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La ricerca find articoli where soggetti phrase all words 'GAAS(001)' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 878 riferimenti
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    1. Lebedev, MV
      Sulfur adsorption at GaAs: Role of the adsorbate solvation and reactivity in modification of semiconductor surface electronic structure

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. Jenichen, A; Engler, C
      Etching of GaAs(100) surfaces by halogen molecules: Density functional calculations on the different mechanisms

      JOURNAL OF PHYSICAL CHEMISTRY B
    3. Bournel, A; Delmouly, V; Dollfus, P; Tremblay, G; Hesto, P
      Theoretical and experimental considerations on the spin field effect transistor

      PHYSICA E
    4. Dong, JW; Lu, J; Xie, JQ; Chen, LC; James, RD; McKernan, S; Palmstrom, CJ
      MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs

      PHYSICA E
    5. Akinaga, H; Mizuguchi, M; Manago, T; Sato, T; Kuramochi, H; Ono, K; Ofuchi, H; Oshima, M
      Magnetoresistive switch effect in MnSb granular films grown on sulfur-passivated GaAs: more-than 10 000% magnetoresistance effect at room-temperature

      PHYSICA E
    6. Hicks, RF; Fu, Q; Li, L; Visbeck, SB; Sun, Y; Li, CH; Law, DC
      The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors

      JOURNAL DE PHYSIQUE IV
    7. Esser, N; Schmidt, WG; Cobet, C; Fleischer, K; Shkrebtii, AI; Fimland, BO; Richter, W
      Atomic structure and optical anisotropy of III-V(001) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    8. Hingerl, K; Balderas-Navarro, RE; Bonanni, A; Stifter, D
      Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    9. Nath, KG; Maeda, F; Suzuki, S; Watanabe, Y
      Surfactant-mediated control of surface morphology for Co epitaxial film onS-passivated semiconducting substrate

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    10. Berkovits, VL; Gordeeva, AB; Kosobukin, VA
      Local-field effects in reflectance anisotropy spectra of the (001) surfaceof gallium arsenide

      PHYSICS OF THE SOLID STATE
    11. Lebedev, MV
      Role of sulfide ion solvation in the modification of GaAs surface electronic structure

      SEMICONDUCTORS
    12. Wang, LG; Kratzer, P; Scheffler, M; Liu, QKK
      Island dissolution during capping layer growth interruption

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    13. Stringfellow, GB
      Fundamental aspects of organometallic vapor phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    14. Oshima, M; Mano, T; Mizuguchi, M; Ono, K; Fujioka, H; Akinaga, H; Koguchi, N
      Properties of semiconductor quantum dots and magnetic nanocrystals grown by molecular beam epitaxy

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    15. Mano, T; Tsukamoto, S; Koguchi, N; Fujioka, H; Oshima, M; Lee, CD; Leem, JY; Lee, HJ; Noh, SK
      Transmission electron microscope study of InGaAs quantum dots fabricated by SPEED method

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    16. Jin, XF
      Interfaces between magnetic thin films and GaAs substrate

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    17. Cordier, Y; Miska, P; Ferre, D
      Effects of mismatch strain and alloy composition on the formation of InAs islands on InAlAs templates

      JOURNAL OF ELECTRONIC MATERIALS
    18. Heinrich, B; Monchesky, T; Urban, R
      Role of interfaces in higher order angular terms of magnetic anisotropies:ultrathin film structures

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    19. Wojcik, M; Jedryka, E; Nadolski, S; Liu, Z; Dessein, K; Borghs, G; De Boeck, J
      Microscopic magnetism in MnAs/GaAs heterostructures studied by NMR

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    20. Xu, YB; Tselepi, M; Dudzik, E; Guertler, CM; Vaz, CAF; Wastlbauer, G; Freeland, DJ; Bland, JAC; van der Laan, G
      Spin and orbital magnetic moments of ultrathin Fe films on GaAs(100) studied by X-ray magnetic circular dichroism

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    21. Nemcsics, A; Riesz, F
      Influence of lattice mismatch and growth rate on the decay of RHEED oscillation in the case of InGaAs/GaAs growth

      CRYSTAL RESEARCH AND TECHNOLOGY
    22. Fouquet, P; Witte, G
      Metallization and demetallization of clean and oxygen-covered ultrathin alkali metal films on GaAs(100)

