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La ricerca find articoli where soggetti phrase all words 'FIELD EFFECT MOBILITY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 29 riferimenti
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    1. Liu, YQ; Hu, WP; Qiu, WF; Xu, Y; Zhou, SQ; Zhu, DB
      Organic field-effect transistors based on Langmuir-Blodgett films of substituted phthalocyanines

      SENSORS AND ACTUATORS B-CHEMICAL
    2. Krishnan, AT; Bae, SH; Fonash, SJ
      Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

      IEEE ELECTRON DEVICE LETTERS
    3. Banerjee, S; Chatty, K; Chow, TP; Gutmann, RJ
      Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs

      JOURNAL OF ELECTRONIC MATERIALS
    4. Crone, B; Dodabalapur, A; Gelperin, A; Torsi, L; Katz, HE; Lovinger, AJ; Bao, Z
      Electronic sensing of vapors with organic transistors

      APPLIED PHYSICS LETTERS
    5. Martin, S; Chiang, CS; Nahm, JY; Li, T; Kanicki, J; Ugai, Y
      Influence of the amorphous silicon thickness on top gate thin-film transistor electrical performances

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    6. Kuo, CT; Weng, SZ
      Field-effect transistor with oligoaniline thin films as semiconductor

      POLYMERS FOR ADVANCED TECHNOLOGIES
    7. Schon, JH; Kloc, C; Bao, ZN; Batlogg, B
      Electron transport in fluorinated copper-phthalocyanine

      ADVANCED MATERIALS
    8. Lim, WY; Nagamatsu, S; Takashima, W; Endo, T; Rikukawa, M; Kaneto, K
      Dependencies of field effect mobility on regioregularity and side chain length in poly(alkylthiophene) films

      IEICE TRANSACTIONS ON ELECTRONICS
    9. Lukevics, E; Ryabova, V; Arsenyan, P; Belyakov, S; Popelis, J; Pudova, O
      Bithienylsilanes: unexpected structure and reactivity

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    10. Lim, BC; Choi, YJ; Choi, JH; Jang, J
      Hydrogenated amorphous silicon thin film transistor fabricated on plasma treated silicon nitride

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    11. Kaneto, K; Lim, WY; Takashima, W; Endo, T; Rikukawa, M
      Alkyl chain length dependence of field-effect mobilities in regioregular poly(3-alkylthiophene) films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    12. Choi, JS; Kim, DY; Lee, JH; Kang, DY; Kim, YK; Shin, DM
      Electrical characteristics of pentacene organic thin film transistors withsilicon dioxide gate insulator

      MOLECULAR CRYSTALS AND LIQUID CRYSTALS
    13. Ueno, K; Asai, R; Tsuji, T
      H-2 surface treatment for gate-oxidation of SiC metal-oxide-semiconductor field effect transisitsors

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    14. Ueno, K; Oikawa, T
      Counter-doped MOSFET's of 4H-SiC

      IEEE ELECTRON DEVICE LETTERS
    15. Katz, HE; Li, W; Lovinger, AJ; Laquindanum, J
      Solution-phase deposition of oligomeric TFT semiconductors

      SYNTHETIC METALS
    16. Barbarella, G; Zambianchi, M; Antolini, L; Ostoja, P; Maccagnani, P; Bongini, A; Marseglia, EA; Tedesco, E; Gigli, G; Cingolani, R
      Solid-state conformation, molecular packing, and electrical and optical properties of processable beta-methylated sexithiophenes

      JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
    17. KOBAYASHI S; NONOMURA S; USHIKOSHI K; ABE K; NISHIO M; FURUKAWA H; GOTOH T; NITTA S
      OPTICAL AND ELECTRICAL-PROPERTIES OF NANO-CRYSTALLINE GAN THIN-FILMS AND THEIR APPLICATION FOR THIN-FILM-TRANSISTOR

      Journal of crystal growth
    18. KIM TK; IHN TH; LEE BI; JOO SK
      HIGH-PERFORMANCE LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY NEW METAL-INDUCED LATERAL CRYSTALLIZATION PROCESS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    19. ANDO M; WAKAGI M; MINEMURA T
      EFFECTS OF BACK-CHANNEL ETCHING ON THE PERFORMANCE OF A-SI-H THIN-FILM TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    20. TAKECHI K; TAKAGI T; KANEKO S
      THE MECHANISM AT WORK IN 40 MHZ DISCHARGE SIH4 NH3/N-2 PLASMA CHEMICAL-VAPOR-DEPOSITION OF SINX FILMS AT VERY RATES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    21. KUO CT; WENG SZ; HUANG RL
      FIELD-EFFECT TRANSISTOR WITH POLYANILINE AND POLY(2-ALKYLANILINE) THIN-FILM AS SEMICONDUCTOR

      Synthetic metals
    22. PARK JH; KIM CJ
      A STUDY ON THE FABRICATION OF A MULTIGATE MULTICHANNEL POLYSILICON THIN-FILM-TRANSISTOR/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. TAKECHI K; TAKAGI T; KANEKO S
      PERFORMANCE OF A-SI-H THIN-FILM TRANSISTORS FABRICATED BY VERY HIGH-FREQUENCY DISCHARGE SILANE PLASMA CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. ROLLAND A; RICHARD J; KLEIDER JP; MENCARAGLIA D
      SOURCE AND DRAIN PARASITIC RESISTANCES OF AMORPHOUS-SILICON TRANSISTORS - COMPARISON BETWEEN TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    25. PALOHEIMO J; LAAKSO K; ISOTALO H; STUBB H
      CONDUCTIVITY, THERMOELECTRIC-POWER AND FIELD-EFFECT MOBILITY IN SELF-ASSEMBLED FILMS OF POLYANILINES AND OLIGOANILINES

      Synthetic metals
    26. ASSADI A; SPETZ A; WILLANDER M; SVENSSON C; LUNDSTROM I; INGANAS O
      INTERACTION OF PLANAR POLYMER SCHOTTKY-BARRIER DIODES WITH GASEOUS SUBSTANCES

      Sensors and actuators. B, Chemical
    27. YEH CF; CHEN CL; YANG YC; LIN SS; YANG TZ; HONG TY
      LOW-TEMPERATURE-PROCESSED POLY-SI THIN-FILM TRANSISTORS USING SOLID-PHASE-CRYSTALLIZED AND LIQUID-PHASE-DEPOSITED GATE OXIDE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    28. KURIYAMA H; NOHDA T; AYA Y; KUWAHARA T; WAKISAKA K; KIYAMA S; TSUDA S
      COMPREHENSIVE STUDY OF LATERAL GRAIN-GROWTH IN POLY-SI FILMS BY EXCIMER-LASER ANNEALING AND ITS APPLICATION TO THIN-FILM TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    29. CHOI DH; MATSUMURA M
      THE ANNEALING EFFECTS OF EXCIMER-LASER-PRODUCED LARGE-GRAIN POLY-SI THIN-FILM TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/08/20 alle ore 09:10:57