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La ricerca find articoli where soggetti phrase all words 'EXCIMER LASER ANNEALING' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 32 riferimenti
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    1. Fortunato, G; Mariucci, L; Stanizzi, M; Privitera, V; Spinella, C; Coffa, S; Napolitani, E
      Fabrication of ultra-shallow junctions with high electrical activation by excimer laser annealing

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    2. Matsuo, N; Abe, H; Kawamoto, N; Miyai, Y; Hamada, H
      Recovery stage of polycrystalline-Si prepared by excimer laser annealing

      MATERIALS TRANSACTIONS
    3. Jeon, JH; Lee, MC; Park, KC; Han, MK
      A new polycrystalline silicon TFT with a single grain boundary in the channel

      IEEE ELECTRON DEVICE LETTERS
    4. Kim, CH; Jung, SH; Yoo, JS; Han, MK
      Poly-Si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping

      IEEE ELECTRON DEVICE LETTERS
    5. Choe, SM; Ahn, JA; Kim, O
      Fabrication of laser-annealed poly-TFT by forming a Si1-xGex thermal barrier

      IEEE ELECTRON DEVICE LETTERS
    6. Jyumonji, M; Okumura, H; Sera, K; Okumura, F; Sugioka, K; Midorikawa, K
      Double-pulse method for enlarging lateral grain growth of excimer laser annealed poly-Si thin films

      NEC RESEARCH & DEVELOPMENT
    7. Niraula, M; Nakamura, A; Aoki, T; Tatsuoka, H; Hatanaka, Y
      Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing

      JOURNAL OF ELECTRONIC MATERIALS
    8. Hatanaka, Y; Niraula, M; Nakamura, A; Aoki, T
      Excimer laser doping techniques for II-VI semiconductors

      APPLIED SURFACE SCIENCE
    9. Yoshimoto, S; Oh, CH; Matsumura, M
      A new sample structure for position-controlled giant-grain growth of silicon using phase-modulated excimer-laser annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Nakata, M; Inoue, K; Matsumura, M
      A new nucleation-site-control excimer-laser-crystallization method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    11. Yeh, WC; Matsumura, M
      Effects of a low-melting-point underlayer on excimer-laser-induced lateralcrystallization of Si thin-films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    12. Seo, JW; Kokubo, Y; Aya, Y; Nohda, T; Hamada, H; Kuwano, H
      Lateral solid phase recrystallization from the crystal seed in Ge-ion-implanted amorphous silicon films by repetition rapid thermal annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    13. Yeh, WC; Matsumura, M
      Numerical calculation of excimer-laser-induced lateral-crystallization of silicon thin-films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    14. Donohue, PP; Todd, MA
      Pulse-extended excimer laser annealing of lead zirconate titanate thin films

      INTEGRATED FERROELECTRICS
    15. Tanabe, H
      Effect of cooling rate on excimer laser crystallization of silicon thin films

      NEC RESEARCH & DEVELOPMENT
    16. Seo, JW; Akiyama, S; Aya, Y; Nohda, T; Hamada, H; Kajiyama, K; Kanaya, M; Kuwano, H
      Lateral solid-phase recrystallization from the crystal seed selectively formed by excimer laser annealing in Ge-ion-implanted amorphous silicon films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    17. Matsuo, N; Aya, Y; Kanamori, T; Nouda, T; Hamada, H; Miyoshi, T
      Study of crystal growth mechanism for poly-Si film prepared by excimer laser annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    18. Asada, H; Sera, K; Okumura, F
      High-performance low-temperature poly-Si TFTs and circuits

      NEC RESEARCH & DEVELOPMENT
    19. Asada, H; Sera, K; Hirata, K; Sekine, H; Honbo, N; Konno, T
      A 2.4-inch, SXGA low-temperature poly-Si TFT-LCD light valve

      NEC RESEARCH & DEVELOPMENT
    20. Mariucci, L; Carluccio, R; Pecora, A; Foglietti, V; Fortunato, G; Della Sala, D
      A two-pass excimer laser annealing process to control amorphous silicon crystallization

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    21. Yeh, WC; Matsumura, M
      Preparation of giant-grain seed layer for poly-silicon thin-film solar cells

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    22. OH CH; MATSUMURA N
      PREPARATION OF POSITION-CONTROLLED CRYSTAL-SILICON ISLAND ARRAYS BY MEANS OF EXCIMER-LASER ANNEALING

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. GROB A; GROB JJ; MULLER D; PREVOT B; STUCK R
      STRAIN COMPENSATION IN SI1-X-YGEXCY LAYERS PREPARED BY ION-IMPLANTATION AND EXCIMER-LASER ANNEALING

      Thin solid films
    24. TSUKAMOTO H; YAMAMOTO H; NOGUCHI T; MASUYA H; SUZUKI T
      IMPROVED CHARACTERISTICS OF P(-N JUNCTIONS FORMED BY EXCIMER-LASER ANNEALING WITH LOW-TEMPERATURE PRE-ANNEALING())

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    25. MINAMIHABA G; IIJIMA T; SHIMOOKA Y; TAMURA H; KAWANOUE T; HIRABAYASHI H; SAKURAI N; OHKAWA J; OBARA T; EGAWA H; IDAKA T; KUBOTA T; SHIMIZU T; KOYAMA M; OOSHIMA J; SUGURO K
      DOUBLE-LEVEL CU INLAID INTERCONNECTS WITH SIMULTANEOUSLY FILLED VIA PLUGS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    26. KIM CD; ISHIHARA R; MATSUMURA M
      EXCIMER-LASER ANNEALING TECHNOLOGY FOR HYDROGENATED AMORPHOUS-SILICONDEVICES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    27. KURIYAMA H; NOHDA T; AYA Y; KUWAHARA T; WAKISAKA K; KIYAMA S; TSUDA S
      COMPREHENSIVE STUDY OF LATERAL GRAIN-GROWTH IN POLY-SI FILMS BY EXCIMER-LASER ANNEALING AND ITS APPLICATION TO THIN-FILM TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    28. YAMAMOTO K; NAKASHIMA A; SUZUKI T; YOSHIMI M; NISHIO H; IZUMINA M
      THIN-FILM POLYCRYSTALLINE SI SOLAR-CELL ON GLASS SUBSTRATE FABRICATEDBY A NOVEL LOW-TEMPERATURE PROCESS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    29. JHON YH; KIM DH; CHU H; CHOI SS
      CRYSTALLIZATION OF AMORPHOUS-SILICON BY EXCIMER-LASER ANNEALING WITH A LINE-SHAPE BEAM HAVING A GAUSSIAN PROFILE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    30. JHON YH; KIM DH; CHU H; CHOI SS
      CRYSTALLIZATION OF AMORPHOUS-SILICON BY EXCIMER-LASER ANNEALING WITH A LINE-SHAPE BEAM HAVING A GAUSSIAN PROFILE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    31. KURIYAMA H; NOHDA T; ISHIDA S; KUWAHARA T; NOGUCHI S; KIYAMA S; TSUDA S; NAKANO S
      LATERAL GRAIN-GROWTH OF POLY-SI FILMS WITH A SPECIFIC ORIENTATION BY AN EXCIMER-LASER ANNEALING METHOD

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    32. TSUKAMOTO H; YAMAMOTO H; NOGUCHI T; SUZUKI T
      SELECTIVE ANNEALING UTILIZING SINGLE-PULSE EXCIMER-LASER IRRADIATION FOR SHORT-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/10/20 alle ore 17:57:49