Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'GALLIUM NITRIDE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 1182 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Ahn, SH; Lee, SH; Nahm, KS; Suh, EK; Hong, MH
      Catalytic growth of high quality GaN micro-crystals

      JOURNAL OF CRYSTAL GROWTH
    2. Shealy, JB; Smart, JA; Shealy, JR
      Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    3. Cumberland, RW; Blair, RG; Wallace, CH; Reynolds, TK; Kaner, RB
      Thermal control of metathesis reactions producing GaN and InN

      JOURNAL OF PHYSICAL CHEMISTRY B
    4. Lai, YH; Yeh, CT; Hwang, JM; Hwang, HL; Chen, CT; Hung, WH
      Sputtering and etching of GaN surfaces

      JOURNAL OF PHYSICAL CHEMISTRY B
    5. Kandalam, AK; Blanco, MA; Pandey, R
      Theoretical study of structural and vibrational properties of Al3N3, Ga3N3, and In3N3

      JOURNAL OF PHYSICAL CHEMISTRY B
    6. Muller, J; Bendix, S
      Insights into the chemical vapor deposition of GaN using the single-sourceprecursor Me2N(CH2)(3)Ga(N-3)(2): matrix isolation of Ga(N-3)

      CHEMICAL COMMUNICATIONS
    7. Muller, J; Wittig, B; Sternkicker, H; Bendix, S
      Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation: A powerful technique

      JOURNAL DE PHYSIQUE IV
    8. Parala, H; Devi, A; Rogge, W; Birkner, A; Fischer, RA
      Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors

      JOURNAL DE PHYSIQUE IV
    9. Hsu, CH; Ip, KP; Johnson, JW; Chu, SNG; Kryliouk, O; Pearton, SJ; Li, L; Chai, BHT; Anderson, TJ; Ren, F
      Wet chemical etching of LiGaO2 and LiAlO2

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    10. Jang, HW; Kim, JK; Jeon, CM; Lee, JL
      Room Temperature Ohmic contact on n-type GaN using plasma treatment

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    11. Reeber, RR; Wang, K
      High temperature elastic constant prediction of some group III-nitrides

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    12. Timoshkin, AY; Bettinger, HF; Schaefer, HF
      DFT modeling of chemical vapor deposition of GaN from organogallium precursors. 2. Structures of the oligomers and thermodynamics of the association processes

      JOURNAL OF PHYSICAL CHEMISTRY A
    13. Muller, J; Wittig, B; Bendix, S
      Synthesis of monomeric Me2GaD via a beta-hydrogen elimination at high temperatures. A matrix-isolation study

      JOURNAL OF PHYSICAL CHEMISTRY A
    14. Brillson, LJ
      Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    15. Fu, WB; Venkat, R; Meyyappan, M
      Theoretical study of GaN molecular beam epitaxy growth using electron cyclotron resonance nitrogen plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    16. Visconti, P; Reshchikov, MA; Jones, KM; Wang, DF; Cingolani, R; Morkoc, H; Molnar, RJ; Smith, DJ
      Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    17. Hashizume, T; Ootomo, S; Oyama, S; Konishi, M; Hasegawa, H
      Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    18. Kim, DW; Bae, JC; Kim, WJ; Baik, HK; Lee, SM
      Electrical properties of Pd-based ohmic contact to p-GaN

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    19. Nelson, DK; Yacobson, MA; Kagan, VD; Gil, B; Grandjean, N; Beaumont, B; Massies, J; Gibart, P
      Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells

      PHYSICS OF THE SOLID STATE
    20. Oliveira, IC; Otani, C; Maciel, HS; Massi, M; Noda, LK; Temperini, MLA
      Raman active E-2 modes in aluminum nitride films

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    21. Morkoc, H
      III-Nitride semiconductor growth by MBE: Recent issues

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    22. As, DJ; Kohler, U
      Carbon - an alternative acceptor for cubic GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    23. Nelson, D; Gil, B; Jacobson, MA; Kagan, VD; Grandjean, N; Beaumont, B; Massies, J; Gibart, P
      Impact ionization of excitons in an electric field in GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    24. Zhang, XB; Taliercio, T; Kolliakos, S; Lefebvre, P
      Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    25. Li, ZJ; Chen, XL; Li, HJ; Tu, QY; Yang, Z; Xu, YP; Hu, BQ
      Synthesis and Raman scattering of GaN nanorings, nanoribbons and nanowires

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    26. Fan, SS; Cao, J; Dang, HY; Gu, Q; Zhao, JH
      Growth of semiconductor nanowires on iron-patterned silicon substrates

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    27. Morkoc, H
      Comprehensive characterization of hydride VPE grown GaN layers and templates

