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La ricerca find articoli where soggetti phrase all words 'GE-SI ALLOYS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 47 riferimenti
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    1. Louzguine, DV; Inoue, A
      The influence of rare earth metals on the structure of some rapidly solidified Ge- and Si-based alloys

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    2. Inui, M; Matsusaka, T; Ishikawa, D; Sakaguchi, Y; Hong, XG; Kazi, MH; Tamura, K
      EXAFS measurements for liquid Ge-Si alloys

      JOURNAL OF SYNCHROTRON RADIATION
    3. Djurisic, AB; Li, EH
      Modelling the optical constants of SixGe1-x alloys in the range 1.7-5.6 eV

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    4. Ferguson, BA; Reeves, CT; Safarik, DJ; Mullins, CB
      Silicon deposition from disilane on Si(100)-2x1: Microscopic model including adsorption

      JOURNAL OF APPLIED PHYSICS
    5. Mukhopadhyay, AK; Ghosal, P; Prasad, KS; Rao, VVR
      Nature of precipitates and constituent particles present in a ternary Al-Ge-Si alloy

      METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
    6. Janz, S; Baribeau, JM; Lockwood, DJ; McCaffrey, JP; Moisa, S; Rowell, NL; Xu, DX; Lafontaine, H; Pearson, MRT
      Si/Si1-xGex photodetectors using three-dimensional growth modes to enhancephotoresponse at lambda=1550 nm

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    7. Ghosh, S; Weber, J; Presting, H
      Photoluminescence processes in SimGen superlattices

      PHYSICAL REVIEW B
    8. Mamor, M; Ouacha, H; Willander, M; Auret, FD; Goodman, SA; Ouacha, A; Sveinbjornsson, E
      High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions

      APPLIED PHYSICS LETTERS
    9. Saha, C; Ray, SK; Lahiri, SK
      Ion-assisted low-temperature oxidation for fabrication of strained Si1-xGex and Si1-x-yGexCy MOS capacitors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    10. Aubry, JC; Tyliszczak, T; Hitchcock, AP; Baribeau, JM; Jackman, TE
      First-shell bond lengths in SixGe1-x crystalline alloys

      PHYSICAL REVIEW B-CONDENSED MATTER
    11. STARINK MJ; ZAHRA AM
      KINETICS OF ISOTHERMAL AND NONISOTHERMAL PRECIPITATION IN AN AL-6 AT-PERCENT SI ALLOY

      Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties
    12. PERRING L; BUSSY F; GACHON JC
      ISOTHERMAL SECTIONS OF THE RU-SI-GE, RU-GE-SN AND RU-SI-SN SYSTEMS AT900-DEGREES-C

      Journal of alloys and compounds
    13. STARINK MJ; ZAHRA AM
      PRECIPITATION IN A HIGH-SILICON AL-SI ALLOY STUDIED BY ISOTHERMAL CALORIMETRY

      Materials science & engineering. A, Structural materials: properties, microstructure and processing
    14. KEELING LA; CHEN L; GREENLIEF CM
      SURFACE-REACTIONS OF MONOETHYLGERMANE ON SI(100)-(2X1)

      Surface science
    15. CASTRO J; CHIUSSI S; SERRA J; LEON B; PEREZAMOR M; MARTELLI S; LARCIPRETE R; FRANGIS N
      PRODUCTION AND TREATMENT OF SI1-XGEX FILMS BY EXCIMER-LASER ASSISTED TECHNIQUES

      Revista de metalurgia
    16. VANHAAREN B; REGIS M; LLOPIS O; ESCOTTE L; GRUHLE A; MAHNER C; PLANA R; GRAFFEUIL J
      LOW-FREQUENCY NOISE PROPERTIES OF SIGE HBTS AND APPLICATION TO ULTRA-LOW PHASE-NOISE OSCILLATORS

