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La ricerca find articoli where soggetti phrase all words 'GaAs' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 17586 riferimenti
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    1. da Silva, LR; Vallejos, RO; Mendes, RS
      Specific heat oscillations in quasi-periodic structures

      CHAOS SOLITONS & FRACTALS
    2. Gao, YZ; Kan, H; Gao, FS; Gong, XY; Yamaguchi, T
      Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

      JOURNAL OF CRYSTAL GROWTH
    3. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part I - Island density

      JOURNAL OF CRYSTAL GROWTH
    4. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part II - Island size

      JOURNAL OF CRYSTAL GROWTH
    5. Ohshika, K; Kuroda, J; Yanazawa, H
      The effect of surface oxidation status on 0.35-mu m HIGFET characteristics

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    6. Matsushita, K; Monbara, T; Nakayama, K; Naganuma, H; Okuyama, S; Okuyama, K
      In-situ observation of GaAs surface in high vacuum by contact angle measurement

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    7. Innocenti, M; Forni, F; Pezzatini, G; Raiteri, R; Loglio, F; Foresti, ML
      Electrochemical behavior of As on silver single crystals and experimental conditions for InAs growth by ECALE

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    8. Liu, Y; Xiao, XR; Zeng, YP
      Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    9. Wade, TL; Vaidyanathan, R; Happek, U; Stickney, JL
      Electrochemical formation of a III-V compound semiconductor superlattice: InAs/InSb

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    10. Kwon, Y; Kim, HT; Park, JH; Kim, YK
      Low-loss micromachined inverted overlay CPW lines with wide impedance ranges and inherent airbridge connection capability

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    11. Lisak, D; Cassidy, DT; Moore, AH
      Bonding stress and reliability of high power GaAs-based lasers

      IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES
    12. Li, LS; Li, ADQ
      Probing surface electronic potentials and photovoltaic effects of self-assembled multilayers of metal phthalocyanine and oligomeric viologen on conductive substrates

      JOURNAL OF PHYSICAL CHEMISTRY B
    13. Lenzmann, F; Krueger, J; Burnside, S; Brooks, K; Gratzel, M; Gal, D; Ruhle, S; Cahen, D
      Surface photovoltage spectroscopy of dye-sensitized solar cells with TiO2,Nb2O5, and SrTiO3 nanocrystalline photoanodes: Indication for electron injection from higher excited dye states

      JOURNAL OF PHYSICAL CHEMISTRY B
    14. Kandalam, AK; Blanco, MA; Pandey, R
      Theoretical study of structural and vibrational properties of Al3N3, Ga3N3, and In3N3

      JOURNAL OF PHYSICAL CHEMISTRY B
    15. Lebedev, MV
      Sulfur adsorption at GaAs: Role of the adsorbate solvation and reactivity in modification of semiconductor surface electronic structure

      JOURNAL OF PHYSICAL CHEMISTRY B
    16. Sutter, EMM; Le Gall, M; Debiemme-Chouvy, C
      Behavior of p-type GaAs in an aerated boric acid solution at the open-circuit potential. Influence of the presence of Co(II) ions

      JOURNAL OF PHYSICAL CHEMISTRY B
    17. Hutchison, GR; Ratner, MA; Marks, TJ; Naaman, R
      Adsorption of polar molecules on a molecular surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    18. Jenichen, A; Engler, C
      Etching of GaAs(100) surfaces by halogen molecules: Density functional calculations on the different mechanisms

      JOURNAL OF PHYSICAL CHEMISTRY B
    19. Koch, SW; Kira, M; Meier, T
      Correlation effects in the excitonic optical properties of semiconductors

      JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS
    20. Koynov, K; Paraire, N; Bertrand, F; El Bermil, R; Dansas, P
      Design and investigation of semiconductor waveguide structures with grating couplers used as all-optical switches

      JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
    21. Xia, XH; Kelly, JJ
      Chemical etching and anodic oxidation of (100) silicon in alkaline solution: the role of applied potential

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    22. Kroemer, H
      Quasi-electric fields and band offsets: Teaching electrons new tricks (Nobel lecture)

      CHEMPHYSCHEM
    23. Said, M; Ben Zid, F; Bertoni, CM; Ossicini, S
      First-principles electronic structure of rare-earth arsenides

      EUROPEAN PHYSICAL JOURNAL B
    24. Lourenco, SA; Dias, IFL; Laureto, E; Duarte, JL; Filho, DOT; Meneses, EA; Leite, JR
      Influence of Al content on temperature dependence of excitonic transitionsin quantum wells

      EUROPEAN PHYSICAL JOURNAL B
    25. Ghosh, A
      Dynamical properties of three component Fibonacci quasicrystal

      EUROPEAN PHYSICAL JOURNAL B
    26. Bemporad, E; Carassiti, F; Kaciulis, S; Mattogno, G
      Verification of layered structures in Sno2/metal-based gas sensors by X-ray microanalysis: Comparison with X-ray photoelectron spectroscopy

      MICROSCOPY AND MICROANALYSIS
    27. Guillet, T; Voliotis, V; Grousson, R; Ferreira, R; Wang, XL; Ogura, M
      Exchange-induced splitting of radiative exciton levels in a single quantumwire

      PHYSICA E
    28. Qu, FY; Dantas, NO; Morais, PC
      Observation of the Fermi-edge singularity in n-doped single asymmetric quantum wells: the influence of residual acceptors

      PHYSICA E
    29. Narvaez, GA; Hawrylak, P; Brum, JA
      The role of finite hole mass in the negatively charged exciton in two dimensions

      PHYSICA E
    30. Liu, AM; Duan, CK
      Preparation and Raman scattering study of pore arrays on an InP(100) surface

      PHYSICA E
    31. Nogami, T; Takeda, T; Fujiwara, K
      Oscillator-strength modification of Stark ladder transitions due to resonance-induced wavefunction delocalization in a GaAs/AlAs superlattice under the electric field

      PHYSICA E
    32. Papadakis, SJ; De Poortere, EP; Shayegan, M; Winkler, R
      Spin-splitting in GaAs two-dimensional holes

      PHYSICA E
    33. Zrenner, A; Findeis, F; Beham, E; Markmann, M; Bohm, G; Abstreiter, G
      Optical and magneto-optical investigations on single-quantum dots

      PHYSICA E
    34. Warburton, RJ; Schaflein, C; Haft, D; Bickel, F; Lorke, A; Karrai, K; Garcia, JM; Schoenfeld, W; Petroff, PM
      Optical emission from single, charge-tunable quantum rings

      PHYSICA E
    35. Gerard, JM; Gayral, B
      InAs quantum dots: artificial atoms for solid-state cavity-quantum electrodynamics

      PHYSICA E
    36. Akahane, K; Xu, HZ; Okada, Y; Kawabe, M
      Formation of lateral-two-dimensional ordering in self-assembled InGaAs quantum dot on high index substrates

      PHYSICA E
    37. Citrin, DS
      Toward a semiconductor-based terahertz nonlinear medium

      PHYSICA E
    38. Tribuzy, CVB; Souza, PL; Landi, SM; Pires, MP; Butendeich, R; Bittencourt, AC; Marques, GE; Henriques, AB
      Delta-doping superlattices in multiple quantum wells

      PHYSICA E
    39. Vasanelli, A; De Giorgi, M; Ferreira, R; Cingolani, R; Bastard, G
      Energy levels and far-infrared absorption of multi-stacked dots

      PHYSICA E
    40. Akimov, IA; Sapega, VF; Mirlin, DN; Ustinov, VM
      Inelastic scattering of hot electrons in n-CaAs/AlAs types I and II multiple quantum wells doped with silicon