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    28. Kucheyev, SO; Williams, JS; Pearton, SJ
      Ion implantation into GaN

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    29. Chisholm, JA; Bristowe, PD
      Formation energies of metal impurities in GaN

      COMPUTATIONAL MATERIALS SCIENCE
    30. Niehus, M; Schwarz, R; Koynov, S; Heuken, M; Meister, D; Meyer, BK
      Subbandgap absorption from photocurrent spectra in Al0.18GaN/GaN heterostructures

      DIAMOND AND RELATED MATERIALS
    31. Oba, M; Sugino, T
      Oriented growth of diamond on (0001) surface of hexagonal GaN

      DIAMOND AND RELATED MATERIALS
    32. Boscherini, F; Lantier, R; Rizzi, A; D'Acapito, F; Mobilio, S
      Growth at GaN/AlN hetero structures: a local view

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    33. Nishimura, S; Terashima, K
      Growth of c-GaN on Si(100)

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    34. Masri, P; Laridjani, MR; Breton, O; Averous, M
      Evaluation of SiC as a substrate material for nitride materials heteroepitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    35. Deiss, JL; Hirlimann, C; Loison, JL; Robino, M; Versini, G
      Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    36. Fall, CJ; Jones, R; Briddon, PR; Oberg, S
      Electronic and vibrational properties of Mg- and O-related complexes in GaN

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    37. Muret, P; Philippe, A; Monroy, E; Munoz, E; Beaumont, B; Omnes, F; Gibart, P
      Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    38. Mah, KW; McGlynn, E; Mosnier, JP; Henry, MO; Castro, J; O'Mahony, D; Lunney, JG
      Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    39. Borsella, E; Toe, SD; Mattei, G; Maurizio, C; Mazzoldi, P; Saber, A; Battaglin, GC; Cattaruzza, E; Gonella, F; Quaranta, A; D'Acapito, F
      Synthesis, structure and optical properties of GaN nanocrystals prepared by sequential ion implantation in dielectrics

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    40. Schweitzer, C; Frohlich, D; Reimann, K; Prystawko, P; Leszczynski, M; Suski, T
      Nonlinear spectroscopy of homoepitaxial GaN

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    41. Gebicki, W; Adamowicz, L; Strzeszewski, J; Podsiadlo, S; Szyszko, T; Kamler, G
      Raman scattering study of gallium nitride heavily doped with manganese

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    42. Sitarek, P; Kudrawiec, R; Sek, G; Misiewicz, J; Paszkiewicz, R; Korbutowicz, R; Paszkiewicz, B; Tlaczala, M
      Photoreflectance investigations of GaN epitaxial layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    43. Kim, T; Kim, HS; Hetterich, M; Jones, D; Girkin, JM; Bente, E; Dawson, MD
      Femtosecond laser machining of gallium nitride

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    44. Hommerich, U; Seo, JT; Abernathy, CR; Steckl, AJ; Zavada, JM
      Spectroscopic studies of the visible and infrared luminescence from Er doped GaN

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    45. Zavada, JM; Ellis, CJ; Lin, JY; Jiang, HX; Seo, JT; Hommerich, U; Thaik, M; Wilson, RG; Grudowski, PA; Dupuis, RD
      Annealing behavior of luminescence from erbium-implanted GaN films

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    46. Kim, S; Rhee, SJ; White, JO; Li, X; Papen, GC; Coleman, JJ; Bishop, SG
      Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    47. Kim, HM; Oh, JE; Kang, TW
      Nonuniformities in free-standing GaN substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    48. Bar-Ilan, AH; Zamir, S; Katz, O; Meyler, B; Salzman, J
      GaN layer growth optimization for high power devices

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    49. Wetzel, C; Amano, T; Akasaki, I; Ager, JW; Grzegory, I; Meyer, BK
      DX-like behavior of oxygen in GaN

      PHYSICA B
    50. Christou, A
      Charge transport in low-dimensional nitride semiconductor heterostructures

      PHYSICA B
    51. Grocholl, L; Wang, JJ; Gillan, EG
      Solvothermal azide decomposition route to GaN nanoparticles, nanorods, andfaceted crystallites

      CHEMISTRY OF MATERIALS
    52. Ranade, MR; Tessier, F; Navrotsky, A; Marchand, R
      Calorimetric determination of the enthalpy of formation of InN and comparison with AlN and GaN

