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La ricerca find articoli where soggetti phrase all words 'GAAS(110)' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 557 riferimenti
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    1. Ebert, P
      Atomic structure of point defects in compound semiconductor surfaces

      CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
    2. Zvonareva, TK; Ivanov-Omskii, VI; Rozanov, VV; Sharonova, LV
      Scanning tunneling spectroscopy of a-C : H and a-C :(H, Cu) films preparedby magnetron sputtering

      SEMICONDUCTORS
    3. Mankefors, S; Nilsson, PO
      Revised charge redistribution on semiconductor III-V (110) surfaces

      JOURNAL OF PHYSICS-CONDENSED MATTER
    4. Wu, JX; Li, FQ; Zhu, JS; Wang, ZM; Ji, MR; Ma, MS
      The annealing behaviour of a Cs2O/GaAs(110) surface studied by electron spectroscopy

      JOURNAL OF PHYSICS-CONDENSED MATTER
    5. Wijers, CMJ; de Boeij, PL
      Nonlocality and discrete cellular methods in optics

      PHYSICA B
    6. Guasch, C; Doukkali, A; Bonnet, J
      Low temperature work function variations of the Au/GaSb (110) interface: Experimental results and theoretical model

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    7. Strasser, T; Solterbeck, C; Schattke, W; Bartos, I; Cukr, M; Jiricek, P; Fadley, CS; Van Hove, MA
      A theoretical investigation of photoemission spectra from (GaAs)(2)(AlAs)(2) superlattices

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    8. Videcoq, A; Pimpinelli, A; Vladimirova, M
      Kinetic Monte Carlo study of the terrace width distribution during step bunching in homoepitaxial growth

      APPLIED SURFACE SCIENCE
    9. Pimpinelli, A; Videcoq, A; Vladimirova, M
      Kinetic surface patterning in two-particle models of epitaxial growth

      APPLIED SURFACE SCIENCE
    10. Kasai, S; Negoro, N; Hasegawa, H
      Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductors

      APPLIED SURFACE SCIENCE
    11. Tagami, K; Sasaki, N; Tsukada, M
      Simulated nc-AFM images of Si(001) surface with nanotube tip

      APPLIED SURFACE SCIENCE
    12. Inaoka, T
      Elementary excitations at doped polar semiconductor surfaces with carrier-depletion layers

      APPLIED SURFACE SCIENCE
    13. Nannarone, S; Pasquali, L
      Surface electronic properties by metastable deexcitation spectroscopy

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    14. Maroutian, T; Douillard, L; Ernst, HJ
      Morphological instability of Cu vicinal surfaces during step-flow growth -art. no. 165401

      PHYSICAL REVIEW B
    15. Gworek, CS; Phatak, P; Jonker, BT; Weber, ER; Newman, N
      Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights - art. no. 045322

      PHYSICAL REVIEW B
    16. Kanasaki, J; Mikasa, N; Tanimura, K
      Laser-induced electronic desorption from InP surfaces studied by femtosecond nonresonant ionization spectroscopy - art. no. 035414

      PHYSICAL REVIEW B
    17. Strasser, T; Solterbeck, C; Schattke, W; Bartos, I; Cukr, M; Jiricek, P; Fadley, CS; Van Hove, MA
      One-step photoemission calculations for ideal GaAs(001) and AlAs(001) surfaces and (GaAs)(m)(AlAs)(n) superlattices - art. no. 195321

      PHYSICAL REVIEW B
    18. Okada, H; Fujimoto, Y; Endo, K; Hirose, K; Mori, Y
      Detailed analysis of scanning tunneling microscopy images of the Si(001) reconstructed surface with buckled dimers - art. no. 195324

      PHYSICAL REVIEW B
    19. Inaoka, T
      Evolution of elementary excitations at a doped polar semiconductor surfacein a depletion-layer formation process - art. no. 165322