      APPLIED SURFACE SCIENCE
    23. Hecht, JD; Frost, F; Chasse, T; Hirsch, D; Neumann, H; Schindler, A; Bigl, F
      In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

      APPLIED SURFACE SCIENCE
    24. Kasai, S; Negoro, N; Hasegawa, H
      Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductors

      APPLIED SURFACE SCIENCE
    25. Kuwabara, H; Unno, A; Kouga, K; Watanabe, T; Tomoda, W; Nakanishi, Y; Tatsuoka, H
      Growth of CdTe islands on ZnTe by hot-wall epitaxy

      APPLIED SURFACE SCIENCE
    26. Hingerl, K; Balderas-Navarro, RE; Bonanni, A; Tichopadek, P; Schmidt, WG
      On the origin of resonance features in reflectance difference data of silicon

      APPLIED SURFACE SCIENCE
    27. Monteverde, F; Michel, A; Eymery, JP; Desoyer, JC
      On the growth of Fe2As grains at the interface of the Fe/AlxGa1-xAs (x=0.25) system

      APPLIED SURFACE SCIENCE
    28. Yoneta, M; Ohishi, M; Saito, H
      Thermal stability of Li-related 1D defects in ZnSe : Li/GaAs grown by MBE

      APPLIED SURFACE SCIENCE
    29. Wixom, RR; Stringfellow, GB; Modine, NA
      Theory of Sb-induced triple-period ordering in GaInP - art. no. 201322

      PHYSICAL REVIEW B
    30. Goletti, C; Arciprete, F; Almaviva, S; Chiaradia, P; Esser, N; Richter, W
      Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy - art. no. 193301

      PHYSICAL REVIEW B
    31. Heyn, C
      Critical coverage for strain-induced formation of InAs quantum dots - art.no. 165306

      PHYSICAL REVIEW B
    32. Hanada, T; Koo, BH; Totsuka, H; Yao, T
      Anisotropic shape of self-assembled InAs quantum dots: Refraction effect on spot shape of reflection high-energy electron diffraction - art. no. 165307

      PHYSICAL REVIEW B
    33. Lastras-Martinez, LF; Lastras-Martinez, A
      Reflectance-difference spectroscopy of semi-insulating GaAs(110) around the fundamental gap - art. no. 085309

      PHYSICAL REVIEW B
    34. Penev, E; Kratzer, P; Scheffler, M
      Effect of strain on surface diffusion in semiconductor heteroepitaxy - art. no. 085401

      PHYSICAL REVIEW B
    35. Kumpf, C; Smilgies, D; Landemark, E; Nielsen, M; Feidenhans'l, R; Bunk, O; Zeysing, JH; Su, Y; Johnson, RL; Cao, L; Zegenhagen, J; Fimland, BO; Marks, LD; Ellis, D
      Structure of metal-rich (001) surfaces of III-V compound semiconductors - art. no. 075307

      PHYSICAL REVIEW B
    36. Ohtake, A; Nakamura, J; Komura, T; Hanada, T; Yao, T; Kuramochi, H; Ozeki, M
      Surface structures of GaAs{111}A,B-(2X2) - art. no. 045318

      PHYSICAL REVIEW B
    37. Rubini, S; Pelucchi, E; Lazzarino, M; Kumar, D; Franciosi, A; Berthod, C; Binggeli, N; Baldereschi, A
      Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) - art. no. 235307

      PHYSICAL REVIEW B
    38. Wu, D; Liu, GL; Jing, C; Wu, YZ; Loison, D; Dong, GS; Jin, XF; Wang, DS
      Magnetic structure of Co1-xMnx alloys - art. no. 214403

      PHYSICAL REVIEW B
    39. Kiguchi, M; Saiki, K; Sasaki, T; Iwasawa, Y; Koma, A
      Heteroepitaxial growth of LiCl on Cu(001) - art. no. 205418

      PHYSICAL REVIEW B
    40. Van Roy, W; Akinaga, H; Miyanishi, S
      Interlayer coupling and magnetoresistance of MnGa-based trilayers with semiconducting, antiferromagnetic, and ferrimagnetic spacer layers - art. no. 184417

      PHYSICAL REVIEW B
    41. Itoh, M; Ohno, T
      Atomic-scale Monte Carlo study of step-flow growth modes on GaAs(001)-(2X4) - art. no. 125301

