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La ricerca find articoli where soggetti phrase all words 'HETEROSTRUCTURE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 1134 riferimenti
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    1. Liu, K; El-Ghazaly, SM; Deshpande, MR; Nair, V; El-Zein, N; Goronkin, H
      Active antennas incorporating tunnel diodes - Large signal model approach

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    2. Kroemer, H
      Quasi-electric fields and band offsets: Teaching electrons new tricks (Nobel lecture)

      CHEMPHYSCHEM
    3. Guo, Y; Wang, B; Gu, BL; Kawazoe, Y
      Asymmetry and separation of spin tunneling time in ZnSe/Zn1-xMnxSe multilayers

      EUROPEAN PHYSICAL JOURNAL B
    4. Zhai, F; Guo, Y; Gu, BL
      Coupling effects of layers on spin transport in ZnSe/Zn1-xMnxSe heterostructures

      EUROPEAN PHYSICAL JOURNAL B
    5. Benjelloun, M; Cool, P; Linssen, T; Vansant, EF
      Acidic porous clay heterostructures: study of their cation exchange capacity

      MICROPOROUS AND MESOPOROUS MATERIALS
    6. Hirayama, Y; Muraki, K; Kawaharazuka, A; Hashimoto, K; Saku, T
      Backgated layers and nanostructures

      PHYSICA E
    7. Lough, BC; Lee, SP; Lewis, RA; Zhang, C
      Numerical calculation of thermionic cooling efficiency in a double-barriersemiconductor heterostructure

      PHYSICA E
    8. Meisels, R; Dybko, K; Ziouzia, F; Kuchar, F; Deutschmann, R; Abstreiter, G; Hein, G; Pierz, K
      Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

      PHYSICA E
    9. Kamatani, T; Akai, H
      Electronic structure of superlattices of II-VI/III-V diluted magnetic semiconductors

      PHYSICA E
    10. Narita, K; Shirai, M
      Electronic and magnetoresistive properties of MnAs(0001)/GaAs(111) heterostructures

      PHYSICA E
    11. Nitta, J; Hu, CM; Jensen, A; Hansen, JB; Takayanagi, H
      Spin injection and detection experiment in a two dimensional electron gas with inter-digital-ferromagnetic contacts

      PHYSICA E
    12. Johnson, M
      Spin injection and detection in a ferromagnetic metal/2DEG structure

      PHYSICA E
    13. Razeghi, M; Erdtmann, M; Jelen, C; Guastavinos, F; Brown, GJ; Park, YS
      Development of quantum well infrared photodetectors at the Center for Quantum Devices

      INFRARED PHYSICS & TECHNOLOGY
    14. Kawazu, Z; Tashiro, Y; Shima, A; Suzuki, D; Nishiguchi, H; Yagi, T; Omura, E
      Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    15. Ghosh, S; Lenihan, AS; Dutt, MVG; Qasaimeh, Q; Steel, DG; Bhattacharya, P
      Nonlinear optical and electro-optic properties of InAs/GaAs self-organizedquantum dots

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    16. Woodall, P; Bouzehouane, K; Marcilhac, B; Crete, DG; Jacquet, E; Mage, JC; Contour, JP
      Epitaxial YBa2Cu3O7-delta/SrTiO3 heterostructures grown on LaAlO3 substrate by pulsed laser deposition for voltage tunable microwave filter applications

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    17. Ohiso, Y; Okamoto, H; Iga, R; Kishi, K; Tateno, K; Amano, C
      High performance of 1.55-mu m buried-heterostructure vertical-cavity surface-emitting lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    18. Zhou, YG; Shen, B; Liu, J; Zhou, HM; Yu, HQ; Zhang, R; Shi, Y; Zheng, YD
      Extraction of polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics

      ACTA PHYSICA SINICA
    19. Li, GH; Zhou, SP; Xu, DM
      Research on the dynamical behaviors of GaAs/AlGaAs heterostructures

      ACTA PHYSICA SINICA
    20. Wang, H; Yu, J; Dong, XM; Wang, YB; Zhou, WL; Zhao, JH; Zhou, DX
      Preparation and characterization of the Au/PZT/BIT/p-Si heterostructure

