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La ricerca find articoli where soggetti phrase all words 'GE FILMS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 65 riferimenti
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    1. Dong, YM; Chen, J; Tang, NY; Ye, CN; Wu, XM; Zhuge, LJ; Yao, WG
      Photoluminescence from Ge-SiO2 thin films and its mechanism

      CHINESE SCIENCE BULLETIN
    2. Othman, AA
      Photo-induced optical changes in amorphous GaS thin films

      RADIATION PHYSICS AND CHEMISTRY
    3. Tyczkowski, J; Kazimierski, P; Grabkowski, J
      Plasma-deposited hydrogenated carbon-germanium semiconducting films doped with acceptor and donor centers

      SURFACE & COATINGS TECHNOLOGY
    4. Erenburg, SB; Bausk, NV; Stepina, NP; Nikiforov, AI; Nenashev, AV; Mazalov, LN
      Microscopic parameters of heterostructures containing nanoclusters and thin layers of Ge in Si matrix

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    5. Erenburg, SB; Bausk, NV; Mazalov, LN; Nikiforov, AI; Stepina, NP; Nenashev, AV
      Surface sensitive mode XAFS measurement of local structure of ordered Ge nanoclusters (quantum dots) on Si(001)

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    6. Wu, XL; Mei, YF; Siu, GG; Wong, KL; Moulding, K; Stokes, MJ; Fu, CL; Bao, XM
      Spherical growth and surface-quasifree vibrations of Si nanocrystallites in Er-doped Si nanostructures

      PHYSICAL REVIEW LETTERS
    7. Choi, WK; Ho, YW; Ng, SP; Ng, V
      Microstructural and photoluminescence studies of germanium nanocrystals inamorphous silicon oxide films

      JOURNAL OF APPLIED PHYSICS
    8. Chen, ZW; Tan, S; Zhang, SY; Hou, JG; Wu, ZQ; Sekine, H
      Dependence of fractal formation on thickness ratio and annealing time in Au/Ge bilayer films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    9. Matsuda, S; Imamura, T; Sunada, J; Tatsumoto, H
      Ultraviolet photoconduction of TiO2/Ge bilayer film

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Shen, JK; Wu, XL; Bao, XM; Yuan, RK; Zou, JP; Tan, C
      Strong violet emission from Ge-SiO2 co-sputtered films annealed in O-2 atmosphere

      PHYSICS LETTERS A
    11. Siegel, J; Solis, J; Afonso, CN
      The need of sub-nanosecond resolution to reveal new features during laser induced solidification

      APPLIED SURFACE SCIENCE
    12. Solis, J; Siegel, J; Afonso, CN
      Real-time optical measurements with picosecond resolution during laser induced transformations

      REVIEW OF SCIENTIFIC INSTRUMENTS
    13. Bondar, NV; Davydova, NA; Tishchenko, VV; Vlcek, M
      Bond-conversion model for photoinduced effects in glassy Ge-S chalcogenides

      JOURNAL OF MOLECULAR STRUCTURE
    14. Rodrigues, W; Sakata, O; Lee, TL; Walko, DA; Marasco, DL; Bedzyk, MJ
      X-ray scattering studies of surfactant mediated epitaxial growth of Si/Ge/Si(001) heterostructures

      JOURNAL OF APPLIED PHYSICS
    15. Shen, JK; Wu, XL; Yuan, RK; Tang, N; Zou, JP; Mei, YF; Tan, C; Bao, XM; Siu, GG
      Enhanced ultraviolet photoluminescence from SiO2/Ge : SiO2/SiO2 sandwichedstructure

      APPLIED PHYSICS LETTERS
    16. Missana, T; Afonso, CN; Petford-Long, AK; Doole, RC
      Amorphous-to-nanocrystalline transformations kinetics in SbOx films

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    17. Mazurczyk, R
      Semiconductor superlattices

      CHAOS SOLITONS & FRACTALS
    18. Gazicki, M
      Plasma deposition of thin carbon/germanium alloy films from organogermanium compounds

      CHAOS SOLITONS & FRACTALS
    19. Jiao, CQ; Garscadden, A; DeJoseph, C; Haaland, PD
      Ionization of tetraethylgermanium, GeEt4

      JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS
    20. del Coso, R; Perea, A; Serna, R; Chaos, JA; Gonzalo, J; Solis, J
      Critical parameters influencing the material distribution produced by pulsed laser deposition

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    21. Oechsner, H; Scheib, M; Goebel, H
      ECWR-plasma CVD as a novel technique for phase controlled deposition of semiconductor films

      THIN SOLID FILMS
    22. Liu, JP; Gong, Q; Huang, DD; Li, JP; Sun, DZ; Kong, MY
      Evolution of height distribution of Ge islands on Si(1 0 0)

      JOURNAL OF CRYSTAL GROWTH
    23. KHOR KE; SARMA SD
      EQUILIBRIUM CRITICAL THICKNESS FOR STRAINED-LAYER GROWTH

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    24. TING SM; FITZGERALD EA; SIEG RM; RINGEL SA
      RANGE OF DEFECT MORPHOLOGIES ON GAAS GROWN ON OFFCUT (001)GE SUBSTRATES

