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La ricerca find articoli where soggetti phrase all words 'HETEROEPITAXIAL GROWTH' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 200 riferimenti
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    1. Dolgaev, SI; Karasev, ME; Kulevskii, LA; Simakin, AV; Shafeev, GA
      Dissolution in a supercritical liquid as a mechanism of laser ablation of sapphire

      QUANTUM ELECTRONICS
    2. Uchiyama, T; Wang, Z
      Preparation of superconductive Y-Ba-Cu-O/Bi-Sr-Ca-Cu-O heteroepitaxial bilayer films by Nd : YAG laser ablation

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    3. Koster, G; Verbist, K; Rijnders, G; Rogalla, H; van Tendeloo, G; Blank, DHA
      Structure and properties of (Sr,Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition

      PHYSICA C
    4. Yanase, N; Abe, K; Fukushima, N; Kawakubo, T
      Improvement of ferroelectric hysteresis curves in epitaxial BaTiO3 film capacitors by 2-step deposition

      IEICE TRANSACTIONS ON ELECTRONICS
    5. Ishigaki, H; Yamada, T; Wakiya, N; Shinozaki, K; Mizutani, N
      Effect of the thickness of SiO2 under layer on the initial stage of epitaxial growth process of yttria-stabilized zirconia (YSZ) thin film deposited on Si(001) substrate

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    6. Abe, K
      Epitaxial growth of (Ba, Sr)TiO3 thin films and their ferroelectric properties

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    7. Ledentsov, NN; Shchukin, VA; Bimberg, D; Ustinov, VM; Cherkashin, NA; Musikhin, YG; Volovik, BV; Cirlin, GE; Alferov, ZI
      Reversibility of the island shape, volume and density in Stranski-Krastanow growth

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    8. Meunier, I; Tetot, R; Treglia, G; Legrand, B
      Thermal dependence of surface polymorphism: the Ag/Cu (111) case

      APPLIED SURFACE SCIENCE
    9. Kaganer, VM; Ploog, KH
      Energies of strained vicinal surfaces and strained islands - art. no. 205301

      PHYSICAL REVIEW B
    10. Spencer, BJ; Tersoff, J
      Stresses and first-order dislocation energetics in equilibrium Stranski-Krastanow islands - art. no. 205424

      PHYSICAL REVIEW B
    11. Liu, F; Li, AH; Lagally, MG
      Self-assembly of two-dimensional islands via strain-mediated coarsening - art. no. 126103

      PHYSICAL REVIEW LETTERS
    12. Jinschek, J; Kaiser, U; Richter, W
      Different void shapes in Si at the SiC thin film/Si(111) substrate interface

      JOURNAL OF ELECTRON MICROSCOPY
    13. Zhang, BP; Manh, DD; Wakatsuki, K; Segawa, Y
      Nanostructures formed on CdSe/ZnSe surfaces

      JOURNAL OF CRYSTAL GROWTH
    14. Rao, BV; Gruznev, D; Tambo, T; Tatsuyama, C
      Growth of high-quality InSb films on Si(111) substrates without buffer layers

      JOURNAL OF CRYSTAL GROWTH
    15. Nahm, KS; Kim, KC; Park, CI; Lim, KY; Yang, YS; Seo, YH
      Growth chemistry and interface characterization of single crystal SiC on modified Si surface

      JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
    16. Voronin, GA; Pantea, C; Zerda, TW; Ejsmont, K
      Oriented growth of beta-SiC on diamond crystals at high pressure

      JOURNAL OF APPLIED PHYSICS
    17. Kim, KC; Park, CI; Roh, JI; Nahm, KS; Hahn, YB; Lee, YS; Lim, KY
      Mechanistic study and characterization of 3C-SiC(100) grown on Si(100)

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    18. Moller, H; Krotz, G; Eickhoff, M; Nielsen, A; Papaioannou, V; Stoemenos, J
      Suppression of Si cavities at the SiC/Si interface during epitaxial growthof 3C-SiC on silicon-on-insulator