      IEEE transactions on microwave theory and techniques
    17. MAMOR M; AURET FD; GOODMAN SA; MYBURG G
      ELECTRICAL CHARACTERIZATION OF DEFECTS INTRODUCED IN P-SI1-XGEX DURING ELECTRON-BEAM DEPOSITION OF SC SCHOTTKY-BARRIER DIODES

      Applied physics letters
    18. CORNI F; FRABBONI S; TONINI R; LEONE D; DEBOER W; GASPAROTTO A
      THE EFFECT OF BIAXIAL STRESS ON THE SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF GEXSI((1-X)) FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    19. KAKEGAWA K; GLAESER AM
      TRANSIENT FGM JOINING OF SILICON-CARBIDE CERAMICS - A FEASIBILITY STUDY

      Composites. Part B, Engineering
    20. SHUM K; MOONEY PM; TILLY LP; CHU JO
      QUANTUM-CONFINED BIEXCITONS IN SI1-XGEX GROWN ON SI(001)

      Physical review. B, Condensed matter
    21. KIMURA Y; NAKAGAWA K; MIYAO M
      EFFECT OF STRAIN ON LIGHT-EMISSION FROM PSEUDOMORPHIC SI SI1-XGEX/SI STRUCTURES/

      Thin solid films
    22. CHU MA; TANNER MO; HUANG FY; WANG KL; CHU GG; GOORSKY MS
      PHOTOLUMINESCENCE AND X-RAY CHARACTERIZATION OF RELAXED SI1-XGEX ALLOYS GROWN ON SILICON-ON-INSULATOR (SOI) AND IMPLANTED SOI SUBSTRATES

      Journal of crystal growth
    23. MIYAZAKI T; KOZAKAI T
      EXPERIMENTAL AND THEORETICAL INVESTIGATIONS ON PHASE-DIAGRAM OF FE-BASE TERNARY ORDERING ALLOYS

      Journal de chimie physique et de physico-chimie biologique
    24. LAFONTAINE H; HOUGHTON DC; ELLIOT D; ROWELL NL; BARIBEAU JM; LAFRAMBOISE S; SPROULE GI; ROLFE SJ
      CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN USING A COMMERCIALLY AVAILABLE ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION REACTOR

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    25. LIU XH; HUANG DM; JIANG ZM; LU XK; ZHANG XJ; WANG X
      PHOTOLUMINESCENCE FROM TRAPPED EXCITONS IN SI1-XGEX SI QUANTUM-WELL STRUCTURES/

      Journal of physics. Condensed matter
    26. STOEHR M; AUBEL D; JUILLAGUET S; BISCHOFF JL; KUBLER L; BOLMONT D; HAMDANI F; FRAISSE B; FOURCADE R
      PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)

      Physical review. B, Condensed matter
    27. BATSON PE
      ATOMIC-RESOLUTION ELECTRONIC-STRUCTURE IN SILICON-BASED SEMICONDUCTORS

      Journal of Electron Microscopy
    28. ORLOV LK; ALESHKIN VY; KALUGIN NG; BEKIN NA; KUZNETSOV OA; DIETRICH B; BACQUET G; LEOTIN J; BROUSSEAU M; HASSEN F
      EXCITON LUMINESCENCE IN GE-GE1-XSIX MULTIPLE-QUANTUM-WELL STRUCTURES

      Journal of applied physics
    29. CORNI F; FRABBONI S; TONINI R; OTTAVIANI G; QUEIROLO G
      STRESS AND INTERFACE MORPHOLOGY CONTRIBUTIONS IN THE CRYSTALLIZATION KINETICS OF A GEXSI1-X THIN-LAYER ON (100)SI

      Journal of applied physics
    30. RAMANATH G; XIAO HZ; LAI SL; ALLEN LH; ALFORD TL
      AU-MEDIATED LOW-TEMPERATURE SOLID-PHASE EPITAXIAL-GROWTH OF A SIXGE1-X ALLOY ON SI(001)

