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1. Bunk, O; Nielsen, MM; Zeysing, JH; Falkenberg, G; Berg-Rasmussen, F; Nielsen, M; Kumpf, C; Su, Y; Feidenhans'l, R; Johnson, RL
   Ge(001)-((2)(1)(0)(3))-Pb <->((2)(1)(0)(6))-Pb: low-temperature two-dimensional phase transition
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2. Vasco, E; Zaldo, C; Vazquez, L
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3. Dalpian, GM; Fazzio, A; da Silva, AJR
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4. Chan, LH; Altman, EI; Liang, Y
   Development of procedures for obtaining clean, low-defect-density Ge(100) surfaces
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5. Chason, E; Erlebacher, J; Aziz, MJ; Floro, JA; Sinclair, MB
   Dynamics of pattern formation during low-energy ion bombardment of Si(001)
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6. Hwang, CC; Kang, TH; Kim, KJ; Kim, B; Chung, Y; Park, CY
   Temperature-induced metallization of the Si(100) surface - art. no. 201304
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7. Bulbul, MM; Cakmak, M; Srivastava, GP; Colakoglu, K
   Effect of hydrogenation on the adsorption of Ge on Si(001) - art. no. 155318
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8. Romero, MT; Rodriguez, JA; Takeuchi, N
   First-principles calculations of the adsorption of S on the Si(001)c(4X2) surface - art. no. 075317
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9. Falkenberg, G; Johnson, RL; Takeuchi, N
   Scanning tunneling microscopy and ab initio calculations: c(4X8) reconstructions of Pb on Si and Ge(001) - art. no. 035304
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10. Cai, J; Wang, JS
    Reconstruction of Si(001) and adsorption of Si adatoms and ad-dimers on the surface: Many-body potential calculations - art. no. 035402
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    J. Cai e J.S. Wang, "Reconstruction of Si(001) and adsorption of Si adatoms and ad-dimers on the surface: Many-body potential calculations - art. no. 035402", PHYS REV B, 6403(3), 2001, pp. 5402
11. Chan, LH; Altman, EI
    Effect of surface intermixing on the morphology of Sb-terminated Ge(100) surfaces - art. no. 195309
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    L.H. Chan e E.I. Altman, "Effect of surface intermixing on the morphology of Sb-terminated Ge(100) surfaces - art. no. 195309", PHYS REV B, 6319(19), 2001, pp. 5309
12. Okada, H; Fujimoto, Y; Endo, K; Hirose, K; Mori, Y
    Detailed analysis of scanning tunneling microscopy images of the Si(001) reconstructed surface with buckled dimers - art. no. 195324
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    H. Okada et al., "Detailed analysis of scanning tunneling microscopy images of the Si(001) reconstructed surface with buckled dimers - art. no. 195324", PHYS REV B, 6319(19), 2001, pp. 5324
13. Raviswaran, A; Liu, CP; Kim, J; Cahill, DG; Gibson, JM
    Evolution of coherent islands during strained-layer Volmer-Weber growth ofSi on Ge(111) - art. no. 125314
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    A. Raviswaran et al., "Evolution of coherent islands during strained-layer Volmer-Weber growth ofSi on Ge(111) - art. no. 125314", PHYS REV B, 6312(12), 2001, pp. 5314
14. Le Thanh, V
    New insight into the kinetics of Stranski-Krastanow growth of Ge on Si(001)
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    V. Le Thanh, "New insight into the kinetics of Stranski-Krastanow growth of Ge on Si(001)", SURF SCI, 492(3), 2001, pp. 255-269
15. Ferrari, L; Pedio, M; Barrett, N; Gunnella, R; Capozi, M; Ottaviani, C; Perfetti, P
    Photoelectron diffraction study on Ge(100) 3d core level
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16. Bulavenko, SY; Koval, IF; Melnik, PV; Nakhodkin, NG; Zandvliet, HJW
    STM investigation of the initial adsorption stage of Bi on Si(100)-(2 x 1)and Ge(100)-(2 x 1) surfaces
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    S.Y. Bulavenko et al., "STM investigation of the initial adsorption stage of Bi on Si(100)-(2 x 1)and Ge(100)-(2 x 1) surfaces", SURF SCI, 482, 2001, pp. 370-375
17. Nakamura, Y; Kondo, Y; Nakamura, J; Watanabe, S
    STM images apparently corresponding to a stable structure: Considerable fluctuation of a phase boundary of the Si(111)-(root 3 x root 3)-Ag surface -art. no. 156102
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18. Koch, R; Wedler, G; Schulz, JJ; Wassermann, B
    Minute SiGe quantum dots on Si(001) by a kinetic 3D island mode - art. no.136104
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    R. Koch et al., "Minute SiGe quantum dots on Si(001) by a kinetic 3D island mode - art. no.136104", PHYS REV L, 8713(13), 2001, pp. 6104
19. da Silva, AJR; Dalpian, GM; Janotti, A; Fazzio, A
    Two-atom structures of Ge on Si(100): Dimers versus adatom pairs - art. no. 036104
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    A.J.R. da Silva et al., "Two-atom structures of Ge on Si(100): Dimers versus adatom pairs - art. no. 036104", PHYS REV L, 8703(3), 2001, pp. 6104-NIL_101
20. Costantini, G; de Mongeot, EB; Boragno, C; Valbusa, U
    Is ion sputtering always a "Negative Homoepitaxial Deposition"?
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21. Hata, K; Sainoo, Y; Shigekawa, H
    Atomically resolved local variation of the barrier height of the flip-flopmotion of single buckled dimers of Si(100)
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    K. Hata et al., "Atomically resolved local variation of the barrier height of the flip-flopmotion of single buckled dimers of Si(100)", PHYS REV L, 86(14), 2001, pp. 3084-3087
22. Yu, CT; Li, DQ; Pearson, J; Bader, SD
    Self-assembled metallic dots and antidots: Epitaxial Co on Ru(0001)
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    C.T. Yu et al., "Self-assembled metallic dots and antidots: Epitaxial Co on Ru(0001)", APPL PHYS L, 78(9), 2001, pp. 1228-1230
23. Taraci, J; Tolle, J; Kouvetakis, J; McCartney, MR; Smith, DJ; Menendez, J; Santana, MA
    Simple chemical routes to diamond-cubic germanium-tin alloys
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    J. Taraci et al., "Simple chemical routes to diamond-cubic germanium-tin alloys", APPL PHYS L, 78(23), 2001, pp. 3607-3609
24. Kahng, SJ; Ha, YH; Moon, DW; Kuk, Y
    Strained Ge overlayer on a Si(001)-(2X1) surface
    PHYSICAL REVIEW B
    