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    19. Gutierrez, HR; Cotta, MA; de Carvalho, MMG
      Faceting evolution during self-assembling of InAs/InP quantum wires

      APPLIED PHYSICS LETTERS
    20. Wan, J; Venugopal, R; Melloch, MR; Liaw, HM; Rummel, WJ
      Growth of crack-free hexagonal GaN films on Si(100)

      APPLIED PHYSICS LETTERS
    21. Patella, F; Fanfoni, M; Arciprete, F; Nufris, S; Placidi, E; Balzarotti, A
      Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001)

      APPLIED PHYSICS LETTERS
    22. Pasquariello, D; Camacho, M; Ericsson, F; Hjort, K
      Crystalline defects in InP-to-silicon direct wafer bonding

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. Abe, K; Yanase, N; Kawakubo, T
      Bistable states of ferroelectric hysteresis loops in a heteroepitaxial BaTiO3 thin film capacitor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. Horita, S; Kuniya, T
      Increase of dielectric constant of an epitaxial (100) yttria-stabilized zirconia film on (100) Si substrate deposited by reactive sputtering in the metallic mode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    25. Sun, Y; Enokida, T; Hagino, H; Miyasato, T
      Influence of oxygen on formation of hollow voids at SiC/Si interface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    26. Yamashiki, T; Tsuda, K
      Stress measurements of polished surface of 4 '-nitrobenzylidene-3-ethylcarbonylamino-4-methoxyaniline single crystal by laser Raman spectroscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    27. Narayanan, V; Mahajan, S; Sukidi, N; Bachmann, KJ; Woods, V; Dietz, N
      Orientation mediated self-assembled gallium phosphide islands grown on silicon

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    28. Ota, M; Tsubota, T; Kusakabe, K; Morooka, S
      Synthesis of diamond thin films on iridium substrates by MPCVD with bias-enhanced nucleation

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    29. Faurie, JP; Tournie, E
      ZnSe-based heterostructures for blue-green lasers

      COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
    30. Mehregany, M; Zorman, CA; Roy, S; Fleischman, AJ; Wu, CH; Rajan, N
      Silicon carbide for microelectromechanical systems

      INTERNATIONAL MATERIALS REVIEWS
    31. Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH
      Characteristics of GaN films grown on the stress-imposed Si(111)

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    32. Kim, KC; Nahm, KS; Hahn, YB; Lee, YS; Byun, HS
      Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in lowpressure radio frequency-induction heated chemical vapor deposition reactor

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    33. Wake, T; Saiki, K; Koma, A
      Epitaxial growth and surface structure of cuprous halide thin films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    34. Vanhollebeke, K; Moerman, I; Van Daele, P; Demeester, P
      Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates

      JOURNAL OF ELECTRONIC MATERIALS
    35. Bell, KA; Ebert, M; Yoo, SD; Flock, K; Aspnes, DE
      Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

      JOURNAL OF ELECTRONIC MATERIALS
    36. Bittencourt, C
      Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    37. Meunier, I; Treglia, G; Legrand, B; Tetot, R; Aufray, B; Gay, JM
      Molecular dynamics simulations for the Ag/Cu (111) system: from segregatedto constitutive interfacial vacancies

      APPLIED SURFACE SCIENCE
    38. Reinke, P; Rudmann, D; Oelhafen, P
      Temperature dependence of silicon carbide interface formation: A photoelectron spectroscopy study

      PHYSICAL REVIEW B
    39. Williams, RS; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA
      Thermodynamics of the size and shape of nanocrystals: Epitaxial Ge on Si(001)

      ANNUAL REVIEW OF PHYSICAL CHEMISTRY
    40. Hata, T; Sasaki, K; Ichikawa, Y; Sasaki, K
      Yttria-stabilized zirconia (YSZ) heteroepitaxially grown on Si substrates by reactive sputtering

      VACUUM
    41. Kitabatake, M
      SiC/Si heteroepitaxial growth

      THIN SOLID FILMS
    42. Derbali, MB; Meddeb, J; Abraham, P
      Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates

