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La ricerca find articoli where soggetti phrase all words 'GAS-SOURCE-MBE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 77 riferimenti
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    1. Rauscher, H
      The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures

      SURFACE SCIENCE REPORTS
    2. Tsukidate, Y; Suemitsu, M
      Infrared study of SiH4-Adsorbed Si(100) surfaces: Observation and mode assignment of new peaks

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    3. Matsuda, S; Asahi, H; Mori, J; Watanabe, D; Asami, K
      1.3-1.6-mu m-wavelength quantum dots self-formed in GaAs/InAs short-periodsuperlattices grown on InP (411)A substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    4. Treusch, HG; Ovtchinnikov, A; He, X; Kanskar, M; Mott, J; Yang, S
      High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    5. Asahi, H; Tampo, H; Hiroki, H; Asami, K; Gonda, S
      Gas source MBE growth of GaN-related novel semiconductors

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    6. Gonda, S; Asahi, H; Mori, J; Watanabe, D; Matsuda, S; Noh, JH; Fudeta, M; Asami, K; Seki, S; Matsui, Y; Tagawa, S
      Structural and optical characterization of self-formed GaP/InP quantum dots

      JOURNAL OF ELECTRONIC MATERIALS
    7. Weyers, M; Bhattacharya, A; Bugge, F; Knauer, A
      Epitaxy of high-power diode laser structures

      HIGH-POWER DIODE LASERS: FUNDAMENTALS, TECHNOLOGY, APPLICATIONS
    8. Mori, J; Asahi, H; Fudeta, M; Noh, JH; Watanabe, D; Matsuda, S; Asami, K; Narukawa, Y; Kawakami, Y; Fujita, S; Kaneko, T; Gonda, S
      Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures

      APPLIED SURFACE SCIENCE
    9. Hirose, F
      Incorporation mechanism of dopant phosphorus in the Si growth using Si2H6 and PH3

      JOURNAL OF CRYSTAL GROWTH
    10. Ouchi, K; Mishima, T
      Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE

      JOURNAL OF CRYSTAL GROWTH
    11. Tok, ES; Woods, NJ; Zhang, J
      RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

      JOURNAL OF CRYSTAL GROWTH
    12. Hiroki, M; Asahi, H; Tampo, H; Asami, K; Gonda, S
      Improved properties of polycrystalline GaN grown on silica glass substrate

      JOURNAL OF CRYSTAL GROWTH
    13. Ferro, G; Okumura, H; Yoshida, S
      Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecularbeam Epitaxy

      JOURNAL OF CRYSTAL GROWTH
    14. Kizuki, H; Kouji, Y; Hayafuji, N; Kajikawa, Y
      Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers

      JOURNAL OF CRYSTAL GROWTH
    15. Zhou, YK; Asahi, H; Ayabe, A; Takenaka, K; Fushida, M; Asami, K; Gonda, S
      Gas-source MBE growth of Tl-based III-V semiconductors and their Raman scattering characterization

      JOURNAL OF CRYSTAL GROWTH
    16. Batinica, GJ; Crowell, JE
      Photoinduced reaction of digermane with Si(111)

      JOURNAL OF PHYSICAL CHEMISTRY A
    17. Masuda, H; Ouchi, K; Terano, A; Suzuki, H; Watanabe, K; Oka, T; Matsubara, H; Tanoue, T
      High performance InP/InGaAs HBTs for 40-Gb/s optical transmission ICs

      IEICE TRANSACTIONS ON ELECTRONICS
    18. Liu, JL; Cai, SJ; Jin, GL; Tang, YS; Wang, KL
      Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

      SUPERLATTICES AND MICROSTRUCTURES
    19. Berbezier, I; Gallas, B; Fernandez, J; Joyce, B
      Self-limiting segregation and incorporation during boron doping of Si and SiGe

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    20. Asahi, H; Iwata, K; Tampo, H; Kuroiwa, R; Hiroki, M; Asami, K; Nakamura, S; Gonda, S
      Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE

      JOURNAL OF CRYSTAL GROWTH
    21. Sakata, H; Nagao, Y; Matsushima, Y
      Delta p(+)-doped InGaAs grown by gas source MBE for novel optoelectronic memory

      JOURNAL OF CRYSTAL GROWTH
    22. Asahi, H; Koh, H; Takenaka, K; Asami, K; Oe, K; Gonda, S
      Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications

      JOURNAL OF CRYSTAL GROWTH
    23. Liu, JL; Cai, SJ; Jin, GL; Thomas, SG; Wang, KL
      Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)

