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1. Ebert, P
   Atomic structure of point defects in compound semiconductor surfaces
   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
   
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2. Zvonareva, TK; Ivanov-Omskii, VI; Rozanov, VV; Sharonova, LV
   Scanning tunneling spectroscopy of a-C : H and a-C :(H, Cu) films preparedby magnetron sputtering
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3. Mankefors, S; Nilsson, PO
   Revised charge redistribution on semiconductor III-V (110) surfaces
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4. Wu, JX; Li, FQ; Zhu, JS; Wang, ZM; Ji, MR; Ma, MS
   The annealing behaviour of a Cs2O/GaAs(110) surface studied by electron spectroscopy
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5. Wijers, CMJ; de Boeij, PL
   Nonlocality and discrete cellular methods in optics
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6. Guasch, C; Doukkali, A; Bonnet, J
   Low temperature work function variations of the Au/GaSb (110) interface: Experimental results and theoretical model
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7. Strasser, T; Solterbeck, C; Schattke, W; Bartos, I; Cukr, M; Jiricek, P; Fadley, CS; Van Hove, MA
   A theoretical investigation of photoemission spectra from (GaAs)(2)(AlAs)(2) superlattices
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8. Videcoq, A; Pimpinelli, A; Vladimirova, M
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9. Pimpinelli, A; Videcoq, A; Vladimirova, M
   Kinetic surface patterning in two-particle models of epitaxial growth
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10. Kasai, S; Negoro, N; Hasegawa, H
    Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductors
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11. Tagami, K; Sasaki, N; Tsukada, M
    Simulated nc-AFM images of Si(001) surface with nanotube tip
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12. Inaoka, T
    Elementary excitations at doped polar semiconductor surfaces with carrier-depletion layers
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13. Nannarone, S; Pasquali, L
    Surface electronic properties by metastable deexcitation spectroscopy
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14. Maroutian, T; Douillard, L; Ernst, HJ
    Morphological instability of Cu vicinal surfaces during step-flow growth -art. no. 165401
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15. Gworek, CS; Phatak, P; Jonker, BT; Weber, ER; Newman, N
    Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights - art. no. 045322
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16. Kanasaki, J; Mikasa, N; Tanimura, K
    Laser-induced electronic desorption from InP surfaces studied by femtosecond nonresonant ionization spectroscopy - art. no. 035414
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17. Strasser, T; Solterbeck, C; Schattke, W; Bartos, I; Cukr, M; Jiricek, P; Fadley, CS; Van Hove, MA
    One-step photoemission calculations for ideal GaAs(001) and AlAs(001) surfaces and (GaAs)(m)(AlAs)(n) superlattices - art. no. 195321
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18. Okada, H; Fujimoto, Y; Endo, K; Hirose, K; Mori, Y
    Detailed analysis of scanning tunneling microscopy images of the Si(001) reconstructed surface with buckled dimers - art. no. 195324
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19. Inaoka, T
    Evolution of elementary excitations at a doped polar semiconductor surfacein a depletion-layer formation process - art. no. 165322
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20. Betti, MG; Corradini, V; Bertoni, G; Casarini, P; Mariani, C; Abramo, A
    Density of states of a two-dimensional electron gas at semiconductor surfaces - art. no. 155315
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21. Strasser, T; Solterbeck, C; Schattke, W; Bartos, I; Cukr, M; Jiricek, P
    Valence-band photoemission from GaAs(100)-c(4x4) - art. no. 085309
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22. Gebauer, J; Krause-Rehberg, R; Domke, C; Ebert, P; Urban, K; Staab, TEM
    Direct identification of As vacancies in GaAs using positron annihilation calibrated by scanning tunneling microscopy - art. no. 045203
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23. Tagami, K; Tsukada, M
    Tight-binding study of noncontact atomic force microscopy images of Si(001) surfaces
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24. Nagashima, A; Tazima, M; Nishimura, A; Takagi, Y; Yoshino, J
    Structural analysis of GaAs(001)-c(4 x 4) with LEED IV technique
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25. Inaoka, T
    Kinematic analysis of a dispersion region probed in reflection electron energy-loss spectroscopy
    SURFACE SCIENCE
    