      PHYSICAL REVIEW B
    20. Betti, MG; Corradini, V; Bertoni, G; Casarini, P; Mariani, C; Abramo, A
      Density of states of a two-dimensional electron gas at semiconductor surfaces - art. no. 155315

      PHYSICAL REVIEW B
    21. Strasser, T; Solterbeck, C; Schattke, W; Bartos, I; Cukr, M; Jiricek, P
      Valence-band photoemission from GaAs(100)-c(4x4) - art. no. 085309

      PHYSICAL REVIEW B
    22. Gebauer, J; Krause-Rehberg, R; Domke, C; Ebert, P; Urban, K; Staab, TEM
      Direct identification of As vacancies in GaAs using positron annihilation calibrated by scanning tunneling microscopy - art. no. 045203

      PHYSICAL REVIEW B
    23. Tagami, K; Tsukada, M
      Tight-binding study of noncontact atomic force microscopy images of Si(001) surfaces

      SURFACE SCIENCE
    24. Nagashima, A; Tazima, M; Nishimura, A; Takagi, Y; Yoshino, J
      Structural analysis of GaAs(001)-c(4 x 4) with LEED IV technique

      SURFACE SCIENCE
    25. Inaoka, T
      Kinematic analysis of a dispersion region probed in reflection electron energy-loss spectroscopy

      SURFACE SCIENCE
    26. Calzolari, A; Pignedoli, CA; Di Felice, R; Bertoni, CM; Catellani, A
      Theory of Cs adsorption on InAs(110)

      SURFACE SCIENCE
    27. Troger, H; Theis, W; Rieder, KH
      Surface phonons of GaP(110) and InAS(110)

      SURFACE SCIENCE
    28. Eggeling, J; Bell, GR; Jones, TS
      Resonant vibrational excitation of H-GaAs(001) in HREELS

      SURFACE SCIENCE
    29. Yamada, T; Fujii, J; Mizoguchi, T
      STM, STS, and local work function study of Cs/p-GaAs(110)

      SURFACE SCIENCE
    30. Betti, MG; Corradini, V; Bertoni, G; Gardonio, S; Mariani, C; Gavioli, L; Belkhou, R; Taleb-Ibrahimi, A
      Adsorption sites at Cs nanowires grown on the InAs(110) surface

      SURFACE SCIENCE
    31. Camillone, N; Khan, KA; Yarmoff, JA; Osgood, RM
      Surface-reconstruction-switched adsorbate photofragmentation dynamics - art. no. 056101

      PHYSICAL REVIEW LETTERS
    32. Kim, TW; Lee, DU; Jung, M; Lee, JH; Kim, HJ; Choo, DC; Kim, JY; Yoon, YS
      Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    33. Williams, RS; Ashwin, MJ; Neave, JH; Jones, TS
      Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(001) substrates

      JOURNAL OF CRYSTAL GROWTH
    34. Herrmann, G; Okada, M; Murata, Y
      Scattering of hyperthermal molecular ions from Pt(111)

      JOURNAL OF CHEMICAL PHYSICS
    35. Semmler, U; Simon, M; Ebert, P; Urban, K
      Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects

      JOURNAL OF CHEMICAL PHYSICS
    36. Pritchard, RE; Oulton, RF; Stavrinou, PN; Parry, G; Williams, RS; Ashwin, MJ; Neave, JH; Jones, TS
      Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates

      JOURNAL OF APPLIED PHYSICS
    37. Ebert, P; Quadbeck, P; Urban, K; Henninger, B; Horn, K; Schwarz, G; Neugebauer, J; Scheffler, M
      Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors

      APPLIED PHYSICS LETTERS
    38. Ono, S; Takeuchi, M; Takahashi, T
      Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates

      APPLIED PHYSICS LETTERS
    39. Ebert, P; Domke, C; Urban, K
      Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy

      APPLIED PHYSICS LETTERS
    40. Hida, A; Mera, Y; Maeda, K
      Nanometer-scale measurements of photoabsorption spectra of individual defects in semiconductors