      Journal of applied physics
    31. LEE JJ; GUTIERREZAITKEN AL; LI SH; BHATTACHARYA PK
      RESPONSIVITY AND IMPACT IONIZATION COEFFICIENTS OF SI1-XGEX PHOTODIODES

      I.E.E.E. transactions on electron devices
    32. KRINGHOJ P; LARSEN AN
      IRRADIATION-INDUCED DEFECT STATES IN EPITAXIAL N-TYPE SI1-XGEX ALLOY LAYERS

      Physical review. B, Condensed matter
    33. ROYSET J; RYUM N
      PRECIPITATION IN SOME DILUTE AL-GE-SI ALLOYS

      Zeitschrift fur Metallkunde
    34. THURER A; RUMMEL G; ZUMKLEY T; FREITAG K; MEHRER H
      TEMPERATURE AND PRESSURE-DEPENDENCE OF GE DIFFUSION IN ALUMINUM

      Physica status solidi. a, Applied research
    35. HITOMI S; TAKARABE K; MINOMURA S; SAKAI J; TATSUMI T
      PHOTOLUMINESCENCE AND RAMAN-SPECTRA OF SI SI1-XGEX STRAINED SUPERLATTICES UNDER HIGH-PRESSURE/

      Journal of physics and chemistry of solids
    36. BATSON PE
      NEAR-ATOMIC-RESOLUTION EELS IN SILICON-GERMANIUM ALLOYS

      Journal of Microscopy
    37. MATSUDA A; GANGULY G
      IMPROVEMENT OF HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS USING LOW-POWER DISILANE-GERMANE DISCHARGES WITHOUT HYDROGEN DILUTION

      Applied physics letters
    38. TILLY LP; MOONEY PM; CHU JO; LEGOUES FK
      NEAR-BAND-EDGE PHOTOLUMINESCENCE IN RELAXED SI1-XGEX LAYERS

      Applied physics letters
    39. PERKOWITZ S; SEILER DG; DUNCAN WM
      OPTICAL CHARACTERIZATION IN MICROELECTRONICS MANUFACTURING

      Journal of research of the National Institute of Standards and Technology
    40. CARAGIANIS C; SHIGESATO Y; PAINE DC
      LOW-TEMPERATURE PASSIVATION OF SI1-XGEX ALLOYS BY DRY HIGH-PRESSURE OXIDATION

      Journal of electronic materials
    41. PAINE DC; KIM TY; CARAGIANIS C; SHIGESATO YZ
      NANOCRYSTALLINE GE SYNTHESIS BY THE CHEMICAL-REDUCTION OF HYDROTHERMALLY GROWN SI0.6GE0.4O2

      Journal of electronic materials
    42. RAJESH K; BRODIE DE
      THE EFFECT OF ION-BOMBARDMENT ON SOME PROPERTIES OF A-SI0.8GE0.2-H ALLOYS PREPARED BY ION-BEAM-ASSISTED REACTIVE EVAPORATION

      Thin solid films
    43. KRINGHOJ P; ELLIMAN RG
      SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF STRAIN-RELAXED SI1-XGEX ALLOY LAYERS

      Physical review letters
    44. WAKAHARA A; HASEGAWA T; KURAMOTO K; VONG KK; SASAKI A
      PHOTOLUMINESCENCE PROPERTIES OF SI1-XGEXSI DISORDERED SUPERLATTICES

      Applied physics letters
    45. BURKE HH; HERMAN IP
      TEMPERATURE-DEPENDENCE OF RAMAN-SCATTERING IN GE1-XSIX ALLOYS

      Physical review. B, Condensed matter
    46. SOREF RA
      SILICON-BASED OPTOELECTRONICS

      Proceedings of the IEEE
    47. JAIN SC; HAYES W
      STRUCTURE, PROPERTIES AND APPLICATIONS OF GEXSI1-X STRAINED LAYERS AND SUPERLATTICES

      Semiconductor science and technology


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Documento generato il 24/10/20 alle ore 00:29:39