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La ricerca find articoli where soggetti phrase all words 'EPITAXY GROWTH' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 95 riferimenti
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    1. Juppo, M; Alen, P; Ritala, M; Leskela, M
      Trimethylaluminum as a reducing agent in the atomic layer deposition of Ti(Al)N thin films

      CHEMICAL VAPOR DEPOSITION
    2. Calleja, E; Sanchez-Garcia, MA; Calle, F; Naranjo, FB; Munoz, E; Jahn, U; Ploog, K; Sanchez, J; Calleja, JM; Saarinen, K; Hautojarvi, P
      Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layermorphology and doping

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    3. Yao, X; Nomura, K; Yoshizumi, M; Kuznetsov, M; Nakamura, Y; Izumi, T; Shiohara, Y
      Superconducting transition temperature of NdBCO liquid phase epitaxy film on MgO substrate and effect of Mg diffusion

      PHYSICA C
    4. Yao, X; Izumi, T; Hobara, N; Nakamura, Y; Izumi, T; Shiohara, Y
      REBCO superconductor on Ni-NdBCO buffered MgO substrate by liquid phase epitaxy process (RE = Nd, Sm, Y)

      PHYSICA C
    5. Rahtu, A; Kukli, K; Ritala, M
      In situ mass spectrometry study on atomic layer deposition from metal (Ti,Ta, and Nb) ethoxides and water

      CHEMISTRY OF MATERIALS
    6. Martin, DS; Weightman, P
      Reflection anisotropy spectroscopy: a new probe of metal surfaces

      SURFACE AND INTERFACE ANALYSIS
    7. Layson, AR; Thiel, PA
      Testing realistic environments for metal film growth and aging: chemical insights into the effect of oxygen on Ag/Ag(100)

      SURFACE SCIENCE
    8. Alen, P; Juppo, M; Ritala, M; Sajavaara, T; Keinonen, J; Leskela, M
      Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    9. Gourgon, C; Robadey, J; Martin, D; Filipowitz, F; Mahler, L; Ky, NH; Deveaud, D; Reinhart, FK
      Complex-coupled DFB lasers: Advantages and drawbacks of gain and radiationloss grating

      IEEE PHOTONICS TECHNOLOGY LETTERS
    10. Kukli, K; Ritala, M; Leskela, M
      Atomic layer deposition and chemical vapor deposition of tantalum oxide bysuccessive and simultaneous pulsing of tantalum ethoxide and tantalum chloride

      CHEMISTRY OF MATERIALS
    11. Martin, DS; Weightman, P
      Reflection anisotropy spectroscopy: An optical probe of surfaces and interfaces

      SURFACE REVIEW AND LETTERS
    12. Kita, T; Tachikawa, K; Tango, H; Yamashita, K; Nishino, T
      Self-assembled growth of InAs-quantum dots and postgrowth behavior studiedby reflectance-difference spectroscopy

      APPLIED SURFACE SCIENCE
    13. Aarik, J; Aidla, A; Sammelselg, V; Uustare, T; Ritala, M; Leskela, M
      Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water

      THIN SOLID FILMS
    14. Matero, R; Rahtu, A; Ritala, M; Leskela, M; Sajavaara, T
      Effect of water dose on the atomic layer deposition rate of oxide thin films

      THIN SOLID FILMS
    15. Horvath, ZJ; Dozsa, L; Van Tuyen, V; Podor, B; Nemcsics, A; Frigeri, P; Gombia, E; Mosca, R; Franchi, S
      Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

      THIN SOLID FILMS
    16. Osten, HJ
      MBE growth and properties of supersaturated, carbon-containing silicon/germanium alloys on Si(001)

      THIN SOLID FILMS
    17. Sokolov, NS; Suturin, SM
      MBE-growth peculiarities of fluoride (CdF2-CaF2) thin film structures

      THIN SOLID FILMS
    18. Gaiduk, PI; Larsen, AN; Hansen, JL
      Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density