    T. Inaoka, "Kinematic analysis of a dispersion region probed in reflection electron energy-loss spectroscopy", SURF SCI, 493(1-3), 2001, pp. 687-691
26. Calzolari, A; Pignedoli, CA; Di Felice, R; Bertoni, CM; Catellani, A
    Theory of Cs adsorption on InAs(110)
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27. Troger, H; Theis, W; Rieder, KH
    Surface phonons of GaP(110) and InAS(110)
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    H. Troger et al., "Surface phonons of GaP(110) and InAS(110)", SURF SCI, 490(3), 2001, pp. 251-255
28. Eggeling, J; Bell, GR; Jones, TS
    Resonant vibrational excitation of H-GaAs(001) in HREELS
    SURFACE SCIENCE
    
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29. Yamada, T; Fujii, J; Mizoguchi, T
    STM, STS, and local work function study of Cs/p-GaAs(110)
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30. Betti, MG; Corradini, V; Bertoni, G; Gardonio, S; Mariani, C; Gavioli, L; Belkhou, R; Taleb-Ibrahimi, A
    Adsorption sites at Cs nanowires grown on the InAs(110) surface
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31. Camillone, N; Khan, KA; Yarmoff, JA; Osgood, RM
    Surface-reconstruction-switched adsorbate photofragmentation dynamics - art. no. 056101
    PHYSICAL REVIEW LETTERS
    
    N. Camillone et al., "Surface-reconstruction-switched adsorbate photofragmentation dynamics - art. no. 056101", PHYS REV L, 8705(5), 2001, pp. 6101
32. Kim, TW; Lee, DU; Jung, M; Lee, JH; Kim, HJ; Choo, DC; Kim, JY; Yoon, YS
    Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures
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33. Williams, RS; Ashwin, MJ; Neave, JH; Jones, TS
    Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(001) substrates
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34. Herrmann, G; Okada, M; Murata, Y
    Scattering of hyperthermal molecular ions from Pt(111)
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    G. Herrmann et al., "Scattering of hyperthermal molecular ions from Pt(111)", J CHEM PHYS, 115(2), 2001, pp. 1009-1014
35. Semmler, U; Simon, M; Ebert, P; Urban, K
    Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects
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36. Pritchard, RE; Oulton, RF; Stavrinou, PN; Parry, G; Williams, RS; Ashwin, MJ; Neave, JH; Jones, TS
    Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates
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37. Ebert, P; Quadbeck, P; Urban, K; Henninger, B; Horn, K; Schwarz, G; Neugebauer, J; Scheffler, M
    Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors
    APPLIED PHYSICS LETTERS
    
    P. Ebert et al., "Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors", APPL PHYS L, 79(18), 2001, pp. 2877-2879
38. Ono, S; Takeuchi, M; Takahashi, T
    Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates
    APPLIED PHYSICS LETTERS
    
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39. Ebert, P; Domke, C; Urban, K
    Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy
    APPLIED PHYSICS LETTERS
    
    P. Ebert et al., "Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy", APPL PHYS L, 78(4), 2001, pp. 480-482
40. Hida, A; Mera, Y; Maeda, K
    Nanometer-scale measurements of photoabsorption spectra of individual defects in semiconductors
    APPLIED PHYSICS LETTERS
    
    A. Hida et al., "Nanometer-scale measurements of photoabsorption spectra of individual defects in semiconductors", APPL PHYS L, 78(21), 2001, pp. 3190-3192
41. McKay, HA; Feenstra, RM; Schmidtling, T; Pohl, UW
    Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy
    APPLIED PHYSICS LETTERS
    
