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La ricerca find articoli where soggetti phrase all words 'GE(001)' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 145 riferimenti
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    1. Bunk, O; Nielsen, MM; Zeysing, JH; Falkenberg, G; Berg-Rasmussen, F; Nielsen, M; Kumpf, C; Su, Y; Feidenhans'l, R; Johnson, RL
      Ge(001)-((2)(1)(0)(3))-Pb <->((2)(1)(0)(6))-Pb: low-temperature two-dimensional phase transition

      NEW JOURNAL OF PHYSICS
    2. Vasco, E; Zaldo, C; Vazquez, L
      Growth evolution of ZnO films deposited by pulsed laser ablation

      JOURNAL OF PHYSICS-CONDENSED MATTER
    3. Dalpian, GM; Fazzio, A; da Silva, AJR
      Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)

      COMPUTATIONAL MATERIALS SCIENCE
    4. Chan, LH; Altman, EI; Liang, Y
      Development of procedures for obtaining clean, low-defect-density Ge(100) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    5. Chason, E; Erlebacher, J; Aziz, MJ; Floro, JA; Sinclair, MB
      Dynamics of pattern formation during low-energy ion bombardment of Si(001)

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    6. Hwang, CC; Kang, TH; Kim, KJ; Kim, B; Chung, Y; Park, CY
      Temperature-induced metallization of the Si(100) surface - art. no. 201304

      PHYSICAL REVIEW B
    7. Bulbul, MM; Cakmak, M; Srivastava, GP; Colakoglu, K
      Effect of hydrogenation on the adsorption of Ge on Si(001) - art. no. 155318

      PHYSICAL REVIEW B
    8. Romero, MT; Rodriguez, JA; Takeuchi, N
      First-principles calculations of the adsorption of S on the Si(001)c(4X2) surface - art. no. 075317

      PHYSICAL REVIEW B
    9. Falkenberg, G; Johnson, RL; Takeuchi, N
      Scanning tunneling microscopy and ab initio calculations: c(4X8) reconstructions of Pb on Si and Ge(001) - art. no. 035304

      PHYSICAL REVIEW B
    10. Cai, J; Wang, JS
      Reconstruction of Si(001) and adsorption of Si adatoms and ad-dimers on the surface: Many-body potential calculations - art. no. 035402

      PHYSICAL REVIEW B
    11. Chan, LH; Altman, EI
      Effect of surface intermixing on the morphology of Sb-terminated Ge(100) surfaces - art. no. 195309

      PHYSICAL REVIEW B
    12. Okada, H; Fujimoto, Y; Endo, K; Hirose, K; Mori, Y
      Detailed analysis of scanning tunneling microscopy images of the Si(001) reconstructed surface with buckled dimers - art. no. 195324

      PHYSICAL REVIEW B
    13. Raviswaran, A; Liu, CP; Kim, J; Cahill, DG; Gibson, JM
      Evolution of coherent islands during strained-layer Volmer-Weber growth ofSi on Ge(111) - art. no. 125314

      PHYSICAL REVIEW B
    14. Le Thanh, V
      New insight into the kinetics of Stranski-Krastanow growth of Ge on Si(001)

      SURFACE SCIENCE
    15. Ferrari, L; Pedio, M; Barrett, N; Gunnella, R; Capozi, M; Ottaviani, C; Perfetti, P
      Photoelectron diffraction study on Ge(100) 3d core level

      SURFACE SCIENCE
    16. Bulavenko, SY; Koval, IF; Melnik, PV; Nakhodkin, NG; Zandvliet, HJW
      STM investigation of the initial adsorption stage of Bi on Si(100)-(2 x 1)and Ge(100)-(2 x 1) surfaces

      SURFACE SCIENCE
    17. Nakamura, Y; Kondo, Y; Nakamura, J; Watanabe, S
      STM images apparently corresponding to a stable structure: Considerable fluctuation of a phase boundary of the Si(111)-(root 3 x root 3)-Ag surface -art. no. 156102

      PHYSICAL REVIEW LETTERS
    18. Koch, R; Wedler, G; Schulz, JJ; Wassermann, B
      Minute SiGe quantum dots on Si(001) by a kinetic 3D island mode - art. no.136104

      PHYSICAL REVIEW LETTERS
    19. da Silva, AJR; Dalpian, GM; Janotti, A; Fazzio, A
      Two-atom structures of Ge on Si(100): Dimers versus adatom pairs - art. no. 036104

      PHYSICAL REVIEW LETTERS
    20. Costantini, G; de Mongeot, EB; Boragno, C; Valbusa, U
      Is ion sputtering always a "Negative Homoepitaxial Deposition"?