      THIN SOLID FILMS
    19. Griesche, J
      Investigations on the growth mechanism of wide-gap II-VI semiconductors bymeans of reflection high energy electron diffraction

      THIN SOLID FILMS
    20. Sadowski, J; Domagala, JZ; Bak-Misiuk, J; Kolesnik, S; Swiatek, K; Kanski, J; Ilver, L
      Structural properties of MBE grown GaMnAs layers

      THIN SOLID FILMS
    21. Diduszko, R; Domuchowski, V; Nadolny, AJ; Sadowski, J
      Influence of Mn content in MBE-grown Sn1-xMnxTe layers on their structuralproperties studied by X-ray diffraction

      THIN SOLID FILMS
    22. Szamota-Sadowska, K; Guziewicz, E; Kowalski, BJ; Sadowski, J; Orlowski, BA; Lesiak-Orlowska, B; Guillot, C; Barrett, N; Johnson, RL
      Electronic structure of MBE grown CdYbTe: photoemission studies

      THIN SOLID FILMS
    23. Anisimov, OV; Banshchikov, AG; Krupin, AV; Moisseeva, MM; Sokolov, NS; Ulin, VP; Yakovlev, NL
      Manganese fluoride epitaxial growth on Si(111)

      THIN SOLID FILMS
    24. Seweryn, A; Wojtowicz, T; Karczewski, G; Barcz, A; Jakiela, R
      Cation diffusion in MBE-grown CdTe layers

      THIN SOLID FILMS
    25. Przeslawski, T; Wolkenberg, A; Reginski, K; Kaniewski, J; Bak-Misiuk, J
      Growth and transport properties of relaxed epilayers of InAs on GaAs

      THIN SOLID FILMS
    26. Bimberg, D; Grundmann, M; Heinrichsdorff, F; Ledentsov, NN; Ustinov, VM; Zhukov, AE; Kovsh, AR; Maximov, MV; Shernyakov, YM; Volovik, BV; Tsatsul'nikov, AF; Kop'ev, PS; Alferov, ZI
      Quantum dot lasers: breakthrough in optoelectronics

      THIN SOLID FILMS
    27. Pessa, M; Toivonen, M; Savolainen, P; Orsila, S; Sipila, P; Saarinen, M; Melanen, P; Vilokkinen, V; Uusimaa, P; Haapamaa, J
      Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy

      THIN SOLID FILMS
    28. Grzegory, I; Porowski, S
      GaN substrates for molecular beam epitaxy growth of homoepitaxial structures

      THIN SOLID FILMS
    29. Nemcsics, A
      Correlation between the critical layer thickness and the decaytime constant of RHEED oscillations in strained InxGa1-xAs/GaAs structures

      THIN SOLID FILMS
    30. Kukli, K; Ritala, M; Matero, R; Leskela, M
      Influence of atomic layer deposition parameters on the phase content of Ta2O5 films

      JOURNAL OF CRYSTAL GROWTH
    31. Juppo, M; Ritala, M; Leskela, M
      Use of 1,1-dimethylhydrazine in the atomic layer deposition of transition metal nitride thin films

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    32. Di Natale, C; Goletti, C; Paolesse, R; Della Sala, F; Drago, M; Chiaradia, P; Lugli, P; D'Amico, A
      Optical anisotropy of Langmuir-Blodgett sapphyrin films

      APPLIED PHYSICS LETTERS
    33. Kim, K; Kim, HS; Lee, HJ
      Point-defect associated thermionic hole emissions from p-type Si/Si1-xGex/Si quantum well structures

      JOURNAL OF SOLID STATE ELECTROCHEMISTRY
    34. Ritala, M; Juppo, M; Kukli, K; Rahtu, A; Leskela, M
      In situ characterization of atomic layer deposition processes by a mass spectrometer

      JOURNAL DE PHYSIQUE IV
    35. Ritala, M; Kalsi, P; Riihela, D; Kukli, K; Leskela, M; Jokinen, J
      Controlled growth of TaN, Ta3N5, and TaOxNy thin films by atomic layer deposition