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42. Su, WB; Chang, SH; Chang, CS; Chen, LJ; Tsong, TT
    Quantum size effects in low-temperature growth of Pb islands on Si(111)7 x7 surfaces
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43. Yoshita, M; Akiyama, H; Pfeiffer, LN; West, KW
    Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth
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44. Beerbom, M; Mayer, T; Jaegermann, W
    Synchrotron-induced photoemission of emersed GaAs electrodes after electrochemical etching in Br-2/H2O solutions
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45. Grabowski, SP; Nienhaus, H; Monch, W
    HREELS investigation of hydrogenated and deuterated GaN{0001} surfaces
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46. Crljen, Z
    Optical spectroscopy of negative-U centers
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47. Gay, SCA; Srivastava, GP
    Ab initio investigation of Bi-covered GaSb(110) surfaces
    PHYSICAL REVIEW B
    
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48. Oscarsson, H; He, ZQ; Ilver, L; Kanski, J; Mankefors, S; Nilsson, PO; Karlsson, UO
    Interaction between As and InP(110) studied by photoemission
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49. de la Broise, X; Delerue, C; Lannoo, M; Grandidier, B; Stievenard, D
    Theory of scanning tunneling microscopy of defects on semiconductor surfaces
    PHYSICAL REVIEW B
    
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50. Wang, WK; Simpson, WC; Yarmoff, JA
    Reactions of I-2 and Cl-2 with In- and As-terminated InAs(001)
    PHYSICAL REVIEW B
    
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51. Park, KH; Ha, JS; Yun, WS; Shin, M; Ko, YJ
    Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces
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52. Davydov, SY
    Metal-semiconductor transitions induced by adsorption of alkali metals on the Si(001) surface
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53. Ahn, JR; Kim, HW; Lee, KD; Chung, JW
    Physical properties of the Ba-adsorbed Si(111) surface at elevated temperatures
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54. Halaoui, LI; Wells, RL; Coury, LA
    STM and TS study of InAs quantum dots immobilized on Au and Pt surfaces
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55. Lin, G; Zhao, TX; Liu, HT; Yang, HW; Ji, MR
    Photoemission studies of K-promoted oxidation of the GaAs(110) surface
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56. Morgenstern, M; Haude, D; Gudmundsson, V; Wittneven, C; Dombrowski, R; Steinebach, C; Wiesendanger, R
    Low temperature scanning tunneling spectroscopy on InAs(110)
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57. Teodorescu, CM; Chevrier, F; Richter, C; Ilakovac, V; Heckmann, O; Lechevalier, L; Brochier, R; Johnson, RL; Hricovini, K
    Structure of Fe layers grown on InAs(100)
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58. Aristov, VY; Zhilin, VM; Grupp, C; Taleb-Ibrahimi, A; Kim, HJ; Mangat, PS; Soukiassian, P; Le Lay, G
    Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
    APPLIED SURFACE SCIENCE
    
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59. Lee, G; Mai, H; Chizhov, I; Willis, RF
    STM study of the charged defects on the Ge(111)-c(2 x 8) surface and the effect of density of states on defect-induced perturbation
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60. Kim, TW; Lee, DU; Lee, JH; Yoon, YS; Lee, JY; Park, HL
    Surface and interface microstructural properties of Ru thin films grown onInSb (111) substrates at room temperature
    APPLIED SURFACE SCIENCE
    
    T.W. Kim et al., "Surface and interface microstructural properties of Ru thin films grown onInSb (111) substrates at room temperature", APPL SURF S, 161(3-4), 2000, pp. 452-458
61. Fritsch, J; Arnold, M; Schroder, U
    Ab initio calculation of the phonon dispersion of antimony-covered (110) surfaces of III-V compounds
    PHYSICAL REVIEW B
    
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62. Haase, G
    Surface photovoltage imaging for the study of local electronic structure at semiconductor surfaces
    INTERNATIONAL REVIEWS IN PHYSICAL CHEMISTRY
    