      PHYSICAL REVIEW LETTERS
    21. Hata, K; Sainoo, Y; Shigekawa, H
      Atomically resolved local variation of the barrier height of the flip-flopmotion of single buckled dimers of Si(100)

      PHYSICAL REVIEW LETTERS
    22. Yu, CT; Li, DQ; Pearson, J; Bader, SD
      Self-assembled metallic dots and antidots: Epitaxial Co on Ru(0001)

      APPLIED PHYSICS LETTERS
    23. Taraci, J; Tolle, J; Kouvetakis, J; McCartney, MR; Smith, DJ; Menendez, J; Santana, MA
      Simple chemical routes to diamond-cubic germanium-tin alloys

      APPLIED PHYSICS LETTERS
    24. Kahng, SJ; Ha, YH; Moon, DW; Kuk, Y
      Strained Ge overlayer on a Si(001)-(2X1) surface

      PHYSICAL REVIEW B
    25. Zandvliet, HJW
      Determination of Ge(001) step free energies

      PHYSICAL REVIEW B
    26. Koch, R; Wassermann, B; Wedler, G
      On the role of interdiffusion during the growth of Ge on Si(001) and Si(111)

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    27. Pchelyakov, OP; Bolkhovityanov, YB; Sokolov, LV; Nikiforov, AI; Voigtlander, B
      Molecular beam epitaxy of nanostructures based on silicon and germanium

      IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
    28. Chretien, O; Stoica, T; Dentel, D; Mateeva, E; Vescan, L
      Influence of the mesa size on Ge island electroluminescence properties

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    29. Fujino, T; Katayama, M; Yamazaki, Y; Inoue, S; Ryu, JT; Oura, K
      Ion scattering and recoiling spectroscopy for real time monitoring of surface processes in a gas phase atmosphere

      SURFACE REVIEW AND LETTERS
    30. Renaud, G
      X-ray diffraction for surfaces and buried interfaces

      SURFACE REVIEW AND LETTERS
    31. Castrucci, P; Gunnella, R; Pinto, N; Bernardini, R; De Crescenzi, M; Sacchi, M
      Near edge X-ray absorption and X-ray photoelectron diffraction studies of the structural environment of Ge-Si systems

      SURFACE REVIEW AND LETTERS
    32. Nakajima, K; Konishi, A; Kimura, K
      Intermixing at Ge/Si(001) interfaces studied by high-resolution RBS

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    33. Power, JR; Hinrichs, K; Peters, S; Haberland, K; Esser, N; Richter, W
      Sb-mediated Ge growth on singular and vicinal Si(001) surfaces: A surface optical characterization study

      PHYSICAL REVIEW B
    34. Sakata, O; Lyman, PF; Tinkham, BP; Walko, DA; Marasco, DL; Lee, TL; Bedzyk, MJ
      X-ray scattering study of the Ge(001): Te(1X1) surface structure

      PHYSICAL REVIEW B
    35. Williams, RS; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA
      Thermodynamics of the size and shape of nanocrystals: Epitaxial Ge on Si(001)

      ANNUAL REVIEW OF PHYSICAL CHEMISTRY
    36. Sumitomo, K; Shiraishi, K; Kobayashi, Y; Ito, T; Ogino, T
      Surface segregation and interdiffusion of Ge on Si(001) studied by medium-energy ion scattering

      THIN SOLID FILMS
    37. Tegenkamp, C; Ernst, W; Eichmann, M; Pfnur, H
      Stepped NaCl films grown epitaxially on Si-precovered vicinal Ge(100)

      SURFACE SCIENCE
    38. Nitta, Y; Shibata, M; Fujita, K; Ichikawa, M
      Nanometer-scale Ge selective growth on Si(001) using ultrathin SiO2 film

      SURFACE SCIENCE
    39. Kim, JH; Weiss, AH
      The effect of adsorbed atomic hydrogen on the growth of ultrathin silicon films on Ge(100) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)

      SURFACE SCIENCE
    40. Goldfarb, I; Briggs, GAD
      Self-assembled metal-semiconductor compound nanocrystals on Group IV semiconductor surfaces

      SURFACE SCIENCE
    41. Yang, HQ; Zhu, CX; Xue, ZQ; Pang, SJ
      Atomic structures of kinks at double-layer steps on Si(100) surfaces

      SURFACE SCIENCE
    42. Ohtake, A; Ozeki, M; Nakamura, J
      Strain relaxation in InAs/GaAs(111)A heteroepitaxy