      CHEMISTRY OF MATERIALS
    36. Grein, CH; Garland, JW; Sivananthan, S; Wijewarnasuriya, PS; Aqariden, F; Fuchs, M
      Arsenic incorporation in MBE grown Hg1-xCdxTe

      JOURNAL OF ELECTRONIC MATERIALS
    37. Macauley, DJ; Kelly, PV; Mongey, KF; Crean, GM
      Effects of plasma on excimer lamp based selective activation processes forelectroless plating

      APPLIED SURFACE SCIENCE
    38. Macauley, DJ; Kelly, PV; Mongey, KF; Crean, GM
      Atmospheric pressure excimer lamp-assisted photoselective activation process for electroless plating

      APPLIED SURFACE SCIENCE
    39. Baudoing-Savois, R; De Santis, M; Saint-Lager, MC; Dolle, P; Geaymond, O; Taunier, P; Jeantet, P; Roux, JP; Renaud, G; Barbier, A; Robach, O; Ulrich, O; Mougin, A; Berard, G
      A new UHV diffractometer for surface structure and real time molecular beam deposition studies with synchrotron radiations at ESRF

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    40. Genty, F; Almuneau, G; Chusseau, L; Wilk, A; Gaillard, S; Boissier, G; Grech, P; Jacquet, J
      Growth and characterization of vertical cavity structures on InP with GaAsSb AlAsSb Bragg mirrors for 1.55 mu m emission

      JOURNAL OF CRYSTAL GROWTH
    41. Feng, ZC; Armour, E; Ferguson, I; Stall, RA; Holden, T; Malikova, L; Wan, JZ; Pollak, FH; Pavlosky, M
      Nondestructive assessment of In-0.48(Ga1-xAlx)(0.52)P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition

      JOURNAL OF APPLIED PHYSICS
    42. Chan, HYH; Takoudis, CG; Weaver, MJ
      In-situ monitoring of chemical vapor deposition at ambient pressure by surface-enhanced Raman spectroscopy: Initial growth of tantalum(V) oxide on platinum

      JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
    43. Ploog, KH; Notzel, R
      Novel GaAs quantum wire and dot arrays by hydrogen-assisted molecular beamepitaxy on high-index substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    44. JIANG AQ; SUN CZ; HAO ZB; LUO Y; WANG JH
      NOVEL LASER STRUCTURES BASED ON MQW INTERDIFFUSION USING RAPID THERMAL ANNEALING TECHNIQUE

      IEEE journal of selected topics in quantum electronics
    45. HAWORTH L; LU J; HILL P; WESTWOOD DI; MACDONALD JE; HARTMANN N; SCHNEIDER A; ZAHN DRT
      FORMATION OF AN SB-N COMPOUND DURING NITRIDATION OF INSB(001) SUBSTRATES USING ATOMIC NITROGEN

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    46. SAMMELSELG V; ROSENTAL A; TARRE A; NIINISTO L; HEISKANEN K; ILMONEN K; JOHANSSON LS; UUSTARE T
      TIO2 THIN-FILMS BY ATOMIC LAYER DEPOSITION - A CASE OF UNEVEN GROWTH AT LOW-TEMPERATURE

      Applied surface science
    47. GONDA S; ASAHI H; YAMAMOTO K; HIDAKA K; SATO J; TASHIMA T; ASAMI K
      METALORGANIC MOLECULAR-BEAM EPITAXY ETCHING OF III-V SEMICONDUCTORS/

      Applied surface science
    48. Lastras-Martinez, LF; Santos, PV; Ronnow, D; Cardona, M; Specht, P; Eberl, K
      Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    49. Bennett, BR
      Strain relaxation in InAs/GaSb heterostructures