      PHYSICA E
    41. Zanelato, G; Pusep, YA; Galzerani, JC; Lubyshev, DI; Gonzalez-Borrero, PP
      Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

      PHYSICA E
    42. Canzler, TW; Holfeld, CP; Loser, F; Lyssenko, VG; Leo, K; Whittaker, DM; Kohler, K
      Fano resonances in semiconductor superlattices

      PHYSICA E
    43. Malinowski, A; Brand, MA; Harley, RT
      Nuclear effects in ultrafast quantum-well spin-dynamics

      PHYSICA E
    44. Takahashi, Y; Shizume, K; Masuhara, N
      Spin diffusion of a two-dimensional electron gas in the random phase approximation

      PHYSICA E
    45. Tackeuchi, A; Nakata, Y; Sasou, R; Mase, K; Kuroda, T; Yokoyama, N
      Observation of interdot tunneling process of spin-polarized electrons

      PHYSICA E
    46. Adachi, T; Ohno, Y; Matsukura, F; Ohno, H
      Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells

      PHYSICA E
    47. Zimmermann, R; Langbein, W; Runge, E; Hvam, JM
      Localized excitons in quantum wells show spin relaxation without coherenceloss

      PHYSICA E
    48. Meisels, R; Dybko, K; Ziouzia, F; Kuchar, F; Deutschmann, R; Abstreiter, G; Hein, G; Pierz, K
      Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

      PHYSICA E
    49. Winkler, R; Papadakis, SJ; De Poortere, EP; Shayegan, M
      Highly anisotropic Zeeman splitting of two-dimensional hole systems

      PHYSICA E
    50. Bournel, A; Delmouly, V; Dollfus, P; Tremblay, G; Hesto, P
      Theoretical and experimental considerations on the spin field effect transistor

      PHYSICA E
    51. Hayashi, T; Hashimoto, Y; Yoshida, S; Katsumoto, S; Iye, Y
      Control of material parameters and metal-insulator transition in (Ga,Mn)As

      PHYSICA E
    52. Heimbrodt, W; Hartmann, T; Klar, PJ; Lampalzer, M; Stolz, W; Volz, K; Schaper, A; Treutmann, W; von Nidda, HAK; Loidl, A; Ruf, T; Sapega, VF
      Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As

      PHYSICA E
    53. Sadowski, J; Mathieu, R; Svedlindh, P; Karlsteen, M; Kanski, J; Ilver, L; Asklund, H; Swiatek, K; Domagala, JZ; Bak-Misiuk, J; Maude, D
      Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures

      PHYSICA E
    54. Tazima, M; Yamamoto, K; Okazawa, D; Nagashima, A; Yoshino, J
      Effect of Mn on the low temperature growth of GaAs and GaMnAs

      PHYSICA E
    55. Okabayashi, J; Kimura, A; Rader, O; Mizokawa, T; Fujimori, A; Hayashi, T; Tanaka, M
      Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemissionspectroscopy

      PHYSICA E
    56. Ueda, S; Imada, S; Muro, T; Saitoh, Y; Suga, S; Matsukura, F; Ohno, H
      Magnetic circular dichroism in Mn 2p core absorption of Ga1-xMnxAs

      PHYSICA E
    57. Moriya, R; Katsumata, Y; Takatani, Y; Haneda, S; Kondo, T; Munekata, H
      Preparation and magneto-optical property of highly-resistive (Ga,Fe)As epilayers

      PHYSICA E
    58. Okazawa, D; Yamamoto, K; Nagashima, A; Yoshino, J
      MBE growth and properties of 3d transition metal-doped GaAs

      PHYSICA E
    59. Kuwabara, S; Ishii, K; Haneda, S; Kondo, T; Munekata, H
      Preparation of wurtzite GaN-based magnetic alloy semiconductors by molecular beam epitaxy

      PHYSICA E
    60. Chiba, D; Akiba, N; Matsukura, F; Ohno, Y; Ohno, H
      Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures

