Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where soggetti phrase all words 'ETCHING REACTOR' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 16 riferimenti
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    1. Bai, KH; Hong, JI; Chung, CW; Kim, SS; Chang, HY
      Pressure and helium mixing effects on plasma parameters in temperature control using a grid system

      PHYSICS OF PLASMAS
    2. Franz, G; Kelp, A; Messerer, P
      Analysis of chlorine-containing plasmas applied in III/V semiconductor processing

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    3. Economou, DJ
      Modeling and simulation of plasma etching reactors for microelectronics

      THIN SOLID FILMS
    4. Kawano, S; Nanbu, K; Kageyama, J
      Systematic simulations of plasma structures in chlorine radio frequency discharges

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    5. SARFATY M; HARPER M; HERSHKOWITZ N
      A NOVEL ELECTROOPTICAL PROBE TO DIAGNOSE PLASMA UNIFORMITY

      Review of scientific instruments
    6. LAKSHMANAN SK; GILL WN
      COMPARISON OF EXPERIMENTS WITH A LUMPED-PARAMETER MODEL OF THE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF COPPER

      Journal of the Electrochemical Society
    7. HEBNER GA
      RELATIVE ATOMIC CHLORINE DENSITY IN INDUCTIVELY-COUPLED CHLORINE PLASMAS

      Journal of applied physics
    8. GADDY GA; WEBB SF; BLUMENTHAL R
      MASS-SPECTROMETRIC DETERMINATION OF THE PERCENT DISSOCIATION OF A HIGH-DENSITY CHLORINE PLASMA

      Applied physics letters
    9. PARK JH
      DEPOSITION UNIFORMITIES ON A WAFER AND IN A TRENCH FOR TUNGSTEN SILICIDE LPCVD IN A SINGLE-WAFER REACTOR

      The Korean journal of chemical engineering
    10. OH DB; STANTON AC; ANDERSON HM; SPLICHAL MP
      IN-SITU DIODE-LASER ABSORPTION-MEASUREMENTS OF PLASMA SPECIES IN A GASEOUS ELECTRONICS CONFERENCE REFERENCE CELL REACTOR

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    11. BADGWELL TA; BREEDIJK T; BUSHMAN SG; BUTLER SW; CHATTERJEE S; EDGAR TF; TOPRAC AJ; TRACHTENBERG I
      MODELING AND CONTROL OF MICROELECTRONICS MATERIALS PROCESSING

      Computers & chemical engineering
    12. KUPRIYANOVSKAYA AP; SVETTSOV VI; SITANOV DV
      ON THE ACTINOMETRIC DETERMINATION OF THE CONCENTRATION OF CHLORINE ATOMS IN A DISCHARGE

      High energy chemistry
    13. LYMBEROPOULOS DP; ECONOMOU DJ
      MODELING AND SIMULATION OF GLOW-DISCHARGE PLASMA REACTORS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    14. METSELAAR JW; KUZNETSOV VI; ZHIDKOV AG
      PHOTORESIST STRIPPING IN AFTERGLOW OF AR-O2 MICROWAVE PLASMA

      Journal of applied physics
    15. KROESEN GMW; DEHOOG FJ
      IN-SITU DIAGNOSTICS FOR PLASMA SURFACE PROCESSING

      Applied physics. A, Solids and surfaces
    16. SUN HC; WHITTAKER EA
      REAL-TIME IN-SITU DETECTION OF SF6 IN A PLASMA REACTOR

      Applied physics letters


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Documento generato il 23/01/21 alle ore 13:17:02