      APPLIED PHYSICS LETTERS
    41. McKay, HA; Feenstra, RM; Schmidtling, T; Pohl, UW
      Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

      APPLIED PHYSICS LETTERS
    42. Su, WB; Chang, SH; Chang, CS; Chen, LJ; Tsong, TT
      Quantum size effects in low-temperature growth of Pb islands on Si(111)7 x7 surfaces

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    43. Yoshita, M; Akiyama, H; Pfeiffer, LN; West, KW
      Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    44. Beerbom, M; Mayer, T; Jaegermann, W
      Synchrotron-induced photoemission of emersed GaAs electrodes after electrochemical etching in Br-2/H2O solutions

      JOURNAL OF PHYSICAL CHEMISTRY B
    45. Grabowski, SP; Nienhaus, H; Monch, W
      HREELS investigation of hydrogenated and deuterated GaN{0001} surfaces

      EUROPEAN PHYSICAL JOURNAL B
    46. Crljen, Z
      Optical spectroscopy of negative-U centers

      JOURNAL DE PHYSIQUE IV
    47. Gay, SCA; Srivastava, GP
      Ab initio investigation of Bi-covered GaSb(110) surfaces

      PHYSICAL REVIEW B
    48. Oscarsson, H; He, ZQ; Ilver, L; Kanski, J; Mankefors, S; Nilsson, PO; Karlsson, UO
      Interaction between As and InP(110) studied by photoemission

      PHYSICAL REVIEW B
    49. de la Broise, X; Delerue, C; Lannoo, M; Grandidier, B; Stievenard, D
      Theory of scanning tunneling microscopy of defects on semiconductor surfaces

      PHYSICAL REVIEW B
    50. Wang, WK; Simpson, WC; Yarmoff, JA
      Reactions of I-2 and Cl-2 with In- and As-terminated InAs(001)

      PHYSICAL REVIEW B
    51. Park, KH; Ha, JS; Yun, WS; Shin, M; Ko, YJ
      Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    52. Davydov, SY
      Metal-semiconductor transitions induced by adsorption of alkali metals on the Si(001) surface

      PHYSICS OF THE SOLID STATE
    53. Ahn, JR; Kim, HW; Lee, KD; Chung, JW
      Physical properties of the Ba-adsorbed Si(111) surface at elevated temperatures

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    54. Halaoui, LI; Wells, RL; Coury, LA
      STM and TS study of InAs quantum dots immobilized on Au and Pt surfaces

      CHEMISTRY OF MATERIALS
    55. Lin, G; Zhao, TX; Liu, HT; Yang, HW; Ji, MR
      Photoemission studies of K-promoted oxidation of the GaAs(110) surface

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    56. Morgenstern, M; Haude, D; Gudmundsson, V; Wittneven, C; Dombrowski, R; Steinebach, C; Wiesendanger, R
      Low temperature scanning tunneling spectroscopy on InAs(110)

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    57. Teodorescu, CM; Chevrier, F; Richter, C; Ilakovac, V; Heckmann, O; Lechevalier, L; Brochier, R; Johnson, RL; Hricovini, K
      Structure of Fe layers grown on InAs(100)

      APPLIED SURFACE SCIENCE
    58. Aristov, VY; Zhilin, VM; Grupp, C; Taleb-Ibrahimi, A; Kim, HJ; Mangat, PS; Soukiassian, P; Le Lay, G
      Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces

      APPLIED SURFACE SCIENCE
    59. Lee, G; Mai, H; Chizhov, I; Willis, RF
      STM study of the charged defects on the Ge(111)-c(2 x 8) surface and the effect of density of states on defect-induced perturbation

      APPLIED SURFACE SCIENCE
    60. Kim, TW; Lee, DU; Lee, JH; Yoon, YS; Lee, JY; Park, HL
      Surface and interface microstructural properties of Ru thin films grown onInSb (111) substrates at room temperature