      THIN SOLID FILMS
    43. Muller, P; Kern, R
      Equilibrium nano-shape changes induced by epitaxial stress (generalised Wulf-Kaishew theorem)

      SURFACE SCIENCE
    44. Kuo, JS; Rogers, JW
      Reaction of dimethylethylamine alane and ammonia on Si(100) during the atomic layer growth of AlN: static SIMS, TPSIMS, and TPD

      SURFACE SCIENCE
    45. Jesson, DE; Kastner, M; Voigtlander, B
      Direct observation of subcritical fluctuations during the formation of strained semiconductor islands

      PHYSICAL REVIEW LETTERS
    46. Amimer, K; Eddrief, M; Sebenne, CA
      Stress relaxation at forming GaSe-Si(111) interfaces

      JOURNAL OF CRYSTAL GROWTH
    47. Bhuiyan, AG; Hashimoto, A; Yamamoto, A; Ishigami, R
      Nitridation effects of GaP(111)B substrate on MOCVD growth of InN

      JOURNAL OF CRYSTAL GROWTH
    48. Weng, X; Goldman, RS; Partin, DL; Heremans, JP
      Evolution of structural and electronic properties of highly mismatched InSb films

      JOURNAL OF APPLIED PHYSICS
    49. Ross, FM
      Growth processes and phase transformations studied by in situ transmissionelectron microscopy

      IBM JOURNAL OF RESEARCH AND DEVELOPMENT
    50. Zhang, BP; Manh, DD; Wakatsuki, K; Segawa, Y
      Features of nanometer scale islands on CdSe/ZnSe surfaces

      APPLIED PHYSICS LETTERS
    51. Boscherini, F; Capellini, G; Di Gaspare, L; Rosei, F; Motta, N; Mobilio, S
      Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111)

      APPLIED PHYSICS LETTERS
    52. Kanisawa, K; Yamaguchi, H; Hirayama, Y
      Two-dimensional growth of InSb thin films on GaAs(111)A substrates

      APPLIED PHYSICS LETTERS
    53. Yasumoto, T; Yanase, N; Abe, K; Kawakubo, T
      Epitaxial growth of BaTiO3 thin films by high gas pressure sputtering

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. Onozu, T; Miura, R; Takami, S; Kubo, M; Miyamoto, A; Iyechika, Y; Maeda, T
      Investigation of thermal annealing process of GaN layer on sapphire by molecular dynamics

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    55. Yamamoto, T; Ikeda, M; Ezoe, K; Ishii, K; Matsumoto, S
      Effect of boron on solid phase epitaxy of Ge on Si(111) surface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    56. Rao, BV; Gruznev, D; Tambo, T; Tatsuyama, C
      Effect of In(4 x 1) reconstruction induced interface modification on the growth behavior of InSb on Si(111) substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    57. Abe, K; Yanase, N; Kawakubo, T
      Asymmetric switching of ferroelectric polarization in a heteroepitaxial BaTiO3 thin film capacitor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    58. Ishida, M; Hori, H; Kondo, F; Akai, D; Sawada, K
      Fabrication of the Si/Al2O3/SiO2/Si structure using O-2 annealed Al2O3/Si structure

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    59. Yamashiki, T; Tsuda, K
      Heteroepitaxial growth of 4 '-nitorobenzylidene-3-acetamino-4-methoxyaniline on the single crystal of 4 '-nitrobenzyliden-3-ethycarbonylamino-4-methoxyaniline

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    60. Batinica, GJ; Crowell, JE
      Photoinduced reaction of digermane with Si(111)

      JOURNAL OF PHYSICAL CHEMISTRY A
    61. Lyalin, AA; Simakin, AV; Bobyrev, VA; Lubnin, EN; Shafeev, GA
      Laser deposition of amorphous diamond-like films from liquid aromatic hydrocarbons

      QUANTUM ELECTRONICS
    62. Jia, QX; Kwon, C; Lu, P
      Structural properties of Ba0.6Sr0.4TiO3 thin films on epitaxial RuO2 electrodes