      PHYSICAL REVIEW B
    42. Strasser, T; Solterbeck, C; Schattke, W; Bartos, I; Cukr, M; Jiricek, P
      Valence-band photoemission from GaAs(100)-c(4x4) - art. no. 085309

      PHYSICAL REVIEW B
    43. Consorte, CD; Fong, CY; Watson, MD; Yang, LH; Ciraci, S
      Reaction path for Te during surfactant-mediated epitaxial growth of GaAs (100) - art. no. 041301

      PHYSICAL REVIEW B
    44. Vvedensky, DD
      Epitaxial phenomena across length and time scales

      SURFACE AND INTERFACE ANALYSIS
    45. Pemble, ME
      NESSPIOM - Network for enhanced semiconductor surface processing through in situ optical monitoring

      SURFACE AND INTERFACE ANALYSIS
    46. Itoh, M
      Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces

      PROGRESS IN SURFACE SCIENCE
    47. Delmouly, V; Bournel, A; Tremblay, G; Hesto, P
      Physical and magnetic properties of Co-oxide-GaAs contacts

      THIN SOLID FILMS
    48. Kawamura, T; Ishii, A
      Monte Carlo simulation of recovery process after MBE growth on GaAs(100)

      SURFACE SCIENCE
    49. Kawamura, T; Toyoshima, S; Ichimiya, A
      Monte Carlo simulation of decay process of pyramidal islands formed on Si(100) surface

      SURFACE SCIENCE
    50. Joyce, PB; Krzyzewski, TJ; Steans, PH; Bell, GR; Neave, JH; Jones, TS
      Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

      SURFACE SCIENCE
    51. De Padova, P; Quaresima, C; Perfetti, P; Larciprete, R; Brochier, R; Richter, C; Ilakovac, V; Bencok, P; Teodorescu, C; Aristov, VY; Johnson, RL; Hricovini, K
      Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface

      SURFACE SCIENCE
    52. Preobrajenski, AB; Gebhardt, RK; Uhlig, I; Chasse, T
      Two types of sulfur-induced (2 x 1) reconstructions on InP(001)

      SURFACE SCIENCE
    53. Pashley, DW; Neave, JH; Joyce, BA
      A model for the appearance of chevrons on RHEED patterns from InAs quantumdots

      SURFACE SCIENCE
    54. Berkovits, VL; Gordeeva, AB; Kosobukin, VA
      Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces

      SOLID STATE COMMUNICATIONS
    55. Zhang, SB; McMahon, WE; Olson, JM; Wei, SH
      Steps on As-terminated Ge(001) revisited: Theory versus experiment - art. no. 166104

      PHYSICAL REVIEW LETTERS
    56. Geelhaar, L; Marquez, J; Kratzer, P; Jacobi, K
      GaAs(2511): A new stable surface within the stereographic triangle

      PHYSICAL REVIEW LETTERS
    57. Kumpf, C; Marks, LD; Ellis, D; Smilgies, D; Landemark, E; Nielsen, M; Feidenhans, R; Zegenhagen, J; Bunk, O; Zeysing, JH; Su, Y; Johnson, RL
      Subsurface dimerization in III-V semiconductor (001) surfaces

      PHYSICAL REVIEW LETTERS
    58. Hilpert, U; Worschech, L; Rudloff, D; Schreiber, J; Ossau, W; Christen, J
      Spectroscopy of individual dislocation bundles in thin ZnSe films

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    59. Inoue, N; Higashino, T; Tanahashi, K; Kawamura, Y
      Work function of GaAs (001) surface obtained by the electron counting model

      JOURNAL OF CRYSTAL GROWTH
    60. Wallart, X; Deresmes, D; Mollot, F
      Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

      JOURNAL OF CRYSTAL GROWTH
    61. Daweritz, L; Schippan, F; Trampert, A; Kastner, M; Behme, G; Wang, ZM; Moreno, M; Schutzendube, P; Ploog, KH
      MBE growth, structure and magnetic properties of MnAs on GaAs on a microscopic scale

      JOURNAL OF CRYSTAL GROWTH
    62. Heyn, C; Dumat, C
      Formation and size evolution of self-assembled quantum dots