      JOURNAL OF CRYSTAL GROWTH
    24. Hirose, F; Sakamoto, H
      Prediction of concentration profile for P doping in Si gas-source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    25. Liu, JP; Huang, DD; Li, JP; Lin, YX; Sun, DZ; Kong, MY
      Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGexgrowth by disilane and solid-Ge molecular beam epitaxy

      JOURNAL OF APPLIED PHYSICS
    26. Noh, JH; Asahi, H; Fudeta, M; Watanabe, D; Mori, J; Gonda, S
      Growth temperature dependence of self-formation process of quantum dot structures in GaP/InP short-period superlattices grown on GaAs (311)A substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    27. Takenaka, K; Asahi, H; Koh, H; Asami, K; Gonda, S; Oe, K
      Growth of TlInGaAs on InP by gas-source molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    28. Fudeta, M; Asahi, H; Asami, K; Narukawa, Y; Kawakami, Y; Noh, JH; Mori, J; Watanabe, D; Fujita, S; Gonda, S
      Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    29. Kim, SJ; Asahi, H; Asami, K; Fudeta, M; Gonda, S
      Straight quantum wires self-formed by growing GaP/InP short-period superlattices on GaAs(011) substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    30. Kim, SJ; Asahi, H; Asami, K; Gonda, S
      CuAu-type ordering self-formed by growing GaP/InP short-period superlattices on GaAs (011) substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    31. Nishimori, T; Utsumi, J; Sakamoto, H; Takakuwa, Y; Kono, S
      Growth of n-type diamond with high conductivity by gas-source molecular beam epitaxy and its application

      DIAMOND FILMS AND TECHNOLOGY
    32. YOSHIGOE A; HIRANO S; URISU T
      SURFACE HYDROGEN AND GROWTH MECHANISMS OF SYNCHROTRON RADIATION-ASSISTED SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXY USING DISILANE

      Applied organometallic chemistry
    33. HIROSE F; SAKAMOTO H
      MODELING GROWTH IN SIGE GAS-SOURCE MOLECULAR-BEAM EPITAXY USING SI2H6AND GEH4

      Microelectronic engineering
    34. Dmitriev, VA; Spencer, MG
      SiC fabrication technology: Growth and doping

      SIC MATERIALS AND DEVICES
    35. YASUDA Y; MATSUYAMA T; SATO K; KONDO M; IKEDA H; ZAIMA S
      EFFECTS OF ATOMIC-HYDROGEN ON GROWTH-BEHAVIOR OF SI FILMS BY SI2H6-SOURCE MOLECULAR-BEAM EPITAXY

      Thin solid films
    36. LIU JP; KONG MY; LI JP; LIU XF; HUANG DD; SUN DZ
      LOW-TEMPERATURE GROWTH-PROPERTIES OF SI1-XGEX BY DISILANE AND SOLID-GE MOLECULAR-BEAM EPITAXY

      Journal of crystal growth
    37. IWATA K; ASAHI H; ASAMI K; ISHIDA A; KUROIWA R; TAMPO H; GONDA S; CHICHIBU S
      PROMISING CHARACTERISTICS OF GAN LAYERS GROWN ON AMORPHOUS SILICA SUBSTRATES BY GAS-SOURCE MBE

      Journal of crystal growth
    38. IWATA K; ASAHI H; ASAMI K; KUROIWA R; GONDA S
      STRONG PHOTOLUMINESCENCE EMISSION FROM GAN GROWN ON AMORPHOUS SILICA SUBSTRATES BY GAS-SOURCE MBE

      Journal of crystal growth
    39. KOH H; ASAHI H; FUSHIDA M; YAMAMOTO K; TAKENAKA K; ASAMI K; GONDA S; OE K
      PHOTOCONDUCTANCE MEASUREMENT ON TLINGAP GROWN BY GAS-SOURCE MBE

      Journal of crystal growth
    40. NOH JH; ASAHI H; KIM SJ; GONDA S
      SCANNING-TUNNELING-MICROSCOPY STUDY ON SELF-FORMATION PROCESS OF QUANTUM-DOT STRUCTURES BY THE GROWTH OF GAP INP SHORT-PERIOD SUPERLATTICESON GAAS(311)A SUBSTRATE/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. KERN RS; JARRENDAHL K; TANAKA S; DAVIS RF
      HOMOEPITAXIAL SIC GROWTH BY MOLECULAR-BEAM EPITAXY

      Physica status solidi. b, Basic research
    42. SENGUPTA DK; JACKSON SL; CURTIS AP; FANG W; MALIN JI; HORTON TU; KUO HC; MOY A; MILLER J; HSIEH KC; CHENG KY; CHEN H; ADESIDA I; CHUANG SL; FENG M; STILLMAN GE; WU W; TUCKER J; CHANG YC; LI L; LIU HC
      GROWTH AND CHARACTERIZATION OF INGAAS INP P-QUANTUM-WELL INFRARED PHOTODETECTORS WITH EXTREMELY THIN QUANTUM-WELLS/