      INTEGRATED FERROELECTRICS
    63. Bittencourt, C
      Low-energy yield spectroscopy measurements applied to determine valence band line-up at interfaces with non-homogeneous overlayers

      JOURNAL OF PHYSICS-CONDENSED MATTER
    64. Barabasi, AL
      Thermodynamic and kinetic mechanisms in self-assembled quantum dot formation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    65. Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA; Williams, RS
      Equilibrium size distributions of clusters during strained epitaxial growth

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    66. Taylor, C; Eshun, E; Spencer, MG; Hobart, KD; Kub, FJ
      Growth of beta SiC on a ceramic SiC substrate using a thin silicon intermediate layer

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    67. Sahlaoui, M; Rouhani, MD; Esteve, D; Ayadi, A
      Strained semiconductors structures: simulation of the thin films heteroepitaxial growth

      APPLIED SURFACE SCIENCE
    68. Wang, YS; Li, JM; Lin, LY; Zhang, FF
      The growth of SiC on Si substrates with C2H4 and Si2H6

      APPLIED SURFACE SCIENCE
    69. Liao, XZ; Zou, J; Cockayne, DJH; Qin, J; Jiang, ZM; Wang, X; Leon, R
      Strain relaxation by alloying effects in Ge islands grown on Si(001)

      PHYSICAL REVIEW B-CONDENSED MATTER
    70. Spencer, BJ
      Asymptotic derivation of the glued-wetting-layer model and contact-angle condition for Stranski-Krastanow islands

      PHYSICAL REVIEW B-CONDENSED MATTER
    71. Omi, H; Ogino, T
      Self-organization of Ge islands on high-index Si substrates

      PHYSICAL REVIEW B-CONDENSED MATTER
    72. Alessi, MG; Capizzi, M; Bhatti, AS; Frova, A; Martelli, F; Frigeri, P; Bosacchi, A; Franchi, S
      Optical properties of InAs quantum dots: Common trends

      PHYSICAL REVIEW B-CONDENSED MATTER
    73. Savage, DE; Liu, F; Zielasek, V; Lagally, MG
      Fundamental mechanisms of film growth

      GERMANIUM SILICON: PHYSICS AND MATERIALS
    74. Yokota, K; Tamura, S
      Heteroepitaxial growth of GaAs films on Si substrates using ion beams, neutral molecular beams, and their mixtures

      THIN SOLID FILMS
    75. Horn-von Hoegen, M; Heringdorf, FJMZ; Kammler, M; Schaeffer, C; Reinking, D; Hofmann, KR
      Bi surfactant mediated epitaxy of Ge on Si(111)

      THIN SOLID FILMS
    76. Kawamura, T; Natori, T
      Extended solid-on-solid model for heteroepitaxial growth

      SURFACE SCIENCE
    77. Capellini, G; Motta, N; Sgarlata, A; Calarco, R
      Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study

      SOLID STATE COMMUNICATIONS
    78. Borgi, K; Hassen, F; Maaref, H; Dazord, J; Monteil, Y; Davenas, J
      Initial stages of InP/GaP (100) and (111)(A,B) grown by metal organic chemical vapor deposition

      MICROELECTRONICS JOURNAL
    79. Bittencourt, C
      Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    80. Ross, FM; Tersoff, J; Tromp, RM; Reuter, MC; Bennett, PA
      Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy

      JOURNAL OF ELECTRON MICROSCOPY
    81. Koma, A
      Van der Waals epitaxy for highly lattice-mismatched systems

      JOURNAL OF CRYSTAL GROWTH
    82. Wang, YS; Li, JM; Zhang, FF; Lin, LY
      The effects of carbonized buffer layer on the growth of SiC on Si

      JOURNAL OF CRYSTAL GROWTH
    83. Jung, YC; Miura, H; Ishida, M
      Improvement of the surface morphology of the epitaxial gamma-Al2O3 films on Si(111) grown using template growth with different temperatures by Al solid and N2O gas source molecular beam epitaxy (MBE)

