, T; Yamanaka, N; Kumada, K; Shimizu, H; Kasukawa, A
      High-performance 1.3-mu m InAsP strained-layer quantum-well ACIS (Al-oxideconfined inner stripe) lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    18. Heerlein, J; Gruber, S; Grabherr, M; Jager, R; Unger, P
      Highly efficient laterally oxidized lambda=950 nm InGaAs-AlGaAs single-mode lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    19. Park, HS; Schulz, S; Wessel, H; Roesky, HW
      First approach to an AlSb layer from the single-source precursors [Et2AlSb(SiMe3)(2)](2) and [(Bu2AlSb)-Bu-i(SiMe3)(2)](2)

      CHEMICAL VAPOR DEPOSITION
    20. Kallstenius, T; Backstrom, J; Smith, U; Stoltz, B
      On the degradation of InGaAsP/InP-based bulk lasers

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    21. Cuminal, Y; Baranov, AN; Bec, D; Grech, P; Garcia, M; Boissier, G; Joullie, A; Glastre, G; Blondeau, R
      Room-temperature 2.63 mu m GaInAsSb/GaSb strained quantum-well laser diodes

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    22. Schwarzl, T; Heiss, W; Kocher-Oberlehner, G; Springholz, G
      CH4/H-2 plasma etching of IV-VI semiconductor nanostructures

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    23. Taguchi, A; Kageshima, H
      Diffusion and stability of oxygen in GaAs and AlAs

      PHYSICAL REVIEW B-CONDENSED MATTER
    24. Krenn, H; Herbst, W; Pascher, H; Ueta, Y; Springholz, G; Bauer, G
      Interband Faraday and Kerr rotation and magnetization of Pb1-xEuxTe in theconcentration range O < x <= 1

      PHYSICAL REVIEW B-CONDENSED MATTER
    25. Ueda, O
      Reliability issues in III-V compound semiconductor devices: optical devices and GaAs-based HBTs

      MICROELECTRONICS RELIABILITY
    26. Krier, A; Labadi, Z; Hammiche, A
      InAsSbP quantum dots grown by liquid phase epitaxy

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    27. Bleuse, J; Bonnet-Gamard, J; Mula, G; Magnea, N; Pautrat, JL
      Laser emission in HgCdTe in the 2-3.5 mu m range

      JOURNAL OF CRYSTAL GROWTH
    28. Flynn, EJ
      A note on the semiconductor laser equivalent circuit

      JOURNAL OF APPLIED PHYSICS
    29. Hayakawa, T; Wada, M; Yamanaka, F; Asano, H; Kuniyasu, T; Ohgoh, T; Fukunaga, T
      Effects of broad-waveguide structure in 0.8 mu m high-power InGaAsP/InGaP/AlGaAs lasers

      APPLIED PHYSICS LETTERS
    30. Bewley, WW; Felix, CL; Vurgaftman, I; Stokes, DW; Aifer, EH; Olafsen, LJ; Meyer, JR; Yang, MJ; Shanabrook, BV; Lee, H; Martinelli, RU; Sugg, AR
      High-temperature continuous-wave 3-6.1 mu m "W'' lasers with diamond-pressure-bond heat sinking

      APPLIED PHYSICS LETTERS
    31. Krier, A; Labadi, Z; Richardson, J
      Rapid slider LPE growth of InAs quantum wells

      IEE PROCEEDINGS-OPTOELECTRONICS
    32. VURGAFTMAN I; MEYER JR
      HIGH-TEMPERATURE HGTE CDTE MULTIPLE-QUANTUM-WELL LASERS/

      OPTICS EXPRESS
    33. HOFSTETTER D; MAISENHOLDER B; ZAPPE HP
      QUANTUM-WELL INTERMIXING FOR FABRICATION OF LASERS AND PHOTONIC INTEGRATED-CIRCUITS

      IEEE journal of selected topics in quantum electronics
    34. AHN D; PARK SH; KIM TI
      NON-MARKOVIAN GAIN OF STRAINED-LAYER WURTZITE GAN QUANTUM-WELL LASERSWITH MANY-BODY EFFECTS

      IEEE journal of selected topics in quantum electronics
    35. LAU PK; MAKINO T
      EFFECTS OF P-DOPING AND NONRADIATIVE PROCESSES ON THE CURRENT-VOLTAGECHARACTERISTICS OF LONG-WAVELENGTH QUANTUM-WELL LASER-DIODES