      PHYSICAL REVIEW LETTERS
    43. Uberuaga, BP; Leskovar, M; Smith, AP; Jonsson, H; Olmstead, M
      Diffusion of Ge below the Si(100) surface: Theory and experiment

      PHYSICAL REVIEW LETTERS
    44. Shimokawa, S; Namiki, A; Gamo, MN; Ando, T
      Temperature dependence of atomic hydrogen-induced surface processes on Ge(100): Thermal desorption, abstraction, and collision-induced desorption

      JOURNAL OF CHEMICAL PHYSICS
    45. Rodrigues, W; Sakata, O; Lee, TL; Walko, DA; Marasco, DL; Bedzyk, MJ
      X-ray scattering studies of surfactant mediated epitaxial growth of Si/Ge/Si(001) heterostructures

      JOURNAL OF APPLIED PHYSICS
    46. Kahng, SJ; Ha, YH; Moon, DW; Kuk, Y
      Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

      APPLIED PHYSICS LETTERS
    47. Smilauer, P; Rost, M; Krug, J
      Fast coarsening in unstable epitaxy with desorption

      PHYSICAL REVIEW E
    48. Drotar, JT; Zhao, YP; Lu, TM; Wang, GC
      Numerical analysis of the noisy Kuramoto-Sivashinsky equation in 2+1 dimensions

      PHYSICAL REVIEW E
    49. Nelen, LM; Fuller, K; Greenlief, CM
      Adsorption and decomposition of H2S on the Ge(100) surface

      APPLIED SURFACE SCIENCE
    50. Falkenberg, G; Johnson, RL
      Adsorbate-induced faceting of high-index semiconductor surfaces: antimony adsorbed on Ge(103)

      APPLIED SURFACE SCIENCE
    51. Bunk, O; Falkenberg, G; Zeysing, JH; Lottermoser, L; Johnson, RL; Nielsen, M; Berg-Rasmussen, F; Feidenhans'l, R
      Structure determination of the indium-induced Ge(103)-(1 X 1) reconstruction by surface X-ray diffraction

      APPLIED SURFACE SCIENCE
    52. Murty, MVR; Curcic, T; Judy, A; Cooper, BH; Woll, AR; Brock, JD; Kycia, S; Headrick, RL
      Real-time x-ray scattering study of surface morphology evolution during ion erosion and epitaxial growth of Au(111)

      PHYSICAL REVIEW B-CONDENSED MATTER
    53. Savage, DE; Liu, F; Zielasek, V; Lagally, MG
      Fundamental mechanisms of film growth

      GERMANIUM SILICON: PHYSICS AND MATERIALS
    54. Kawamura, T; Natori, T
      Extended solid-on-solid model for heteroepitaxial growth

      SURFACE SCIENCE
    55. Pinto, N; Tombolini, F; Murri, R; De Crescenzi, M; Casalboni, M; Barucca, G; Majni, G
      Photoluminescence investigation of short period silicon-germanium heterostructures grown using molecular beam epitaxy

      SURFACE SCIENCE
    56. Ahn, JR; Kim, CY; Chung, JW
      Ge-induced surface reconstructions on the 4 degrees vicinal Si(100) surface

      SOLID STATE COMMUNICATIONS
    57. Murty, MVR; Cooper, BH
      Instability in molecular beam epitaxy due to fast edge diffusion and corner diffusion barriers

      PHYSICAL REVIEW LETTERS
    58. Li, L; Han, BK; Fu, Q; Hicks, RF
      Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction

      PHYSICAL REVIEW LETTERS
    59. Sato, T; Iwatsuki, M; Tachihara, H
      Detection of the flip-flop motion of buckled dimers on a Ge(001) surface by STM

      JOURNAL OF ELECTRON MICROSCOPY
    60. Goldfarb, I; Briggs, GAD
      The effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-xSi(0 0 1) gas-source growth

      JOURNAL OF CRYSTAL GROWTH
    61. Yang, C; Kang, HC
      Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces

      JOURNAL OF CHEMICAL PHYSICS
    62. Taylor, N; Kim, H; Spila, T; Eades, JA; Glass, G; Desjardins, P; Greene, JE
      Growth of Si1-xGex(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

      JOURNAL OF APPLIED PHYSICS
    63. Williams, RS; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA
      Chemical thermodynamics of the size and shape of strained Ge nanocrystals grown of Si(001)

      ACCOUNTS OF CHEMICAL RESEARCH
    64. Kurokawa, S; Yamashita, H; Yoshikawa, J; Sakai, A
      Barrier-height imaging of oxygen-adsorbed Si(001)2 x 1 and Ge(001)2 x 1 surfaces