      APPLIED PHYSICS LETTERS
    50. YASUDA T; KIMURA K; MIWA S; KUO LH; OHTAKE A; JIN CG; TANAKA K
      REFLECTANCE-DIFFERENCE STUDIES OF INTERFACE-FORMATION AND INITIAL-GROWTH PROCESSES IN ZNSE GAAS(001) HETEROEPITAXY/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    51. POLAMO M; LESKELA M
      SYNTHESIS AND CRYSTAL-STRUCTURE OF AN 8-COORDINATED TETRAKIS[2-(PHENYLAMIDO)PYRIDINE]HAFNIUM AND COMPARISON WITH A 4-COORDINATED TETRAKIS(DIPHENYLAMIDO)HAFNIUM(IV)

      Acta chemica Scandinavica
    52. OEPTS W; GIJS MAM; REINDERS A; JUNGBLUT RM; KERKHOF JM; VANZON AMA; DEJONGE WJM
      PERPENDICULAR GIANT MAGNETORESISTANCE OF CO CU MULTILAYERS ON V-GROOVED SUBSTRATES - DEPENDENCE ON DEPOSITION METHOD/

      Journal of magnetism and magnetic materials
    53. GAINES JM; KOHLHEPP JT; BLOEMEN PJH; WOLF RM; REINDERS A; JUNGBLUT RM
      A SCANNING-TUNNELING-MICROSCOPY INVESTIGATION OF MBE-GROWN FE3O4(001)

      Journal of magnetism and magnetic materials
    54. ROTERMUND HH
      IMAGING OF DYNAMIC PROCESSES ON SURFACES BY LIGHT

      Surface science reports
    55. UTZMEIER T; ARMELLES G; POSTIGO PA; BRIONES F
      OPTICAL-PROPERTIES OF INSB LAYERS CONFINED BY INP

      Physical review. B, Condensed matter
    56. HIRAOKA YS
      AB-INITIO MOLECULAR-ORBITAL STUDY ON THE AS-STABILIZED GAAS(001)-(2X4)BETA(1) SURFACE

      Surface science
    57. KRUEGER M; BOROVSKY B; GANZ E
      DIFFUSION OF ADSORBED SI DIMERS ON SI(001)

      Surface science
    58. DAWERITZ L; SCHUTZENDUBE P; REICHE M; PLOOG KH
      ATOMIC CONFIGURATIONS DURING SI INCORPORATION ON GAAS(001) IN AS ATMOSPHERE EVIDENCED BY REFLECTANCE DIFFERENCE SPECTROSCOPY

      Surface science
    59. SIIMON H; AARIK J
      THICKNESS PROFILES OF THIN-FILMS CAUSED BY SECONDARY REACTIONS IN FLOW-TYPE ATOMIC LAYER DEPOSITION REACTORS

      Journal of physics. D, Applied physics
    60. POSTIGO PA; UTZMEIER T; ARMELLES G; BRIONES F
      A NEW IN-SITU III-V SURFACE CHARACTERIZATION TECHNIQUE - CHEMICAL MODULATION SPECTROSCOPY

      Journal of crystal growth
    61. YANG Z; SOU IK; YEUNG YH; WONG GKL; WANG J; JIN CX; HOU XY
      INTERFACE STATES OF ZNSE GAAS INTERFACE

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    62. MANTESE L; ROSSOW U; ASPNES DE
      SURFACE-INDUCED OPTICAL ANISOTROPY OF OXIDIZED, CLEAN, AND HYDROGENATED VICINAL SI(001) SURFACES

      Applied surface science
    63. SUNTOLA T
      SURFACE-CHEMISTRY OF MATERIALS DEPOSITION AT ATOMIC LAYER LEVEL

      Applied surface science
    64. BEAUMONT SP
      III-V NANOELECTRONICS

      Microelectronic engineering
    65. YANG Z; SOU IK; YEUNG YH; WONG GKL
      OPTICAL ANISOTROPY OF THE ZNSE GAAS INTERFACE