      ACTA PHYSICA SINICA
    21. Matyshevska, OP; Karlash, AY; Shtogun, YV; Benilov, A; Kirgizov, Y; Gorchinskyy, KO; Buzaneva, EV; Prylutskyy, YI; Scharff, P
      Self-organizing DNA/carbon nanotube molecular films

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    22. Nedev, N; Georgiev, SS; Sueva, D; Smirnov, N; Toneva, A
      Carrier transport in a position sensitive detector based on an ITO/a-Si : H/Pd structure

      SENSORS AND ACTUATORS A-PHYSICAL
    23. Caputo, D; de Cesare, G; Tucci, M
      Characterisation and modelling of a two terminal visible/infrared photodetector based on amorphous/crystalline silicon heterostructure

      SENSORS AND ACTUATORS A-PHYSICAL
    24. Martinez-Criado, G; Cros, A; Cantarero, A; Miskys, CR; Ambacher, O; Dimitrov, R; Stutzmann, M
      Photoluminescence of Ga-face AlGaN/GaN single heterostructures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    25. Breitschadel, O; Kley, L; Grabeldinger, H; Hsieh, JT; Kuhn, B; Scholz, F; Schweizer, H
      Short-channel effects in AlGAN/GaN HEMTs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    26. Callen, O; Mosser, V
      Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface GaAs based heterostructures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    27. Melkadze, R; Khuchua, N; Tchakhnakia, Z; Makalatia, T; Didebashvili, GD; Peradze, G; Khelashvili, T; Ksaverieva, M
      Investigation of MBE grows GaAs/AlGaAs/InGaAs heterostructures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    28. Liu, JZ; Nojima, T; Nishizaki, T; Kobayashi, N
      Spin injection in perovskite YBa2Cu3O7/La0.7Ca0.3MnO3 double layers and YBa2Cu3O7/SrTiO3/La0.7Ca0.3MnO3 trilayers in magnetic fields

      PHYSICA C
    29. Nitta, J; Hu, CM; Jensen, A; Hansen, JB; Takayanagi, H
      Spin injection experiment with multiple NiFe/ZnAs-2DEG/NiFe junctions

      PHYSICA C
    30. Brandi, HS; Latge, A; Oliveira, LE
      Laser effects in semiconductor heterostructures within an extended dressed-atom approach

      PHYSICA B
    31. Hashimoto, K; Muraki, K; Saku, T; Hirayama, Y
      Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure

      PHYSICA B
    32. Uchida, K; Miura, N; Issiki, F; Shiraki, Y
      Carrier localization in GaP/AlP type-II heterostructures in high magnetic fields

      PHYSICA B
    33. Zeitler, U; Schumacher, HW; Haug, RJ; Jansen, AGM
      Transport anisotropies in a Si/SiGe heterostructure induced by an in-planemagnetic field

      PHYSICA B
    34. Fujihara, S; Miyake, S; Kimura, T; Inaba, K
      Structural analysis of sol-gel-derived LaNiO3(100)/CeO2(100)/Si(100) heterostructures

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    35. Li, GH; Zhou, SP; Xu, DM
      Research on dynamics in modulation-doped GaAs/AlxGa1-xAs heterostructures

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    36. Cheng, SY
      Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike

      SUPERLATTICES AND MICROSTRUCTURES
    37. Kim, G; Koh, KM; Kim, CH
      Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure

      SUPERLATTICES AND MICROSTRUCTURES
    38. Yang, SC; Chiu, HC; Chien, FT; Chan, YJ; Kuo, JM
      RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETsusing CHF3+BCl3 mixing plasma

      IEEE ELECTRON DEVICE LETTERS
    39. Daumiller, I; Theron, D; Gaquiere, C; Vescan, A; Dietrich, R; Wieszt, A; Leier, H; Vetury, R; Mishra, UK; Smorchkova, IP; Keller, S; Nguyen, NX; Nguyen, C; Kohn, E
      Current instabilities in GaN-based devices

      IEEE ELECTRON DEVICE LETTERS
    40. Fujisawa, T; Sonoda, T; Ootake, R; Fujii, A; Yoshino, K
      Microring light-emitting devices with self-assembled multilayer structuresbased on poly(p-phenylene vinylene)s