      JOURNAL OF MATERIALS RESEARCH
    53. Guan, ZP; Cai, AL; Porter, H; Cabalu, J; Chen, J; Huang, S; Giedd, RE
      GaN grown on two-step cleaned C-terminated 6H-SiC by molecular-beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    54. Feng, ZC; Wang, W; Chua, SJ; Zhang, PX; Williams, KPJ; Pitt, GD
      Raman scattering properties of GaN thin films grown on sapphire under visible and ultraviolet excitation

      JOURNAL OF RAMAN SPECTROSCOPY
    55. Look, DC
      Defect-related donors, acceptors, and traps in GaN

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    56. Beaumont, B; Vennegues, P; Gibart, P
      Epitaxial lateral overgrowth of GaN

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    57. Ronning, C; Carlson, EP; Davis, RF
      Ion implantation into gallium nitride

      PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
    58. Jothilingam, R; Koch, MW; Posthill, JB; Wicks, GW
      A study of cracking in GaN grown on silicon by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    59. Kim, DW; Bae, JC; Kim, WJ; Baik, HK; Kim, CY; Kim, W; Choi, YH; Kim, CK; Yoo, TK; Hong, CH; Lee, SM
      Development of Al-free ohmic contact to n-GaN

      JOURNAL OF ELECTRONIC MATERIALS
    60. Lin, YJ; Lee, HY; Hwang, FT; Lee, CT
      Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

      JOURNAL OF ELECTRONIC MATERIALS
    61. Hsu, JWP; Lang, DV; Richter, S; Kleiman, RN; Sergent, AM; Look, DC; Molnar, RJ
      Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    62. Schweitz, KO; Mohney, SE
      Phase equilibria in transition metal Al-Ga-N systems and thermal stabilityof contacts to AlGaN

      JOURNAL OF ELECTRONIC MATERIALS
    63. Jang, JS; Kim, DJ; Park, SJ; Seong, TY
      Electrical characteristics of thermally stable Ru and Ru/Au ohmic contactsto surface-treated p-type GaN

      JOURNAL OF ELECTRONIC MATERIALS
    64. Qi, YD; Musante, C; Lau, KM; Smith, L; Odedra, R; Kanjolia, R
      OMVPE growth of P-type GaN using solution Cp2Mg

      JOURNAL OF ELECTRONIC MATERIALS
    65. Fornari, R; Bosi, M; Bersani, D; Attolini, G; Lottici, PP; Pelosi, C
      Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    66. Ho, AHP; Kwok, DTK; Zeng, XC; Chan, C; Chu, PK
      Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing

      SURFACE & COATINGS TECHNOLOGY
    67. Bockowski, M
      Growth and doping of GaN and AlN single crystals under high nitrogen pressure

      CRYSTAL RESEARCH AND TECHNOLOGY
    68. Kityk, IV; Malachowski, MJ
      Electronic structure and x-ray photoelectron spectroscopy of wurtzite GaxAl1-xN solid alloy

      CRYSTAL RESEARCH AND TECHNOLOGY
    69. Godlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM
      Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer

      APPLIED SURFACE SCIENCE
    70. Adam, T; Kolodzey, J; Swann, CP; Tsao, MW; Rabolt, JF
      The electrical properties of MIS capacitors with ALN gate dielectrics

      APPLIED SURFACE SCIENCE
    71. Li, YG; Wee, ATS; Huan, CHA; Zheng, JC
      Ion-induced nitridation of GaAs(100) surface

      APPLIED SURFACE SCIENCE
    72. Kumar, MS; Kesavamoorthy, R; Magudapathy, P; Nair, KGM; Kumar, J
      Raman scattering studies on hydrogen ion-implanted GaN

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    73. Liu, C; Wenzel, A; Rauschenbach, B; Alves, E; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC; Fan, XJ
      Amorphization of GaN by ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    74. Kench, PJ; Shannon, JM; Shao, G; Tsakiropoulos, P; Silva, SRP
      Ion beam synthesis of gallium nitride

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    75. Rodina, AV; Dietrich, M; Goldner, A; Eckey, L; Hoffmann, A; Efros, AL; Rosen, M; Meyer, BK
      Free excitons in wurtzite GaN - art. no. 115204

      PHYSICAL REVIEW B
    76. Goni, AR; Siegle, H; Syassen, K; Thomsen, C; Wagner, JM
      Effect of pressure on optical phonon modes and transverse effective charges in GaN and AlN - art. no. 035205

      PHYSICAL REVIEW B
    77. Anderson, DR; Zakhleniuk, NA; Babiker, M; Ridley, BK; Bennett, CR
      Polar-optical phonon-limited transport in degenerate GaN-based quantum wells - art. no. 245313

      PHYSICAL REVIEW B
    78. Bernardini, F; Fiorentini, V; Vanderbilt, D
      Accurate calculation of polarization-related quantities in semiconductors - art. no. 193201