    S.J. Kahng et al., "Strained Ge overlayer on a Si(001)-(2X1) surface", PHYS REV B, 61(16), 2000, pp. 10827-10831
25. Zandvliet, HJW
    Determination of Ge(001) step free energies
    PHYSICAL REVIEW B
    
    H.J.W. Zandvliet, "Determination of Ge(001) step free energies", PHYS REV B, 61(15), 2000, pp. 9972-9974
26. Koch, R; Wassermann, B; Wedler, G
    On the role of interdiffusion during the growth of Ge on Si(001) and Si(111)
    DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    
    R. Koch et al., "On the role of interdiffusion during the growth of Ge on Si(001) and Si(111)", DEFECT DIFF, 183-1, 2000, pp. 95-102
27. Pchelyakov, OP; Bolkhovityanov, YB; Sokolov, LV; Nikiforov, AI; Voigtlander, B
    Molecular beam epitaxy of nanostructures based on silicon and germanium
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
    
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28. Chretien, O; Stoica, T; Dentel, D; Mateeva, E; Vescan, L
    Influence of the mesa size on Ge island electroluminescence properties
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    
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29. Fujino, T; Katayama, M; Yamazaki, Y; Inoue, S; Ryu, JT; Oura, K
    Ion scattering and recoiling spectroscopy for real time monitoring of surface processes in a gas phase atmosphere
    SURFACE REVIEW AND LETTERS
    
    T. Fujino et al., "Ion scattering and recoiling spectroscopy for real time monitoring of surface processes in a gas phase atmosphere", SURF REV L, 7(5-6), 2000, pp. 657-659
30. Renaud, G
    X-ray diffraction for surfaces and buried interfaces
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31. Castrucci, P; Gunnella, R; Pinto, N; Bernardini, R; De Crescenzi, M; Sacchi, M
    Near edge X-ray absorption and X-ray photoelectron diffraction studies of the structural environment of Ge-Si systems
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    P. Castrucci et al., "Near edge X-ray absorption and X-ray photoelectron diffraction studies of the structural environment of Ge-Si systems", SURF REV L, 7(3), 2000, pp. 307-331
32. Nakajima, K; Konishi, A; Kimura, K
    Intermixing at Ge/Si(001) interfaces studied by high-resolution RBS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
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33. Power, JR; Hinrichs, K; Peters, S; Haberland, K; Esser, N; Richter, W
    Sb-mediated Ge growth on singular and vicinal Si(001) surfaces: A surface optical characterization study
    PHYSICAL REVIEW B
    
    J.R. Power et al., "Sb-mediated Ge growth on singular and vicinal Si(001) surfaces: A surface optical characterization study", PHYS REV B, 62(11), 2000, pp. 7378-7386
34. Sakata, O; Lyman, PF; Tinkham, BP; Walko, DA; Marasco, DL; Lee, TL; Bedzyk, MJ
    X-ray scattering study of the Ge(001): Te(1X1) surface structure
    PHYSICAL REVIEW B
    