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. Hata, K; Kimura, T; Sainoo, Y; Miyake, K; Morita, R; Yamashita, M; Shigekawa, H
      Spontaneous fluctuation between symmetric and buckled dimer domains of Si(100) at 80 K

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    66. LIU F; LAGALLY MG
      STRAIN-INDUCED SELF-ORGANIZATION OF STEPS AND ISLANDS IN SIGE SI MULTILAYER FILMS/

      Metallurgical and materials transactions. A, Physical metallurgy andmaterials science
    67. FUKUDA T; OGINO T
      STM STUDY OF THE INITIAL OXIDATION STAGE OF GE(100)2X1

      Applied physics A: Materials science & processing
    68. NIELSEN M; FEIDENHANSL R; RASMUSSEN FB; BAKER J; FALKENBERG G; LOTTERMOSER L; JOHNSON RL; STEINFORT AJ; SCHOLTE PML
      EPITAXIAL CLUSTERS STUDIED BY SYNCHROTRON X-RAY-DIFFRACTION AND SCANNING-TUNNELING-MICROSCOPY

      Physica. B, Condensed matter
    69. DECRESCENZI M; GUNNELLA R; CASTRUCCI P; DAVOLI I
      LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING

      Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics
    70. Lee, SM; Kim, EJ; Lee, YH; Kim, NG
      Ge(Si) ordering on a double-layer, stepped Si(Ge)(001) surface

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    71. SUMITOMO K; NISHIOKA T; OGINO T
      DIMER STRUCTURES OF GE SI(001) AND SB/SI(001) STUDIED BY MEDIUM-ENERGY ION-SCATTERING/

      Applied surface science
    72. TUTUNCU HM; JENKINS SJ; SRIVASTAVA GP
      A STUDY OF ATOMIC VIBRATIONS ON SI(001)(2X1)-GE

      Applied surface science
    73. WHITTLE R; SAIZPARDO R; GARCIAVIDAL FJ; FLORES F
      LCAO CALCULATIONS OF SULFUR INTERLAYERS ON GE(001) AND SI(001)-K INTERFACES

      Applied surface science
    74. MEDEIROSRIBEIRO G; KAMINS TI; OHLBERG DAA; WILLIAMS RS
      ANNEALING OF GE NANOCRYSTALS ON SI(001) AT 550-DEGREES-C - METASTABILITY OF HUTS AND THE STABILITY OF PYRAMIDS AND DOMES

      Physical review. B, Condensed matter
    75. MEN FK; HSU CR
      GE SI(001)-2XN - SURFACE STRESS AND INTERACTION OF DIMER VACANCY LINES/

      Physical review. B, Condensed matter
    76. LAINE AD; DESETA M; CEPEK C; VANDRE S; GOLDONI A; FRANCO N; AVILA J; ASENSIO MC; SANCROTTI M
      SURFACE PHASE-TRANSITIONS OF GE(100) FROM TEMPERATURE-DEPENDENT VALENCE-BAND PHOTOEMISSION

      Physical review. B, Condensed matter
    77. WHITEAKER KL; ROBINSON IK; VANNOSTRAND JE; CAHILL DG
      COMPOSITIONAL ORDERING IN SIGE ALLOY THIN-FILMS

      Physical review. B, Condensed matter
    78. Lu, ZY; Chiarotti, GL; Scandolo, S; Tosatti, E
      Atomic and electronic structure of ideal and reconstructed alpha-Sn (100) surfaces

      PHYSICAL REVIEW B-CONDENSED MATTER
    79. DEPADOVA P; FELICI R; LARCIPRETE R; FERRARI L; ORTEGA L; FORMOSO V; COMIN F; BALERNA A
      COMBINED HIGH-RESOLUTION X-RAY-DIFFRACTION AND EXAFS STUDIES OF SI(1-X)GE-X HETEROSTRUCTURES

      Thin solid films
    80. MURTY MVR; COWLES B; COOPER BH
      SURFACE SMOOTHING DURING SPUTTERING - MOBILE VACANCIES VERSUS ADATOM DETACHMENT AND DIFFUSION

      Surface science
    81. CHAN ACT; WANG GC
      ROUGHNESS EVOLUTION OF SI(111) BY LOW-ENERGY ION-BOMBARDMENT

      Surface science
    82. TAKEUCHI N
      FIRST-PRINCIPLES CALCULATIONS OF LOW-COVERAGE PHASES OF PB ON THE (100) SURFACE OF GE

      Surface science
    83. LAINE AD; DESETA M; CEPEK C; VANDRE S; GOLDONI A; FRANCO N; AVILA J; ASENSIO MC; SANCROTTI M
      SURFACE PHASE-TRANSITIONS OF GE(100) STUDIED VIA VALENCE-BAND PHOTOEMISSION

