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La ricerca find articoli where soggetti phrase all words 'GAN' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 3590 riferimenti
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    1. STEURBAUT Etienne; SZTRAKOS Karoly
      Le Paleogene de la coupe de la route Gan-Rebenaco(Aquitaine,France):stratigraphie integree,Foraminiferes et nannofossiles calcaires

      Revue de micropaléontologie
    2. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Han, P; Wang, XH; Wang, D
      Statistical investigation on morphology development of gallium nitride in initial growth stage

      JOURNAL OF CRYSTAL GROWTH
    3. Lu, DC; Duan, SK
      Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

      JOURNAL OF CRYSTAL GROWTH
    4. Parala, H; Devi, A; Wohlfart, A; Winter, M; Fischer, RA
      An efficient chemical solution deposition method for epitaxial gallium nitride layers using a single-molecule precursor

      ADVANCED FUNCTIONAL MATERIALS
    5. Furuya, Y; Kawakita, T; Nomoto, K
      Immunomodulating effect of a traditional Japanese medicine, Hachimi-jio-gan (Ba-Wei-Di-Huang-Wan), on Th1 predominance in autoimmune MRL/MP-lpr/lpr mice

      INTERNATIONAL IMMUNOPHARMACOLOGY
    6. Lee, JW; Webb, KJ
      Broadband GaNHEMT push-pull microwave power amplifier

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    7. Kandalam, AK; Blanco, MA; Pandey, R
      Theoretical study of structural and vibrational properties of Al3N3, Ga3N3, and In3N3

      JOURNAL OF PHYSICAL CHEMISTRY B
    8. Aoyagi, Y; Tanaka, S; Hirayama, H; Takeuchi, M
      Quantum dot formation and crystal growth using an atomic nano-mask

      PHYSICA E
    9. Agrawal, BK; Agrawal, S; Srivastava, R; Srivastava, P
      Valence band offsets and interface states of polar GaN/SiC (001) 2 x 2 superlattices

      PHYSICA E
    10. Andreeva, AD; O'Reilly, EP
      Theoretical analysis of the electronic structure of truncated-pyramidal GaN/AlN quantum dots

      PHYSICA E
    11. Kuwabara, S; Ishii, K; Haneda, S; Kondo, T; Munekata, H
      Preparation of wurtzite GaN-based magnetic alloy semiconductors by molecular beam epitaxy

      PHYSICA E
    12. Mohammad, SN
      Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    13. Mohammad, SN; Fan, ZF; Botchkarev, AE; Kim, W; Aktas, O; Morkoc, H; Shiwei, F; Jones, KA; Derenge, MA
      Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    14. Tabbal, M; Merel, P; Chaker, M; Pepin, H
      Pulsed laser deposition of c-axis oriented aluminum nitride thin films on silicon

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    15. Guitton, C; Perez, JM; Dorchies, P
      Scanning electron microscopy of larval instars and imago of Oestrus caucasicus (Grunin, 1948) (Diptera : Oestridae)

      PARASITE-JOURNAL DE LA SOCIETE FRANCAISE DE PARASITOLOGIE
    16. Atakan, B; Liu, ZJ
      Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor

      JOURNAL DE PHYSIQUE IV
    17. Hsu, CH; Ip, KP; Johnson, JW; Chu, SNG; Kryliouk, O; Pearton, SJ; Li, L; Chai, BHT; Anderson, TJ; Ren, F
      Wet chemical etching of LiGaO2 and LiAlO2

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    18. Park, JS; Im, YH; Choi, RJ; Hahn, YB; Choi, CS; Lee, SH; Lee, JK
      Plasma chemistries for dry etching of SrBi2Ta2O9 thin films

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    19. Kim, H; Park, NM; Jang, JS; Park, SJ; Hwang, H
      Effects of N2O plasma surface treatment on the electrical and ohmic contact properties of n-type GaN

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    20. Im, YH; Kang, HG; Han, BS; Hahn, YB
      High density plasma etching of Y-Ba-Cu-O superconductors

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    21. Shi, Y; Liu, B; Liu, LH; Edgar, JH; Payzant, EA; Hayes, JM; Kuball, M
      New technique for sublimation growth of AlN single crystals

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    22. Reeber, RR; Wang, K
      High temperature elastic constant prediction of some group III-nitrides

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    23. Caldwell, ML; Van Patten, PG; Kordesch, ME; Richardson, HH
      Visible luminescent activation of amorphous AlN : Eu thin-film phosphors with oxygen

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    24. Shahedipour, F; Wessels, BW
      The origin of the 2.8 eV blue emission in p-type GaN : Mg : A time-resolved photoluminescence investigation