      Journal of electronic materials
    25. SUO ZG; ZHANG ZY
      EPITAXIAL-FILMS STABILIZED BY LONG-RANGE FORCES

      Physical review. B, Condensed matter
    26. GAZICKI M; LEDZION R; MAZURCZYK R; PAWLOWSKI S
      DEPOSITION AND PROPERTIES OF GERMANIUM CARBON FILMS DEPOSITED FROM TETRAMETHYLGERMANIUM IN A PARALLEL-PLATE RF DISCHARGE/

      Thin solid films
    27. Pinto, N; Murri, R; Rinaldi, R
      Cluster-size distribution of SiGe alloys grown by MBE

      THIN SOLID FILMS
    28. POPESCU M; SAVA F; LORINCZI A; SKORDEVA E; KOCH PJ; BRADACZEK H
      PHOTOINDUCED SOFTENING AND HARDENING IN GE-AS-S AMORPHOUS FILMS

      Journal of non-crystalline solids
    29. UEDA S; MIN H; KUMEDA M; SHIMIZU T
      HYDROGEN INCORPORATION SCHEME IN A-GE-N-H FILMS STUDIED BY NMR AND IRMEASUREMENTS

      Journal of non-crystalline solids
    30. DAVYDOVA NA; TISHCHENKO VV; BARAN J; VLCEK M
      PHOTOINDUCED REVERSIBLE CHANGES IN LOCAL BONDING CONFIGURATION OF AMORPHOUS GE-S THIN-FILMS

      Journal of molecular structure
    31. ZHOU GF; JACOBS BAJ; VANESSPIEKMAN W
      LASER-INDUCED CRYSTALLIZATION IN GE-SB-TE OPTICAL-RECORDING MATERIALS

      Materials science & engineering. A, Structural materials: properties, microstructure and processing
    32. VILA A; CORNET A; MORANTE JR
      MORPHOLOGY OF ISLAND NUCLEI IN EPITAXIAL GAAS SI/

      Materials letters
    33. MULATO M; TOET D; AICHMAYR G; SANTOS PV
      SHORT-PULSE LASER-INDUCED CRYSTALLIZATION OF INTRINSIC AND HYDROGENATED AMORPHOUS-GERMANIUM THIN-FILMS

      Journal of applied physics
    34. MULATO M; TOET D; AICHMAYR G; SANTOS PV; CHAMBOULEYRON I
      LASER CRYSTALLIZATION AND STRUCTURING OF AMORPHOUS-GERMANIUM

      Applied physics letters
    35. UCHIBORI CJ; OKU T; KAMEYA N; ONO N; MURAKAMI M
      EFFECTS OF DEPOSITION SEQUENCE ON ELECTRICAL-PROPERTIES OF INAS-NI-W OHMIC CONTACTS TO N-TYPE GAAS

      Materials transactions, JIM
    36. ROLAND C
      EFFECTS OF STRESS ON STEP ENERGIES AND SURFACE-ROUGHNESS

      MRS bulletin
    37. AUBEL D; KUBLER L; BISCHOFF JL; SIMON L; BOLMONT D
      X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001)

      Applied surface science
    38. MATSUO Y; OISHI K
      OXIDE THICKNESS DEPENDENCE OF PHOTOCURRENT FOR THE GEO2 GE FILM SYSTEM/

      Applied surface science
    39. NAKAO S; SAITOH K; IKEYAMA M; NIWA H; TANEMURA S; MIYAGAWA Y; MIYAGAWA S
      MICROSTRUCTURE OF GERMANIUM FILMS CRYSTALLIZED BY HIGH-ENERGY ION IRRADIATION

      Thin solid films
    40. HAMMAR M; LEGOUES FK; TERSOFF J; REUTER MC; TROMP RM
      IN-SITU ULTRAHIGH-VACUUM TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF HETEROEPITAXIAL GROWTH .1. SI(001) GE/

      Surface science
    41. HUANG WC; LEE CL
      AUGEPT OHMIC CONTACT TO N-TYPE INP

      Journal of applied physics
    42. BERLICKI TM; MURAWSKI E; MUSZYNSKI M; OSADNIK SJ; PROCIOW EL
      THIN-FILM THERMOCOUPLES OF GE DOPED WITH AU AND B

      Sensors and actuators. A, Physical
    43. CHOPRA KL
      MY EXPERIMENTS WITH THIN-FILMS - THE NANOSTATE OF MATTER

      Bulletin of Materials Science
    44. LU Q; BRAMBLETT TR; HASAN MA; LEE NE; GREENE JE
      B INCORPORATION IN GE(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXYFROM GE2H6 AND B2H6

      Journal of applied physics
    45. BRAMBLETT TR; LU Q; LEE NE; TAYLOR N; HASAN MA; GREENE JE
      GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING

      Journal of applied physics
    46. BETHOUX O; BRUSETTI R; LASJAUNIAS JC; SAHLING S
      AU-GE FILM THERMOMETERS FOR TEMPERATURE-RANGE 30 MK-300 K