      PHYSICAL REVIEW B
    79. Ramos, LE; Teles, LK; Scolfaro, LMR; Castineira, JLP; Rosa, AL; Leite, JR
      Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds - art. no. 165210

      PHYSICAL REVIEW B
    80. Hao, M; Chua, SJ; Zhang, XH; Wang, W; Sia, EK; Wang, LS; Raman, A; Li, P; Liu, W
      Electron-hole plasma emission from In0.3Ga0.7N/GaN multiple quantum wells - art. no. 121308

      PHYSICAL REVIEW B
    81. Limpijumnong, S; Lambrecht, WRL
      Theoretical study of the relative stability of wurtzite and rocksalt phases in MgO and GaN - art. no. 104103

      PHYSICAL REVIEW B
    82. Sun, CK; Chu, SW; Tai, SP; Keller, S; Abare, A; Mishra, UK; DenBaars, SP
      Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy

      SCANNING
    83. Kuball, M
      Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

      SURFACE AND INTERFACE ANALYSIS
    84. Davis, RF; Gehrke, T; Linthicum, KJ; Zheleva, TS; Rajagopal, P; Zorman, CA; Mehregany, M
      Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

      ZEITSCHRIFT FUR METALLKUNDE
    85. Qu, B; Zheng, XH; Wang, YT; Feng, ZH; Liu, SA; Lin, SM; Yang, H; Liang, JW
      X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

      THIN SOLID FILMS
    86. McGinnis, AJ; Thomson, D; Davis, RF; Chen, E; Michel, A; Lamb, HH
      Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

      SURFACE SCIENCE
    87. Schieffer, P; Jezequel, G; Lepine, B; Sebilleau, D; Feuillet, G; Daudin, B
      X-ray photoelectron diffraction from cubic GaN(001): an experimental and theoretical study

      SURFACE SCIENCE
    88. Kowalski, BJ; Plucinski, L; Kopalko, K; Iwanowski, RJ; Orlowski, BA; Johnson, RL; Grzegory, I; Porowski, S
      Photoemission studies on GaN(0 0 0 (1)over-bar) surfaces

      SURFACE SCIENCE
    89. Pavlovska, A; Bauer, E
      Wetting and reactive thin film growth

      SURFACE SCIENCE
    90. Oxley, CH
      Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs

      SOLID-STATE ELECTRONICS
    91. Kent, DG; Lee, KP; Zhang, AP; Luo, B; Overberg, ME; Abernathy, CR; Ren, F; Mackenzie, KD; Pearton, SJ; Nakagawa, Y
      Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes

      SOLID-STATE ELECTRONICS
    92. O'Leary, SK; Foutz, BE; Shur, MS; Eastman, LF
      Polar optical phonon instability and intervalley transfer in III-V semiconductors

      SOLID STATE COMMUNICATIONS
    93. Pan, YC; Wang, SF; Lee, WH; Lin, WC; Chiang, CI; Chang, H; Hsieh, HH; Chen, JM; Lin, DS; Lee, MC; Chen, WK; Chen, WH
      Structure study of GaN : Mg films by X-ray absorption near-edge structure spectroscopy

      SOLID STATE COMMUNICATIONS
    94. Cherns, D; Jiao, CG
      Electron holography studies of the charge on dislocations in GaN - art. no. 205504

      PHYSICAL REVIEW LETTERS
    95. Limpijumnong, S; Lambrecht, WRL
      Homogeneous strain deformation path for the wurtzite to rocksalt high-pressure phase transition in GaN

      PHYSICAL REVIEW LETTERS
    96. Ozono, K; Obara, M; Usui, A; Sunakawa, H
      High-speed ablation etching of GaN semiconductor using femtosecond laser

      OPTICS COMMUNICATIONS
    97. Wang, WY; Xu, YP; Zhang, DF; Chen, XL
      Synthesis and dielectric properties of cubic GaN nanoparticles

      MATERIALS RESEARCH BULLETIN
    98. Gu, SL; Zhang, R; Shi, Y; Zheng, YD
      Epitaxial lateral overgrowth of GaN on molecular beam epitaxy GaN buffer layers on Si substrates by hydride vapour phase epitaxy

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    99. Harutyunyan, VS; Aivazyan, AP; Weber, ER; Kim, Y; Park, Y; Subramanya, SG
      High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    100. Chen, CC; Yeh, CC; Liang, CH; Lee, CC; Chen, CH; Yu, MY; Liu, HL; Chen, LC; Lin, YS; Ma, KJ; Chen, KH
      Preparation and characterization of carbon nanotubes encapsulated GaN nanowires

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/10/20 alle ore 20:28:04