      SYNTHETIC METALS
    41. Fujii, A; Sonoda, T; Fujisawa, T; Ootake, R; Yoshino, K
      Synthesis and luminescent properties of water-soluble poly(p-phenylene vinylene)

      SYNTHETIC METALS
    42. Guo, Y; Lu, JQ; Zeng, Z; Wang, Q; Gu, BL; Kawazoe, Y
      Quantum size effect and temperature effect on spin-polarized transport in ZnSe/Zn1-xMnxSe multilayers

      PHYSICS LETTERS A
    43. Kim, HS; Choi, IH; Oh, DK; Park, MH; Hwang, N; Lee, HT
      1.55 mu m spot-size converter integrated laser diode with a vertically tapered thickness waveguide using selective area metalorganic vapor phase epitaxy

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    44. Barrios, CA; Messmer, ER; Holmgren, M; Risberg, A; Halonen, J; Lourdudoss, S
      Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe

      JOURNAL OF ELECTRONIC MATERIALS
    45. Friedland, KJ; Riedel, A; Kostial, H; Horicke, M; Hey, R; Ploog, KH
      High mobility electron heterostructure wafer fused onto LiNbO3

      JOURNAL OF ELECTRONIC MATERIALS
    46. Hong, SK; Chen, Y; Ko, HJ; Wenisch, H; Hanada, T; Yao, T
      ZnO and related materials: Plasma-assisted molecular beam epitaxial growth, characterization, and application

      JOURNAL OF ELECTRONIC MATERIALS
    47. Bahir, G; Garber, V; Dust, A
      Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    48. Pitts, OJ; Watkins, SP; Wang, CX; Stotz, JAH; Thewalt, MLW
      In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE

      JOURNAL OF ELECTRONIC MATERIALS
    49. Brito, FG; Estanislau, JF; Egues, JC
      Shot noise in spin-polarized currents

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    50. Bazhenov, NL; Zegrya, GG; Mikhailova, MP; Mynbaev, KD; Smirnov, VA; Yakovlev, YP
      Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAsheterojunction and size-quantization levels at the interface

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    51. Djurisic, AB; Bundaleski, NK; Li, EH
      The design of reflective filters based on AlxGa1-xN multilayers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    52. Hanfoug, R; Salesse, A; Yarekha, DA; Baranov, AN; Alibert, C
      Use of AlOx in cladding layers of an antimonide laser structure emitting at 2.3 mu m

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    53. Jiang, XM; Jia, QJ; Hu, TD; Huang, YY; Zheng, WL; He, W; Xian, DC; Shi, B; Jiang, ZM; Wang, X
      Study of semiconductor super thin heterostructures with synchrotron radiation X-ray standing wave technique

      HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
    54. Khlyap, G; Sydorchuk, P
      Growth and electrical properties of new semiconductor compound ZnCdHgTe

      CRYSTAL RESEARCH AND TECHNOLOGY
    55. Martin, F; Oriols, X
      Effects of line parameters on soliton-like propagation in nonlinear transmission lines: Application to the optimization of frequency triplers

      INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
    56. Ray, SK; Kar, GS; Banerjee, SK
      Characteristics of UHVCVD grown Si/Si1-x-yGexCy/Si quantum well heterostructure

      APPLIED SURFACE SCIENCE
    57. Roe, KJ; Kolodzey, J; Swann, CP; Tsao, MW; Rabolt, JF; Chen, J; Brandes, GR
      The electrical and optical properties of thin film diamond implanted with silicon

      APPLIED SURFACE SCIENCE
    58. Rabah, H; Alain, S; Claude, A
      Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching

      APPLIED SURFACE SCIENCE
    59. Wang, XQ; Li, LS; Van der Meer, BW; Jin, J; Tang, DX; Hui, Z; Li, YZ; Li, TJ
      Comparison of photovoltaic behaviors for horseradish peroxidase and its mimicry by surface photovoltage spectroscopy

      BIOCHIMICA ET BIOPHYSICA ACTA-PROTEIN STRUCTURE AND MOLECULAR ENZYMOLOGY
    60. Peressi, M; Colombo, L; de Gironcoli, S
      Role of defects in the electronic properties of amorphous/crystalline Si interface - art. no. 193303