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63. Erkoc, S; Kokten, H
    Energetics of arsenic terminated GaAs(001) surfaces
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64. Schattke, W
    Electron scattering states for low-energy spectroscopies
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65. Lee, G; Mai, H; Chizhov, I; Willis, RF
    Charged defects on Ge(111)-c(2 x 8): characterization using STM
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66. Wang, WK; Qiu, SR; Corbitt, B; Riggs, ST; Yarmoff, JA
    Chemisorption of iodine on In- and Sb-terminated InSb(001)
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    W.K. Wang et al., "Chemisorption of iodine on In- and Sb-terminated InSb(001)", SURF SCI, 462(1-3), 2000, pp. 211-221
67. Khan, KA; Camillone, N; Yarmoff, JA; Osgood, RM
    Modification of the surface termination of GaAs(001) using photon-activated electron-transfer reactions
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    K.A. Khan et al., "Modification of the surface termination of GaAs(001) using photon-activated electron-transfer reactions", SURF SCI, 458(1-3), 2000, pp. 53-62
68. Tong, SY
    Why is the positron an ideal particle for studying surface structure?
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    S.Y. Tong, "Why is the positron an ideal particle for studying surface structure?", SURF SCI, 457(3), 2000, pp. L432-L436
69. Tutuncu, HM; Srivastava, GP
    Atomic geometry, electronic states and vibrational properties of the AlAs(110) surface
    SURFACE SCIENCE
    
    H.M. Tutuncu e G.P. Srivastava, "Atomic geometry, electronic states and vibrational properties of the AlAs(110) surface", SURF SCI, 457(1-2), 2000, pp. 211-218
70. Mariani, C
    A high-resolution photoemission study of confined metal systems on InAs(110)
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71. Betti, MG; Bertoni, G; Corradini, V; De Renzi, V; Mariani, C
    Metal-induced gap states at InAs(110) surface
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72. Camillone, N; Khan, KA; Osgood, RM
    The thermal chemistry of model organosulfur compounds on gallium arsenide (110)
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73. Modesti, S; Falasca, A; Polentarutti, M; Betti, MG; De Renzi, V; Mariani, C
    Evolution of one-dimensional Cs chains on InAs(110) as determined by scanning-tunneling microscopy and core-level spectroscopy
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    S. Modesti et al., "Evolution of one-dimensional Cs chains on InAs(110) as determined by scanning-tunneling microscopy and core-level spectroscopy", SURF SCI, 447(1-3), 2000, pp. 133-142
74. McLean, JG; Kruse, P; Guo-Ping, J; Ruda, HE; Kummel, AC
    Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8 x 2)
    PHYSICAL REVIEW LETTERS
    
    J.G. McLean et al., "Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8 x 2)", PHYS REV L, 85(7), 2000, pp. 1488-1491
75. Ahn, JR; Lee, SS; Kim, ND; Min, JH; Hwang, CG; Chung, JW
    Observation of disorder-induced 2D Mott-Hubbard states of the alkali-earthmetal (Mg,Ba)-adsorbed Si(111) surface
    PHYSICAL REVIEW LETTERS
    
    J.R. Ahn et al., "Observation of disorder-induced 2D Mott-Hubbard states of the alkali-earthmetal (Mg,Ba)-adsorbed Si(111) surface", PHYS REV L, 84(8), 2000, pp. 1748-1751
76. Ebert, P; Urban, K; Aballe, L; Chen, CH; Horn, K; Schwarz, G; Neugebauer, J; Scheffler, M
    Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110)
    PHYSICAL REVIEW LETTERS
    
    P. Ebert et al., "Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110)", PHYS REV L, 84(25), 2000, pp. 5816-5819
77. Petravic, M; Deenapanray, PNK; Comtet, G; Hellner, L; Dujardin, G; Usher, BF
    Selective photon-stimulated desorption of hydrogen from GaAs surfaces
    PHYSICAL REVIEW LETTERS
    
    M. Petravic et al., "Selective photon-stimulated desorption of hydrogen from GaAs surfaces", PHYS REV L, 84(10), 2000, pp. 2255-2258
78. Yang, WD; Wang, PN; Liu, ZP; Mi, L; Chen, SC; Li, FM
    Enhanced dissociation and ionization of N-2 in a pulsed discharge by adding NH3 or CH4 into nitrogen gas
    JOURNAL OF PHYSICS D-APPLIED PHYSICS
    
    W.D. Yang et al., "Enhanced dissociation and ionization of N-2 in a pulsed discharge by adding NH3 or CH4 into nitrogen gas", J PHYS D, 33(24), 2000, pp. 3223-3227
79. Vladimirova, M; Pimpinelli, A; Videcoq, A
    A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation
    JOURNAL OF CRYSTAL GROWTH
    