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    25. Chen, HJ; Feenstra, RM; Northrup, J; Neugebauer, J; Greve, DW
      Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    26. Denninger, G; Baldenhofer, K; Gessler, R; Binet, L; Gourier, D
      Site-selective electron nuclear double resonance in the exchange-narrowed regime of the ESR in conducting solids

      JOURNAL OF MAGNETIC RESONANCE
    27. Kneissl, M; Wong, WS; Treat, DW; Teepe, M; Miyashita, N; Johnson, NM
      Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    28. Osinski, M; Smagley, VA; Smolyakov, GA; Eliseev, PG
      Design of InGaN-GaN-AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    29. Skriniarova, J; Bochem, P; Fox, A; Kordos, P
      Photoenhanced wet etching of gallium nitride in KOH-based solutions

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    30. Lin, YJ; Lee, CT
      Surface analysis of (NH4)(2)S-x-treated InGaN using x-ray photoelectron spectroscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    31. Brillson, LJ
      Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    32. Chung, MS; Lin, WT; Gong, JR
      Formation of Hf ohmic contacts by surface treatment of n-GaN in KOH solutions

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    33. Visconti, P; Reshchikov, MA; Jones, KM; Wang, DF; Cingolani, R; Morkoc, H; Molnar, RJ; Smith, DJ
      Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    34. Starikov, D; Boney, C; Berishev, I; Hernandez, IC; Bensaoula, A
      Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    35. Pei, CW; Turk, B; Heroux, JB; Wang, WI
      GaN grown by molecular beam epitaxy with antimony as surfactant

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    36. Lee, CD; Feenstra, RM; Rosa, AL; Neugebauer, J; Northrup, JE
      Silicon on GaN(0001) and (000(1)over-bar) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    37. Schaadt, DM; Miller, EJ; Yu, ET; Redwing, JM
      Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    38. Hashizume, T; Ootomo, S; Oyama, S; Konishi, M; Hasegawa, H
      Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    39. Kim, DW; Bae, JC; Kim, WJ; Baik, HK; Lee, SM
      Electrical properties of Pd-based ohmic contact to p-GaN

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    40. Im, YH; Hahn, YB; Pearton, SJ
      Level set approach to simulation of feature profile evolution in a high-density plasma-etching system

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    41. Franz, G; Hosler, W; Treichler, R
      Sidewall passivation of GaAs in BCl3-containing atmospheres

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    42. Lim, SH; Shindo, D; Kang, HB; Nakamura, K
      Defect structure of epitaxial ZnO films on (0001) sapphire studied by transmission electron microscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    43. Ob''edkov, AM; Domrachev, GA; Korovina, EY; Razov, EN
      Emission properties of the plasma in mixtures of helium with diethylzinc and hydrogen selenide vapors

      RUSSIAN JOURNAL OF GENERAL CHEMISTRY
    44. Ratnikov, VV; Mamutin, VV; Vekshin, VA; Ivanov, SV
      X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses

      PHYSICS OF THE SOLID STATE
    45. Grinyaev, SN; Razzhuvalov, AN
      Resonant electron tunneling in GaN/Ga1-xAlxN(0001) strained structures with spontaneous polarization and piezoeffect

      PHYSICS OF THE SOLID STATE
    46. Kukushkin, SA; Bessolov, VN; Osipov, AV; Luk'yanov, AV
      Nucleation of III nitride semiconductors in heteroepitaxy

      PHYSICS OF THE SOLID STATE
    47. Kudryashov, VE; Mamakin, SS; Turkin, AN; Yunovich, AE; Kovalev, AN; Manyakhin, FI
      Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence

      SEMICONDUCTORS
    48. Blaut-Blachev, AN
      Polycrystalline films of gallium nitride grown by magnetron sputtering

      SEMICONDUCTORS
    49. Blank, TV; Goldberg, YA; Kalinina, EV; Konstantinov, OV; Nikolaev, AE; Fomin, AV; Cherenkov, AE
      Mechanism of the current flow in Pd-(heavily doped p-AlxGa1-xN) ohmic contact

      SEMICONDUCTORS
    50. Chen, CH; Chang, SJ; Su, YK; Chi, GC; Chi, JY; Chang, CA; Sheu, JK; Chen, JF
      GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

      IEEE PHOTONICS TECHNOLOGY LETTERS
    51. Lai, WC; Chang, SJ; Yokoyam, M; Sheu, JK; Chen, JF
      InGaN-AlInGaN multiquantum-well LEDs

      IEEE PHOTONICS TECHNOLOGY LETTERS
    52. Sheu, JK; Chi, GC; Jou, MJ
      Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer

      IEEE PHOTONICS TECHNOLOGY LETTERS
    53. Rex, NB; Chang, RK; Guido, LJ
      Threshold lowering in GaN micropillar lasers by means of spatially selective optical pumping

      IEEE PHOTONICS TECHNOLOGY LETTERS
    54. Xue, QZ; Xue, QK; Kuwano, S; Nakayama, K; Sakurai, T
      Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)

      CHINESE PHYSICS
    55. Zhang, XY; Li, ZR; Yan, WS; Wang, XG; Wei, SQ; Lu, KQ
      XAFS studies on local structures of nanocrystalline and crystalline GaN

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    56. Zheng, XH; Qu, B; Wang, YT; Dai, ZZ; Yang, H; Liang, JW
      Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) byAPCVD

      SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
    57. Qu, B; Li, SF; Hu, GX; Zheng, XH; Wang, YT; Lin, SM; Yang, H; Liang, JW
      Surface roughness and high density of cubic twins and hexagonal inclusionsin cubic GaN epilayers

      SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
    58. Qu, B; Zheng, XH; Wang, YT; Feng, ZH; Han, JY; Liu, S; Lin, SM; Yang, H; Liang, JW
      Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers

      SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
    59. Zhou, YG; Shen, B; Liu, J; Zhou, HM; Yu, HQ; Zhang, R; Shi, Y; Zheng, YD
      Extraction of polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics

      ACTA PHYSICA SINICA
    60. Zhang, DH; Liu, YY; Zhang, DJ
      The UV photoconductivity of n-type GaN films deposited by MOCVD

      ACTA PHYSICA SINICA
    61. Morkoc, H
      III-Nitride semiconductor growth by MBE: Recent issues

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    62. Jaszek, R
      Carrier scattering by dislocations in semiconductors

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    63. da Silva, AF; Araujo, CM; Sernelius, BE; Persson, C; Ahuja, R; Johansson, B
      Influence of Si doping on optical properties of wurtzite GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    64. As, DJ; Kohler, U
      Carbon - an alternative acceptor for cubic GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    65. Lancefield, D; Eshghi, H
      Temperature-dependent hole transport in GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    66. Pinho, NMC; Torres, VJB; Jones, R; Briddon, PR; Oberg, S
      Mg-H and Be-H complexes in cubic boron nitride

      JOURNAL OF PHYSICS-CONDENSED MATTER
    67. Auret, FD; Goodman, SA; Hayes, M; Legodi, MJ; van Laarhoven, HA; Look, DC
      The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO

      JOURNAL OF PHYSICS-CONDENSED MATTER
    68. Cadoret, R; Trassoudaine, A
      Growth of gallium nitride by HVPE

      JOURNAL OF PHYSICS-CONDENSED MATTER
    69. Koukitu, A; Kumagai, Y
      Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) andmolecular beam epitaxy (MBE)

      JOURNAL OF PHYSICS-CONDENSED MATTER
    70. Amano, H; Akasaki, I
      Novel aspects of the growth of nitrides by MOVPE

      JOURNAL OF PHYSICS-CONDENSED MATTER
    71. Grandjean, N; Damilano, B; Massies, J
      Group-III nitride quantum heterostructures grown by molecular beam epitaxy

      JOURNAL OF PHYSICS-CONDENSED MATTER
    72. Hiramatsu, K
      Epitaxial lateral overgrowth techniques used in group III nitride epitaxy

      JOURNAL OF PHYSICS-CONDENSED MATTER
    73. O'Donnell, KP; Mosselmans, JFW; Martin, RW; Pereira, S; White, ME
      Structural analysis of InGaN epilayers

      JOURNAL OF PHYSICS-CONDENSED MATTER
    74. Monemar, B
      Bound excitons in GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    75. Taliercio, T; Lefebvre, P; Gallart, M; Morel, A
      Optical properties of group-III nitride quantum wells and quantum boxes

      JOURNAL OF PHYSICS-CONDENSED MATTER
    76. Zhang, XB; Taliercio, T; Kolliakos, S; Lefebvre, P
      Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    77. Mukai, T; Nagahama, S; Iwasa, N; Senoh, M; Yamada, T
      Nitride light-emitting diodes

      JOURNAL OF PHYSICS-CONDENSED MATTER
    78. Munoz, E; Monroy, E; Pau, JL; Calle, F; Omnes, F; Gibart, P
      III nitrides and UV detection