      Journal of applied physics
    36. LAU PK; MAKINO T
      CURRENT-VOLTAGE CHARACTERISTICS OF LONG-WAVELENGTH QUANTUM-WELL LASER-DIODES

      Journal of applied physics
    37. Chou, LJ; Hsieh, KC; Wohlert, DE; Cheng, KY; Finnegan, N
      Formation of amorphous aluminum oxide and gallium oxide on InP substrates by water vapor oxidation

      JOURNAL OF APPLIED PHYSICS
    38. KIM TG; PARK KH; HWANG SM; KIM Y; KIM EK; MIN SK; LEEM SJ; JEON JI; PARK JH; CHANG WSC
      PERFORMANCE OF GAAS-ALGAAS V-GROOVED INNER STRIPE QUANTUM-WELL WIRE LASERS WITH DIFFERENT CURRENT BLOCKING CONFIGURATIONS

      IEEE journal of quantum electronics
    39. KAROUTA F; SMALBRUGGE E; VANDERVLEUTEN WC; GAILLARD S; ACKET GA
      FABRICATION OF SHORT GAAS WET-ETCHED MIRROR LASERS AND THEIR COMPLEX SPECTRAL BEHAVIOR

      IEEE journal of quantum electronics
    40. KAKIMOTO S; WATANABE H
      THRESHOLD CURRENT, DIFFERENTIAL GAIN, AND RELAXATION RESONANCE FREQUENCY OF 1.55-MU-M BULK AND MQW DFB LASER-DIODES

      IEEE journal of quantum electronics
    41. HEERLEIN J; GRUBER S; UNGER P
      MODE ANALYSIS OF SEMICONDUCTOR-LASERS USING LATERAL CONFINEMENT BY NATIVE-OXIDE LAYERS

      IEEE journal of quantum electronics
    42. CHAN KS; LI EH; CHAN MCY
      OPTICAL GAIN OF INTERDIFFUSED INGAAS-GAAS AND ALGAAS-GAAS QUANTUM-WELLS

      IEEE journal of quantum electronics
    43. LOURDUDOSS S; KJEBON O
      HYDRIDE VAPOR-PHASE EPITAXY REVISITED

      IEEE journal of selected topics in quantum electronics
    44. COLEMAN JJ; LAMMERT RM; OSOWSKI ML; JONES AM
      PROGRESS IN INGAAS-GAAS SELECTIVE-AREA MOCVD TOWARD PHOTONIC INTEGRATED-CIRCUITS

      IEEE journal of selected topics in quantum electronics
    45. MACDOUGAL MH; DAPKUS PD; BOND AE; LIN CK; GESKE J
      DESIGN AND FABRICATION OF VCSELS WITH ALXOY-GAAS DBRS

      IEEE journal of selected topics in quantum electronics
    46. AOKI M; KOMORI M; TSUCHIYA T; SATO H; NAKAHARA K; UOMI K
      INP-BASED REVERSED-MESA RIDGE-WAVE-GUIDE STRUCTURE FOR HIGH-PERFORMANCE LONG-WAVELENGTH LASER-DIODES

      IEEE journal of selected topics in quantum electronics
    47. ELISEEV PG; POPOV YM
      SEMICONDUCTOR-LASERS

      Quantum electronics
    48. SMOLYAKOV GA; OVCHINNIKOV SV
      THE INFLUENCE OF THERMAL EFFECTS ON SPATIAL CHARACTERISTICS OF RADIATION OF INJECTION STRIPE LASERS

      Laser physics
    49. MACDOUGAL MH; DAPKUS PD
      WAVELENGTH SHIFT OF SELECTIVELY OXIDIZED ALXOY-ALGAAS-GAAS DISTRIBUTED BRAGG REFLECTORS

      IEEE photonics technology letters
    50. VAYA PR; RAVI K
      THERMAL-ANALYSIS OF SEMICONDUCTOR-LASERS

      International journal of optoelectronics
    51. ROMERO MJ; ARAUJO D; LAMBKIN JD; GARCIA R
      EBIC MODE CHARACTERIZATION OF TRANSPORT-PROPERTIES ON LASER HETEROSTRUCTURES

      Materials science & engineering. B, Solid-state materials for advanced technology
    52. BUIJS M; HABERERN KW; MARSHALL T; GAINES JM; LAW KK; BAUDE PF; MILLER TJ; HAASE MA; HAUGEN GM
      DEVICE CHARACTERISTICS OF GREEN II-VI SEMICONDUCTOR-LASERS