    M. Vladimirova et al., "A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation", J CRYST GR, 220(4), 2000, pp. 631-636
80. Buckland, JR; Allison, W
    Determination of the helium/Si(111)-(1x1)H potential
    JOURNAL OF CHEMICAL PHYSICS
    
    J.R. Buckland e W. Allison, "Determination of the helium/Si(111)-(1x1)H potential", J CHEM PHYS, 112(2), 2000, pp. 970-978
81. Beerbom, M; Henrion, O; Klein, A; Mayer, T; Jaegermann, W
    XPS analysis of wet chemical etching of GaAs(110) by Br-2-H2O: comparison of emersion and model experiments
    ELECTROCHIMICA ACTA
    
    M. Beerbom et al., "XPS analysis of wet chemical etching of GaAs(110) by Br-2-H2O: comparison of emersion and model experiments", ELECTR ACT, 45(28), 2000, pp. 4663-4672
82. Lita, B; Beck, M; Goldman, RS; Seryogin, GA; Nikishin, SA; Temkin, H
    Structural and compositional variations in ZnSnP2/GaAs superlattices
    APPLIED PHYSICS LETTERS
    
    B. Lita et al., "Structural and compositional variations in ZnSnP2/GaAs superlattices", APPL PHYS L, 77(18), 2000, pp. 2894-2896
83. Semmler, U; Ebert, P; Urban, K
    Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces
    APPLIED PHYSICS LETTERS
    
    U. Semmler et al., "Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces", APPL PHYS L, 77(1), 2000, pp. 61-63
84. Schaufuss, AG; Nesbitt, HW; Scaini, MJ; Hoechst, H; Bancroft, MG; Szargan, R
    Reactivity of surface sites on fractured arsenopyrite (FeAsS) toward oxygen
    AMERICAN MINERALOGIST
    
    A.G. Schaufuss et al., "Reactivity of surface sites on fractured arsenopyrite (FeAsS) toward oxygen", AM MINERAL, 85(11-12), 2000, pp. 1754-1766
85. Sinnott, SB; Wood, RF; Cho, JH; Zhang, ZY
    Quantum size effects in metallic overlayer epitaxy
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    
    S.B. Sinnott et al., "Quantum size effects in metallic overlayer epitaxy", JPN J A P 1, 39(7B), 2000, pp. 4302-4306
86. Bottomley, DJ
    Formation and shape of InAs nanoparticles on GaAs surfaces: Fundamental thermodynamics
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    
    D.J. Bottomley, "Formation and shape of InAs nanoparticles on GaAs surfaces: Fundamental thermodynamics", JPN J A P 1, 39(7B), 2000, pp. 4604-4608
87. Harada, T; Oda, Y; Motohisa, J; Fukui, T
    Novel nano-faceting structures grown on patterned vicinal (110) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE)
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    T. Harada et al., "Novel nano-faceting structures grown on patterned vicinal (110) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE)", JPN J A P 1, 39(12B), 2000, pp. 7090-7092
88. Tagami, K; Tsukada, M
    Simulated noncontact atomic force microscopy images of Si(001) surface with silicon tip
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    
    K. Tagami e M. Tsukada, "Simulated noncontact atomic force microscopy images of Si(001) surface with silicon tip", JPN J A P 1, 39(10), 2000, pp. 6025-6028
89. Janzen, O; Hahn, C; Monch, W
    Oxidation of GaN{0001}-1 x 1 surfaces at room temperature
    EUROPEAN PHYSICAL JOURNAL B
    
    O. Janzen et al., "Oxidation of GaN{0001}-1 x 1 surfaces at room temperature", EUR PHY J B, 9(2), 1999, pp. 315-321
90. Drotar, JT; Zhao, YP; Lu, TM; Wang, GC
    Numerical analysis of the noisy Kuramoto-Sivashinsky equation in 2+1 dimensions
    PHYSICAL REVIEW E
    