      Journal of crystal growth
    66. RO JR; PARK SJ; KIM SB; LEE EH
      GROWTH OF (411)A FACETED GAAS ALGAAS RIDGES BY GROWTH-INTERRUPTED CHEMICAL BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. ITO T; SHIRAISHI K
      A THEORETICAL INVESTIGATION OF MIGRATION POTENTIALS OF GA ADATOMS NEAR STEP EDGES ON GAAS(001)-C(4X4) SURFACE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    68. ITO T; SHIRAISHI K
      A THEORETICAL INVESTIGATION OF MIGRATION POTENTIALS OF GA ADATOMS NEAR KINK AND STEP EDGES ON GAAS(001)-(2X4) SURFACE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    69. DAWERITZ L; KOSTIAL H; HEY R; RAMSTEINER M; WAGNER J; MAIER M; BEHREND J; HORICKE M
      ATOMIC-SCALE CONTROLLED INCORPORATION OF ULTRAHIGH-DENSITY SI DOPING SHEETS IN GAAS

      Journal of crystal growth
    70. ANDROUSSI Y; LEFEBVRE A; DELAMARRE C; WANG LP; DUBON A; COURBOULES B; DEPARIS C; MASSIES J
      PLASTIC STRESS-RELAXATION IN HIGHLY STRAINED IN0.30GA0.70AS GAAS STRUCTURES/

      Applied physics letters
    71. YANG Z; WONG GK; SOU IK; YEUNG YH
      OBSERVATION OF ZNSE GAAS INTERFACE STATES BY REFLECTANCE DIFFERENCE SPECTROSCOPY/

      Applied physics letters
    72. MATUNARI S; KANAI M; KAWAI T
      SUPERCONDUCTIVITY IN ARTIFICIALLY LAYERED (BAAUOX)(BACUO2-FILMS(Y)(CACUO2)2 THIN)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    73. GRUNBERG P; BARANOV A; FOUILLANT C; LAZZARI JL; GRECH P; BOISSIER G; ALIBERT C; JOULLIE A
      HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 DOUBLE-HETEROSTRUCTURE LASER GROWN BY LIQUID-PHASE EPITAXY/

      Electronics Letters
    74. SHIMOMURA H; ANAN T; MORI K; SUGOU S
      HIGH-REFLECTANCE ALPSB GAPSB DISTRIBUTED-BRAGG-REFLECTOR MIRRORS ON INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

      Electronics Letters
    75. LI XM; KAWAI T; KAWAI S
      SUPERCONDUCTIVITY IN ARTIFICIALLY LAYERED BA-CA-CU-O THIN-FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    76. DREVILLON B
      PHASE-MODULATED ELLIPSOMETRY FROM THE ULTRAVIOLET TO THE INFRARED - IN-SITU APPLICATION TO THE GROWTH OF SEMICONDUCTORS

      Progress in crystal growth and characterization of materials
    77. ROOS KR; TRINGIDES MC
      FLUX DEPENDENCE OF THE AG SI(111) GROWTH

      Europhysics letters
    78. ARMSTRONG SR; HOARE RD; POVEY IM; PEMBLE ME; STAFFORD A; TAYLOR AG; KLUG DR
      REFLECTANCE ANISOTROPY FROM (001) GAAS-SURFACES DURING PSEUDO-ALE GROWTH OF GAAS

      Applied surface science
    79. LASTRASMARTINEZ LF; LASTRASMARTINEZ A; BALDERASNAVARRO RE
      A SPECTROMETER FOR THE MEASUREMENT OF REFLECTANCE-DIFFERENCE SPECTRA

      Review of scientific instruments
    80. KAPRE RM; TSANG WT; CHEN YK; SERGENT AM
      MULTIWAVELENGTH LASER ARRAY BY CHEMICAL BEAM EPITAXY ON PATTERNED INPSUBSTRATES

