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La ricerca find articoli where soggetti phrase all words 'GAAS(100)' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 798 riferimenti
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    1. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part I - Island density

      JOURNAL OF CRYSTAL GROWTH
    2. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part II - Island size

      JOURNAL OF CRYSTAL GROWTH
    3. Lebedev, MV
      Sulfur adsorption at GaAs: Role of the adsorbate solvation and reactivity in modification of semiconductor surface electronic structure

      JOURNAL OF PHYSICAL CHEMISTRY B
    4. Esser, N; Schmidt, WG; Cobet, C; Fleischer, K; Shkrebtii, AI; Fimland, BO; Richter, W
      Atomic structure and optical anisotropy of III-V(001) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    5. Hingerl, K; Balderas-Navarro, RE; Bonanni, A; Stifter, D
      Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    6. Nath, KG; Maeda, F; Suzuki, S; Watanabe, Y
      Surfactant-mediated control of surface morphology for Co epitaxial film onS-passivated semiconducting substrate

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Berkovits, VL; Gordeeva, AB; Kosobukin, VA
      Local-field effects in reflectance anisotropy spectra of the (001) surfaceof gallium arsenide

      PHYSICS OF THE SOLID STATE
    8. Lebedev, MV
      Role of sulfide ion solvation in the modification of GaAs surface electronic structure

      SEMICONDUCTORS
    9. Benemanskaya, GV; Daineka, DV; Frank-Kamenetskaya, GE
      The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    10. Zhu, CG; Xu, PS; Lu, ED; Xu, FQ; Pan, HB
      Influence of CH3CSNH2 passivation on interface diffusion between ferromagnetic metals and GaAs

      ACTA PHYSICA SINICA
    11. Arakawa, Y; Someya, T; Tachibana, K
      Progress in growth and physics of nitride-based quantum dots

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    12. LaBella, VP; Ding, Z; Bullock, DW; Emery, C; Thibado, PM
      A union of the real-space and reciprocal-space view of the GaAs(001) surface

      INTERNATIONAL JOURNAL OF MODERN PHYSICS B
    13. Surdu-Bob, CC; Saied, SO; Sullivan, JL
      An X-ray photoelectron spectroscopy study of the oxides of GaAs

      APPLIED SURFACE SCIENCE
    14. Hu, MH; Noda, S; Okubo, T; Yamaguchi, Y; Komiyama, H
      Structure and morphology of self-assembled 3-mercaptopropyltrimethoxysilane layers on silicon oxide

      APPLIED SURFACE SCIENCE
    15. Park, S; Kampen, TU; Braun, W; Zahn, DRT
      Photoemission study of Mg/PTCDA/Se-GaAs Schottky contacts

      APPLIED SURFACE SCIENCE
    16. Li, YG; Wee, ATS; Huan, CHA; Zheng, JC
      Ion-induced nitridation of GaAs(100) surface

      APPLIED SURFACE SCIENCE
    17. Xu, PS; Zhang, FP; Lu, ED; Xu, FQ; Pan, HB; Zhang, XY
      The progress of SR study on the passivation of semiconductor surface in NSRL

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    18. Hulluvarad, SS; Naddaf, M; Bhoraskar, SV
      Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    19. Wixom, RR; Stringfellow, GB; Modine, NA
      Theory of Sb-induced triple-period ordering in GaInP - art. no. 201322

      PHYSICAL REVIEW B
    20. Goletti, C; Arciprete, F; Almaviva, S; Chiaradia, P; Esser, N; Richter, W
      Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy - art. no. 193301

      PHYSICAL REVIEW B
    21. Berkovits, VL; Witkowski, N; Borensztein, Y; Paget, D
      Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations - art. no. 121314

      PHYSICAL REVIEW B
    22. Itoh, M; Ohno, T
      Atomic-scale Monte Carlo study of step-flow growth modes on GaAs(001)-(2X4) - art. no. 125301

      PHYSICAL REVIEW B
    23. Kegel, R; Metzger, TH; Lorke, A; Peisl, J; Stangl, J; Bauer, G; Nordlund, K; Schoenfeld, WV; Petroff, PM
      Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction - art. no. 035318

      PHYSICAL REVIEW B
    24. Jach, T; Landree, E
      Grazing-incidence x-ray photoemission spectroscopy and the accuracy of thickness measurements of CMOS gate dielectrics

      SURFACE AND INTERFACE ANALYSIS
    25. Itoh, M
      Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces

      PROGRESS IN SURFACE SCIENCE
    26. Hullavarad, SS; Nikesh, VV; Sainkar, SR; Ganesan, V; Mahamuni, S; Bhoraskar, SV
      Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs

      THIN SOLID FILMS
    27. Taguchi, A; Shiraishi, K; Ito, T; Kangawa, Y
      Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(111)A surface