      JOURNAL OF CRYSTAL GROWTH
    63. Joyce, PB; Krzyzewski, TJ; Bell, GR; Jones, TS; Malik, S; Childs, D; Murray, R
      Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    64. Zhang, K; Heyn, C; Hansen, W; Schmidt, T; Falta, J
      Structural characterization of self-assembled InAs quantum dots grown by MBE

      JOURNAL OF CRYSTAL GROWTH
    65. Roh, CH; Park, YJ; Kim, KM; Park, YM; Kim, EK; Shim, KB
      Defect generation in multi-stacked InAs quantum dot/GaAs structures

      JOURNAL OF CRYSTAL GROWTH
    66. Fu, Q; Begarney, MJ; Li, CH; Law, DC; Hicks, RF
      Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment

      JOURNAL OF CRYSTAL GROWTH
    67. Yan, FW; Zhang, WJ; Zhang, RG; Cui, LQ; Liang, CG; Liu, SY
      Surface corrugation of In0.15Ga0.85As layers grown on (553)B-oriented GaAssubstrates by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    68. Gray, AL; Stintz, A; Malloy, KJ; Newell, TC; Lester, LF
      Morphology and relaxation in InyGa1-yAs/GaAs multi-layer structures

      JOURNAL OF CRYSTAL GROWTH
    69. Nath, KG; Maeda, F; Suzuki, S; Watanabe, Y
      Modified epitaxy in Co/S/GaAs(001) and comparison with Co/GaAs(001)

      JOURNAL OF APPLIED PHYSICS
    70. Hecht, JD; Frost, F; Hirsch, D; Neumann, H; Schindler, A; Preobrajenski, AB; Chasse, T
      Interstitial nitrogen induced by low-energy ion beam nitridation of AIII-BV semiconductor surfaces

      JOURNAL OF APPLIED PHYSICS
    71. Ueng, HJ; Chen, NP; Janes, DB; Webb, KJ; McInturff, DT; Melloch, MR
      Temperature-dependent behavior of low-temperature-grown GaAs nonalloyed ohmic contacts

      JOURNAL OF APPLIED PHYSICS
    72. Litvinov, D; Rosenauer, A; Gerthsen, D; Preis, H; Bauer, S; Kurtz, E
      On the origin of the "coffee-bean" contrast in transmission electron microscopy images of CdSe/ZnSe quantum dot structures

      JOURNAL OF APPLIED PHYSICS
    73. Frey, T; As, DJ; Bartels, M; Pawlis, A; Lischka, K; Tabata, A; Fernandez, JRL; Silva, MTO; Leite, JR; Haug, C; Brenn, R
      Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures

      JOURNAL OF APPLIED PHYSICS
    74. Gonzalez, MU; Gonzalez, Y; Gonzalez, L; Calleja, M; Sanchez-Gil, JA
      In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

      JOURNAL OF APPLIED PHYSICS
    75. Zhi, D; Davock, H; Murray, R; Roberts, C; Jones, TS; Pashley, DW; Goodhew, PJ; Joyce, BA
      Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy

      JOURNAL OF APPLIED PHYSICS
    76. Isakovic, AF; Berezovsky, J; Crowell, PA; Chen, LC; Carr, DM; Schultz, BD; Palmstrom, CJ
      Control of magnetic anisotropy in Fe1-xCox films on vicinal GaAs and Sc1-yEryAs surfaces

      JOURNAL OF APPLIED PHYSICS
    77. Xu, YB; Tselepi, M; Guertler, CM; Vaz, CAF; Wastlbauer, G; Bland, JAC; Dudzik, E; van der Laan, G
      Giant enhancement of orbital moments and perpendicular anisotropy in epitaxial Fe/GaAs(100)

      JOURNAL OF APPLIED PHYSICS
    78. Pechan, MJ; Compton, RL; Bennett, D; Chen, LC; Palmstrom, CJ; Allen, SJ
      Magnetic anisotropy and interlayer coupling in Fe0.5Co0.5(100) films on GaAs(100)

      JOURNAL OF APPLIED PHYSICS
    79. Matsumura, N; Haga, T; Muto, S; Nakata, Y; Yokoyama, N
      Lattice deformation and interdiffusion of InAs quantum dots on GaAs(100)