    J.T. Drotar et al., "Numerical analysis of the noisy Kuramoto-Sivashinsky equation in 2+1 dimensions", PHYS REV E, 59(1), 1999, pp. 177-185
91. De Renzi, V; Betti, MG; Corradini, V; Fantini, P; Martinelli, V; Mariani, C
    A high-resolution spectroscopy study on bidimensional ordered structures: the (1x1) and(1x2) phases of Bi/InAs(110)
    JOURNAL OF PHYSICS-CONDENSED MATTER
    
    V. De Renzi et al., "A high-resolution spectroscopy study on bidimensional ordered structures: the (1x1) and(1x2) phases of Bi/InAs(110)", J PHYS-COND, 11(39), 1999, pp. 7447-7461
92. Passeggi, MCG; Ferron, J
    The oxidation process of the K/GaAs(110) interface
    JOURNAL OF PHYSICS-CONDENSED MATTER
    
    M.C.G. Passeggi e J. Ferron, "The oxidation process of the K/GaAs(110) interface", J PHYS-COND, 11(35), 1999, pp. 6725-6735
93. Tom, HWK; Chang, YM; Kwak, H
    Coherent phonon and electron spectroscopy on surfaces using time-resolved second-harmonic generation
    APPLIED PHYSICS B-LASERS AND OPTICS
    
    H.W.K. Tom et al., "Coherent phonon and electron spectroscopy on surfaces using time-resolved second-harmonic generation", APP PHYS B, 68(3), 1999, pp. 305-313
94. Joyce, BA; Vvedensky, DD; Bell, GR; Belk, JG; Itoh, M; Jones, TS
    Nucleation and growth mechanisms during MBE of III-V compounds
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
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95. Shim, BR; Torii, S; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, SY
    Transmission electron microscopy and photoluminescence characterization ofInGaAs strained quantum wires on GaAs vicinal (110) substrates
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    
    B.R. Shim et al., "Transmission electron microscopy and photoluminescence characterization ofInGaAs strained quantum wires on GaAs vicinal (110) substrates", J KOR PHYS, 35, 1999, pp. S599-S603
96. Ko, HC; Park, DH; Fujita, S
    CdSe/Zn1-xCdxSe quantum wire aarray structures fabricated by self-organization technique
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    
    H.C. Ko et al., "CdSe/Zn1-xCdxSe quantum wire aarray structures fabricated by self-organization technique", J KOR PHYS, 34, 1999, pp. S488-S491
97. Wichert, J; Weber, R; Kipp, L; Skibowski, M; Strasser, T; Starrost, F; Solterbeck, C; Schattke, W; Suski, T; Grzegory, I; Porowski, S
    Angle resolved photoemission spectroscopy of GaN (10(1)over-bar-0): Experiment and theory
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    
    J. Wichert et al., "Angle resolved photoemission spectroscopy of GaN (10(1)over-bar-0): Experiment and theory", PHYS ST S-B, 215(1), 1999, pp. 751-755
98. Ascolani, H; Franco, N; Avila, J; Asensio, MC
    Direct atomic structure determination by scanned-energy photoelectron diffraction: Sb/GaAs(110)
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    
    H. Ascolani et al., "Direct atomic structure determination by scanned-energy photoelectron diffraction: Sb/GaAs(110)", J ELEC SPEC, 103, 1999, pp. 321-326
99. Solterbeck, C; Tiedje, O; Strasser, T; Brodersen, S; Bodicker, A; Schattke, W; Bartos, I
    Optical potential and escape depth for electron scattering at very low energies
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    
    C. Solterbeck et al., "Optical potential and escape depth for electron scattering at very low energies", J ELEC SPEC, 103, 1999, pp. 473-478
100. Teodorescu, CM; Martin, MG; Franco, N; Ascolani, H; Chrost, J; Avila, J; Asensio, MC
     Epitaxial growth of bcc Co films on Sb-passivated GaAs(110) substrates
     JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
     
     C.M. Teodorescu et al., "Epitaxial growth of bcc Co films on Sb-passivated GaAs(110) substrates", J ELEC SPEC, 103, 1999, pp. 493-499