      JOURNAL OF CRYSTAL GROWTH
    84. Liu, JP; Gong, Q; Huang, DD; Li, JP; Sun, DZ; Kong, MY
      Evolution of height distribution of Ge islands on Si(1 0 0)

      JOURNAL OF CRYSTAL GROWTH
    85. Belenchuk, A; Shapoval, O; Kantser, V; Fedorov, A; Schunk, P; Schimmel, T; Dashevsky, Z
      Growth of (1 1 1)-oriented PbTe thin films on vicinal Si(1 1 1) and on Si(1 0 0) using fluoride buffers

      JOURNAL OF CRYSTAL GROWTH
    86. Jung, YC; Miura, H; Ohtani, K; Ishida, M
      High-quality silicon/insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and Si

      JOURNAL OF CRYSTAL GROWTH
    87. Rudin, CD; Spencer, BJ
      Equilibrium island ridge arrays in strained solid films

      JOURNAL OF APPLIED PHYSICS
    88. Cho, MH; Ko, DH; Jeong, K; Whangbo, SW; Whang, CN; Choi, SC; Cho, SJ
      Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam deposition

      JOURNAL OF APPLIED PHYSICS
    89. Kienzle, O; Ernst, F; Ruhle, M; Schmidt, OG; Eberl, K
      Germanium "quantum dots" embedded in silicon: Quantitative study of self-alignment and coarsening

      APPLIED PHYSICS LETTERS
    90. Yanase, N; Abe, K; Fukushima, N; Kawakubo, T
      Thickness dependence of ferroelectricity in heteroepitaxial BaTiO3 thin film capacitors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    91. Ishida, Y; Takahashi, T; Okumura, H; Sekigawa, T; Yoshida, S
      Elongated shaped Si island formation on 3C-SiC by chemical vapor deposition and its application to antiphase domain observation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. Jung, YC; Miura, H; Ishida, M
      Formation of very thin epitaxial Al2O3 pre-layer with very smooth surface on Si (111) using a protective oxide layer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    93. Kimura, T; Ishida, M
      Development of surface morphology of epitaxial Al2O3 on silicon by controlling reaction between oxygen and silicon surface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. Ikoma, Y; Endo, T; Watanabe, F; Motooka, T
      Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonicfree jets of CH3SiH3

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    95. SAWABE A; FUKUDA H
      HETEROEPITAXIAL GROWTH OF DIAMOND

      Electronics & communications in Japan. Part 2, Electronics
    96. Williams, RS; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA
      Equilibrium shape diagram for strained Ge nanocrystals on Si(001)

      JOURNAL OF PHYSICAL CHEMISTRY B
    97. RUMANER LE; OLMSTEAD MA; OHUCHI FS
      INTERACTION OF GASE WITH GAAS(111) - FORMATION OF HETEROSTRUCTURES WITH LARGE LATTICE MISMATCH

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    98. CHEN J; STECKL AJ; LOBODA MJ
      MOLECULAR-BEAM EPITAXY GROWTH OF SIC ON SI(111) FROM SILACYCLOBUTANE

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    99. ABE K; YANASE N; SANO K; IZUHA M; FUKUSHIMA N; KAWAKUBO T
      MODIFICATION OF FERROELECTRICITY IN HETEROEPITAXIAL (BA,SR)TIO3 FILMSFOR NONVOLATILE MEMORY APPLICATIONS

      Integrated ferroelectrics (Print)
    100. JIA QX; FINDIKOGLU AT; ZHOU R; FOLTYN SR; WU XD; SMITH JL; WANG Q; EVANS DF; GLADFELTER WL
      STRUCTURAL AND DIELECTRIC-PROPERTIES OF BA0.5SR0.5TIO3 THIN-FILMS WITH AN EPI-RUO2 BOTTOM ELECTRODE

      Integrated ferroelectrics


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Documento generato il 24/10/20 alle ore 21:11:50