      Cryogenics
    47. JAKOUBKOVA M; BASTL Z; FIEDLER P; POLA J
      IR LASER THERMOLYSIS OF TETRAMETHYLGERMANE FOR CVD OF GERMANIUM

      Infrared physics & technology
    48. YU QM; CLANCY P
      MOLECULAR-DYNAMICS SIMULATION OF THE SURFACE RECONSTRUCTION AND STRAIN RELIEF IN SI1-XGEX SI(100) HETEROSTRUCTURES/

      Modelling and simulation in materials science and engineering
    49. DRUSEDAU TP; ANNEN A; SCHRODER B; FREISTEDT H
      VIBRATIONAL, OPTICAL AND ELECTRONIC-PROPERTIES OF THE HYDROGENATED AMORPHOUS GERMANIUM-CARBON ALLOY SYSTEM

      Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties
    50. ROUHANI MD; SAHLAOUI M; GUE AM; ESTEVE D
      ROUGHENING AND FACETING IN LATTICE-MISMATCHED HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS - A MONTE-CARLO STUDY

      Materials science & engineering. B, Solid-state materials for advanced technology
    51. CULLIS AG
      THE MORPHOLOGY AND MISFIT DISLOCATION FORMATION CHARACTERISTICS OF STRAINED HETEROEPITAXIAL LAYERS - EX-SITU AND IN-SITU GROWTH-STUDIES

      Scanning microscopy
    52. BENICEWICZ PK; ROBERTS JP; TAYLOR AJ
      SCALING OF TERAHERTZ RADIATION FROM LARGE-APERTURE BIASED PHOTOCONDUCTORS

      Journal of the Optical Society of America. B, Optical physics
    53. PHANG YH; TEICHERT C; LAGALLY MG; PETICOLOS LJ; BEAN JC; KASPER E
      CORRELATED-INTERFACIAL-ROUGHNESS ANISOTROPY IN SI1-XGEX SI SUPERLATTICES/

      Physical review. B, Condensed matter
    54. TEROVANESYAN E; MANASSEN Y; SHACHAL D
      ORDERING OF AMORPHOUS-SILICON DURING SOLID-PHASE EPITAXY STUDIED BY SCANNING-TUNNELING-MICROSCOPY

      Physical review. B, Condensed matter
    55. PANWAR OS; MOORE RA; RAZA SH; GAMBLE HS; ARMSTRONG BM
      COMPARATIVE-STUDY OF LARGE GRAINS AND HIGH-PERFORMANCE TFTS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AND APCVD AMORPHOUS-SILICON FILMS

      Thin solid films
    56. TAMAGAWA T; SHINTANI T; UEBA H; TATSUYAMA C; NAKAGAWA K; MIYAO M
      STRUCTURAL CHARACTERIZATION OF SI GE SUPERLATTICES GROWN ON AN SI(001) SURFACE BY MOLECULAR-BEAM EPITAXY/

      Thin solid films
    57. OSTEN HJ
      MODIFICATION OF GROWTH MODES IN LATTICE-MISMATCHED EPITAXIAL SYSTEMS - SI GE/

      Physica status solidi. a, Applied research
    58. OSTEN HJ; ZEINDL HP; BUGIEL E
      CONSIDERATIONS ABOUT THE CRITICAL THICKNESS FOR PSEUDOMORPHIC SI1-XGEX GROWTH ON SI(001)

      Journal of crystal growth
    59. OSTEN HJ
      KINETIC SUPPRESSION OF ISLANDING IN IMPURITY-MEDIATED HETEROEPITAXIALGROWTH OF GERMANIUM ON SILICON

      Applied physics letters
    60. ROLAND C; GILMER GH
      GROWTH OF GERMANIUM FILMS ON SI(001) SUBSTRATES

      Physical review. B, Condensed matter
    61. SPENCER BJ; DAVIS SH; VOORHEES PW
      MORPHOLOGICAL INSTABILITY IN EPITAXIALLY STRAINED DISLOCATION-FREE SOLID FILMS - NONLINEAR EVOLUTION

      Physical review. B, Condensed matter
    62. OSTEN HJ; KLATT J; LIPPERT G; BUGIEL E
      SURFACTANT-MEDIATED GROWTH OF GERMANIUM ON SI(100) BY MBE AND SPE

      Journal of crystal growth
    63. COON PA; WISE ML; GEORGE SM
      ADSORPTION-KINETICS FOR ETHYLSILANE, DIETHYLSILANE, AND DIETHYLGERMANE ON SI(111) 7X7

      The Journal of chemical physics
    64. OSTEN HJ; KLATT J; LIPPERT G; BUGIEL E; HIGUCHI S
      SURFACTANT-MEDIATED GROWTH OF GERMANIUM ON SILICON (001) WITH SUBMONOLAYER COVERAGE OF SB AND TE

      Journal of applied physics
    65. SPENCER BJ; VOORHEES PW; DAVIS SH
      MORPHOLOGICAL INSTABILITY IN EPITAXIALLY STRAINED DISLOCATION-FREE SOLID FILMS - LINEAR-STABILITY THEORY

      Journal of applied physics


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Documento generato il 22/10/20 alle ore 09:30:34