      Surface science
    84. TOCHIHARA H; NAKAMURA Y; KAWAI H; NAKAYAMA M; SATO T; SUEYOSHI T; AMAKUSA T; IWATSUKI M
      LITTLE INFLUENCE OF KINKS ON THE FORMATION OF C(4X2) DOMAINS IN A SI(001) SURFACE AT LOW-TEMPERATURE

      Journal of the Physical Society of Japan
    85. RUSPONI S; COSTANTINI G; BORAGNO C; VALBUSA U
      SCALING LAWS OF THE RIPPLE MORPHOLOGY ON CU(110)

      Physical review letters
    86. CHOI JW; DOWBEN PA; PEBLEY S; BUNE AV; DUCHARME S; FRIDKIN VM; PALTO SP; PETUKHOVA N
      CHANGES IN METALLICITY AND ELECTRONIC-STRUCTURE ACROSS THE SURFACE FERROELECTRIC TRANSITION OF ULTRATHIN CRYSTALLINE POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) COPOLYMERS

      Physical review letters
    87. MURTY MVR; CURCIC T; JUDY A; COOPER BH; WOLL AR; BROCK JD; KYCIA S; HEADRICK RL
      X-RAY-SCATTERING STUDY OF THE SURFACE-MORPHOLOGY OF AU(111) DURING AR+ ION IRRADIATION

      Physical review letters
    88. Pinto, N; Tombolini, F; Murri, R; De Crescenzi, M; Casalboni, M; Barucca, G; Majni, G
      Short period (Si6Ge4)(p) superlattices: photoluminescence and electron microscopy study

      JOURNAL OF LUMINESCENCE
    89. Hu, JJ; Tanaka, N
      Direct atomic observation of Ge/(001)Si interfaces by image processing methods in high-resolution electron microscopy

      JOURNAL OF ELECTRON MICROSCOPY
    90. CAKMAK M; SRIVASTAVA GP
      ADSORPTION AND DESORPTION OF S ON AND OFF SI(001) STUDIED BY AB-INITIO DENSITY-FUNCTIONAL THEORY

      Journal of applied physics
    91. GOTHELID M; LELAY G; WIGREN C; BJORKQVIST M; RAD M; KARLSSON UO
      ETCHING AND A DISORDERED OVERLAYER ON THE GE(100)-S SURFACE

      Applied surface science
    92. TUTUNCU HM; JENKINS SJ; SRIVASTAVA GP
      THEORETICAL-STUDIES OF ATOMIC VIBRATIONS ON THE SI(001)(2X1) SURFACE

      Physical review. B, Condensed matter
    93. WORMEESTER H; WENTINK DJ; VANSILFHOUT A
      ISOTROPIC AND ANISOTROPIC CONTRIBUTIONS TO THE OPTICAL REFLECTION OF SI(001)-2X1

      Physical review. B, Condensed matter
    94. FUKUDA T; OGINO T
      INITIAL OXYGEN REACTION ON GE(100) 2X1 SURFACES

      Physical review. B, Condensed matter
    95. GAI Z; ZHAO RG; JI H; LI XW; YANG WS
      ATOMIC-STRUCTURE OF HIGH-INDEX GE SURFACES CONSISTING OF PERIODIC NANOSCALE FACETS

      Physical review. B, Condensed matter
    96. YOKOYAMA T; TAKAYANAGI K
      DIMER BUCKLING INDUCED BY SINGLE-DIMER VACANCIES ON THE SI(001) SURFACE NEAR T-C

      Physical review. B, Condensed matter
    97. TAKEUCHI N
      SYMMETRICAL SB DIMERS AND THE POSSIBILITY OF MIXED SI-GE LAYERS IN THE SB GE/SI(100) SURFACE/

      Physical review. B, Condensed matter
    98. UKRAINTSEV VA; DOHNALEK Z; YATES JT
      ELECTRONIC CHARACTERIZATION OF DEFECT SITES ON SI(001)-(2X1) BY STM

      Surface science
    99. LIU F; LAGALLY MG
      SELF-ORGANIZED NANOSCALE STRUCTURES IN SI GE FILMS/

      Surface science
    100. IKEDA A; SUMITOMO K; NISHIOKA T; YASUE T; KOSHIKAWA T; KIDO Y
      INTERMIXING AT GE SI(001) INTERFACES STUDIED BY SURFACE-ENERGY LOSS OF MEDIUM-ENERGY ION-SCATTERING/

      Surface science


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Documento generato il 15/01/21 alle ore 19:45:38