      Journal of electronic materials
    43. SAKAMOTO H; TAKAKUWA Y; ENTA Y; HORIE T; HORI T; YAMAGUCHI T; MIYAMOTO N; KATO H
      IN-SITU MONITORING OF GAS-SOURCE MOLECULAR-BEAM EPITAXY OF SILICON WITH DISILANE BY ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY

      Applied surface science
    44. LIU JP; LIU XF; LI JP; SUN DZ; KONG MY
      GE COMPOSITION SATURATION BEHAVIOR DURING LOW-TEMPERATURE SI1-XGEX GROWTH BY DISILANE AND SOLID GE MOLECULAR-BEAM EPITAXY

      Journal of crystal growth
    45. HIROSE F
      MODELING GROWTH IN SI GAS-SOURCE MOLECULAR-BEAM EPITAXY USING SI2H6

      Journal of crystal growth
    46. KIM SJ; ASAHI H; TAKEMOTO M; ASAMI K; NOH JH; GONDA S
      SELF-ORGANIZED QUANTUM-DOT STRUCTURES IN STRAINED (GAP)(N)(INP)(M) SHORT-PERIOD SUPERLATTICES GROWN ON GAAS(N11) BY GAS-SOURCE MBE

      Journal of crystal growth
    47. ASAHI H; FUSHIDA M; YAMAMOTO K; IWATA K; KOH H; ASAMI K; GONDA S; OE K
      NEW SEMICONDUCTORS TLINGAP AND THEIR GAS-SOURCE MBE GROWTH

      Journal of crystal growth
    48. SAKATA H; NAGAO Y; MATSUSHIMA Y
      SYMMETRICAL TRIANGULAR-BARRIER OPTOELECTRONIC SWITCH (S-TOPS) BY GAS-SOURCE MBE

      Journal of crystal growth
    49. IWATA K; ASAHI H; ASAMI K; GONDA S
      GAS-SOURCE MBE GROWTH OF GAN RICH SIDE OF GAN1-XPX USING ION-REMOVED ECR RADICAL CELL

      Journal of crystal growth
    50. CHENG KY
      MOLECULAR-BEAM EPITAXY TECHNOLOGY OF III-V COMPOUND SEMICONDUCTORS FOR OPTOELECTRONIC APPLICATIONS

      Proceedings of the IEEE
    51. NOH JH; ASAHI H; KIM SJ; GONDA S
      SCANNING TUNNELING MICROSCOPY SPECTROSCOPY STUDY OF SELF-ORGANIZED QUANTUM-DOT STRUCTURES FORMED IN GAP/INP SHORT-PERIOD SUPERLATTICES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    52. OUCHI K; MISHIMA T; MOCHIZUKI K; OKA T; TANOUE T
      FULLY STRAINED HEAVILY CARBON-DOPED GAAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING CARBONTETRABROMIDE AND ITS APPLICATION TO INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    53. OKADA M; KONDO M; IKEDA H; ZAIMA S; YASUDA Y
      HYDROGEN EFFECTS ON SI1-XGEX SI HETEROEPITAXIAL GROWTH BY SI2H6-SOURCE AND GEH4-SOURCE MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. FUSHIDA M; ASAHI H; YAMAMOTO K; KOH H; ASAMI K; GONDA S; OE K
      TLGAP LAYERS GROWN ON GAAS SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    55. BOWLER DR; GORINGE CM
      AN AB-INITIO STUDY OF SIH2 FRAGMENTS ON THE SI(001) SURFACE

      Surface science
    56. KIM SJ; ASAHI H; TAKEMOTO M; ASAMI K; TAKEUCHI M; GONDA S
      SELF-ORGANIZED DOT COLUMNAR STRUCTURES AND QUASI-PERFECT CUPT-TYPE ORDERING IN (GAP)(N)(INP)(N) SUPERLATTICES GROWN ON GAAS (N-11) SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    57. NOH JH; ASAHI H; KIM SJ; TAKEMOTO M; GONDA S
      SCANNING-TUNNELING-MICROSCOPY SCANNING TUNNELING SPECTROSCOPY OBSERVATION OF III-V COMPOUND SEMICONDUCTOR NANOSTRUCTURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    58. KIM JH; ASAHI H; DOI K; ASAMI K; GONDA S
      PHOTOLUMINESCENCE WAVELENGTH DEPENDENCE ON LAYER STRUCTURE OF GAP ALPMODULATED SUPERLATTICES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    59. ASAHI H; YAMAMOTO K; IWATA K; GONDA S; OE K
      NEW III-V-COMPOUND SEMICONDUCTORS TLINGAP FOR 0.9-MU-M TO OVER 10-MU-M WAVELENGTH RANGE LASER-DIODES AND THEIR FIRST SUCCESSFUL GROWTH

