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    1. Liliental-Weber, Z; Benamara, M; Washburn, J; Domagala, JZ; Bak-Misiuk, J; Piner, EL; Roberts, JC; Bedair, SM
      Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

      JOURNAL OF ELECTRONIC MATERIALS
    2. Hao, M; Chua, SJ; Zhang, XH; Wang, W; Sia, EK; Wang, LS; Raman, A; Li, P; Liu, W
      Electron-hole plasma emission from In0.3Ga0.7N/GaN multiple quantum wells - art. no. 121308

      PHYSICAL REVIEW B
    3. Teles, LK; Furthmuller, J; Scolfaro, LMR; Leite, JR; Bechstedt, F
      Influence of composition fluctuations and strain on gap bowing in InxGa1-xN - art. no. 085204

      PHYSICAL REVIEW B
    4. Grosse, F; Neugebauer, J
      Limits and accuracy of valence force field models for InxGa1-xN alloys - art. no. 085207

      PHYSICAL REVIEW B
    5. Chichibu, SF; Sota, T; Wada, K; Brandt, O; Ploog, KH; DenBaars, SP; Nakamura, S
      Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    6. Okumura, T; Akagi, Y
      Numerical analysis of InGaN dot-like structure and compositional fluctuation caused by phase separation: comparison with experiment

      JOURNAL OF CRYSTAL GROWTH
    7. Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS
      Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model

      JOURNAL OF CRYSTAL GROWTH
    8. Kent, PRC; Zunger, A
      Carrier localization and the origin of luminescence in cubic InGaN alloys

      APPLIED PHYSICS LETTERS
    9. Wen, TC; Lee, WI
      Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Tojyo, T; Asano, T; Takeya, M; Hino, T; Kijima, S; Goto, S; Uchida, S; Ikeda, M
      GaN-based high power blue-violet laser diodes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    11. Ishikawa, H; Nakada, N; Morn, M; Zhao, GY; Egawa, T; Jimbo, T; Umeno, M
      Suppression of GaInN/GaN multi-quantum-well decomposition during growth oflight-emitting-diode structure

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    12. Hanser, AD; Banks, AD; Davis, RF; Jahnen, B; Albrecht, M; Dorsch, W; Christiansen, S; Strunk, HP
      Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    13. Ng, HM; Moustakas, TD; Ludwig, KF
      Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    14. Nakamura, S
      UV/blue/green InGaN-based LEDs and laser diodes grown on epitaxially laterally overgrown GaN

      IEICE TRANSACTIONS ON ELECTRONICS
    15. Ishikawa, H; Nakada, N; Nakaji, M; Zhao, GY; Egawa, T; Jimbo, T; Umeno, M
      Investigations on strained AlGaN/GaN/sapphire and GaInN multi-quantum-wellsurface LEDs using AlGaN/GaN Bragg reflectors

      IEICE TRANSACTIONS ON ELECTRONICS
    16. Wetzel, C; Detchprohm, T; Takeuchi, T; Amano, H; Akasaki, I
      Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices

      JOURNAL OF ELECTRONIC MATERIALS
    17. Damilano, B; Grandjean, N; Massies, J; Semond, F
      GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range

      APPLIED SURFACE SCIENCE
    18. Wetzel, C; Takeuchi, T; Amano, H; Akasaki, I
      Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells

      PHYSICAL REVIEW B
    19. Chichibui, SF; Setoguchi, A; Azuhata, T; Mullhauser, J; Sugiyama, M; Mizutani, T; Deguchi, T; Nakanishi, H; Sota, T; Brandt, O; Ploog, KH; Mukai, T; Nakamura, S
      Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    20. Kaschner, A; Hoffmann, A; Thomsen, C; Bottcher, T; Einfeldt, S; Hommel, D
      Evidence for phase separation in InGaN by resonant Raman scattering

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    21. Wakahara, A; Genba, J; Yoshida, A; Saiki, H
      Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    22. Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS
      Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model

      JOURNAL OF APPLIED PHYSICS
    23. Lin, YS; Ma, KJ; Hsu, C; Feng, SW; Cheng, YC; Liao, CC; Yang, CC; Chou, CC; Lee, CM; Chyi, JI
      Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

      APPLIED PHYSICS LETTERS
    24. Krost, A; Blasing, J; Protzmann, H; Lunenburger, M; Heuken, M
      Indium nanowires in thick (InGaN) layers as determined by x-ray analysis

      APPLIED PHYSICS LETTERS
    25. Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS
      Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    26. Wetzel, C; Amano, H; Akasaki, I
      Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    27. Kamiyama, S; Iwaya, M; Amano, H; Akasaki, I
      Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GdInN active layer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    28. Takeuchi, T; Amano, H; Akasaki, I
      Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    29. Takahashi, H; Ito, A; Tanaka, T; Watanabe, A; Ota, H; Chikuma, K
      Effect of intentionally formed 'V-defects' on the emission efficiency of GaInN single quantum well