      SURFACE SCIENCE
    28. Yong, K; Ekerdt, JG
      Surface decomposition of triethylindium on InSb(100)

      SURFACE SCIENCE
    29. Palomares, FJ; Alonso, M; Jimenez, I; Avila, J; Sacedon, JL; Soria, F
      Electron-beam-induced reactions at O-2/GaAs(100) interfaces

      SURFACE SCIENCE
    30. Preobrajenski, AB; Gebhardt, RK; Uhlig, I; Chasse, T
      Two types of sulfur-induced (2 x 1) reconstructions on InP(001)

      SURFACE SCIENCE
    31. Sakai, M; Shibata, H; Shinohara, M
      Influence of a surface on the Franz-Keldysh effect in n- and p-type GaAs epitaxial layers

      JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
    32. Camillone, N; Khan, KA; Yarmoff, JA; Osgood, RM
      Surface-reconstruction-switched adsorbate photofragmentation dynamics - art. no. 056101

      PHYSICAL REVIEW LETTERS
    33. Feng, PX; Riley, JD; Leckey, RCG; Pigram, PJ; Seyller, T; Ley, L
      Surface, interface and bulk properties of GaAs(111)B treated by Se layers

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    34. Liu, HY; Xu, B; Ding, D; Chen, YH; Zhang, JF; Wu, J; Wang, ZG
      Size and shape evolution of self-assembled coherent InAs/GaAs quantum dotsinfluenced by seed layer

      JOURNAL OF CRYSTAL GROWTH
    35. Yi, SI; Kruse, P; Hale, M; Kummel, AC
      Adsorption of atomic oxygen on GaAs(001)-(2x4) and the resulting surface structures

      JOURNAL OF CHEMICAL PHYSICS
    36. Yu, YM; Nam, S; Lee, KS; Choi, YD; O, B
      Photoluminescence characteristics of ZnTe epilayers

      JOURNAL OF APPLIED PHYSICS
    37. Schmuki, P; Erickson, LE; Champion, G
      Selective Electrodeposition of micropatterns on predefined surface defectson p-Si(100)

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    38. Vereecken, PM; Searson, PC
      Electrochemical deposition of Bi on GaAs(100)

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    39. Ohashi, M; Ozeki, M
      Dynamical behaviors of GaCl on the GaAs(001) 4x6 surface by pulsed molecular beam scattering

      APPLIED PHYSICS LETTERS
    40. Kim, ET; Chen, ZH; Madhukar, A
      Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells

      APPLIED PHYSICS LETTERS
    41. Ma, WQ; Notzel, R; Trampert, A; Ramsteiner, M; Zhu, HJ; Schonherr, HP; Ploog, KH
      Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

      APPLIED PHYSICS LETTERS
    42. Ohtake, A; Ozeki, M
      In situ observation of surface processes in InAs/GaAs(001) heteroepitaxy: The role of As on the growth mode

      APPLIED PHYSICS LETTERS
    43. Su, XT; Kalia, RK; Nakano, A; Vashishta, P; Madhukar, A
      Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas

      APPLIED PHYSICS LETTERS
    44. Gleim, T; Heske, C; Umbach, E; Schumacher, C; Faschinger, W; Ammon, C; Probst, M; Steinruck, HP
      Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer

      APPLIED PHYSICS LETTERS
    45. Klotzkin, D; Bhattacharya, P
      Bringing quantum dots up to speed

      IEEE CIRCUITS & DEVICES
    46. Fu, Q; Li, L; Li, CH; Begarney, MJ; Law, DC; Hicks, RF
      Mechanism of arsine adsorption on the gallium-rich GaAs(001)-(4 x 2) surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    47. Koinuma, M; Matsumoto, Y; Sumida, T; Domen, K
      Atomic force microscopy study of layered titanate HxTi(2-x/4)square O-x/4(4)center dot H2O films

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    48. Goletti, C; Springer, C; Resch-Esser, U; Esser, N; Richter, W; Fimland, BO
      Optical characterization of indium-terminated GaAs(001) surfaces

      PHYSICAL REVIEW B
    49. Wang, WK; Simpson, WC; Yarmoff, JA
      Reactions of I-2 and Cl-2 with In- and As-terminated InAs(001)

      PHYSICAL REVIEW B
    50. Fu, Q; Li, L; Hicks, RF
      Ab initio cluster calculations of hydrogenated GaAs(001) surfaces

      PHYSICAL REVIEW B
    51. Selen, LJM; van IJzendoorn, LJ; de Voigt, MJA; Koenraad, PM
      Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments

      PHYSICAL REVIEW B
    52. Tachibana, K; Someya, T; Arakawa, Y
      Growth of InGaN self-assembled quantum dots and their application to lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    53. Kampen, TU; Rossow, U; Schumann, M; Park, S; Zahn, DRT
      Reflectance anisotropy spectroscopy of the growth of perylene-3,4,9,10-tetracarboxylic dianhydride on chalcogen passivated GaAs(001) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    54. Zhang, DH; Wang, XZ; Zheng, HQ; Shi, W; Yoon, SF; Kam, CH
      GaInAsP grown on GaAs substrate by solid source molecular beam epitaxy with a valve phosphorous cracker cell

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    55. Petitprez, E; Moshegov, NT; Marega, E; Mazel, A; Dorignac, D; Fourmeaux, R
      Strain relaxation-induced modifications of the optical properties of self-assembled InAs quantum dot superlattices

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    56. Zhou, W; Xu, B; Xu, HZ; Jiang, WH; Liu, FQ; Gong, Q; Ding, D; Liang, JB; Wang, ZG; Zhu, ZM; Li, GH
      Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    57. Bakhtizin, RZ; Hasegawa, Y; Xue, QK; Sakurai, T
      Atomic structures of two-dimensional strained InAs epitaxial layers on a GaAs(001) surface: in situ observation of quantum dot growth

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    58. Li, YF; Liu, FQ; Xu, B; Lin, F; Wu, J; Jiang, WH; Ding, D; Wang, ZG
      InAs self-assembled nanostructures grown on InP(001)

      CHINESE PHYSICS
    59. Chen, YD; Liu, XQ; Lu, W; Qiao, YM; Wang, XR
      Study of the GaAs, AlGaAs MBE growth dynamics

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    60. Zhang, FP; Guo, HZ; Xu, PS; Zhu, CG; Lu, ED; Zhang, XY; Liang, RY
      Interface formation between Co with S-passivated GaAs(100)

      ACTA PHYSICA SINICA
    61. Morrice, DE; Farrell, T; Joyce, TB; Chalker, PR
      Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy

      DIAMOND AND RELATED MATERIALS
    62. Meguro, T; Sakamoto, M; Takai, H; Aoyagi, Y
      Multiply-charged ion beam induced dry etching of semiconductor materials

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    63. McDaniel, AH; Allendorf, MD
      Autocatalytic behavior of trimethylindium during thermal decomposition

      CHEMISTRY OF MATERIALS
    64. Jacobi, K; Platen, J; Setzer, C
      Structure and surface core-level shifts of GaAs surfaces prepared by molecular-beam epitaxy

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    65. Chang, YM; Xu, L; Tom, HWK
      Coherent phonon spectroscopy of GaAs surfaces using time-resolved second-harmonic generation

      CHEMICAL PHYSICS
    66. Sallet, V; Lusson, A; Tromson-Carli, A; Riviere, A; Riviere, JP; Rommeluere, JF; Marfaing, Y
      Optical properties of CdS layers grown by MOVPE on (211)B and (100) GaAs

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    67. Wang, HL; Feng, SL; Yang, FH; Sun, BQ; Jiang, DS
      Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots

      CHINESE PHYSICS LETTERS
    68. Li, L
      Site-specific surface chemistry of GaAs (001)

      SURFACE REVIEW AND LETTERS
    69. Pincik, E; Jergel, M; Kucera, M; van Swaaij, RACMM; Ivanco, J; Senderak, R; Zeman, M; Mullerova, J; Brunel, M
      Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces

      APPLIED SURFACE SCIENCE
    70. Park, S; Querner, T; Kampen, TU; Braun, W; Zahn, DRT
      The interface formation of PTCDA on Se-modified GaAs(100) surfaces

      APPLIED SURFACE SCIENCE
    71. Suzuki, Y; Kumano, H; Tomota, W; Sanada, N; Fukuda, Y
      Nitridation of an InP(001) surface by nitrogen ion beams

      APPLIED SURFACE SCIENCE
    72. Toyoda, K; Hiraoka, YS; Naritsuka, S; Nishinaga, T
      Ab initio calculations on the dissociative reaction of As-4 molecules

      APPLIED SURFACE SCIENCE
    73. Williams, MD; Greene, AL; Daniels-Race, T; Lum, RM
      Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organicchemical vapor deposition

      APPLIED SURFACE SCIENCE
    74. Marquez, J; Geelhaar, L; Jacobi, K
      Atomic structure of the GaAs((311)over-bar)B(8X1) surface reconstruction

      PHYSICAL REVIEW B
    75. Schmidt, WG; Mirbt, S; Bechstedt, F
      Surface phase diagram of (2X4) and (4X2) reconstructions of GaAs(001)

      PHYSICAL REVIEW B
    76. Begarney, MJ; Li, L; Li, CH; Law, DC; Fu, Q; Hicks, RF
      Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001)