      APPLIED SURFACE SCIENCE
    61. Fritsch, J; Arnold, M; Schroder, U
      Ab initio calculation of the phonon dispersion of antimony-covered (110) surfaces of III-V compounds

      PHYSICAL REVIEW B
    62. Haase, G
      Surface photovoltage imaging for the study of local electronic structure at semiconductor surfaces

      INTERNATIONAL REVIEWS IN PHYSICAL CHEMISTRY
    63. Erkoc, S; Kokten, H
      Energetics of arsenic terminated GaAs(001) surfaces

      INTERNATIONAL JOURNAL OF MODERN PHYSICS C
    64. Schattke, W
      Electron scattering states for low-energy spectroscopies

      PROGRESS IN SURFACE SCIENCE
    65. Lee, G; Mai, H; Chizhov, I; Willis, RF
      Charged defects on Ge(111)-c(2 x 8): characterization using STM

      SURFACE SCIENCE
    66. Wang, WK; Qiu, SR; Corbitt, B; Riggs, ST; Yarmoff, JA
      Chemisorption of iodine on In- and Sb-terminated InSb(001)

      SURFACE SCIENCE
    67. Khan, KA; Camillone, N; Yarmoff, JA; Osgood, RM
      Modification of the surface termination of GaAs(001) using photon-activated electron-transfer reactions

      SURFACE SCIENCE
    68. Tong, SY
      Why is the positron an ideal particle for studying surface structure?

      SURFACE SCIENCE
    69. Tutuncu, HM; Srivastava, GP
      Atomic geometry, electronic states and vibrational properties of the AlAs(110) surface

      SURFACE SCIENCE
    70. Mariani, C
      A high-resolution photoemission study of confined metal systems on InAs(110)

      SURFACE SCIENCE
    71. Betti, MG; Bertoni, G; Corradini, V; De Renzi, V; Mariani, C
      Metal-induced gap states at InAs(110) surface

      SURFACE SCIENCE
    72. Camillone, N; Khan, KA; Osgood, RM
      The thermal chemistry of model organosulfur compounds on gallium arsenide (110)

      SURFACE SCIENCE
    73. Modesti, S; Falasca, A; Polentarutti, M; Betti, MG; De Renzi, V; Mariani, C
      Evolution of one-dimensional Cs chains on InAs(110) as determined by scanning-tunneling microscopy and core-level spectroscopy

      SURFACE SCIENCE
    74. McLean, JG; Kruse, P; Guo-Ping, J; Ruda, HE; Kummel, AC
      Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8 x 2)

      PHYSICAL REVIEW LETTERS
    75. Ahn, JR; Lee, SS; Kim, ND; Min, JH; Hwang, CG; Chung, JW
      Observation of disorder-induced 2D Mott-Hubbard states of the alkali-earthmetal (Mg,Ba)-adsorbed Si(111) surface

      PHYSICAL REVIEW LETTERS
    76. Ebert, P; Urban, K; Aballe, L; Chen, CH; Horn, K; Schwarz, G; Neugebauer, J; Scheffler, M
      Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110)

      PHYSICAL REVIEW LETTERS
    77. Petravic, M; Deenapanray, PNK; Comtet, G; Hellner, L; Dujardin, G; Usher, BF
      Selective photon-stimulated desorption of hydrogen from GaAs surfaces

      PHYSICAL REVIEW LETTERS
    78. Yang, WD; Wang, PN; Liu, ZP; Mi, L; Chen, SC; Li, FM
      Enhanced dissociation and ionization of N-2 in a pulsed discharge by adding NH3 or CH4 into nitrogen gas

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    79. Vladimirova, M; Pimpinelli, A; Videcoq, A
      A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation

      JOURNAL OF CRYSTAL GROWTH
    80. Buckland, JR; Allison, W
      Determination of the helium/Si(111)-(1x1)H potential

      JOURNAL OF CHEMICAL PHYSICS
    81. Beerbom, M; Henrion, O; Klein, A; Mayer, T; Jaegermann, W
      XPS analysis of wet chemical etching of GaAs(110) by Br-2-H2O: comparison of emersion and model experiments