      Materials science & engineering. B, Solid-state materials for advanced technology
    53. STRECKER BN; MCCANN PJ; FANG XM; HAUENSTEIN RJ; OSTEEN M; JOHNSON MB
      LPE GROWTH OF CRACK-FREE PBSE LAYERS ON SI(100) USING MBE-GROWN PBSE BAF2/CAF2 BUFFER LAYERS/

      Journal of electronic materials
    54. NAKWASKI W; OSINSKI M
      ON THE THERMAL-RESISTANCE OF VERTICAL-CAVITY SURFACE-EMITTING LASERS

      Optical and quantum electronics
    55. LOURDUDOSS S; HOLZ R
      FABRICATION AND I-V-T BEHAVIOR OF N-GAAS SEMI-INSULATING GAINP-FE/N-GAAS STRUCTURES/

      Journal of crystal growth
    56. LI AZ; ZHAO Y; ZHENG YL; CHEN GT; RU GP; SHEN WZ; ZHONG JQ
      MBE GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINASSB ALGAASSB STRAINED MULTIPLE-QUANTUM-WELL STRUCTURES/

      Journal of crystal growth
    57. VALADARES EC; CURY LA; MATINAGA FM; MOREIRA MVB
      INTERFACE FORM BIREFRINGENCE IN NATIVE OXIDED MICROCAVITIES

      Journal of applied physics
    58. HEREMANS P; KUIJK M; WINDISCH R; VANDERHAEGEN J; DENEVE H; VOUNCKX R; BORGHS G
      ANGULAR SPECTROSCOPIC ANALYSIS - AN OPTICAL CHARACTERIZATION TECHNIQUE FOR LATERALLY OXIDIZED ALGAAS LAYERS

      Journal of applied physics
    59. HOLONYAK N
      THE SEMICONDUCTOR-LASER - A 35-YEAR PERSPECTIVE

      Proceedings of the IEEE
    60. KIDOGUCHI I; ADACHI H; KAMIYAMA S; FUKUHISA T; MANNOH M; TAKAMORI A
      LOW-NOISE 65O-NM-BAND ALGAINP VISIBLE LASER-DIODES WITH A HIGHLY DOPED SATURABLE ABSORBING LAYER

      IEEE journal of quantum electronics
    61. CHOW WW; CHOQUETTE KD; CRAWFORD MH; LEAR KL; HADLEY GR
      DESIGN, FABRICATION, AND PERFORMANCE OF INFRARED AND VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS

      IEEE journal of quantum electronics
    62. PRATT AR; TAKAMORI T; KAMIJOH I
      PHOTOLUMINESCENCE OF INGAAS GAAS SINGLE-QUANTUM-WELL ADJACENT TO A SELECTIVELY OXIDIZED ALAS LAYER/

      Applied physics letters
    63. SHIN JH; SHIN HE; LEE YH
      EFFECT OF CARRIER DIFFUSION IN OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS DETERMINED FROM LATERAL SPONTANEOUS EMISSION

      Applied physics letters
    64. ADACHI H; KIDOGUCHI I; FUKUHISA T; TANAKA K; MANNOH M; TAKAMORI A
      REDUCTION OF ASPECT RATIO IN 650 NM-BAND SELF-SUSTAINED-PULSING LASERS WITH SATURABLE-ABSORBING LAYER

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. LAMBRECHT A; TSCHIRSCHWITZ M; GRISAR R; SCHIESSL U; WOLF J; LEMKE D
      SUBTHRESHOLD OPERATED LEAD SALT LASERS FOR CALIBRATION OF IR-ASTRONOMY DETECTORS

      Infrared physics & technology
    66. BUUS J; BOTEZ D
      ANALYTICAL RESULTS FOR THE CONFINEMENT FACTOR OF ANTIGUIDES

      IEEE photonics technology letters
    67. KIM JR; JONES KS
      DEGRADATION OF II-VI ZNSE-BASED SINGLE-QUANTUM-WELL LIGHT-EMITTING DEVICES

      Critical reviews in solid state and materials sciences
    68. LEE CC; CHIEN DH
      THE EFFECT OF BONDING WIRES ON LONGITUDINAL TEMPERATURE PROFILES OF LASER-DIODES

      Journal of lightwave technology
    69. ADACHI H; KAMIYAMA S; KIDOGUCHI I
      CURRENT SPREADING EFFECTS IN 680-NM-BAND SELF-SUSTAINED PULSATING ALGAINP VISIBLE LASER-DIODES