    O. Sakata et al., "X-ray scattering study of the Ge(001): Te(1X1) surface structure", PHYS REV B, 61(24), 2000, pp. 16692-16696
35. Williams, RS; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA
    Thermodynamics of the size and shape of nanocrystals: Epitaxial Ge on Si(001)
    ANNUAL REVIEW OF PHYSICAL CHEMISTRY
    
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36. Sumitomo, K; Shiraishi, K; Kobayashi, Y; Ito, T; Ogino, T
    Surface segregation and interdiffusion of Ge on Si(001) studied by medium-energy ion scattering
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37. Tegenkamp, C; Ernst, W; Eichmann, M; Pfnur, H
    Stepped NaCl films grown epitaxially on Si-precovered vicinal Ge(100)
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38. Nitta, Y; Shibata, M; Fujita, K; Ichikawa, M
    Nanometer-scale Ge selective growth on Si(001) using ultrathin SiO2 film
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39. Kim, JH; Weiss, AH
    The effect of adsorbed atomic hydrogen on the growth of ultrathin silicon films on Ge(100) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)
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40. Goldfarb, I; Briggs, GAD
    Self-assembled metal-semiconductor compound nanocrystals on Group IV semiconductor surfaces
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41. Yang, HQ; Zhu, CX; Xue, ZQ; Pang, SJ
    Atomic structures of kinks at double-layer steps on Si(100) surfaces
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42. Ohtake, A; Ozeki, M; Nakamura, J
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43. Uberuaga, BP; Leskovar, M; Smith, AP; Jonsson, H; Olmstead, M
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44. Shimokawa, S; Namiki, A; Gamo, MN; Ando, T
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45. Rodrigues, W; Sakata, O; Lee, TL; Walko, DA; Marasco, DL; Bedzyk, MJ
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46. Kahng, SJ; Ha, YH; Moon, DW; Kuk, Y
    Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant
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47. Smilauer, P; Rost, M; Krug, J
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    PHYSICAL REVIEW E
    
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48. Drotar, JT; Zhao, YP; Lu, TM; Wang, GC
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49. Nelen, LM; Fuller, K; Greenlief, CM
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50. Falkenberg, G; Johnson, RL
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51. Bunk, O; Falkenberg, G; Zeysing, JH; Lottermoser, L; Johnson, RL; Nielsen, M; Berg-Rasmussen, F; Feidenhans'l, R
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52. Murty, MVR; Curcic, T; Judy, A; Cooper, BH; Woll, AR; Brock, JD; Kycia, S; Headrick, RL
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53. Savage, DE; Liu, F; Zielasek, V; Lagally, MG
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54. Kawamura, T; Natori, T
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55. Pinto, N; Tombolini, F; Murri, R; De Crescenzi, M; Casalboni, M; Barucca, G; Majni, G
    Photoluminescence investigation of short period silicon-germanium heterostructures grown using molecular beam epitaxy
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56. Ahn, JR; Kim, CY; Chung, JW
    Ge-induced surface reconstructions on the 4 degrees vicinal Si(100) surface
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57. Murty, MVR; Cooper, BH
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58. Li, L; Han, BK; Fu, Q; Hicks, RF
    Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction
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59. Sato, T; Iwatsuki, M; Tachihara, H
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60. Goldfarb, I; Briggs, GAD
    The effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-xSi(0 0 1) gas-source growth
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61. Yang, C; Kang, HC
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62. Taylor, N; Kim, H; Spila, T; Eades, JA; Glass, G; Desjardins, P; Greene, JE
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63. Williams, RS; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA
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64. Kurokawa, S; Yamashita, H; Yoshikawa, J; Sakai, A
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65. Hata, K; Kimura, T; Sainoo, Y; Miyake, K; Morita, R; Yamashita, M; Shigekawa, H
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66. LIU F; LAGALLY MG
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67. FUKUDA T; OGINO T
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68. NIELSEN M; FEIDENHANSL R; RASMUSSEN FB; BAKER J; FALKENBERG G; LOTTERMOSER L; JOHNSON RL; STEINFORT AJ; SCHOLTE PML
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69. DECRESCENZI M; GUNNELLA R; CASTRUCCI P; DAVOLI I
    LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING
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70. Lee, SM; Kim, EJ; Lee, YH; Kim, NG
    Ge(Si) ordering on a double-layer, stepped Si(Ge)(001) surface
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71. SUMITOMO K; NISHIOKA T; OGINO T
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    Applied surface science
    
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72. TUTUNCU HM; JENKINS SJ; SRIVASTAVA GP
    A STUDY OF ATOMIC VIBRATIONS ON SI(001)(2X1)-GE
    Applied surface science
    