      PHYSICA E
    61. Morinaga, Y; Edahiro, T; Fujimura, N; Ito, T; Koide, T; Fujiwara, Y; Takeda, Y
      Magnetic properties of Er and Er, O-doped GaAs grown by organometallic vapor phase epitaxy

      PHYSICA E
    62. Yoshikawa, J; Urakawa, C; Ohta, H; Koide, T; Kawamoto, T; Fujiwara, Y; Takeda, Y
      ESR study of GaAs : Er codoped with oxygen grown by organometallic vapor phase epitaxy

      PHYSICA E
    63. Ohta, H; Urakawa, C; Nakashima, Y; Yoshikawa, J; Koide, T; Kawamoto, T; Fujiwara, Y; Takeda, Y
      Codoping effect of O-2 into Er-doped InP epitaxial layers grown by OMVPE

      PHYSICA E
    64. Koide, T; Isogai, Y; Fujiwara, Y; Takeda, Y
      OMVPE growth and properties of Dy-doped III-V semiconductors

      PHYSICA E
    65. Dong, JW; Lu, J; Xie, JQ; Chen, LC; James, RD; McKernan, S; Palmstrom, CJ
      MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs

      PHYSICA E
    66. Narita, K; Shirai, M
      Electronic and magnetoresistive properties of MnAs(0001)/GaAs(111) heterostructures

      PHYSICA E
    67. Haneda, S; Koshihara, S; Munekata, H
      Formation of FeAs and Fe crystallites in GaAs-Fe composite structures and their roles in light-enhanced magnetization

      PHYSICA E
    68. Akinaga, H; Mizuguchi, M; Manago, T; Sato, T; Kuramochi, H; Ono, K; Ofuchi, H; Oshima, M
      Magnetoresistive switch effect in MnSb granular films grown on sulfur-passivated GaAs: more-than 10 000% magnetoresistance effect at room-temperature

      PHYSICA E
    69. Sasakura, H; Muto, S; Ohshima, T
      Quantum gates using spin states of triple quantum dot

      PHYSICA E
    70. Ikari, T; Fukuyama, A; Akashi, Y
      Investigation of deep levels in semi-insulating GaAs by means of a thermally activated piezoelectric photoacoustic measurements

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    71. Fukuyama, A; Nagatomo, H; Akashi, Y; Ikari, T
      Piezoelectric photoacoustic spectra of Zn-doped InGaAlP light-emitting diodes

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    72. Kaminska, E; Piotrowska, A; Barcz, A; Reginski, K; Dluzewski, P; Kozlowski, M; Dynowska, E
      Study of Zn-related structural transformations at p-GaAs/Ni/Zn interfaces relative to the formation of an ohmic contact

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    73. Murdin, BN
      Key issues for mid-infrared emission

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    74. Shlimak, I; Pepper, M
      Two-dimensional variable-range hopping conductivity: influence of the electron-electron interaction

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    75. Siethoff, H; Brion, HG
      The deformation regimes of the yield point of silicon

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    76. Manimaran, M; Vaya, PR; Basu, S; Sato, T; Kanayama, T
      Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes

      SCRIPTA MATERIALIA
    77. Ebert, P
      Atomic structure of point defects in compound semiconductor surfaces

      CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
    78. Perera, AGU; Matsik, SG; Liu, HC; Gao, M; Buchanan, M; Schaff, WJ; Yeo, W
      35 mu m cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs

      INFRARED PHYSICS & TECHNOLOGY
    79. Ting, DZY; Bandara, SV; Gunapala, SD; Liu, JK; Rafol, SB; Mumolo, JM
      Wave function engineering for normal incidence intersubband infrared detection

      INFRARED PHYSICS & TECHNOLOGY
    80. Choi, KK; Kennerly, SW; Yao, J; Tsui, DC
      Characteristics of QWIPs at low background