      Optical and quantum electronics
    70. YOSHIDA J; KISHINO K; JANG DH; NAHM S; NOMURA I; KIKUCHI A
      SELF-ORGANIZATION MECHANISM OF GAINP QUANTUM WIRES IN (GAP)(M) (INP)(M) SHORT-PERIOD BINARY SUPERLATTICES FOR GAINP/ALINP MULTI-QUANTUM-WIRE (MQWR) LASERS/

      Optical and quantum electronics
    71. GEIST F; PASCHER H; KRIECHBAUM M; FRANK N; BAUER G
      MAGNETOOPTICAL PROPERTIES OF DILUTED MAGNETIC PBSE PB1-XMNXSE SUPERLATTICES/

      Physical review. B, Condensed matter
    72. WEGSCHEIDER W; PFEIFFER LN; WEST KW; LITTLEWOOD P; NARAYAN O; HAGN M; DIGNAM MM; LEIBENGUTH RE
      STRONG MAGNETIC-FIELD DEPENDENCE OF LASER-EMISSION FROM QUANTUM WIRESFORMED BY CLEAVED EDGE OVERGROWTH

      Solid-state electronics
    73. AMANO C; RUDRA A; GRUNBERG P; CARLIN JF; ILEGEMS M
      GROWTH TEMPERATURE-DEPENDENCE OF THE INTERFACET MIGRATION IN CHEMICALBEAM EPITAXY OF INP ON NONPLANAR SUBSTRATES

      Journal of crystal growth
    74. CHEN EI; HOLONYAK N; RIES MJ
      PLANAR DISORDER-DEFINED AND NATIVE-OXIDE-DEFINED PHOTOPUMPED ALAS-GAAS SUPERLATTICE MINIDISK LASERS

      Journal of applied physics
    75. SWAMINATHAN V; REYNOLDS CL; GEVA M
      EFFECT OF ZN ON THE ELECTROOPTICAL CHARACTERISTICS OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN 1.3-MU-M INGAASP INP LASERS/

      Electronics Letters
    76. ISLAM MR; DUPUIS RD; HOLMES AL; GARDNER NF; CURTIS AP; STILLMAN GE; BAKER JE
      ENHANCED LUMINESCENCE FROM INALP-INGAP QUANTUM-WELLS WITH NATIVE-OXIDE WINDOWS

      Electronics Letters
    77. BOND AE; LIN CK; MACDOUGAL MH; DAPKUS PD; KAVIANI K; ADAMCZYK O; NOTTENBURG R
      BACKGATING REDUCTION IN MESFETS USING AN ALAS NATIVE-OXIDE BUFFER LAYER

      Electronics Letters
    78. TAKAMORI T; TAKEMASA K; KAMIJOH T
      INTERFACE STRUCTURE OF SELECTIVELY OXIDIZED ALAS GAAS/

      Applied physics letters
    79. KIM JH; LIM DH; KIM KS; YANG GM; LIM KY; LEE HJ
      LATERAL WET OXIDATION OF ALXGA1-XAS-GAAS DEPENDING ON ITS STRUCTURES

      Applied physics letters
    80. SUMMERS HD; REES P
      EXPERIMENTAL INVESTIGATION OF THE DIFFERENTIAL GAIN IN SEMICONDUCTOR-LASERS AND ITS INFLUENCE ON Q-SWITCHING PERFORMANCE

      Applied physics letters
    81. GUHA S; AGAHI F; PEZESHKI B; KASH JA; KISKER DW; BOJARCZUK NA
      MICROSTRUCTURE OF ALGAAS-OXIDE HETEROLAYERS FORMED BY WET OXIDATION

      Applied physics letters
    82. RIES MJ; CHEN EI; HOLONYAK N
      PHOTOPUMPED LASER OPERATION OF A PLANAR DISORDER-DEFINED AND NATIVE-OXIDE-DEFINED ALAS-GAAS PHOTONIC LATTICE

      Applied physics letters
    83. RIES MJ; CHEN EI; HOLONYAK N; IOVINO GM; MINERVINI AD
      PLANAR NATIVE-OXIDE-BASED ALGAAS-GAAS-INGAAS QUANTUM-WELL MICRODISK LASERS

      Applied physics letters
    84. HASEGAWA Y; EGAWA T; JIMBO T; UMENO M
      SUPPRESSION OF [100]DARK-LINE DEFECT GROWTH IN ALGAAS INGAAS SINGLE-QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    85. MANTZ AW
      A REVIEW OF SPECTROSCOPIC APPLICATIONS OF TUNABLE SEMICONDUCTOR-LASERS

      SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
    86. TACKE M
      NEW DEVELOPMENTS AND APPLICATION OF TUNABLE IR LEAD SALT LASERS