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    30. Schoen, O; Protzmann, H; Rockenfeller, O; Schineller, B; Heuken, M; Juergensen, H
      GaInN/GaN heterostructures grown in production scale MOVPE reactors

      JOURNAL DE PHYSIQUE IV
    31. Cherns, D; Barnard, J; Mokhtari, H
      Characterisation of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    32. Brandt, O; Mullhauser, JR; Trampert, A; Ploog, KH
      Properties of cubic (In,Ga)N grown by molecular beam epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    33. Scholz, F; Off, J; Kniest, A; Gorgens, L; Ambacher, O
      Influence of strain and buffer layer type on In incorporation during GaInNMOVPE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    34. Im, JS; Kollmer, H; Off, J; Scholz, F; Hangleiter, A
      Carrier confinement in GaInNi/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    35. Hofmann, R; Wagner, V; Neuner, M; Off, J; Scholz, F; Schweizer, H
      Optically pumped GaInN/GaN-DFB lasers: overgrown lasers and vertical modes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    36. Grandjean, N; Massies, J
      GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3

      JOURNAL OF CRYSTAL GROWTH
    37. Doppalapudi, D; Basu, SN; Moustakas, TD
      Domain structure in chemically ordered InxGa1-xN alloys grown by molecularbeam epitaxy

      JOURNAL OF APPLIED PHYSICS
    38. Silveira, E; Tabata, A; Leite, JR; Trentin, R; Lemos, V; Frey, T; As, DJ; Schikora, D; Lischka, K
      Evidence of phase separation in cubic InxGa1-xN epitaxial layers by resonant Raman scattering

      APPLIED PHYSICS LETTERS
    39. Steude, G; Meyer, BK; Goldner, A; Hoffmann, A; Bertram, F; Christen, J; Amano, H; Akasaki, I
      Optical investigations of AlGaN on GaN epitaxial films

      APPLIED PHYSICS LETTERS
    40. Wang, T; Sugahara, T; Sakai, S; Orton, J
      The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode

      APPLIED PHYSICS LETTERS
    41. Mukai, T; Yamada, M; Nakamura, S
      Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    42. Mukai, T; Nakamura, S
      Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    43. Tabuchi, M; Takeda, Y; Matsumoto, N; Amano, H; Akasaki, I
      X-ray interference and crystal truncation rod observation of GaN and GaInNlayers grown on sapphire with AlN buffer layer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    44. Wetzel, C; Takeuchi, T; Amano, H; Akasaki, I
      Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    45. Damilano, B; Vezian, S; Grandjean, N; Massies, J
      Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    46. KAWAKAMI Y; NARUKAWA Y; SAWADA K; SAIJYO S; FUJITA S; FUJITA S
      THE MECHANISM OF RADIATIVE RECOMBINATION IN LIGHT-EMITTING DEVICES COMPOSED ON INGAN QUANTUM-WELLS

      Electronics & communications in Japan. Part 2, Electronics
    47. SASAKI F; KOBAYASHI S; TANI T; YAMADA Y; TAGUCHI T; NAKAMURA S; SHINOMIYA G
      HIGHLY EXCITED LUMINESCENCE IN INGAN EPITAXIAL-FILMS - ORIGINS OF THEBLUE-GREEN EMISSION

      Journal of luminescence
    48. SCHOLZ F; OFF J; SOHMER A; SYGANOW V; DORNEN A; AMBACHER O
      MOVPE OF GAINN HETEROSTRUCTURES AND QUANTUM-WELLS

      Journal of crystal growth
    49. IM JS; HEPPEL S; KOLLMER H; SOHMER A; OFF J; SCHOLZ F; HANGLEITER A
      EVIDENCE FOR QUANTUM-DOT-LIKE STATES IN GAINN GAN QUANTUM-WELLS/

      Journal of crystal growth
    50. TAKEUCHI T; SOTA S; SAKAI H; AMANOA H; AKASAKI I; KANEKO Y; NAKAGAWA S; YAMAOKA Y; YAMADA N
      QUANTUM-CONFINED STARK-EFFECT IN STRAINED GAINN QUANTUM-WELLS ON SAPPHIRE(0001)

      Journal of crystal growth
    51. WETZEL C; TAKEUCHI T; AMANO H; AKASAKI I
      VALENCE-BAND SPLITTING AND LUMINESCENCE STOKES SHIFT IN GAINN GAN THIN-FILMS AND MULTIPLE-QUANTUM-WELL STRUCTURES/

      Journal of crystal growth
    52. SAKAI H; TAKEUCHI T; SOTA S; KATSURAGAWA M; KOMORI M; AMANO H; AKASAKI I
      STIMULATED-EMISSION WITH THE LONGEST WAVELENGTH IN THE BLUE REGION FROM GAINN GAN MULTIQUANTUM-WELL STRUCTURES/