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73. WHITTLE R; SAIZPARDO R; GARCIAVIDAL FJ; FLORES F
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    Applied surface science
    
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74. MEDEIROSRIBEIRO G; KAMINS TI; OHLBERG DAA; WILLIAMS RS
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    Physical review. B, Condensed matter
    
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75. MEN FK; HSU CR
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    Physical review. B, Condensed matter
    
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76. LAINE AD; DESETA M; CEPEK C; VANDRE S; GOLDONI A; FRANCO N; AVILA J; ASENSIO MC; SANCROTTI M
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    Physical review. B, Condensed matter
    
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77. WHITEAKER KL; ROBINSON IK; VANNOSTRAND JE; CAHILL DG
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    Physical review. B, Condensed matter
    
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78. Lu, ZY; Chiarotti, GL; Scandolo, S; Tosatti, E
    Atomic and electronic structure of ideal and reconstructed alpha-Sn (100) surfaces
    PHYSICAL REVIEW B-CONDENSED MATTER
    
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79. DEPADOVA P; FELICI R; LARCIPRETE R; FERRARI L; ORTEGA L; FORMOSO V; COMIN F; BALERNA A
    COMBINED HIGH-RESOLUTION X-RAY-DIFFRACTION AND EXAFS STUDIES OF SI(1-X)GE-X HETEROSTRUCTURES
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80. MURTY MVR; COWLES B; COOPER BH
    SURFACE SMOOTHING DURING SPUTTERING - MOBILE VACANCIES VERSUS ADATOM DETACHMENT AND DIFFUSION
    Surface science
    
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81. CHAN ACT; WANG GC
    ROUGHNESS EVOLUTION OF SI(111) BY LOW-ENERGY ION-BOMBARDMENT
    Surface science
    
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82. TAKEUCHI N
    FIRST-PRINCIPLES CALCULATIONS OF LOW-COVERAGE PHASES OF PB ON THE (100) SURFACE OF GE
    Surface science
    
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83. LAINE AD; DESETA M; CEPEK C; VANDRE S; GOLDONI A; FRANCO N; AVILA J; ASENSIO MC; SANCROTTI M
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    Surface science
    
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84. TOCHIHARA H; NAKAMURA Y; KAWAI H; NAKAYAMA M; SATO T; SUEYOSHI T; AMAKUSA T; IWATSUKI M
    LITTLE INFLUENCE OF KINKS ON THE FORMATION OF C(4X2) DOMAINS IN A SI(001) SURFACE AT LOW-TEMPERATURE
    Journal of the Physical Society of Japan
    
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85. RUSPONI S; COSTANTINI G; BORAGNO C; VALBUSA U
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    Physical review letters
    
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86. CHOI JW; DOWBEN PA; PEBLEY S; BUNE AV; DUCHARME S; FRIDKIN VM; PALTO SP; PETUKHOVA N
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87. MURTY MVR; CURCIC T; JUDY A; COOPER BH; WOLL AR; BROCK JD; KYCIA S; HEADRICK RL
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    Physical review letters
    
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88. Pinto, N; Tombolini, F; Murri, R; De Crescenzi, M; Casalboni, M; Barucca, G; Majni, G
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89. Hu, JJ; Tanaka, N
    Direct atomic observation of Ge/(001)Si interfaces by image processing methods in high-resolution electron microscopy
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90. CAKMAK M; SRIVASTAVA GP
    ADSORPTION AND DESORPTION OF S ON AND OFF SI(001) STUDIED BY AB-INITIO DENSITY-FUNCTIONAL THEORY
    Journal of applied physics
    
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91. GOTHELID M; LELAY G; WIGREN C; BJORKQVIST M; RAD M; KARLSSON UO
    ETCHING AND A DISORDERED OVERLAYER ON THE GE(100)-S SURFACE
    Applied surface science
    
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92. TUTUNCU HM; JENKINS SJ; SRIVASTAVA GP
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    Physical review. B, Condensed matter
    
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93. WORMEESTER H; WENTINK DJ; VANSILFHOUT A
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    Physical review. B, Condensed matter
    
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94. FUKUDA T; OGINO T
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    Physical review. B, Condensed matter
    
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95. GAI Z; ZHAO RG; JI H; LI XW; YANG WS
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    Physical review. B, Condensed matter
    
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96. YOKOYAMA T; TAKAYANAGI K
    DIMER BUCKLING INDUCED BY SINGLE-DIMER VACANCIES ON THE SI(001) SURFACE NEAR T-C
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97. TAKEUCHI N
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98. UKRAINTSEV VA; DOHNALEK Z; YATES JT
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    Surface science
    
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99. LIU F; LAGALLY MG
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    Surface science
    
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100. IKEDA A; SUMITOMO K; NISHIOKA T; YASUE T; KOSHIKAWA T; KIDO Y
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     Surface science
     
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