      PHYSICAL REVIEW B
    77. Taguchi, A; Shiraishi, K; Ito, T
      First-principles study of the elemental process of epitaxial growth on a GaAs(111)A surface

      PHYSICAL REVIEW B
    78. Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP
      Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates

      SURFACE AND INTERFACE ANALYSIS
    79. Islam, ABMO; Tambo, T; Tatsuyama, C
      Passivation of GaAs surface by GaS

      VACUUM
    80. Niraula, M; Mochizuki, D; Aoki, T; Nakanishi, Y; Hatanaka, Y
      Low-temperature growth and n-type doping of CdTe by the remote-plasma-assisted metalorganic chemical vapor deposition method

      VACUUM
    81. Zahn, DRT; Kampen, TU; Hohenecker, S; Braun, W
      GaAs surface passivation by ultra-high vacuum deposition of chalcogen atoms

      VACUUM
    82. Zhang, XY; Zhang, FP; Lu, ED; Xu, PS
      A novel sulfur-passivation method and magnetic overlayers on passivated III-V semiconductor surface

      VACUUM
    83. Szuber, J
      New procedure for determination of the interface Fermi level position for atomic hydrogen cleaned GaAs(100) surface using photoemission

      VACUUM
    84. Monteverde, F; Michel, A; Kherici, A; Eymery, JP
      A study of structure and mixing at the interface between Fe and AlGaAs (100)

      THIN SOLID FILMS
    85. Jin, G; Liu, JL; Luo, YH; Wang, KL
      Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates

      THIN SOLID FILMS
    86. Hansen, L; Bensing, F; Waag, A
      InAs quantum dots embedded in silicon

      THIN SOLID FILMS
    87. Szymonski, M; Korecki, P; Kolodziej, J; Czuba, P; Piatkowski, P
      Structure and electronic properties of ionic nano-layers MBE-grown on III-V semiconductors

      THIN SOLID FILMS
    88. Pelzel, RI; Nosho, BZ; Fimland, BO; Weinberg, WH
      Adsorption of [(Bu-t)GaS](4) on the GaAs(001)-(4 x 2) surface

      SURFACE SCIENCE
    89. Tengelin-Nilsson, M; Ilver, L; Kanski, J
      Photoemission and low-energy electron diffraction studies of 3,4,9,10-perylene tetracarboxylic dianhydride layers on Si(111): H

      SURFACE SCIENCE
    90. More, S; Tanaka, S; Tanaka, S; Fujii, Y; Kamada, M
      Coadsorption of Cs and O on GaAs: formation of negative electron affinity surfaces at different temperatures

      SURFACE SCIENCE
    91. Yong, K; Ekerdt, JG
      Surface reaction of triethylgallium and triethylantimony on GaSb(100)-(1 x3)

      SURFACE SCIENCE
    92. Ozeki, M; Cui, J; Ohashi, M
      Dynamical behavior of tertiarybutylarsine at GaAs(001)

      SURFACE SCIENCE
    93. Kegel, I; Metzger, TH; Lorke, A; Peisl, J; Stangl, J; Bauer, G; Garcia, JM; Petroff, PM
      Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

      PHYSICAL REVIEW LETTERS
    94. Schmuki, P; Erickson, LE
      Selective high-resolution electrodeposition on semiconductor defect patterns

      PHYSICAL REVIEW LETTERS
    95. Bracker, AS; Yang, MJ; Bennett, BR; Culbertson, JC; Moore, WJ
      Surface reconstruction phase diagrams for InAs, AlSb, and GaSb

      JOURNAL OF CRYSTAL GROWTH
    96. Sallet, V; Lusson, A; Rommeluere, M; Gorochov, O
      MOCVD growth and characterization of ZnS and Zn1-xMgxS alloys

      JOURNAL OF CRYSTAL GROWTH
    97. Shi, BQ; Tu, CW
      A reaction model for chemical beam epitaxy with triethylgallium and tris(dimethylamino)arsenic

      JOURNAL OF CRYSTAL GROWTH
    98. Mizeikis, V; Jarasiunas, K; Lovergine, N; Prete, P
      Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures

      JOURNAL OF CRYSTAL GROWTH
    99. Abe, H; Kanemaru, M; Egawa, T; Nabetani, Y; Kato, T; Matsumoto, T
      RHEED study of atomic steps on ZnSe surface growing on vicinal GaAs substrates

      JOURNAL OF CRYSTAL GROWTH
    100. Oyama, Y; Nishizawa, J; Seo, K; Suto, K
      X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grownby intermittent injection of TEGa/AsH3 in ultra high vacuum

      JOURNAL OF CRYSTAL GROWTH


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Documento generato il 03/06/20 alle ore 22:09:11