      Journal of crystal growth
    53. Keller, S; Chichibu, SF; Minsky, MS; Hu, E; Mishra, UK; DenBaars, SP
      Effect of the growth rate and the barrier doping on the morphology and theproperties of InGaN/GaN quantum wells

      JOURNAL OF CRYSTAL GROWTH
    54. Off, J; Kniest, A; Vorbeck, C; Scholz, F; Ambacher, O
      Influence of buffer layers on the In-content of GaInN layers

      JOURNAL OF CRYSTAL GROWTH
    55. POPHRISTIC M; LONG FH; TRAN C; KARLICEK RF; FENG ZC; FERGUSON IT
      TIME-RESOLVED SPECTROSCOPY OF INXGA1-XN GAN MULTIPLE-QUANTUM WELLS ATROOM-TEMPERATURE/

      Applied physics letters
    56. HOFSTETTER D; THORNTON RL; KNEISSL M; BOUR DP; DUNNROWICZ C
      DEMONSTRATION OF AN INGAN GAN-BASED OPTICALLY PUMPED MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK LASER USING HOLOGRAPHICALLY DEFINED 3RD-ORDER GRATINGS/

      Applied physics letters
    57. WETZEL C; TAKEUCHI T; YAMAGUCHI S; KATOH H; AMANO H; AKASAKI I
      OPTICAL BAND-GAP IN GA1-XINXN (O-LESS-THAN-X-LESS-THAN-0.2) ON GAN BYPHOTOREFLECTION SPECTROSCOPY

      Applied physics letters
    58. ROMANO LT; KRUSOR BS; MCCLUSKEY MD; BOUR DP; NAUKA K
      STRUCTURAL AND OPTICAL-PROPERTIES OF PSEUDOMORPHIC INXGA1-XN ALLOYS

      Applied physics letters
    59. Mullhauser, JR; Brandt, O; Trampert, A; Jenichen, B; Ploog, KH
      Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy

      APPLIED PHYSICS LETTERS
    60. Pophristic, M; Long, FH; Tran, C; Ferguson, IT; Karlicek, RF
      Time-resolved photoluminescence measurements of InGaN light-emitting diodes

      APPLIED PHYSICS LETTERS
    61. Wang, T; Nakagawa, D; Wang, J; Sugahara, T; Sakai, S
      Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells

      APPLIED PHYSICS LETTERS
    62. HOFMANN R; WAGNER V; GAUGGEL HP; ADLER F; ERNST P; BOLAY H; SOHMER A; SCHOLZ F; SCHWEIZER HC
      REALIZATION AND CHARACTERIZATION OF OPTICALLY PUMPED GAINN-GAN DFB LASERS

      IEEE journal of selected topics in quantum electronics
    63. SCHOLZ F; SOHMER A; OFF J; SYGANOW V; DORNEN A; IM JS; HANGLEITER A; LAKNER H
      IN INCORPORATION EFFICIENCY AND COMPOSITION FLUCTUATIONS IN MOVPE GROWN GAINN GAN HETERO STRUCTURES AND QUANTUM-WELLS/

      Materials science & engineering. B, Solid-state materials for advanced technology
    64. HANGLEITER A; FRANKOWSKY G; HARLE V; SCHOLZ F
      OPTICAL GAIN IN THE NITRIDES - ARE THERE DIFFERENCES TO OTHER III-V SEMICONDUCTORS

      Materials science & engineering. B, Solid-state materials for advanced technology
    65. HO IH; STRINGFELLOW GB
      SOLUBILITY OF NITROGEN IN BINARY III-V SYSTEMS

      Journal of crystal growth
    66. AKASAKI I; AMANO H
      CRYSTAL-GROWTH AND CONDUCTIVITY CONTROL OF GROUP-III NITRIDE SEMICONDUCTORS AND THEIR APPLICATION TO SHORT-WAVELENGTH LIGHT EMITTERS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. TAKEUCHI T; SOTA S; KATSURAGAWA M; KOMORI M; TAKEUCHI H; AMANO H; AKASAKI I
      QUANTUM-CONFINED STARK-EFFECT DUE TO PIEZOELECTRIC FIELDS IN GAINN STRAINED QUANTUM-WELLS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    68. NAKAJIMA S; YANG T; SAKAI S
      VALENCE-BAND-EDGE ENERGY OF GROUP-III NITRIDE ALLOY SEMICONDUCTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    69. SAKAI H; KOIDE T; SUZUKI H; YAMAGUCHI M; YAMASAKI S; KOIKE M; AMANO H; AKASAKI I
      GAN GAINN/GAN DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE FABRICATED USING PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


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Documento generato il 05/08/20 alle ore 13:37:29