      JOURNAL OF APPLIED PHYSICS
    80. Matsushita, K; Fujisawa, A; Ando, N; Kobayashi, H; Naganuma, H; Okuyama, S; Okuyama, K
      Characterization of pure water-treated GaAs surfaces by measuring contact angles of water droplets

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    81. Sato, R; Mizushima, K
      Spin-valve transistor with an Fe/Au/Fe(001) base

      APPLIED PHYSICS LETTERS
    82. Xie, JQ; Dong, JW; Lu, J; Palmstrom, CJ; McKernan, S
      Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs

      APPLIED PHYSICS LETTERS
    83. Yeoh, TS; Liu, CP; Swint, RB; Huber, AE; Roh, SD; Woo, CY; Lee, KE; Coleman, JJ
      Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition

      APPLIED PHYSICS LETTERS
    84. LaBella, VP; Bullock, DW; Emery, C; Ding, Z; Thibado, PM
      Enabling electron diffraction as a tool for determining substrate temperature and surface morphology

      APPLIED PHYSICS LETTERS
    85. Bonanni, B; Orani, D; Lazzarino, M; Rubini, S; Franciosi, A
      Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles

      APPLIED PHYSICS LETTERS
    86. Ohtake, A; Ozeki, M
      In situ observation of surface processes in InAs/GaAs(001) heteroepitaxy: The role of As on the growth mode

      APPLIED PHYSICS LETTERS
    87. Bracker, AS; Nosho, BZ; Barvosa-Carter, W; Whitman, LJ; Bennett, BR; Shanabrook, BV; Culbertson, JC
      Stoichiometry-induced roughness on antimonide growth surfaces

      APPLIED PHYSICS LETTERS
    88. Chun, SH; Potashnik, SJ; Ku, KC; Berry, JJ; Schiffer, P; Samarth, N
      Intrinsic exchange biasing in MnAs epilayers grown on (001) GaAs

      APPLIED PHYSICS LETTERS
    89. Marquez, J; Geelhaar, L; Jacobi, K
      Atomically resolved structure of InAs quantum dots

      APPLIED PHYSICS LETTERS
    90. Gleim, T; Heske, C; Umbach, E; Schumacher, C; Faschinger, W; Ammon, C; Probst, M; Steinruck, HP
      Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer

      APPLIED PHYSICS LETTERS
    91. Begarney, MJ; Li, CH; Law, DC; Visbeck, SB; Sun, Y; Hicks, RF
      Reflectance difference spectroscopy of mixed phases of indium phosphide (001)

      APPLIED PHYSICS LETTERS
    92. Bardi, J; Binggeli, N; Baldereschi, A
      Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts

      PHYSICAL REVIEW B
    93. Goletti, C; Springer, C; Resch-Esser, U; Esser, N; Richter, W; Fimland, BO
      Optical characterization of indium-terminated GaAs(001) surfaces

      PHYSICAL REVIEW B
    94. Chen, F; Lu, HB; Zhao, T; Jin, KJ; Chen, ZH; Yang, GZ
      Real-time optical monitoring of the heteroepitaxy of oxides by an oblique-incidence reflectance difference technique

      PHYSICAL REVIEW B
    95. Ross, RS; Gyure, MF
      Intermediate scaling regime for multilayer epitaxial growth

      PHYSICAL REVIEW B
    96. Kastner, M; Schippan, F; Schutzendube, P; Daweritz, L; Ploog, K
      Ferromagnetic MnAs grown on GaAs(001): In situ investigations

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    97. Chen, LC; Dong, JW; Schultz, BD; Palmstrom, CJ; Berezovsky, J; Isakovic, A; Crowell, PA; Tabat, N
      Epitaxial ferromagnetic metal/GaAs(100) heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    98. Wang, ZM; Daweritz, T; Schutzendube, P; Ploog, KH
      Evolution of Si-on-GaAs (001) surface morphology towards self-organized ordered Si structures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    99. Balderas-Navarro, RE; Hingerl, K; Hilber, W; Stifter, D; Bonanni, A; Sitter, H
      In situ reflectance-difference spectroscopy of doped CdTe and ZnTe grown by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    100. Berkovits, VL; Gordeeva, AB; Lantratov, VM; L'vova, TV
      Optical anisotropy of the (100) surfaces in AlxGa1-xAs ternary compounds

      PHYSICS OF THE SOLID STATE


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Documento generato il 08/08/20 alle ore 17:26:52