      JOURNAL OF PHYSICS-CONDENSED MATTER
    79. Xing, H; Keller, S; Wu, YF; McCarthy, L; Smorchkova, IP; Buttari, D; Coffie, R; Green, DS; Parish, G; Heikman, S; Shen, L; Zhang, N; Xu, JJ; Keller, BP; DenBaars, SP; Mishra, UK
      Gallium nitride based transistors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    80. Starikov, E; Shiktorov, P; Gruzinskis, V; Reggiani, L; Varani, L; Vaissiere, JC; Zhao, JH
      Monte Carlo simulation of terahertz generation in nitrides

      JOURNAL OF PHYSICS-CONDENSED MATTER
    81. Komirenko, SM; Kim, KW; Stroscio, MA; Dutta, M
      Applicability of the Fermi golden rule and the possibility of low-field runaway transport in nitrides

      JOURNAL OF PHYSICS-CONDENSED MATTER
    82. Anderson, DR; Babiker, M; Bennett, CR; Zakhleniuk, NA; Ridley, BK
      Evaluations of the low-field mobility in degenerate GaN/AlN heterojunctions

      JOURNAL OF PHYSICS-CONDENSED MATTER
    83. Rerat, M; Cheng, WD; Pandey, R
      First-principles calculations of nonlinear optical susceptibility of inorganic materials

      JOURNAL OF PHYSICS-CONDENSED MATTER
    84. Rodrigues, SCP; Sipahi, GM; Scolfaro, LMR; Leite, JR
      Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende AlxGa1-xN/GaN superlattices

      JOURNAL OF PHYSICS-CONDENSED MATTER
    85. Li, JY; Qiao, ZY; Chen, XL; Cao, YG; He, M
      Gallium nitride nano-ribbon rings

      JOURNAL OF PHYSICS-CONDENSED MATTER
    86. Dziuba, Z; Gorska, M; Antoszewski, J; Babinski, A; Kozodoy, P; Keller, S; Keller, B; DenBaars, SP; Mishra, UK
      Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    87. Shim, KH; Paek, MC; Lee, BT; Kim, C; Kang, JY
      Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    88. Cao, YG; Chen, XL; Lan, YC; Li, JY; Zhang, Y; Yang, Z; Liang, JK
      Synthesis and Raman characteristics of hexagonal AlxGa1-xN alloy nanocrystalline solids through ammonothermal routes

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    89. Shi, WS; Zheng, YF; Wang, N; Lee, CS; Lee, ST
      A general synthetic route to III-V compound semiconductor nanowires

      ADVANCED MATERIALS
    90. Trodahl, HJ; Bittar, T
      Amorphous thin films: Insulators, metals, and semiconductors

      ADVANCED MATERIALS
    91. Zheng, WC; Wu, SY; Zi, J
      Defect structures for Fe3+, Mn2+, and Ni3+ impurities in wuritzite GaN crystals

      ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES
    92. Morkoc, H
      Comprehensive characterization of hydride VPE grown GaN layers and templates

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    93. Kucheyev, SO; Williams, JS; Pearton, SJ
      Ion implantation into GaN

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    94. Teofilov, N; Thonke, K; Sauer, R; Ebling, DG; Kirste, L; Benz, KW
      Near band-edge transitions in AlN thin films grown on different substrates

      DIAMOND AND RELATED MATERIALS
    95. Young, WT; Silva, SRP; Shannon, JM
      Laser annealing of low temperature grown gallium nitride

      DIAMOND AND RELATED MATERIALS
    96. Niehus, M; Schwarz, R; Koynov, S; Heuken, M; Meister, D; Meyer, BK
      Subbandgap absorption from photocurrent spectra in Al0.18GaN/GaN heterostructures

      DIAMOND AND RELATED MATERIALS
    97. Gaggero-Sager, LM; Mora-Ramos, ME
      Electronic energy spectrum of nitride single heterostructure field effect transistors

      DIAMOND AND RELATED MATERIALS
    98. Lawniczak-Jablonska, K; Iwanowski, RJ; Demchenko, IN; Boettcher, T; Einfeldt, S; Hommel, D; Cortes, R; Perera, RCC
      Polarization dependent X-ray absorption studies of the chemical bonds anisotropy in wurtzite GaN grown at different conditions

      JOURNAL OF ALLOYS AND COMPOUNDS
    99. Napierala, J; Gil-Lafon, E; Castelluci, D; Pimpinelli, A; Gerard, B
      Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE

      OPTICAL MATERIALS
    100. Piscopiello, E; Catalano, M; Antisari, MV; Passaseo, A; Branca, E; Cingolani, R; Berti, M
      Influence of the N-2/H-2 ratio on the structural features of InxGa1-xN/GaNfilms grown by MOCVD

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY


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Documento generato il 05/08/20 alle ore 12:58:03