      INFRARED PHYSICS & TECHNOLOGY
    81. Schneider, H; Koidl, P; Walther, M; Fleissner, J; Rehm, R; Diwo, E; Schwarz, K; Weimann, G
      Ten years of QWIP development at Fraunhofer IAF

      INFRARED PHYSICS & TECHNOLOGY
    82. Hirschauer, B; Alverbro, J; Andersson, J; Borglind, J; Bustamente, A; Fakoor-Biniaz, Z; Halldin, U; Helander, P; Lindberg-Eriksson, Y; Malm, H; Martijn, H; Nordahl, C; Oberg, O
      Development and production of QWIP focal plane arrays at ACREO

      INFRARED PHYSICS & TECHNOLOGY
    83. Kuo, DMT; Fang, AB; Chang, YC
      Theoretical modeling of dark current and photo-response for quantum well and quantum dot infrared detectors

      INFRARED PHYSICS & TECHNOLOGY
    84. Li, B; Xie, Y; Huang, JX; Liu, Y; Qian, YT
      A novel method for the preparation of III-V semiconductors: sonochemical synthesis of InP nanocrystals

      ULTRASONICS SONOCHEMISTRY
    85. Guo, DF
      Illumination effect on switching performance of a triangular-barrier resonant-tunnelling diode

      IEE PROCEEDINGS-OPTOELECTRONICS
    86. Sahlaoui, M; Ayadi, A; Fazouan, N; Addou, M; Rouhani, MD; Esteve, D
      Simulation of surface morphology and defects in heteroepitaxied thin films

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    87. Chini, TK; Ghose, SK; Rout, B; Dev, BN; Tanemura, M; Okuyama, F
      Redistribution of Ni implanted into InP

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    88. Colder, A; Levalois, M; Marie, P
      Defect creation kinetics in swift heavy ions, protons and electrons irradiated germanium

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    89. Hicks, RF; Fu, Q; Li, L; Visbeck, SB; Sun, Y; Li, CH; Law, DC
      The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors

      JOURNAL DE PHYSIQUE IV
    90. Masi, M
      Multiscale approach to material synthesis by gas phase deposition

      JOURNAL DE PHYSIQUE IV
    91. Deenapanray, PNK; Jagadish, C
      Effect of stress on impurity-free quantum well intermixing

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    92. Huang, CJ
      Proper annealing for enhanced quality of silicon dioxide thin film on gallium arsenide

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    93. Devabhaktuni, VK; Yagoub, MCE; Fang, YH; Xu, JJ; Zhang, QJ
      Neural networks for microwave modeling: Model development issues and nonlinear modeling techniques

      INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
    94. Shen, JL; Chang, CY; Chou, WC; Wu, MC; Chen, YF
      Temperature dependence of the reflectivity in absorbing Bragg reflectors

      OPTICS EXPRESS
    95. Buyanova, IA; Chen, WM; Monemar, B
      Electronic properties of Ga(In)NAs alloys

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    96. Boldyrev, AI; Wang, LS
      Beyond classical stoichiometry: Experiment and theory

      JOURNAL OF PHYSICAL CHEMISTRY A
    97. Pelekh, A; Carr, RW
      Gas-phase reaction of trimethylgallium and ammonia: Experimental determination of the equilibrium constant and ab initio calculations

      JOURNAL OF PHYSICAL CHEMISTRY A
    98. Yang, B; Chen, G
      Lattice dynamics study of anisotropic heat conduction in superlattices

      MICROSCALE THERMOPHYSICAL ENGINEERING
    99. Deichsel, E; Eberhard, F; Jager, R; Unger, P
      High-power laser diodes with dry-etched mirror facets and integrated monitor photodiodes

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    100. Dulk, M; Dobeli, M; Melchior, H
      Fabrication of saturable absorbers in InGaAsP-InP bulk semiconductor laserdiodes by heavy ion implantation

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS


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Documento generato il 31/05/20 alle ore 04:16:10