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1. Bai, KH; Hong, JI; Chung, CW; Kim, SS; Chang, HY
   Pressure and helium mixing effects on plasma parameters in temperature control using a grid system
   PHYSICS OF PLASMAS
   
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   Analysis of chlorine-containing plasmas applied in III/V semiconductor processing
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   Modeling and simulation of plasma etching reactors for microelectronics
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   Systematic simulations of plasma structures in chlorine radio frequency discharges
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   COMPARISON OF EXPERIMENTS WITH A LUMPED-PARAMETER MODEL OF THE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF COPPER
   Journal of the Electrochemical Society
   
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   RELATIVE ATOMIC CHLORINE DENSITY IN INDUCTIVELY-COUPLED CHLORINE PLASMAS
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   MASS-SPECTROMETRIC DETERMINATION OF THE PERCENT DISSOCIATION OF A HIGH-DENSITY CHLORINE PLASMA
   Applied physics letters
   
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   DEPOSITION UNIFORMITIES ON A WAFER AND IN A TRENCH FOR TUNGSTEN SILICIDE LPCVD IN A SINGLE-WAFER REACTOR
   The Korean journal of chemical engineering
   
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10. OH DB; STANTON AC; ANDERSON HM; SPLICHAL MP
    IN-SITU DIODE-LASER ABSORPTION-MEASUREMENTS OF PLASMA SPECIES IN A GASEOUS ELECTRONICS CONFERENCE REFERENCE CELL REACTOR
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    
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    MODELING AND CONTROL OF MICROELECTRONICS MATERIALS PROCESSING
    Computers & chemical engineering
    
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12. KUPRIYANOVSKAYA AP; SVETTSOV VI; SITANOV DV
    ON THE ACTINOMETRIC DETERMINATION OF THE CONCENTRATION OF CHLORINE ATOMS IN A DISCHARGE
    High energy chemistry
    
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    MODELING AND SIMULATION OF GLOW-DISCHARGE PLASMA REACTORS
    Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    
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14. METSELAAR JW; KUZNETSOV VI; ZHIDKOV AG
    PHOTORESIST STRIPPING IN AFTERGLOW OF AR-O2 MICROWAVE PLASMA
    Journal of applied physics
    
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15. KROESEN GMW; DEHOOG FJ
    IN-SITU DIAGNOSTICS FOR PLASMA SURFACE PROCESSING
    Applied physics. A, Solids and surfaces
    
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    REAL-TIME IN-SITU DETECTION OF SF6 IN A PLASMA REACTOR
    Applied physics letters
    
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