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    60. DOI K; ASAHI H; KIM JH; ASAMI K; GONDA S
      SUBSTRATE ORIENTATION DEPENDENCE OF OPTICAL-PROPERTIES OF GAP ALP SHORT-PERIOD SUPERLATTICES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    61. ABERNATHY CR
      COMPOUND SEMICONDUCTOR GROWTH BY METALLORGANIC MOLECULAR-BEAM EPITAXY(MOMBE)

      Materials science & engineering. R, Reports
    62. CHALKER PR; JOHNSTON C; ROMANI S; AYRES CF; BUCKLEYGOLDER IM; KROTZ G; ANGERER H; MULLER G; VEPREK S; KUNSTMANN T; LEGNER W; SMITH LM; LEESE AB; JONES AC; RUSHWORTH SA
      FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS

      DIAMOND AND RELATED MATERIALS
    63. MA Y; LORDI S; EADES JA
      SYMMETRY ANALYSIS OF THE RHEED PATTERNS FROM THE SI(001)-2X1 SURFACES

      Ultramicroscopy
    64. TWEET DJ; TATSUMI T; MIYANAGA K; TERASHIMA K
      STRUCTURAL-ANALYSIS OF IMPERFECT GESI SUPERLATTICES GROWN ON GE(001) SUBSTRATES

      Journal of applied physics
    65. ISHIDA M; TAYANAKA H; YANAGIYA S; NAKAMURA T
      DIFFERENCE OF SI SELECTIVE GROWTH ON AL2O3 AND SIO2 SUBSTRATES BY ELECTRON-BEAM IRRADIATION METHOD

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    66. YOSHIGOE A; NAGASONO M; MASE K; URISU T
      SYNCHROTRON-RADIATION IRRADIATION EFFECTS FOR SIHN ON SI(100) SURFACEIN THE SYNCHROTRON-RADIATION STIMULATED SI GAS-SOURCE MOLECULAR-BEAM EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. GOMYO A; SUMINO M; HINO I; SUZUKI T
      OBSERVATION OF A NEW CUPT-TYPE ORDERED-PHASE WITH ORIENTATION IN THE [111]A DIRECTION IN AL0.5IN0.5P ALLOY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    68. NISHIMORI T; SAKAMOTO H; TAKAKUWA Y; KONO S
      DIAMOND EPITAXIAL-GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH PURE METHANE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    69. JORDAN AS; ROBERTSON A
      THERMODYNAMIC ANALYSIS OF ASH3 AND PH3 DECOMPOSITION INCLUDING SUBHYDRIDES

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    70. WANG YJ; BRONIKOWSKI MJ; HAMERS RJ
      AN ATOMICALLY RESOLVED SCANNING-TUNNELING-MICROSCOPY STUDY OF THE THERMAL-DECOMPOSITION OF DISILANE ON SI(001)

      Surface science
    71. TWEET DJ; TATSUMI T; HIRAYAMA H; MIYANAGA K; TERASHIMA K
      FACTORS DETERMINING THE COMPOSITION OF STRAINED GESI LAYERS GROWN WITH DISILANE AND GERMANE

      Applied physics letters
    72. YANG BX; HASEGAWA H
      EFFECTS OF PHOSPHORUS PRESSURE ON GROWTH-RATE AND LAYER QUALITY OF INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. NANIWAE K; SUGOU S; ANAN T
      EFFECT OF STRAIN COMPENSATION ON CRYSTALLINE QUALITY FOR INGAAS INALPSTRAINED MULTIPLE-QUANTUM-WELL STRUCTURES ON INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    74. DAVIS RF
      THIN-FILMS AND DEVICES OF DIAMOND, SILICON-CARBIDE AND GALLIUM NITRIDE

      Physica. B, Condensed matter
    75. MARACAS GN; SHIRALAGI K; RAMAMURTI R; CARPENTER RW
      A COMPARISON OF AS AND P-BASED SEMICONDUCTORS GROWN AT LOW-TEMPERATURES BY MBE AND GSMBE

      Journal of electronic materials
    76. KURODA N; SUGOU S; SASAKI T; KITAMURA M
      SELECTIVE GROWTH OF INGAAS INP LAYERS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH ATOMIC-HYDROGEN IRRADIATION/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    77. NAYAK DK; USAMI N; SUNAMURA H; FUKATSU S; SHIRAKI Y
      BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


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Documento generato il 04/06/20 alle ore 23:47:54