      PHYSICAL REVIEW B
    61. Egues, JC; Gould, C; Richter, G; Molenkamp, LW
      Spin filtering and magnetoresistance in ballistic tunnel junctions - art. no. 195319

      PHYSICAL REVIEW B
    62. Heersche, HB; Schapers, T; Nitta, J; Takayanagi, H
      Enhancement of spin injection from ferromagnetic metal into a two-dimensional electron gas using a tunnel barrier - art. no. 161307

      PHYSICAL REVIEW B
    63. Guo, Y; Lu, JQ; Gu, BL; Kawazoe, Y
      Spin-resonant splitting in magnetically modulated semimagnetic semiconductor superlattices - art. no. 155312

      PHYSICAL REVIEW B
    64. Zutic, I; Fabian, J; Das Sarma, S
      Spin injection through the depletion layer: A theory of spin-polarized p-njunctions and solar cells - art. no. 121201

      PHYSICAL REVIEW B
    65. Molenkamp, LW; Schmidt, G; Bauer, GEW
      Rashba Hamiltonian and electron transport - art. no. 121202

      PHYSICAL REVIEW B
    66. Schapers, T; Nitta, J; Heersche, HB; Takayanagi, H
      Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor - art. no. 125314

      PHYSICAL REVIEW B
    67. Kim, KY; Lee, B
      Wigner-function formulation in anisotropic semiconductor quantum wells - art. no. 115304

      PHYSICAL REVIEW B
    68. Smith, DL; Silver, RN
      Electrical spin injection into semiconductors - art. no. 045323

      PHYSICAL REVIEW B
    69. Aigle, M; Pascher, H; Kim, H; Tarhan, E; Mayur, AJ; Sciacca, MD; Ramdas, AK; Springholz, G; Bauer, G
      Optical phonons in Pb1-xEuxTe epilayers and PbTe/EuTe superlattices: Berreman effect - art. no. 035316

      PHYSICAL REVIEW B
    70. Mireles, F; Kirczenow, G
      Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires - art. no. 024426

      PHYSICAL REVIEW B
    71. Kawaharazuka, A; Saku, T; Kikuchi, CA; Horikoshi, Y; Hirayama, Y
      Free GaAs surfaces studied using a back-gated undoped GaAs/AlxGa1-xAs heterostructure - art. no. 245309

      PHYSICAL REVIEW B
    72. Grundler, D
      Ballistic spin-filter transistor - art. no. 161307

      PHYSICAL REVIEW B
    73. Ghazali, A; Lima, ICD; Boselli, MA
      Hole spin polarization in Ga1-xAlxAs : Mn structures - art. no. 153305

      PHYSICAL REVIEW B
    74. Hausler, W
      Rashba precession in quantum wires with interaction - art. no. 121310

      PHYSICAL REVIEW B
    75. Hu, CM; Nitta, J; Jensen, A; Hansen, JB; Takayanagi, H
      Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts - art. no. 125333

      PHYSICAL REVIEW B
    76. Kuhn, DD; Chtchelkatchev, NM; Lesovik, GB; Blatter, G
      Supercurrents through gated superconductor-normal-metal-superconductor contacts: The Josephson transistor - art. no. 054520

      PHYSICAL REVIEW B
    77. Gotra, Z; Stakhira, P; Tokarev, I; Proszak, W
      Formation of heterostructure of A(3) B-6 semiconductor compounds by surface laser modification

      OPTICS AND LASERS IN ENGINEERING
    78. Ohmori, Y; Tsukagawa, T; Kajii, H
      Enhanced blue light electroluminescence utilizing heterostructure of p-sexiphenyl and TPD

      DISPLAYS
    79. Lalinsky, T; Skriniarova, J; Kuzmik, J; Hasenohrl, S; Fox, A; Tomaska, M; Mozolova, Z; Kovacik, T; Krajcer, A; Kordos, P
      Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs

      VACUUM
    80. Lalinsky, T; Skriniarova, J; Kostic, I; van der Hart, A; Hrkut, P; Hascik, S; Matay, L; Mozolova, Z; Kordos, P
      T-shaped gates for heterostructure field effect transistors