      Electronics Letters
    81. STOLTZ B; DASLER M; SAHLEN O
      LOW THRESHOLD-CURRENT, WIDE TUNING-RANGE, BUTT-JOINT DBR LASER GROWN WITH 4 MOVPE STEPS

      Electronics Letters
    82. KIM HS; HAFICH MJ; PATRIZI GA; NANDA A; VOGT TJ; WOODS LM; ROBINSON GY
      HOLE TRAPS IN BE-DOPED MBE INGAP

      Electronics Letters
    83. GARCIA JC; MAUREL P; HIRTZ JP
      HIGH-QUALITY 0.98-MU-M GAINAS GAAS/GAINP LASERS GROWN BY CBE USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE/

      Electronics Letters
    84. RAO TS; LACELLE C; ROTH AP
      3.1X10(5)CM(2) V(S) PEAK ELECTRON MOBILITIES IN INP GROWN BY CHEMICALBEAM EPITAXY/

      Electronics Letters
    85. GRUHLE A; KIBBEL H; ERBEN U; KASPER E
      91 GHZ SIGE HBTS GROWN BY MBE

      Electronics Letters
    86. DEBOECK J; SANDS T; HARBISON JP; SCHERER A; GILCHRIST H; CHEEKS TL; TANAKA M; KERAMIDAS VG
      NONVOLATILE MEMORY CHARACTERISTICS OF SUBMICROMETER HALL STRUCTURES FABRICATED IN EPITAXIAL FERROMAGNETIC MNAL FILMS ON GAAS

      Electronics Letters
    87. NOMURA Y; MORISHITA Y; GOTO S; KATAYAMA Y
      FABRICATION OF GAAS QUANTUM-WIRE STRUCTURE USING METAL-ORGANIC MOLECULAR-BEAM EPITAXY

      Electronics Letters
    88. LUI M; MCFARLANE RA; YAP D; LEDERMAN D
      UP-CONVERSION LUMINESCENCE OF ER-DOPED ZNF2 CHANNEL WAVE-GUIDES GROWNBY MBE

      Electronics Letters
    89. ZERGUINE D; LAUNAY P; ALEXANDRE F; BENCHIMOL JL; ETRILLARD J
      HIGH-FREQUENCY QUASIPLANAR GAINP GAAS HBT WITH CBE SELECTIVE COLLECTOR CONTACT REGROWTH/

      Electronics Letters
    90. TOURNIE E; GRUNBERG P; FOUILLANT C; KADRET S; BOISSIER G; BARANOV A; JOULLIE A; GAUMONTGOARIN E; PLOOG KH
      LONG-WAVELENGTH STRAINED-LAYER INAS GAINAS SINGLE-QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATE/

      Electronics Letters
    91. DOTOR ML; HUERTAS P; POSTIGO PA; GOLMAYO D; BRIONES F
      P-TYPE INP GROWN AT LOW-TEMPERATURES BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE)

      Electronics Letters
    92. MCELHINNEY M; STANLEY CR
      REDUCED INDIUM INCORPORATION DURING THE MBE GROWTH OF IN(AL,GA)AS

      Electronics Letters
    93. SATO K; KOTAKA I; WAKITA K; KONDO Y; YAMAMOTO M
      STRAINED-INGAASP MQW ELECTROABSORPTION MODULATOR INTEGRATED DFB LASER

      Electronics Letters
    94. NICHOLS D; DUTTA NK; BERGER PR; SMITH PR; SIVCO D; CHO AY
      MONOLITHIC GAAS ALGAAS PIN MESFET PHOTORECEIVER USING A SINGLE MOLECULAR-BEAM EPITAXY GROWTH STEP/

      Electronics Letters
    95. DANGLA J; BENCHIMOL JL; ALEXANDRE F; SIK H; DUBONCHEVALLIER C
      STABILITY OF HIGHLY BE-DOPED GAAS GAINP HBTS GROWN BY CHEMICAL BEAM EPITAXY/

      Electronics Letters


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Documento generato il 22/10/20 alle ore 04:56:45