      Infrared physics & technology
    87. HALL DC; GOLDBERG L
      INTERFEROMETRIC NEAR-FIELD IMAGING TECHNIQUE FOR PHASE AND REFRACTIVE-INDEX PROFILING IN LARGE-AREA PLANAR-WAVE-GUIDE OPTOELECTRONIC DEVICES

      IEEE journal of selected topics in quantum electronics
    88. SHIMA A; KIZUKI H; TAKEMOTO A; KARAKIDA S; MIYASHITA M; NAGAI Y; KAMIZATO T; SHIGIHARA K; ADACHI A; OMURA E; OTSUBO M
      0.78- AND 0.98-MU-M RIDGE-WAVE-GUIDE LASERS BURIED WITH ALGAAS CONFINEMENT LAYER SELECTIVELY GROWN BY CHLORIDE-ASSISTED MOCVD

      IEEE journal of selected topics in quantum electronics
    89. ACKERMAN DA; SHTENGEL GE; HYBERTSEN MS; MORTON PA; KAZARINOV RF; TANBUNEK T; LOGAN RA
      ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS

      IEEE journal of selected topics in quantum electronics
    90. EVANS JD; SIMMONS JG; THOMPSON DA; PUETZ N; MAKINO T; CHIK G
      AN INVESTIGATION INTO THE TEMPERATURE SENSITIVITY OF STRAINED AND UNSTRAINED MULTIPLE-QUANTUM-WELL, LONG-WAVELENGTH LASERS - NEW INSIGHT AND METHODS OF CHARACTERIZATION

      IEEE journal of selected topics in quantum electronics
    91. BEWTRA N; SUDA DA; TAN GL; CHATENOUD F; XU JM
      MODELING OF QUANTUM-WELL LASERS WITH ELECTRO-OPTO-THERMAL INTERACTION

      IEEE journal of selected topics in quantum electronics
    92. NGUYEN LVT; LOWERY AJ; GURNEY PCR; NOVAK D
      A TIME-DOMAIN MODEL FOR HIGH-SPEED QUANTUM-WELL LASERS INCLUDING CARRIER TRANSPORT EFFECTS

      IEEE journal of selected topics in quantum electronics
    93. OSINSKI M; NAKWASKI W
      THERMAL-ANALYSIS OF CLOSELY-PACKED 2-DIMENSIONAL ETCHED-WELL SURFACE-EMITTING LASER ARRAYS

      IEEE journal of selected topics in quantum electronics
    94. HAN H; FORBES DV; COLEMAN JJ
      SELF-ALIGNED HIGH-QUALITY TOTAL INTERNAL-REFLECTION MIRRORS

      IEEE photonics technology letters
    95. MACDOUGAL MH; HUMMEL SG; DAPKUS PD; ZHAO HM; CHENG Y
      EPITAXIAL (AL,GA)INP OXIDE DISTRIBUTED BRAGG REFLECTORS FOR USE IN VISIBLE-WAVELENGTH OPTICAL-DEVICES

      IEEE photonics technology letters
    96. ADACHI H; KAMIYAMA S; KIDOGUCHI I; UENOYAMA T
      SELF-SUSTAINED PULSATION IN 650-NM-BAND ALGAINP VISIBLE-LASER DIODES WITH HIGHLY DOPED SATURABLE ABSORBING LAYER

      IEEE photonics technology letters
    97. CHOQUETTE KD; LEAR KL; SCHNEIDER RP; GEIB KM; FIGIEL JJ; HULL R
      FABRICATION AND PERFORMANCE OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS

      IEEE photonics technology letters
    98. JIANG ZP; TSANG HK; MCCALL MW
      NUMERICAL-SIMULATION OF HIGH-POWER FILAMENT-FREE OPERATION FROM DOUBLE TAPERED SEMICONDUCTOR-LASER DIODES

      International journal of optoelectronics
    99. BARWOLFF A; PUCHERT R; ENDERS P; MENZEL U; ACKERMANN D
      ANALYSIS OF THERMAL-BEHAVIOR OF HIGH-POWER SEMICONDUCTOR-LASER ARRAYSBY MEANS OF THE FINITE-ELEMENT METHOD (FEM)

      Journal of thermal analysis
    100. BAUER G; KRIECHBAUM M; SHI Z; TACKE M
      IV-VI QUANTUM-WELLS FOR INFRARED-LASERS

      Journal of nonlinear optical physics and materials


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Documento generato il 20/10/20 alle ore 19:48:47