      VACUUM
    81. Wang, YQ; Wang, ZL; Brown, T; Brown, A; May, G
      Interfacial roughening in lattice-matched GaInP/GaAs heterostructures

      THIN SOLID FILMS
    82. Ito, T; Okayama, Y; Shiratori, S
      The fabrication of organic/inorganic multilayer by wet process and sequential adsorption method

      THIN SOLID FILMS
    83. Onoda, M; Tada, K
      Photovoltaic effects of MDOPPV/PPy layer

      THIN SOLID FILMS
    84. Katsumata, H; Makita, Y; Takada, T; Tanoue, H; Kobayashi, N; Hasegawa, M; Kakemoto, H; Tsukamoto, T; Uekusa, S
      Fabrication of heterostructure p-beta-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

      THIN SOLID FILMS
    85. Liu, ZX; Watanabe, M; Hanabusa, M
      Electrical and photovoltaic properties of iron-silicide/silicon heterostructures formed by pulsed laser deposition

      THIN SOLID FILMS
    86. Tan, CS; Choi, WK; Bera, LK; Pey, KL; Antoniadis, DA; Fitzgerald, EA; Currie, MT; Maiti, CK
      N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

      SOLID-STATE ELECTRONICS
    87. Aouas, MR; Sekkal, W; Zaoui, A
      Pressure effect on phonon modes in gallium nitride: a molecular dynamics study

      SOLID STATE COMMUNICATIONS
    88. Chang, K; Peeters, FM
      Spin polarized tunneling through diluted magnetic semiconductor barriers

      SOLID STATE COMMUNICATIONS
    89. Sakai, JWL; Morais, PC
      Photocarrier transport and recombination in an asymmetric quantum well subjected to a focused excitation

      SOLID STATE COMMUNICATIONS
    90. Kudelski, A; Fronc, K; Wrobel, J; Mackowski, S; Cywinski, G; Aleszkiewicz, M; Kyrychenko, F; Wojtowicz, T; Kossut, J; Gaj, J
      Microluminescence from a diluted magnetic semiconductor quantum well in a proximity of an iron micromagnet

      SOLID STATE COMMUNICATIONS
    91. Ghali, M; Kossut, J; Janik, E; Reginski, K; Klopotowski, L
      Optical injection of spin-polarized carriers across a strongly mismatched heterostructure

      SOLID STATE COMMUNICATIONS
    92. Kawakami, RK; Kato, Y; Hanson, M; Malajovich, I; Stephens, JM; Johnston-Halperin, E; Salis, G; Gossard, AC; Awschalom, DD
      Ferromagnetic imprinting of nuclear spins in semiconductors

      SCIENCE
    93. LaBella, VP; Bullock, DW; Ding, Z; Emery, C; Venkatesan, A; Oliver, WF; Salamo, GJ; Thibado, PM; Mortazavi, M
      Spatially resolved spin-injection probability for gallium arsenide

      SCIENCE
    94. Kroemer, H
      Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks

      REVIEWS OF MODERN PHYSICS
    95. Imenkov, AN; Kolchanova, NM; Yakovlev, YP; Kubat, P; Civis, S
      The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 mu m (2800-3100 cm(-1))

      REVIEW OF SCIENTIFIC INSTRUMENTS
    96. Efros, AL; Rashba, EI; Rosen, M
      Paramagnetic ion-doped nanocrystal as a voltage-controlled spin filter - art.no. 206601

      PHYSICAL REVIEW LETTERS
    97. Karakut, I; Goldman, VJ; Liu, J; Zaslavsky, A
      Absence of compressible edge channel rings in quantum antidots - art. no. 146801

      PHYSICAL REVIEW LETTERS
    98. Hu, CM; Matsuyama, T
      Spin injection across a heterojunction: A ballistic picture - art. no. 066803

      PHYSICAL REVIEW LETTERS
    99. Zhu, HJ; Ramsteiner, M; Kostial, H; Wassermeier, M; Schonherr, HP; Ploog, KH
      Room-temperature spin injection from Fe into GaAs - art. no. 016601

      PHYSICAL REVIEW LETTERS
    100. Djurisic, AB; Li, EH
      Modeling the optical constants of ternary alloys using modified oscillatormodel: Application to AlxGa1-xN

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/06/20 alle ore 07:56:26