      ELECTROCHIMICA ACTA
    82. Lita, B; Beck, M; Goldman, RS; Seryogin, GA; Nikishin, SA; Temkin, H
      Structural and compositional variations in ZnSnP2/GaAs superlattices

      APPLIED PHYSICS LETTERS
    83. Semmler, U; Ebert, P; Urban, K
      Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces

      APPLIED PHYSICS LETTERS
    84. Schaufuss, AG; Nesbitt, HW; Scaini, MJ; Hoechst, H; Bancroft, MG; Szargan, R
      Reactivity of surface sites on fractured arsenopyrite (FeAsS) toward oxygen

      AMERICAN MINERALOGIST
    85. Sinnott, SB; Wood, RF; Cho, JH; Zhang, ZY
      Quantum size effects in metallic overlayer epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. Bottomley, DJ
      Formation and shape of InAs nanoparticles on GaAs surfaces: Fundamental thermodynamics

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    87. Harada, T; Oda, Y; Motohisa, J; Fukui, T
      Novel nano-faceting structures grown on patterned vicinal (110) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    88. Tagami, K; Tsukada, M
      Simulated noncontact atomic force microscopy images of Si(001) surface with silicon tip

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    89. Janzen, O; Hahn, C; Monch, W
      Oxidation of GaN{0001}-1 x 1 surfaces at room temperature

      EUROPEAN PHYSICAL JOURNAL B
    90. Drotar, JT; Zhao, YP; Lu, TM; Wang, GC
      Numerical analysis of the noisy Kuramoto-Sivashinsky equation in 2+1 dimensions

      PHYSICAL REVIEW E
    91. De Renzi, V; Betti, MG; Corradini, V; Fantini, P; Martinelli, V; Mariani, C
      A high-resolution spectroscopy study on bidimensional ordered structures: the (1x1) and(1x2) phases of Bi/InAs(110)

      JOURNAL OF PHYSICS-CONDENSED MATTER
    92. Passeggi, MCG; Ferron, J
      The oxidation process of the K/GaAs(110) interface

      JOURNAL OF PHYSICS-CONDENSED MATTER
    93. Tom, HWK; Chang, YM; Kwak, H
      Coherent phonon and electron spectroscopy on surfaces using time-resolved second-harmonic generation

      APPLIED PHYSICS B-LASERS AND OPTICS
    94. Joyce, BA; Vvedensky, DD; Bell, GR; Belk, JG; Itoh, M; Jones, TS
      Nucleation and growth mechanisms during MBE of III-V compounds

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    95. Shim, BR; Torii, S; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, SY
      Transmission electron microscopy and photoluminescence characterization ofInGaAs strained quantum wires on GaAs vicinal (110) substrates

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    96. Ko, HC; Park, DH; Fujita, S
      CdSe/Zn1-xCdxSe quantum wire aarray structures fabricated by self-organization technique

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    97. Wichert, J; Weber, R; Kipp, L; Skibowski, M; Strasser, T; Starrost, F; Solterbeck, C; Schattke, W; Suski, T; Grzegory, I; Porowski, S
      Angle resolved photoemission spectroscopy of GaN (10(1)over-bar-0): Experiment and theory

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    98. Ascolani, H; Franco, N; Avila, J; Asensio, MC
      Direct atomic structure determination by scanned-energy photoelectron diffraction: Sb/GaAs(110)

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    99. Solterbeck, C; Tiedje, O; Strasser, T; Brodersen, S; Bodicker, A; Schattke, W; Bartos, I
      Optical potential and escape depth for electron scattering at very low energies

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    100. Teodorescu, CM; Martin, MG; Franco, N; Ascolani, H; Chrost, J; Avila, J; Asensio, MC
      Epitaxial growth of bcc Co films on Sb-passivated GaAs(110) substrates

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA


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Documento generato il 17/01/21 alle ore 18:24:59